Sheet-like bonding material, method for manufacturing a bonded body, and bonded body
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- HOKKAIDO UNIVERSITY
- Filing Date
- 2024-03-06
- Publication Date
- 2026-06-11
Smart Images

Figure 0007873041000002 
Figure 0007873041000003 
Figure 0007873041000004
Abstract
Claims
1. The core consists of copper particles and Cu 64 O and Cu 8 A shell comprising one or more trace copper oxides from O, and the Cu 64 O and Cu 8 One or more of the O molecules are copper oxide particles with an average particle size of 1 nm to 20 nm, and are copper oxide coated copper particles. Including a medium, A sheet-like bonding material having a content of more than 85% by mass of the aforementioned copper particles coated with a small amount of copper oxide.
2. The sheet-like bonding material according to claim 1, wherein the copper particles that constitute the core have an average particle size of 20 nm or more and less than 2 μm.
3. The sheet-like bonding material according to claim 1, wherein the thickness is 1 μm or more and 1 mm or less.
4. A laminate is obtained by placing the sheet-like bonding material described in any one of claims 1 to 3 between a first member and a second member, and The laminate is heated to 100 to 500°C, and the first member and the second member are joined via the sintered sheet-like bonding material. A method for manufacturing a composite body, including the above.
5. The method for manufacturing a bonded body according to claim 4, wherein the heating of the laminate is performed under pressure of 40 kPa or more.
6. The method for manufacturing a bond according to claim 4, wherein at least one of the first member and the second member is a semiconductor element, and the bond is a semiconductor device.
7. A joint comprising a first member, a second member, and a sintered sheet-like joining material according to any one of claims 1 to 3 for joining the first member and the second member.
8. The junction according to claim 7, wherein at least one of the first member and the second member is a semiconductor element, and the junction is a semiconductor device.