Glass-based circuit board and method of making the same

Abstract

This invention relates to the field of circuit board technology and discloses a glass-based circuit board and its fabrication method. The fabrication method includes: forming at least one first conductive post penetrating a glass substrate; fixing a first metal foil layer to at least one side surface of the glass substrate using a first resin film, wherein the first resin film and the first metal foil layer constitute a first composite film layer; forming a first through-hole penetrating the first composite film layer and disposed opposite to the first conductive post; forming a second conductive post filling the first through-hole; patterning the first metal foil layer to obtain a first circuit layer; and electrically connecting the first circuit layer and the first conductive post with the second conductive post. The above fabrication method can improve the connection strength between the first metal foil layer and the glass substrate, thereby improving the structural stability and electrical connection reliability of the glass-based circuit board. Furthermore, the above fabrication method easily obtains a first circuit layer with a relatively large thickness, is simple to implement, and can improve the fabrication efficiency of the glass-based circuit board.

Description

Technical Field

[0001] This invention relates to the field of circuit board technology, and more specifically to a glass-based circuit board and its preparation method. Background Technology

[0002] A circuit board, also known as a printed circuit board (PCB), is a basic electronic carrier with an insulating substrate as its base and containing circuit layers. It can support various electronic components such as resistors, capacitors, and chips. Its main function is to provide a stable mounting and fixing support for electronic components, realize the current transmission and electrical signal connection between components through pre-set metal circuits, and at the same time rely on the insulating substrate to isolate different circuits and multi-layer circuits to avoid short circuits and signal crosstalk. It is an indispensable core basic component for the stable operation of various electronic products.

[0003] Currently, most substrates use organic materials. However, due to the significant difference in thermal expansion coefficients between organic substrates and electronic components, the connection between organic-based circuit boards and electronic components is prone to breakage at high temperatures, affecting the subsequent normal operation of the electronic components. To ensure the connection stability between organic-based circuit boards and electronic components, it is often necessary to limit the density of electronic components carried by the organic-based circuit board to control the temperature of the space where the organic-based circuit board is located. Compared to organic substrates, glass substrates have a thermal expansion coefficient closer to silicon and can withstand higher temperatures. At high temperatures, glass-based circuit boards have a lower risk of connection failure with electronic components and higher connection stability. Therefore, they can support a higher density of electronic components, which is beneficial for reducing the size of glass-based circuit boards and even the entire packaging structure. The process of forming a circuit layer on the surface of a glass substrate typically involves physical vapor deposition (PVD) to deposit a metal seed layer, and electroplating to deposit metal materials on the surface of the metal seed layer.

[0004] However, due to the high chemical inertness, non-conductivity, and smooth surface of glass substrates, it is difficult for circuit layers made of metal materials to adhere stably to their surface. The circuit layers are prone to peeling off from the surface of the glass substrate, resulting in poor structural stability and electrical connection reliability of glass-based circuit boards. Summary of the Invention

[0005] This invention provides a glass-based circuit board and its manufacturing method to improve the structural stability and electrical connection reliability of the glass-based circuit board.

[0006] In a first aspect, the present invention provides a method for fabricating a glass-based circuit board, comprising: forming at least one first conductive post penetrating a glass substrate; fixing a first metal foil layer to at least one side surface of the glass substrate using a first resin film, wherein the first resin film and the first metal foil layer constitute a first composite film layer; forming a first through-hole penetrating the first composite film layer and disposed opposite to the first conductive post; forming a second conductive post filling the first through-hole; and performing patterning processing on the first metal foil layer to obtain a first circuit layer, wherein the second conductive post electrically connects the first circuit layer and the first conductive post.

[0007] The above-described preparation method uses a first resin film to fix the first metal foil layer onto the surface of the glass substrate, which improves the connection strength between the first metal foil layer and the glass substrate, reduces the risk of the final formed first circuit layer peeling off from the glass substrate surface, and improves the structural stability and electrical connection reliability of the glass-based circuit board. The thickness of the final formed first circuit layer is mainly controlled by the thickness of the first metal foil layer, making it easy to obtain a first circuit layer with a relatively large thickness. Furthermore, the preparation method is simple and can improve the fabrication efficiency of glass-based circuit boards.

[0008] In one optional embodiment, while forming the second conductive pillar, a metal layer is simultaneously deposited on the surface of the first metal foil layer facing away from the first resin film; the first metal foil layer and the metal layer are patterned to obtain the first circuit layer.

