Wide-spectrum modulation-demodulation type imaging spectrum chip and production method

Abstract

A wide-spectrum modulation-demodulation type imaging spectrum chip and a production method therefor, relating to the technical field of semiconductor optics. From top to bottom, the chip sequentially comprises: a wide-spectrum modulation structure layer, comprising wide-spectrum modulation structure units, wherein the plane views of the wide-spectrum modulation structure units in the x-z plane are in two C shapes, the openings of the two C shapes are oppositely arranged in a mirror image mode, and the wide-spectrum modulation structure layer is used for modulating incident light information; a photoelectric image sensor module, used for collecting modulated incident light information, and converting the modulated incident light information into a digital electrical signal; and a spectral image demodulation module, used for demodulating the digital electrical signal to generate target multispectral image information.

Description

A wide-spectrum modulation and demodulation imaging spectrum chip and its production method

[0001] Related applications

[0002] This application claims priority to the Chinese patent application filed with the China Patent Office on November 9, 2023, with application number 202311482992.1, the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present application belongs to the field of semiconductor optics, and specifically relates to an imaging spectroscopy chip and a production method thereof. Background Art

[0004] Imaging spectroscopy chips are key components in spectral imaging detection systems. They can simultaneously perform two-dimensional imaging of a target and detect its spectral information. Currently, the development of imaging spectroscopy chips primarily utilizes methods such as filters, quantum dots, Fabry-Perot interferometry, photonic crystals, and narrow-band filtering using superstructured surfaces.

[0005] The filter method, as described in U.S. Patent No. US9466628B2, "Spectral imaging device and method to calibrate the same," uses multiple filters for light splitting and uses an image sensor to collect continuous, narrow-band spectral image data with high spectral resolution.

[0006] The quantum dot method, as described in Chinese patent document CN114910165A, is a spectral chip and a spectral device that performs light splitting by preparing quantum dot films with different transmission curves on a photoelectric image sensor wafer to obtain information related to the spatial distribution of the intensity of the incident light source and spectral information.

[0007] The Fabry-Perot interferometry method, as described in Chinese patent document CN111351573A, describes a spectral chip, chip packaging structure, and fabrication method. By creating a Fabry-Perot cavity composed of a reflective film on the photosensitive surface of a photoelectric image sensor, incident light is split. The photoelectric image sensor then collects information about the incident light, achieving modularization and miniaturization of spectral detection.

[0008] The photonic crystal method, as described in Chinese patent document CN114279565A, is an uncooled infrared spectroscopy chip, its preparation method, and infrared spectrometer. By preparing multiple photonic crystal arrays with different parameters on the photosensitive surface of the photoelectric image sensor, broadband spectrometry of the incident light is achieved. At the same time, by scaling the dimension of the photonic crystal, the crosstalk of the incident light on the sensor is reduced, thereby improving the accuracy of spectral measurement.

[0009] The metasurface narrow-band filtering method, as described in Chinese patent document CN106847849A, is a multispectral chip based on metasurface narrow-band filtering and its preparation method. By preparing periodic porous nanostructure arrays of different sizes on a metal dielectric film layer of the same thickness, narrow-band filtering of the target image in the multispectral spectrum is achieved, which can realize the preparation of miniaturized, large-array imaging spectrum chips.

[0010] In practical applications, these imaging spectral chip technologies face practical technical challenges, such as low energy efficiency, low spectral modulation, narrow spectral coverage, reduced spatial resolution, and a small field of view. These challenges make them unsuitable for everyday applications. Furthermore, the manufacturing process is complex and requires high precision, making mass production impossible.

[0011] Summary of the Invention

[0012] In order to solve the problems existing in the practical application of existing imaging spectral chip technology: low energy utilization, low spectral modulation, reduced spatial resolution, small field of view, complex preparation process, high process precision requirements, and inability to mass produce, this application proposes a wide-spectrum modulation-demodulation imaging spectral chip based on a symmetrical C-shaped three-dimensional structure and its production method.

[0013] The chip comprises, from top to bottom, a wide spectrum modulation structure layer, a photoelectric image sensor module, and a spectrum image demodulation module.

[0014] In one embodiment, the wide-spectrum modulation structural layer is composed of a plurality of wide-spectrum modulation structural units, and the plurality of wide-spectrum modulation structural units constitute N×N channels, and each channel corresponds to a metamaterial structural unit array.

[0015] In one embodiment, the value of N is 3, 4, or 5.

