A multi-filament ion source and method of operation thereof

Abstract

The application discloses a multi-filament ion source, which comprises an ion source chamber, a cavity structure for ionization arranged in the ion source chamber, a gas supply assembly for uniformly inputting working gas into the ion source chamber, a multi-filament ionization assembly distributed along the length direction of the ion source chamber and used for ionizing the input working gas into plasma, a power supply protection assembly used for supplying power to the multi-filament ionization assembly, a magnet assembly used for forming a magnetic field in the ion source chamber and restraining the distribution of the plasma in the ion source chamber through the magnetic field, and an extraction electrode assembly used for directing the plasma to be extracted from the ion source chamber. The application ensures uniform ionization of the working gas in the chamber through the distributed filament ionization assembly and the uniform gas supply, forms stable distributed plasma, solves the problem of uneven distribution of the plasma, and has the advantages of improving ionization efficiency, equipment operation stability and consistency of ion beam output.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment, and in particular to a multi-filament ion source and its operating method. Background Technology

[0002] Ion sources, as the core devices for plasma generation, have wide applications in semiconductor manufacturing, material surface modification, ion implantation processes, aerospace propulsion systems, and nuclear fusion research. Their core function is to ionize the working gas to form high-density plasma and guide the ion beam through an electric or magnetic field to achieve directional output, meeting the stringent requirements of different scenarios for ion energy, beam uniformity, and process stability. In industrial applications, ion sources that generate rectangular cross-section strip-shaped ion beams play a crucial role in ion implanters and electromagnetic separation devices. The geometric advantages of these strip-shaped ion beams effectively reduce the space charge effect, thereby generating ion beams with higher current intensity and improving production efficiency.

[0003] With the continued growth in demand for the manufacturing of large devices such as photovoltaic panels and next-generation display panels, the need for wider ribbon ion beams is becoming increasingly urgent, and existing ion sources face significant bottlenecks in beam width expansion.

[0004] Traditional ion sources, such as single-filament thermionic emission ion sources and radio frequency ion sources, suffer from multiple technical drawbacks in practical applications. The single-filament design leads to a highly concentrated electron emission region, resulting in severely uneven plasma density distribution within large chambers, and a significant decrease in ionization efficiency with distance from the filament. Gas supply systems typically employ single-point injection, resulting in a pronounced gradient distribution of gas concentration within the chamber, further exacerbating plasma spatial fluctuations and impacting process repeatability and product consistency. The filament, operating in a high-temperature ionization environment, is susceptible to ion sputtering contamination, thermal stress, and oxidation, leading to breakage and a typically short lifespan, resulting in frequent equipment downtime for maintenance. The power supply system lacks a dynamic response mechanism; when a filament failure causes voltage anomalies, it cannot promptly cut off the circuit, potentially damaging the power supply equipment or contaminating the chamber interior. Regarding magnetic field configuration, a single-axial magnetic field is insufficient to effectively confine plasma diffusion, resulting in insufficient ion extraction region density and limited beam intensity. The simplified extraction electrode system design makes the ion beam prone to divergence due to space charge effects, and the lack of protective measures to suppress electron backflow causes plasma disturbances.

[0005] Although multi-filament ion source technology attempts to improve ionization uniformity through distributed filament layout, existing solutions still have significant shortcomings. The gas distribution network design is unreasonable, resulting in severe gas flow attenuation at the end of branch pipes and a significant gas concentration gradient along the chamber length, making uniform gas supply impossible. The magnetic field components are mostly embedded outside the chamber, providing weak confinement and exhibiting poor coordination with the multi-stage electric field of the extraction electrode system, making it difficult to balance beam energy and focusing performance. The lack of a power supply protection mechanism prevents real-time monitoring of filament status and rapid bypassing of abnormal circuits in case of failure, compromising system reliability. These problems collectively restrict plasma uniformity, equipment operational stability, and ion beam output quality, failing to meet the urgent needs of high-end manufacturing and scientific research fields for high-performance ion sources.

[0006] To address the aforementioned issues, existing technologies urgently need improvement. Summary of the Invention

[0007] The purpose of this application is to provide a multi-filament ion source and its working method, which effectively solves the problem of uneven plasma distribution through distributed filament layout and uniform gas supply, thereby improving ionization efficiency, equipment operation stability and ion beam output consistency.

[0008] The above-mentioned technical objective of the present invention is achieved through the following technical solution:

[0009] A multi-filament ion source, including

[0010] An ion source chamber, which has an internal cavity structure for ionization;

[0011] A gas supply assembly is used to uniformly input the working gas into the ion source chamber;

[0012] A multi-filament ionization assembly, distributed along the length of the ion source chamber, is used to ionize the input working gas into plasma;

[0013] Power supply protection components are used to provide electrical energy to multi-filament ionization components;

[0014] A magnet assembly used to generate a magnetic field within an ion source chamber and to confine the distribution of plasma within the ion source chamber by means of the magnetic field;

[0015] Extraction electrode assembly, which is used to directionally extract plasma from the ion source chamber.

[0016] Furthermore, the ion source chamber includes an internally rectangular cavity structure, a plurality of gas inlets communicating with the cavity structure on one side of the ion source chamber, and an ion outlet communicating with the cavity structure on the other side of the ion source chamber.

[0017] Furthermore, the gas supply assembly includes an inlet pipe, a main pipe, and several gas delivery pipes;

[0018] One end of the air intake pipe is provided with an air inlet for connecting to an air source, and the working gas provided by the air source is input into the main pipeline through the air inlet.

[0019] The main pipeline is arranged along the length of the ion source chamber, and several gas supply pipelines are provided along the outer surface of the main pipeline. The gas supply pipelines are connected to the gas inlet of the ion source chamber, and are used to uniformly input the working gas in the main pipeline into the cavity structure of the ion source chamber.

[0020] Furthermore, the multi-filament ionization assembly includes a base disposed on the ion source chamber, a set of terminals connected to the power supply protection assembly is provided on the top of the base, cooling pipes are provided along the terminals, a filament mounting component is provided at the bottom of the terminals, and is electrically connected to the filament through the filament mounting component, the filament being located inside the ion source chamber.

[0021] Furthermore, the power supply protection component includes a substrate disposed on the top of the ion source chamber, a plurality of power supply columns are disposed on the substrate, and power supply columns are provided with power connection terminals and a first conductive element. The power supply columns are connected to the power supply through the power connection terminals and are electrically connected to the wiring terminals of the multi-filament ionization component through the first conductive element.

[0022] A second conductive element is provided on the side of the first conductive element and is connected to the avalanche diode through the second conductive element. The avalanche diode is mounted on the substrate and grounded through a grounding terminal provided on the substrate.

[0023] Furthermore, a set of sidewalls of the ion source chamber are provided with a sandwich cavity, and a magnet assembly is disposed in the sandwich cavity. The magnet assembly includes several sets of magnets fixed on the sandwich cavity. The magnets are respectively disposed on opposite sides of the ion source chamber, and a magnetic field is formed in the cavity structure inside the ion source chamber, and the distribution of plasma in the ion source chamber is constrained by the magnetic field.

