Display device

Abstract

To provide a technique of manufacturing a display device with high productivity and, to provide a high-definition display device with high color purity.SOLUTION: A high-definition display device with high color purity is provided by adjusting optical path length between a reflective electrode and a light emitting layer by transmitting central wavelength of a color filter layer without performing selective deposition of the light emitting layer. In a light emitting element, a plurality of light emitting layers emitting light of different luminous color are stacked, and as the light-emitting layer is closer to the reflective electrode, the wavelength of emitting luminous color is short. The light emitting device is manufactured without performing selective deposition of the light emitting layer, so that productivity of the light emitting device is high.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to an electroluminescent display device and a method for manufacturing the display device. do. [Background technology]

[0002] In recent years, thin and lightweight display devices (so-called flat panel displays) have become available. Electroluminescence (EL, hereinafter referred to as EL) Display devices are attracting attention.

[0003] EL display devices use light-emitting materials that emit light of different colors in the light-emitting elements used in each pixel. By providing a photo element, full color display can be achieved.

[0004] In such EL display devices, minute electrodes are formed on each pixel by a vapor deposition method using a metal mask. A method is used in which different light-emitting materials are applied in a specific pattern.

[0005] However, contact with the metal mask can cause defects in the shape of the light-emitting element and poor light emission. This is the case, and countermeasures are being studied (see, for example, Patent Document 1). The metal mask is supported on the pixel electrode so that it does not come into contact with the pixel electrode during evaporation. A structure is disclosed in which a spacer is provided. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-126817 Summary of the Invention [Problem to be solved by the invention]

[0007] The method of applying different light-emitting materials to each pixel is complicated, and it is difficult to improve yield and productivity. It is difficult to do so.

[0008] An object of one embodiment of the present invention is to provide a technique for manufacturing a display device with high productivity. do.

[0009] Another object of one embodiment of the present invention is to provide a high-definition display device with high color purity. do. [Means for solving the problem]

[0010] According to one embodiment of the present invention, a reflective electrode and a light-emitting element are connected to each other by a transmission center wavelength of a color filter layer. By adjusting the optical distance between the layers, high-definition with good color purity can be achieved without painting the light-emitting layer separately. The light-emitting element is a laminate of a plurality of light-emitting layers that emit light of different colors, and has reflectivity. The closer the light-emitting layer is to the electrode to which it is connected, the shorter the wavelength of the emitted light color. It is completed.

[0011] One aspect of the present invention is a liquid crystal display device comprising a first pixel including a first color filter layer and a second color filter and a second pixel including a first electrode having a first reflectivity. a second pixel having a second light-emitting element including a second reflective electrode; The first light emitting element and the second light emitting element each have a first reflective electrode and a second reflective electrode. A first light-emitting layer, a charge generating layer, a second light-emitting layer, and a and a light-transmitting electrode, and in the first pixel, a first reflective electrode and a first The optical distance between the first color filter layer and the light-emitting layer is 1 / 4 of the transmission center wavelength of the second color filter layer. In the pixel, the optical distance between the second reflective electrode and the second light-emitting layer is The wavelength is m / 4 times (m is an odd number of 3 or more) the central transmission wavelength of the color filter layer, preferably 3 / 4. The transmission center wavelength of the first color filter layer is equal to the transmission center wavelength of the second color filter layer. It is a shorter display device.

[0012] In the above structure, the wavelength of the emitted color of the first light-emitting layer is equal to or larger than the wavelength of the emitted color of the second light-emitting layer. The second light-emitting element has a second reflective electrode and a first light-emitting layer. A light-transmitting conductive layer may be included between the insulating film and the insulating film.

[0013] One aspect of the present invention is a liquid crystal display device comprising a first pixel including a first color filter layer and a second color filter a second pixel including a third color filter layer, and a third pixel including a third color filter layer; The pixel has a first light-emitting element including a first reflective electrode, and the second pixel has a second reflective electrode. a second light-emitting element including a reflective electrode, and a third pixel including a third reflective electrode; a third light-emitting element including a pole, and the first light-emitting element, the second light-emitting element, and the third light-emitting element The first reflective electrode, the second reflective electrode, and the third reflective electrode are a first light-emitting layer, a charge-generating layer, a second light-emitting layer, a third light-emitting layer, and a charge-generating layer, which are stacked in this order on an electrode having the a first reflective electrode in a first pixel; The optical distance to the first light-emitting layer is 1 / 4 of the transmission center wavelength of the first color filter layer. In the second pixel, the optical distance between the second reflective electrode and the second light-emitting layer is m / 4 times (m is an odd number of 3 or more) the transmission center wavelength of the color filter layer 2, preferably 3 / 4, and in the third pixel, the optical distance between the third reflective electrode and the third light-emitting layer is The distance is preferably n / 4 times (n is an odd number of 3 or more) the transmission center wavelength of the third color filter layer. The transmission center wavelength of the first color filter layer is approximately 5 / 4, and the transmission center wavelength of the second color filter layer is approximately 5 / 4. The transmission center wavelength of the second color filter layer is shorter than that of the third color filter layer. The display device has a wavelength shorter than the central transmission wavelength of the filter layer.

[0014] In the above structure, the wavelength of the emitted color of the first light-emitting layer is equal to or larger than the wavelength of the emitted color of the second light-emitting layer. The wavelength of the emitted light color of the second light-emitting layer is shorter than the wavelength of the emitted light color of the third light-emitting layer. The second light-emitting element has a second reflective electrode, a first light-emitting layer, and a light-transmitting conductive layer between the first and second light-emitting elements, and the third light-emitting element includes a third reflective electrode and A light-transmitting conductive layer is included between the first light-emitting layer and the second light-emitting layer. The conductive layer having a thickness different from that of the light-transmitting conductive layer included in the third light-emitting element. It may also be configured to have: [Effects of the Invention]

[0015] According to one embodiment of the present invention, a display device can be manufactured with high productivity.

[0016] Furthermore, one embodiment of the present invention can provide a high-definition display device.

[0017] Furthermore, one embodiment of the present invention can provide a display device with low power consumption. [Brief explanation of the drawings]

[0018] [Figure 1] 1A and 1B are diagrams illustrating a display device. [Figure 2] 1A and 1B are diagrams illustrating a display device. [Figure 3] 1A and 1B are diagrams illustrating a display device. [Figure 4] 1A and 1B are diagrams illustrating a display device. [Figure 5] 1A and 1B illustrate an example of a usage mode of a display device. [Figure 6] 1A and 1B are diagrams illustrating the structure of a light-emitting element used in an example. [Figure 7] FIG. 10 is a graph showing the relationship between wavelength and transmittance of a color filter layer used in an example. [Figure 8] 10A and 10B are diagrams showing characteristics of display devices fabricated in Examples. DETAILED DESCRIPTION OF THE INVENTION

[0019] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Those skilled in the art will recognize that various changes in form and details may be made without departing from the spirit and scope of the present invention. Therefore, the present invention should be interpreted as being limited to the following description of the embodiments. In the configuration described below, parts that have the same parts or similar functions are not included. The same reference numerals are used in common between different drawings for corresponding parts, and repeated explanations thereof will be omitted.

[0020] (Embodiment 1) In this embodiment mode, one mode of an EL display device will be described with reference to FIGS.

[0021] FIG. 1(A) shows a cross-sectional view of a display portion of a display device of this embodiment mode. 1(B) and FIG. 1(B2) show enlarged views of a part of the cross section shown in FIG. 1(A).

[0022] The display device shown in FIG. 1A includes a first pixel 130a and a second pixel 130b. The first pixel 130a is formed by a first light-emitting element 132a provided on the substrate 100 and a second light-emitting element 132b provided on the counter substrate 12. 8, a first color filter layer provided in an area overlapping with the first light emitting element 132a The second pixel 130b is provided on the substrate 100. The second light emitting element 132b overlaps with the second light emitting element 132b on the opposing substrate 128. and a second color filter layer 134b provided in the region where the first color filter layer 134 is formed.

[0023] In the display device shown in FIG. 1A, the first color filter layer 134a and the second color The first color filter layer 134b transmits light of different wavelengths. 4a and the second color filter layer 134b have different transmission center wavelengths. In this embodiment, the first color is a color of a pixel, and the second color is a color of a pixel. The transmission center wavelength (hereinafter also referred to as λ1) of the color filter layer 134a is The case where the wavelength is shorter than the central transmission wavelength (hereinafter also referred to as λ2) of the filter layer 134b will be described as an example. do.

[0024] In this specification, the transmission center wavelength is in the visible light region (380 nm to 680 nm). In this case, the wavelength region of light transmitted by the color filter layer (preferably, the transmittance is 50% or more) is For example, the wavelength of light passing through a blue color filter layer is When the wavelength range is 380nm to 520nm, the transmission center wavelength is 450nm. Green color When the wavelength range of light transmitted through the filter layer is 510nm to 590nm, the transmission center wavelength is 550nm. In addition, the wavelength range of light transmitted through the red color filter layer is 600nm. In the case of m to 680 nm, the transmission center wavelength is 640 nm.

[0025] The blue and green color filter layers emit light with a long wavelength of around 700 nm. However, the absorption spectrum in the long wavelength region mentioned above may be The absorption spectrum in this region is excluded because it does not affect visibility. Therefore, in this specification and the like, the visible light region is defined as 680 nm or less.

[0026] The first light emitting element 132a and the second light emitting element 132b are spaced apart from each other on the substrate 100. a first reflective electrode 102a and a second reflective electrode 102b disposed on the substrate; The first light emitting element 132a and the second light emitting element 132b each have , and are electrically insulated by an insulating layer 126.

[0027] The first light emitting element 132a is a first light emitting element having a first reflectivity, and a second light emitting element having a second reflectivity, which are stacked in order on the first electrode 102a. The first light-transmitting conductive layer 104a, the first EL layer 106, the charge generation layer 108, and the second The second EL layer 110 and the light-transmitting electrode 112 are included. The light emitting element 132b is a second transparent electrode layered in order on the second reflective electrode 102b. The light-emitting conductive layer 104b, the first EL layer 106, the charge generating layer 108, and the second EL layer 108 are The light-transmitting element 110 includes an L layer 110 and a light-transmitting electrode 112. Therefore, light emitted from the first light-emitting element 132a and the second light-emitting element 132b is transparent. It is emitted from the electrode 112 side.

[0028] The first EL layer 1 is formed between the first light emitting element 132a and the second light emitting element 132b. 06, the charge generating layer 108, the second EL layer 110, and the light-transmitting electrode 112 are Each is common and formed as a continuous film.

[0029] FIG. 1B1 shows an enlarged view of the light-emitting element 132a. FIG. 1B2 shows a schematic diagram of the light-emitting element 132a. An enlarged view of 32b is shown.

[0030] In FIG. 1(B1) and FIG. 1(B2), the first light emitting element 132a and the second light emitting element 1 32b includes a first EL layer 106 including at least a first light-emitting layer 120 and at least a second and a second EL layer 110 including the light-emitting layer 122. The second EL layer 106 and the second EL layer 110 are each made up of a hole injection layer, a hole transport layer, an electron transport layer, and a light emitting layer. Alternatively, the organic EL element may have a laminated structure having functional layers such as an electron injection layer and an electron transport layer.

[0031] The first light-emitting element 132a and the second light-emitting element 132b are formed on a first light-transmitting conductive layer 1. and a second light-transmitting conductive layer 104a having a thickness different from that of the first light-transmitting conductive layer 104a. The conductive layer 104b has a thickness different from that of the conductive layer 104a.

[0032] The first light-transmitting conductive layer 104a can be formed to have a first light-transmitting property by adjusting its thickness. The light emitted by the layer 120 is reflected back by the first reflective electrode 102a. Its role is to adjust the optical path length of the light that has passed through it (also referred to as the first reflected light). The light incident on the first color filter layer 134a directly from the first light-emitting layer 120 (the first The thickness of the first conductive layer 104a having light-transmitting properties is set to 1 / 200. By adjusting the phase of the first incident light and the phase of the first reflected light, the first light-emitting layer 12 Therefore, the light emitting device according to this embodiment can amplify light emitted from an optical path length of 0. Compared with a light-emitting element that is not adjusted, a higher luminance can be obtained when the same current is passed through. In addition, the phases of the first incident light and the first reflected light can be adjusted by the first color filter layer 13. By adjusting the transmission center wavelength of the first pixel 130a to the wavelength of the second pixel 130b, the color purity of the light extracted from the first pixel 130a can be improved. can be improved.

