48V EMB system with dual redundant control and reverse connection protection

Abstract

The application discloses a 48V EMB system with double-redundancy control and anti-reverse connection protection and relates to the field of vehicle braking, which alleviates the problems that the MCU cannot be reset, the motor brake is locked and the circuit is easily burnt when the battery is reversely connected in the existing 48V EMB system under abnormal conditions. The 48V EMB system comprises an MCU module, a motor pre-driving chip, an SBC module and a battery anti-reverse connection module; the SBC module is used for reset redundancy of the MCU module and motor pre-driving chip enable redundancy; the battery anti-reverse connection module is used for detecting a power supply connection, and when the power supply is forwardly connected, the power supply is controlled to form a loop, and otherwise the power supply loop is turned off. The application is suitable for a 48V mild hybrid drive-by-wire electronic mechanical brake caliper actuator, a 48V vehicle-mounted DC / DC converter power supply input module, a 48V electronic power steering controller power supply end and a 48V battery pack high-voltage power distribution box (PDU) / safety box power supply inlet.

Description

Technical Field

[0001] This invention relates to the field of vehicle braking, and more specifically to the field of 48V electromechanical braking (EMB) systems. Background Technology

[0002] The 48V electromechanical braking (EMB) system represents a significant development direction in current brake-by-wire technology. It replaces traditional hydraulic or pneumatic brakes by using a motor-driven braking actuator. A 48V EMB system includes a power supply module, an SBC module, a motor drive module, an MCU module, a solenoid valve drive module, and a CAN communication module.

[0003] Traditional MCU reset control uses a single path: the MCU communicates with the SBC (System-Controlled Controller), and the MCU is reset via the SBC's reset pin. However, this control method is slow, and if the reset chip itself fails (e.g., the output is stuck at a high level) or the reset signal trace is interfered with and open-circuited, the MCU cannot be reset, and the system may "crash" in an abnormal state and cannot be recovered.

[0004] The motor drive module includes a motor pre-driver chip. Traditionally, the MCU is directly connected to the EN pin of the motor pre-driver chip via an I / O pin, with a high level for activation and a low level for deactivation. However, in actual automotive environments, this I / O port may fail to shut down properly due to static electricity, surges, or other reasons, causing the motor to continue rotating and potentially leading to brake lock-up, posing a single point of failure risk.

[0005] Reverse battery connection is a common human error during vehicle repair. In traditional solutions, GND is directly connected to the external GND. When the battery is reversed, the excessive reverse current can burn out the circuit. Typically, a power diode is connected in series between GND and the external GND, but this leads to significant heat generation and efficiency loss, and also requires an additional heatsink, greatly increasing cost and size.

[0006] In summary, the existing 48V EMB system has problems such as the MCU failing to reset under abnormal conditions, motor brake locking, and the circuit easily burning out when the battery is reversed. Summary of the Invention

[0007] This invention alleviates the problems of existing 48V EMB systems, such as MCU failure to reset under abnormal conditions, motor brake lock-up, and circuit burnout when the battery is reverse-connected. This invention provides the following solution: A 48V EMB system with dual redundancy control and reverse connection protection, the system including an MCU module, a motor pre-drive chip, an SBC module and a battery reverse connection protection module; The SBC module is used for reset redundancy of the MCU module and enable redundancy of the motor pre-drive chip. The battery reverse connection protection module is used to detect the power connection. When the power is connected in the forward direction, it controls the power to form a circuit; otherwise, it shuts down the power circuit.

[0008] Furthermore, in one embodiment of the present invention, the SBC module is used for a method of reset redundancy of the MCU module: If the RST pin of the SBC module is stuck at a high level, or if there is an abnormality in the communication between the MCU module and the SBC module, the MCU module will use the FCCU signal to pull the WLD2 pin of the SBC module low, thereby resetting the MCU module. Otherwise, the MCU module sends a reset command to the SBC module via SPI; upon receiving the reset command, the SBC module pulls the RST pin low to reset the MCU module.

[0009] Furthermore, in one embodiment of the present invention, the method by which the SBC module enables redundancy for the motor pre-drive chip is as follows: If the GPIO signal of the MCU module is stuck at a high level, the SBC module pulls the WLD1 pin low through the FCCU signal, thereby turning off the motor pre-drive chip. Otherwise, the MCU module pulls the GPIO signal low to shut down the motor pre-drive chip.