[0024] Furthermore, the extraction electrode assembly is disposed at the ion extraction outlet of the ion source chamber, and includes...

[0025] The extraction electrode is located on the side of the cavity structure near the ion source chamber at the ion extraction outlet. By applying a negative potential relative to the plasma, an electric field is formed between the plasma and the extraction electrode. Under the action of the electric field, the plasma is extracted from the ion source chamber through the ion extraction outlet.

[0026] The accelerating electrode, located downstream of the extraction electrode, is used to apply a high voltage to the plasma, increase its kinetic energy, and form a high-energy directional ion beam.

[0027] The suppression electrode, located downstream of the acceleration electrode, is used to block ions reflected from the downstream target chamber from flowing back into the ion source chamber, thus preventing plasma disturbance.

[0028] A method for operating a multi-filament ion source includes the following steps:

[0029] S1. The working gas from the gas source is input into the main pipeline through the inlet pipe. After entering the main pipeline, the working gas flows inside the main pipeline and is evenly input into the ion source chamber through several gas delivery pipelines evenly distributed along the main pipeline.

[0030] S2. The input end of the power supply column is connected to the power supply through the power connection terminal, and the output end of the power supply column is electrically connected to the wiring terminal of the multi-filament ionization assembly through the first conductive element, and supplies power to the filament mounting component and filament connected to the wiring terminal;

[0031] S3. The filament is located in the ion source chamber. When it is energized, it ionizes the working gas into plasma. Under the magnetic field constraint formed by the magnet assembly, the plasma is evenly distributed in the ion source chamber.

[0032] S4. The extraction electrode is working. By applying a negative potential relative to the plasma, an electric field is formed between the plasma and the extraction electrode. Under the action of the electric field, the plasma is extracted from the ion source chamber through the ion extraction outlet.

[0033] S5. The extracted plasma, under the high voltage applied by the accelerating electrode, forms a high-energy directional ion beam and enters the downstream target chamber.

[0034] Furthermore, step S3 also includes: during the operation of the filament, if a filament failure causes a voltage rise, the avalanche diode is broken down, and the grounding circuit is connected.

[0035] Furthermore, step S5 also includes: providing a suppression electrode downstream of the accelerating electrode, which is used to block ions reflected from the downstream target chamber from flowing back into the ion source chamber, thereby avoiding plasma disturbance.

[0036] In summary, the present invention has the following beneficial effects:

[0037] By using a distributed filament ionization assembly and a uniform gas supply, the working gas is ensured to be uniformly ionized in the chamber, forming a stable plasma distribution. This solves the problem of uneven plasma distribution and has the advantages of improving ionization efficiency, equipment operation stability, and ion beam output consistency. Attached Figure Description

[0038] Figure 1 This is a schematic diagram of the structure of the multi-filament ion source described in this invention.

[0039] Figure 2This is a schematic diagram of the bottom structure of the multi-filament ion source described in this invention.

[0040] Figure 3 This is a schematic diagram of the gas supply assembly described in this invention.

[0041] Figure 4 This is a schematic diagram of the multi-filament ionization assembly described in this invention.

[0042] Figure 5 This is a schematic diagram of the power supply protection component described in this invention.

[0043] Figure 6 This is a schematic diagram of the lead-out electrode assembly described in this invention. Detailed Implementation

[0044] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below with reference to the figures and specific embodiments.

[0045] like Figures 1 to 6 As shown, the present invention proposes a multi-filament ion source, comprising an ion source chamber 1, which has an internal cavity structure 11 for ionization; a gas supply assembly 2, which uniformly inputs working gas into the ion source chamber 1; a multi-filament ionization assembly 3, which is distributed along the length of the ion source chamber 1, for ionizing the input working gas into plasma; a power supply protection assembly 4, which provides electrical energy to the multi-filament ionization assembly 3; a magnet assembly 5, which forms a magnetic field in the ion source chamber 1 and constrains the distribution of plasma in the ion source chamber 1 through the magnetic field; and an extraction electrode assembly 6, which directionally extracts plasma from the ion source chamber 1.

[0046] For ease of understanding, the following explains some key terms in this embodiment:

[0047] Ion source chamber 1 is the core structure of the ion source, providing a controlled vacuum environment for the introduction, ionization, and generation and confinement of the working gas. Its internal cavity structure 11 is the region where plasma is generated and exists.

[0048] Gas supply assembly 2 is responsible for precisely introducing the working gas supplied by an external gas source into the ion source chamber 1. Its function is to ensure that the working gas can enter the ionization region in a controlled manner, providing the material basis for plasma generation.

[0049] The multi-filament ionization assembly 3 is a key component in plasma generation. It contains multiple filaments that emit electrons by heating the filaments, ionizing the working gas to form plasma. The distribution of multiple filaments is designed to improve the uniformity and efficiency of the ionization region.

[0050] The power supply protection component 4 provides the necessary electrical energy to the multi-filament ionization component 3 to maintain the normal operation of the filaments. Simultaneously, it integrates protection functions designed to address potential abnormalities during filament operation, ensuring the stability and safety of the system.

[0051] Magnet assembly 5 generates a specific magnetic field inside the ion source chamber 1. The function of this magnetic field is to confine the plasma, guide its distribution within the chamber, thereby optimizing the plasma density and uniformity, and helping to improve ion extraction efficiency.

[0052] The extraction electrode assembly 6 is located at the outlet of the ion source chamber 1. Its function is to directionally extract the plasma generated inside the chamber by applying an electric field, forming an ion beam with specific energy and direction for subsequent applications.

[0053] The ion source chamber 1 is one of the core structures of this application. It has an internal cavity structure 11 for ionization, which provides a closed space for the ionization of the working gas.

[0054] The gas supply assembly 2 is used to uniformly input the working gas into the ion source chamber 1. Specifically, the gas supply assembly 2 may include a single gas inlet pipe connected to an external gas source, which injects the working gas directly into the cavity structure 11 of the ion source chamber 1 through multiple orifices. After entering the chamber, the working gas is distributed within the chamber by its own diffusion.

[0055] The multi-filament ionization assembly 3 is distributed along the length of the ion source chamber 1 and is used to ionize the input working gas into plasma. In one implementation, the multi-filament ionization assembly 3 can be composed of multiple independent filament units, each containing one filament. These filaments are fixed inside the ion source chamber 1 by simple supports and are connected to an external power source. When the filaments are energized, they generate electrons through thermoemission, thereby ionizing the working gas.

[0056] The power supply protection component 4 is used to provide electrical energy to the multi-filament ionization component 3. This component can integrate basic overcurrent protection devices, such as fuses or circuit breakers, to cut off the power supply in the event of abnormal current.