[0033] In addition, the second light-transmitting conductive layer 104b can be formed by adjusting the thickness thereof. The light emitted from the light-emitting layer 122 is reflected by the second reflective electrode 102b. It has the role of adjusting the optical path length of the light that returns (also referred to as the second reflected light). The reflected light is the light ( The second light-transmitting conductive layer 104b By adjusting the film thickness of the second incident light and the second reflected light, the second emitted light Therefore, the light emitting device according to this embodiment has the following features: Compared to a light-emitting element whose optical path length is not adjusted, it has a higher brightness when the same current is applied. The phases of the second incident light and the second reflected light can be obtained by filtering the second color filter. By adjusting the transmission center wavelength of the layer 134b, the light extracted from the second pixel 130b The color purity can be improved.

[0034] More specifically, in the first light-emitting element 132a included in the first pixel 130a, The optical distance between the electrode 102a having the reflectivity and the first light-emitting layer 120 is It is preferable that the wavelength is 1 / 4 of the transmission center wavelength (λ1) of the filter layer 134a. In the second light emitting element 132b included in the element 130b, the electrode 10 having the second reflectivity The optical distance between the second light emitting layer 122 and the second color filter layer 134b is It is preferable to set it to 3 / 4 of the central wavelength (λ2).

[0035] The optical distance between the first reflective electrode 102a and the first light-emitting layer 120 is preferably More precisely, the first reflective electrode 102a and the light-emitting region of the first light-emitting layer 120 However, it is not necessary to strictly determine the position of the light-emitting region in the light-emitting layer. It is difficult to realize the above effect by assuming that an arbitrary position in the light-emitting layer is the light-emitting region. That is, the first reflective electrode 102a and the first light-emitting layer 1 The optical distance between the first reflective electrode 102a and the first light-emitting layer 120 is the distance from the surface of the first reflective electrode 102a to the lower surface of the first light-emitting layer 101; The distance between the second reflective electrode 102 and the upper surface of the second reflective electrode 102 may be equal to or less than the distance to the upper surface of the second reflective electrode 102. b and the optical distance between the second light-emitting layer 122 and the third reflective electrode 102 (described later). The same applies to the optical distance between c and the third light emitting layer 124.

[0036] The emission spectrum from the first light-emitting layer 120 is different from that of the first color filter layer 134a. It is preferable that the maximum peak is in a wavelength region that exhibits the same color as the transmission center wavelength. When the first color filter layer 134a has a transmission center wavelength in the blue region (for example, When the center wavelength is 450 nm, the emission spectrum from the first light-emitting layer 120 is It is preferable that the maximum peak is in the region of 0 nm or more and 470 nm or less.

[0037] Similarly, the emission spectrum from the second light-emitting layer 122 is It is preferable that the maximum peak is in a wavelength region that exhibits the same color as the transmission center wavelength of the For example, when the second color filter layer 134b has a transmission center wavelength in the green region (for example, When the super central wavelength is 550 nm, the emission spectrum from the second light-emitting layer 122 is It is preferable that the maximum peak is in the region of 20 nm or more and 550 nm or less.

[0038] In this embodiment, the transmission center wavelength of the first color filter layer 134a is Since the wavelength is shorter than the central transmission wavelength of the second color filter layer 134b, the The wavelength of the emitted color is preferably shorter than the wavelength of the emitted color of the second light-emitting layer 122.

[0039] In addition, the first light emitting element 132a includes a first reflective electrode 102a and a first The optical distance from the light-emitting layer 120 is set to 1 / (λ1) of the transmission center wavelength of the first color filter layer 134a. The optical distance between the second light-emitting layer 122 and the light-transmitting electrode 112 is set to 1 / 4. - The filter layer 134b has a transmission center wavelength (λ2) that is ¼ of the wavelength, and the electrode has a first reflectivity. The optical distance between the first color filter layer 134a and the light-transmitting electrode 112 is By setting the transmission center wavelength (λ1), a cavity effect can be obtained.

[0040] When the first light emitting element 132a is adjusted to the above conditions, the second reflective electrode 102b and the second light-emitting layer 122 is set to the transmission center wavelength ( In the second light emitting element 132b, the second light emitting layer 122 and the light-transmitting layer 132b are also The optical distance between the electrode 112 and the second color filter layer 134b is set to the center wavelength (λ 2) 1 / 4, the optical characteristic between the second reflective electrode 102b and the light-transmitting electrode 112 The distance is the transmission center wavelength (λ2) of the second color filter layer 134b, so the cavity effect The cavity effect further improves color purity.

[0041] The structure of the display device shown in FIG. 1(A) will be explained below with more specific materials. The element configuration and manufacturing method described here are merely examples and do not necessarily represent the gist of the present embodiment. Other known configurations, materials, and manufacturing methods can be applied within the scope that does not impair the present invention.

[0042] The substrate 100 may be made of plastic (organic resin), glass, quartz, or the like. Examples of plastics include polycarbonate, polyarylate, and polyethylene. The substrate 100 may be made of a material such as a plastic. The use of the substrate 100 is preferable because it can reduce the weight of the display device. Sheets with high barrier properties against water vapor and high heat dissipation properties (e.g., Diamond Dry) A sheet containing DLC ​​(diamond-like carbon) can also be used.

[0043] Although not shown, an inorganic insulator may be provided on the substrate 100. It functions as a protective layer and a sealing film that protects against external contaminants such as water. By providing the light emitting element, deterioration of the light emitting element can be reduced, and the durability and life of the display device can be improved. can.

[0044] As the inorganic insulator, a single layer or a laminated layer of a nitride film and a nitride oxide film can be used. In general, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, oxide It is formed by CVD method, sputtering method, etc. using aluminum nitride etc. according to the material. Preferably, it is formed by the CVD method using silicon nitride. The thickness of the insulating material may be about 100 nm or more and 1 μm or less. aluminum oxide film, DLC film, nitrogen-containing carbon film, film containing zinc sulfide and silicon oxide (ZnS SiO2 film) may also be used.

[0045] Alternatively, a thin glass substrate can be used as the inorganic insulator. A glass substrate having a thickness of 100 μm or more and 100 μm or less can be used.

[0046] In addition, a metal plate is provided on the lower surface of the substrate 100 (the surface opposite to the surface on which the light emitting element is provided). In addition, when an inorganic insulator is provided, a metal plate may be used instead of the substrate 100. There is no particular limitation on the thickness of the metal plate, but for example, a thickness of 10 μm or more and 200 μm or less is used. In this case, the weight of the display device can be reduced, which is preferable. Although not limited to, metals such as aluminum, copper, nickel, etc., or aluminum alloys or Preferably, a metal alloy such as stainless steel can be used.

[0047] The metal plate and the substrate 100 can be bonded together by an adhesive layer. Visible light curable, ultraviolet curable, or heat curable adhesives can be used. The adhesive material can be, for example, epoxy resin, acrylic resin, silicone resin, pheno The adhesive layer may contain a water-absorbing material that acts as a desiccant.

[0048] Metal plates have low water permeability, so providing a metal plate prevents moisture from entering the light-emitting element. Therefore, by providing a metal plate, it is possible to suppress deterioration caused by moisture. It is possible to provide a highly reliable display device.

[0049] The first reflective electrode 102a and the second reflective electrode 102b are The reflector is provided on the opposite side of the light source and is made of a reflective material. Materials include aluminum, gold, platinum, silver, nickel, tungsten, chromium, and molyb. Metallic materials such as nickel, iron, cobalt, copper, or palladium can be used. , aluminum and titanium alloy, aluminum and nickel alloy, aluminum and neodymium Alloys containing aluminum (aluminum alloys), such as copper alloys, and silver-copper alloys, such as silver-copper alloys. An alloy containing silver and copper is preferable because of its high heat resistance. By laminating a metal film or a metal oxide film in contact with the aluminum alloy film, the aluminum alloy The oxidation of the gold film can be suppressed. The metal film and metal oxide film can be made of titanium, Titanium oxide is one example. The above materials are abundant in the earth's crust and are inexpensive. This is preferable because it can reduce the manufacturing cost of the light-emitting element.

[0050] In this embodiment, the electrode 102a having the first reflectivity and the electrode 102b having the second reflectivity are The following description will be given taking as an example the case where the electrode 102b is used as an anode of a light-emitting element. The form is not limited to this.

[0051] The first light-transmitting conductive layer 104a and the second light-transmitting conductive layer 104b are It is formed by a single layer or a laminated layer using a material that is light-transmitting. Examples of materials having this include indium oxide, indium tin oxide, indium oxide zinc oxide, Zinc oxide, zinc oxide doped with gallium, graphene, etc. can be used.

[0052] In addition, as the conductive layer having light transmission, a conductive material containing a conductive macromolecule (also called a conductive polymer) is used. The conductive polymer can be formed using a conductive composition. For example, polyaniline or its derivatives, polypi or its derivatives, polythiophene (PEDOT) or its derivatives, or aniline Copolymers of two or more of phosphorus, pyrrole and thiophene, or derivatives thereof, are also available. It can be obtained.

[0053] The first reflective electrode 102a, the second reflective electrode 102b, and The first light-transmitting conductive layer 104a and the second light-transmitting conductive layer 104b are It can be processed into a desired shape using photolithography and etching processes. Therefore, it is possible to form a fine pattern with good controllability, and to obtain a high-definition display device. It is possible.

[0054] In addition, the first light-transmitting conductive layer 104a and the second light-transmitting conductive layer 104b are By providing the light-transmitting conductive layer independently for each pixel, it is possible to prevent the light-transmitting conductive layer from being damaged when the film thickness of the light-transmitting conductive layer is very thick or when the light-transmitting conductive layer is too thin. Even if the conductive layer has high conductivity, crosstalk can be prevented.

[0055] On the first light-transmitting conductive layer 104a and the second light-transmitting conductive layer 104b, The insulating layer 126 having an opening is formed, and the first EL layer 106 is formed with a first light-transmitting layer in the opening. The light-transmitting conductive layer 104a and the light-transmitting conductive layer 104b are in contact with each other. The insulating layer 126 is made of an organic insulating material such as polyimide, acrylic, polyamide, or epoxy, or The first light-transmitting conductive layer is formed by using an inorganic insulating material. Openings are formed in the second light-transmitting conductive layer 104a and the second light-transmitting conductive layer 104b, respectively. It is preferable that the side wall of the opening is formed as an inclined surface having a continuous curvature. The insulating layer 126 may have a taper or may be inversely tapered.

[0056] The first EL layer 106 may include at least the first light-emitting layer 120. a layer containing a substance with high hole transporting properties, a layer containing a substance with high electron transporting properties, a layer containing a substance with high hole injection properties, a layer containing a material with high electron injection properties; a layer containing a bipolar material (hole transporting and electron A layered structure can be constructed by appropriately combining layers containing a material with high transport properties. For example, the first EL layer 106 may include a hole injection layer, a hole transport layer, a first light-emitting layer 120, an electron transport layer, a hole transport layer, a hole injection layer, a hole transport ... The first anti-reflection layer may have a laminated structure of a transport layer and an electron injection layer. When the reflective electrode 102a and the second reflective electrode 102b are used as cathodes, In this case, the layers are, in order from the cathode side, an electron injection layer, an electron transport layer, a first light-emitting layer 120, a hole transport layer, The hole injection layer may have a laminated structure.

[0057] The hole injection layer is a layer containing a substance with high hole injection properties. For example, molybdenum oxide, titanium oxide, vanadium oxide, rhenium oxide, ruthenium oxide, ammonium oxide, chromium oxide, zirconium oxide, hafnium oxide, tantalum oxide, Metal oxides such as silver oxide, tungsten oxide, and manganese oxide can be used. In addition, phthalocyanine (abbreviated as HPc), copper(II) phthalocyanine (abbreviated as CuPc Phthalocyanine compounds such as

[0058] In addition, the low molecular weight organic compound 4,4',4''-tris(N,N-diphenylamino) ) triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl) (N-phenylamino)triphenylamine (abbreviation: MTDATA), 4 ,4'-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl DPAB, 4,4'-bis(N-{4-[N'-(3-methylphenyl)- N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviated as DNTP D), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino] 3-[N-(9-phenylcarbazol-3-yl)benzene (abbreviation: DPA3B) )-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3, 6-Bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9- Phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-( 9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: P Aromatic amine compounds such as CzPCN1) can be used.

[0059] Furthermore, polymeric compounds (oligomers, dendrimers, polymers, etc.) can also be used. For example, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriflate) Phenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl (N'-phenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide (abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bi Examples include polymer compounds such as [poly(phenyl)benzidine] (abbreviation: Poly-TPD). In addition, poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), polyaniline / poly(styrene sulfonate) (PAni / PS A polymer compound to which an acid such as methyl methyl stearate (S) is added can be used.