[0010] Furthermore, in one embodiment of the present invention, the circuit implementing the reset redundancy method of the MCU module is a reset redundancy circuit, wherein the reset redundancy circuit is: The 3.3V power supply terminal is simultaneously connected to resistors R1, R2, and R3, one end of capacitor C1, and the emitter of transistor Q1; The other end of resistor R1 is connected to the WLD2 pin and the anode of diode D1. The cathode of diode D1 is connected to the other end of resistor R2 and one end of resistor R4. The other end of resistor R4 is connected to the other end of resistor R3, the other end of capacitor C1, and the base of transistor Q1. The collector (C) of transistor Q1 is connected to the base (B) of transistor Q2 and one end of resistor R5. The other end of resistor R5 is connected to GND and the emitter (E) of transistor Q2. The collector of transistor Q2 is connected to one end of resistors R6 and R7 and the reset pin of the MCU module. The other end of resistor R6 is connected to the 3.3V power supply, and the other end of resistor R7 is connected to the RST pin.

[0011] Furthermore, in one embodiment of the present invention, the circuit for enabling redundancy of the motor pre-drive chip using the SBC module is a motor chip enable redundancy control circuit, wherein the motor chip enable redundancy control circuit is: The 3.3V power supply terminal is connected to one end of both resistor R11 and resistor R12; The other end of resistor R11 is connected to both the WLD1 pin and the anode of diode D11. The cathode of diode D11 is connected to both the other end of resistor R12 and the base of transistor Q11. The emitter of transistor Q11 is connected to GND, and the collector of transistor Q11 is connected to one end of resistor R14. The other end of resistor R14 is connected to one end of resistor R13 and the motor pre-drive chip; the other end of resistor R13 is connected to the GPIO signal.

[0012] Furthermore, in one embodiment of the present invention, the battery reverse connection protection module is: The 12V power supply is connected to one end of resistor R21, and the other end of resistor R12 is connected to both the gate of MOSFET Q21 and one end of resistor R22. The other end of resistor R22 is connected to the source (S) and ground (GND) of MOSFET Q21 and one end of capacitor C21. The drain of MOSFET Q21 is connected to both external GND and one end of resistor R23; the other end of resistor R23 is connected to the other end of capacitor C21.

[0013] The 48V EMB system with dual redundancy control and reverse connection protection described in this invention effectively alleviates the problems of existing 48V EMB systems, such as MCU failure to reset under abnormal conditions, motor brake lock-up, and easy circuit burnout when the battery is reverse connected. Specific beneficial effects include: 1. The 48V EMB system described in this invention differs from the technical concept of existing technologies, which conventionally separate reset and output control. Existing technologies assume that reset is the responsibility of the SBC (Signal Control Block) and enable is the responsibility of the MCU (Microcontroller Unit). The result is that if the MCU fails, the enable becomes uncontrollable, causing a dangerous "vacuum period" for the motor.

[0014] This invention extends "passive protection" to "active shutdown" by improving the MCU module, motor pre-drive chip, and battery reverse connection protection module. When a fault occurs, the SBC resets the MCU, but even if the MCU is not reset, the SBC actively disables the pre-drive chip to prevent the motor from seizing or becoming uncontrollable. This provides an additional layer of protection compared to simple reset redundancy. The improved battery reverse connection protection module is fundamental to the MCU module and motor pre-drive chip, providing a reliable zero potential for redundant control. If the power system burns out due to reverse connection or logic disorder caused by ground potential fluctuations, any redundant control signals will fail.

[0015] The entire improvement is centered around the FCCU fault collection and control unit, with power safety as its underlying foundation, jointly constructing a multi-layered braking control system with failure response capabilities. It resolves the high safety risk of actuator runaway during MCU failure (reset waiting period or inability to reset), achieving an overall improvement in the safety and environmental adaptability of the 48V EMB system.

[0016] 2. The 48V EMB system described in this invention solves the problem of reset failure caused by a single path in MCU reset control. By controlling two independent signals (RST signal and FCCU signal), the MCU can be reliably reset when either signal sends a reset pulse, and a fault in one signal will not prevent the other signal from functioning. This increases the redundancy of the MCU reset function and ensures system stability.

[0017] 3. The 48V EMB system described in this invention solves the problems of lack of hardware redundancy and high risk of single-point failure in the enable control of the pre-driver chip. By setting two independent signals (MCU control signal and FCCU signal) to jointly control the EN pin of the pre-driver chip, the pre-driver chip will be turned off when either of them meets the shutdown condition, thereby avoiding brake drive runaway caused by single-point failure and reducing the risk of failure.