[0057] The magnet assembly 5 is used to generate a magnetic field within the ion source chamber 1 and to confine the distribution of plasma within the ion source chamber 1 by means of the magnetic field. Specifically, the magnet assembly 5 may consist of several permanent magnets, which, or coils, are placed outside the ion source chamber 1 and generate a magnetic field in the internal cavity structure 11 through the chamber wall. This magnetic field exerts a Lorentz force on the charged particles in the plasma, thereby limiting the radial diffusion of the plasma.

[0058] The extraction electrode assembly 6 is used to directionally extract plasma from the ion source chamber 1. It is located at the outlet of the ion source chamber 1. A negative potential relative to the plasma is applied through a plate, forming an electric field between the plasma and the electrode assembly 6, thereby extracting ions from the plasma from the chamber.

[0059] This application effectively solves the problems of insufficient ionization efficiency and uniformity, short filament life, poor system stability, and low plasma confinement and extraction efficiency faced by traditional ion sources in semiconductor manufacturing, material surface modification, and other fields by integrating multi-filament ionization, uniform gas injection, magnetic field confinement, and power supply protection mechanisms. Therefore, this application can generate a wider and more uniform ribbon-shaped ion beam, improving the intensity and stability of the ion beam and meeting the high-precision ion source requirements of advanced manufacturing.

[0060] In some of the embodiments described above in this application, an ion source chamber is proposed to provide an ionization space to accommodate the plasma generation process. However, in its implementation, since the shape and port position of the chamber structure are not specifically defined, the gas input may be concentrated in a single area, resulting in uneven distribution. The ion extraction path may be blocked or the direction may not be optimized, affecting the plasma uniformity and extraction efficiency, thereby reducing the beam quality.

[0061] In response, this application further proposes a multi-filament ion source, wherein the ion source chamber 1 includes a rectangular cavity structure 11 inside, a plurality of gas inlet ports 12 communicating with the cavity structure 11 on one side of the ion source chamber 1, and an ion outlet port 14 communicating with the cavity structure 11 on the other side of the ion source chamber 1.

[0062] Specifically, the cavity structure 11 inside the ion source chamber 1 refers to the space used for plasma generation and confinement, and its geometry is cuboid. This regular geometry helps to form a uniform distribution of the magnetic field inside the chamber, thereby effectively confining the plasma, avoiding local density differences, and providing a stable plasma source for subsequent ion extraction.

[0063] In addition, several gas inlets 12 communicating with the cavity structure 11 are provided on one side of the ion source chamber 1. These gas inlets 12 refer to multiple holes or channels evenly distributed along the length of the side wall of the ion source chamber 1 for introducing working gas. This multi-point, side-injection method aims to overcome the uneven gas distribution problem caused by single-point injection, ensuring a highly uniform concentration distribution of the working gas throughout the cavity structure 11, thus providing a foundation for subsequent uniform ionization.

[0064] An ion outlet 14 communicating with the cavity structure 11 is provided on the other side of the ion source chamber 1. The ion outlet 14 is used to extract plasma ions generated by ionization. The outlet 12 can be a narrow opening parallel to the length direction of the cavity structure 11, and its length and width can be adjusted according to the required ion beam width.

[0065] Through the above technical solution, the ion source chamber 1 adopts a rectangular cavity structure 11. Its regular geometry facilitates the uniform distribution of the magnetic field generated by the magnet assembly 5 within the chamber, effectively confining the plasma, avoiding local density differences, and providing a stable plasma source for subsequent ion extraction. Simultaneously, several gas inlets 12 connected to the cavity structure 11 are provided on one side of the ion source chamber 1. This multi-point, side-injection method overcomes the problem of uneven gas distribution caused by single-point injection, ensuring a highly uniform concentration distribution of the working gas throughout the cavity structure 11, providing a foundation for the uniform ionization of the multi-filament ionization assembly 3. Furthermore, an ion outlet 14 connected to the cavity structure 11 is provided on the other side of the ion source chamber 1, forming a clear plasma flow path. This helps reduce plasma backflow and disturbance within the chamber, thereby optimizing the directional flow of the ion beam and improving extraction efficiency and beam stability. These structural optimizations work synergistically to significantly improve plasma uniformity, extraction efficiency, and ion beam quality, making it particularly suitable for applications requiring large-area, highly uniform ribbon-shaped ion beams.

[0066] In some embodiments described above in this application, a gas supply component is proposed to input working gas into the ion source chamber. However, in its implementation, due to the single gas injection method and lack of a uniform distribution mechanism, a concentration gradient of working gas appears in the length direction of the chamber, which affects the uniformity and stability of plasma generation.

[0067] In this regard, this application further proposes that the gas supply assembly 2 includes an inlet pipe 21, a main pipeline 22, and a plurality of gas delivery pipelines 23; one end of the inlet pipe 21 is provided with an inlet for connecting to a gas source, and the working gas provided by the gas source is input into the main pipeline 22 through the inlet; the main pipeline 22 is arranged along the length direction of the ion source chamber 1, and a plurality of gas delivery pipelines 23 are provided along the outer surface of the main pipeline 22, and are connected to the gas input port 12 of the ion source chamber 1 through the gas delivery pipelines 23, which are used to uniformly input the working gas in the main pipeline 22 into the cavity structure 11 in the ion source chamber 1.

[0068] Specifically, the gas supply assembly 2 is a key system for introducing the working gas into the ion source chamber 1, and its core function is to achieve precise control and uniform distribution of the working gas. The inlet pipe 21 serves as the gas inlet, responsible for receiving the working gas from an external gas source; the main pipeline 22 serves as the main channel for gas distribution, responsible for transmitting the gas along a specific direction; and several gas delivery pipelines 23 serve as branch channels, responsible for precisely delivering the gas from the main pipeline 22 to various areas of the ion source chamber 1. This hierarchical structural design aims to optimize the gas flow path, ensuring that the gas undergoes preliminary homogenization before entering the ion source chamber 1. The inlet port at one end of the inlet pipe 21 can be reliably connected to an external gas source (such as a high-purity gas cylinder or gas generator) using standard interfaces (such as compression fittings or flange connections), ensuring that the working gas (e.g., argon, nitrogen, oxygen, etc.) can be introduced stably and without leakage. After entering the inlet pipe 21 through the inlet port, the working gas is guided to the main pipeline 22, laying the foundation for subsequent uniform distribution.

[0069] The arrangement of the main gas pipe 22 is crucial for achieving uniform gas distribution within the ion source chamber 1. Positioning it along the length of the ion source chamber 1 means that the main gas pipe 22 can cover the entire area requiring gas supply. For example, if the cavity structure 11 of the ion source chamber 1 is cuboid, the main gas pipe 22 can be positioned parallel to the long side of this cuboid. This layout ensures that the starting point for gas distribution is evenly distributed along the entire length of the ion source chamber 1, avoiding problems of excessively high or low local gas concentrations.

