Optical waveguide modulation device and optical phase modulator
By setting metal electrodes on the isolation layer to cover the edge of the first flat plate layer, the problem of electric field leakage in the ridge waveguide structure is solved, and the modulation efficiency of the optical waveguide modulation device and the performance of the optical phase modulator are improved.
Patent Information
- Application Number
- CN202412000463.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2026-07-10
AI Technical Summary
In common ridge waveguide structures, metal electrodes are placed on the first flat plate layer of the ridge waveguide structure, which leads to electric field leakage and reduces the modulation efficiency of the electric field on the waveguide refractive index.
Metal electrodes are placed on the isolation layer, covering both sides of the first flat plate layer to form a stepped portion to limit electric field leakage and improve electric field concentration.
It reduces electric field leakage, improves the modulation efficiency of optical waveguide modulation devices, and enhances the performance of optical phase modulators.
Smart Images
Figure CN122362704A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of optical communication technology, and in particular to an optical waveguide modulation device and an optical phase modulator. Background Technology
[0002] In the field of optical communication technology, waveguides are indispensable for communication and computing applications because they are unaffected by electromagnetic interference, induced crosstalk, and back diffraction.
[0003] Compared to conventional rectangular waveguides, ridge waveguide structures feature strip-shaped ridges protruding from the first planar layer. Due to their low transmission loss characteristics, ridge waveguide structures are widely used in optical communication technology, especially in optical phase modulators.
[0004] However, common ridge waveguide structures typically place metal electrodes on the first slab layer of the ridge waveguide structure, which often leads to electric field leakage at the two edges of the first slab layer, potentially reducing the modulation efficiency of the electric field on the waveguide refractive index. Summary of the Invention
[0005] In view of the above problems, this disclosure provides an optical waveguide modulation device and an optical phase modulator to reduce electric field leakage on both sides of the first flat plate layer of the ridge waveguide structure, so that the electric field entering the ridge waveguide structure is more concentrated, thereby improving the modulation efficiency of the optical waveguide modulation device.
[0006] According to a first aspect of this disclosure, an optical waveguide modulation apparatus is provided, comprising: a substrate; an isolation layer disposed on the substrate; and a ridge waveguide structure disposed on the side of the isolation layer away from the substrate, including: a first flat plate layer disposed on the side of the isolation layer away from the substrate; a ridge protrusion layer disposed on the side of the first flat plate layer away from the isolation layer; and a first metal layer disposed on the side of the isolation layer away from the substrate and located on both sides of the ridge waveguide structure, wherein the first metal layer extends toward the ridge waveguide structure toward the side of the first flat plate layer away from the isolation layer to cover the two side edges of the first flat plate layer.
[0007] In common ridge waveguide structures, metal electrodes are typically placed on the first flat layer of the ridge waveguide structure. However, in the technical solution of this disclosure, the first metal layer is not placed on the first flat layer of the ridge waveguide structure, but rather on an isolation layer, and the first metal layer covers the two side edges of the first flat layer to enclose the sides of the first flat layer. This design allows the electric field at the two side edges of the first flat layer to be confined within the ridge waveguide structure through the first metal layer, thereby reducing electric field leakage to the two side edges of the first flat layer and making the electric field entering the ridge waveguide structure more concentrated, thus reducing transmission loss caused by battery leakage and improving the modulation efficiency of the optical waveguide modulation device. In some embodiments, the first metal layer forms a first step at the two side edges of the first flat layer, and the first step covers the two side edges of the first flat layer. It can be figuratively understood that the first metal layer "climbs" up the first flat layer from both sides to form the first step. Through this design, the two side edges of the first flat layer are completely covered: a portion of the top surface of the first flat layer and the entirety of the two side surfaces are covered by the first metal layer through the first step. Here, "bottom surface" refers to the surface of the first flat plate layer facing the isolation layer, and "top surface" refers to the surface of the first flat plate layer facing away from the isolation layer.
[0008] In some embodiments, the first metal layer is formed symmetrically about the central axis of the ridge waveguide structure. The first metal layer may be a pre-formed pair of symmetrical metal electrodes, fixed to the ridge waveguide structure by any of the following methods: hot pressing, bonding, adhesion, and mechanical fixation. The first metal layer may also be deposited onto the ridge waveguide structure by any of the following methods: ion beam deposition, photolithography, spraying, printing, imprinting, transfer printing, electroplating, and evaporation. Other manufacturing processes may also be used to form the first metal layer as needed.
