Molding system, molding method, and product manufacturing method

Abstract

To provide a molding system capable of stabilizing volatilization of a composition.SOLUTION: A molding system includes: composition applying means configured to apply a composition on a substrate; molding means configured to perform a molding process by bringing a mold into contact with the composition; transport means configured to transport the substrate between the composition applying means and the molding means; calculation means configured to calculate an expected value of an interval time from the applying of the composition to start of the contact; and control means configured to perform control such that a difference between an actual interval time and a target value of the interval time becomes less than a predetermined value by changing at least one of a timing of the applying, a transport waiting time, a transport time, and a contact waiting time in a case in which a difference between the expected value and the target value of the interval time is equal to or greater than the predetermined value.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a molding system, a molding method, and a method for manufacturing an article. [Background technology]

[0002] As the demand for miniaturization of semiconductor devices increases, in addition to conventional photolithography technology, attention is being paid to a microfabrication technology in which an uncured composition on a substrate is molded in a mold, cured, and a pattern of the composition is formed on the substrate. This technology is called an imprint technology, which can form a fine pattern on the order of several nanometers on a substrate, and is used in an imprint system.

[0003] One example of imprinting technology is the photocuring method. An imprinting apparatus that employs the photocuring method forms a pattern on a substrate by molding a photocurable composition supplied to a shot area on the substrate with a mold, curing the composition by irradiating the composition with light, and then separating the mold from the cured composition.

[0004] Furthermore, a planarization system has also been proposed that uses imprint technology to form a flat surface on a substrate. For example, Patent Document 1 describes a technology in which a composition is dropped based on steps on the substrate, and the composition is cured while the flat surface of a mold is brought into contact with the dropped composition, thereby planarizing the composition on the substrate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Special Publication No. 2011-529626 Summary of the Invention [Problem to be solved by the invention]

[0006] In such a planarization system, the composition is dropped in a unit separate from the unit performing the planarization process, so there is an interval between the time the composition is dropped and the time it takes to transport the substrate and the time it comes into contact with the mold. Therefore, there is a possibility that the composition will volatilize during that time, resulting in a decrease in the amount of the composition.

[0007] If the composition is brought into contact with a mold when the amount of the composition on the substrate is less than the appropriate amount due to volatilization of the composition, the planarizing film formed by curing the composition may be insufficient in thickness or may be defective. On the other hand, if the composition is brought into contact with a mold when the amount of the composition on the substrate is more than the appropriate amount, the planarizing film formed by curing the composition may be thicker than the appropriate amount.

[0008] Furthermore, in the process of manufacturing a semiconductor device, which is the final product, there are steps (etching, etc.) that are affected by the thickness of the planarization film formed by hardening the composition, and optimizing the amount of the composition is an important issue in stabilizing these steps. Moreover, such problems may also exist in imprint systems.

[0009] In order to alleviate the above-mentioned problems, one of the objects of the present invention is to provide a molding system capable of stabilizing the amount of volatilization of a composition. [Means for solving the problem]

[0010] As one aspect of the present invention, a molding system includes: A composition applying means for applying a composition to a substrate; A molding means for contacting the composition with a mold and performing a molding process; a conveying means for conveying the substrate between the composition applying means and the molding means; a calculation means for calculating an expected value of an interval between application of the composition and the start of the contact; and a control means for controlling, when the difference between the predicted value and the target value of the interval is equal to or greater than a predetermined value, at least one of the application timing, the transport wait time, the transport time, and the contact wait time to be controlled so that the difference between the actual interval and the target value is within the predetermined value. Effect of the Invention

[0011] According to the present invention, a molding system capable of stabilizing the volatilization of a composition can be realized. [Brief description of the drawings]

[0012] [Figure 1] 1A to 1D are diagrams illustrating a flattening process in a flattening system serving as a molding system according to an embodiment of the present invention. [Diagram 2] 1 is a diagram illustrating an example of the configuration of a planarization system including a planarization apparatus according to an embodiment of the present invention. [Diagram 3] 1 is a flowchart illustrating an example of a process of a planarization method in a planarization system according to an embodiment of the present invention. [Figure 4] FIG. 1 is a diagram illustrating an interval according to an embodiment of the present invention; [Diagram 5] 4 is a flowchart showing an example of a process for determining the application start timing or the contact step start timing in step S3 and step S4 in FIG. 3. [Figure 6] 1A and 1B are diagrams illustrating an example of control from application of the composition to the start of contact in this embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following embodiment. In each drawing, the same members or elements are given the same reference numerals, and duplicated descriptions are omitted or simplified.

[0014] 1(A) to 1(D) are diagrams for explaining a planarization process in a planarization system as a molding system according to an embodiment of the present invention. The planarization process in this embodiment is a process in which a composition is dropped onto the entire surface of a substrate, the composition is brought into contact with a mold, and the composition is planarized. However, the planarization process also includes a process in which the composition on a partial region of a substrate is brought into contact with a mold to planarize the composition.

[0015] The molding system according to the embodiment of the present invention is not limited to a flattening system, but also includes an imprint system for performing an imprint process. Also, the molding process (molding means) for performing a molding process by bringing a mold into contact with a composition includes a molding process (molding means) for imprinting.

[0016] 1(A), a composition ML is placed on a substrate 1 on which a base pattern W is formed (composition placing step). Specifically, a droplet supplying part DP such as a dispenser drops the composition ML used as a flattening material onto the substrate 1. Here, the distribution of the composition ML placed by the droplet supplying part DP may be adjusted according to the shape of the base pattern W formed on the surface of the substrate 1.