[0070] The core means of achieving fine gas distribution is to uniformly arrange several gas delivery pipes 23 on the outer surface of the main pipeline 22. These gas delivery pipes 23 can be thin tubes directly led out from the side wall of the main pipeline 22. The number, spacing, and aperture size of the gas delivery pipes 23 can be optimized according to the size of the ion source chamber 1 and the required plasma uniformity. Through these gas delivery pipes 23, the working gas is guided to the preset gas inlet 12 on the ion source chamber 1, thereby realizing multi-point, decentralized gas injection. This technical solution clarifies the ultimate purpose and function of the above structural combination. Through the synergistic effect of the inlet pipe 21, the main pipeline 22, and several gas delivery pipes 23, the working gas can be stably introduced from the gas source, undergo preliminary flow distribution in the main pipeline 22, and finally enter the cavity structure 11 inside the ion source chamber 1 in a uniform manner through multiple gas delivery pipes 23 and gas inlet 12. This uniform input mechanism aims to eliminate the concentration gradient caused by traditional single or local gas injection methods, ensuring that the working gas concentration in the cavity structure 11 remains consistent in all regions, thus providing the necessary conditions for the uniform generation of subsequent plasma.

[0071] Through the above technical solution, when the multi-filament ionization component 3 is ionized, the working gas can maintain a highly uniform concentration distribution in the cavity structure 11. This greatly improves the uniformity and stability of plasma generation, avoids plasma density fluctuations caused by uneven gas distribution, and thus optimizes the overall performance of the ion source and the quality of the ion beam.

[0072] In some of the embodiments described above in this application, a multi-filament ionization assembly is proposed to ionize the working gas into plasma. However, during its implementation, the filament is prone to breakage due to thermal stress, ion sputtering, or oxidation caused by high temperature environment, which affects the system stability and lifespan. At the same time, the lack of an effective cooling mechanism exacerbates the heat accumulation problem, ultimately causing frequent equipment failures and maintenance needs.

[0073] In this regard, this application further proposes a multi-filament ionization assembly 3, which includes a base 31 disposed on an ion source chamber 1, a set of terminals 32 connected to a power supply protection assembly 4 on the top of the base 31, a cooling pipe 33 disposed along the terminals 32, and a filament mounting member 34 disposed at the bottom of the terminals 32, and electrically connected to the filament 35 through the filament mounting member 34.

[0074] Specifically, the base 31, serving as the structural foundation of the multi-filament ionization assembly 3, is mounted on the ion source chamber 1, providing robust mechanical support for the entire assembly. The base 31 is typically made of high-strength, high-temperature-resistant materials, such as stainless steel, molybdenum alloy, or special ceramics, to ensure structural integrity and stability even under the high-temperature, plasma sputtering environment inside the ion source chamber 1. Its fixing methods can include bolting, welding, or snap-fitting, designed to effectively resist vibrations or displacements that may occur during operation, thereby preventing premature failure of the filament 35 due to uneven stress. A set of terminals 32 connected to the power supply protection assembly 4 is located on the top of the base 31. These terminals 32 are critical nodes for the transmission of electrical energy from the power supply protection assembly 4 to the filament 35, and are typically made of highly conductive materials such as copper or silver alloys. They not only ensure a stable input of electrical energy but also provide a convenient interface for integrating the power supply protection mechanism. Cooling pipes 33 are provided along the terminals 32, their core function being active cooling of the critical components for electrical energy transmission. Because the filament 35 generates a large amount of heat during operation, this heat is conducted to the terminal 32 through the electrical connection path. The cooling pipe 33 removes this heat through a circulating cooling medium (such as deionized water, cooling oil, or inert gas), effectively reducing the temperature of the terminal 32 and its surrounding area, thereby reducing the thermal stress impact of heat accumulation on the filament 35 and its connectors. The cooling pipe 33 can be designed to be tightly wound around the outside of the terminal 32 in a coil form to achieve efficient heat exchange. A filament mounting component 34 is located at the bottom of the terminal 32. This mounting component 34 not only mechanically fixes the filament 35 but also serves as an intermediary structure for electrical connection, ensuring that electrical energy is stably and efficiently transferred from the terminal 32 to the filament 35. The filament mounting component 34 is typically made of high-temperature resistant, highly conductive materials, such as molybdenum, tungsten, or graphite. Its structural design can employ a clamping, threaded, or welded type to facilitate the installation and replacement of the filament 35. The filament 35 is electrically connected to the multi-filament ionization assembly 3 through the filament mounting component 34. Filament 35 is the core ionization component of the multi-filament ion source. When heated by electricity, it emits thermionic electrons, ionizing the working gas into plasma. Filament 35 is typically made of materials with high melting points and high electron emission efficiency, such as tungsten wire, lanthanide oxide-coated tungsten wire, or lanthanum carbide wire.

[0075] Through the above technical solutions, the structure of the multi-filament ionization assembly 3 has been significantly optimized. The base 31 provides robust mechanical support for the entire assembly, ensuring the positional stability of the filament 35 in high-temperature and plasma environments, and effectively preventing uneven stress on the filament due to vibration or displacement. As a key link in power transmission, the terminal block 32's connection with the power supply protection assembly 4 lays the foundation for a fast-response overvoltage protection mechanism. Crucially, the cooling pipes 33 along the terminal block 32 can actively and efficiently cool hot spots along the power transmission path, significantly reducing heat accumulation in the filament 35 and its connection points, thereby effectively mitigating the problem of filament 35 breaking due to thermal stress, oxidation, or sputtering. The filament mounting component 34 not only securely fixes the filament 35 and ensures electrical connection, but also disperses heat and mechanical load through its structural design, further protecting the filament 35. Overall, these synergistic features directly solve the technical problem of filament failure under high-temperature ionization environments, significantly improve the system stability, reliability and service life of multi-filament ion sources, reduce the frequency of equipment downtime for maintenance, and thus ensure the long-term efficient operation of the ion source.

[0076] In some of the embodiments described above in this application, a power supply protection component is proposed to provide power to the multi-filament ionization component. However, in its implementation, when a filament failure causes an abnormal voltage rise, there is a lack of a fast and effective protection mechanism, which may lead to power supply damage or chamber contamination, affecting system stability and equipment lifespan.

[0077] To address this, this application further proposes a power supply protection component, specifically including a substrate 41 disposed on the top of the ion source chamber 1. A plurality of power supply posts 42 are provided on the substrate 41, and each power supply post 42 is provided with a power connection terminal 43 and a first conductive element 44. The power supply posts 42 are connected to a power source through the power connection terminal 43 and are electrically connected to the wiring terminal 32 of the multi-filament ionization component 3 through the first conductive element 44. A second conductive element 45 is provided on the side of the first conductive element 44 and is connected to an avalanche diode 46 through the second conductive element 45. The avalanche diode 46 is mounted on the substrate 41 and grounded through a grounding terminal 47 disposed on the substrate 41.