[0018] 4. The 48V EMB system described in this invention solves the problem of GND being directly connected to the external GND and burning out due to reverse power connection, as well as the high power consumption and high heat generation caused by the series diode for reverse connection protection. This invention connects a MOSFET in series between GND and the external GND. In forward connection, the body diode of the MOSFET conducts first when the power is forward connected, and then the gate receives a driving voltage and is fully turned on, with an on-resistance of only 1~10mR. At this time, the power consumption is much lower than that of a diode. In reverse connection, the body diode of the MOSFET is in a reverse cutoff state, the gate voltage is 0, and the MOSFET is always off. This solution combines the advantages of extremely low conduction loss (significantly improved efficiency, no need for an additional heatsink) and reliable reverse connection protection, overcoming the high heat generation and large size defects of traditional diode solutions.

[0019] The 48V EMB system described in this invention is applicable to 48V mild hybrid electric vehicle (MHEV) drive-by-wire electromechanical brake (EMB) caliper actuators, 48V on-board DC / DC converter (48V→12V) power input module, 48V electronic power steering (EPS) controller power supply terminal and 48V battery pack high voltage distribution box (PDU) / fuse box power inlet. Attached Figure Description

[0020] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein: Figure 1This is a block diagram of the 48V EMB system described in Embodiment 1; Figure 2 This is the reset redundancy circuit diagram described in Implementation Method 4; Figure 3 This is the circuit diagram of the motor chip enable redundancy control described in Implementation Method 5; Figure 4 This is a diagram of the battery reverse connection protection module described in Implementation Method Six.

[0021] The definitions and functions of the key pins in the attached diagram are shown in Table 1: Table 1 Detailed Implementation

[0022] Various embodiments of the present invention will now be clearly and completely described with reference to the accompanying drawings. The embodiments described with reference to the drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0023] Implementation Method 1: This implementation method describes a 48V EMB system with dual redundant control and reverse connection protection, such as... Figure 1 As shown, the system includes an MCU module, a motor pre-drive chip, an SBC module, and a battery reverse connection protection module; The SBC module is used for reset redundancy of the MCU module and enable redundancy of the motor pre-drive chip. The battery reverse connection protection module is used to detect the power connection. When the power is connected in the forward direction, it controls the power to form a circuit; otherwise, it shuts down the power circuit.

[0024] Implementation Method Two: This implementation method further defines the EMB system described in Implementation Method One. In this implementation method, the SBC module is used for the reset redundancy of the MCU module. If the RST pin of the SBC module is stuck at a high level, or if there is an abnormality in the communication between the MCU module and the SBC module, the MCU module will use the FCCU signal to pull the WLD2 pin of the SBC module low, thereby resetting the MCU module. Otherwise, the MCU module sends a reset command to the SBC module via SPI; upon receiving the reset command, the SBC module pulls the RST pin low to reset the MCU module.

[0025] This embodiment further defines the EMB system and explains the reset redundancy of the SBC module for the MCU module. In the prior art, the problem of single-path reset failure is often solved by directly connecting the WLD2 pin and the RST pin. However, this direct connection method will cause the two pins to be physically short-circuited when one source outputs a high level (releases the reset) and the other source outputs a low level (initiates the reset), resulting in a large current flowing through and potentially permanently burning out the initiating reset pin.

[0026] In this implementation, the two signals (RST and FCCU) are independent. The FCCU signal reset is achieved by pulling down the WLD2 pin of the SBC and adding an OR gate (simulated using a transistor) between the WLD2 and RST output signals, instead of a direct connection. This ensures that a fault in either path will not prevent the other from functioning. Therefore, a low output from either circuit will reset the MCU, avoiding the loss of reset functionality due to a single-path failure.

[0027] Implementation Method 3: This implementation method further defines the EMB system described in Implementation Method 1. In this implementation method, the SBC module is used to enable redundancy for the motor pre-drive chip as follows: If the GPIO signal of the MCU module is stuck at a high level, the SBC module pulls the WLD1 pin low through the FCCU signal, thereby turning off the motor pre-drive chip. Otherwise, the MCU module pulls the GPIO signal low to shut down the motor pre-drive chip.

[0028] This implementation further defines the EMB system and explains the use of the SBC module to enable redundancy for the motor pre-drive chip. If directly connected, when one source outputs a high level (enabled) and the other source outputs a low level (disabled), the two pins will physically short-circuit, resulting in a large current flowing through and potentially permanently burning out the disabled pin.