[0017] 1(B), a mold SS (also called a superstrate) having a flat surface on the substrate 1 with dimensions equal to or larger than those of the substrate 1 is brought into contact with the composition ML on the substrate 1 (contact step). This causes the composition ML to spread and become a film.

[0018] Next, as shown in FIG. 1(C), with the mold SS in contact with the composition ML on the substrate 1, energy for curing the composition ML is applied to the composition ML from the light source IL, thereby curing the composition ML (curing process).

[0019] During the curing step, it is necessary that the flat surface of the mold SS is in contact with the entire composition ML on the substrate, and that the flat surface of the mold SS conforms to the surface shape of the substrate 1. As the curing energy used in the curing step, light such as ultraviolet light radiated from a light source (light irradiation unit) (not shown) can be used.

[0020] Details will be described later, but one example of using light as the curing energy is a method in which a photocurable material is used for composition ML and a material that transmits light from a light source is used for mold SS, and light from light source IL (curing part) is irradiated onto composition ML through mold SS to cure composition ML.

[0021] 1(D), the mold SS is separated from the cured composition ML on the substrate 1 (separation step). As a result, a planarizing film made of the cured composition ML remains on the substrate 1. In other words, by using the mold SS, a planarizing layer (planarizing film) having a locally planarized surface can be formed by the cured product of the composition ML.

[0022] The above-mentioned planarization method includes, but is not limited to, an example in which a planarization layer is formed all over the substrate 1 by using a mold SS having an area that covers all over a plurality of shot regions of the substrate 1. In the following description, the base pattern W on the substrate 1 is omitted, but it is assumed that the base pattern W is provided between the substrate 1 and the composition ML according to the manufacturing process. However, the method is not limited to this.

[0023] 2 is a diagram showing a configuration example of a planarization system including a planarization apparatus according to an embodiment of the present invention. In this embodiment, directions are indicated using an XYZ coordinate system with the vertical direction as the Z axis. The planarization system 100 includes one or more planarization apparatuses (film forming apparatuses) R. Two planarization apparatuses are shown in FIG. 2.

[0024] In the planarization apparatus R, a planarization process is carried out including a contacting step of bringing the composition ML on the substrate 1 described with reference to FIG. 1 into contact with the mold SS, a curing step of curing the composition ML, and a separation step of separating the cured product of the composition ML from the mold SS.

[0025] 2 also includes a substrate transport container 203, a substrate transport mechanism 204, a preparation station 220, a heat treatment section 209, and a control section 210. The substrate transport mechanism 204 may be, for example, an Equipment Front End Module (EFEM).

[0026] The substrate transport mechanism 204 can move (transport) the substrate 1 between the substrate transport pod 203, the thermal processing section 209, and the preparation station 220. The substrate transport pod 203 can be a FOUP (Front-Opening Unified Pod).

[0027] The substrate 1 stored in the substrate transport container 203 is transported to the preparation station 220 by the substrate transport mechanism 204. The preparation station 220 is provided with an alignment mechanism 205 and a droplet supply part (dispenser) DP. The droplet supply part DP is disposed above the alignment mechanism 205 in the Z axis direction.

[0028] The alignment mechanism 205 measures the rotation about the Z axis of the substrate 1 transferred from the substrate transfer container 203 by the substrate transfer mechanism 204, and adjusts the rotation about the Z axis of the substrate 1 to a target angle based on the result of the measurement.

[0029] The rotation of the substrate 1 around the Z axis can be measured, for example, by detecting a notch in the substrate 1. Furthermore, the alignment mechanism 205 can measure the central position in the XY directions in addition to the rotation angle of the substrate 1. Then, the alignment mechanism 205 can adjust the position of the substrate 1 based on the measurement result of the measured position of the substrate 1.

[0030] The position of the transport hand 202 when the substrate 1 is handed over from the alignment mechanism 205 to the transport hand 202 of the substrate transport mechanism 204 may be adjusted based on the measurement result of the position of the substrate 1. In addition, the preparation station 220 may be provided with a function of adjusting the temperature of the substrate 1.

[0031] 1(A), the droplet supply part DP sequentially deposits the composition ML on the substrate 1. The droplet supply part DP is connected to a circulation part 211 that circulates the composition ML. The circulation part 211 circulates the composition ML to maintain the physical properties of the composition ML by adjusting the temperature, etc., and also to maintain the wettability of the discharge surface of the droplet supply part DP and to maintain the internal pressure of the droplet supply part DP constant.

[0032] The circulation path of the composition ML can be a path that returns to the storage tank from a storage tank provided in the circulation unit 211 through the discharge surface of the droplet supply unit DP. The droplet supply unit DP may be configured as a spin coater or a slit coater.

[0033] The substrate 1 is transferred from the substrate transfer container 203 to the preparation station 220 by the substrate transfer mechanism 204. In the preparation station 220, a process for rotating the substrate 1 around the Z axis and adjusting its position is performed, and a process for disposing the composition ML on the substrate 1 is also performed.

[0034] In one example, while the position of the substrate 1 held by the alignment mechanism 205 is fixed, the droplet supply unit DP moves along the XY plane while ejecting the composition ML, thereby placing the composition ML on the substrate 1.

[0035] In another example, the alignment mechanism 205 has a substrate transport unit, and the composition ML can be placed on the substrate 1 by ejecting the composition ML from the droplet supply unit DP while transporting the substrate 1 along the XY plane using the substrate transport unit.

