Semiconductor device and method of formation

Abstract

In an embodiment, a semiconductor device includes a plurality of first nanostructures, the plurality of first nanostructures extending between first source / drain regions, a plurality of second nanostructures over the plurality of first nanostructures, the plurality of second nanostructures extending between second source / drain regions, a first gate stack around the plurality of first nanostructures, a second gate stack over the first gate stack and disposed around the plurality of second nanostructures, where a first portion of the second gate stack is disposed above the plurality of second nanostructures, gate spacers on sidewalls of the first portion of the second gate stack, and a first metal contact that is in physical contact with a first source / drain region of the second source / drain regions, where an air-gap is disposed between a sidewall of the first metal contact and a sidewall of a first gate spacer of the gate spacers.