[0078] Specifically, the substrate 41 serves as the physical support structure for the entire power supply and protection assembly. It is located on top of the ion source chamber 1, providing a stable mounting platform for the assembly and ensuring the structural stability and reliability of the entire system.

[0079] The power supply post 42 is a key component for power transmission. It is mounted on the substrate 41 and is used to carry and transmit electrical energy. The power supply post 42 can be designed as a solid conductor post, for example, using high-purity copper or aluminum alloy materials, to ensure low resistance loss and high conductivity efficiency.

[0080] The power terminal 43 is the interface for connecting the power supply post 42 to an external power source. It is installed on the power supply post 42 to ensure reliable power input. The power terminal 43 can be a bolt-fit design, which securely fixes the power cord to the power supply post 42 with bolts to provide a stable and reliable electrical connection; or it can be a spring-loaded snap-fit ​​or plug-in terminal for easy installation, disassembly and maintenance.

[0081] The first conductive element 44 is used to transmit electrical energy from the power supply column 42 to the terminal 32 of the multi-filament ionization assembly 3, thereby achieving efficient distribution of electrical energy. The first conductive element 44 can be made of high-purity copper or silver-plated copper to minimize resistance loss and ensure efficient power transmission. To adapt to specific installation spaces or to cope with vibration, it can be in the form of a flexible conductive strip or conductive sheet.

[0082] The second conductive element 45 is disposed to the side of the first conductive element 44, and its main function is to serve as a connection path for the avalanche diode 46, guiding abnormal current when needed. The second conductive element 45 can be a conductive bridge for directly connecting the first conductive element 44 and the avalanche diode 46.

[0083] The avalanche diode 46 is the core component of this protection mechanism. It is mounted on the substrate 41 and provides rapid overvoltage protection in the event of an abnormal voltage rise. The avalanche diode 46 can be a silicon-based PN junction avalanche diode, which has accurate breakdown voltage characteristics and a fast response time, enabling it to react quickly to overvoltage events; or, for applications requiring higher power and higher temperature environments, a silicon carbide (SiC) avalanche diode can be used, which has superior voltage and temperature withstand performance.

[0084] Grounding terminal 47 is used to ground avalanche diode 46, forming a safe current discharge path to ensure reliable electrical connection and good grounding effect.

[0085] Through the above technical solution, this application provides an efficient and reliable power supply protection mechanism. When the filament 35 in the multi-filament ionization assembly 3 fails for any reason, causing an abnormal increase in the voltage across its terminals, the abnormal voltage will quickly act on the second conductive element 45 connected to the side of the first conductive element 44, and then be applied to the avalanche diode 46. Once the voltage exceeds the breakdown threshold of the avalanche diode 46, the avalanche diode 46 will immediately break down and conduct, forming a low-impedance discharge path. At this time, the abnormal current will be quickly conducted to the ground through the second conductive element 45 and the avalanche diode 46 via the grounding terminal 47, thereby effectively bypassing the excessive voltage and current and preventing it from directly acting on the power supply or other sensitive circuits. This fast-response overvoltage protection mechanism can significantly prevent the power supply from being damaged due to overload, while avoiding plasma instability or chamber contamination caused by filament failure. It greatly improves the operational stability and equipment life of the multi-filament ion source, reduces maintenance costs and downtime, and ensures the reliability of the ion source during long-term operation.

[0086] In some of the above-mentioned schemes of this application, a magnet assembly is proposed to form a magnetic field to confine the plasma distribution in the ion source chamber 1. However, in this process, due to improper magnetic field configuration, such as embedding it outside the chamber, the confinement effect is weak, resulting in plasma diffusion, insufficient ion extraction region density, and limited beam intensity.

[0087] In response, this application further proposes a multi-filament ion source, wherein a set of sidewalls of the ion source chamber 1 are provided with a sandwich cavity 13, and a magnet assembly 5 is disposed in the sandwich cavity 13. The magnet assembly 5 includes several sets of magnets 51 fixed on the sandwich cavity 13. The magnets 51 are respectively disposed on opposite sides of the ion source chamber 1, and a magnetic field is formed in the cavity structure 11 inside the ion source chamber 1, and the distribution of plasma in the ion source chamber 1 is constrained by the magnetic field.

[0088] Specifically, a set of sidewalls of the ion source chamber 1 are provided with a sandwich cavity 13. The sandwich cavity 13 refers to an independent space constructed within the sidewalls of the ion source chamber 1, so that the chamber wall is no longer a single solid structure, but rather forms a gap within it that can accommodate other components. For example, the sidewalls of the ion source chamber 1 can adopt a double-wall structure, with grooves or channels pre-machined into the sidewalls of the ion source chamber 1, and then sealed with a cover plate, seal, or other structure to form the required sandwich cavity 13. The main function of the sandwich cavity 13 is to provide an internal mounting position for the magnet assembly 5, allowing it to be more closely integrated with the plasma region inside the ion source chamber 1, thereby optimizing the effect of the magnetic field on the plasma.

[0089] Based on this, the magnet assembly 5 is disposed within the interlayer cavity 13. The magnet assembly 5 is the device responsible for generating the magnetic field, and its entirety or part thereof is precisely placed inside the aforementioned interlayer cavity 13. The magnet assembly 5 can be prefabricated into multiple independent magnetic units, which are then installed as a whole into the reserved space of the interlayer cavity 13. Placing the magnetic field source directly on the inner sidewall of the ion source chamber 1, rather than on the outside, significantly enhances the confinement capability of the magnetic field on the plasma within the cavity and reduces magnetic field attenuation.

[0090] Furthermore, the magnet assembly 5 includes several sets of magnets 51 fixed to the interlayer cavity 13. The magnets 51 are the magnetic material units in the magnet assembly 5 that actually generate the magnetic field, and are typically permanent magnets. Several sets of magnets 51 mean that multiple independent magnets or magnet arrays can be configured as needed. The magnets 51 can be mechanically fixed, for example, using high-performance adhesives or by installing them within the interlayer cavity 13, to ensure they maintain a stable position even under high temperature or vibration conditions. This ensures the positional stability of the magnets 51 during ion source operation, preventing displacement due to external factors or their own magnetic force, thereby guaranteeing the accuracy and stability of the magnetic field distribution.

[0091] Meanwhile, magnets 51 are respectively disposed on opposite sides of the ion source chamber 1. Opposite sides refer to two mutually opposing sides within the cavity structure 11 inside the ion source chamber 1. For example, in a rectangular or cuboid-shaped cavity structure 11, magnets 51 can be arranged on opposite long side walls. Magnets 51 can be arranged symmetrically or quasi-symmetrically within the interlayer cavity 13 of the opposite side walls of the cavity structure 11 along the length of the ion source chamber 1. This symmetrical or opposite arrangement helps to form a uniform and balanced magnetic field distribution inside the cavity structure 11, thereby achieving effective and uniform confinement of the plasma.

