Silicon-containing resist underlayer film formation composition

A silicon-containing resist underlayer film formation composition using polysiloxane and sulfonic acid compounds allows for both dry and wet etching, addressing substrate damage issues and enabling high etching rates for advanced lithography.

JP7875472B2Active Publication Date: 2026-06-18NISSAN CHEM CORP
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Patent Information

Application Number
JP2023517598
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-04-30
Filing Date
2022-04-27
Publication Date
2026-06-18
Estimated Expiration
2042-04-27

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Patent Text Reader

Abstract

Provided is a composition for forming a silicon-containing resist underlayer film, the composition containing: a component [A] of a polysiloxane; a component [B] of at least one selected from a sulfonic acid compound and an acid having a pKa of -15.0 to 1.2; and a component [C] of a solvent.
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Citation Information

Patent Citations

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  • Composition for forming silicon-containing resist underlayer film and patterning process

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  • Composition for forming underlayer film for silicon-containing EUV resist and containing onium sulfonate

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  • Composition for forming silicon-containing resist underlayer film having cyclic diester group

    WO2014098076A1