Novel structure capable of improving bending of memory particles

Abstract

The utility model provides a novel structure capable of improving bending of memory particles. The novel structure comprises a chip layer, a substrate layer and a solder ball layer which are sequentially arranged from top to bottom, the substrate layer comprises a chip pasting end, a substrate main body end and a solder ball pasting end which are sequentially arranged from top to bottom; cCL laminated boards and glass fibers are arranged in the base board main body end, the glass fibers are arranged in the CCL laminated boards in a wave-shaped embedded mode, and the thickness of each single-layer CCL laminated board is 43 micrometers. On the basis of a chip layer, a substrate layer and a solder ball layer structure of a conventional memory, the substrate main body adopts a composite structure of the CCL laminated board and the glass fibers, and the thickness of the CCL laminated board reaches 43 microns, so that the effect of improving the overall rigidity of the substrate can be achieved, the shrinkage degree of the substrate is reduced, the bending of the substrate is effectively controlled, and the service life of the substrate is prolonged. And the mass production level and the product evaluation result are met, and the target of on-time mass production is achieved.

Description

Technical Field

[0001] The utility model relates to the field of advanced semiconductor packaging, in particular to the technical field of Flip Chip products, and specifically is a new structure capable of improving the bending of memory particles. Background Art

[0002] During the development phase of the Flip Chip product, it was discovered that the memory particles had a serious bending problem after cooling, with an average bending height of more than 0.15mm (the industry benchmark Max is 0.1mm, and the mass production level of other products has an average of 0.05mm). Alarms frequently occurred during the cutting process equipment operation, preventing normal operation and affecting production plans.

[0003] Through many tests and analyses, it was found that since the chip size ratio per unit area is relatively small, due to the similarity of the overall production process, and the known shrinkage of injection molding materials during processing, and the insufficient rigidity of the conventionally used substrates compared to the bending resistance of the injection molding materials, defective products that cannot resist the bending force are generated, the products are bent, and cannot meet the normal mass production requirements, which also leads to the failure to achieve the goal of mass production on time. Summary of the invention

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a new structure capable of improving the bending of memory particles, so as to solve the difficulties of the prior art.

[0005] To achieve the above-mentioned purpose and other related purposes, the utility model provides a new structure capable of improving the bending of memory particles, including a chip layer 1, a substrate layer 2 and a solder ball layer 3 arranged in sequence from top to bottom;

[0006] The substrate layer 2 includes a chip attaching end 21, a substrate main body end 22 and a solder ball attaching end 23 which are arranged in sequence from top to bottom;

[0007] The substrate main body end 22 includes a CCL laminate 221 and glass fibers 222. The glass fibers 222 are arranged in the CCL laminate 221 in a wave-shaped manner. The thickness of a single layer of the CCL laminate 221 is 43 um.

[0008] According to a preferred embodiment, the CCL laminate 221 has a two-layer or three-layer structure. According to a preferred embodiment, the CCL laminate 221 has a two-layer structure.

[0009] According to a preferred embodiment, the chip layer 1 includes a chip 11 and an injection molding layer 12 for covering the chip 11; the chip 11 occupies 85% of the area of ​​the injection molding layer 12.

[0010] According to a preferred solution, the chip 11 is located in the exact center of the injection molding layer 12 .

[0011] According to a preferred embodiment, the deformation of the substrate layer 2 is between 0.0439 mm and 0.0559 mm. According to a preferred embodiment, the CTE value of the substrate layer 2 is 12 ppm / °C.

[0012] According to a preferred embodiment, a substrate circuit 24 runs through the chip attachment end 21, the substrate body end 22 and the solder ball attachment end 23.

[0013] According to a preferred solution, the substrate circuit 24 is made of a copper layer.

[0014] According to a preferred embodiment, the outer side of the substrate circuit 24 is encapsulated by an ink protection layer 25 .

[0015] According to a preferred solution, the pins of the chip 11 pass through the injection molding layer 12 and are connected to the substrate circuit 24 .