[0009] The second conductive pillar and the metal layer are deposited simultaneously, meaning the deposition process is a full-surface deposition. This eliminates the need to form a mask layer on the surface of the first metal foil layer before deposition and remove it afterward, saving fabrication steps and reducing precision requirements. The deposition process continues until the metal material fills the first via. The thickness of the first circuit layer is determined by the total thickness of the first metal foil layer and the metal layer. Since the first conductive pillar is pre-formed, the deposition process only needs to ensure the metal material fills the first via. Therefore, the filling depth of the metal material is relatively small, resulting in a smaller thickness of the metal layer obtained through simultaneous deposition. Ultimately, the thickness of the first circuit layer is primarily determined by the thickness of the first metal foil layer. This allows for a thicker first circuit layer while saving fabrication costs and shortening fabrication time. Simultaneously, the smaller filling depth makes it easier for the metal material to fill the first via, which helps control the flatness and uniformity of the metal layer, thus improving the conductivity stability of the circuit layer. Furthermore, the first conductive pillar formed by the above method has a solid structure. Compared to a hollow conductive pillar, a solid conductive pillar has lower resistance and better conductivity stability.

[0010] In one optional embodiment, the thickness of the first metal foil layer is 3 μm to 105 μm.

[0011] In one alternative embodiment, forming the second conductive pillar and the metal layer includes: depositing a seed layer on the inner wall of the first through hole and on the side of the first metal foil layer facing away from the first resin film; and depositing a metal material on the surface of the seed layer using an electroplating process until the metal material fills the first through hole.

[0012] In one optional embodiment, forming at least one first conductive pillar penetrating the glass substrate includes: forming at least one second through-hole penetrating the glass substrate; filling the second through-hole with conductive paste using a vacuum buried via process; and curing the conductive paste to form the first conductive pillar.

[0013] In one alternative embodiment, the first composite film layer is fixed to at least one side surface of the glass substrate using a vacuum pressing process.

[0014] In one alternative embodiment, the first through-hole is formed in the first composite film layer using a laser engraving process.

[0015] In one optional embodiment, the first conductive post contains one or more of the following: platinum, gold, silver, copper, aluminum, cobalt, iron, nickel, titanium, tungsten, and palladium.

[0016] In one alternative embodiment, the first metal foil layer is copper foil, aluminum foil, gold foil, silver foil, or cobalt foil.

[0017] In one optional embodiment, the second conductive post contains one or more of the following: platinum, gold, silver, copper, aluminum, cobalt, iron, nickel, titanium, tungsten, and palladium.

[0018] In an optional embodiment, the preparation method further includes a repeatable step, which includes: bonding a second metal foil layer to the side of the first circuit layer away from the glass substrate using a second resin film, wherein the second resin film and the second metal foil layer constitute a second composite film layer; forming a third through-hole penetrating the second composite film layer; forming a third conductive post filling the third through-hole; and patterning the second metal foil layer to obtain a second circuit layer; wherein the repeatable step is performed more than or equal to 1 time to obtain a plurality of stacked circuit layers, wherein adjacent circuit layers are electrically connected through the third conductive post between them.

[0019] In an optional embodiment, the preparation method further includes: forming a patterned solder resist layer on the surface of the circuit layer furthest from the glass substrate, wherein the exposed circuit layer in the hollowed-out area of ​​the solder resist layer forms pads; and subjecting the pads to anti-oxidation treatment.