[0009] In some embodiments, the optical waveguide modulation device further includes a first cover layer disposed on the side of the first planar layer opposite to the isolation layer and completely covering the ridge layer. Optionally, the first cover layer is a pre-formed component configured in a U-shape. Such a first cover layer can protect the ridge layer from mechanical damage such as wear and scratches, and can also reduce the impact on the optical performance of the waveguide.
[0010] In some embodiments, the first capping layer covers a portion of the first planar layer, and the first metal layer covers all or part of the remaining portion of the first planar layer not covered by the first capping layer. It should be understood that the portion of the first planar layer covered by the first capping layer is the portion of the first planar layer near the central axis of the ridge waveguide, and the portion of the first planar layer covered by the first metal layer is the two side edges of the first planar layer away from the central axis of the ridge waveguide.
[0011] In some embodiments, the first metal layer continues toward the first cover layer to the side of the first cover layer opposite to the first flat layer, to cover both sides of the first cover layer. A portion of the top surface of the first cover layer and the entirety of the two sides are covered by the first metal layer. "Top surface" refers to the surface of the first cover layer opposite to the first flat layer. With this design, the ridge waveguide structure is almost entirely surrounded by the first metal layer in the direction away from the isolation layer, thereby better confining the electric field within the ridge waveguide structure, minimizing electric field leakage, and improving the modulation efficiency of the optical waveguide modulation device.
[0012] In some embodiments, the first metal layer forms second stepped portions at both sides of the first cover layer, and the second stepped portions cover both sides of the first cover layer. Figuratively, the first metal layer "climbs" up the first flat plate layer from both sides to form the first stepped portions, and further "climbs" up the first cover layer from both sides to form the second stepped portions.
[0013] In some embodiments, the optical waveguide modulation device further includes: a second metal layer disposed on the side of the isolation layer away from the substrate, and the second metal layer partially or completely covers the first metal layer at both sides of the first metal layer, wherein the thickness of the second metal layer is greater than the thickness of the first metal layer. Increasing the thickness of the first metal layer can enhance the confinement effect on the waveguide field, but correspondingly, as the thickness of the first metal layer increases, the manufacturing process for forming the first step portion and / or the second step portion becomes more complex. In this regard, the present disclosure provides the following technical solution: (1) forming a first metal layer by the manufacturing process in the above embodiments, the first metal layer having a first step portion and / or a second step portion; (2) providing a second metal layer, and the second metal layer partially or completely covers the first metal layer at both sides of the first metal layer, wherein the thickness of the second metal layer is greater than the thickness of the first metal layer. In this technical solution, the first metal layer can be formed according to a processing technology that facilitates the formation of the first step portion and / or the second step portion, and then a second metal layer with a greater thickness can be provided, thereby reducing the transmission loss of the radio frequency electrode through the first and second metal layers.
[0014] In some embodiments, the optical waveguide modulation device further includes a second plate layer disposed on the side of the isolation layer away from the substrate. The second plate layer is located on both sides of the first plate layer and is spaced apart from the first plate layer, wherein the first metal layer covers a portion of the second plate layer.
[0015] In some embodiments, the optical waveguide modulation device further includes a second cover layer disposed on the side of the second planar layer opposite to the isolation layer, wherein a first metal layer covers a portion of the second cover layer. In some embodiments, the second metal layer is formed symmetrically about the central axis of the ridge waveguide structure.
[0016] In some embodiments, the first metal layer includes a T-shaped electrode, an L-shaped electrode, or a monolithic electrode.
[0017] According to a second aspect of this disclosure, an optical phase modulator is provided, comprising an optical waveguide modulation device according to any of the foregoing technical solutions. Such an optical phase modulator can provide the advantages described above regarding the optical waveguide modulation device, which will not be repeated for the sake of brevity.
