A high-sensitivity fast-response hydrogen sensor based on palladium single-atom doping and a preparation method and application thereof

Abstract

This invention relates to the field of trace gas leak detection, specifically to a highly sensitive and fast-response hydrogen sensor based on palladium single-atom doping, its preparation method, and its application. The method includes the following steps: preparing indium hydroxide material using indium ions, anhydrous ethanol, ammonia, and deionized water; then doping palladium ions into the indium hydroxide solution to obtain a palladium ion-doped indium hydroxide solution; reducing the solution with sodium borohydride; centrifuging to obtain palladium cluster-doped indium hydroxide material; subsequently calcining the palladium cluster-doped indium hydroxide composite material at high temperature to obtain a palladium single-atom-doped indium oxide composite material; and finally transferring the palladium single-atom-doped indium oxide onto an electrode substrate surface to obtain the hydrogen sensor. This invention, through improvements to key processes, effectively solves the problems of poor selectivity in pure indium oxide gas sensors and slow response speed in palladium nanoparticle-doped hydrogen sensors, achieving rapid and highly sensitive trace detection of hydrogen.

Description

Technical Field

[0001] This invention relates to the field of trace gas leak detection, specifically to a highly sensitive and fast-response hydrogen sensor based on palladium single-atom doping, its preparation method, and its application. Background Technology

[0002] Hydrogen, as a clean and efficient energy carrier, shows broad application prospects in fuel cell vehicles, distributed power generation, and industrial decarbonization. However, hydrogen is colorless, odorless, flammable, and explosive, with an explosive concentration range of 4%-75% and an ignition energy as low as 0.02 mJ. Even trace leaks throughout the entire production, storage, transportation, and use chain can cause serious safety accidents. Metal oxide semiconductor (MOS) gas sensors, represented by indium oxide and tin oxide, have attracted much attention due to their low cost, fast response, and ease of integration. However, in the detection of trace hydrogen, these types of sensors... The sensor still faces bottlenecks: pure indium oxide typically requires temperatures above 200°C to obtain a significant signal in response to hydrogen, and high-temperature operation not only increases power consumption but also poses potential safety hazards; the adsorption-dissociation-reaction process of hydrogen molecules on the surface of pure indium oxide requires overcoming high activation energy, resulting in long response times (typically >30s) and recovery times (typically >60s), making it difficult to meet the rapid monitoring requirements for trace hydrogen leaks; pure semiconductor surfaces lack selectivity for reducing gases and are easily interfered with by coexisting gases such as ethanol, methane, and carbon monoxide, making it difficult to achieve highly selective detection of trace hydrogen.

[0003] To address the aforementioned issues, researchers have extensively explored noble metal particle modification strategies. Introducing noble metals such as palladium into indium oxide substrates in nanoparticle form can leverage their catalytic activity to promote hydrogen adsorption and accelerate the sensing reaction through the hydrogen spillover effect. However, traditional palladium nanoparticle modification strategies have inherent limitations: the hydrogen spillover effect occurs only in a few palladium atoms on the particle surface, while a large number of palladium atoms located inside the particles cannot contact hydrogen molecules and are unlikely to participate in the catalytic spillover reaction. Although the introduction of noble metal particles effectively promotes the hydrogen adsorption process, their strong adsorption of hydrogen atoms restricts the spillover efficiency, resulting in limited sensitivity and response speed. Nanoparticles are prone to agglomeration and sintering under high-temperature operating conditions, leading to the decay of active sites and affecting the long-term stability of the sensor. In view of this, we propose a highly sensitive and fast-response hydrogen sensor based on palladium single-atom doping, along with its fabrication method and applications. Summary of the Invention

[0004] This invention provides a highly sensitive and fast-response hydrogen sensor based on palladium single-atom doping, its preparation method, and its application. The aim is to dope palladium metal in indium oxide in single-atom form using a solution precipitation method combined with high-temperature annealing, obtaining a palladium single-atom doped indium oxide composite material. This preparation method anchors the noble metal to the carrier surface in the form of isolated atoms, exposing each atom to the reaction interface, improving atom utilization. Furthermore, the atomically dispersed active sites facilitate hydrogen adsorption, dissociation, and overflow, thereby shortening the hydrogen response time, increasing the hydrogen detection limit, and achieving rapid response and highly sensitive detection of trace hydrogen.