[0020] Secondly, the present invention provides a glass-based circuit board, which is obtained by the preparation method provided in the first aspect. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the specific embodiments or related technologies of the present invention, the drawings used in the description of the specific embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0022] Figure 1 This is a process flow diagram of the method for preparing a glass-based circuit board according to an embodiment of the present invention; Figure 2 This is a schematic diagram of a structure forming at least one second through hole through a glass substrate according to an embodiment of the present invention; Figure 3 This is a schematic diagram of a structure forming at least one first conductive pillar penetrating a glass substrate according to an embodiment of the present invention; Figure 4 This is a schematic diagram of a structure in which a first composite film layer is formed on the surface of a glass substrate according to an embodiment of the present invention; Figure 5 This is a schematic diagram of the structure of the first through hole forming through the first composite film layer according to an embodiment of the present invention; Figure 6 This is a schematic diagram of the structure in which a second conductive pillar is formed in the first through hole according to an embodiment of the present invention; Figure 7 This is a schematic diagram of the structure in which the second conductive pillar and the metal layer are formed simultaneously according to an embodiment of the present invention; Figure 8 This is a schematic diagram of the structure of the first metal foil layer after patterning according to an embodiment of the present invention; Figure 9 This is a schematic diagram of a structure in which a second composite film layer is disposed on the surface of the first circuit layer according to an embodiment of the present invention; Figure 10 This is a schematic diagram of the structure of forming a third through-hole penetrating the second composite film layer according to an embodiment of the present invention; Figure 11 This is a schematic diagram of the structure in which a third conductive post is formed in the third through hole according to an embodiment of the present invention; Figure 12 This is a schematic diagram of the structure of the second metal foil layer patterned according to an embodiment of the present invention; Figure 13 This is a schematic diagram of a structure in which a solder resist layer is formed on the surface of the outermost circuit layer according to an embodiment of the present invention; Explanation of reference numerals in the attached figures: 1-Glass substrate; 2-First conductive post; 21-Second through hole; 3-First composite film layer; 31-First resin film; 32-First metal foil layer; 4-Second conductive post; 41-First through hole; 42-Metal layer; 5-First circuit layer; 6-Second composite film layer; 61-Second resin film; 62-Second metal foil layer; 7-Third conductive post; 71-Third through hole; 8-Second circuit layer; 9-Solder resist layer. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0024] Firstly, reference Figure 1 This invention provides a method for preparing a glass-based circuit board, comprising: Step S1, Reference Figure 3 At least one first conductive pillar 2 is formed penetrating the glass substrate 1; Step S2, Reference Figure 4 The first metal foil layer 32 is fixed to at least one side surface of the glass substrate 1 using the first resin film 31, and the first resin film 31 and the first metal foil layer 32 constitute the first composite film layer 3. Step S3, Reference Figure 5 A first through hole 41 is formed that penetrates the first composite film layer 3 and is disposed opposite to the first conductive post 2; Step S4, Reference Figure 6 This forms a second conductive pillar 4 that fills the first through hole 41; Step S5, Reference Figure 8 The first metal foil layer 32 is patterned to obtain the first circuit layer 5, and the second conductive post 4 is electrically connected to the first circuit layer 5 and the first conductive post 2.

[0025] The above preparation method uses the first resin film 31 to fix the first metal foil layer 32 to the surface of the glass substrate 1, which improves the connection strength between the first metal foil layer 32 and the glass substrate 1, reduces the risk of the first circuit layer 5 being peeled off from the surface of the glass substrate 1, and improves the structural stability and electrical connection reliability of the glass-based circuit board.

[0026] If, during the formation of the circuit layer, a PVD process is used to deposit a metal seed layer on the glass substrate surface, and an electroplating process is used to deposit metal material on the surface of the metal seed layer, then if the circuit layer is thick, the internal stress of the circuit layer will be greater, and the risk of the circuit layer peeling off from the glass substrate surface will be higher. Therefore, the above processes are not suitable for preparing circuit layers with large thicknesses. However, the preparation method provided in this embodiment results in a first circuit layer 5 whose thickness is mainly controlled by the thickness of the first metal foil layer 32, making it easy to obtain a first circuit layer 5 with a large thickness. Moreover, the preparation method is simple and can improve the preparation efficiency of glass-based circuit boards.

[0027] In this embodiment, the second conductive post 4 is disposed opposite to the first conductive post 2. Specifically, the orthographic projection of the second conductive post 4 on the surface of the glass substrate 1 completely or partially overlaps with the orthographic projection of the first conductive post 2 on the surface of the glass substrate 1. In the depth direction perpendicular to the glass substrate 1, the size of the second conductive post 4 can be greater than, equal to or smaller than the size of the first conductive post 2.

[0028] The following is combined with Figures 2-13 The fabrication method of glass-based circuit boards is described in detail.

[0029] Step S1: Form at least one first conductive post 2 penetrating the glass substrate 1.

[0030] In one optional embodiment, the formation of at least one first conductive post 2 penetrating the glass substrate 1 includes: Step S11, Reference Figure 2 At least one second through hole 21 is formed through the glass substrate 1; Step S12, Reference Figure 3 The conductive paste is filled into the second through hole 21 using a vacuum buried via process; Step S13: Solidify the conductive paste to form the first conductive pillar 2.