[0016] In one embodiment, the wide spectrum modulation structure unit is two C-shaped in the xz plane view, and the two C-shaped openings are arranged in a mirror image relative to each other.

[0017] In one embodiment, the wide spectrum modulation structural unit is a cuboid, which is a square in the xz plane, with a side length L of 1 μm to 10 μm, and a width of the cuboid along the y-axis direction of 1 μm to 10 μm.

[0018] In one embodiment: the slit width ω between the incident end and the output end of the C-shaped is 0.3μm-3μm; the thickness of the incident end and the output end is t, the depth d of the inner wall groove of the C-shaped is 0.2μm to 2μm, the width of the inner wall groove of the C-shaped is h, and: L=h+2t.

[0019] In one embodiment, each broadband modulation structure unit in the broadband modulation structure layer corresponds one-to-one to each pixel unit in the photoelectric image sensor module and is coaxial.

[0020] In one embodiment, the photoelectric image sensor module is used to collect and modulate the light signal projected through the wide-spectrum modulation structure layer to obtain a modulated spectrum signal, and send the modulated spectrum signal to a spectrum image demodulation module.

[0021] In one embodiment, the spectral image demodulation module is used to demodulate the modulated spectral signal to obtain target image information and spectral information.

[0022] In one embodiment, a photosensitive surface is prepared on the surface of the photoelectric image sensor module, and the photosensitive surface matches the broadband modulation structure layer.

[0023] The production method includes: preparing a wide-spectrum modulation structural layer, selecting a photoelectric image sensor module and a spectral image demodulation module, and connecting them in sequence. The preparation method of the wide-spectrum modulation structural layer includes: substrate pretreatment, magnetron sputtering coating, ion beam etching structure, substrate cleaning, spin coating of photoresist, soft baking, preparation of mask, alignment and exposure, debonding and hard baking, magnetron sputtering coating, alignment mark points, ion beam etching structure, and protective layer plating.

[0024] This application proposes new technical ideas, breaking through the constraints of the manufacturing principles and structural principles of several imaging spectral chips described in the background technology, and innovatively designs a wide-spectrum modulation-demodulation imaging spectral chip architecture based on a symmetrical C-shaped three-dimensional structure. It independently develops a spectral modulation metamaterial structure, and innovatively designs a production process compatible with the existing CMOS lithography production, which can realize the batch production of spectral chips. The established innovative technical route has the advantages of energy utilization rate higher than 50%, high spectral resolution, large field of view, large amount of information, no decrease in spatial resolution, small size, low cost and mature production process, and has great social benefits and broad application value.

[0025] This application can be applied to scenarios such as food testing, agricultural monitoring, medical sensing, camouflage identification, and aerospace remote sensing. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] FIG1 is a schematic structural diagram of a wide-spectrum modulation and demodulation imaging spectral chip according to Embodiment 1, wherein 1 is a wide-spectrum modulation structure layer, 2 is a photoelectric image sensor module, and 3 is a spectral image demodulation module;

[0027] FIG2 is a physical picture of a wide-spectrum modulation and demodulation imaging spectroscopy chip according to the fifth embodiment;

[0028] FIG3 is a schematic diagram showing the principle of a wide-spectrum modulation and demodulation imaging spectroscopy chip according to Embodiment 1 and Embodiment 5;

[0029] FIG4 is a schematic diagram of the structure of the wide spectrum modulation unit according to the fifth embodiment, wherein L is the side length of the square, t is the thickness of the incident end and the output end, h is the width of the C-shaped inner wall groove, ω is the width of the slit between the incident end and the output end of the C-shaped, and d is the depth of the C-shaped inner wall groove;

[0030] FIG5 is a diagram of a wide spectrum modulation structure layer and a partial enlarged view thereof according to a fifth embodiment;

[0031] FIG6 is a diagram of a broadband modulation spectrum according to a fifth embodiment;

[0032] FIG7 is a schematic diagram of gain control of individual channels of a photoelectric image sensor module according to Embodiment 5;

[0033] FIG8 is a grayscale image and a multispectral image of the multispectral imaging result of the spectral chip according to the fifth embodiment;

[0034] FIG9 is an 8-band imaging result of the spectral chip according to the fifth embodiment;

[0035] FIG10 is a comparison diagram of the spectrometer test results of the color block 1 and the chip spectrum inversion results according to the fifth embodiment;

[0036] FIG11 is a comparison diagram of the spectrometer test results of the color block 7 and the chip spectrum inversion results according to the fifth embodiment;

[0037] FIG12 is a comparison diagram of the spectrometer test results of the color block 13 and the chip spectrum inversion results according to the fifth embodiment;

[0038] FIG13 is a comparison diagram of the spectrometer test results of the color block 19 described in the fifth embodiment and the chip spectrum inversion results. DETAILED DESCRIPTION

[0039] The following will clearly and completely describe the technical solutions in the embodiments of this application in conjunction with the drawings of this application. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0040] Implementation Method 1

[0041] This embodiment will be described with reference to FIG1 and FIG3 .