[0005] To achieve the above objectives, in a first aspect, the present invention provides a method for fabricating a highly sensitive, fast-response hydrogen sensor based on palladium single-atom doping, comprising the following steps: S1.1 Mix ammonia water and anhydrous ethanol, add to an anhydrous ethanol / deionized water mixed solution containing indium ions, place in a sealed container, stir and heat at a certain temperature for 0.5-5.0h, then perform solid-liquid separation, then wash with deionized water and ethanol respectively, centrifuge again, repeat 3-10 times, and after drying, obtain indium hydroxide; S1.2 Disperse indium hydroxide in deionized water, add ammonia to adjust the pH of the solution, add palladium source, stir at room temperature for 2-24 hours, then centrifuge, wash and dry to obtain palladium ion-doped indium hydroxide; S1.3. Disperse palladium ion-doped indium hydroxide in deionized water, add a 0.1 mol / L sodium borohydride solution, stir at room temperature for 2-48 h, then centrifuge, wash and dry to obtain palladium cluster-doped indium hydroxide. S1.4 Anneal the palladium cluster-doped indium hydroxide to obtain palladium single-atom-doped indium oxide material; S1.5. Disperse palladium single-atom doped indium oxide material in an organic solvent, stir until homogeneous, and then spin-coat it onto the surface of an electrode substrate to obtain a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping.

[0006] Preferably, in step S1.1, the mass ratio of ammonia to anhydrous ethanol is 1:2-10; The mass ratio of anhydrous ethanol to deionized water is 1-10:1; Indium ions in the solution are provided by indium chloride, indium nitrate, or indium sulfate; when the indium ions are derived from indium nitrate, the mass ratio of ammonia to indium nitrate is 50-100:1.

[0007] Preferably, in step S1.1, the stirring and heating temperature is 25-90℃.

[0008] Preferably, in step S1.2, ammonia is added dropwise to adjust the pH of the solution to 7-13.

[0009] Preferably, in step S1.2, the palladium source is any one of palladium nitrate, palladium tetraamminechloride, and palladium tetraamminenitrate, and the mass ratio of palladium to indium hydroxide is 0.001-0.020:1.

[0010] Preferably, in step S1.3, the amount of sodium borohydride added is 0.5-5.0 times the mass of the palladium source.

[0011] Preferably, in step S1.4, the annealing atmosphere is any one of nitrogen, air, or a mixture of nitrogen and air; the volume ratio of nitrogen to air in the mixture of nitrogen and air is 9:1.

[0012] The annealing temperature is 200-800℃, the heating rate is 2-10℃ / min, and the annealing time is 0.5-10h.

[0013] Preferably, in step S1.5, the organic solvent is any one of ethanol, isopropanol, or a mixture of ethanol and isopropanol; the volume ratio of ethanol to isopropanol in the mixture of ethanol and isopropanol is 1:1.

[0014] Secondly, the present invention provides a highly sensitive and fast-response hydrogen sensor based on palladium single-atom doping, which is prepared according to the above-described method for preparing a highly sensitive and fast-response hydrogen sensor based on palladium single-atom doping.

[0015] Thirdly, the present invention provides an application of a highly sensitive and fast-response hydrogen sensor based on palladium single-atom doping, using the following technical solution: the application of the aforementioned highly sensitive and fast-response hydrogen sensor based on palladium single-atom doping in trace gas leak detection.

[0016] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. This invention discloses a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping, its preparation method, and its application. Palladium ions are introduced into the indium hydroxide precursor stage via solution precipitation combined with high-temperature annealing. The abundant hydroxyl sites on the carrier surface anchor the palladium ions. After reduction and high-temperature calcination, palladium is highly dispersed in indium oxide in single-atom form, achieving atomic-level doping of palladium. This ensures that each palladium atom is exposed to the gas reaction interface, solving the problem of atomic waste within nanoparticles and improving atomic utilization.

[0017] 2. The present invention relates to a highly sensitive and fast-response hydrogen sensor based on palladium single-atom doping, its preparation method and application. The palladium single-atom doped hydrogen sensor prepared in this invention promotes hydrogen adsorption, and the atomically dispersed palladium single atoms are more conducive to catalyzing the dissociation of hydrogen molecules, increasing the number of surface-active hydrogen atoms, and further promoting hydrogen overflow, thereby shortening the sensor's response time to trace amounts of hydrogen to 3s and the recovery time to 20s.