[0031] The first conductive post 2 formed by the above method has a solid structure. Compared with a hollow conductive post, the first conductive post 2 with a solid structure has a lower resistance and better conduction stability.

[0032] Specifically, in step S11, forming at least one second through-hole 21 penetrating the glass substrate 1 may include: using a laser to burn the glass substrate 1, creating micropores on the surface of the glass substrate 1 and modifying the area near the pores; performing wet etching on the glass substrate 1 to remove the modified area, thereby obtaining at least one second through-hole 21 penetrating the glass substrate 1. A CO2 laser can be used to burn the glass substrate, and the etching solution used for wet etching may contain at least one of HF, KOH, and NaOH.

[0033] In step S12, during the process of filling the second through hole 21 with conductive paste using the vacuum buried via process, the glass substrate 1 is placed in the chamber of the vacuum buried via equipment, and a mesh plate is placed on the surface of the glass substrate 1. The through holes of the mesh plate are arranged opposite to the second through hole 21. Under vacuum conditions, the conductive paste is filled into the second through hole 21 through the aforementioned through holes.

[0034] In step S13, the conductive paste can be cured by heating.

[0035] In one optional embodiment, the first conductive pillar contains one or more of the following: platinum, gold, silver, copper, aluminum, cobalt, iron, nickel, titanium, tungsten, and palladium. The corresponding conductive paste can be selected based on the material of the first conductive pillar.

[0036] Step S2, Reference Figure 4 The first metal foil layer 32 is fixed to at least one side surface of the glass substrate 1 using the first resin film 31, and the first resin film 31 and the first metal foil layer 32 constitute the first composite film layer 3.

[0037] In one optional embodiment, the first composite film layer 3 is fixed to at least one surface of the glass substrate 1 using a vacuum bonding process. The vacuum bonding process includes: stacking the glass substrate 1, the first resin film 31, and the first metal foil layer 32 sequentially; placing the stacked structure in a sealed cavity, evacuating the cavity to remove interlayer gas; raising the internal temperature of the cavity to cause the first resin film 31 to change from a semi-solid state to a liquid state, automatically leveling it; the temperature can be 150℃~200℃; applying pressure to the stacked structure, the pressure can be 0.1MPa~10MPa; curing the first resin film 31 to achieve permanent adhesion between the glass substrate 1, the first resin film 31, and the first metal foil layer 32; and cooling to room temperature. The vacuum bonding process avoids gas trapped between adjacent layers, which helps improve the connection strength between the glass substrate 1, the first resin film 31, and the first metal foil layer 32, thereby further improving the structural stability and electrical connection reliability of the glass-based circuit board. It should be noted that the glass surface is dense and smooth, and ordinary bonding methods can easily cause gas to be trapped at the interface between the glass substrate 1 and the first resin film 31, affecting the connection strength between the two.

[0038] In one optional embodiment, the thickness of the first metal foil layer 32 can be 3μm to 105μm, such as 3μm, 5μm, 10μm, 20μm, 40μm, 60μm, 80μm, 100μm, or 105μm. The thickness of the first metal foil layer 32 can be selected according to the thickness requirements of the first circuit layer 5.

[0039] In one alternative embodiment, the first metal foil layer 32 may be copper foil, aluminum foil, gold foil, silver foil, or cobalt foil.

[0040] The first resin film 31 can be a thermosetting resin film, and the thickness of the first resin film 31 can be 3μm~40μm, such as 3μm, 5μm, 10μm, 15μm, 20μm, 25μm, 30μm, 35μm or 40μm, etc.

[0041] Step S3, Reference Figure 5 A first through hole 41 is formed, which penetrates the first composite film layer 3 and is disposed opposite to the first conductive post 2.

[0042] In an alternative embodiment, the first through-hole 41 can be formed in the first composite film layer 3 using a laser engraving process.

[0043] Step S4, Reference Figure 6 This forms a second conductive pillar 4 that fills the first through hole 41.