[0042] The wide-spectrum modulation and demodulation imaging spectral chip described in this embodiment comprises, from top to bottom, a wide-spectrum modulation structure layer 1 , a photoelectric image sensor module 2 , and a spectral image demodulation module 3 .

[0043] Specifically:

[0044] The broadband modulation structure layer 1 is used to modulate incident light information;

[0045] The photoelectric image sensor module 2 is matched with the wide spectrum modulation structure layer 1 and is used to collect modulated incident light information and convert it into a digital electrical signal;

[0046] The spectral image demodulation module 3 is used to demodulate the digital electrical signal to generate target multispectral image information.

[0047] The wide spectrum modulation structure layer 1 is a symmetrical C-shaped three-dimensional wide spectrum modulation and demodulation structure layer, and the spectrum image demodulation module 3 stores a spectrum image demodulation algorithm.

[0048] The wide-spectrum modulation structure layer 1 is composed of several wide-spectrum modulation structure units, which constitute N×N channels (including 3×3, 4×4, or 5×5). Each channel corresponds to a metamaterial structure unit array, which can achieve 9-, 16-, or 25-channel spectral modulation and, in principle, ensure a large field of view.

[0049] Each metamaterial structure unit corresponds to a pixel unit of the photoelectric image sensor module 2. Each symmetrical C-shaped metamaterial structure unit and the pixel unit of the photoelectric image sensor module 2 have the same size and are centered on the same axis, thereby achieving pixel-by-pixel spectral modulation.

[0050] The photoelectric image sensor module 2 is designed according to each metamaterial structural unit, collects modulated spectrum signals, and adjusts the gain parameters of the periodic structural unit of each channel to adapt to the modulation characteristics of each channel.

[0051] The spectral image demodulation module 3 is placed at the bottom of the photoelectric image sensor module 2 and connected to it. The demodulation algorithm in the spectral image demodulation module 3 is used to demodulate the modulated spectral signal collected by the photoelectric image sensor module 2 to finally obtain the target image information and spectral information.

[0052] The spectral chip described in this embodiment has the advantages of high spectral resolution, high energy utilization, large field of view, no decrease in spatial resolution, small size, and simple and mature overall production process.

[0053] Implementation Method 2

[0054] This embodiment will be described with reference to FIG. 4 .

[0055] This embodiment is a further example of the wide-spectrum modulation structural unit in the wide-spectrum modulation and demodulation imaging spectroscopy chip described in the first embodiment.

[0056] As shown in Figure 4:

[0057] The wide spectrum modulation structural unit described in this embodiment is two C-shaped in the xz plane view, and the two C-shaped openings are arranged in mirror image relative to each other.

[0058] Specifically:

[0059] The two C-shaped openings face each other, and the outer frame of the broadband modulation structural unit is a rectangular parallelepiped. The rectangular parallelepiped is square in the xz plane, with a side length L adjustable from 1μm to 10μm; the width of the rectangular parallelepiped along the y-axis is adjustable from 1μm to 10μm. The symmetrical C-shaped slit width w at the input and output ends is adjustable from 0.3μm to 3μm, the depth d of the symmetrical C-shaped inner wall groove is adjustable from 0.2μm to 2μm, and the width h of the symmetrical C-shaped inner wall groove is adjustable from 0.1μm to 10μm. The thickness of the symmetrical C-shaped input and output ends is t, and the width of the C-shaped inner wall groove is h, with the following equation: L = h + 2t.

[0060] The designed symmetrical C-shaped three-dimensional structure has a similar optical path for light at each transmission angle from a microscopic perspective, so the spectral transmittance remains unchanged, which in principle ensures a large field of view.

[0061] According to the above parameters, quasi-sinusoidal continuous wide-spectrum modulation line shapes with different frequencies in the 300-1100nm band can be achieved.