[0016] Based on the chip layer, substrate layer and solder ball layer structure of conventional memory, the utility model adopts a composite structure of CCL laminate and glass fiber for the substrate body, and the thickness of the CCL laminate reaches 43um, which can achieve the effect of improving the overall rigidity of the substrate, reduce the shrinkage of the substrate, effectively control the bending of the substrate, and meet the mass production level and product evaluation results, and achieve the goal of on-time mass production.

[0017] The best embodiment of the present invention will be described in more detail below in conjunction with the accompanying drawings so that the features and advantages of the present invention can be easily understood. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] FIG1 is a schematic diagram showing the structure of the present utility model;

[0019] FIG2 is an enlarged schematic diagram showing the structure of the substrate layer in the present invention;

[0020] 1. Chip layer, 11. Chip, 12. Injection molding layer;

[0021] 2. Substrate layer, 21. Chip end, 22. Substrate body end, 221. CCL laminate, 222. Glass fiber, 23. Solder ball end, 24. Substrate circuit, 25. Ink protection layer;

[0022] 3. Solder ball layer. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solution and advantages of the technical solution of the utility model clearer, the technical solution of the embodiment of the utility model will be clearly and completely described in conjunction with the drawings of the specific embodiments of the utility model. The same figure marks in the drawings represent the same parts. It should be noted that the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the described embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0024] Compared with the embodiments shown in the drawings, feasible implementations within the scope of protection of the present invention may have fewer components, other components not shown in the drawings, different components, differently arranged components, or differently connected components, etc. In addition, two or more components in the drawings may be implemented in a single component, or a single component shown in the drawings may be implemented as multiple separate components.

[0025] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by persons with ordinary skills in the field to which the utility model belongs. The words "first", "second" and similar words used in the specification and claims of the utility model patent application do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "one" do not necessarily indicate quantity restrictions. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right", etc. are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0026] The utility model proposes a new structure capable of improving the bending of memory particles, which is used in the chip product production process. The utility model does not limit the types of substrate circuits and glass fibers, but the new substrate structure capable of improving the bending of memory particles is particularly suitable for CP 24G DDR5 FC106 products.

[0027] In general, the novel structure proposed by the present invention that can improve the bending of memory particles mainly includes a chip layer 1, a substrate layer 2 and a solder ball layer 3. Among them, see FIG. 1 , which shows the arrangement relationship of the chip layer 1, the substrate layer 2 and the solder ball layer 3.

[0028] In order to achieve the purpose of improving the bending of memory particles, the problem that the memory particles have a large bending problem after cooling is solved in the development stage of the Flip Chip product in the background technology, and the bending height reaches an average of more than 0.15mm (the industry benchmark Max 0.1mm, and the average mass production level of other products is 0.05mm). The alarm frequently occurs during the operation of the cutting process equipment, and the normal operation cannot be performed, affecting the production plan; through multiple tests and analyses, the product is small in size ratio within the unit area of ​​the chip, but due to the similarity of the overall production process, and in the case of shrinkage during the known injection molding material processing, and the rigidity of the conventionally used substrate is insufficient relative to the bending resistance of the injection molding material, defective products that cannot resist the bending force are generated, the product is bent, and the normal product mass production requirements cannot be met, which also leads to the problem that the goal of mass production cannot be achieved on time. For this reason, in the technical solution provided in this embodiment, on the basis of the chip layer 1, substrate layer 2 and solder ball layer 3 structure of the conventional memory, a composite structure of CCL laminate 221 and glass fiber 222 is adopted for the substrate body, and the CCL laminate 221 The thickness reaches 43um, which can achieve the effect of improving the overall rigidity of the substrate, reducing the shrinkage of the substrate, effectively controlling the bending of the substrate, and meeting the mass production level and product evaluation results to achieve the goal of on-time mass production.