[0036] Alternatively, the composition ML may be placed on the substrate 1 while the substrate transport unit transports the substrate 1 along the XY plane and the droplet supply unit DP also moves along the XY plane. Alternatively, after the alignment mechanism 205 measures the rotation and position of the substrate 1 about the Z axis, the composition ML may be placed on the substrate 1 by the droplet supply unit DP while the transport hand 202 of the substrate transport mechanism 204 holds the substrate 1.

[0037] The thermal processing section 209 is used to perform a baking process (heating process) or a cooling process of the substrate 1. The thermal processing section 209 may be configured as a part of the planarization apparatus R, or may be configured as a device separate from the planarization apparatus R.

[0038] The control unit 210 has a built-in CPU as a computer, and performs planarization processing by controlling each part of the planarization system 100 including the planarization apparatus R based on a computer program stored in a memory as a storage medium. That is, the control unit 210 functions as a control means for controlling the entire planarization system 100 by controlling the planarization apparatus R, the substrate transport mechanism 204, the preparation station 220, and the heat treatment unit 209.

[0039] The control unit 210 is configured, for example, by a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), or an ASIC (Application Specific Integrated Circuit), or a general-purpose or dedicated computer with a program embedded therein, or a combination of all or part of these.

[0040] Each of the planarizing apparatuses R constituting the planarizing system 100 may be provided with a control unit, and the planarizing process may be controlled by the control unit in each of the planarizing apparatuses R. Furthermore, the planarizing apparatuses R execute the planarizing process described in Fig. 1(B) to Fig. 1(D).

[0041] When multiple planarization apparatuses R are arranged in the planarization system 100, the multiple planarization apparatuses R may be arranged along the XY plane, or may be stacked along the Z axis.

[0042] In addition, in this embodiment, an example will be described in which the contact process, hardening process, and separation process are performed consecutively in the planarization device R, but the device may be divided into an device that performs the contact process, an device that performs the hardening process, and an device that performs the separation process.

[0043] As the composition ML, a curable composition that is cured by applying energy for curing can be used. As the energy for curing, electromagnetic waves, heat, etc. can be used. As the electromagnetic waves, for example, light such as infrared rays, visible light, and ultraviolet rays, whose wavelengths are selected from the range of 10 nm or more and 1 mm or less, can be used.

[0044] The curable composition is a composition that is cured by irradiation with light or by heating. The photocurable composition that is cured by irradiation with light contains at least a polymerizable compound and a photopolymerization initiator, and may contain a non-polymerizable compound or a solvent, as necessary. The non-polymerizable compound is at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal mold release agent, a surfactant, an antioxidant, a polymer component, and the like.

[0045] The composition ML may be disposed on the substrate 1 in the form of droplets, or in the form of islands or a film formed by connecting a plurality of droplets, by a droplet supply unit DP (liquid jet head). The viscosity of such a composition ML (viscosity at 25° C.) may be, for example, 1 mPa s or more and 100 mPa s or less.

[0046] In addition, in a method using heat as the curing energy, a thermoplastic resin is heated to a temperature equal to or higher than the glass transition temperature, and in a state in which the fluidity of the resin is increased, a mold is pressed against a substrate through the resin, and after cooling, the mold is separated from the resin, thereby forming a planarizing film.

[0047] In the following embodiment, an example will be described in which ultraviolet light is used as the curing energy and a photocurable material is used as the composition ML.

[0048] The substrate 1 is typically a silicon wafer, but is not limited thereto. The substrate 1 can be arbitrarily selected from aluminum, titanium-tungsten alloy, aluminum-silicon alloy, aluminum-copper-silicon alloy, silicon oxide, silicon nitride, and other semiconductor device substrates, quartz glass, ceramics, metals, resins, and the like.

[0049] The substrate 1 may have an adhesive layer formed by surface treatment such as silane coupling treatment, silazane treatment, formation of an organic thin film, etc., to improve the adhesiveness to the curable composition. The substrate 1 is typically a circle having a diameter of 300 mm, but is not limited thereto.

[0050] As the mold SS, a mold made of a light-transmitting material is used in consideration of the light irradiation process. Preferred materials for the mold SS include, for example, glass, quartz, light-transmitting resins such as PMMA (Polymethyl methacrylate) and polycarbonate resin, transparent metal deposition films, flexible films such as polydimethylsiloxane, photocured films, and metal films.

[0051] The mold SS is preferably a circle having a diameter larger than 300 mm and smaller than 500 mm, but is not limited to this. The thickness of the mold SS is preferably 0.25 mm or more and less than 2 mm, but is not limited to this.

[0052] In addition, the above-mentioned substrate transport mechanism 204 can also function as a mold transport mechanism that transports the mold SS to the flattening device R, and the transport hand 202 of the substrate transport mechanism 204 takes out the mold SS from a mold transport container (not shown), and the mold SS is transported to the flattening device R.

[0053] In the semiconductor formation process, the planarization layer formation (film formation) process shown in Figures 1(A) to 1(D) may be performed multiple times on one substrate 1. Many of the manufacturing processes for semiconductor devices involve processes in which high heat is applied to the substrate 1 during plasma etching, coating, cleaning, ion implantation, and the like.

[0054] Even after the substrate 1 has been planarized once, the composition ML may shrink or the distortion may be released due to heat applied in a later process, which may cause the flatness of the substrate 1 to decrease again. It is not efficient to perform a planarization treatment on the substrate 1 every time the flatness of the substrate 1 decreases.

[0055] Therefore, it may be advantageous to perform a heat cycle immediately after the formation of the flattening film to shrink the composition ML of the substrate 1 in advance, release the distortion, and then send the substrate 1 to the subsequent process. The heat treatment unit 209 described above is useful for such purposes.