[0092] With the above configuration, a magnetic field is formed in the cavity structure 11 inside the ion source chamber 1. The magnetic field refers to the distribution region of magnetic field lines generated by the magnets 51, filling the cavity structure 11 inside the ion source chamber 1. This magnetic field is the core environment for plasma ionization and transport. The arrangement of the magnets 51 can be carefully designed; for example, by alternating the magnetic pole directions of adjacent magnets, closed magnetic field lines are formed inside the cavity structure 11, constructing a magnetic cage structure to confine the plasma to the central region, thereby optimizing the plasma density distribution. The magnetic field directly acts on the core region where plasma is generated and extracted, providing a confinement force for charged particles and reducing their loss to the cavity walls.

[0093] Magnetic field confinement refers to the use of magnetic field lines to restrict the trajectory of charged particles (mainly electrons and ions) in a plasma, causing them to accumulate in a specific region, thereby increasing plasma density and reducing collision losses with the cavity walls. The magnetic field can form a magnetic mirror or magnetic cage structure, and through the Lorentz force exerted on the charged particles by the magnetic field lines, the plasma is confined to the central region of the cavity structure 11, effectively suppressing its radial diffusion.

[0094] The internal magnetic field configuration of this invention significantly enhances the confinement effect on plasma, effectively solving the problems of weak confinement and severe plasma diffusion associated with traditional external magnetic fields. Because the magnetic field is closer to the plasma region, its strength and uniformity are improved, enabling more effective restriction of plasma distribution within the cavity structure 11 and reducing plasma loss to the cavity walls. This results in a higher and more uniform plasma density inside the ion source chamber 1, providing a superior plasma source for subsequent ion extraction, ultimately improving the intensity and uniformity of the ion beam and meeting the demand for a high-quality ion beam.

[0095] In some embodiments described above in this application, an extraction electrode assembly is proposed to directionally extract plasma from the ion source chamber. However, during its implementation, the extraction electrode assembly may not be able to effectively enhance the kinetic energy of the ion beam and prevent ion backflow, resulting in plasma disturbance and beam instability, which affects the overall efficiency and reliability of the ion source.

[0096] To address this, this application further proposes a multi-filament ion source, wherein the extraction electrode assembly 6 is disposed at the ion extraction outlet 14 of the ion source chamber 1. The extraction electrode assembly 6 includes an extraction electrode 61, an accelerating electrode 62, and a suppressing electrode 63. The extraction electrode 61 is located at the ion extraction outlet 14 near the cavity structure 11 of the ion source chamber 1. By applying a negative potential relative to the plasma, an electric field is formed between the plasma and the extraction electrode 61, and the plasma is extracted from the ion source chamber 1 through the ion extraction outlet 14 under the influence of the electric field. The accelerating electrode 62 is located downstream of the extraction electrode 61 and is used to apply a high voltage to the plasma, increasing its kinetic energy and forming a high-energy directional ion beam. The suppressing electrode 63 is located downstream of the accelerating electrode 62 and is used to block ions reflected from the downstream target chamber from flowing back into the ion source chamber 1, thus preventing plasma disturbance.

[0097] The extraction electrode assembly 6 is a key component used to directionally extract the plasma generated within the ion source chamber 1. Its overall structure typically consists of multiple cooperating electrodes to achieve the extraction, acceleration, and focusing of the ion beam. This assembly is usually installed at the ion outlet 14 of the ion source chamber 1 to ensure that the plasma can be effectively extracted from the interior of the chamber.

[0098] Extraction electrode 61 is the first electrode in extraction electrode assembly 6, and its main function is to create an initial electric field to extract plasma from ion source chamber 1. Extraction electrode 61 is located at ion outlet 14 near the cavity structure 11 of ion source chamber 1. By applying a negative potential relative to the plasma to extraction electrode 61, an electric field can be formed between the plasma and extraction electrode 61. This electric field attracts positive ions in the plasma, causing them to pass through ion outlet 14, thereby extracting the plasma from ion source chamber 1. The negative potential can be applied in various ways; for example, a stable negative bias can be provided using a DC power supply, or a periodic negative bias can be provided using a pulsed power supply to adapt to different extraction requirements. The structure of extraction electrode 61 can be designed as a grid-like electrode to optimize the extraction efficiency and uniformity of the ion beam.

[0099] The accelerating electrode 62 is located downstream of the extraction electrode 61. Its core function is to apply a high voltage to the extracted plasma to significantly enhance the kinetic energy of the ions, thereby forming a high-energy directional ion beam. After the extraction electrode 61 initially extracts the plasma, the accelerating electrode 62 further accelerates the plasma through the potential difference between itself and the extraction electrode 61 or the plasma. The applied high voltage is typically a DC high voltage, the value of which determines the final energy of the ion beam.

[0100] The suppression electrode 63 is located downstream of the accelerating electrode 62. Its main purpose is to block ions reflected from the downstream target chamber from flowing back into the ion source chamber 1, thereby preventing plasma disturbance. After the ion beam bombards the target material, some ions may be backscattered. If these particles flow back into the ion source chamber 1, they will interfere with the plasma state within the chamber, affecting the stability and beam quality of the ion source. The suppression electrode 63 is typically applied with a negative potential to form a potential barrier, preventing positively charged backflowing ions from passing through. Furthermore, the suppression electrode 63 can also be used to suppress electrons entering the ion source chamber 1 from downstream, further stabilizing the operating environment of the ion source. The suppression electrode 63 can be implemented as a grid electrode with a negative bias voltage.

[0101] Through the above technical solution, the extraction electrode assembly 6 of this application adopts a three-stage electrode collaborative design, which effectively solves the problems of insufficient kinetic energy and backflow disturbance during plasma extraction, ensuring efficient directional output of the ion beam and maintaining stability. Specifically, the extraction electrode 61, by applying a negative potential, precisely creates a directional electric field at the ion extraction outlet 14 of the ion source chamber 1, which can efficiently and stably extract plasma from the cavity structure 11, avoiding the beam divergence and low extraction efficiency problems that may be caused by traditional single-stage extraction. On this basis, the accelerating electrode 62 is located downstream of the extraction electrode 61. By applying a high voltage, it performs secondary acceleration on the extracted ions, significantly improving the kinetic energy of the ion beam, thereby forming a high-energy directional ion beam, solving the problems of insufficient ion beam energy and weak penetration, and enhancing the effectiveness of the ion beam in subsequent applications. Furthermore, the suppression electrode 63 is positioned downstream of the accelerating electrode 62. By forming a potential barrier, it effectively blocks the backflow of ions reflected from the downstream target chamber into the ion source chamber 1, fundamentally eliminating factors that could lead to plasma disturbances and beam instability. This ensures the purity and stability of the plasma environment inside the ion source chamber 1, thereby guaranteeing the continuity and high quality of the ion beam. This hierarchical and complementary electrode layout allows the directional extraction of the extraction electrode 61 to lay the foundation for the energy enhancement of the accelerating electrode 62, while the high-energy output of the accelerating electrode 62 creates favorable conditions for the backflow blocking of the suppression electrode 63. Overall, this optimizes the extraction efficiency, beam energy, and stability of the ion source, significantly improving the overall performance and reliability of the ion source.

