Semiconductor device and methods of formation

Abstract

A fin-based transistor includes a gate structure that is vertically-arranged with source / drain regions of the fin-based transistor. The gate structure may wrap around the top and sides of a fin structure of the fin-based transistor, and source / drain regions of the fin-based transistor are located on a bottom of the fin structure. Source / drain contacts of the fin-based transistor are located on the source / drain regions over the bottom of the fin structure. This enables the gate structure and the source / drain contacts to be located on vertically opposing sides of the fin structure, thereby enabling gate spacers to be omitted from the fin-based transistor.