[0060] In particular, as a hole injection layer, an organic compound having high hole transport properties is used which contains an acceptor substance. It is preferable to use a composite material containing an acceptor substance in a substance with high hole transporting properties. By using a composite material with this structure, the hole injection from the anode is improved, and the driving These composite materials are composed of a material with high hole transporting ability and a material with high acceptor ability. The hole injection layer can be formed by co-evaporating the composite material. By forming this, hole injection from the anode to the first EL layer 106 becomes easy.

[0061] The organic compounds used in the composite materials include aromatic amine compounds, carbazole derivatives, aromatic Various compounds such as aromatic hydrocarbons and polymer compounds (oligomers, dendrimers, polymers, etc.) As the organic compound used for the composite material, a compound having a high hole transporting property can be used. It is preferable that the organic compound is a low-molecular-weight organic compound. -6 cm 2 Hole transfer above / Vs However, it is preferable that the material has a higher hole transporting property than the electron transporting property. In the following, organic compounds that can be used in composite materials will be described. The compounds are specifically listed below.

[0062] Examples of organic compounds that can be used in composite materials include TDATA and MTDATA. , DPAB, DNTPD, DPA3B, PCzPCA1, PCzPCA2, PCzPCN 1,4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl 4-phenyl-[1,1'-biphenyl]-4,4'-diamine (TPD) 4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP) ) and other aromatic amine compounds, such as 4,4'-di(N-carbazolyl)biphenyl (abbreviation: C BP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: T CPB), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazo CzPA, 9-phenyl-3-[4-(10-phenyl-9-anthryl )phenyl]-9H-carbazole (abbreviation: PCzPA), 1,4-bis[4-(N-carbazole) Carbazole derivatives such as [(carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene A conductor may be used.

[0063] In addition, 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t- BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9 ,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-t ert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: tB uDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10- Diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene ( Abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 9,10-bis[2-(1-naphthyl)phenyl]-2-tert -butylanthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene , 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, and other aromatic compounds Aromatic hydrocarbon compounds can be used.

[0064] Furthermore, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10, 10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis [(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, Thracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-buthylene) (ethyl)perylene, pentacene, coronene, 4,4'-bis(2,2-diphenylvinyl) Biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2-diphenylvinyl) Aromatic hydrocarbon compounds such as diphenylanthracene (abbreviation: DPVPA) can be used. can.

[0065] The electron acceptor is 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroethylene. Organic compounds such as fluoroquinodimethane (abbreviated as F4-TCNQ) and chloranil, and transition metals In addition, metal oxides belonging to groups 4 to 8 of the periodic table can be used. Specifically, vanadium oxide, niobium oxide, tantalum oxide, Chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide are electrically Among them, molybdenum oxide is particularly stable in the atmosphere and has a high molecular acceptability. It is preferred because it has low moisture content and is easy to handle.

[0066] In addition, the above-mentioned polymer compounds such as PVK, PVTPA, PTPDMA, and Poly-TPD A composite material may be formed using the above-mentioned electron acceptor and used in the hole injection layer.

[0067] When the first EL layer 106 is provided with a layer containing the above-described composite material, The optical path length of the first reflected light may be adjusted by adjusting the thickness of the layer. The first light-transmitting conductive layer 104a is not necessarily provided.

[0068] The hole transport layer is a layer containing a substance with high hole transport properties. For example, NPB, TPD, BPAFLP, 4,4'-bis[N-(9,9-dimethylfluorenyl)- [2-(2-phenyl-2-yl)-N-phenylamino]biphenyl (abbreviation: DFLDPBi), 4, 4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino] ]biphenyl (abbreviation: BSPB) or other aromatic amine compounds can be used. The substances mentioned are mainly 10 -6 cm 2 / Vs or more. Any substance other than these may be used as long as it has a higher hole transporting property than an electron transporting property. The layer containing a substance with a high hole transporting property may be a single layer or may be two or more layers containing the above substance. It may also be laminated on top.

[0069] The hole transport layer may contain carbazole derivatives such as CBP, CzPA, and PCzPA, Anthracene derivatives such as t-BuDNA, DNA, and DPAnth may also be used.

[0070] In addition, the hole transport layer is made of high-quality materials such as PVK, PVTPA, PTPDMA, and Poly-TPD. Molecular compounds can also be used.

[0071] The first light-emitting layer 120 is a layer containing a light-emitting organic compound. For example, a fluorescent compound that emits fluorescence or a phosphorescent compound that emits phosphorescence can be used. can.

[0072] Examples of fluorescent compounds that can be used in the first light-emitting layer 120 include compounds that emit blue light. As a material, N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N, N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H- Carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenyl amine (abbreviation: YGAPA), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl)- (phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA) In addition, N-(9,10-diphenyl-2-phenyl)-2-phenyl-1,2-diphenyl-2,2-di ... N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAP) A), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]- N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N -(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4 -phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1'-biphenyl)] (phenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenyl Nylenediamine (abbreviation: 2DPABPhA), N-[9,10-bis(1,1'-biphenyl)] 4-(9H-carbazol-9-yl)phenyl]-N-[4-(9H-carbazol-9-yl)phenyl]-N- Phenylanthracene-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenyl Examples include anthracen-9-amine (abbreviation: DPhAPhA). As the luminescent material, rubrene, 5,12-bis(1,1'-biphenyl-4-yl)-6 , 11-diphenyltetracene (abbreviation: BPT), etc. Also, red light emission The material was N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5, 11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N' -Tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,1 0-diamine (abbreviation: p-mPhAFD), etc.

[0073] Furthermore, examples of phosphorescent compounds that can be used in the first light-emitting layer 120 include blue-based Bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]Iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6) , bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium (III) Picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trimethylsilyl) (Fluoromethyl)phenyl]pyridinato-N,C 2’}Iridium(III) picolinar Ir(CF3ppy)2(pic)), bis[2-(4',6'-difluoro Phenyl)pyridinato-N,C 2’ ]Iridium(III) acetylacetonate (abbreviation :FIr(acac)) and the like. In addition, tris(2 -Phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: Ir(ppy)3) , bis(2-phenylpyridinato-N,C 2’ ) Iridium(III) acetylacetonate Ir(ppy)2(acac)), bis(1,2-diphenyl-1H-benzo[a]pyridine Iridium(III) acetylacetonate (abbreviation: Ir(pbi)2 (acac)), bis(benzo[h]quinolinato)iridium(III) acetylacetonate Ir(bzq)2(acac)), tris(benzo[h]quinolinato)i Lithium(III) (abbreviation: Ir(bzq)3) and other compounds emit yellow light. The material was bis(2,4-diphenyl-1,3-oxazolato-N,C 2’ ) Irijiu Ir(III) acetylacetonate (abbreviation: Ir(dpo)2(acac)), bis[2 -(4'-perfluorophenylphenyl)pyridinato]iridium(III) acetyl Acetonate (abbreviation: Ir(p-PF-ph)2(acac)), bis(2-phenylbenzyl) N,C 2’) Iridium(III) acetylacetonate (abbreviation: Ir (bt)2(acac)), (acetylacetonato)bis[2,3-bis(4-fluoro Iridium(III) (abbreviation: Ir(Fdppr- Me)2(acac)), (acetylacetonato)bis{2-(4-methoxyphenyl) -3,5-dimethylpyrazinato}iridium(III) (abbreviation: Ir(dmmoppr) 2(acac)) and other materials. Orange-emitting materials include tris(2-phenanthroline). N,C quinolinato 2’ ) Iridium(III) (abbreviation: Ir(pq)3), bis( 2-Phenylquinolinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation Name: Ir(pq)2(acac)), (acetylacetonato)bis(3,5-dimethyl- 2-phenylpyrazinato)iridium(III) (abbreviation: Ir(mppr-Me)2(a cac)), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenyl Rupirazinato)iridium(III) (abbreviation: Ir(mppr-iPr)2(acac) ) and the like. Red light-emitting materials include bis[2-(2'-benzo[4, 5-α]thienyl)pyridinato-N,C 3’ ]Iridium(III) acetylacetoner Ir(btp)2(acac)), bis(1-phenylisoquinolinato-N, C 2’ ) Iridium(III) acetylacetonate (abbreviation: Ir(piq)2(aca c)), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxa [Ir(Fdpq)2(acac)], (acetyl Acetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation : Ir(tppr)2(acac)), (dipivaloylmethanato)bis(2,3,5-trimethylisothiazolinone) Triphenylpyrazinate)iridium(III) (abbreviation: Ir(tppr)2(dpm)) , 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin Examples include organometallic complexes such as platinum(II) phosphorus (abbreviated as PtOEP). Acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: Tb(a cac)3(Phen)), tris(1,3-diphenyl-1,3-propanedionato) (Monophenanthroline) europium(III) (abbreviation: Eu(DBM)3(Phen )), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monof phenanthroline) europium(III) (abbreviation: Eu(TTA)3(Phen)) Rare earth metal complexes emit light from rare earth metal ions (electron transitions between different multiplicities). Therefore, it can be used as a phosphorescent compound.

[0074] The first light-emitting layer 120 may be formed by adding the above-mentioned light-emitting organic compound (guest material) to other The host material may be dispersed in a substance (host material). It can be used as a luminescent material, and has a higher lowest unoccupied molecular orbital (LUMO) level than the luminescent material. It is preferable to use a substance with a low occupied molecular orbital level (HOMO level).

[0075] Specifically, the host material is tris(8-quinolinolato)aluminum(III). (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III) ( Abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium (I I) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenyl) bis(8-quinolinolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc ( II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc (I I) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc (I I) (abbreviation: ZnBTZ), metal complexes such as 2-(4-biphenylyl)-5-(4-te rt-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-biphenyl bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl ]benzene (abbreviation: OXD-7), 3-(4-biphenylyl)-4-phenyl-5-(4 -tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 2,2' ,2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) dazole (abbreviated as TPBI), bathophenanthroline (abbreviated as BPhen), Heterocyclic compounds such as proine (abbreviated as BCP) and 9-[4-(10-phenyl-9-azathioprine) 3,6-diphenyl- 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation :DPCzPA), 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation :DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-te rt-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9,9'-Bianthryl (abbreviation: BANT), 9,9'-(stilbene-3,3'-diyl) Diphenanthrene (DPNS), 9,9'-(stilbene-4,4'-diyl) ) Diphenanthrene (abbreviation: DPNS2), 3,3',3''-(benzene-1,3,5 -triyl)tripylene (abbreviation: TPB3), 9,10-diphenylanthracene (abbreviation: :DPAnth), condensed aromatic compounds such as 6,12-dimethoxy-5,11-diphenylchrysene Aromatic compounds, N,N-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]

[0023] -9H-carbazol-3-amine (abbreviation: CzA1PA), 4-(10-phenyl N,9-diphenyl-9-anthryl)triphenylamine (abbreviation: DPhPA), N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3- Amine (abbreviation: PCAPA), N,9-diphenyl-N-{4-[4-(10-phenyl -9-anthryl)phenyl]phenyl}-9H-carbazol-3-amine (abbreviation: P CAPBA), N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl- 9H-Carbazol-3-amine (abbreviation: 2PCAPA), NPB (or α-NPD) Aromatic amine compounds such as TPD, DFLDPBi, and BSPB can be used. do.

[0076] In addition, multiple host materials can be used. For example, A substance that suppresses crystallization, such as amine, may be further added. To make the transfer more efficient, NPB, Alq, or the like may be further added.

[0077] By dispersing the guest material in the host material, the crystallinity of the first light-emitting layer 120 is improved. In addition, it is possible to suppress concentration quenching caused by a high concentration of the guest material. It is possible.

[0078] Furthermore, a polymer compound can be used as the first light-emitting layer 120. Specifically, blue As a light-emitting material in this system, poly(9,9-dioctylfluorene-2,7-diyl) (abbreviation: PFO), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,5 -dimethoxybenzene-1,4-diyl)] (abbreviation: PF-DMOP), poly{(9,9 -dioctylfluorene-2,7-diyl)-co-[N,N'-di-(p-butylphenyl) (Trimethyl)-1,4-diaminobenzene] (abbreviation: TAB-PFH). In addition, green light-emitting materials include poly(p-phenylene vinylene) (abbreviation: PPV), poly(phenylene vinylene) and poly(phenylene vinylene). [(9,9-dihexylfluorene-2,7-diyl)-alt-co-(benzo[2, 1,3]thiadiazole-4,7-diyl)] (abbreviation: PFBT), poly[(9,9-di Octyl-2,7-divinylenefluorenylene)-alt-co-(2-methoxy-5- (2-ethylhexyloxy)-1,4-phenylene). As a red light-emitting material, poly[2-methoxy-5-(2'-ethylhexoxy)-1, 4-phenylenevinylene] (abbreviation: MEH-PPV), poly(3-butylthiophene-2 ,5-diyl) (abbreviation: R4-PAT), poly{[9,9-dihexyl-2,7-bis( 1-cyanovinylene)fluorenylene]-alt-co-[2,5-bis(N,N'-di phenylamino)-1,4-phenylene]}, poly{[2-methoxy-5-(2-ethyl hexyloxy)-1,4-bis(1-cyanovinylenephenylene)]-alt-co-[ 2,5-bis(N,N'-diphenylamino)-1,4-phenylene]}(abbreviation: CN- PPV-DPD) and others.