[0056] The thermal processing section 209 can also be configured to process multiple substrates at once. For example, the thermal processing section 209 can stack the substrates 1 vertically at regular intervals and perform baking and cooling in batches for a certain number of substrates. For example, the substrates 1 returned to the substrate transport mechanism 204 can be sent to the thermal processing section 209, where baking at about 250°C to 400°C and rapid cooling can be performed on the multiple substrates 1.

[0057] Fig. 3 is a flowchart showing an example of a process of a flattening method in the flattening system according to an embodiment of the present invention. Note that the operation of each step in the flowchart in Fig. 3 is performed sequentially by a CPU or the like as a computer in the control unit 210 executing a computer program stored in a memory. Also, the flattening process is performed by the control unit 210 comprehensively controlling each part of the flattening system 100 as described above.

[0058] In step S1 of FIG. 3, the control unit 210 causes the substrate transport mechanism 204 to carry the substrate 1 into the planarization system 100.

[0059] Next, in step S2, the control unit 210 measures the rotation about the Z axis and the central position of the substrate 1 by the alignment mechanism 205, and adjusts the rotation about the Z axis and the position of the substrate 1 to a target angle based on the results.

[0060] Next, in step S3, the control unit 210 applies the composition to the substrate 11 by causing the droplet supply unit DP to drip droplets of the composition ML onto the substrate 1. Here, step S3 functions as a composition application step (composition application means) for applying the composition to the substrate. At this time, the amount of composition applied is adjusted and supplied based on step information due to a pattern or the like already configured on the substrate 11.

[0061] When an appropriate amount of the composition has been applied onto the substrate, the process proceeds to step S4, and the control unit 210 performs a transport step in which the substrate 1 is transported by the substrate transport mechanism 204 into a predetermined planarization device R. Here, step S4 functions as a transport step (transport means) that transports the substrate between the composition application step and the molding step.

[0062] Then, in step S5, the flattening process described with reference to Fig. 1(B) to Fig. 1(D) is carried out by a flattening device R. Here, step S5 functions as a molding step (molding means) in which a mold is brought into contact with the composition to carry out a molding process.

[0063] Next, in step S6, control unit 210 causes substrate transport mechanism 204 to carry substrate 1 into thermal processing unit 209, which then performs a baking process (heating process) on substrate 1 and a cooling process.

[0064] Next, in step S7, the control unit 210 determines that the planarization process of one substrate by the planarization system 100 is complete, and causes the substrate 1 to be carried out of the planarization system 100 by the substrate transport mechanism 204 and returned to the substrate transport pod 203 or the like.

[0065] Then, the process proceeds to step S8, where it is determined whether any substrates to be processed remain, i.e., whether the flattening process is to be terminated, and if any substrates to be processed remain, the process is started again from step S1. If it is determined in step S8 that the process is to be terminated, the flow of FIG.

[0066] Here, as mentioned above, when the composition on the substrate is less than the appropriate amount due to the volatilization of the composition, the thickness of the planarization film formed by curing the composition may be insufficient or may be defective, and the planarization formed on the substrate may be defective.In addition, when the composition on the substrate is more than the appropriate amount, the composition on the substrate is more than the appropriate amount, and the planarization may not be performed properly.

[0067] Furthermore, the process of manufacturing the final semiconductor device (etching, etc.) includes a step that is affected by the thickness of the planarization film formed by hardening the composition ML. The purpose of the planarization film is to form a flat surface on the substrate, but the thickness of the film must be stable between successive substrates to ensure the stability of the subsequent processes.

[0068] In the above-mentioned planarization apparatus and planarization method, the amount of composition ML applied to the substrate is one factor that affects the thickness of the planarization film. The amount of composition ML applied in the preparation station is controlled by the droplet supply unit and the command value thereto, and is kept almost constant.

[0069] However, when a highly volatile substance is used as composition ML, the amount of volatilization between the time of application at the preparation station and the time of contact between the substrate 1 and the mold SS in the planarization apparatus affects the amount of composition ML that is hardened.

[0070] For this reason, in the above-mentioned planarization apparatus, the amount of the cured composition ML is affected by the following processing time (interval) which is shown in Fig. 4. Fig. 4 is a diagram for explaining the interval according to this embodiment. In this embodiment, the sum of the following a) to d) is called the interval.

[0071] a) Transport waiting time 301 This is the time from when the composition ML is applied to the substrate in the preparation station 220 until the substrate is transferred from the preparation station 220 to the substrate transfer mechanism 204. If another substrate is using the substrate transfer mechanism 204, this also includes the waiting time of the substrate transfer mechanism 204.

[0072] b) Transport time 302 This is the time for the substrate transport mechanism 204 to transport the substrate from in front of the preparation station 220 to in front of the predetermined planarization device R.

[0073] c) Flattening waiting time 303 This is the time from when the planarization apparatus R receives the substrate to when the contact process starts, and includes the time from when the substrate is transferred from the substrate transport mechanism 204 to the planarization apparatus R to when the planarization apparatus R starts the contact process. Furthermore, if the planarization apparatus R is in use, it also includes the waiting time of the planarization apparatus R.

[0074] d) Application time 300 This is the time it takes for composition ML to be applied to the substrate in the preparation station 220. As described above, the sum of the times a) to d) including the application time 300 is called the interval in this embodiment.

