Selective hard mask etching using non-plasma microwave processing

The microwave oxidation etch process addresses the issue of damage in conventional dry etch processes by using non-plasma methods to selectively remove materials, enhancing the integrity of MOL interconnects in semiconductor manufacturing.

WO2026151487A1PCT designated stage Publication Date: 2026-07-16APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
APPLIED MATERIALS INC
Filing Date
2025-10-10
Publication Date
2026-07-16

AI Technical Summary

Technical Problem

Conventional dry etch processes for semiconductor manufacturing cause unintentional damage to underlying layers due to plasma generation and high temperatures, especially when removing nitridation and oxidation layers from molybdenum metal fill layers, leading to increased resistance in MOL interconnects.

Method used

A microwave oxidation etch process is used without plasma generation to selectively remove unwanted materials, followed by a preclean process and selective deposition of a capping layer, utilizing a non-plasma microwave processing method to minimize damage to semiconductor structures.

Benefits of technology

The method effectively reduces damage to underlying layers while achieving selective etching, resulting in lower resistance and improved connectivity in MOL interconnects.

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Abstract

Embodiments of the present disclosure generally relate to non-plasma methods of processing a substrate. More specifically, the methods disclosed herein incorporate microwave oxidation that is used to selectively etch materials during semiconductor device manufacturing. The method for etching a semiconductor device structure is disclosed includes performing a microwave oxidation etch process on the semiconductor device structure, wherein a hard mask is disposed over at least a portion of the semiconductor device structure. The microwave oxidation etch process includes flowing a first process gas over the semiconductor device structure and delivering a microwave energy to the first process gas without generating a plasma. The method further includes performing a preclean process on the semiconductor device structure. The preclean process includes flowing a second process gas over the semiconductor device structure.
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