[0044] In one alternative implementation, refer to Figure 7 Simultaneously with the formation of the second conductive pillar 4, a metal layer 42 is also deposited on the surface of the first metal foil layer 32 facing away from the first resin film 31. The simultaneous deposition of the second conductive pillar 4 and the metal layer 42 means that the deposition process is a full-surface deposition, eliminating the need to form a mask layer on the surface of the first metal foil layer 32 before deposition and to remove the mask layer after deposition. This saves fabrication steps and reduces the precision requirements. The deposition process continues until the first via 41 is completely filled with metal material. The thickness of the first circuit layer 5 is determined by the total thickness of the first metal foil layer 32 and the metal layer 42. Since the first conductive pillar 2 is pre-formed, the deposition process only needs to ensure that the metal material fills the first via 41. Therefore, the filling depth of the metal material is relatively small, resulting in a smaller thickness of the metal layer 42 obtained by simultaneous deposition. Ultimately, the thickness of the first circuit layer 5 is mainly based on the thickness of the first metal foil layer 32. This allows for the acquisition of a thicker first circuit layer 5 while saving on preparation costs and shortening preparation time. Simultaneously, the smaller filling depth of the metal material makes it easier to fill the first via 41, which is beneficial for controlling the flatness and uniformity of the metal layer 42, thereby improving the conductivity stability of the circuit layer. Furthermore, the first conductive pillar 2 formed by the above method has a solid structure. Compared to a hollow conductive pillar, the first conductive pillar with a solid structure has lower resistance and better conductivity stability.

[0045] In one alternative embodiment, forming the second conductive pillar 4 and the metal layer 42 includes: Step S41: Deposit a seed layer on the inner wall of the first through hole 41 and on the side of the first metal foil layer 32 facing away from the first resin film 31. Step S42: Deposit metal material on the surface of the seed layer using an electroplating process until the metal material fills the first through hole 41.

[0046] In one optional embodiment, the second conductive post 4 contains one or more of the following: platinum, gold, silver, copper, aluminum, cobalt, iron, nickel, titanium, tungsten, and palladium. Further, at least one metallic element present in the first metal foil layer 32 is present in the second conductive post 4.

[0047] In another optional embodiment, forming the second conductive post 4 includes: filling a conductive paste into a first through-hole 41 using a vacuum buried via process; and curing the conductive paste. Further, electroplating is performed at the connection between the second conductive post 4 and the first metal foil layer 32 to enhance connectivity and prevent breakage at the connection due to current surges during application.

[0048] Step S5, Reference Figure 8 The first metal foil layer 32 is patterned to obtain the first circuit layer 5, and the second conductive post 4 is electrically connected to the first circuit layer 5 and the first conductive post 2.

[0049] Patterning can be achieved using wet etching technology.

[0050] In one optional embodiment, while forming the second conductive pillar 4, a metal layer 42 is simultaneously deposited on the side of the first metal foil layer 32 facing away from the first resin film 31. Then, the first metal foil layer 32 and the metal layer 42 are patterned to obtain the first circuit layer 5.

[0051] In an optional embodiment, the preparation method further includes a repeatable step, the repeatable step comprising: refer to Figure 9 A second metal foil layer 62 is bonded to the side of the first circuit layer 5 away from the glass substrate 1 using a second resin film 61. The second resin film 61 and the second metal foil layer 62 constitute the second composite film layer 6. The specific steps can be referred to step S2, and will not be repeated here. refer to Figure 10 A third through hole 71 is formed that penetrates the second composite film layer 6. The specific steps can be referred to in step S3, and will not be repeated here. refer to Figure 11 This forms a third conductive post 7 that fills the third through hole 71. The specific steps can be found in step S4, and will not be repeated here. refer to Figure 12 The second metal foil layer 62 is patterned to obtain the second circuit layer 8. The specific steps can be referred to step S5, and will not be repeated here. The repeatable process is performed more than or equal to 1 time to obtain multiple stacked circuit layers (including a first circuit layer and a second circuit layer), and adjacent circuit layers are electrically connected by a third conductive post 7 between them.

[0052] In one alternative implementation, refer to Figure 13 The preparation method further includes: forming a patterned solder resist layer 9 on the surface of the circuit layer furthest from the glass substrate 1, wherein the circuit layer exposed in the hollow area of ​​the solder resist layer 9 forms a pad; and subjecting the pad to anti-oxidation treatment. Figure 13 The diagram shows a structure in which a solder resist layer 9 is formed on the surface of the outermost circuit layer when one side of a glass substrate contains two circuit layers. The solder resist layer 9 is used to protect the circuit layers in non-soldering areas from oxidation, solder bridging and chemical corrosion, while maintaining the insulation of the glass-based circuit board surface and assisting in component positioning; the anti-oxidation treatment of the pads can prevent the pads from oxidizing before storage, transportation and assembly, ensuring good solderability and electrical reliability.