[0075] The substrate transport mechanism 204 is used not only to transport the substrate from the preparation station 220 to the planarization device R, but also for other purposes. For example, it is used to transport the substrate after the planarization process to the thermal processing unit 209. Therefore, if the substrate transport mechanism 204 is being used by another substrate being processed in parallel in the planarization system, it is necessary to wait until the substrate transport mechanism 204 becomes available.

[0076] Moreover, the time required for the planarization process in the planarization apparatus R is generally longer than the time required for applying the composition ML in the preparation station 220. Therefore, there may be cases where the substrate applied with the composition ML in the preparation station 220 must wait until the planarization process of the preceding substrate is completed and the planarization apparatus R and the substrate transport mechanism 204 become available.

[0077] In addition, the planarization apparatus R may be temporarily unavailable due to periodic maintenance operations, and standby is also required. Furthermore, if the planarization system includes a plurality of planarization apparatuses R in order to shorten this standby time, the timing at which the substrate coated with the composition ML can be transported to the planarization apparatus R becomes more complicated.

[0078] In this manner, the thickness of the planarization film, which affects the process of manufacturing the final semiconductor device, may vary depending on the condition of the planarization system.

[0079] Therefore, in this embodiment, in order to stabilize the thickness of the planarization film between substrates and thus stabilize the process of manufacturing the final semiconductor device product, the operation of the planarization system is controlled so that the evaporation of the composition is constant between substrates.

[0080] Specifically, a target interval (the time from the start of application to the start of the contact step) is determined in advance for each planarization process performed under the same conditions (e.g., planarization process in the manufacture of the same layer of the same semiconductor device).

[0081] Next, for example, before starting application of the composition ML during the planarization process, a predicted interval, which is a predicted value of the interval, is calculated. Finally, the target interval is compared with the predicted interval to control the timing of starting application of the composition ML or the start time of the contact process. The target interval is determined to be a feasible and short time based on actual values ​​such as past processing times.

[0082] Specific procedures for determining a target interval in advance and controlling the application start timing or the contact step start timing before the start of application of the composition ML during each substrate treatment will be described below.

[0083] First, a method for determining the target interval in advance will be described. As described above, the target interval is a target time from the start of coating to the start of the contact step, which is determined for each identical planarization process. The target interval is determined to be as short as possible based on actual values ​​such as past processing times.

[0084] The target interval is determined, for example, when setting the processing conditions for the planarization process. The processing conditions for the planarization process are called recipes, etc., and specify the amount and arrangement of the composition ML to be applied (hereinafter, referred to as a drop recipe), the time for applying energy to harden the composition ML, etc. Specifically, the target interval is calculated as the sum of the times e) to h) below.

[0085] e) Application time 300 The application time of the composition ML can be calculated from the amount and arrangement of the composition ML to be applied and the operating time of the droplet supply unit DP required to apply it. Therefore, the application time 300 required for application in the target flattening process is calculated from the set values ​​of the amount and arrangement of the composition ML and the actual value (statistical value) of the operating time of the droplet supply unit DP.

[0086] f) Transport waiting time 301 The transfer waiting time 301 is the time until the substrate transfer mechanism 204 becomes available and the operation time of the transfer hand 202 and the like for transferring the substrate from the preparation station 220 to the substrate transfer mechanism 204 .

[0087] Here, the time until the substrate transport mechanism 204 becomes available is not known when the target interval is calculated, and is therefore not included in the target interval. On the other hand, the operation time for transferring the substrate from the preparation station 220 to the substrate transport mechanism 204 is calculated from past performance values ​​(statistical values).

[0088] g) Transport time 302 The transport time 302 is the time required for the substrate transport mechanism 204 to transport the substrate from in front of the preparation station to in front of the planarization apparatus R, and is calculated from the actual values ​​(statistical values) of the past operating times of the target planarization system.

[0089] However, when the planarizing system has a plurality of planarizing apparatuses R, the distance and transport time from the preparation station 220 to the planarizing apparatus R differ depending on the planarizing apparatus R used.

[0090] For this reason, for example, the operation time when using a flattening device R that is located a longer distance from the preparation station 220 is used as the transport time, and when using a flattening device R that is located a shorter distance, the operation time is adjusted by, for example, adding a waiting time.

[0091] h) Flattening wait time 303 The planarization waiting time 303 is the sum of the time from the substrate transport mechanism 204 to the planarization apparatus R to the time until the planarization apparatus R starts contact processing, and is calculated from the actual values ​​(statistical values) of past operation times. Note that the planarization waiting time also includes the waiting time of the planarization apparatus R when it is in use, but is not included in the calculation of the target interval.

[0092] Next, a specific procedure for controlling the start timing (that is, the start timing of application or the start timing of the contact step) performed before the start of application of the composition ML during each substrate treatment in this embodiment will be described.

[0093] That is, in this embodiment, as an example, before application of the composition ML during each substrate processing, a process for determining the application start timing or the contact step start timing is carried out to control the volatilization amount of the composition ML.

[0094] Fig. 5 is a flowchart showing an example of a process for determining the application start timing or the contact step start timing in step S3 and step S4 in Fig. 3. Note that the operation of each step in the flowchart in Fig. 5 is performed sequentially by a CPU or the like as a computer in the control unit 210 executing a computer program stored in a memory.

[0095] First, in step S501, a predicted interval (predicted value) is calculated. The predicted interval (predicted value) predicts the time in the current smoothing system with respect to the times e) to h) of the same items as the target interval.

[0096] Specifically, the sum of the following times e') to h') is calculated as the predicted interval (predicted value). Here, step S501 functions as a calculation step (calculation means) that calculates the predicted value of the interval, which is the time from application of the composition to the start of contact, before the start of application of the composition to the substrate.

