Substrate processing apparatus

Abstract

Provided is a technology relating to a substrate processing apparatus. A substrate processing apparatus may comprise a process chamber, a substrate support structure, and a gas injection structure. The process chamber comprises a plurality of process regions in which a plurality of substrates are processed. The substrate support structure may support a plurality of substrates which are spaced apart certain intervals from each other so that one substrate is positioned in each of the plurality of process regions, and may rotate so that the plurality of substrates may sequentially pass through the plurality of process regions. The gas injection structure is positioned above the process chamber so as to face the substrate support structure. The gas injection structure comprises: a plurality of process gas injection portions which are each provided for one of the plurality of process regions and which inject process gas respectively to the facing substrates; and a plurality of purge gas injection portions which are positioned to respectively surround the process gas injection portions in the plurality of process regions and inject purge gas toward the substrate support structure.

Description

Substrate processing device

[0001] The present invention relates to a substrate processing device, and more specifically, to a substrate processing device capable of processing a plurality of substrates.

[0002] Typically, to manufacture semiconductor devices, various processes are performed in a substrate processing device that includes a vacuum-atmosphere process chamber. For example, a substrate may be loaded into the process chamber, and a process may be performed to deposit a thin film on the substrate or to etch the thin film. Within the substrate processing device, the substrate is supported by a substrate support structure installed within the process chamber, and process gases are supplied to the substrate through a gas injection unit within the process chamber, allowing the substrate to be processed.

[0003] Currently, a technology has been proposed for processing substrates by spraying at least one source gas and at least one reactant gas onto multiple substrates within one chamber to increase productivity.

[0004] Such a substrate processing device requires that at least one source gas and at least one reaction gas be injected independently, and that at least one source gas and at least one reaction gas remain in the space inside the chamber and do not act as a source of contamination.

[0005] The present invention provides a substrate processing device capable of improving thin film quality. However, these tasks are exemplary and the scope of the present invention is not limited thereby.

[0006] According to an embodiment of the present invention for solving the above problem, a substrate processing device may include a process chamber, a substrate support structure, and a gas injection structure. The process chamber may include a plurality of process regions for processing a plurality of substrates. The substrate support structure may be positioned within the process chamber and may support a plurality of substrates spaced apart at a predetermined interval such that one substrate is positioned per each of the plurality of process regions, and may be configured to rotate so that the plurality of substrates sequentially pass through the plurality of process regions. The gas injection structure may be positioned above the process chamber so as to face the substrate support structure. The gas injection structure may include a plurality of process gas injection units, one for each of the plurality of process regions, each for injecting a process gas to the facing substrate, and a plurality of purge gas injection units positioned so as to surround the process gas injection units for each of the plurality of process regions and for injecting a purge gas toward the substrate support structure.

[0007] According to embodiments of the present invention, a purge gas injection unit is installed in a gas injection structure surrounding a plurality of process gas injection units. At this time, the gas injection structure is configured such that the shortest vertical distance between the purge gas injection unit and an extension line of the substrate surface is greater than the shortest vertical distance between the process gas injection unit and the substrate (or susceptor plate). Accordingly, residual process gases can be effectively discharged to the exhaust structure through the purge gas injection unit. Accordingly, contamination inside the process chamber can be prevented, and the quality of the thin film can be improved.

[0008] FIG. 1 is a cross-sectional view schematically showing a substrate processing device according to one embodiment of the present invention.

[0009] FIG. 2 is a plan view showing a substrate support unit of a substrate processing device according to one embodiment of the present invention.

[0010] FIG. 3 is a bottom view showing a gas injection structure of a substrate processing device according to one embodiment of the present invention.

[0011] Figure 4 is a schematic cross-sectional view of a substrate processing device according to one embodiment of the present invention.

[0012] FIG. 5 is a perspective view schematically showing a process area of ​​a substrate processing device according to one embodiment of the present invention.

[0013] FIG. 6 is an exploded perspective view of a gas injection structure including a purge gas injection unit according to one embodiment of the present invention.

[0014] Figure 7 is a perspective view showing a purge plate according to one embodiment of the present invention.

[0015] FIG. 8 is an enlarged cross-sectional view of part B of FIG. 4 according to one embodiment of the present invention.

[0016] FIGS. 9 and 10 are schematic cross-sectional views of a gas injection structure and a substrate support structure according to one embodiment of the present invention.

[0017] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0018] Embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art, and the following embodiments may be modified in various other forms, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to more faithfully and completely convey the spirit of the present invention to those skilled in the art. In addition, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation.