[0079] The first EL layer 106 may have a structure including two or more light-emitting layers.

[0080] The electron transport layer is a layer containing a substance with high electron transport properties. For example, tris(8-quinolinolato)aluminum (abbreviation: Alq), tris(4-methyl Almq3, bis(10-hydroxybenzoyl)-8-quinolinolatoaluminum (abbreviation: Almq3) Benzo[h]quinolinato)beryllium (abbreviation: BeBq2), bis(2-methyl-8-quinolinato)beryllium (abbreviation: BeBq2), linolato)(4-phenylphenolato)aluminum (abbreviation: BAlq), etc. In addition, metal complexes having a bis[2- (2-hydroxyphenyl)benzoxazolato]zinc (abbreviation: Zn(BOX)2), Bis[2-(2-hydroxyphenyl)benzothiazolato]zinc (abbreviated as Zn(BTZ)2 Metal complexes having oxazole or thiazole ligands such as In addition to metal complexes, 2-(4-biphenylyl)-5-(4-tert-butyl) phenyl)-1,3,4-oxadiazole (abbreviation: PBD) and 1,3-bis[5- (p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene OXD-7, 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butyl ... t-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), bathophenanthro Phosphorus (abbreviated as BPhen) and bathocuproine (abbreviated as BCP) can also be used. The substances mentioned here are mainly 10-6 cm 2 / Vs or more. The electron transport layer may be a single layer or may be a laminate of two or more layers made of the above-mentioned materials. It may also be the same as the above.

[0081] The electron injection layer is a layer containing a substance with high electron injection properties. Umium, calcium, lithium fluoride, cesium fluoride, calcium fluoride, lithium oxide Alkali metals, alkaline earth metals, or compounds thereof, such as Also, rare earth metal compounds such as erbium fluoride can be used. The above-mentioned materials for forming the electron transport layer can also be used.

[0082] The charge generating layer 108 generates electric charges by applying a voltage to the light emitting element, and the electric charges are transferred to the EL layer on the cathode side. It has the function of injecting holes and injecting electrons into the EL layer on the anode side.

[0083] The charge generation layer 108 can be formed of the above-mentioned composite material. It may also be a laminated structure of a layer made of a composite material and a layer made of another material. The layer may be a layer containing an electron donating material and a material with high electron transporting properties, or a layer containing a transparent conductive film. A light-emitting element having such a structure can be used. Problems such as migration and quenching are unlikely to occur, and the range of materials to be selected is wide, resulting in high luminous efficiency and long life. It is easy to make a light-emitting element that has both phosphorescence and long life. On the other hand, it is also easy to obtain fluorescent light.

[0084] As shown in Figure 1, by placing a charge generating layer between stacked EL layers, the current density can be kept low. This allows for a device that is high in brightness and has a long lifespan. The bottom can be made smaller, allowing for uniform light emission over a large area.

[0085] The second EL layer 110 may include at least the second light-emitting layer 122. a layer containing a substance with high electron transport properties, a layer containing a substance with high hole injection properties, a layer containing a substance with high electron injection properties; a layer containing a bipolar substance (having hole transport properties and electron transport properties) It is possible to form a laminated structure by appropriately combining layers containing high-temperature substances. The second EL layer 106 may have the same structure as the first EL layer 106, or may have a stacked structure different from that of the first EL layer 106. For example, the second EL layer 110 may have a structure including a hole injection layer, a hole transport layer, and a , the second light-emitting layer 122, the electron transport layer, the electron injection buffer layer, the electron relay layer, and the light-transmitting The electrode 112 may have a laminated structure including a composite material layer in contact with the electrode 112. The second EL layer 110 may be configured to include two or more light-emitting layers.

[0086] By providing a composite material layer in contact with the light-transmitting electrode 112, it is possible to When the light-transmitting electrode 112 is formed using the same, the second EL layer 110 is damaged. The composite material layer is preferably an organic layer having a high hole transporting property. A composite material in which an acceptor substance is contained in a compound can be used.

[0087] Furthermore, by providing an electron injection buffer layer, the injection barrier between the composite material layer and the electron transport layer is reduced. The walls can be relaxed, allowing electrons generated in the composite layer to be easily injected into the electron transport layer. It is possible.

[0088] The electron injection buffer layer contains alkali metals, alkaline earth metals, rare earth metals, and Compounds of alkali metal compounds (oxides such as lithium oxide, halides, lithium carbonate and carbonates such as cesium carbonate), alkaline earth metal compounds (oxides, halides, carbonates), or compounds of rare earth metals (including oxides, halides, and carbonates) It is possible to use a substance having high electron injection properties, such as the following.

[0089] In addition, the electron injection buffer layer is formed by containing a substance with high electron transport properties and a donor substance. In this case, the mass ratio of the material to the substance with high electron transport properties is 0.001 or more and 0.1 or less. It is preferable to add a donor substance in the range of 100 to 1500. As the donor substance, an alkali metal , alkaline earth metals, rare earth metals, and their compounds (alkali metal compounds (lithium oxide) oxides of lithium, halides, carbonates such as lithium carbonate and cesium carbonate), Alkali earth metal compounds (including oxides, halides, and carbonates) or rare earth metal compounds In addition to compounds (including oxides, halides, and carbonates), tetrathianaphthacene (abbreviated as T Organic compounds such as TN), nickelocene, and decamethylnickelocene can also be used. As the substance having a high electron transporting property, the same material as the material for the electron transporting layer described above is used. It can be formed by

[0090] Furthermore, it is preferable to form an electron relay layer between the electron injection buffer layer and the composite material layer. Although it is not always necessary to provide an electron relay layer, it is preferable to provide an electron relay layer having high electron transport properties. By providing the layer, it becomes possible to quickly send electrons to the electron injection buffer layer.

[0091] The structure in which the electron relay layer is sandwiched between the composite material layer and the electron injection buffer layer is The acceptor material contained in the electron injection buffer layer and the donor material contained in the electron injection buffer layer are mutually exclusive. The structure is such that it is difficult for the molecules to interact with each other and inhibit each other's functions. can prevent the rise.

[0092] The electron relay layer contains a substance with high electron transport properties, and the LUMO level of the substance with high electron transport properties is is the LUMO level of the acceptor material in the composite material layer and the LUMO level of the electron transport material in the electron transport layer. The electron relay layer is formed so that the LUMO level is between that of the material with high electron transport properties. When the composite material layer contains a donor material, the donor level of the donor material also increases. The LUMO level of the acceptor material and the LUMO level of the highly electron-transporting material contained in the electron transport layer The specific energy level is between the MO level and the electronic relay. The LUMO level of the highly electron transporting substance contained in the layer is -5.0 eV or higher, preferably -5 It is recommended to set it to between 0.0eV and -3.0eV.

[0093] The electron relay layer contains a material with high electron transport properties, such as a phthalocyanine-based material or a metal. It is preferred to use metal complexes with -oxygen bonds and aromatic ligands.

[0094] The phthalocyanine materials contained in the electron relay layer are specifically CuPc, SnPc (Phthalocyanine tin(II) complex), ZnPc(Ph thalocyanine zinc complex), CoPc(Cobalt(I I) phthalocyanine, β-form), FePc (Phthalocyanine, β-form) anine Iron) and PhO-VOPc(Vanadyl 2,9,16,23- tetraphenoxy-29H,31H-phthalocyanine) It is preferable to use either

[0095] The metal complexes having a metal-oxygen bond and an aromatic ligand contained in the electron relay layer include metals It is preferable to use a metal complex having a metal-oxygen double bond. Because it has acceptor properties (the ability to easily accept electrons), electron transfer (donation and receipt) is easier. In addition, metal complexes with metal-oxygen double bonds are considered to be stable. Therefore, by using a metal complex having a metal-oxygen double bond, it is possible to realize a light-emitting device at a low voltage. This allows for more stable driving.

[0096] As a metal complex having a metal-oxygen bond and an aromatic ligand, a phthalocyanine-based material is preferred. Specifically, VOPc (vanadyl phthalocyanine), SnO Pc(Phthalocyanine tin(IV) oxide complex) and TiOPc (Phthalocyanine titanium oxide co complex) is a molecule in which the metal-oxygen double bond acts on other molecules. This is preferred because it is easy to do and has high acceptor properties.

[0097] The above-mentioned phthalocyanine-based material preferably has a phenoxy group. Specifically, a phthalocyanine derivative having a phenoxy group, such as PhO-VOPc, is preferred. The phthalocyanine derivative having a phenoxy group is soluble in a solvent. It has the advantage of being easy to handle when forming a light-emitting element. This has the advantage that maintenance of the device used for film formation becomes easier.

[0098] The electron relay layer may further contain a donor substance. Alkali metals, alkaline earth metals, rare earth metals and their compounds (alkali metal compounds (oxides) Contains oxides such as lithium, halides, and carbonates such as lithium carbonate and cesium carbonate ), alkaline earth metal compounds (including oxides, halides, and carbonates), or rare earth metals In addition to compounds (including oxides, halides, and carbonates), tetrathianaphthacene (abbreviated Organic compounds such as nickelocene, decamethylnickelocene, etc. can be used. By including these donor substances in the electron relay layer, electron transfer becomes easier. This makes it possible to drive the light emitting element at a lower voltage.

[0099] When a donor substance is contained in the electron relay layer, the above-mentioned materials are used as the substance having high electron transport properties. In addition to the material, the LUMO level of the acceptor substance contained in the composite material layer is higher than the acceptor level. A substance having an energy level of -5.0e can be used. V or higher, preferably in the range of -5.0 eV to -3.0 eV It is preferable to use a material such as a perylene derivative or a nitrogen-containing material. Nitrogen-containing condensed aromatic compounds are stable. This is a preferred material for forming the electron relay layer.

[0100] Specific examples of perylene derivatives include 3,4,9,10-perylenetetracarboxylic dianhydride. (abbreviation: PTCDA), 3,4,9,10-perylenetetracarboxylic bisbenzyl Zoimidazole (abbreviation: PTCBI), N,N'-dioctyl-3,4,9,10-periodic Phenylenetetracarboxylic diimide (abbreviation: PTCDI-CH), N,N'-dihexyl- 3,4,9,10-perylenetetracarboxylic diimide (abbreviation: Hex PTC) It can be obtained.

[0101] Specific examples of nitrogen-containing condensed aromatic compounds include pyrazino[2,3-f][1,10] Phenanthroline-2,3-dicarbonitrile (PPDN), 2,3,6,7,1 0,11-Hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation :HAT(CN)6), 2,3-diphenylpyrido[2,3-b]pyrazine (abbreviation: 2P YPR), 2,3-bis(4-fluorophenyl)pyrido[2,3-b]pyrazine (abbreviation :F2PYPR) etc.

[0102] Other examples include 7,7,8,8-tetracyanoquinodimethane (TCNQ), 1,4 ,5,8,-Naphthalenetetracarboxylic dianhydride (abbreviation: NTCDA), perfluoro Pentacene, copper hexadecafluorophthalocyanine (abbreviation: F 16 CuPc), N,N' -bis(2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluoro (fluorooctyl)-1,4,5,8-naphthalenetetracarboxylic acid diimide (abbreviation: NT CDI-C8F), 3',4'-dibutyl-5,5''-bis(dicyanomethylene)-5 ,5''-dihydro-2,2':5',2''-terthiophene) (abbreviation: DCMT), Methanofullerenes (e.g., [6,6]-phenyl C 61butyric acid methyl ester) It is possible.

[0103] When a donor substance is contained in the electron relay layer, a substance with high electron transport properties and a donor substance are used. The electron relay layer may be formed by a method such as co-evaporation with a material.

[0104] The hole injection layer, the hole transport layer, the second light emitting layer 122, and the electron transport layer are made of the above-mentioned materials. However, the light emitting material of the second light emitting layer 122 may be the same as that of the first light emitting layer 1. A luminescent material that emits light with a wavelength longer than the color of light emitted by the luminescent material 20 is used.

