Array substrate and display device
By using amorphous silicon thin-film transistors with low electron mobility in the shift register, the problem of transistor burnout under high drive voltage was solved, and the high voltage resistance of the gate drive circuit was improved.
CN224553998UActive Publication Date: 2026-07-24BEIJING BOE DISPLAY TECH CO LTD +1
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- BEIJING BOE DISPLAY TECH CO LTD
- Filing Date
- 2025-07-28
- Publication Date
- 2026-07-24
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Figure CN224553998U_ABST
Abstract
The present disclosure provides an array substrate and a display device. The array substrate includes a substrate layer and a gate drive circuit disposed at a peripheral region of the substrate layer. The gate drive circuit includes a plurality of cascaded shift registers. The shift register includes an input circuit, an output circuit, a pull-down node control circuit, and a noise reduction circuit. At least one transistor included in the input circuit, the output circuit, and the noise reduction circuit is a first type of transistor. The pull-down node control circuit includes a plurality of transistors connected between a first voltage terminal and a first reset voltage terminal, and at least one transistor of the plurality of transistors is a second type of transistor. The first type of transistor includes a first active layer, and the second type of transistor includes a second active layer. An electron mobility of the second active layer is less than an electron mobility of the first active layer.
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