[0029] In this implementation, disabling the FCCU signal in the pre-driver chip involves pulling down the WLD1 pin of the SBC and adding an OR gate circuit (simulated using a transistor) between the WLD1 output signal and the MCU output signal, instead of making a direct connection. In this case, a fault in either path will not prevent the other path from functioning.

[0030] Implementation Method Four: This implementation method further defines the EMB system described in Implementation Method Two. In this implementation method, as follows... Figure 2 As shown, the circuit implementing the reset redundancy method of the MCU module is a reset redundancy circuit, which is as follows: The 3.3V power supply terminal is simultaneously connected to resistors R1, R2, and R3, one end of capacitor C1, and the emitter of transistor Q1; The other end of resistor R1 is connected to the WLD2 pin and the anode of diode D1. The cathode of diode D1 is connected to the other end of resistor R2 and one end of resistor R4. The other end of resistor R4 is connected to the other end of resistor R3, the other end of capacitor C1, and the base of transistor Q1. The collector (C) of transistor Q1 is connected to the base (B) of transistor Q2 and one end of resistor R5. The other end of resistor R5 is connected to GND and the emitter (E) of transistor Q2. The collector of transistor Q2 is connected to one end of resistors R6 and R7 and the reset pin of the MCU module. The other end of resistor R6 is connected to the 3.3V power supply, and the other end of resistor R7 is connected to the RST pin.

[0031] In this embodiment, the reset pin of the MCU module is RESET.

[0032] In this embodiment, resistors R1, R2, R5, and R6 are pull-up resistors.

[0033] In this embodiment, resistor R3 is used to reliably cut off the transistor when it outputs a low level, preventing false turn-on.

[0034] In this embodiment, resistor R4 is used to prevent circuit false triggering and improve reliability.

[0035] Diode D1 is used to prevent reverse polarity.

[0036] Capacitor C1 is used to implement power-on delay reset, ensuring that the reset signal is released only after the power supply is stable, and also has a filtering function.

[0037] Resistor R7 is used for connection.

[0038] Transistor Q1 is a PNP transistor used as a switch.

[0039] Transistor Q2 is an NPN transistor used as a switch.

[0040] In this embodiment, the WLD2 circuit is used for MCU reset. During normal operation, the MCU reset signal is pulled high by SBC, and the WLD2 signal is also high. Transistors Q1 and Q2 are both in the off state, and the MCU will not be reset.

[0041] When the MCU receives an error signal, it sends a reset command to the SBC via SPI. The SBC then pulls the RST pin low, resetting the MCU. Simultaneously, the MCU sends an error signal to the SBC via the FCCU. The SBC then pulls the WLD2 signal low, turning on transistors Q1 and Q2, and the reset signal is pulled low to ground.

[0042] If the SBC RST pin is stuck at a high level, or if there is an abnormality in the communication between the MCU and the SBC, the MCU can be reset by pulling the WLD2 signal low using the FCCU signal. This fault will be reported during the next self-test.

[0043] This embodiment further defines the EMB system and describes the WLD2 circuit. Under normal operating conditions, WLD2 is at a high level, and there is no potential difference between the base and emitter of Q1, so it is not conducting. When a fault occurs, WLD2 is at a low level, creating a potential difference between the base and emitter of Q1, causing Q1 to conduct. Because current flows through the base of Q2, Q2 conducts, pulling the MCU reset pin low.

[0044] Implementation Method Five: This implementation method further defines the EMB system described in Implementation Method Three. In this implementation method, as follows... Figure 3 As shown, the circuit that enables redundancy for the motor pre-drive chip in the SBC module is the motor chip redundancy control circuit, which is as follows: The 3.3V power supply terminal is connected to one end of both resistor R11 and resistor R12; The other end of resistor R11 is connected to both the WLD1 pin and the anode of diode D11. The cathode of diode D11 is connected to both the other end of resistor R12 and the base of transistor Q11. The emitter of transistor Q11 is connected to GND, and the collector of transistor Q11 is connected to one end of resistor R14. The other end of resistor R14 is connected to one end of resistor R13 and the motor pre-drive chip; the other end of resistor R13 is connected to the GPIO signal.

[0045] In this embodiment, resistors R11, R12, and R13 are pull-up resistors, and transistor Q11 is an NPN transistor.

[0046] In this embodiment, resistor R14 serves as a connection to suppress signal ringing and overshoot.