[0097] e') Application time 300 The application time of the composition ML is calculated from the amount and arrangement of the composition ML to be applied and the most recent operation time of the droplet supply unit DP required for application. Furthermore, if a waiting time is required before the start of application of the composition ML, such as when calibrating the droplet supply unit DP, the waiting time is subtracted. In other words, the application start timing is advanced taking the waiting time into account.

[0098] f') Transport waiting time 301 The transfer waiting time 301 is calculated as the sum of the time until the substrate transfer mechanism 204 becomes available and the most recent operation time of the transfer hand 202 and the like for transferring the substrate from the preparation station 220 to the substrate transfer mechanism 204 .

[0099] In addition, when the operation schedule of the flattening system is determined in advance, the time until the substrate transport mechanism 204 becomes available is calculated by referring to the operation schedule and adding the waiting time until the substrate transport mechanism 204 becomes available to the transport waiting time 301. In other words, the expected value of the transport waiting time is calculated based on the operation schedule of the transport means.

[0100] g') Transport time 302 The transport time 302 is calculated from the most recent operation time by calculating the time it takes for the substrate transport mechanism 204 to transport the substrate from in front of the preparation station 220 to in front of the planarization device R. Here, if the planarization system has multiple planarization devices R, the transport time is calculated based on the distance from the preparation station 220 to the planarization device R to be used. That is, the expected value of the transport time is calculated based on the position of the shaping means.

[0101] h') Flattening wait time 303 The planarization waiting time 303 is the sum of the time from the substrate transport mechanism 204 to the planarization device R and the time until the planarization device R starts contact processing, and is calculated from the most recent operation time. If a waiting time is required to use the planarization device, the waiting time is also added. In other words, the expected value of the planarization waiting time is calculated based on the operation time immediately before the forming means.

[0102] In this way, the interval for the target value or the predicted value is calculated based on at least one of the application time, the transport wait time, the transport time, and the contact wait time. Also, the application time of the composition ML, which is at least one of the target value and the predicted value, is calculated based on at least one of the amount and arrangement of the composition to be applied and the operating time of the droplet supply unit. Also, the target value is calculated based on the past operating results.

[0103] Next, in step S502, it is determined whether or not the predicted value-target value≧first predetermined value C1 based on the target interval (target value) and the predicted interval (predicted value). If the difference between the predicted value and the target value is equal to or greater than the first predetermined value C1 (Yes in step S502), the process proceeds to step S505, and if No in step S502, the process proceeds to step S503.

[0104] In step S503, it is determined whether or not the target value-the predicted value≧a second predetermined value C2. Here, the second predetermined value C2 is a value different from the first predetermined value C1. If the answer is No in step S503, the flow in FIG. 5 is terminated.

[0105] On the other hand, if the result in step S503 is Yes, the process proceeds to step S504, where the contact start time is adjusted to delay the contact start timing. That is, if the target value is greater than the predicted value by the second predetermined value C2 or more in step S503, the contact start in the flattening device R is delayed in step S504.

[0106] In step S505, the application start time is adjusted to delay the application start timing. That is, the application start of the composition ML is delayed. Then, in step S506, it is determined whether or not the predicted value-target value≧third predetermined value C3. Here, C3>C1. Then, if the answer is Yes in step S506, the process returns to step S501, and if the answer is No in step S506, the flow of FIG. 5 is terminated.

[0107] 6(A) and (B) are schematic diagrams showing an example of control from composition application to the start of contact in this embodiment, and FIG. 6(A) is a diagram for explaining steps S503 and S504.

[0108] In the case shown in Figure 6(A), after the composition ML is applied, the composition ML becomes contactable in the flattening device R after an expected time has elapsed, but the time after application has not reached the time (target value - second specified value C2).

[0109] Therefore, the contact process in the flattening device R is awaited until the time reaches (target value-second predetermined value C2). As a result, the contact process in the flattening device R is started at the timing when the time (target value-second predetermined value C2) has elapsed after the start of application.

[0110] 6B is a diagram for explaining a case where the predicted value is longer than (target value+first predetermined value C1). In such a case, if application is started immediately, the time (target value+first predetermined value C1) will be exceeded before the flattening device R is in a state where it can come into contact with the composition ML after the predicted interval.

[0111] Therefore, application of the composition ML is started after waiting for a time of predicted value-(target value+first predetermined value C1) (for example, after the substrate transport mechanism 204 becomes available). As a result, even in the case shown in Fig. 6(B), the contact step with the composition ML can be performed in the planarization device R at a timing when a time of (target value+first predetermined value C1) has elapsed after application is started.

[0112] In addition, in consideration of the case where the predicted interval does not necessarily predict the accurate time, the waiting time for the start of application may be set to the predicted interval minus a certain time. In that case, when the state similar to that of Fig. 6(A) is reached, the start of the contact step may be delayed in the same manner as in Fig. 6(A).

[0113] Also, in the state of Fig. 6(B), while waiting for the application timing, the state of the planarization system may change, and the predicted interval value may also change. Therefore, in this embodiment, in the case shown in Fig. 6(B), while waiting for the application timing, the predicted interval is successively recalculated and the judgment is updated. That is, in step S506, if it is determined that the predicted value-target value ≥ the third predetermined value C3, the process returns to step S501 and the predicted interval is successively updated.

[0114] In step S504, as described in Fig. 6(A), application of the composition ML is immediately started, and the process waits for the time until the target interval is reached, until the start of the contact step in the flattening device R. On the other hand, in step S505, as described in Fig. 6(B), application of the composition ML is started after waiting for the above-mentioned time, and the process proceeds until the start of the contact step.

