Semiconductor device and method of forming the same

Abstract

A semiconductor device includes: a first substrate; a first fin protruding above the first substrate; first nanostructures over the first fin; a first gate structure around the first nanostructures; a first source / drain region adjacent to the first gate structure and contacting a first subset of the first nanostructures; a first dielectric structure between the first source / drain region and the first fin, where the first dielectric structure contacts a second subset of the first nanostructures; second nanostructures over the first fin and laterally spaced apart from the first nanostructures; a second gate structure around the second nanostructures; and a second source / drain region adjacent to the second gate structure and contacting the second nanostructures.