[0062] This structure is based on the characteristics of plasmon resonance: when incident light enters the structure, it is reflected by the symmetrical C-shaped inner wall grooves. Depending on the designed dimensions of the symmetrical C-shaped inner wall grooves, plasmon resonance can be generated at the metal / dielectric interface. This structure features an embedded groove design based on a traditional grating model. We analyze the symmetrical C-shaped equivalent grating model, focusing on the key parameters that influence its transmission performance: grating period L, duty cycles w / L and (2d+w) / L, metal grating height h, and the equivalent dielectric grating refractive index n.

[0063] According to the waveguide grating theory, the symmetrical C-type equivalent grating period L is related to the refractive index n and the incident wavelength.

[0064] The relationship between λ, incident angle θ, and diffraction angle ψ is as follows:

[0065] Peak transmittance T peak The relationship between the slit geometry parameters (the slit width w at the incident and exit ends, and the inner wall groove depth d) can be summarized as follows:

[0066] T peak (w,d)≈20w -4 / 5 exp(-0.2dw -3 / 2 )

[0067] The geometric term on the right side of the equation represents the decrease in the transmission peak due to reflection loss, and the exponential term represents the ohmic loss related to both the slit width w at the input and output ends and the inner wall groove depth d. The d in the equation corresponds to the slit width that can meet the transmission peak output under a given slit width.

[0068] Symmetrical C-type equivalent grating and There is a FP-like resonant cavity mode between the metal gratings in the direction. The equivalent medium theory is used to transform the periodic structure of the single-layer metal grating into a three-layer uniform medium structure, i.e., the metal layers with heights of t, h, and t in the Z direction in Figure 4(b).

[0069] The transmission law formula of the FP cavity formed inside the symmetrical C-shaped cavity is as follows:

[0070] Where l = h = 2d + w, φ is the phase change produced when the incident light is reflected from the grating surface, R0 and T0 are the reflection and transmission coefficients, respectively. These parameters can be obtained by incident light illuminating a symmetrical C-type equivalent grating.

[0071] When the incident light resonates in the cavity, the reflected light and the incident light interfere with each other at the output interface, resulting in low grating transmittance, the appearance of troughs, and most of the other energy being reflected.

[0072] The phase difference between the incident light and the reflected light when they meet at the exit interface can be expressed as follows:

[0073] φ=δ+2k0n l h

[0074] K0 is the incident light wave vector, n l is the refractive index of the medium, h is the width of the symmetrical C-shaped inner wall groove, and δ is the phase change caused by light reflection. Resonance occurs if the phase difference is π or an odd multiple of π, and the formula is as follows:

[0075] (2m+1)=δ+2k0n l h

[0076] m is an integer. It is this resonance mode that causes the energy to be confined in the middle dielectric layer, thereby reducing the grating transmittance and causing the trough phenomenon.

[0077] The wide-spectrum modulation structure units are micron-sized and correspond one-to-one with the pixel unit size of the photoelectric image sensor module 2. The unit modulation structures are arranged in an array according to the pixel unit size of the photoelectric image sensor module without sacrificing the original spatial resolution of the photoelectric image sensor. Alternatively, a single spectrum modulation structure can be designed to correspond to N pixels of the photoelectric image sensor, sacrificing some spatial resolution, but increasing the energy utilization of the incident light corresponding to the single spectrum modulation structure by N times.

[0078] Implementation Method 3

[0079] This embodiment is a further example of the photoelectric image sensor module 2 in the wide-spectrum modulation and demodulation imaging spectroscopy chip described in the first embodiment.

[0080] The surface of the photoelectric image sensor module 2 described in this embodiment is prepared with a photosensitive surface that can match the wide-spectrum modulation structure layer 1, which can reduce the impact of the incident light angle, increase the detection field of view, and convert the modulated incident light information into a digital electrical signal. The photoelectric sensor module 2 is provided with a gain control function that matches the several channels, which can realize gain control of each individual channel.

[0081] The pixel size of the photosensitive area of ​​the photoelectric image sensor module 2 matches the size of the broadband modulation structural unit, ranging from 1μm to 10μm. This can be tailored to the specific application scenario and the size requirements of the broadband modulation unit of the symmetrical C-shaped three-dimensional broadband modulation structural layer. The module also features gain control for different channels, as well as automatic gain and noise floor control for both row and column N×N groups. Gain control allows for linear adjustment of the response intensity of each channel, compensating for the reduced dynamic range caused by the modulation process of the symmetrical C-shaped three-dimensional broadband modulation structural layer, ensuring a good dynamic range for the photoelectric image sensor. Gain control can also be used to adjust the linear area of ​​spectral modulation to ensure that the grayscale values ​​of each channel remain within a reasonable dynamic range.