[0102] In some of the solutions described above in this application, a method for operating a multi-filament ion source is proposed to generate plasma and extract an ion beam. However, in this process, uneven gas input may lead to uneven plasma density distribution, the lack of a rapid protection mechanism in case of filament failure may cause equipment damage, and ion beam divergence and backflow problems during extraction may affect beam stability and efficiency. To address these issues, this application proposes a method for operating a multi-filament ion source, comprising the following steps:

[0103] In step S1, the working gas from the gas source is input into the main pipeline 22 through the inlet pipe 21. After entering the main pipeline 22, the working gas flows inside the main pipeline 22 and is uniformly input into the ion source chamber 1 through several gas delivery pipelines 23 evenly distributed along the main pipeline 22. This step aims to ensure a high degree of spatial uniformity of the working gas when it enters the ion source chamber 1. Specifically, various technical means can be used to achieve uniform input of the working gas. For example, a micro flow limiter or orifice plate can be installed at the inlet of each gas delivery pipeline 23 to precisely control the gas flow rate of each branch, thereby compensating for any pressure gradient that may exist inside the main pipeline 22 and ensuring that the flow rate of each gas delivery pipeline 23 is consistent. In addition, a perforated plate or gas diffuser with uniformly distributed micropores can be installed at the inlet of the ion source chamber 1, at the location where it connects to the gas delivery pipeline 23, to further refine the gas flow and ensure that the gas reaches a highly uniform distribution state before entering the cavity structure 11.

[0104] In step S2, the input terminal of the power supply column 42 is connected to a power source via the power terminal 43, and the output terminal of the power supply column 42 is electrically connected to the wiring terminal 32 of the multi-filament ionization assembly 3 via the first conductive element 44, supplying power to the filament mounting component 34 and the filament 35 connected to the wiring terminal 32. This step details the power supply path of the multi-filament ionization assembly 3. To ensure stable operation of the filament 35, a high-precision constant current source can be used. Even if the resistance of the filament 35 fluctuates slightly due to temperature changes during operation, a stable current output can be maintained, thereby ensuring the stability of the heating temperature and electron emission rate of the filament 35. Furthermore, to achieve finer control or extend the life of the filament 35, a pulsed DC or pulsed AC power supply mode can be used, and the heating power of the filament 35 can be precisely controlled by adjusting the pulse width and frequency. For the multiple filaments 35 in the multi-filament ionization assembly 3, multiple independent power supply circuits can also be used. Each filament 35 is powered by an independent power supply post 42 and related components, thereby realizing independent control and fault isolation of each filament 35 and improving the flexibility and reliability of the system.

[0105] In step S3, the filament 35 is located inside the ion source chamber 1. When energized, it ionizes the working gas into plasma. Under the magnetic field confinement formed by the magnet assembly 5, the plasma is uniformly distributed within the ion source chamber 1. During the operation of the filament 35, if a fault occurs causing a voltage rise, the avalanche diode 46 breaks down, and the grounding circuit is activated. This step covers plasma generation, confinement, and a crucial fault protection mechanism. The magnet assembly 5 optimizes the magnetic field strength and distribution to achieve the best confinement effect on the plasma, ensuring a uniform distribution of plasma within the ion source chamber 1. The magnetic field strength can be adjusted according to the required plasma density and uniformity. Regarding fault protection for the filament 35, the breakdown voltage of the avalanche diode 46 should be precisely selected based on the normal operating voltage of the filament 35 and the allowable overvoltage threshold. Its integration method can be either parallel connection in the filament power supply circuit or tight integration as an independent protection module with the power supply protection assembly 4.

[0106] In step S4, the extraction electrode 61 operates. By applying a negative potential relative to the plasma, an electric field is formed between the plasma and the extraction electrode 61. Under the influence of the electric field, the plasma is extracted from the ion source chamber 1 through the ion extraction port 14. This step describes the initial plasma extraction process. The negative potential applied to the extraction electrode 61 can be designed to be adjustable to precisely control the energy and beam intensity of the extracted ions according to different process requirements and plasma parameters.

[0107] In step S5, the extracted plasma, under the high voltage applied by the accelerating electrode 62, forms a high-energy directional ion beam and enters the downstream target chamber. Downstream of the accelerating electrode 62, a suppressor electrode 63 is provided to block ions reflected from the downstream target chamber from flowing back into the ion source chamber 1, thus preventing plasma disturbance. This step further accelerates and protects the ion beam. The negative potential of the suppressor electrode 63 can be dynamically adjusted according to the vacuum environment of the target chamber, the ion beam energy, and the characteristics of the target material to maximize the blocking of backflowing particles while minimizing the impact on the main ion beam. Since the accelerating electrode 62 and the suppressor electrode 63 are subjected to high voltage and ion bombardment during operation, their materials should be selected for high conductivity, high corrosion resistance, and good heat dissipation performance, and a cooling system should be integrated to maintain a stable operating temperature.

[0108] Through the above technical solutions, the working method of this application effectively solves the problems of uneven gas distribution, filament failure risk, and low ion beam extraction efficiency in ion source operation through a systematic sequence of steps, ensuring the stability and efficiency of plasma generation and ion beam transmission. Specifically, step S1, through a sophisticated gas distribution design, ensures that the working gas is uniformly distributed within the ion source chamber 1, fundamentally solving the problem of uneven plasma density caused by traditional gas injection methods, laying the foundation for subsequent uniform ionization. In steps S2 and S3, the power supply column 42 provides stable power to the filament 35. Simultaneously, the introduction of the avalanche diode 46 allows for rapid breakdown and grounding when the voltage rises abnormally due to a filament failure, achieving millisecond-level rapid overvoltage protection. This effectively prevents damage to the power supply and other precision components due to voltage surges, significantly improving the system's operational reliability and safety, and reducing maintenance costs and downtime. Furthermore, the effective confinement of the plasma by the magnet assembly 5 further ensures the uniform distribution of plasma within the chamber. Steps S4 and S5, through the synergistic effect of the extraction electrode 61, the accelerating electrode 62, and the suppressing electrode 63, construct a highly efficient and controlled ion beam extraction system. The extraction electrode 61 efficiently extracts the plasma from the chamber by applying a negative potential; the accelerating electrode 62 imparts high kinetic energy to the ions, forming a high-energy directional ion beam; while the suppressing electrode 63 cleverly blocks the backflow of ions and secondary electrons reflected from the downstream target chamber into the ion source chamber 1, thereby avoiding plasma disturbance, ensuring the purity and stability of the ion beam, and greatly improving the quality and transmission efficiency of the ion beam.

