HYBRID METAL-DIELECTRIC GRID AS CONTACT INSIDE THE RESONATOR FOR INGAN-VCSEL

Abstract

A vertical surface emitter laser (VCSEL) component is provided, comprising a light-emitting structure, at least one mirror structure, and a metal layer that is positioned between the light-emitting structure and the mirror structure, or functions as part of the mirror structure. The VCSEL component is configured to transmit light emitted by the light-emitting structure through the metal layer to the mirror structure. The metal layer has a grid and a continuous section. The grid structure has a plurality of conductors arranged adjacent to each other such that light emitted by the light-emitting structure passes through a gap between adjacent conductors of the grid structure to reach the mirror structure. The plurality of conductors also acts as an electrical contact to the light-emitting structure.

Description

[0001] This disclosure relates generally to vertical surface emitter laser components.

[0002] Fig. Figure 1 shows a schematic cross-section of a vertical surface emitter laser (VCSEL) component 10. A thin transparent electrical contact layer 13 is used in the VCSEL 10. The thin transparent electrical contact layer 13 is a transparent conductive oxide (TCO), typically indium tin oxide (ITO). The thin transparent electrical contact layer 13 typically has a thickness in the range of about 30 nm to 50 nm.

[0003] The thin transparent electrical contact layer 13 is arranged on a p-contact layer 17. A p-GaN passivation of the p-contact layer 17 or a dielectric layer 14, arranged between the transparent electrical contact layer 13 and the p-contact layer 17, forms a current aperture. The VCSEL 10 further comprises a distributed Bragg reflector (DBR) 12 on the transparent electrical contact layer 13. In addition, a metal layer 11, for example, a gold layer, can be formed on the thin transparent electrical contact layer 13 and the DBR 12. Light can be generated in an active region 15, which is arranged on an n-contact layer 16. The DBR 12 reflects light that is generated in the active region 15 and emitted in the direction of the DBR 12. Thus, in the VCSEL component 10, a laser resonator comprises two DBR mirrors 12 ( Fig. Figure 1 shows only one of the DBR mirrors 12, which are arranged parallel to a wafer surface, with the active region 15 consisting of one or more quantum wells for laser light generation between them. The DBR mirrors 12 are composed of layers with alternating high and low refractive indices. Each layer has a thickness corresponding to one-quarter of the laser wavelength in the material, resulting in an intensity reflectivity of over 99%. In VCSELs, mirrors with high reflectivity are required to compensate for the short axial length of the gain region. The p-type region 17 and the n-type region 16 are embedded between the mirrors.

[0004] The thin transparent electrical contact layer 13 is arranged at a node of a standing wave of an optical resonator of the VCSEL 10. The thickness and precision of the thin transparent electrical contact layer 13 result in significant absorption for the VCSEL 10. In other words, the p-GaN side of the VCSEL can exhibit high optical absorption and low electrical conductivity, leading to a high threshold voltage and high series resistance (high Vf (forward voltage)) as well as low efficiency. Therefore, the properties of the TCO material of the thin transparent electrical contact layer 13, e.g., electrical conductivity and light absorption, may be insufficient for some applications. Thus, the properties of the TCO material can lead to higher threshold currents and higher Vf. In this way, the known VCSEL 10 exhibits low efficiency.

[0005] It is an object of the invention to provide an improved vertical surface emitter laser (VCSEL) component with an improved thin transparent electrical contact layer. The transparent electrical contact layer exhibits lower optical absorption and higher conductive contact within the cavity for a p-side of the VCSEL.

[0006] In one aspect, a vertical surface emitter laser (VCSEL) component is provided, comprising: a light-emitting structure, at least one mirror structure, and a metal layer arranged between the light-emitting structure and the mirror structure. The VCSEL component is configured to transmit the light emitted by the light-emitting structure through the metal layer to the mirror structure. The metal layer has a grid structure and a continuous section. The grid structure has a plurality of adjacent conductors such that light emitted by the light-emitting structure passes through a gap between adjacent conductors of the grid structure to the mirror structure, and the plurality of conductors are coupled to the continuous section. The plurality of conductors also serve as an electrical contact to the light-emitting structure.

[0007] In another aspect, a vertical surface emitter laser (VCSEL) component comprises a light-emitting structure and a metal layer arranged on the light-emitting structure. The VCSEL component is configured to transmit light emitted by the light-emitting structure toward and through the metal layer. The metal layer has a lattice structure and a continuous section. The lattice structure has a multitude of adjacent conductors, such that light emitted by the light-emitting structure passes through a gap between adjacent conductors of the lattice structure. The multitude of conductors are connected to the continuous section. The lattice structure acts as a mirror structure for the VCSEL component. The VCSEL component has no further mirror structure on or above the metal layer.The multitude of wires also serves as an electrical contact to the light-emitting structure.

[0008] In another aspect, a method for fabricating a vertical surface emitter laser (VCSEL) component is described. The method comprises: forming a light-emitting structure, forming at least one mirror structure, and forming a metal layer between the light-emitting structure and the mirror structure. The VCSEL component is designed to transmit light emitted by the light-emitting structure through the metal layer to the mirror structure. The metal layer has a grid structure coupled to the continuous section. The grid structure has a plurality of conductors arranged side by side such that light emitted by the light-emitting structure passes through a gap between adjacent conductors of the grid structure toward the mirror structure. The plurality of conductors also serves as an electrical contact to the light-emitting structure.