[0029] Specifically, as shown in FIG. 1 , a chip layer 1 , a substrate layer 2 and a solder ball layer 3 are sequentially arranged from top to bottom. The chip layer 1 includes a chip 11 and an injection molding layer 12 for encapsulating the chip 11. The substrate layer 2 includes a chip attaching terminal 21 , a substrate main body terminal 22 and a solder ball attaching terminal 23 sequentially arranged from top to bottom. In terms of circuit structure, the pins of the chip 11 pass through the injection molding layer 12 and are electrically connected to a substrate circuit 24 in the substrate layer 2. A substrate circuit 24 runs through the chip attaching terminal 21 , the substrate main body terminal 22 and the solder ball attaching terminal 23. Since the substrate circuit 24 adopts a copper layer, it can be encapsulated and protected by an outer ink protective layer 25.

[0030] It should be specifically explained that, in order to improve the shrinkage resistance of the overall memory structure, on the one hand, the substrate main body end 22 provided in this embodiment adopts a composite structure of a CCL laminate 221 and a glass fiber 222. Considering the increase in the bonding force between the two, the glass fiber 222 is arranged in the CCL laminate 221 through a wave-shaped embedding, which can effectively resist external mechanical stress and thermal stress, making the overall structure more stable and less prone to deformation;

[0031] On the other hand, it is found that the conventional imported substrate is greatly deformed by temperature, that is, the shrinkage rate is large, which causes the bending degree of the unit structure to exceed the standard value, and the standard value is less than 0.1mm. Therefore, for the single-layer CCL laminate 221, a material with a thickness of 43um is used, and according to the conventional memory size, a two-layer structure is sufficient, which can achieve the effect of its deformation lower than the standard value. While considering the cost, it also reduces the difficulty of production; through data detection, the CTE value of the substrate layer 2 of the structure described above can reach 12mm / ℃.

[0032] On this basis, taking into account the thermal expansion and contraction of the injection molding layer 12, the overall memory structure is made to reduce the degree of bending deformation. Preferably, the chip 11 is set to a structure that occupies 85% of the area of ​​the injection molding layer 12, and the chip 11 is located in the center of the injection molding layer 12. According to the improvement of the above structure, after performing bending measurement and detection, it is found that the deformation of the substrate layer 2 can be controlled between 0.0439mm-0.0559mm.

[0033] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed in the present invention shall still be covered by the claims of the present invention.

Claims

1. A new structure capable of improving the bending of memory particles, characterized in that: It comprises a chip layer (1), a substrate layer (2) and a solder ball layer (3) which are arranged in sequence from top to bottom; The substrate layer (2) comprises a chip attaching end (21), a substrate body end (22) and a solder ball attaching end (23) which are arranged in sequence from top to bottom; The substrate main body end (22) comprises a CCL laminate (221) and glass fibers (222), wherein the glass fibers (222) are arranged in the CCL laminate (221) by wave-shaped embedding, and the thickness of a single layer of the CCL laminate (221) is 43 um.

2. The novel structure capable of improving the bending of memory particles according to claim 1 is characterized in that: The CCL laminate (221) adopts a two-layer or three-layer structure.

3. The novel structure capable of improving the bending of memory particles according to claim 2 is characterized in that: The chip layer (1) comprises a chip (11) and an injection molding layer (12) for covering the chip (11); the chip (11) occupies 85% of the area of ​​the injection molding layer (12).

4. The novel structure capable of improving the bending of memory particles according to claim 3 is characterized in that: The deformation amount of the substrate layer (2) is between 0.0439 mm and 0.0559 mm.

5. The novel structure capable of improving the bending of memory particles according to claim 4 is characterized in that: The CTE value of the substrate layer (2) is 12 mm / °C.

6. The novel structure capable of improving the bending of memory particles according to claim 5 is characterized in that: A substrate circuit (24) runs through the chip attachment end (21), the substrate body end (22) and the solder ball attachment end (23), and the outer side of the substrate circuit (24) is encapsulated by an ink protection layer (25).

7. The novel structure capable of improving the bending of memory particles according to claim 6 is characterized in that: The pins of the chip (11) pass through the injection molding layer (12) and are connected to the substrate circuit (24).

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