[0109] In summary, the working method of this application significantly improves the plasma uniformity, system stability, and ion beam quality of multi-filament ion sources through comprehensive optimization of gas uniformity input, filament power supply protection, plasma confinement, and multi-stage ion beam extraction and suppression, thus meeting the needs of high-precision ion sources in high-end manufacturing and scientific research fields.

[0110] In this document, the terms "upper," "lower," "front," "back," "left," "right," "top," "bottom," "inner," "outer," "vertical," and "horizontal," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only used for the clarity of expressing the technical solution and for the convenience of description, and therefore should not be construed as limiting the present invention.

[0111] In this document, the terms “comprising,” “including,” or any other variations thereof are intended to cover non-exclusive inclusion, which includes not only the elements listed but also other elements not expressly listed.

[0112] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of this invention is defined by the appended claims and their equivalents.

Claims

1. A multi-filament ion source, characterized in that, include An ion source chamber (1) is provided inside which a cavity structure (11) for ionization is provided; Gas supply assembly (2) is used to uniformly input working gas into ion source chamber (1); A multi-filament ionization assembly (3) is distributed along the length of the ion source chamber (1) and is used to ionize the input working gas into plasma. Power supply protection component (4), which is used to provide power to the multi-filament ionization component (3); A magnet assembly (5) is used to generate a magnetic field in the ion source chamber (1) and to constrain the distribution of plasma in the ion source chamber (1) by means of the magnetic field; The lead-out electrode assembly (6) is used to directionally lead out the plasma from the ion source chamber (1).

2. The multi-filament ion source according to claim 1, characterized in that, The ion source chamber (1) includes a rectangular cavity structure (11) inside, a plurality of gas inlets (12) communicating with the cavity structure (11) on one side of the ion source chamber (1), and an ion outlet (14) communicating with the cavity structure (11) on the other side of the ion source chamber (1).

3. The multi-filament ion source according to claim 2, characterized in that, The gas supply assembly (2) includes an inlet pipe (21), a main pipe (22), and several gas delivery pipes (23); One end of the air inlet pipe (21) is provided with an air inlet for connecting to the air source, and the working gas provided by the air source is input into the main pipeline (22) through the air inlet; The main pipeline (22) is arranged along the length of the ion source chamber (1), and several gas supply pipelines (23) are provided along the outer surface of the main pipeline (22). The gas supply pipelines (23) are connected to the gas inlet (12) of the ion source chamber (1) through the gas supply pipelines (23), which are used to uniformly input the working gas in the main pipeline (22) into the cavity structure (11) of the ion source chamber (1).

4. The multi-filament ion source according to claim 1, characterized in that, The multi-filament ionization assembly (3) includes a base (31) disposed on the ion source chamber (1). A set of terminals (32) connected to the power supply protection assembly (4) is provided on the top of the base (31). A cooling pipe (33) is provided along the terminals (32). A filament mounting component (34) is provided at the bottom of the terminals (32) and is electrically connected to the filament (35) through the filament mounting component (34). The filament (35) is located inside the ion source chamber (1).

5. The multi-filament ion source according to claim 4, characterized in that, The power supply protection component (4) includes a substrate (41) disposed on the top of the ion source chamber (1), a plurality of power supply posts (42) are provided on the substrate (41), and a power connection terminal (43) and a first conductive element (44) are provided on the power supply post (42). The power supply post (42) is connected to the power supply through the power connection terminal (43) and is electrically connected to the wiring terminal (32) of the multi-filament ionization component (3) through the first conductive element (44). A second conductive element (45) is provided on the side of the first conductive element (44), and is connected to an avalanche diode (46) through the second conductive element (45). The avalanche diode (46) is mounted on a substrate (41) and grounded through a grounding terminal (47) provided on the substrate (41).

6. The multi-filament ion source according to claim 1, characterized in that, The ion source chamber (1) has a set of side walls with a sandwich cavity (13) inside. The magnet assembly (5) is set in the sandwich cavity (13). The magnet assembly (5) includes several sets of magnets (51) fixed on the sandwich cavity (13). The magnets (51) are respectively set on opposite sides of the ion source chamber (1), and a magnetic field is formed in the cavity structure (11) inside the ion source chamber (1). The magnetic field constrains the distribution of plasma in the ion source chamber (1).

7. The multi-filament ion source according to claim 1, characterized in that, The extraction electrode assembly (6) is disposed at the ion extraction outlet (14) of the ion source chamber (1), and includes The extraction electrode (61) is located at the ion extraction outlet (14) on the side of the cavity structure (11) of the ion source chamber (1). By applying a negative potential relative to the plasma, an electric field is formed between the plasma and the extraction electrode (61). Under the action of the electric field, the plasma is extracted from the ion source chamber (1) through the ion extraction outlet (14). An accelerating electrode (62), located downstream of the extraction electrode (61), is used to apply a high voltage to the plasma to enhance its kinetic energy and form a high-energy directional ion beam. The suppression electrode (63), located downstream of the acceleration electrode (62), is used to block the backflow of ions reflected from the downstream target chamber into the ion source chamber (1) to avoid plasma disturbance.

8. A method for operating a multi-filament ion source as described in claims 1-7, characterized in that, Includes the following steps: S1. The working gas of the gas source is input into the main pipeline (22) through the inlet pipe (21). After the working gas enters the main pipeline (22), it flows inside the main pipeline (22) and is evenly input into the ion source chamber (1) through several gas delivery pipelines (23) evenly distributed along the main pipeline (22). S2. The input end of the power supply column (42) is connected to the power supply through the power connection terminal (43), and the output end of the power supply column (42) is electrically connected to the wiring terminal (32) of the multi-filament ionization assembly (3) through the first conductive element (44), and supplies power to the filament mounting part (34) and the filament (35) connected to the wiring terminal (32); S3. The filament (35) is located in the ion source chamber (1). After being energized, it ionizes the working gas into plasma. Under the magnetic field constraint formed by the magnet assembly (5), the plasma is evenly distributed in the ion source chamber (1). S4. The extraction electrode (61) is working. By applying a negative potential relative to the plasma, an electric field is formed between the plasma and the extraction electrode (61). Under the action of the electric field, the plasma is extracted from the ion source chamber (1) through the ion extraction outlet (14). S5. The extracted plasma, under the high voltage applied by the accelerating electrode (62), forms a high-energy directional ion beam and enters the downstream target chamber.

9. The operating method of the multi-filament ion source according to claim 8, characterized in that, Step S3 further includes: during the operation of the filament (35), if the filament (35) fails and the voltage rises, the avalanche diode (46) will be broken down and the grounding circuit will be connected.

10. The operating method of the multi-filament ion source according to claim 8, characterized in that, Step S5 further includes: a suppression electrode (63) is provided downstream of the acceleration electrode (62), which is used to block the ions reflected from the downstream target chamber from flowing back to the ion source chamber (1) to avoid plasma disturbance.

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