[0105] The light-transmitting electrode 112 is provided in the light extraction direction, and therefore is made of a light-transmitting material. Examples of the light-transmitting material include indium oxide and indium tin oxide. , indium oxide zinc oxide, zinc oxide, gallium doped zinc oxide, graphene, etc. It can be used.

[0106] The transparent electrode 112 may be made of gold, platinum, nickel, tungsten, chromium, Metallic materials such as molybdenum, iron, cobalt, copper, palladium, or titanium can be used. Alternatively, nitrides of these metal materials (for example, titanium nitride) may be used. When a metal material (or its nitride) is used, it is sufficient to make it thin enough to have light-transmitting properties.

[0107] In the first light-emitting element 132a and the second light-emitting element 132b, the first EL layer 106, the The charge generating layer 108 and the second EL layer 110 are common to the pixels, It is formed as a continuous film. Therefore, it is not necessary to paint separately using a metal mask during the manufacturing process. Since it is necessary to form a film over a large area at once, it is possible to increase the size and productivity of display devices. Furthermore, the display area of ​​the display unit can be enlarged. In addition, to prevent defects caused by particles that may occur when using a metal mask, Therefore, display devices can be produced with a high yield.

[0108] It should be noted that an inorganic insulating film may be provided to cover the first light emitting element 132a and the second light emitting element 132b. The inorganic insulating film functions as a protective layer and a sealing film that protects against external contaminants such as water. By providing an inorganic insulating film, deterioration of the light-emitting element is reduced, and the durability and lifespan of the display device are improved. The inorganic insulating film is made of the same material as the inorganic insulator described above. It is possible.

[0109] A water-absorbing material that acts as a desiccant may be provided between the substrate 100 and the opposing substrate 128. It may be arranged in a solid state such as powder, or may be formed by a film formation method such as sputtering, which contains a water-absorbing substance. The light emitting element 132a may be provided on the first light emitting element 132a and the second light emitting element 132b in the form of a film. .

[0110] The opposing substrate 128 can be made of the same material as the substrate 100. The plate 128 includes at least a first color filter layer 134a and a second color filter layer 13 It is necessary for the film to be translucent to the light transmitted through 4b.

[0111] The first color filter layer 134a and the second color filter layer 134b may be, for example, A chromatic light-transmitting resin can be used. The chromatic light-transmitting resin can be photosensitive or non-sensitive. Although a photosensitive organic resin can be used, if a photosensitive organic resin layer is used, a resist mask This is preferable because it is possible to reduce the number of components and simplify the process.

[0112] Chromatic colors are colors other than achromatic colors such as black, gray, and white. It is made of materials that transmit only colored light. Chromatic colors include red, green, and blue. Also, cyan, magenta, yellow, etc. may be used. The color filter layer transmits only light of the selected chromatic color. This means that the peak is at the wavelength of light.

[0113] The color filter layer is made of an optimal film, taking into consideration the relationship between the concentration of the coloring material contained and the light transmittance. The thickness of the first reflective electrode 1 may be appropriately controlled. By adjusting the optical distance between the first light-emitting layer 120 and the first light-emitting layer 120 and utilizing the interference of light, The half width of the emission spectrum from the light-emitting layer 120 can be reduced. The optical distance between the reflective electrode 102b and the second light-emitting layer 122 is adjusted to take advantage of the interference of light. By using the second light-emitting layer 122, the half width of the emission spectrum from the second light-emitting layer 122 can be reduced. Therefore, the first color filter layer 134a and the second color filter layer 134b The concentration of the coloring material can be made low. As a result, the thickness of the first and second color filter layers 134b can be reduced. Reduce light absorption by the first color filter layer 134a or the second color filter layer 134b Therefore, the light utilization efficiency can be improved.

[0114] In this embodiment, the first color filter layer 134a and the second color filter Although an example in which the filter layer 134b is provided on the inner side of the counter substrate 128 is shown, the present invention is not limited to this. It is also possible to provide the light emitting element on the outside of the counter substrate 128 (on the side opposite to the light emitting element).

[0115] Alternatively, a color filter layer may be provided on the first light emitting element 132a and the second light emitting element 132b. Alternatively, a light-transmitting resin layer of a chromatic color that functions as a light-transmitting layer may be formed.

[0116] The region between the first color filter layer 134a and the second color filter layer 134b (insulating A light-shielding layer may be provided in the area overlapping with the layer 126. The light-shielding layer reflects or absorbs light. A material with light-shielding properties is used. For example, a black organic resin can be used. Resin materials such as non-photosensitive polyimide, pigment-based black resin, carbon black, titanium It may be formed by mixing black, etc. Also, a light-shielding metal film may be used, e.g. For example, chromium, molybdenum, nickel, titanium, cobalt, copper, tungsten, or aluminum Niu can be used.

[0117] The method for forming the light-shielding layer is not particularly limited, and may be a vapor deposition method, a sputtering method, a CVD method, etc. depending on the material. Dry method, or spin coating, dip coating, spray coating, droplet ejection method (inkjet method Wet printing methods such as screen printing and offset printing are used, and etching is used as necessary. The desired pattern can be obtained by dry etching or wet etching.

[0118] The light-shielding layer can prevent light from leaking into adjacent pixels, so providing a light-shielding layer can improve It becomes possible to perform a display with high contrast and high definition.

[0119] Figure 2 shows an embodiment of a display device different from that shown in Figure 1. Figure 2(A) is a cross section of the display unit of the display device. 2(B1), 2(B2) and 2(B3) show the structure of the ion exchange membrane shown in FIG. 2(A). The cross-sectional view is an enlarged view of a part of the display device shown in FIG. 2. The configuration of the display device shown in FIG. 2 is the same as that shown in FIG. Therefore, in the following, only the overlapping parts will be explained. may be omitted.

[0120] The display device shown in FIG. 2 includes a first pixel 230a, a second pixel 230b, and a third pixel 230c. The first pixel 230a has a first light-emitting element 232a provided on the substrate 100 and The first cover provided in the area overlapping the first light emitting element 232a on the opposing substrate 128. The second pixel 230b is formed on the substrate 100 and includes a color filter layer 134a. The second light emitting element 232b is provided on the opposing substrate 128. and a second color filter layer 134b provided in an area overlapping the first color filter layer 134a. The third pixel 230c includes a third light-emitting element 232c provided on the substrate 100 and a counter substrate 110. 28, a third color filter provided in an area overlapping with the third light emitting element 232c. and layer 134c.

[0121] In the display device shown in FIG. 2, the first color filter layer 134a and the second color filter The third color filter layer 134b and the third color filter layer 134c transmit light of different wavelengths. In this embodiment, the light having the central transmission wavelength ( Hereinafter, λ1) is the transmission center wavelength of the second color filter layer 134b (hereinafter, λ2) of the second color filter layer 134b. is shorter than the central transmission wavelength (hereinafter also referred to as λ3) of the third color filter layer 134c. This will be explained using an example where

[0122] For example, the first color filter layer 134a is blue and the second color filter layer 134b is green. By using red for the third color filter layer 134c, a full-color display is possible. The device may be a device.

[0123] The first light emitting element 232a has an electrode 102a having a first reflectivity and a A first conductive layer 104a having light-transmitting properties and a first E An L layer 106, a charge generation layer 108, a second EL layer 210, and a light-transmitting electrode 112. The second light emitting element 232b includes a second reflective electrode and a second light-transmitting electrode 102b stacked in this order on the second reflective electrode 102b. The conductive layer 104b, the first EL layer 106, the charge generating layer 108, and the second EL layer 21 are 0 and a light-transmitting electrode 112. c is a third reflective electrode 102c and a third reflective electrode 102c in sequence. The third light-transmitting conductive layer 104c, the first EL layer 106, and the charge generating layer 104b are stacked on top of each other. The organic EL device includes a green layer 108, a second EL layer 210, and a light-transmitting electrode 112. do.

[0124] In FIG. 2, the first light emitting element 232a, the second light emitting element 232b, and the third light emitting element 232c are The light emitted from the first light-emitting element 32c is emitted from the electrode 112 side, which has light-transmitting properties. The light emitting element 232a, the second light emitting element 232b, and the third light emitting element 232c are covered with the insulating layer 126. It is electrically isolated by

[0125] FIG. 2(B1) shows an enlarged view of the first light-emitting element 232a. FIG. 2(B2) shows an enlarged view of the second light-emitting element 232a. 2B shows an enlarged view of the third light-emitting element 232b. An enlarged view is shown.

[0126] The first light-emitting element 232a, the second light-emitting element 232b, and the third light-emitting element 232c shown in FIG. The difference between the first light emitting element 132a and the second light emitting element 132b shown in FIG. 1 is that the charge generation The second EL layer is provided on the layer 108. The light element 232b and the third light emitting element 232c are formed by at least the second light emitting layer 122 and the third light emitting layer 123. and a second EL layer 210 including the light-emitting layer 124. 210 is a layer having functions such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer in addition to the light emitting layer. The other configurations are the same as those of the first light-emitting element 132. a or the second light-emitting element 132b.

[0127] The first light-emitting element 232a, the second light-emitting element 232b, and the third light-emitting element 232c are The first light-transmitting conductive layer 104a and the second light-transmitting conductive layer 104b have different thicknesses. The light-transmitting conductive layer 104b and the light-transmitting conductive layer 104c are included, so that the light-transmitting conductive layer 104b and the light-transmitting conductive layer 104c are included, They have different total thicknesses.

[0128] The third light-transmitting conductive layer 104c can be formed to have a third light-transmitting property by adjusting its thickness. The light emitted by the layer 124 is reflected back by the third reflective electrode 102c. It has the role of adjusting the optical path length of the light that has passed through it (also called the third reflected light). The light incident on the third color filter layer 134c directly from the third light emitting layer 124 (the third The thickness of the third conductive layer 104c having light-transmitting properties is set to 1 / 200. By adjusting the phases of the third incident light and the third reflected light, the third light-emitting layer 12 Therefore, the light emitting device according to this embodiment can amplify the light emitted from the light emitting element 4. Compared with a light-emitting element that is not adjusted, a higher luminance can be obtained when the same current is passed through. Furthermore, the phases of the third incident light and the third reflected light can be adjusted by the third color filter layer 13. By adjusting the transmission center wavelength of the third pixel 230c to the wavelength of the third pixel 230c, the color purity of the light extracted from the third pixel 230c can be improved. can be improved.

[0129] Specifically, in the first light-emitting element 232a included in the first pixel 230a, The optical distance between the reflective electrode 102a and the first light-emitting layer 120 is It is preferable that the wavelength is 1 / 4 of the central transmission wavelength (λ1) of the second pixel 2. In the second light-emitting element 232b included in 30b, the electrode 102b having the second reflectivity The optical distance between the second light-emitting layer 122 and the second color filter layer 134b is It is preferable that the third emission length (λ2) is 3 / 4 of the third emission length (λ3). In the optical element 232c, a third reflective electrode 102c and a third light-emitting layer 124 are The optical path length is set to 5 / 4 of the transmission center wavelength (λ3) of the third color filter layer 134c. It is preferable that:

[0130] The transmission center wavelength of the first color filter layer 134a and the emission spectrum from the first light-emitting layer 120 are It is preferable that the spectra each have a maximum peak in a wavelength region that exhibits the same color. The transmission center wavelength of the second color filter layer 134b and the emission spectrum from the second light-emitting layer 122 are It is preferable that the spectra each have a maximum peak in a wavelength region that exhibits the same color. The central transmission wavelength of the third color filter layer 134c and the emission wavelength of the third light-emitting layer 124 are The light spectrum preferably has a maximum peak in each wavelength region that shows the same color. It's nice.

[0131] For example, when the first color filter layer 134a has a transmission center wavelength in the blue region (for example, For example, when the transmission center wavelength is 450 nm, the emission spectrum from the first light-emitting layer 120 is It is preferable that the maximum peak is in the region of 430 nm or more and 470 nm or less. For example, when the second color filter layer 134b has a transmission center wavelength in the green region (for example, When the super central wavelength is 550 nm, the emission spectrum from the second light-emitting layer 122 is It is preferable that the maximum peak is in the region of 20 nm or more and 550 nm or less. When the third color filter layer 134c has a transmission center wavelength in the red region (for example, When the center wavelength is 690 nm, the emission spectrum from the third light-emitting layer 124 is It is preferable that the maximum peak is in the region of 100 nm or more and 700 nm or less.