[0018] It should be understood that the above description is only an overview of the technical solution of this disclosure. In order to better understand the technical means of this disclosure and to implement it in accordance with the contents of the specification, and in order to make the above and other objects, features and advantages of this disclosure more obvious and understandable, specific embodiments of this disclosure are given below. Attached Figure Description
[0019] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this disclosure. Furthermore, the same reference numerals denote the same parts throughout the drawings. For clarity, the same parts may not be shown in all drawings. In the drawings:
[0020] Figure 1 This is a schematic diagram of the structure of an optical waveguide modulation device according to some embodiments of this disclosure;
[0021] Figure 2 This is a schematic diagram of the structure of an optical waveguide modulation device according to other embodiments of this disclosure;
[0022] Figure 3 This is a schematic diagram of the structure of an optical waveguide modulation device according to other embodiments of this disclosure;
[0023] Figure 4 This is a schematic diagram of the structure of an optical waveguide modulation device according to other embodiments of this disclosure;
[0024] Figure 5 This is a schematic diagram of the structure of an optical waveguide modulation device according to other embodiments of this disclosure.
[0025] The attached icons are numbered as follows:
[0026] Optical waveguide modulation device 10;
[0027] Substrate 20, isolation layer 30;
[0028] Ridge waveguide structure 40, first flat plate layer 41, ridge protrusion layer 42;
[0029] First metal layers 50, 501, 502; first stepped portions 51, 511, 512; second stepped portions 52, 521, 522;
[0030] Second flat plate layer 412;
[0031] First cover layer 60, second cover layer 602; second metal layer 70. Detailed Implementation
[0032] The embodiments of the technical solutions disclosed herein will now be described in detail with reference to the accompanying drawings. These embodiments are merely illustrative of the technical solutions disclosed herein and are therefore intended to limit the scope of protection of this disclosure.
[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this disclosure; the terms “comprising” and “having”, and any variations thereof, in the specification, claims and foregoing description of the drawings of this disclosure are intended to cover non-exclusive inclusion.
[0034] In the description of the embodiments of this disclosure, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary or secondary relationship of the indicated technical features. In the description of the embodiments of this disclosure, "a plurality of" means two or more, unless otherwise explicitly defined.
[0035] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this disclosure. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.
[0036] In the description of the embodiments of this disclosure, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.
[0037] In the description of the embodiments of this disclosure, the term "multiple" refers to two or more (including two), similarly, "multiple groups" refers to two or more (including two groups), and "multiple pieces" refers to two or more (including two pieces).
[0038] In the description of the embodiments of this disclosure, the technical terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this disclosure and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this disclosure.
[0039] In the description of the embodiments of this disclosure, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this disclosure according to the specific circumstances.
[0040] This disclosure relates to an optical waveguide modulation device that reduces electric field leakage across the first planar layer of a ridge waveguide structure, thereby concentrating the electric field entering the ridge waveguide structure and improving the modulation efficiency of the optical waveguide modulation device. The optical waveguide modulation device disclosed herein can be used in optical phase modulators.
[0041] Figure 1 This is a schematic diagram of the structure of an optical waveguide modulation apparatus according to some embodiments of the present disclosure. The optical waveguide modulation apparatus 10 includes: a substrate 20, an isolation layer 30, a ridge waveguide structure 40, and a first metal layer 50. The isolation layer 30 is disposed on the substrate 20. The ridge waveguide structure 40 is disposed on the side of the isolation layer 30 facing away from the substrate 20. The ridge waveguide structure 40 includes a first flat plate layer 41 and a ridge protrusion layer 42. The first flat plate layer 41 is disposed on the side of the isolation layer 30 facing away from the substrate 20, and the ridge protrusion layer 42 is disposed on the side of the first flat plate layer 41 facing away from the isolation layer 30. The first metal layer 50 is disposed on the side of the isolation layer 30 facing away from the substrate 20 and located on both sides of the ridge waveguide structure 40. The first metal layer 50 extends toward the ridge waveguide structure 40 to the side of the first flat plate layer 41 facing away from the isolation layer 30, to cover the two side edges of the first flat plate layer 41.
[0042] In some embodiments, the width of the first flat layer 41 is smaller than the width of the insulating layer 30. By setting the width of the first flat layer 41 to be smaller than the width of the insulating layer 30, the first flat layer 41 does not extend to both ends of the insulating layer 30, but leaves a certain space so that the first metal layer 50 can cover the side edges of the first flat layer 41. In the technical solution of the embodiments of this disclosure, the first flat layer 41 and the first metal layer 50 can be formed in different steps. Optionally, the first flat layer 41 is centered along the central axis of the insulating layer 30 to reserve space for other parts.