[0009] In the drawings, the same reference numerals generally refer to the same parts in the different views. The drawings are not necessarily to scale but primarily serve to illustrate the principles of the invention. The following description details various aspects of the invention with reference to the following drawings, in which: Fig. 1 is a schematic cross-sectional view of a comparative example of a vertical surface emitter laser component; Fig. 2A is a schematic cross-sectional side view of a vertical surface emitter laser component; Fig. 2B is a schematic cross-sectional view from above of a vertical surface emitter laser component; Fig. 3 is a schematic cross-sectional view of a vertical surface emitter laser component; Fig. 4A-4D schematic cross-sectional side views of vertical surface emitter laser components are; Fig. Figures 5A-5B are schematic cross-sectional side views of vertical surface emitter laser components; and Fig. Figure 6 is a flowchart of a process for manufacturing a surface emitter laser component.

[0010] The following detailed description refers to the accompanying drawings, which illustrate specific details and aspects in which the disclosure can be implemented. One or more aspects are described in sufficient detail to enable those skilled in the art to put the disclosure into practice. Other aspects can be used, and structural, logical, and electrical modifications can be made without deviating from the scope of the disclosure. The various aspects described here are not necessarily mutually exclusive, as some aspects can be combined with one or more other aspects to form new aspects. Various aspects are described in connection with methods, and various aspects are described in connection with devices. However, it is understood that the aspects described in connection with methods are similarly applicable to devices, and vice versa.In the drawings, it should be noted that the same reference symbols are used to represent identical or similar elements, features, and structures. It should also be noted that the proportions in the drawings are not necessarily to scale and that the size of features may be emphasized to simplify the representation.

[0011] A vertical surface emitter laser (VCSEL) component is a semiconductor laser diode in which the laser radiation is emitted perpendicularly from a main surface (e.g., the top or bottom of the VCSEL), unlike conventional edge-emitting semiconductor lasers (in-plane lasers). VCSEL components can be used in various laser products, such as computer mice, fiber optic communication, laser printers, facial recognition, and smart glasses.

[0012] A vertical surface emitter laser (VCSEL) can be provided which—on or above a light-emitting structure—has a grating that acts as an electrical contact on the reflecting side, with a mirror structure, which is a metal structure, e.g., a metal layer that is not a distributed Bragg reflector (DBR)—in other words, DBR-free—on or above the grating. Thus, the reflecting side can be DBR-free. A mirror structure, e.g., with a DBR, can be formed on the emitting side of the VCSEL. In various embodiments, the light-emitting structure, the metal layer, and the mirror structure can be integrated on a common semiconductor substrate.

[0013] It should be noted that the reflective side and the emitting side can denote positions in relation to the light-emitting structure (also called light-generating structure) of the VCSEL relative to the light-emitting surface of the VCSEL.

[0014] Alternatively, the grid can be formed on the emitting side of the VCSEL, and a mirror structure, e.g., with DBR, can be formed on a reflecting side of the VCSEL. In various embodiments, the light-emitting structure, the metal layer, and the mirror structure can be integrated on a common semiconductor substrate.

[0015] Fig. 2A is a schematic cross-sectional side view of a vertical surface emitter laser component 100, and Fig. 2B is a schematic cross-sectional top view of the vertical surface emitter laser component 100 made of Fig. 2A. The vertical surface emitter laser component 100 (VCSEL) can comprise a light-emitting structure 104, at least one mirror structure 110, and a metal layer 120, which can be arranged between the light-emitting structure 104 and the mirror structure 110. The light-emitting structure 104, the mirror structure 110, and the metal layer 120 can be integrated on a common semiconductor substrate (not shown).

[0016] Alternatively or additionally, on an opposite side of the light-emitting structure 104, as in Fig. 4D and Fig. Figure 5A shows the VCSEL component 100 comprising a light-emitting structure 104 and a metal layer 120 arranged on the light-emitting structure 104. The VCSEL component 100 is configured to transmit light emitted by the light-emitting structure 104 towards and through the metal layer 120. The metal layer 120 has a lattice structure 106 and a continuous section 108. The lattice structure 106 has a plurality of conductors arranged adjacent to one another such that light emitted by the light-emitting structure 104 passes through a gap between adjacent conductors of the lattice structure 106. The plurality of conductors is connected to the continuous section 108. The lattice structure 106 can be configured as a mirror structure of the VCSEL component 100. The VCSEL component 100 can be free of any further mirror structures on or above the metal layer.

[0017] The VCSEL component 100 can be configured to transmit light 112, 116 emitted by the light-emitting structure 104 through the metal layer 120 to the mirror structure 110. The VCSEL component 100 can have an optical cavity configured to support at least one node of a standing wave of the light 114, 116 emitted by the light-emitting structure 104. The grating structure 106 can be arranged in the optical cavity at a position approximately corresponding to the position of the optical node in the optical cavity.

[0018] It should be noted that the light-emitting structure 104 can be any type of light-emitting semiconductor structure with a stack of semiconductor layers, as described in more detail below.

[0019] The mirror structure 110 can be any type of reflective structure that is configured to reflect at least some of the light 112 emitted by the light-emitting structure 104 towards the light-emitting structure 104.