[0018] 3. The present invention discloses a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping, its preparation method and application. Using conventional chemical reagents and equipment, palladium single atoms can be controlled to dope in indium oxide through steps such as hydrothermal reaction, ion adsorption, chemical reduction and high-temperature calcination. The process is simple, easy to operate, and has good batch repeatability, making it suitable for large-scale production. Attached Figure Description

[0019] Figure 1 The graph shows the response values ​​of a palladium single-atom doped hydrogen sensor to different gases. Figure 2 A comparison of the response recovery time of a palladium single-atom doped hydrogen sensor and a palladium nanoparticle doped sensor to 50 ppm hydrogen. Figure 3 The lower limit of hydrogen detection for a palladium single-atom doped indium oxide sensor is shown in the graph. Figure 4 A process flow diagram of the fabrication method of a palladium single-atom doped high-sensitivity fast-response hydrogen sensor. Detailed Implementation

[0020] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0021] Ammonia water (CAS No.: 1336-21-6) was purchased from Shenyang Ketuo Chemical Co., Ltd.

[0022] Indium chloride (CAS No.: 10025-82-8, purity AR, 99%), indium sulfate (CAS No.: 13464-82-9), and tetraamminepalladium chloride (CAS No.: 13933-31-8) were all purchased from Shanghai Yuanye Biotechnology Co., Ltd.

[0023] Indium nitrate (CAS No.: 13770-61-1) was purchased from Jining Maikerui Rare Earth Co., Ltd.

[0024] Palladium nitrate (CAS No.: 10102-05-3) and tetraamminepalladium nitrate (CAS No.: 13601-08-6) were both purchased from Shanghai Aladdin Biochemical Technology Co., Ltd.

[0025] In this embodiment of the invention, the electrode substrate is an interdigitated electrode structure, the electrode material is gold or platinum, and the electrode spacing is 5-50 μm; the sensor performs gas testing at an operating temperature of 100-200 degrees Celsius.

[0026] Example 1: A method for fabricating a highly sensitive, fast-response hydrogen sensor based on palladium single-atom doping, comprising the following steps: S1.1 Mix 60 mL of ammonia water and 20 mL of anhydrous ethanol evenly, and slowly add the mixture to a solution containing 2 g of indium nitrate solid in 60 mL of anhydrous ethanol and 20 mL of deionized water. Place the mixture in a sealed container, heat it in a water bath at 80 °C and stir for 0.5 h. Then wash the mixture with deionized water and ethanol respectively, centrifuge it again, repeat the process 5 times, and dry it to obtain indium hydroxide. S1.2 Disperse 200 mg of indium hydroxide into 50 mL of deionized water, add ammonia dropwise to adjust the pH of the solution to 11, then add 1.88 mg of palladium nitrate dropwise. After stirring at room temperature for 24 h, centrifuge, wash and dry to obtain palladium ion-doped indium hydroxide. S1.3. Disperse palladium ion-doped indium hydroxide in deionized water, add 0.05 mL of 0.1 mol / L sodium borohydride solution, stir for 12 h, centrifuge, wash and dry to obtain palladium cluster-doped indium hydroxide; S1.4. Palladium cluster-doped indium hydroxide was annealed in air at a temperature of 600℃, a heating rate of 5℃ / min, and an annealing time of 4h to obtain palladium single-atom-doped indium oxide material; S1.5. Disperse palladium single-atom doped indium oxide material in isopropanol, stir evenly, and then spin-coat it onto the surface of the electrode substrate to obtain a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping.

[0027] Example 2: A method for fabricating a highly sensitive, fast-response hydrogen sensor based on palladium single-atom doping, comprising the following steps: S1.1 Mix 90 mL of ammonia water and 30 mL of anhydrous ethanol evenly, and slowly add the mixture to a solution containing 4 g of indium nitrate solid in 60 mL of anhydrous ethanol and 20 mL of deionized water. Place the mixture in a sealed container, heat it in a water bath at 70 °C and stir for 1 h. Then wash it with deionized water and ethanol respectively, centrifuge it again, repeat the process 5 times, and dry it to obtain indium hydroxide. S1.2 Disperse 200 mg of indium hydroxide in 50 mL of deionized water, add ammonia dropwise to adjust the pH of the solution to 10, and then add 9.4 mg of palladium nitrate dropwise. After stirring at room temperature for 22 h, centrifuge, wash and dry to obtain palladium ion-doped indium hydroxide. S1.3. Disperse palladium ion-doped indium hydroxide in deionized water, add 0.1 mL of 0.1 mol / L sodium borohydride solution, stir for 12 h, centrifuge, wash and dry to obtain palladium cluster-doped indium hydroxide; S1.4. Palladium cluster-doped indium hydroxide was annealed in air at a temperature of 500℃, a heating rate of 8℃ / min, and an annealing time of 5h to obtain palladium single-atom-doped indium oxide material. S1.5. Disperse palladium single-atom doped indium oxide material in isopropanol, stir evenly, and then spin-coat it onto the surface of the electrode substrate to obtain a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping.