[0115] After the respective processes in steps S504 and S504 are completed, the contact step is started and the flow in FIG. 5 is terminated.

[0116] Here, steps S502 to S506 function as a control process (control means). In the control process, when the difference between the predicted value and the target value of the interval is equal to or greater than a predetermined value, the start of application of the composition is delayed. However, the difference between the actual interval and the target value may be controlled to be within a first predetermined value by changing at least one of the application timing, the transport wait time, the transport time, and the contact wait time.

[0117] As described above, according to this embodiment, in either case of Figure 6 (A) or Figure 6 (B), the contact step can be performed when the target interval time has elapsed after the application of composition ML has started.

[0118] In the above, an example of controlling the application start timing or the contact start timing by focusing only on the time of each process has been described. However, the present invention is not limited to this, and for example, the influence of the environment of the place where the substrate passes or is placed (preparation station, substrate transport mechanism, flattening device) on the volatilization may also be taken into consideration.

[0119] For example, the application start timing and the start time of the contact step with the composition ML in the planarization device R may be calculated according to the temperature, humidity, and air pressure of the place where the substrate is placed. Specifically, the temperature, humidity, air pressure, etc., which are the environment of the place where the substrate passes or is placed (preparation station, substrate transport mechanism, planarization device), are constantly measured.

[0120] Also, the degree of influence of each environmental value on volatilization is measured in advance. The target interval assumes the average environment of the planarization system, but when calculating the predicted interval, the predicted interval is corrected based on the measured values ​​of temperature, humidity, air pressure, etc. at that time and their influence. In other words, the predicted value is calculated based on at least one of the temperature, humidity, and air pressure of the places through which the substrate passes.

[0121] As described above, the planarization system and planarization method according to the present embodiment can stabilize the thickness of the planarization film in the planarization process. Note that the molding system according to the present embodiment is not limited to the planarization system as described above, but can also be applied to an imprint system.

[0122] That is, the molding means in this embodiment is not limited to imprinting means in which a flat surface of a mold is brought into contact with a composition on a substrate to mold, but includes imprinting means in which a pattern of a mold is brought into contact with a composition on a substrate to mold.

[0123] Imprint systems are systems that form a pattern of a mold on a substrate and perform a process similar to that of planarization systems: they apply a composition to the substrate and then cure the composition while the mold and substrate are in contact with each other.

[0124] Thereafter, the mold and the substrate are separated to form a pattern film on the substrate. In an imprint system in which the means for applying the composition, the means for imprinting, and the means for transporting the substrate are located in different positions, there are problems similar to those of the planarization system described above, and by applying the present invention, the thickness of the pattern film in the imprint process can be stabilized.

[0125] <Production method> The method for manufacturing an article according to the present embodiment is suitable for manufacturing articles such as microdevices, such as semiconductor devices, and elements having a microstructure.

[0126] A method for manufacturing devices (semiconductor devices, magnetic storage media, liquid crystal display elements, etc.) as products will be described.

[0127] The manufacturing method may include a step of transferring a pattern of a mold onto a surface of a substrate (such as a wafer, a glass plate, or a film-like substrate) using a molding device. Here, the step of transferring the pattern of the mold may include a planarization step. In addition, the substrate is not limited to a single base material, and may include a multi-layer structure.

[0128] It may also include a step of forming a latent image pattern on a photosensitive agent applied to a substrate using the exposure device (a step of exposing the substrate), and a step of developing the substrate on which the latent image pattern has been formed in such a step.

[0129] The manufacturing method further includes a step of processing the substrate before or after the pattern transfer step. For example, the processing step may include a step of removing a residual film of the pattern. It may also include well-known steps such as a step of etching the substrate using the pattern as a mask, a step of cutting out chips from the substrate (dicing), a step of placing the chips on a frame and electrically connecting them (bonding), and a step of sealing with resin (molding).

[0130] In this manner, the method for producing an article in this embodiment includes a molding step in which a mold is brought into contact with the composition by the above-mentioned molding system, and a processing step in which a substrate is processed after the molding step. Furthermore, the method for producing an article in this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to the conventional methods.

[0131] Although the present invention has been described in detail based on the preferred embodiment, the present invention is not limited to the above embodiment, and various modifications are possible based on the spirit of the present invention, and are not excluded from the scope of the present invention. The above embodiment includes the following combinations.

[0132] (Configuration 1) A molding system comprising: a composition application means for applying a composition to a substrate; a molding means for bringing a mold into contact with the composition to perform a molding process; a transport means for transporting the substrate between the composition application means and the molding means; a calculation means for calculating a predicted value of an interval which is the time from application of the composition to the start of the contact; and a control means for, when a difference between the predicted value and a target value of the interval is equal to or greater than a predetermined value, changing at least one of the application timing, transport wait time, transport time, and contact wait time to control so that the difference between an actual interval and the target value is within the predetermined value.

[0133] (Configuration 2) The molding system according to Configuration 1, wherein the control means delays the start of application of the composition when the predicted value is greater than the target value by the first predetermined value or more.

[0134] (Configuration 3) The molding system according to configuration 1 or 2, characterized in that the control means delays the start of the contact when the target value is greater than the predicted value by a second predetermined value or more.

[0135] (Configuration 4) The molding system according to configuration 3, wherein the second predetermined value is different from the first predetermined value.