[0020] It should be noted that the metal layer 120 can be a metal layer, e.g., a layer formed from metal, such as a gold or silver layer. Furthermore, the metal layer 120 can be partially electrically isolated from the light-emitting structure 104, e.g., partially electrically separated by means of a dielectric separation structure 208 (see, e.g., [reference]). Fig. 4A).

[0021] The lattice structure 106 can have a multitude of conductors, for example elongated electrically conductive structures, such as metallic conductors, metallic conductor tracks, metallic lines, etc. At least a subset of the conductors of the multitude of conductors can each be formed in a straight shape.

[0022] The multitude of conductors can be arranged side by side such that the light 112 emitted by the light-emitting structure 104 passes through a gap (e.g., a gap, an optical passage, or an optical gate) between adjacent conductors of the lattice structure 106 toward the mirror structure 110. The conductors can reflect or absorb some of the light 118 emitted by the light-emitting structure back toward the light-emitting structure, as shown in Fig. 2A is shown.

[0023] A dielectric structure 122 can accordingly be formed on at least a subset of the conductors of the multitude of conductors of the lattice structure 106, for example as dielectric conductor-shaped structures. For example, the dielectric structure 122 can be formed directly on the conductors of the metallic conductors, can be elongated like the metallic conductors, and can have a width comparable to the metallic conductors. Each of the dielectric conductor-shaped structures can have a width of less than 100 nm. The dielectric conductor-shaped structures can have a polarization function for the light passing through the lattice structure 106.

[0024] The conductors of the lattice structure 106 can be configured as a metastructure for the light emitted by the VCSEL component 100. For example, the conductors of at least a subset of the conductors of the lattice structure 106 can be optically coupled to the emitted light (e.g., with a polarization direction of the light emitted by the light-emitting structure 104).

[0025] The lattice structure 106 can be configured to linearly polarize light 112, 114 passing through it. That is, the lattice structure 106 can be configured such that the light 112, 114 passing through it has a polarization direction perpendicular to a direction of the lines of the lattice structure 106. In other words, the lines can be configured such that the light 112, 114 passing through the lattice structure 106 has a linear polarization direction; that is, the lines can be configured such that the light 112, 114 passing through the lattice structure 106 can only have a linear polarization direction. The dielectric structure 122 can be configured to enhance the linear polarization of the transmitted light, for example, by exhibiting reduced reflectivity and reduced absorption for an undesired polarization direction.

[0026] The lines can be arranged at a distance (also called pitch) from each other. At least a subset of the plurality of lines can be parallel to each other. The distance can be approximately constant for at least a subset of the plurality of lines. The distance can be smaller than one wavelength of the light emitted by the light-emitting structure 104. The distance can be less than 250 nm.

[0027] Each of the lines in at least a subset of the multitude of lines in the lattice structure 106 can have a thickness of approximately 10 nm (e.g., in a range of approximately 5 nm to 15 nm, or in a range of approximately 8 nm to approximately 12 nm). It should be noted that the thickness refers to a line extent that runs approximately parallel to a direction of propagation of the light emitted by the light-emitting structure.

[0028] Each of the lines in at least a subset of the plurality of lines can have a width of less than 150 nm. It should be noted that the width refers to a lateral extent of the lines approximately perpendicular to the direction of propagation of the light emitted by the light-emitting structure (in the plane of the light emitted by the light-emitting structure) and approximately perpendicular to a direction of the longitudinal extent of the lines (length).

[0029] The metal layer 120 can have a lattice structure 106 coupled to a continuous section 108 (also referred to as a connected section). The continuous section can electrically couple at least a subset of the conductors of the plurality of conductors of the lattice structure. For example, the continuous section 108 can couple the subset to an environment of the VCSEL component 100, e.g., as an electrical interface.

[0030] The continuous section 108 of the metal layer 120 can be configured as an electrical current distribution layer. The continuous section 108 can be coupled to generate a bias potential between the metal layer 108 and the light-emitting structure 104, e.g., for injecting charge carriers that recombine in the light-emitting structure and emit light. Therefore, the grid section 106 of the metal layer 120 replaces the TCO of the comparator device.

[0031] The metal layer 120 has an aperture section that can encompass the lattice section 106. The aperture section can define at least part of a light path of the light emitted by the light-emitting structure 104.

[0032] The VCSEL component 100 with the lattice structure 106 generates a light emission with highly linearly polarized light, the polarization direction of which is determined by the construction or the crystal orientation.

[0033] The grating structure 106 can be formed from metal conductors that provide improved contact within the cavity, for example, compared to a TCO contact. For instance, the grating structure is an ultrathin metal grating, similar to a polarizer, which can be arranged at a node of a standing wave in the optical cavity of the VCSEL component 100. This can lead to minimized absorption of the emitted light by the grating structure 106, for example, if the orientation of the emitted light corresponds to the polarization direction provided by the grating structure. Thus, the grating structure 106 can inherently define and fix the polarization direction of the emitted light, for example, without the use of a liquid crystal layer.

[0034] The lattice structure 106, together with the corresponding dielectric structure 122, can form a hybrid metal-dielectric lattice. To illustrate: a hybrid metal-dielectric lattice is a metasurface that is a combination of a metal lattice and a dielectric material with a high refractive index deposited on it, e.g., with a refractive index greater than that of an embedding dielectric formed on the dielectric structure.