[0047] Diode D11 is used for reverse protection.

[0048] Q11 is an NPN transistor used as a switch.

[0049] In this embodiment, WLD1 is used to enable redundancy for the motor pre-drive chip. During normal operation, the EN pin of the power pre-drive chip is pulled high by the MCU, at which time the WLD1 signal is low and the Q11 transistor is turned off.

[0050] When the MCU receives an error signal, it immediately pulls the IO output low, making the EN signal low and shutting down the motor pre-drive chip. Simultaneously, the MCU transmits the error signal to the SBC via the FCCU. The SBC then pulls the WLD1 signal high, turns on transistor Q11, and pulls the EN signal low to ground.

[0051] If the MCU GPIO signal is stuck at a high level at this time, the WLD1 signal can be pulled high by the FCCU signal to shut down the motor pre-drive chip. This fault will be reported during the next self-test.

[0052] This embodiment further defines the EMB system and describes the circuit of WLD1. WLD1 is EN redundantly turned off. Under normal operating conditions, WLD1 is at a low level, and there is no current at the base of Q11, so it cannot conduct. When a fault occurs, WLD1 is at a high level, and current flows through the base of Q11, so Q11 conducts, and the EN pin of the motor pre-drive chip is pulled low.

[0053] Implementation Method Six: This implementation method further defines the EMB system described in Implementation Method One. In this implementation method, as... Figure 4 As shown, the battery reverse connection protection module is: The 12V power supply is connected to one end of resistor R21, and the other end of resistor R12 is connected to both the gate of MOSFET Q21 and one end of resistor R22. The other end of resistor R22 is connected to the source (S) and ground (GND) of MOSFET Q21 and one end of capacitor C21. The drain of MOSFET Q21 is connected to both external GND and one end of resistor R23; the other end of resistor R23 is connected to the other end of capacitor C21.

[0054] In this embodiment, resistor R21 is a gate resistor used for current limiting, controlling the switching response speed, and preventing drive voltage oscillations caused by parasitic inductance from burning out the MOSFET. Without a gate resistor, or with an excessively high resistance value, the MOSFET's turn-on speed would be too fast, potentially damaging surrounding devices under high voltage conditions.

[0055] The resistance of resistor R21 is 1kR. If the gate resistance is too high, it will slow down the switching speed. If the voltage is too high, the power consumption will also be too high, resulting in severe heat generation. This is because the MOSFET is normally open during operation.

[0056] In this embodiment, resistor R22 is a pull-down resistor, used to generate a stable interstage voltage during the turn-on process of the MOSFET, ensuring stable conduction.

[0057] The resistance of resistor R22 must be at least 100 times greater than that of gate resistor R21, otherwise it may cause voltage drop.

[0058] In this embodiment, R23 and C21 form an RC absorption circuit, which is used to absorb the peak energy generated when the switching state changes.

[0059] In this embodiment, the gate power supply of MOSFET Q21 is a DC-DC output of 12V.

[0060] In this embodiment, the battery reverse connection protection circuit is used to prevent reverse connection of the battery. When the battery is connected in the correct orientation, at the moment of power-on, the current flows through GND and then through the body diode of Q21 to the external ground, forming a power supply loop. At this time, GND has a voltage of 0.7V, and the 12V power-on is successful (12V is the internal power). There is a voltage difference at VGS, and the MOSFET Q21 turns on, allowing power to flow to the external ground through the MOSFET. At this point, the entire system is successfully powered on, the MOSFET is fully turned on, and the power loss is negligible.

[0061] When the battery is reverse-connected, the external GND is the positive terminal of the battery. Because the body diode of the Q21 MOSFET is reversed, current cannot flow into GND to form a circuit. There is no 12V power, the MOSFET is turned off, and no current flows into the system.

[0062] This embodiment further defines the EMB system and describes the reverse connection protection circuit for the battery. In this method, GND is the internal ground and external GND is the external ground. Under normal circumstances, the current flows through GND and then through the body diode of Q21 to the external ground. At this time, the power supply loop is formed, 12V is powered (12V is the internal power), the MOSFET Q21 is turned on, and the power flows to the external ground through the MOSFET, reducing power consumption.

[0063] When the battery is reversed, the current cannot flow into GND to form a circuit because the body diode of the Q21 MOSFET is reversed. As a result, there is no 12V power, the MOSFET is turned off, and no current flows into the system.