[0132] In this embodiment, the transmission center wavelength of the first color filter layer 134a is the transmission center wavelength of the second color filter layer 134b is shorter than the transmission center wavelength of the second color filter layer 134 The transmission center wavelength of the third color filter layer 134b is shorter than the transmission center wavelength of the third color filter layer 134c. The wavelength of the emitted color of the first light-emitting layer 120 is shorter than the wavelength of the emitted color of the second light-emitting layer 122. The wavelength of the emitted light from the second light-emitting layer 122 is shorter than that of the emitted light from the third light-emitting layer 124. Preferably it is shorter than the wavelength of the color.

[0133] The second EL layer 210 is laminated on at least the second light-emitting layer 122. The third light-emitting layer 124 may be formed in the same manner as the second EL layer 110 described above. However, the light-emitting material of the third light-emitting layer 124 may be the same as that of the second light-emitting layer 122. A light-emitting material that emits light with a wavelength longer than the color of light emitted by the light-emitting element is used.

[0134] FIG. 3 shows a plan view of the electrode structure of the display unit in the display device of this embodiment. In order to facilitate understanding, some of the components (for example, the second EL layer) are omitted. The display device in FIG. 3 is a passive matrix type display device, and The reflective electrodes 102 (first reflective electrode 102a, second reflective electrode 102b) are formed in a flat shape. a first reflective electrode 102b, and a third reflective electrode 102c) and a stripe The electrodes 112 (first electrode 112a, second electrode 112b) are formed in a flat shape and have light-transmitting properties. a first electrode 112b having light-transmitting properties and a third electrode 112c having light-transmitting properties, are stacked on top of each other.

[0135] The first EL layer, the charge generating layer, and the second EL layer are connected to the reflective electrode 102 and the light-transmitting electrode 103. The metal mask is formed as a continuous film over the entire surface between the metal mask and the electrode 112. There is no need to paint different colors.

[0136] The display device described in this embodiment mode has a reflectivity matching with a color filter layer that shows the color of a pixel. By optimizing the optical distance between the electrode and the light-emitting layer, high color purity and luminous efficiency can be achieved. Each color of light can be extracted from the pixel. The light-emitting layer is also formed on each pixel using a metal mask. By forming a continuous film without separate coatings, the yield is improved by using a metal mask. This makes it possible to avoid deterioration in image quality and complicated processes, thereby enabling the production of high-definition, low-power display devices. It will be possible to provide.

[0137] The structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. It is possible.

[0138] (Embodiment 2) In this embodiment, an active matrix display device according to one embodiment of the present invention will be described with reference to FIG. 4A is a plan view showing the display device, and FIG. 4B is a schematic view of the display device shown in FIG. FIG. 1 is a cross-sectional view taken along lines AB and CD.

[0139] In the display device of FIGS. 4A and 4B, the element substrate 410 and the sealing substrate 404 are bonded to each other by a sealing material 405. Therefore, the drive circuit section (source side drive circuit 401, gate side drive circuit 403) is fixed. ) is an example having a pixel portion 402 including a plurality of pixels.

[0140] The wiring 408 is a signal input to the source side driver circuit 401 and the gate side driver circuit 403. The wiring for transmitting signals is the FPC (Flexible Printed Circuit) which serves as the external input terminal. Kit) Receives video signals, clock signals, start signals, reset signals, etc. from 409 Although only the FPC is shown here, this FPC also has a printed wiring board ( The display device in this specification may be a display device body. This also includes the state in which an FPC or PWB is attached to it.

[0141] The drive circuit section (source side drive circuit 401, gate side drive circuit 403) includes a plurality of transistors. Each of the plurality of pixels included in the pixel section 402 includes a switching transistor and a current control transistor and a first electrode electrically connected to the drain electrode of the current control transistor; .

[0142] On the element substrate 410, a driving circuit section (a source side driving circuit 401, a gate side driving circuit 403) is provided. 4B, the source side driver, which is a driver circuit section, is formed. A circuit 401 and three pixels in a pixel portion 402 are shown.

[0143] Each of the plurality of pixels included in the pixel section 402 has a switching transistor and a current control transistor. The control transistor includes a first electrode electrically connected to the drain electrode of the control transistor. The pixel includes pixels of at least two colors, but in this embodiment, blue (B) pixel 420a 4 shows an example having three color pixels: a green (G) pixel 420b, and a red (R) pixel 420c.

[0144] The pixels 420a, 420b, and 420c are provided with color filter layers 434a, 434b, and 434c, respectively. 34c, light emitting elements 418a, 418b, 418c, and the light emitting elements 418a, 418b, 4 a transistor 41 electrically connected to the transistor 18c and functioning as a switching transistor; 2a, 412b, and 412c.

[0145] The light emitting elements 418a, 418b, and 418c are respectively provided with reflective electrodes 413a, 413b, 413c and light-transmitting conductive layers 415a, 415b, 415c. The electrodes 413a, 413b, and 413c have reflectivity, and the conductive layers 415a and 415b have light-transmitting properties. A first EL layer 431 having a first light-emitting layer provided on the stack of layers 15b and 415c, and a charge-emitting layer a second EL layer 433 provided with a second light-emitting layer and a third light-emitting layer; The electrode 417 has a laminated structure.

[0146] The thicknesses of the light-transmitting conductive layers 415a, 415b, and 415c are adjusted to produce blue (B) In the pixel 420a, the optical distance between the reflective electrode 413a and the first light-emitting layer is , which is ¼ of the transmission center wavelength of the color filter layer 434a, and The optical distance between the reflective electrode 413b and the second light-emitting layer is set to be equal to or smaller than the optical distance between the electrode 413b and the second light-emitting layer. The wavelength of the light having a transmittance of 3 / 4 of the center wavelength of the red (R) pixel 420c is reflective. The optical distance between the electrode 413c and the third light-emitting layer is set to the transmission center of the color filter layer 434c. Let it be 5 / 4 of the wavelength.

[0147] For example, the color filter layer 434a of the blue (B) pixel 420a has a transmission center wavelength of 450nm. The color filter layer 434b of the green (G) pixel 420b has a transmission center wavelength of The color filter layer 434c of the red (R) pixel 420c is transparent. The central wavelength should be red at 690 nm.

[0148] The optical distance between the reflective electrode and the light-emitting layer is adjusted to match the color filter layer that indicates the color of the pixel. By optimizing the above, it is possible to extract light of each color from the pixel with high color purity and luminous efficiency. In addition, the light-emitting layer is formed as a continuous film, rather than being painted separately for each pixel using a metal mask. This avoids the reduction in yield and the complication of the process that occurs when using a metal mask. This makes it possible to provide a display device with high definition and excellent color reproducibility. In addition, a display device with low power consumption can be provided.

[0149] The source side driver circuit 401 includes an n-channel transistor 423 and a p-channel transistor A CMOS circuit is formed by combining the transistor 424. It may be formed of various CMOS circuits, PMOS circuits or NMOS circuits formed by a transistor. In this embodiment, a source side driving circuit and a gate side driving circuit are formed on a substrate. An example is shown, but it is not necessarily required, and a part of the source side drive circuit and the gate side drive circuit, Alternatively, the entire structure may be formed externally rather than on the substrate.

[0150] The reflective electrodes 413a, 413b, and 413c and the light-transmitting conductive layer 41 An insulator 414 is formed to cover the ends of the electrodes 415a, 415b, and 415c. The insulating layer is formed by using a di-type photosensitive acrylic resin film.

[0151] In order to improve the covering property, the upper or lower end of the insulator 414 has a curvature. For example, the material of the insulator 414 is a positive photosensitive acrylic resin. When a conductor is used, only the upper end of the insulator 414 has a radius of curvature (0.2 μm to 3 μm). It is preferable to provide a curved surface. Negative photosensitive materials that become insoluble in etchants or become soluble in etchants when irradiated with light. Any positive-working photosensitive material that satisfies the above formula (1) can be used.

[0152] Color filter layers 434a, 434b, and 434c, and reflective electrodes 413a and 413 b, 413c, and light-transmitting conductive layers 415a, 415b, 415c, and the first EL layer 4 31, the charge generation layer 432, the second EL layer 433, and the light-transmitting electrode 417 For this purpose, the materials shown in Embodiment Mode 1 can be applied.

[0153] Furthermore, the sealing substrate 404 is bonded to the element substrate 410 with a sealant 405, The light emitting element 4 is disposed in a space 407 surrounded by the sub-substrate 410, the sealing substrate 404, and the sealant 405. 18. The space 407 is filled with a filler. In addition to being filled with inert gas (nitrogen, argon, etc.), it is also filled with organic resin and sealing material 405. The organic resin and sealing material 405 may contain a material containing a substance with hygroscopicity. It may be used.

[0154] It is preferable to use an epoxy resin for the sealing material 405. It is desirable that the material be as impermeable to moisture and oxygen as possible. The materials used include glass substrates, quartz substrates, and FRP (Fiberglass-Reinforced Plastics). forced plastics), PVF (polyvinyl fluoride), polyester or A plastic substrate made of acrylic or the like can be used.

[0155] As in this embodiment, the insulating film 411 that serves as the base film is formed between the element substrate 410 and the transistor semiconductor. The insulating film may be provided between the conductor layers. The insulating film is used to prevent the diffusion of impurity elements from the element substrate 410. It has a function of forming a silicon nitride film, a silicon oxide film, a silicon nitride oxide film, or a silicon oxynitride film. The film can be formed as a single layer or a laminated structure using one or more films selected from silicon films. Cut.

[0156] The structure of a transistor applicable to the display device disclosed in this specification is not particularly limited, and may be, for example, A top gate structure or a bottom gate structure of a staggered type or planar type can be used. In addition, the transistor has a single gate structure in which one channel formation region is formed. The gate structure was either a double gate structure with two gates or a triple gate structure with three gates. Alternatively, two gate electrodes may be arranged above and below the channel region via a gate insulating layer. It may be a dual gate type having a polar layer.

[0157] The gate electrode layer is made of molybdenum, titanium, chromium, tantalum, tungsten, and aluminum. Metallic materials such as tungsten, copper, neodymium, scandium, etc., or alloy materials containing these as the main components. The film can be formed as a single layer or a laminate.

[0158] For example, a two-layer stacked structure for the gate electrode layer is a molybdenum layer stacked on an aluminum layer. Two-layer laminated structure with a molybdenum layer on a copper layer, or two-layer structure with a molybdenum layer on a copper layer, or copper layer Two-layer structure with a titanium nitride layer or tantalum nitride layer laminated on top, a titanium nitride layer and molybdenum It is preferable to use a two-layer structure in which a tungsten layer is laminated. a tungsten nitride layer and an aluminum-silicon alloy layer or an aluminum It is preferable to use a laminated structure in which a titanium alloy layer and a titanium nitride layer or a titanium layer are laminated. Desirable.

[0159] The gate insulating layer is formed by depositing a silicon oxide layer using a plasma CVD method or a sputtering method. A silicon nitride layer, a silicon oxynitride layer, or a silicon nitride oxide layer is formed as a single layer or a stacked layer. In addition, the gate insulating layer can be formed by a CVD method using organic silane gas. It is also possible to form a silicon oxide layer. The organic silane gas is ethyl silicate (T EOS: Chemical formula Si(OC2H5)4), tetramethylsilane (TMS: Chemical formula Si(C H3)4), tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclo Tetrasiloxane (OMCTS), hexamethyldisilazane (HMDS), triethoxy Silane (SiH(OC2H5)3), trisdimethylaminosilane (SiH(N(CH3 Silicon-containing compounds such as ) 2) and 3) can be used.

[0160] The material used for the semiconductor layer is not particularly limited. The thickness may be appropriately set depending on the characteristics required for the semiconductor layers 423 and 424. Examples of materials that can be used are described below.

[0161] The semiconductor layer is formed using semiconductor material gases such as silane and germane. Amorphous semiconductors are made by vapor deposition or sputtering. a polycrystalline semiconductor obtained by crystallizing the amorphous semiconductor using light energy or thermal energy; Alternatively, a microcrystalline semiconductor or the like can be used. The semiconductor layer can be formed by sputtering or LPCV. The film can be formed by the D method, plasma CVD method, or the like.

[0162] The semiconductor layer can be made of a single crystal semiconductor such as silicon or silicon carbide. When a single-crystal semiconductor is used as the conductor layer, it becomes possible to miniaturize the transistor size. Therefore, it is possible to further increase the resolution of the pixels in the display area. When a semiconductor is used, an SOI substrate provided with a single crystal semiconductor layer can be used. Alternatively, a semiconductor substrate such as a silicon wafer may be used.

[0163] Representative amorphous semiconductors include hydrogenated amorphous silicon and crystalline semiconductors. A typical example is polysilicon. Polysilicon (polycrystalline silicon) has the following features: , which uses polysilicon as the main material and is formed through a process temperature of 800°C or higher. The main materials are high-temperature polysilicon and polysilicon formed at process temperatures below 600°C. The so-called low-temperature polysilicon is used as a material for the crystallization of amorphous silicon. It contains polysilicon, which is made by crystallizing silicon. Of course, as mentioned above, A semiconductor or a semiconductor layer containing a crystalline phase in part can also be used.