[0035] The hybrid metal-dielectric grid can be configured with a transmission close to 1 (T≈1). The hybrid metal-dielectric grid can be positioned at a node of a standing wave in a cavity of the VCSEL component. In this way, the hybrid metal-dielectric grid can exhibit low coupling with the light wave emitted by the light-emitting structure, thereby minimizing the absorption of the light emitted by the light-emitting structure.

[0036] Alternatively or additionally, the hybrid metal-dielectric grid can be used as a mirror structure 110 or be part of it. In this way, the hybrid metal-dielectric grid can replace a DBR mirror on the emitting side of the VCSEL component (see also Fig. 5A and Fig. 5B), e.g. in addition to replacing the TCO contact layer on the emitting side of the VCSEL component 100.

[0037] The hybrid metal-dielectric grid can be designed to act as a resonant mirror with a reflection close to 1 in one polarization direction, e.g., R x > 0.99 and R y ≈ 0 for light propagation in the z-direction. Such high reflectivity can be achieved by optimizing the materials, dimensions, and spacing of the dielectric structure and the metal grid structure of the hybrid metal-dielectric grid. Thus, the light emitted by the VCSEL component into its surroundings can laser in x-polarization without requiring an additional mirror on the emitting side. Therefore, the hybrid metal-dielectric grid can provide a VCSEL component with a high-contrast grid (HCG) that does not require a TCO contact layer for current propagation. Alternatively or additionally, the reflectivity R can be xin the x-direction in combination with the hybrid metal-dielectric grid by either a DBR mirror ( Fig. 4B) or a reflective metal layer ( Fig. 4B and Fig. 5B) is used on a reflective side of the VCSEL component 100, e.g. depending on a reflectivity on a top surface R top and a reflectivity on a bottom side R bottom of the VCSEL component 100. The VCSEL component can emit light into its surroundings in any x-polarization direction and y-polarization direction with light propagation in the z-direction depending on a loss threshold.

[0038] Fig. Figure 3 is a schematic top-down cross-sectional view of a VCSEL component. Fig. 2B. Fig. Figures 4A-4D are schematic cross-sectional views from the side of vertical surface emitter laser components.

[0039] Fig. Figure 3 shows an aperture 302 for optical mode limiting and / or current limiting, which is provided by an aperture structure 208 (see Fig. 4A and Fig. 4B) is formed, which is arranged between the metal layer 120 and the light-emitting structure 104.

[0040] Fig. Figure 4A shows the VCSEL component 100 with a lattice structure 106 with a SiO2 layer 208 that defines the aperture and a mirror structure 110 with a metallic reflective layer 506.

[0041] Fig. Figure 4B shows the VCSEL component 100 with a lattice structure 106 with a passivation treatment 208 that defines the aperture, and a mirror structure 110 with a metallic reflective layer 506.

[0042] Fig. Figure 4C shows the VCSEL component 100 with a lattice structure 106 with a passivation treatment 208 that defines the aperture, and a mirror structure 110 without a metallic reflection layer 506.

[0043] Fig. Figure 4D shows the VCSEL component 100 with a lattice structure 106 with a dielectric structure 122 (see Fig. 2A) on the grid structure 106 and a mirror structure without DBR mirror 202 (see Fig. 4A).

[0044] With reference to Fig. The aperture structure 208 can be configured as an electric current aperture in 3 to 4D.

[0045] The aperture structure 208 can, for example, be formed from a SiO2 layer, as in Fig. 4A and Fig. 4D representation. Alternatively or additionally, the aperture structure 208 can be formed by passivating the adjacent contact layer, for example the p-contact layer 210, as shown in Fig. 4B and Fig. 4C shown.

[0046] In the Fig. 4A and Fig. In the examples shown in Figure 4C, the spacing (e.g., the distance between adjacent conductors) of the lattice structure conductors can be configured to be smaller than the wavelength of the light emitted by the light-emitting structure. For example, for blue light emitted by the light-emitting structure, the spacing can be less than 250 nm. The lattice structure conductors can be embedded in SiO2 / GaN, for example. The lattice structure conductors can have a width of less than 150 nm, for example, less than 100 nm. The lattice structure conductors can have a thickness of approximately 10 nm.

[0047] In the Fig. In the example shown in Figure 4B, the lattice structure can be configured with a transmission close to 1 (T ≈ 1) and positioned at a node of the cavity's standing wave. In this way, the lattice structure can minimize absorption losses. Nearly uniform transmission can be achieved by optimizing the height and width of the dielectric structure and the lattice structure's conductivity. Thus, the hybrid dielectric-metallic lattice structure with uniform transmission can function as a Huygens metasurface and exhibit balanced electrical and magnetic Mie resonances.

[0048] It should be noted that Fig. Figure 5A shows an enlarged view of the part of the VCSEL component that contains the lattice structure and its environment in the Fig. Figure 4C illustrates the VCSEL component. The dielectric spacer layer 206 can be formed by an embedded dielectric layer 504 with a refractive index lower than that of the dielectric lattice structure. For example, the embedding dielectric layer 504 can be made of SiN, SiO2, or any combination thereof, and the dielectric lattice structure can be made of NbO, TiO, TaO, or any combination thereof.