[0053] Specifically, the solder resist layer 9 contains resin base material, filler, solvent, etc.; the resin, as the main component, can be epoxy resin, polyimide resin or acrylic resin, etc., to provide excellent heat resistance and electrical insulation properties; the filler can be silica, alumina, etc., to adjust viscosity and increase the impact resistance and wear resistance of the solder resist layer 9.

[0054] Anti-oxidation treatment of pads can be achieved by coating the pad surface with an organic solderability protectant; it can also be achieved by plating nickel on the pad surface and then depositing a gold layer through displacement reaction; or it can be achieved by depositing a silver layer on the pad surface through displacement reaction.

[0055] Secondly, refer to Figure 13 The present invention provides a glass-based circuit board, which is obtained by the preparation method provided in the first aspect.

[0056] The glass-based circuit board can be fabricated using the method provided in the first aspect. The characteristics (such as materials and thickness) and effects described for the fabrication method of the glass-based circuit board also apply to this glass-based circuit board, and will not be repeated here.

[0057] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship as shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0058] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0059] In the description of this specification, the references to terms such as "this embodiment," "an embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0060] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0061] Although embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations all fall within the scope defined by the present invention.

Claims

1. A method for fabricating a glass-based circuit board, characterized in that, include: Form at least one first conductive pillar penetrating the glass substrate; A first metal foil layer is fixed to at least one side surface of the glass substrate using a first resin film, wherein the first resin film and the first metal foil layer constitute a first composite film layer. A first through-hole is formed that penetrates the first composite film layer and is disposed opposite to the first conductive post; A second conductive pillar is formed to fill the first through hole; The first metal foil layer is patterned to obtain a first circuit layer, and the second conductive post is electrically connected to the first circuit layer and the first conductive post.

2. The preparation method according to claim 1, characterized in that, While forming the second conductive pillar, a metal layer is simultaneously deposited on the surface of the first metal foil layer away from the first resin film; the first metal foil layer and the metal layer are patterned to obtain the first circuit layer.

3. The preparation method according to claim 1, characterized in that, The thickness of the first metal foil layer is 3μm~105μm.

4. The preparation method according to claim 2, characterized in that, Forming the second conductive pillar and the metal layer includes: A seed layer is deposited on the inner wall of the first through hole and on the side of the first metal foil layer facing away from the first resin film. A metal material is deposited on the surface of the seed layer using an electroplating process until the metal material fills the first through hole.

5. The preparation method according to claim 1, characterized in that, The formation of at least one first conductive pillar penetrating the glass substrate includes: Form at least one second through-hole penetrating the glass substrate; The second through hole is filled with conductive paste using a vacuum buried via process. The conductive paste is cured to form the first conductive column.

6. The preparation method according to claim 1, characterized in that, The first composite film layer is fixed to at least one side surface of the glass substrate using a vacuum pressing process; And / or, the first through-hole is formed in the first composite film layer using a laser engraving process.

7. The preparation method according to claim 1, characterized in that, The first conductive post contains one or more of the following elements: platinum, gold, silver, copper, aluminum, cobalt, iron, nickel, titanium, tungsten, and palladium. And / or, the first metal foil layer is copper foil, aluminum foil, gold foil, silver foil or cobalt foil; And / or, the second conductive pillar contains one or more of the following elements: platinum, gold, silver, copper, aluminum, cobalt, iron, nickel, titanium, tungsten, and palladium.

8. The preparation method according to any one of claims 1-7, characterized in that, It also includes repeatable processes, which include: A second metal foil layer is bonded to the side of the first circuit layer away from the glass substrate using a second resin film, and the second resin film and the second metal foil layer constitute a second composite film layer. A third through-hole is formed that penetrates the second composite film layer; A third conductive pillar is formed to fill the third through hole; The second metal foil layer is patterned to obtain the second circuit layer; The repeatable process is performed more than or equal to 1 time to obtain multiple stacked circuit layers, and adjacent circuit layers are electrically connected through a third conductive post between them.

9. The preparation method according to any one of claims 1-7, characterized in that, Also includes: A patterned solder resist layer is formed on the surface of the circuit layer furthest from the glass substrate, and the exposed circuit layer in the cutout area of ​​the solder resist layer forms a pad. The pads are subjected to anti-oxidation treatment.

10. A glass-based circuit board, characterized in that, It is obtained by the preparation method according to any one of claims 1 to 9.

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