Semiconductor device

Abstract

A semiconductor device includes: a substrate; an active pattern including a first portion and a second portion that extend in a first horizontal direction on an upper surface of the substrate and are spaced apart from each other in a second horizontal direction; a first plurality of nanosheets stacked on the first portion; and a second plurality of nanosheets stacked on the second portion. The semiconductor device further includes a ground structure including a third plurality of nanosheets stacked on the first and second portions; and a semiconductor layer between the third plurality of nanosheets and including silicon germanium; a first gate electrode surrounding the first and second plurality of nanosheets; a ground gate electrode covering an upper surface and sidewalls of the ground structure in the second horizontal direction; and a ground silicide layer between the ground structure and the ground gate electrode including a metal silicide.