[0049] Furthermore, they show Fig. 4D and Fig. 5A is an example of an emitting side of the VCSEL component 100, and Fig. Figure 5B can illustrate a reflective side of the VCSEL component 100 with a mirror structure 110, e.g. the metallic reflective layer 506.

[0050] The aperture structure 208 can have an aperture. The light 114 emitted by the light-emitting structure 104 passes through the aperture and the lattice structure 106. The transmitted light 112 (see Fig. 2A) can exhibit linear polarization; for example, it can be linearly polarized and have a polarization direction 304 in the plane (represented here as the y-direction) of the grating structure and perpendicular to the linear lines of the grating structure 106. Thus, a polarization of a laser surface emission of the VCSEL component can be perpendicular to a direction of the lines of the grating structure 106 used for current distribution. The lines of at least a subset of the lines of the grating structure 106 can be very close together or further apart, similar to a "polarizer". Thus, the lines can polarize the transmitted light, and the grating structure can be essentially transparent with respect to the y-polarization direction.

[0051] The light-emitting structure 104 can have a p-contact semiconductor layer 210 (e.g., a p-GaN layer), an n-contact semiconductor layer 212 (e.g., an n-In layer), and an active region 214, which can be arranged between the p-contact semiconductor layer 210 and the n-contact semiconductor layer 212, as shown in Fig. 4A to 4D is shown.

[0052] The continuous section 108 of the metal layer can be an electrical contact for the p-contact layer, which is arranged in the aperture of the aperture structure.

[0053] The active area 214 can be set up, the light emitted by the light-emitting structure 104 112, 116 (see Fig. 2A). At least one of the p-contact semiconductor layer 210 and the n-contact semiconductor layer 212 can be arranged in the aperture of the aperture structure 208. The aperture structure 208 can, for example, be a dielectric layer or passivated p-GaN.

[0054] As in the Fig. As shown in Figures 4A to 4D, the mirror structure 110 can have a metallic reflective layer 204 arranged on or above a dielectric spacer 206 (also referred to as a spacer layer). The spacer layer 206 can be any encapsulation and planarization layer of the lattice structure. The spacer layer 206 can also be part of the DBR. The spacer layer 206 can be formed at least partially by the embedding layer 504, as shown, for example, in Fig. 5A and Fig. 5B is shown.

[0055] The mirror structure 110 can further comprise a metallic reflective layer 204, which is formed, for example, from gold or the same material as the conductors of the lattice structure. The metallic reflective layer 204 can be arranged on or above the embedding layer 504. The mirror structure 110 can comprise a distributed Bragg reflector (DBR) 202. The mirror structure 110 can further comprise a metallic reflective layer 204 arranged on or above the DBR 202. A surface of the mirror structure 110 can have an emission area 220 of the VCSEL component 100 to emit light 114, which is emitted in the light-emitting structure 104, into an environment of the VCSEL component 100.

[0056] The light-emitting structure 104 can have a first side and a second side opposite the first side. The metallic layer 120 can be a first metallic layer 120 arranged on the first side of the light-emitting structure 104, and the VCSEL component 100 can further comprise a second metallic layer 120 arranged on the second side of the light-emitting structure 104.

[0057] Fig. Figures 5A-5B are schematic cross-sectional side views of vertical surface emitter laser components. The embedding layer 504 can be arranged at least between the conductors of the grating structure 106, as shown in Fig. 5A and Fig. 5B is shown.

[0058] As previously described, the lattice structure 106 can facilitate the TCO contact in the comparative example ( Fig. 1) replace, and the hybrid lattice structure with lattice structure 106 and the corresponding dielectric structure 122 can replace either the upper DBR mirror or the lower DBR mirror of the comparison example. It should be noted that the hybrid metal-dielectric lattice is configured as an electric or magnetic resonance mirror with a reflection close to 1 in one polarization direction (e.g., R). x > 0.99 and R y ≈ 0) to act, as in Fig. 5A and Fig. Figure 5B shows that such high reflectivity can be achieved by optimizing the materials, dimensions, and spacing of the dielectric and metal grids.

[0059] For example, a dielectric structure 122 can be formed on at least a subset of the conductors of the plurality of conductors of the lattice structure 106. Thus, the embedding layer 504 can be formed on or above the dielectric structure 122. The mirror structure 110 can be formed on or above the embedding layer 504. The material of the dielectric structure 122 has a first refractive index, and the material of the embedding layer 504 has a second refractive index. The first refractive index can be greater than the second refractive index.

[0060] It should be noted that the metallic reflective layer 506 can act as an additional reflector.

[0061] Without the metallic reflective layer 506 (see Fig. 5A) the VCSEL component can therefore emit light with x-polarization from the emitting side. The VCSEL component with metallic reflective layer 506 (see Fig. 5B) can emit light with x- or y-polarization.

[0062] Fig.Figure 6 shows a flowchart of a process 600 for fabricating a vertical surface emitter laser (VCSEL) component. The process 600 can include: forming 602 a light-emitting structure, forming 604 a metallic layer with a lattice structure on the light-emitting structure such that light emitted from the light-emitting structure passes through gaps between adjacent conductors of the lattice structure, and forming 606 at least one mirror structure on or above the metallic layer. The VCSEL component can be configured to transmit light emitted from the light-emitting structure through the metal layer to the mirror structure. The metal layer can have a lattice structure 106.The grid structure can have a large number of conductors that can be arranged next to each other in such a way that light emitted from the light-emitting structure passes through a gap between adjacent conductors of the grid structure to the mirror structure.