[0082] Implementation Method 4

[0083] This embodiment is a further example of the spectrum image demodulation module 3 in the wide spectrum modulation and demodulation imaging spectrum chip described in the first embodiment.

[0084] The spectral image demodulation module 3 described in this embodiment includes an image signal processor and a built-in spectral image inversion algorithm, which can realize demodulation of collected information and ultimately obtain target image information and spectral information.

[0085] Specifically:

[0086] The image signal processor has a spectral correction function. Due to the difference between the spectrum of visible light and the spectral responsivity of the semiconductor sensor, as well as the influence of lenses, the obtained spectrum will have deviations, so the spectrum must be corrected. The usual practice is to perform spectral correction through an N×N spectral change matrix.

[0087] The spectral image inversion algorithm constructs an N×N linear equation system based on the spectral transmittance of each group of N×N channels (i.e., N×N symmetrical C-shaped three-dimensional wide-spectrum modulation structural units) and the grayscale values ​​on the photoelectric image sensor pixels of the corresponding periodic structural units. By solving the equation system and traversing the entire image, N×N unknowns can be obtained. The unknowns are the intensity values ​​on the N×N spectral segments. By traversing the entire image and calculating the spectral values ​​of the target's N×N spectral segments, the spectral information of the target to be measured can be demodulated.

[0088] Consider that the output signal Oi of the i-th photoelectric image sensor pixel is shown as follows.

[0089] Where χ(λ) represents the spectrum of the measured object, f i (λ) represents the transmittance of the i-th spectral sensor relative to wavelength λ. The multiplication term f i (λ)χ(λ) has non-zero components in the interval [a,b], n i is the system noise or disturbance.

[0090] Spectral inversion can be modeled as a set of linear equations, and the discretized model in matrix form can be expressed as follows:

[0091] O=FX+n

[0092] By solving X in the above equation, the spectral image information of the target to be measured can be obtained.

[0093] Implementation Method Five

[0094] This embodiment is described with reference to FIG2 , FIG3 , FIG4 , FIG5 , FIG6 , FIG7 , FIG8 , FIG9 , FIG10 , FIG11 , FIG12 , and FIG13 .

[0095] This embodiment is a further example of the wide-spectrum modulation and demodulation imaging spectroscopy chip described in Embodiments 1 to 4.

[0096] Figure 3 shows a wide-spectrum modulation and demodulation spectral imaging chip, comprising the wide-spectrum modulation structure layer 1 shown in Figure 2, a photoelectric image sensor module 2, and a spectral image demodulation module 3. The wide-spectrum modulation structure layer is composed of a 3×3 array of metamaterial unit structures with different structural parameters. Each symmetrical C-shaped metamaterial unit corresponds to a photoelectric image sensor pixel unit, achieving pixel-by-pixel spectral modulation. The photoelectric image sensor module is designed based on the symmetrical C-shaped metamaterial unit structure. Each channel periodic unit structure has a gain parameter adjustment to adapt to the modulation characteristics of each channel. The spectral image demodulation algorithm module is placed at the bottom of the photoelectric image sensor and connected to it. Light transmitted to the symmetrical C-shaped three-dimensional wide-spectrum modulation structure is modulated by the structure and then collected by the photoelectric image sensor to generate a modulation image. This image is then output to the spectral image demodulation algorithm module, which then demodulates the collected information to ultimately obtain the target image and spectral information.

[0097] The wide-spectrum modulation spectrum is shown in Figure 4. The photoelectric image sensor module uses a domestically produced BF3005 CMOS image sensor with a pixel size of 6μm × 6μm. It features 3×3 automatic gain control for rows and columns. The gain control for individual channels in the photoelectric image sensor module is shown in Figure 7. By controlling the gain, the linear region of the spectral modulation can be adjusted to ensure that the grayscale values ​​of each channel are within a reasonable dynamic range.

[0098] In this embodiment, a spectral sensor is integrated on a 3×3 grid of 9 pixels of the photoelectric image sensor. In FIG5 , χ(λ) represents the spectrum of the measured object, and f i (λ) represents the transmittance of the i-th spectral sensor with respect to wavelength λ. Considering that the output signal of the i-th spectral sensor is as shown in the following formula.