[0043] exist Figure 1 In the example shown, the optical waveguide modulation device 10 may further include a first cover layer 60. The first cover layer 60 is disposed on the top surface of the first flat plate layer 41 and completely covers the ridge layer 42. Figure 1 In one embodiment, the first cover layer 60 is a U-shaped preform. In other embodiments of this disclosure, the first cover layer 60 may also be configured in other shapes to fit snugly and completely cover the ridge layer 42. The first cover layer 60 covers a portion of the top surface of the first flat layer 41 on both sides of the ridge layer 42. The first cover layer 60 can be implemented using any one of the following materials: epoxy resin, polyimide, acrylic resin, PDMS (polydimethylsiloxane), silicon oxide, aluminum oxide, silicon nitride, silicon oxynitride, or titanium oxide. In embodiments of this disclosure, the terms "top surface" and "bottom surface" are defined as follows: the surface of the isolation layer 30 facing away from the substrate 20 is defined as the top surface of the isolation layer 30; the surface of the first flat layer 41 facing away from the isolation layer 30 is defined as the top surface of the first flat layer 41, and the surface closer to the isolation layer 30 is defined as the bottom surface of the first flat layer 41; the surface of the first cover layer 60 facing away from the first flat layer 41 is defined as the top surface of the first cover layer 60.
[0044] exist Figure 1 In the illustrated embodiment, substrate 20 is a lithium niobate substrate, a quartz substrate, or a silicon substrate, and may also be implemented using other suitable materials as needed. The isolation layer 30 may be implemented using silicon dioxide or other insulating materials to provide electrical insulation for other components disposed on the isolation layer 30. The ridge waveguide structure 40 may be implemented using lithium niobate (LiNbO3) or lithium tantalate (LiTaO3), or may be implemented using potassium dideuterium phosphate (DKDP), ammonium dihydrogen phosphate (ADP), barium β-borate (BBO), potassium titanium phosphate (KTP), or other electro-optic modulation materials. The ridge waveguide structure 40 has a ridge protrusion layer 42 protruding from the first planar layer 41. The specific shape of the ridge waveguide structure 40 is not limited to... Figure 1The convex symmetrical shape shown can be designed into other shapes according to the modulation requirements of the actual application. For example, at least a portion of the first flat layer 41 may have a shape that increases or decreases in width along its extension direction, or for example, at least a portion of the ridge layer 42 may have a semi-circular cross-section. The first metal layer 51 can be implemented using any one of indium tin oxide (ITO), gold, silver, copper, and aluminum, or other suitable materials may be selected as needed.
[0045] Continue to refer to Figure 1 The first metal layer 50 forms first stepped portions 51 at both sides of the first flat plate layer 41, and the first stepped portions 51 cover both sides of the first flat plate layer 41. This design allows the two sides of the first flat plate layer 41 to be completely surrounded and covered by the first stepped portions 51, thereby confining the electric field at both sides of the ridge waveguide structure 40 to the interior of the ridge waveguide structure 40.
[0046] In some embodiments, the first metal layer 50 may be a pre-formed metal electrode configured to have zigzag or Z-shaped portions that match the shape of the edges of the first flat plate layer, thereby facilitating a close fit to cover both sides of the first flat plate layer and further improving the confinement effect of the metal electrode on the electric field. Figure 1 In the illustrated embodiment, the first step portion 51 is configured in a zigzag shape. It should be understood that the purpose of providing the first step portion 51 is to make the first metal layer 50 fit tightly against the shape of the two side edges of the first flat layer 41. Therefore, the specifications of the first step portion 51 can be changed as needed to match the shape of the edges of different first flat layers 41 accordingly.