[0063] The following are some examples that relate to what has been described here and shown in the illustrations.

[0064] Example 1 is a vertical surface emitter laser (VCSEL) component comprising: a light-emitting structure, at least one mirror structure, and a metal layer arranged between the light-emitting structure and the mirror structure. The VCSEL component is configured to transmit light emitted by the light-emitting structure through the metal layer to the mirror structure. The metal layer has a grid structure coupled to the through-section. The grid structure has a plurality of conductors arranged adjacent to each other such that light emitted by the light-emitting structure passes through a gap between adjacent conductors of the grid structure to reach the mirror structure. The plurality of conductors also acts as an electrical contact to the light-emitting structure.

[0065] For example, the continuous section can connect at least a subset of the multitude of lines in the grid structure.

[0066] In Example 2, the object of Example 1 can optionally also have a dielectric structure, which is formed accordingly at least on a subset of the conductors of the multitude of conductors of the grid structure.

[0067] In Example 3, the object of Example 1 or 2 may optionally have at least a subset of the multitude of lines formed in a straight line.

[0068] In Example 4, the object of any of Examples 1 to 3 can optionally have a lattice structure arranged such that light passing through the lattice structure is linearly polarized.

[0069] In Example 5, the object of any of Examples 1 to 4 may optionally have a lattice structure arranged such that the light passing through the lattice structure has a polarization direction perpendicular to a direction of the lines of the lattice structure.

[0070] In Example 6, the object of any of Examples 1 to 5 may optionally have the conductors designed such that the light passing through the grid structure has a linear polarization direction.

[0071] In Example 7, the object of any of Examples 1 to 6 can optionally have the conductors designed such that the light passing through the grid structure has only a linear polarization direction.

[0072] In Example 8, the object of any one of Examples 1 to 7 can optionally have the conductors arranged at a distance from each other. The distance is approximately constant for at least a subset of the plurality of conductors.

[0073] In Example 9, the object of any of Examples 1 to 8 may optionally have that each of the conductors of at least a subset of the plurality of conductors of the lattice structure has a thickness of about 10 nm.

[0074] In Example 10, the object of any of Examples 1 to 9 may optionally have a distance that is smaller than a wavelength of the light emitted by the light-emitting structure.

[0075] In Example 11, the object from Example 10 can optionally have a distance of less than 250 nm.

[0076] In Example 12, the subject of any of Examples 1 to 11 may optionally have that each of the lines of at least a subset of the plurality of lines of lines has a width of less than 150 nm.

[0077] In Example 13, the object of any of Examples 1 to 12 can optionally have at least a subset of the plurality of lines arranged parallel to each other.

[0078] In Example 14, the subject of any of Examples 1 to 13 may optionally have the lines of the grid structure arranged as a metastructure for the light emitted by the VCSEL component.

[0079] In Example 15, the object of Example 14 may optionally have the conductors of at least a subset of the conductors of the grid structure optically coupled to each other in the lateral direction (in the plane of the direction of light emitted by the light-emitting structure).

[0080] In Example 16, the object of any of Examples 1 to 15 may optionally have that the metal layer further comprises a continuous section connected to the light-emitting structure.

[0081] In Example 17, the object from Example 16 can have an aperture section in the continuous portion of the metal layer. The aperture section defines at least part of a light path of the light emitted by the light-emitting structure.

[0082] In Example 18, the object of Example 16 or 17 may optionally have the continuous section of the metal layer configured as an electrical current distribution layer.

[0083] In Example 19, the object of any of Examples 1 to 18 may optionally further include an embedding layer that is arranged at least between the conductors of the grid structure.

[0084] In Example 20, the object of Example 19 can optionally have a dielectric structure, which is formed accordingly on at least a subset of the conductors of the plurality of conductors of the lattice structure, wherein the embedding layer is further formed on or above the dielectric structure. The mirror structure is formed on or above the embedding layer.

[0085] In Example 21, the object from Example 20 can optionally have the material of the dielectric structure having a first refractive index and the material of the embedding layer having a second refractive index. The first refractive index is greater than the second refractive index.

[0086] In Example 22, the subject of any of Examples 2 to 21 may optionally have that the mirror structure further comprises a metallic reflective layer arranged on or above the dielectric layer.

[0087] In Example 23, the subject of any of Examples 20 to 15 may optionally have that the mirror structure further comprises a metallic reflective layer arranged on or above the embedding layer.

[0088] In Example 24, the object of any of Examples 1 to 23 may optionally have a mirror structure that incorporates a DBR (Distributed Bragg Reflector) mirror.

[0089] In Example 25, the object of Example 24 may optionally have that the mirror structure further comprises a metallic reflective layer arranged on or above the DBR mirror.

[0090] In Example 26, the object of any of Examples 1 to 25 may optionally have a surface of the mirror structure having an emission surface of the VCSEL component in order to emit light emitted in the light-emitting structure into an environment of the VCSEL component.