[0028] Example 3: A method for fabricating a highly sensitive, fast-response hydrogen sensor based on palladium single-atom doping, comprising the following steps: S1.1 Mix 60 mL of ammonia water and 20 mL of anhydrous ethanol evenly, and slowly add the mixture to a solution containing 2 g of indium nitrate solid in 60 mL of anhydrous ethanol and 20 mL of deionized water. Place the mixture in a sealed container, heat it in a water bath at 80 °C and stir for 0.5 h. Then wash the mixture with deionized water and ethanol respectively, centrifuge it again, repeat the process 5 times, and dry it to obtain indium hydroxide. S1.2 Disperse 200 mg of indium hydroxide into 50 mL of deionized water, add ammonia dropwise to adjust the pH of the solution to 9, then add 0.56 mg of palladium tetraamminenitrate dropwise. After stirring at room temperature for 20 h, centrifuge, wash and dry to obtain palladium ion-doped indium hydroxide. S1.3. Disperse palladium ion-doped indium hydroxide in deionized water, add 0.05 mL of 0.1 mol / L sodium borohydride solution, stir for 10 h, centrifuge, wash and dry to obtain palladium cluster-doped indium hydroxide. S1.4. Palladium cluster-doped indium hydroxide was annealed in a nitrogen atmosphere at a temperature of 550℃, a heating rate of 5℃ / min, and an annealing time of 5h to obtain palladium single-atom-doped indium oxide material. S1.5. Disperse palladium single-atom doped indium oxide material in ethanol, stir evenly, and then spin-coat it onto the surface of the electrode substrate to obtain a high-sensitivity and fast-response hydrogen sensor based on palladium single-atom doping.

[0029] Example 4: A method for fabricating a highly sensitive, fast-response hydrogen sensor based on palladium single-atom doping, comprising the following steps: S1.1 Mix 60 mL of ammonia water and 20 mL of anhydrous ethanol evenly, and slowly add the mixture to a solution containing 4 g of indium chloride solid in 60 mL of anhydrous ethanol and 20 mL of deionized water. Place the mixture in a sealed container, heat it in a water bath at 80 °C and stir for 0.5 h. Then perform solid-liquid separation and washing, centrifuge again, repeat 5 times, and dry to obtain indium hydroxide. S1.2 Disperse 200 mg of indium hydroxide into 50 mL of deionized water, add ammonia dropwise to adjust the pH of the solution to 12, then add 5.6 mg of tetraamminepalladium nitrate dropwise. After stirring at room temperature for 18 h, centrifuge, wash and dry to obtain palladium ion-doped indium hydroxide. S1.3. Disperse palladium ion-doped indium hydroxide in deionized water, add 0.1 mL of 0.1 mol / L sodium borohydride solution, stir for 14 h, centrifuge, wash and dry to obtain palladium cluster-doped indium hydroxide. S1.4. Palladium cluster-doped indium hydroxide was annealed in a nitrogen atmosphere at a temperature of 350℃, a heating rate of 8℃ / min, and an annealing time of 6h to obtain palladium single-atom-doped indium oxide material. S1.5. Disperse palladium single-atom doped indium oxide material in ethanol, stir evenly, and then spin-coat it onto the surface of the electrode substrate to obtain a high-sensitivity and fast-response hydrogen sensor based on palladium single-atom doping.