[0047] Continue to refer to Figure 1 The first metal layer 50 is formed symmetrically about the central axis of the ridge waveguide structure 40. Figure 1 In the illustrated embodiment, the first metal layer 50 is a pair of symmetrical metal electrodes, and these symmetrical metal electrodes are connected to two terminals of an external power supply (not shown). The first metal layer 50 can be attached to the optical waveguide modulation device 10 by any of the following methods: hot pressing, bonding, bonding, and mechanical fixing. In other embodiments of this disclosure, the first metal layer 50 is attached to the optical waveguide modulation device 10 by any of the following methods: ion beam deposition, photolithography, spraying, printing, imprinting, transfer, electroplating, and evaporation.
[0048] Continue to refer to Figure 1The width of the first flat plate layer 41 is smaller than the width of the isolation layer 30. The ridge waveguide structure 40 and the first metal layer 50 can be formed in different steps. For example, the ridge waveguide structure 40 can be formed on the isolation layer 30 first, and then the first metal layer 50 can be attached to the isolation layer 30 and cover the two side edges of the first flat plate layer 41. Since the first metal layer 50 partially covers the top surface of the isolation layer 30, the width of the first flat plate layer 41 is set to be smaller than the width of the isolation layer 30, so that the first flat plate layer 41 does not extend to both sides of the isolation layer 30, but reserves space for the first metal layer 50 to cover the two side edges of the first flat plate layer 41. Optionally, the first flat plate layer can be centered along the central axis of the isolation layer to reserve space for subsequent installation of other components.
[0049] exist Figure 1 In the example shown, the first capping layer 60 covers a portion of the first planar layer 41, and the first metal layer 50 covers the remaining portion of the first planar layer 41 not covered by the first capping layer 60. It should be understood that the portion of the first planar layer 41 covered by the first capping layer 60 is the portion of the first planar layer 41 closest to the central axis of the ridge waveguide, and the portion of the first planar layer 41 covered by the first metal layer 50 is the portion of the first planar layer 41 located away from the central axis of the ridge waveguide on both sides.
[0050] Figure 2 This is a schematic diagram of the structure of an optical waveguide modulation apparatus according to other embodiments of this disclosure. The first metal layer is formed symmetrically and can be divided into 502 sections about the central axis of the ridge waveguide structure 40.
[0051] exist Figure 2 In the illustrated embodiment, the first portion 501 and the second portion 502 of the first metal layer continue toward the top surface of the first cover layer 60 to cover the two side edges of the first cover layer 60.
[0052] Furthermore, in Figure 2 In the illustrated embodiment, the first metal layers 501 and 502 form second stepped portions 521 and 522 at the side edges of the first cover layer 60, and the second stepped portions 521 and 522 cover the side edges of the first cover layer 60. Figuratively, the first metal layers 501 and 502 "climb" up the first flat plate layer 41 from both sides to form the first stepped portions 511 and 512, and further "climb" up the first cover layer 60 from both sides to form the second stepped portions 521 and 522. Figure 2In the illustrated embodiment, two portions 501 and 502 of the first metal layer are close to each other on the top surface of the first capping layer 60. The two portions 501 and 502 of the first metal layer are respectively connected to two terminals of an external power supply (not shown). For example, the first portion 501 is connected to the positive terminal of the external power supply, and the second portion 501 is connected to the negative terminal. Reverse connections are also possible. The two portions 501 and 502 of the first metal layer, close to each other on the top surface of the first capping layer 60, are non-contact to prevent short circuits. The distance between the first portion 501 and the second portion 502 of the first metal layer on the top surface of the first capping layer 60 is a first spacing. The first spacing can be set to a value close to zero but not equal to zero to maximize the confinement effect of the first metal layer on the electric field of the waveguide.
[0053] exist Figure 2 In the example shown, the first capping layer 60 may cover a portion of the first planar layer 41, and the first metal layer 50 covers all the remaining portion of the first planar layer 41 not covered by the first capping layer 60. When the first metal layer 50 covers all the remaining portion of the first planar layer 41 not covered by the first capping layer 60, the entire bottom surface of the first planar layer 41 of the ridge waveguide structure 40 is covered by the insulating layer 30, the sides of the first planar layer 41 are covered by the first step portion 51, and the top surface of the first planar layer 41 is covered by the first metal layer 50, the first capping layer 60, and the ridge protrusion layer 42, which is covered by the first capping layer 60. In other words, the ridge waveguide structure 40 is completely surrounded and covered to further enhance the aforementioned effect of confining the electric field within the waveguide.