[0091] In Example 27, the subject of any of Examples 1 to 26 may optionally include the VCSEL component having an optical cavity configured to support at least one standing wave of the light emitted by the light-emitting structure. The grating structure is arranged in the optical cavity at approximately one position of an optical node within the optical cavity.

[0092] In Example 28, the subject of any of Examples 1 to 27 may optionally have a light-emitting structure with a first side and a second side opposite the first side. The metal layer is a first metal layer arranged on the first side of the light-emitting structure, and the VCSEL component further comprises a second metal layer arranged on the second side of the light-emitting structure.

[0093] In Example 29, the object of any one of Examples 1 to 28 can further comprise an aperture structure arranged between the metal layer and the light-emitting structure. The aperture structure is configured as an electrical current aperture.

[0094] In Example 30, the object from Example 29 can optionally have an aperture structure. The light emitted by the light-emitting structure passes through the aperture.

[0095] In Example 31, the subject of any of Examples 1 to 30 may optionally include a light-emitting structure comprising a p-contact semiconductor layer, an n-contact semiconductor layer, and an active region situated between the p-contact semiconductor layer and the n-contact semiconductor layer. The active region is configured to emit light emitted by the light-emitting structure.

[0096] In Example 32, the subject of Example 31 may optionally have at least one of the p-contact semiconductor layer and the n-contact semiconductor layer arranged in the aperture of the aperture structure.

[0097] In Example 33, the subject of any of Examples 1 to 32 may optionally have the light-emitting structure (and optionally the mirror structure) and the metal layer integrated on a common semiconductor substrate.

[0098] Example 34 is a method for fabricating a vertical surface emitter laser (VCSEL) component. The method comprises: forming a light-emitting structure, forming a metal layer on the light-emitting structure, and forming at least one mirror structure, e.g., on or above the light-emitting structure. The VCSEL component is configured to transmit light emitted by the light-emitting structure through the metal layer to the mirror structure. The metal layer has a grid structure coupled to the through-section. The grid structure has a plurality of conductors arranged adjacent to each other such that light emitted by the light-emitting structure passes through a gap between adjacent conductors of the grid structure toward the mirror structure. The plurality of conductors also acts as an electrical contact to the light-emitting structure.

[0099] In Example 35, the procedure from Example 34 can additionally include any item from Examples 2 to 33.

[0100] Example 36 is a vertical surface emitter laser (VCSEL) component comprising a light-emitting structure and a metal layer mounted on the light-emitting structure. The VCSEL component is configured to transmit light emitted by the light-emitting structure toward and through the metal layer. The metal layer has a lattice structure and a continuous section. The lattice structure has a plurality of conductors arranged such that light emitted by the light-emitting structure passes through a gap between adjacent conductors of the lattice structure, and the plurality of conductors are coupled to the continuous section. The lattice structure is configured as a mirror structure of the VCSEL component, and the VCSEL component has no further mirror structure on or above the metal layer.The numerous wires also function as an electrical contact to the light-emitting structure.

[0101] In Example 37, the object from Example 36 can additionally include any object from Examples 2 to 33.

[0102] The word "exemplary" is used here to mean "serving as an example, instance, or illustration." Each example or design described here as "exemplary" is not necessarily to be understood as preferred or advantageous over other examples or designs.

[0103] The terms "multiple" and "several" in the description or claims expressly refer to a quantity greater than one. The terms "group (of)," "set [of]," "collection (of)," "series (of)," "sequence (of)," "grouping (of)," etc., and similar terms in the description or claims refer to a quantity equal to or greater than one, i.e., one or more. Any term expressed in the plural form that does not expressly state "plurality" or "multiple" also refers to a quantity equal to or greater than one.

[0104] The term "connected" can be understood in the sense of a connection and / or interaction (e.g., mechanical, optical, and / or electrical), whether direct or indirect. For example, several elements can be mechanically connected in such a way that they are physically held together (e.g., a plug connected to a socket), and electrically connected in such a way that they have an electrically conductive path (e.g., signal paths along a communication chain).

[0105] While the above descriptions and accompanying figures may depict optical device components as separate elements, those skilled in the art will recognize the various ways of combining or integrating discrete optical functions into a single element. This may involve combining two or more components from a single component. Conversely, those skilled in the art will recognize the possibility of separating a single element into two or more discrete elements, for example, by dividing a single component into two or more separate components.

[0106] It is understood that the implementations of methods described herein are exemplary and are therefore to be understood as implementable in a corresponding device. Likewise, it is understood that the implementations of devices described herein are to be understood as implementable as a corresponding method. It is therefore understood that a device corresponding to a method described herein may comprise one or more components configured to perform every aspect of the associated method.

[0107] All acronyms defined in the above description also apply to all claims contained herein.