[0030] Example 5: A method for fabricating a highly sensitive, fast-response hydrogen sensor based on palladium single-atom doping, comprising the following steps: S1.1 Mix 90 mL of ammonia water and 30 mL of anhydrous ethanol evenly, and slowly add it to a mixed solution of 60 mL of anhydrous ethanol and 20 mL of deionized water containing 2 g of indium nitrate solid. Place the mixture in a sealed container, heat it in a water bath at 80 °C and stir for 1 h. Then perform solid-liquid separation and washing, centrifuge again, repeat 5 times, and dry it to obtain indium hydroxide. S1.2. Disperse 200 mg of indium hydroxide in 50 mL of deionized water, add ammonia dropwise to adjust the pH of the solution to 11, then add 4.6 mg of tetraamminepalladium chloride dropwise. After stirring at room temperature for 18 h, centrifuge, wash and dry to obtain palladium ion-doped indium hydroxide; S1.3. Disperse palladium ion-doped indium hydroxide in deionized water, add 0.05 mL of 0.1 mol / L sodium borohydride solution, stir for 14 h, centrifuge, wash and dry to obtain palladium cluster-doped indium hydroxide. S1.4. Palladium cluster-doped indium hydroxide was annealed in a nitrogen atmosphere at a temperature of 500℃, a heating rate of 5℃ / min, and an annealing time of 5h to obtain palladium single-atom-doped indium oxide material. S1.5. Disperse the palladium single-atom doped indium oxide material in a mixed solvent of ethanol and isopropanol, stir evenly, and then spin-coat it onto the surface of the electrode substrate to obtain a high-sensitivity and fast-response hydrogen sensor based on palladium single-atom doping.

[0031] Example 6: A method for fabricating a highly sensitive, fast-response hydrogen sensor based on palladium single-atom doping, comprising the following steps: S1.1 Mix 60 mL of ammonia water and 20 mL of anhydrous ethanol evenly, and slowly add the mixture to a solution containing 4 g of indium chloride solid in 60 mL of anhydrous ethanol and 20 mL of deionized water. Place the mixture in a sealed container, heat it in a water bath at 75 °C and stir for 0.5 h. Then perform solid-liquid separation and washing, centrifuge again, repeat 5 times, and dry to obtain indium hydroxide. S1.2 Disperse 200 mg of indium hydroxide in 50 mL of deionized water, add ammonia dropwise to adjust the pH of the solution to 9, then add 2.3 mg of tetraamminepalladium chloride dropwise. After stirring at room temperature for 24 h, centrifuge, wash and dry to obtain palladium ion-doped indium hydroxide. S1.3. Disperse palladium ion-doped indium hydroxide in deionized water, add 0.1 mL of 0.1 mol / L sodium borohydride solution, stir for 10 h, centrifuge, wash and dry to obtain palladium cluster-doped indium hydroxide; S1.4. Palladium cluster-doped indium hydroxide was subjected to air annealing at a temperature of 600℃, a heating rate of 6℃ / min, and an annealing time of 4h to obtain palladium single-atom-doped indium oxide material. S1.5. Disperse the palladium single-atom doped indium oxide material in a mixed solvent of ethanol and isopropanol, stir evenly, and then spin-coat it onto the surface of the electrode substrate to obtain a high-sensitivity and fast-response hydrogen sensor based on palladium single-atom doping.

[0032] Comparative Example 1: The difference between this comparative example and Example 1 is that a palladium nanoparticle-doped indium oxide sensor is used.

[0033] A highly sensitive and fast-response hydrogen sensor based on palladium-doped indium oxide composite material was prepared. Its resistance was altered by reacting with various gases, and the sensor's response was defined as a ratio (…). / ),in The sensor resistance value in the air. The sensor resistance value in the target gas; simultaneously, the sensor response time ( ) and recovery time ( The time elapsed for the sensor resistance to reach 90% of the total resistance change under both adsorption and desorption conditions was determined.

[0034] The selectivity of palladium single-atom doped sensors for hydrogen is as follows: Figure 1 As shown.

[0035] Figure 1 The results show that the palladium single-atom doped indium oxide composite material exhibits a very high gas response value to hydrogen, which is much higher than the response values ​​to other gases such as sulfur dioxide and hydrogen sulfide, proving that the sensor has high selectivity for hydrogen.

[0036] The response recovery time of the palladium single-atom doped hydrogen sensor and the palladium nanoparticle doped sensor (Comparative Example 1) to 50 ppm hydrogen is compared as shown in the figure. Figure 2 As shown.