[0054] Figure 3 This is a schematic diagram of the structure of an optical waveguide modulation device according to other embodiments of this disclosure. Figure 3 In the illustrated embodiment, the optical waveguide modulation device 10 further includes a second metal layer 70. The second metal layer 70 is disposed on the top surface of the isolation layer 30, and partially covers the first metal layer 50 at both sides of the first metal layer 50, wherein the thickness of the second metal layer 70 is greater than the thickness of the first metal layer 50. For example, the ratio of the thickness of the second metal layer to the thickness of the first metal layer is greater than 2:1, preferably greater than 5:1.
[0055] In other embodiments of this disclosure, a second metal layer 70 is disposed on the top surface of the isolation layer 30, and the second metal layer 70 partially covers the first metal layer 50. Here, "partially covers" means that, from a top-view perspective, the second metal layer 70 partially covers the first metal layer 50, such that the ridge waveguide structure 40 is covered by a thicker metal structure (i.e., the first metal layer 50 and the second metal layer 70). This design maximizes the confinement of the electric field in the ridge waveguide structure 40.
[0056] exist Figure 3In the illustrated embodiment, the second metal layer 70 is formed symmetrically about the central axis of the ridge waveguide structure 40. This design simplifies the manufacturing process and provides the ridge waveguide structure 40 with confined electric fields on both sides. The second metal layer 70 can be divided into two parts about the central axis of the ridge waveguide structure 40, and the two parts of the second metal layer, along with the parts on the same side of the two parts of the first metal layer, are connected to the same level of an external power supply (not shown). By connecting an external power supply, various desired electric fields can be applied to the ridge waveguide structure 40. (Refer to...) Figures 1 to 3 The first metal layer 50 can be a T-shaped electrode, an L-shaped electrode, or a monolithic electrode. This design allows for better matching of photoelectric transmission speeds.
[0057] Figure 4 This is a schematic diagram of the structure of an optical waveguide modulation device according to other embodiments of this disclosure. Figure 4 In the illustrated embodiment, the optical waveguide modulation device 10 further includes a second planar layer 412, which is disposed on the side of the isolation layer 30 facing away from the substrate 20. The second planar layer 412 is located on both sides of the first planar layer 41 and is spaced apart from the first planar layer 41. In some embodiments, the second planar layer 412 is disposed at the two side edges of the top surface of the isolation layer 30. In some embodiments, the second planar layer 412 is formed symmetrically about the central axis of the ridge waveguide structure 40, and can be divided into two parts about the central axis of the ridge waveguide structure 40. The first metal layer 50 covers not only the two side edges of the first planar layer 41, but also a portion of the second planar layer 412, thereby the top surface of the isolation layer 30 is sequentially covered from both sides to the center by the second planar layer 412, the first metal layer 50, and the first planar layer 41. To put it simply, in the direction toward the ridge waveguide structure 40, the first metal layer 50 "climbs" up the first flat plate layer 41 from both sides of the first flat plate layer 41, while in the direction away from the ridge waveguide structure 40, the first metal layer 50 "climbs" up the second flat plate layer 412 from one side of the second flat plate layer 412.
[0058] For example, Figure 4 The structure in the illustrated embodiment can be formed by the following steps: (1) forming a ridge waveguide structure 40 on the isolation layer 30, and forming a first flat plate layer 41 to completely cover the top surface of the isolation layer 30; (2) partially removing the first flat plate layer 41 on both sides of the central axis of the ridge waveguide structure 40, so that a portion of the top surface of the isolation layer 30 is exposed, and forming a second flat plate layer 412 on the outer side of the exposed area of the first flat plate layer 41; (3) attaching a first metal layer 50 to the exposed area on top of the isolation layer 30, and setting the first metal layer 50 to cover not only the two side edges of the first flat plate layer 41, but also a portion of the second flat plate layer 412.