[0164] Furthermore, an oxide semiconductor may be used. As the oxide semiconductor, a quaternary metal oxide, I n-Sn-Ga-Zn-O system, ternary metal oxide In-Ga-Zn-O system, In -Sn-Zn-O system, In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga- Zn-O system, Sn-Al-Zn-O system, binary metal oxides such as In-Zn-O system, S n-Zn-O series, Al-Zn-O series, Zn-Mg-O series, Sn-Mg-O series, In-Mg -O, In-Ga-O, In-O, Sn-O, Zn-O, etc. can be used. The oxide semiconductor may contain SiO2. -Zn-O based oxide semiconductor is an oxide containing at least In, Ga and Zn, There is no particular limitation on the composition ratio, and elements other than In, Ga, and Zn may be contained.

[0165] The oxide semiconductor layer has the chemical formula InMO3(ZnO) m A thin film expressed as (m>0) Here, M is one or more selected from Ga, Al, Mn and Co. Indicates multiple metal elements. For example, M can be Ga, Ga and Al, Ga and Mn, or G Examples include a and Co.

[0166] In addition, when an In-Zn-O-based material is used as the oxide semiconductor, the atomic ratio is In / Z n=0.5 to 50, preferably In / Zn=1 to 20, more preferably In / Zn=1 By setting the atomic ratio of Zn in the above-mentioned preferred range, the electric potential of the transistor can be improved. The field effect mobility can be improved. When X:Y:Z, Z>1.5X+Y.

[0167] The oxide semiconductor layer is neither completely single crystalline nor completely amorphous, and CA AC-OS(C Axis Aligned Crystalline Oxide S The CAAC-OS film has an amorphous phase. The oxide semiconductor film has a crystalline-amorphous mixed phase structure, which includes crystalline and amorphous parts. The crystal part included in the CAAC-OS film has a c-axis that is normal to the surface on which the CAAC-OS film is formed or Aligned parallel to the surface normal vector (including the range of -5° to 5°) and ab It has a triangular or hexagonal atomic arrangement when viewed perpendicular to the plane, and is perpendicular to the c-axis (85° When viewed from the direction of the arrow (including the range of 95° or more and 95° or less), the metal atoms are layered or the metal atoms and oxygen atoms are The orientation of the a-axis and b-axis differs between different crystal parts. It may be so.

[0168] The material of the wiring layer that functions as the source electrode layer or the drain electrode layer is Al, Cr, T An element selected from the group consisting of a, Ti, Mo, and W, or an alloy containing the above elements, or In addition, when heat treatment is performed, the heat treatment For example, Al alone has poor heat resistance, However, since there are problems such as susceptibility to corrosion, it is formed in combination with heat-resistant conductive materials. Heat-resistant conductive materials that can be combined with 1 include titanium (Ti), tantalum (Ta), W, Molybdenum (Mo), Chromium (Cr), Neodymium (Nd), Scandium or an alloy containing the above elements, or It is formed of a combined alloy film or a nitride containing the above elements as components.

[0169] The insulating film 419 covering the transistor is an inorganic insulating film formed by a dry method or a wet method, or an organic insulating film. For example, a nitride film obtained by a CVD method or a sputtering method can be used. silicon nitride film, silicon oxide film, silicon oxynitride film, aluminum oxide film, tantalum oxide film A film made of polyimide, acrylic, benzol, or the like can be used. Organic materials such as cyclobutene resin, polyamide, and epoxy can be used. In addition to the above organic materials, low-k materials, siloxane resins, and PSG (phosphor silicon dioxide) are also available. Glass), BPSG (borophosphorus glass), etc. can be used.

[0170] Siloxane-based resin is a Si-OS compound formed using siloxane-based materials as starting materials. The siloxane resin corresponds to a resin containing an i bond. Alternatively, an organic group having a fluoro group may be used. The siloxane resin is applied to form a film, and is baked to form an insulating film 419. It can be used as:

[0171] Note that the insulating film 419 is formed by stacking a plurality of insulating films made of these materials. For example, a structure in which an organic resin film is laminated on an inorganic insulating film may be used.

[0172] As described above, an active matrix display device having a light-emitting element according to one embodiment of the present invention can be manufactured. You can get a position.

[0173] Note that this embodiment mode can be combined with other embodiment modes as appropriate.

[0174] (Embodiment 3) The display device disclosed in this specification can be applied to various electronic devices (including gaming machines). The electronic device can be, for example, a television device (television or television receiver) (also called signal processors), computer monitors, digital cameras, digital video cameras , digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable games Examples include gaming machines, mobile information terminals, sound reproduction devices, and large game machines such as pachinko machines. .

[0175] FIG. 5A shows a notebook personal computer, which includes a main body 3001 and a housing 3002. , a display unit 3003, a keyboard 3004, etc. By applying the display device described in any one of Embodiment 2 to the display portion 3003, high-precision It can be a thin, low-power consumption notebook personal computer.

[0176] FIG. 5B shows a personal digital assistant (PDA), and a main body 3021 includes a display unit 3023 and an external An external interface 3025 and operation buttons 3024 are also provided. The accessory is a stylus 3022. By applying the display device having the above configuration to the display portion 3023, it is possible to realize high-definition and low-power consumption portable information display. The terminal can be a PDA.

[0177] FIG. 5C shows an electronic book, which is composed of two housings, a housing 2701 and a housing 2703. The housing 2701 and the housing 2703 are integrated by a shaft 2711. The opening and closing operation can be performed around the shaft portion 2711. It is possible to perform operations such as registration.

[0178] A display unit 2705 is incorporated in the housing 2701, and a display unit 2707 is incorporated in the housing 2703. The display unit 2705 and the display unit 2707 are configured to display a continuous screen. Alternatively, a different screen may be displayed. For example, a sentence is displayed on the right display unit (display unit 2705 in FIG. 5C), and a An image can be displayed on the display unit (the display unit 2707 in FIG. 5C). The display device described in any one of Embodiments 2 is applied to the display portion 2705 and the display portion 2707. This allows for a high-definition and low-power consumption e-book reader. When using a semi-transmissive or reflective display device, use in relatively bright conditions is also anticipated. Therefore, solar panels are installed so that electricity can be generated by the solar panels and the battery can be charged. It is also possible to use a lithium-ion battery as the battery, which will allow for a smaller size. This has the advantage of being able to

[0179] FIG. 5C shows an example in which an operation unit and the like are provided on the housing 2701. The body 2701 includes a power supply 2721, operation keys 2723, a speaker 2725, etc. The operation keys 2723 can be used to turn pages. The back of the housing may be provided with a keyboard, a pointing device, etc. On the front and sides, there are external connection terminals (earphone terminal, USB terminal, etc.), a recording medium insertion port, etc. Furthermore, the electronic book may be configured to have a function as an electronic dictionary. You may do so.

[0180] The electronic book may also be configured to be capable of transmitting and receiving information wirelessly. It is also possible to purchase and download desired book data from the server. be.

[0181] FIG. 5D shows a mobile phone, which is composed of two housings, a housing 2800 and a housing 2801. The housing 2801 contains a display panel 2802, a speaker 2803, a microphone, and a 2804, pointing device 2806, camera lens 2807, external connection terminal 2 808, etc. The housing 2800 also includes a solar cell for charging the mobile phone. 2810, an external memory slot 2811, etc. The antenna is mounted on the housing 280 The display device shown in either the first embodiment or the second embodiment is built in the inside of the display device. By applying this to the display panel 2802, it will be possible to create a high-definition and low-power consumption mobile phone. can be done.

[0182] The display panel 2802 is equipped with a touch panel, and in FIG. 5(D) an image is displayed. The multiple operation keys 2805 are indicated by dotted lines. A boost circuit is also implemented to boost the voltage required for each circuit.

[0183] The display direction of the display panel 2802 changes appropriately depending on the usage mode. The camera lens 2807 is located on the same surface as the camera lens 2802, so video calls are possible. The speaker 2803 and microphone 2804 are not limited to voice calls, but also to video calls, Recording and playback are possible. Furthermore, the housing 2800 and the housing 2801 can be slid apart. 5(D) can be folded from the unfolded state to the overlapped state, making it suitable for carrying. It is possible to make the device smaller.

[0184] The external connection terminal 2808 can be connected to various cables such as AC adapters and USB cables. It is possible to charge the battery and to communicate data with a personal computer, etc. By inserting a recording medium into the memory slot 2811, it is possible to store and transfer a larger amount of data. do.

[0185] In addition to the above functions, even if the device has infrared communication function, TV reception function, etc. good.

[0186] FIG. 5(E) shows a digital video camera, which includes a main body 3051, a display unit (A) 3057, and a connection Eye part 3053, operation switch 3054, display part (B) 3055, battery 3056, etc. The display device shown in either the first embodiment or the second embodiment is configured as follows: By applying it to the display unit (A) 3057 and the display unit (B) 3055, high definition and low power consumption are achieved. It can be a low-power digital video camera.

[0187] FIG. 5F shows a television device, which is configured with a housing 9601, a display portion 9603, and the like. The display portion 9603 can display images. 9 shows a configuration in which a housing 9601 is supported by a stand 9605. By applying the display device described in any one of Embodiment 2 to the display portion 9603, This allows for a high-definition, low-power consumption television device.

[0188] The television set can be operated using an operation switch on the housing 9601 or a separate remote control. In addition, the remote control device can be configured to output the A display unit for displaying information may be provided.

[0189] The television device is assumed to be equipped with a receiver, modem, etc. It can receive television broadcasts and can also communicate by wire or wireless via a modem. By connecting to a network, you can send and receive data in one direction (sender to receiver) or two directions (sender to receiver). It is also possible to communicate information between the recipient and the receiver, or between receivers themselves.

[0190] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0191] The configuration shown in this embodiment mode may be obtained by combining the configurations shown in Embodiment Mode 1 or 2 as appropriate. They can be used in combination. [Example]

[0192] In this example, measurement results of characteristics of a display device according to one embodiment of the present invention will be described with reference to drawings and tables. explain.

[0193] A method for manufacturing a light-emitting element used in a display device in this embodiment will be described with reference to FIG. The display device has a light emitting element corresponding to a blue pixel (hereinafter referred to as light emitting element B) and a light emitting element corresponding to a red pixel. The light emitting element R includes at least a corresponding light emitting element (hereinafter referred to as light emitting element R).

[0194] The organic compound used in this example (BPhen, 9-phenyl-3-[4-(10-phenyl -9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 9-[4- (N-carbazolyl)]phenyl-10-phenylanthracene (abbreviation: CzPA), 4 -phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9- (phenyl-9H-fluoren-9-yl)phenyl)-pyrene-1,6-diamine (abbreviation :1,6mMemFLPAPrn)), 2-[3-(2,8-diphenyldibenzothiophene (4-phenyl)dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDB q-III), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl) Triphenylamine (abbreviation: PCBA1BP), (acetylacetonato)bis(6-te rt-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: Ir(tBu ppm)2(acac)), bis(2,3,5-triphenylpyrazinato)(dipivaloy The structural formula of Ir(tppr)2(dpm) is As shown below.

[0195] [ka]

[0196] The substrate 1101 is a glass substrate and serves as a reflective electrode 1101 for the light-emitting element B and the light-emitting element R. An aluminum-titanium alloy film was formed on the substrate 100 by sputtering. In this case, the reflective electrode 1101 was used as an anode.

[0197] Next, titanium (Ti) and then an indium-ion-containing silicon oxide film are formed on the reflective electrode 1101. A light-transmitting conductive layer 110 is formed by depositing indium tin oxide (ITSO) by a sputtering method. The deposited Ti was oxidized after the ITSO sputtering, and the resulting titanium oxide was formed. Since the film is changed to TiOx, it has light-transmitting properties. The ITSO was removed by etching.

[0198] By the above-described method, in this embodiment, a pixel including a light-emitting element B (hereinafter referred to as pixel B) , and a pixel including a light-emitting element R (hereinafter referred to as pixel R) exhibits a cavity effect. Therefore, in the light-emitting element R, a 6 nm TiO The light-emitting element B has a laminated structure of 80 nm thick ITSO and 80 nm thick SiO2. Then, a 6 nm TiOx film was applied as a conductive layer 1104. The surface of layer 1104 is covered with a polyimide film so that the surface is exposed in a 2 mm square area. The electrode area was set to 2 mm × 2 mm.