[0099] Among them, the multiplication term f i (λ)χ(λ) has non-zero components in the interval [a,b], n i is the system noise. Spectral inversion can be modeled as a set of linear equations, and the discretized model in matrix form can be expressed as follows:

[0100] O=FX+n

[0101] Solving for X in the above equation yields the spectral image information of the target being measured. Taking the 24-color card imaging results as an example, the grayscale image is shown in Figure 8(a), the multispectral image is shown in Figure 8(b), and the 8-band imaging results of the spectral chip are shown in Figure 9. Comparisons of the spectrometer test results for some color patches with the chip spectral inversion results are shown in Figures 10-13. The spectral matching degree is greater than 80%.

[0102] Implementation Method 6

[0103] The method for producing a wide-spectrum modulation and demodulation imaging spectroscopy chip described in this embodiment includes:

[0104] Prepare a wide-spectrum modulation structural layer, select a photoelectric image sensor module and a spectral image demodulation module, and connect them in sequence. The preparation method of the wide-spectrum modulation structural layer includes: substrate pretreatment, magnetron sputtering coating, ion beam etching structure, substrate cleaning, spin coating photoresist, soft baking, mask preparation, alignment and exposure, degumming and hard baking, magnetron sputtering coating, alignment mark points, ion beam etching structure, and protective layer plating.

Claims

1. A wide-spectrum modulation and demodulation imaging spectroscopy chip, wherein: The chip comprises, from top to bottom, a wide spectrum modulation structure layer (1), a photoelectric image sensor module (2) and a spectrum image demodulation module (3).

2. A wide spectrum modulation and demodulation imaging spectroscopy chip according to claim 1, wherein: The wide spectrum modulation structural layer (1) is composed of a plurality of wide spectrum modulation structural units, the plurality of wide spectrum modulation structural units constitute N×N channels, and each channel corresponds to a metamaterial structural unit array.

3. A wide spectrum modulation and demodulation imaging spectroscopy chip according to claim 2, wherein: The value of N is 3, 4 or 5.

4. A wide spectrum modulation and demodulation imaging spectroscopy chip according to claim 2, wherein: The wide spectrum modulation structure unit is two C-shaped in the xz plane view, and the two C-shaped openings are arranged in mirror image relative to each other.

5. A wide spectrum modulation and demodulation imaging spectroscopy chip according to claim 4, wherein: The wide spectrum modulation structural unit is a cuboid, which is a square on the xz plane, with a side length L of 1 μm-10 μm, and a width of the cuboid along the y-axis direction of 1 μm-10 μm.

6. A wide spectrum modulation and demodulation imaging spectroscopy chip according to claim 5, wherein: The slit width ω between the incident end and the exit end of the C-type is 0.3μm-3μm; the thickness of the incident end and the exit end is t, the depth d of the inner wall groove of the C-type is 0.2μm to 2μm, the width of the inner wall groove of the C-type is h, and: L=h+2t.

7. A wide spectrum modulation and demodulation imaging spectroscopy chip according to claim 2, wherein: Each wide spectrum modulation structure unit in the wide spectrum modulation structure layer (1) corresponds one to one to each pixel unit in the photoelectric image sensor module (2) and is coaxial.

8. The wide-spectrum modulation and demodulation imaging spectroscopy chip according to claim 1, wherein: The photoelectric image sensor module (2) is used to collect and modulate the light signal projected through the wide spectrum modulation structure layer (1) to obtain a modulated spectrum signal, and to send the modulated spectrum signal to a spectrum image demodulation module (3).

9. The wide spectrum modulation and demodulation imaging spectroscopy chip according to claim 8, wherein: The spectral image demodulation module (3) is used to demodulate the modulated spectral signal to obtain target image information and spectral information.

10. A method for producing a wide-spectrum modulation and demodulation imaging spectrum chip, comprising: Prepare a wide-spectrum modulation structural layer, select a photoelectric image sensor module and a spectral image demodulation module, and connect them in sequence. The preparation method of the wide-spectrum modulation structural layer includes: substrate pretreatment, magnetron sputtering coating, ion beam etching structure, substrate cleaning, spin coating of photoresist, soft baking, preparation of mask, alignment and exposure, degumming and hard baking, magnetron sputtering coating, alignment mark points, ion beam etching structure, and coating of protective layer.

Images