[0059] Figure 5 This is a schematic diagram of the structure of an optical waveguide modulation device according to other embodiments of this disclosure. Figure 4 Compared to the embodiments shown, in Figure 5 In the illustrated embodiment, the optical waveguide modulation device 10 further includes a second cover layer 602. The second cover layer 602 is disposed on the side of the second flat plate layer 412 opposite to the isolation layer 30, and the first metal layer 50 covers not only the two side edges of the first flat plate layer 41 but also a portion of the second cover layer 602. For example, the isolation layer 30, the first flat plate layer 41, and the first cover layer 60 can be formed in successive processing steps, and then the first cover layer 60 and the first flat plate layer 41 can be partially removed by grinding, etching, laser cutting, or other processes, exposing a portion of the top surface of the isolation layer 30; in subsequent processing steps, the first metal layer 50 is attached to the exposed area on top of the isolation layer 30, and the first metal layer 50 is configured to cover not only the two side edges of the first flat plate layer 41 but also a portion of the second cover layer 602.
[0060] This disclosure also provides an optical phase modulator, including the optical waveguide modulation device 10 of any of the foregoing embodiments. The specific product type of the optical phase modulator is not limited. The optical waveguide modulation device 10 of this disclosure can be used as a core modulation component in the optical phase modulator to achieve phase modulation of optical signals, thereby realizing high-speed, low-loss transmission and high-precision modulation of optical signals, meeting the diverse application needs of optical communication and photonics integration fields.
[0061] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this disclosure, and not to limit them. Although this disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this disclosure, and they should all be covered within the scope of the claims and specification of this disclosure. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. This disclosure is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.
Claims
1. An optical waveguide modulation device, comprising: Substrate; An isolation layer is disposed on the substrate; A ridge waveguide structure, disposed on the side of the isolation layer opposite to the substrate, includes: A first flat plate layer is disposed on the side of the isolation layer opposite to the substrate; and A ridge layer is disposed on the side of the first flat plate layer opposite to the insulating layer; and A first metal layer is disposed on the side of the isolation layer away from the substrate and on both sides of the ridge waveguide structure, wherein the first metal layer extends toward the ridge waveguide structure to the side of the first planar layer away from the isolation layer to cover the two side edges of the first planar layer.
2. The optical waveguide modulation device according to claim 1, wherein, The first metal layer forms a first stepped portion at both sides of the first flat plate layer, and the first stepped portion covers both sides of the first flat plate layer.
3. The optical waveguide modulation device according to claim 1, wherein, The first metal layer is formed symmetrically about the central axis of the ridge waveguide structure.
4. The optical waveguide modulation apparatus according to any one of claims 1 to 3, further comprising: A first cover layer is disposed on the side of the first flat layer opposite to the isolation layer and completely covers the ridge layer.
5. The optical waveguide modulation device according to claim 4, wherein, The first cover layer covers a portion of the first flat plate layer, and the first metal layer covers all or part of the remaining portion of the first flat plate layer that is not covered by the first cover layer.
6. The optical waveguide modulation device according to claim 4, wherein, The first metal layer continues toward the first cover layer to the side of the first cover layer opposite to the first flat layer, so as to cover both sides of the first cover layer.
7. The optical waveguide modulation device according to claim 6, wherein, The first metal layer forms a second stepped portion at both sides of the first cover layer, and the second stepped portion covers both sides of the first cover layer.
8. The optical waveguide modulation apparatus according to any one of claims 1-3, further comprising: A second metal layer is disposed on the side of the isolation layer away from the substrate, and the second metal layer partially or completely covers the first metal layer at both sides of the first metal layer, wherein the thickness of the second metal layer is greater than the thickness of the first metal layer.
9. The optical waveguide modulation device according to claim 8, wherein, The second metal layer is formed symmetrically about the central axis of the ridge waveguide structure.
10. The optical waveguide modulation device according to any one of claims 1-3, further comprising: The second plate layer is disposed on the side of the isolation layer away from the substrate. The second plate layer is located on both sides of the first plate layer and is spaced apart from the first plate layer. The first metal layer covers a portion of the second plate layer.
11. The optical waveguide modulation device according to claim 10, further comprising: A second cover layer is disposed on the side of the second flat plate layer opposite to the isolation layer, wherein the first metal layer covers a portion of the second cover layer.
12. The optical waveguide modulation apparatus according to any one of claims 1-3, wherein, The first metal layer includes a T-shaped electrode, an L-shaped electrode, or a monolithic electrode.
13. An optical phase modulator, comprising: The optical waveguide modulation device according to any one of claims 1 to 12.