[0037] Figure 2 It can be seen that the palladium single-atom doped indium oxide sensor responds rapidly to hydrogen gas, with a response time of only 3s and a recovery time of 20s, which is significantly better than the palladium nanoparticle doped indium oxide sensor with a response time of 9s and a recovery time of 54s. This indicates that the palladium single-atom doped indium oxide sensor has a fast and highly sensitive response to hydrogen gas.

[0038] The detection limit of a single-atom doped indium oxide sensor for hydrogen is as follows: Figure 3 As shown, the palladium single-atom doped indium oxide sensor has a detection limit of 0.1 ppm for hydrogen, reaching the level of trace detection, which can effectively meet the early warning requirements for hydrogen leaks.

[0039] In summary, the embodiments of the present invention not only yield palladium single-atom doped indium oxide composite material, but also enable it to serve as the sensing layer of a resistive metal oxide gas sensor, achieving rapid and highly sensitive trace detection of hydrogen gas. Moreover, it eliminates the need for expensive detection equipment, has low detection costs, and is simple, fast, and efficient to operate.

[0040] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely preferred examples and are not intended to limit the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for fabricating a highly sensitive, fast-response hydrogen sensor based on palladium single-atom doping, characterized in that, Includes the following steps: S1.1 Mix ammonia water and anhydrous ethanol, add to an anhydrous ethanol / deionized water mixed solution containing indium ions, place in a sealed container, stir and heat at a certain temperature for 0.5-5.0h, then perform solid-liquid separation, then wash with deionized water and ethanol respectively, centrifuge again, repeat 3-10 times, and after drying, obtain indium hydroxide; S1.2 Disperse indium hydroxide in deionized water, add ammonia to adjust the pH of the solution, add palladium source, stir at room temperature for 2-24 hours, then centrifuge, wash and dry to obtain palladium ion-doped indium hydroxide; S1.

3. Disperse palladium ion-doped indium hydroxide in deionized water, add a 0.1 mol / L sodium borohydride solution, stir at room temperature for 2-48 h, then centrifuge, wash and dry to obtain palladium cluster-doped indium hydroxide. S1.4 Anneal the palladium cluster-doped indium hydroxide to obtain palladium single-atom-doped indium oxide material; S1.

5. Disperse palladium single-atom doped indium oxide material in an organic solvent, stir until homogeneous, and then spin-coat it onto the surface of an electrode substrate to obtain a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping.

2. The method for fabricating a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping according to claim 1, characterized in that, In step S1.1, the mass ratio of ammonia to anhydrous ethanol is 1:2-10; The mass ratio of anhydrous ethanol to deionized water is 1-10:1; Indium ions in the solution are provided by indium chloride, indium nitrate, or indium sulfate; when the indium ions are derived from indium nitrate, the mass ratio of ammonia to indium nitrate is 50-100:

1.

3. The method for fabricating a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping according to claim 1, characterized in that, In step S1.1, the stirring and heating temperature is 25-90℃.

4. The method for fabricating a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping according to claim 1, characterized in that, In step S1.2, ammonia water is added dropwise to adjust the pH of the solution to 7-13.

5. The method for fabricating a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping according to claim 1, characterized in that, In step S1.2, the palladium source is any one of palladium nitrate, palladium tetraamminechloride, and palladium tetraamminenitrate, and the mass ratio of palladium to indium hydroxide is 0.001-0.020:

1.

6. The method for fabricating a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping according to claim 1, characterized in that, In step S1.3, the amount of sodium borohydride added is 0.5-5.0 times the mass of the palladium source.

7. The method for fabricating a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping according to claim 1, characterized in that, In S1.4, the annealing atmosphere is any one of nitrogen, air, or a mixture of nitrogen and air. The annealing temperature is 200-800℃, the heating rate is 2-10℃ / min, and the annealing time is 0.5-10h.

8. The method for fabricating a high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping according to claim 1, characterized in that, In S1.5, the organic solvent is any one of ethanol, isopropanol, or a mixture of ethanol and isopropanol.

9. A highly sensitive, fast-response hydrogen sensor based on palladium single-atom doping, characterized in that, The high-sensitivity, fast-response hydrogen sensor based on palladium single-atom doping was prepared according to any one of claims 1-8.

10. The application of a highly sensitive, fast-response hydrogen sensor based on palladium single-atom doping as described in any one of claims 1-9 in the detection of trace gas leaks.

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