[0136] (Configuration 5) The molding system according to any one of Configurations 1 to 4, wherein the interval is calculated based on at least one of a coating time, a transport waiting time, a transport time, and a contact waiting time.

[0137] (Configuration 6) A molding system according to any one of configurations 1 to 5, characterized in that at least one of the target value and the predicted value is calculated based on at least one of the amount and arrangement of the composition to be applied and the actual operating time of the droplet supply unit.

[0138] (Configuration 7) The molding system according to any one of configurations 1 to 6, wherein the target value is calculated based on past operation results.

[0139] (Configuration 8) The molding system according to any one of configurations 1 to 7, wherein the predicted value is calculated based on an operation schedule of the conveying means.

[0140] (Configuration 9) The molding system according to any one of configurations 1 to 8, wherein the predicted value is calculated based on a position of the molding means.

[0141] (Configuration 10) The molding system according to any one of configurations 1 to 9, wherein the predicted value is calculated based on the immediately preceding operation time of the molding means.

[0142] (Configuration 11) The molding system according to any one of configurations 1 to 10, wherein the predicted value is calculated based on at least one of the temperature, humidity, and air pressure of the locations through which the substrate passes.

[0143] (Configuration 12) The molding system according to any one of Configurations 1 to 11, wherein the molding means includes an imprinting means for contacting a flat surface of a mold with the composition on the substrate.

[0144] (Configuration 13) The molding system according to any one of Configurations 1 to 11, wherein the molding means includes an imprint means for contacting a pattern of the mold with the composition on the substrate.

[0145] (Method 1) A molding method comprising: a composition application step of applying a composition to a substrate; a molding step of bringing a mold into contact with the composition to perform a molding process; a transport step of transporting the substrate between the composition application step and the molding step; a calculation step of calculating a predicted value of an interval which is the time from application of the composition to the start of the contact; and, if a difference between the predicted value and a target value of the interval is equal to or greater than a predetermined value, a control step of changing at least one of the application timing, transport wait time, transport time, and contact wait time so that the difference between an actual interval and the target value is within the predetermined value.

[0146] (Method 2) A method for producing an article, comprising: a molding step of contacting the composition with the mold and subjecting it to a molding treatment using the molding system according to any one of configurations 1 to 13; and a processing step of processing the substrate after the molding step.

[0147] In order to realize a part or all of the control in the above embodiment, a computer program that realizes the functions of the above embodiment may be supplied to the planarization system or the like via a network or various storage media. Then, a computer (or a CPU, MPU, or the like) in the planarization system or the like may read and execute the program. In this case, the program and the storage medium storing the program constitute the present invention. [Explanation of symbols]

[0148] 1: Substrate ML: Composition W: Base pattern SS: type 100: Flattening system 202: Transport hand 203: Substrate transport container 204: Substrate transport mechanism 205: Alignment mechanism 210: Control unit 211: Circulation department 220: Preparation Station R: Flattening device DP: Droplet supply section

Claims

1. A composition applying means for applying a composition to a substrate; A molding means for contacting the composition with a mold and performing a molding process; a conveying means for conveying the substrate between the composition applying means and the molding means; a calculation means for calculating an expected value of an interval between application of the composition and the start of the contact; and a control means for controlling, when the difference between the predicted value and the target value of the interval is equal to or greater than a predetermined value, at least one of the application timing, the transport wait time, the transport time, and the contact wait time to control so that the difference between the actual interval and the target value is within the predetermined value.

2. 2. The molding system according to claim 1, wherein the control means delays the start of application of the composition when the predicted value is greater than the target value by at least the first predetermined value.

3. 2. The molding system of claim 1, wherein said control means delays the initiation of said contact if said target value is greater than said expected value by more than a second predetermined amount.

4. 4. The molding system of claim 3, wherein the second predetermined value is different from the first predetermined value.

5. 2. The molding system according to claim 1, wherein the interval is calculated based on at least one of a coating time, a transport waiting time, a transport time, and a contact waiting time.

6. 2. The molding system of claim 1, wherein at least one of the target value and the predicted value is calculated based on at least one of the amount and arrangement of the composition to be applied and the operating time performance value of the droplet supply unit.

7. 2. The molding system according to claim 1, wherein the target value is calculated based on past operation results.

8. The molding system according to claim 1 , wherein the predicted value is calculated based on an operation schedule of the conveying means.

9. 2. The molding system according to claim 1, wherein the predicted value is calculated based on a position of the molding means.

10. 2. The molding system according to claim 1, wherein the predicted value is calculated based on a immediately preceding operation time of the molding means.

11. The molding system according to claim 1 , wherein the predicted value is calculated based on at least one of temperature, humidity, and air pressure of a location through which the substrate passes.

12. 2. The molding system of claim 1, wherein the molding means includes an imprinting means for contacting a flat surface of a mold with the composition on the substrate.

13. 2. The molding system of claim 1, wherein the molding means includes imprint means for contacting a pattern of a mold with the composition on the substrate.

14. a composition applying step of applying a composition to a substrate; a molding step of contacting the composition with a mold; a transport step of transporting the substrate between the composition application step and the molding step; calculating an expected value of an interval between application of the composition and the start of the contact; and if the difference between the predicted value and the target value of the interval is equal to or greater than a predetermined value, a control process is performed by changing at least one of the application timing, the transport wait time, the transport time, and the contact wait time so that the difference between the actual interval and the target value is within the predetermined value.

15. A molding process in which the composition is brought into contact with the mold by the molding system according to any one of claims 1 to 13, and a molding process is performed; a processing step of processing the substrate after the molding step; A method for producing an article, comprising the steps of:

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