[0199] Next, a surface on which the reflective electrode 1101 and the light-transmitting conductive layer 1104 are formed is placed downward. A reflective electrode 1101 and a light-transmitting conductive layer 1104 are formed in such a manner that the reflective electrode 1101 and the ... The substrate 1100 was fixed to a substrate holder provided in a vacuum deposition apparatus. -4 Pa After the pressure was reduced to about 1000 psi, PCzPA and molybdenum oxide were The hole injection layer 1111 was formed by co-evaporation of PCzPA and molybdenum oxide (VI). The weight ratio of PCzPA to molybdenum oxide was adjusted to 1:0.5 (=PCzPA:molybdenum oxide). The thickness of the film was set to 20 nm. This is a deposition method in which deposition is carried out simultaneously from two sources.

[0200] Next, a 20 nm thick film of PCzPA was formed on the hole injection layer 1111, and a hole transport layer 1112 was formed. was formed.

[0201] On the hole transport layer 1112, CzPA and 1,6mMemFLPAPrn were , 6mMemFLPAPrn = 1:0.05 (weight ratio) by co-evaporation. Thus, a light emitting layer 1113 was formed. The film thickness was set to 30 nm.

[0202] On the light-emitting layer 1113, CzPA was formed into a film having a thickness of 5 nm, and an electron transport layer 1114a was formed.

[0203] On the electron transport layer 1114a, bathophenanthroline (abbreviation: BPhen) was deposited to a thickness of 15 nm. The electron transport layer 1114b was formed by depositing the film as follows.

[0204] Lithium oxide (Li2O) was deposited on the electron transport layer 1114b to a thickness of 0.1 nm. A electron injection layer 1115a is formed, and copper (II) phthalocyanine (approximately 1000 uF) is deposited on the electron injection layer 1115a. CuPc) was evaporated to a thickness of 2 nm to form an electron injection layer 1115b.

[0205] PCzPA and molybdenum (VI) oxide are co-deposited on the electron injection layer 1115b. A charge generation layer 1102 was formed. The ratio of PCzPA to molybdenum (VI) oxide was The ratio was adjusted to 1:0.5 (=PCzPA:molybdenum oxide), and the film thickness was 20 nm.

[0206] On the charge generating layer 1102, BPAFLP was deposited to a thickness of 20 nm to form a hole transport layer 1212. Successful.

[0207] On the hole transport layer 1212, 2mDBTPDBq-III, PCBA1BP, and Ir(t Buppm)2(acac) and 2mDBTPDBq-III:PCBA1BP:Ir (tBuppm)2(acac) = 0.8:0.2:0.06 (weight ratio) The light-emitting layer 1213 was formed by vapor deposition to a thickness of 20 nm.

[0208] On the light-emitting layer 1213, 2mDBTPDBq-III and Ir(tppr)2(dpm) , 2mDBTPDBq-III:Ir(tppr)2(dpm)=1:0.06(weight ratio ) was co-evaporated to form the light-emitting layer 1313. Ta.

[0209] On the light-emitting layer 1313, 2mDBTPDBq-III was formed into a film having a thickness of 15 nm. An electron transport layer 1214a was formed.

[0210] On the electron transport layer 1214a, BPhen was formed into a film having a thickness of 15 nm. 214b was formed.

[0211] Lithium fluoride (LiF) was evaporated onto the electron transport layer 1214b to a thickness of 1 nm, and electron injection was performed. An in-layer 1215 was formed.

[0212] On the electron injection layer 1215, silver and magnesium are deposited in a film with a volume ratio of silver:magnesium = 10:1. A film containing silver and magnesium (AgMg) was formed as the conductive layer 1105. Successful.

[0213] On the conductive layer 1105, indium tin oxide (ITO) was deposited to a thickness of 7 mm by sputtering. A light-transmitting electrode 1103 was formed by depositing a film having a thickness of 0 nm.

[0214] The light-emitting elements B and R used in this example were fabricated by the above steps.

[0215] In the above-described deposition process, the deposition was all carried out by resistance heating.

[0216] The element structures of the light-emitting elements B and R obtained as described above are shown in Table 1.

[0217] [Table 1]

[0218] The light-emitting elements B and R were placed in a glove box with a nitrogen atmosphere. The device was sealed with a glass substrate to prevent exposure to air.

[0219] Next, the light emitting element B and the light emitting element R are provided with a color filter layer CF(B), a color filter Pixels B and R were fabricated using a stack of layers CF(R).

[0220] The color filter layer CF(B) is made of CB-7001W (manufactured by Fujifilm Corporation). The color filter layer CF(R) is made of CB-7001W (manufactured by Fujifilm Corporation). ) was applied to a glass substrate and then baked at 220°C for 1 hour to form the film. The film thickness was 1.3 to 1.4 μm. The fabric was subjected to spin coating, and the rotation speed of the spin coating was set to 1 / 3. B) at 2000 rpm, and the color filter layer CF(R) at 500 rpm. did.

[0221] The relationship between wavelength and transmittance of the color filter layer CF(B) and the color filter layer CF(R) is shown. 7. In FIG. 7, the color filter layer CF(B) is indicated by a thick dashed line, and the color filter layer C F(R) is shown by a thick solid line. The transmittance is measured by measuring the light transmitted through the glass substrate from the light source. The measurement was performed using a U-4000 self-recording spectrophotometer (Hitachi High-Technologies Corporation). (manufactured by)

[0222] As can be seen from FIG. 7, in the visible light region (380 nm to 680 nm), the color filter layer CF (B The wavelength range in which the transmittance of ) is 50% or more is 410 nm to 516 nm, and The central wavelength is 463 nm. In the visible light range (380 nm to 680 nm), The wavelength range in which the color filter layer CF(R) exhibits a transmittance of 50% or more is 602nm to 68 0 nm, and its transmission center wavelength is 641 nm.

[0223] In the pixel B shown in this embodiment, the light between the reflective electrode 1101 and the light emitting layer 1113 is The optical distance is set to 1 / 4 of the transmission center wavelength of the color filter layer CF(B). is calculated as refractive index x distance (film thickness). The thickness of each layer used in the calculation, the refractive index at a wavelength of about 463 nm, and the calculated optical distance is shown in Table 2.

[0224] [Table 2]

[0225] From Table 2, in the light-emitting element B, the light-emitting layer 1111 is approximately 13 nm from the interface with the hole injection layer 1111. The optical distance between the light emitting region 1113 and the reflective electrode 1101 is This corresponds to 1 / 4 of the central transmission wavelength (463 nm) of CF(B).

[0226] In addition, in the pixel R, the thickness of the conductive layer 1104 having light-transmitting properties of the light-emitting element R is adjusted. The optical distance between the reflective electrode 1101 and the light-emitting layer 1313 is determined by the color filter. In this example, the optical path length of the light emitting element R is set to 3 / 4 of the transmission center wavelength of the layer CF(R). The thickness of each layer used in the calculation, the refractive index at a wavelength of around 641 nm, and the calculated optical distance is shown in Table 3.

[0227] [Table 3]

[0228] From Table 3, in the light-emitting element R, the light-emitting layer 13 The optical distance between the light-emitting region 13 and the reflective electrode 1101 is This corresponds to 3 / 4 of the central transmission wavelength (641 nm) of (R).

[0229] Brightness: approx. 1000cd / m 2 Under the condition that The current efficiency, CIE chromaticity coordinates (x, y), and voltage were measured. The measurements were carried out at room temperature (25°C). The event was held in a relaxed atmosphere.

[0230] In pixel B, the current efficiency is 3 cd / A and the CIE chromaticity coordinates are (x=0.14, y =0.07) and the voltage was 7.9 V. In pixel R, the current efficiency was 12 cd / A, the CIE chromaticity coordinates were (x=0.67, y=0.33), and the voltage was 6.5V. Ta.

[0231] The chromaticity of pixel B and pixel R is shown in the chromaticity coordinates of Figure 8. In Figure 8, pixel B is a square dot. The pixel R is a round dot, and the solid line is the NTSC ratio defined by NTSC.

[0232] As shown in FIG. 8, pixel B and pixel R both have small deviation from the NTSC ratio and good color purity. It is clear that the pixel count is high.

[0233] As described above, by applying one embodiment of the present invention, a color reproduction device having pixels with high color purity can be realized. It was confirmed that a highly practical display device could be provided. [Explanation of symbols]

[0234] 100 boards 102 electrode 102a electrode 102b electrode 102c electrode 104a conductive layer 104b Conductive layer 104c conductive layer 106 EL layer 108 Charge generation layer 110 EL layer 112 Electrode 112a electrode 112b electrode 112c electrode 120 luminescent layer 122 Light-emitting layer 124 Light-emitting layer 126 Insulating Layer 128 Opposing substrate 130a pixels 130b pixels 132a Light-emitting element 132b Light-emitting element 134a Color filter layer 134b Color filter layer 134c Color filter layer 210 EL layer 230a pixels 230b pixels 230c pixels 232a Light-emitting element 232b Light-emitting element 232c Light-emitting element 401 Source side drive circuit 402 Pixel section 403 Gate side drive circuit 404 Sealing substrate 405 Sealing material 407 Space 408 Wiring 410 Element substrate 411 Insulating film 412a Transistor 412b transistor 412c transistor 413a electrode 413b Electrode 413c electrode 414 Insulators 415a conductive layer 415b Conductive layer 415c conductive layer 417 Electrode 418 Light-emitting element 418a Light-emitting element 418b Light-emitting element 418c Light-emitting element 419 Insulating Film 420a pixels 420b pixels 420c pixels 423 n-channel transistor 424 p-channel transistor 431 EL layer 432 Charge generation layer 433 EL layer 434a Color filter layer 434b Color filter layer 434c Color filter layer 1100 board 1101 Electrode 1102 Charge generation layer 1103 Electrode 1104 Conductive layer 1105 Conductive layer 1111 Hole injection layer 1112 Hole transport layer 1113 Light-emitting layer 1114a Electron transport layer 1114b Electron transport layer 1115a Electron injection layer 1115b Electron injection layer 1212 Hole transport layer 1213 Light-emitting layer 1214a Electron transport layer 1214b Electron transport layer 1215 Electron injection layer 1313 Light-emitting layer 2701 Housing 2703 Housing 2705 ​​Display section 2707 Display section 2711 Shaft 2721 Power supply 2723 Operation Key 2725 Speaker 2800 chassis 2801 Case 2802 Display panel 2803 Speaker 2804 Microphone 2805 Operation Key 2806 Pointing Device 2807 Camera lenses 2808 External connection terminal 2810 solar cell 2811 External Memory Slot 3001 main unit 3002 Case 3003 Display section 3004 Keyboard 3021 Main Unit 3022 stylus 3023 Display section 3024 Operation button 3025 External Interface 3051 Main Unit 3053 Eyepiece 3054 Operation switch 3056 Battery 9601 Housing 9603 Display section 9605 Stand

Claims

1. a first transistor including a single crystal semiconductor layer; a first light-emitting element, a second light-emitting element, a first color filter layer, a second color filter layer, and a filler; The first light-emitting element is a first layer including a reflective material; a second layer on the first layer, the second layer including a light-transmitting material; a first light-emitting layer on the second layer; and a second light-emitting layer on the first light-emitting layer; and a third layer containing a light-transmitting material on the second light-emitting layer, The second light-emitting element is a fourth layer including a reflective material; and a fifth layer on the fourth layer, the fifth layer including a light-transmitting material; the first light-emitting layer on the fifth layer; and the second light-emitting layer on the first light-emitting layer; and the third layer on the second light-emitting layer, the first color filter layer overlaps the first light-emitting element; the first color filter layer has a first center wavelength in a range in which the transmittance is 50% or more in the visible light region; the second color filter layer overlaps the second light-emitting element; the first color filter layer has a second center wavelength in a range in which the transmittance is 50% or more in the visible light region; the filler is provided between the first light-emitting element and the first color filter layer; the single-crystal semiconductor layer comprises silicon or silicon carbide; the first layer comprises at least one of aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium; the fourth layer comprises at least one of aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium; the second layer comprises at least one of indium oxide, indium tin oxide, indium oxide zinc oxide, zinc oxide, gallium doped zinc oxide, or graphene; The display device, wherein the filler comprises an organic resin.

2. In claim 1, the first central wavelength is different from the second central wavelength; A display device, wherein an optical distance between the first light-emitting layer and the first layer in the first light-emitting element is different from an optical distance between the second light-emitting layer and the second layer in the second light-emitting element.

3. In claim 1 or 2, A display device, wherein an optical distance between the first light-emitting layer and the first layer in the first light-emitting element is different from an optical distance between the first light-emitting layer and the second layer in the second light-emitting element.

Images