[0108] Although the disclosure has been shown and described with reference to specific embodiments, it should be clear to those skilled in the art that various changes in form and detail can be made without departing from the spirit and scope of the disclosure as defined by the appended claims. The scope of the disclosure is thus specified by the appended claims, and all changes that fall within the meaning and scope of equivalence of the claims are therefore intended to be included. List of reference numbers 10 VCSEL 11 Metal layer 12 DBR mirrors 13 thin transparent contact layers 14 Aperture 15 active area 16 n contact layer 17 p-contact layer 100 VCSEL 102 light-emitting section 104 light-emitting structure 106 Lattice structure 108 continuous section 110 mirror structure 112, 116 Light emitted towards the mirror structure 114, 118 Light reflected towards the light-emitting structure 120 metal layer 122 Dielectric structure 302 Aperture 304 Polarization direction 202 DBR 204 Metallic reflective coating 206 spacers 208 Aperture structure 210 p-contact layer 212 n-contact layer 214 active area 216 Aperture area 220 light emission area 504 Cover structure 506 Metallic reflective coating 600, 602, 604, 606 Procedures and procedural steps

Claims

[1] Vertical surface emitter laser, VCSEL, component, comprising: a light-emitting structure, at least one mirror structure and a metal layer arranged between the light-emitting structure and the mirror structure, wherein the VCSEL component is configured to transmit light emitted from the light-emitting structure through the metal layer to the mirror structure, wherein the metal layer has a lattice structure and a continuous section, wherein the grid structure has a plurality of conductors arranged side by side in such a way that light emitted from the light-emitting structure passes through a gap between adjacent conductors of the grid structure to the mirror structure, and wherein the multitude of conductors is coupled to the continuous section and is set up as an electrical contact to the light-emitting structure. [2] Vertical surface emitter laser, VCSEL, component, comprising: a light-emitting structure and a metal layer arranged on the light-emitting structure, wherein the VCSEL component is configured to transmit light emitted by the light-emitting structure towards and through the metal layer, wherein the metal layer has a lattice structure and a continuous section, wherein the grid structure has a plurality of conductors arranged side by side such that light emitted by the light-emitting structure passes through a gap between adjacent conductors of the grid structure, and wherein the plurality of conductors is coupled to the continuous section; wherein the grid structure is configured as a mirror structure of the VCSEL component and the VCSEL component is free of further mirror structures on or above the metal layer, and wherein the plurality of conductors is configured as an electrical contact to the light-emitting structure. [3] VCSEL component according to claim 1 or 2, further comprising a dielectric structure which is formed accordingly at least on a subset of the conductors of the plurality of conductors of the grid structure. [4] VCSEL component according to one of claims 1 to 3, wherein the lattice structure is arranged such that the light passing through the lattice structure is linearly polarized. [5] VCSEL component according to claim 4, wherein the conductors are designed such that the light passing through the grid structure has a linear polarization direction. [6] VCSEL component according to claim 5, wherein at least a subset of the lines of the plurality of lines are each formed in a straight line. [7] VCSEL component according to any one of claims 1 to 6, wherein each of the conduits of at least a subset of the plurality of conduits of the grid structure has a thickness of about 10 nm. [8] VCSEL component according to any one of claims 1 to 7, wherein the conductors of at least a subset of the plurality of conductors of the grid structure are arranged at a distance from each other, the distance being less than a wavelength of the light emitted by the light-emitting structure. [9] VCSEL component according to claim 8, wherein the distance is less than 250 nm. [10] VCSEL component according to any one of claims 1 to 9, wherein each of the conduits of at least a subset of the plurality of conduits of the grid structure has a width of less than 150 nm. [11] VCSEL component according to one of claims 1 to 10, wherein the lines of at least a subset of the lines of the grid structure are optically coupled to each other in the lateral direction. [12] VCSEL component according to any one of claims 1 to 11, wherein the continuous section connects at least a subset of the plurality of lines of the grid structure. [13] VCSEL component according to any one of claims 1 to 12, wherein the continuous section of the metal layer has an aperture section, the aperture section defining at least a part of the light emitted by the light-emitting structure. [14] VCSEL component according to any one of claims 3 to 13, wherein the mirror structure further comprises a metallic reflective layer arranged on or above the dielectric layer. [15] VCSEL component according to any one of claims 1 to 12, wherein the mirror structure comprises a DBR mirror, Distributed Bragg Reflector. [16] VCSEL component according to any one of claims 1 to 15, wherein the light-emitting structure has a first side and a second side opposite the first side, wherein the metallic layer is a first metallic layer arranged on the first side of the emitting structure, and the VCSEL component further comprises a second metallic layer arranged on the second side of the light-emitting structure. [17] VCSEL component according to claim 16, further comprising an aperture structure arranged between the metal layer and the light-emitting structure, wherein the aperture structure is configured as an electrical current aperture. [18] VCSEL component according to any one of claims 1 to 17, wherein the light-emitting structure comprises a p-contact semiconductor layer, an n-contact semiconductor layer and an active region arranged between the p-contact semiconductor layer and the n-contact semiconductor layer. [19] VCSEL component according to any one of claims 1 to 18, wherein at least the light-emitting structure and the metal layer are integrated on a common semiconductor substrate. [20] Method for manufacturing a vertical surface emitter laser, VCSEL, component, comprising: Formation of a light-emitting structure, Forming a metal layer on the light-emitting structure and forming at least one mirror structure on or above the metal layer, wherein the VCSEL component is designed such that light emitted from the light-emitting structure is transmitted through the metal layer to the mirror structure, wherein the metal layer has a continuous section which is a current distribution structure, and has a lattice structure, wherein the grid structure has a plurality of conductors arranged side by side such that light emitted by the light-emitting structure passes through a gap between adjacent conductors of the grid structure in the direction of the mirror structure, and wherein the plurality of conductors is configured as an electrical contact to the light-emitting structure.

Images