[0064] In this embodiment, in the prior art, the gate-source voltage of the power MOSFET can withstand ±20V; higher voltages may burn it out. Therefore, diodes are generally used for reverse protection in 48V power supplies. Furthermore, the PCB board has a large number of electrolytic capacitors. When the battery is connected in the correct direction, the system charges these large capacitors, resulting in an instantaneous surge current of tens or even hundreds of amperes. This surge current of hundreds of amperes will directly and uncontrollably rush towards the subsequent large capacitors. Although this huge current spike is short-lived, it causes severe overheating of the diode, and repeated power-on surges over a long period can cause the diode to short-circuit, losing its reverse protection effect. This embodiment uses a MOSFET as the reverse protection device, and it is not directly connected to the power supply. Instead, the system is first turned on through a body diode for freewheeling, thus forming a power supply loop. Then, a 12V voltage is output through a DC-DC converter to charge the MOSFET gate, making the MOSFET fully conductive.

Claims

1. A 48V EMB system with dual redundant control and reverse connection protection, characterized in that, The system includes an MCU module, a motor pre-drive chip, an SBC module, and a battery reverse connection protection module; The SBC module is used for reset redundancy of the MCU module and enable redundancy of the motor pre-drive chip. The battery reverse connection protection module is used to detect the power connection. When the power is connected in the forward direction, it controls the power to form a circuit; otherwise, it shuts down the power circuit.

2. The 48V EMB system according to claim 1, characterized in that, The SBC module is used for reset redundancy in the MCU module. If the RST pin of the SBC module is stuck at a high level, or if there is an abnormality in the communication between the MCU module and the SBC module, the MCU module will use the FCCU signal to pull the WLD2 pin of the SBC module low, thereby resetting the MCU module. Otherwise, the MCU module sends a reset command to the SBC module via SPI; upon receiving the reset command, the SBC module pulls the RST pin low to reset the MCU module.

3. The 48V EMB system according to claim 1, characterized in that, The method by which the SBC module enables redundancy for the motor pre-drive chip is as follows: If the GPIO signal of the MCU module is stuck at a high level, the SBC module pulls the WLD1 pin low through the FCCU signal, thereby turning off the motor pre-drive chip. Otherwise, the MCU module pulls the GPIO signal low to shut down the motor pre-drive chip.

4. The 48V EMB system according to claim 2, characterized in that, The circuit that implements the reset redundancy method for the MCU module is a reset redundancy circuit, which is as follows: The 3.3V power supply terminal is simultaneously connected to resistors R1, R2, and R3, one end of capacitor C1, and the emitter of transistor Q1; The other end of resistor R1 is connected to the WLD2 pin and the anode of diode D1. The cathode of diode D1 is connected to the other end of resistor R2 and one end of resistor R4. The other end of resistor R4 is connected to the other end of resistor R3, the other end of capacitor C1, and the base of transistor Q1. The collector (C) of transistor Q1 is connected to the base (B) of transistor Q2 and one end of resistor R5. The other end of resistor R5 is connected to GND and the emitter (E) of transistor Q2. The collector of transistor Q2 is connected to one end of resistors R6 and R7 and the reset pin of the MCU module. The other end of resistor R6 is connected to the 3.3V power supply, and the other end of resistor R7 is connected to the RST pin.

5. The 48V EMB system according to claim 3, characterized in that, The circuit that enables redundancy for the motor pre-drive chip in the SBC module is the motor chip redundancy control circuit, which is as follows: The 3.3V power supply terminal is connected to one end of both resistor R11 and resistor R12; The other end of resistor R11 is connected to both the WLD1 pin and the anode of diode D11. The cathode of diode D11 is connected to both the other end of resistor R12 and the base of transistor Q11. The emitter of transistor Q11 is connected to GND, and the collector of transistor Q11 is connected to one end of resistor R14. The other end of resistor R14 is connected to one end of resistor R13 and the motor pre-drive chip; the other end of resistor R13 is connected to the GPIO signal.

6. The 48V EMB system according to claim 1, characterized in that, The battery reverse connection protection module is: The 12V power supply is connected to one end of resistor R21, and the other end of resistor R12 is connected to both the gate of MOSFET Q21 and one end of resistor R22. The other end of resistor R22 is connected to the source (S) and ground (GND) of MOSFET Q21 and one end of capacitor C21. The drain of MOSFET Q21 is connected to both external GND and one end of resistor R23; the other end of resistor R23 is connected to the other end of capacitor C21.

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