Primers and pattern formation methods for semiconductor substrates

A surface modifier with a silane coupling agent enhances adhesion and reduces etching defects in semiconductor manufacturing, improving photoresist resolution and lithography processes.

JP2026095564APending Publication Date: 2026-06-11NISSAN CHEM CORP

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
NISSAN CHEM CORP
Filing Date
2026-03-31
Publication Date
2026-06-11

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Abstract

The present invention provides a novel surface modifier for resist patterns, a primer for semiconductor substrates, which exhibits high adhesion to the resist film and enables the formation of good resist patterns in thin films; a laminated substrate in which the surface modifier and the resist pattern are sequentially laminated on the substrate; a pattern formation method; and a method for manufacturing a semiconductor device. [Solution] A surface modifier for resist patterns, which is applied to a substrate before forming a resist pattern of 0.10 μm or less on the substrate to enhance adhesion between the substrate and the resist pattern, characterized in that it contains at least one of the compound represented by the following average composition formula (1), its hydrolysate, or hydrolyzed condensate. TIFF2026095564000056.tif7164 (In the formula, R 1 ha-(CH2) n It is a Y group, where Y is a cyclohexenyl group, n is an integer from 0 to 4, and R 2 (where is a C1-4 monovalent hydrocarbon group, X is a hydrogen atom or a C1-4 monovalent hydrocarbon group, a is a number from 1 to 2, b is a number from 0 to 1, c is a number from 0 to 2, and a+b+c≦4.)
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