[0019] FIG. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a plan view showing a substrate support part of a substrate processing apparatus according to an embodiment of the present invention. FIG. 3 is a bottom view showing a gas injection structure of a substrate processing apparatus according to an embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention. FIG. 5 is a perspective view schematically showing a process area of ​​a substrate processing apparatus according to an embodiment of the present invention. For reference, FIG. 4 is a cross-sectional view taken along line a-a' of FIGS. 2 and 3.

[0020] Referring to FIGS. 1 to 5, the substrate processing device (10) may include a process chamber (100), a substrate support structure (200), a gas injection structure (300), and an exhaust structure (400).

[0021] The above process chamber (100) can define a processing space (A) for processing a plurality of substrates. As will be described later, the processing space (A) can include a plurality of independently separated processing areas without a vacuum break. The process chamber (100) can be, for example, a thin film deposition chamber. In addition, the process chamber (100) can be an ALD (atomic layer deposition) chamber according to a space-time division method.

[0022] The above process chamber (100) may include a chamber body (110) and a chamber lid (120).

[0023] The chamber body (110) has an open upper portion, and the chamber lid (120) can be coupled to the upper portion of the chamber body (110) to define the processing space (A). Furthermore, a sealing member for vacuum sealing, such as an O-ring, can be coupled between the chamber body (110) and the chamber lid (120). Furthermore, an openable gate (G) can be installed on the side wall of the chamber body (110) to allow movement of a plurality of substrates (S).

[0024] The substrate support structure (200) is positioned within the processing space (A) and can support a plurality of substrates. The substrate support structure (200) can be rotated so that the plurality of substrates can sequentially enter the plurality of process regions.

[0025] For example, the substrate support structure (200) may include a susceptor plate (210) and a shaft (220).

[0026] The susceptor plate (210) may face the substrate injection structure (300). The susceptor plate (210) may include a plurality of mounting grooves in which the plurality of substrates are respectively mounted. The plurality of mounting grooves may be provided in an appropriate number in consideration of the size and processing speed of the susceptor plate (210). As an exemplary embodiment, the susceptor plate (210) may include first to fourth mounting grooves (PH1 to PH4). Accordingly, the first to fourth substrates (S1 to S4) may be sequentially mounted in the first to fourth mounting grooves (PH1 to PH4).

[0027] The above shaft (220) is coupled to the susceptor plate (210) and can raise and lower and rotate the susceptor plate (210).

[0028] The substrate processing device (100) may further include a heater unit (250). The heater unit (250) may be provided inside the chamber body (110) below the first to fourth mounting grooves (PH1-PH4) of the susceptor plate (210). By means of the heater unit (250), a plurality of substrates (S1-S4) may be heated to an appropriate temperature.

[0029] The gas injection structure (300) can be coupled to the bottom surface of the chamber lid (120) so as to face the substrate support structure (200).

[0030] The above gas injection structure (300) may include a plurality of process gas injection units (310), a plurality of separation gas injection units (320), a curtain gas injection unit (330), and a plurality of purge gas injection units (340).

[0031] As an exemplary embodiment, the number of the plurality of process gas injection units (310) may correspond to the number of the plurality of settling grooves. For example, the plurality of process gas injection units (310) may include first to fourth process gas injection units (310a-310d).

[0032] The first to fourth settling grooves (PH1-PH4) may be arranged at 90° intervals along the circumference of the susceptor plate (210) having a substantially circular structure. Each of the first to fourth process gas injection units (310a-310d) may be coupled to the bottom surface of the chamber lid (120) so as to correspond to the first to fourth settling grooves (PH1-PH4).

[0033] The first to fourth process gas injection units (310a-310d) may each have a shower head structure.

[0034] For example, the first and fourth process gas injection units (310a, 310d) can inject the first reaction gas and the second reaction gas, respectively. The second and third process gas injection units (310b, 310c) can inject the first source gas and the second source gas, respectively.

[0035] As another example, the first process gas injection unit (310a) can inject an inhibitor gas and a purge gas. The second process gas injection unit (310b) can inject a first source gas and a purge gas. The third process gas injection unit (310c) can inject a second source gas and a purge gas. The fourth process gas injection unit (310d) can inject a reaction gas and a purge gas.

[0036] For example, the inhibitor gas can suppress the first or second source gas from being adsorbed onto the substrate. The first and second source gases can include major components constituting a thin film to be deposited on the substrate (S1-S4). The reaction gas can react with the first and second source gases, respectively, to adsorb the major components onto the substrate.

[0037] The plurality of separation gas injection units (320) may be respectively positioned between adjacent first to fourth process gas injection units (310a-310d). For example, the plurality of separation gas injection units (320) may include first to fourth separation gas injection units (320a-320d).

[0038] As an exemplary embodiment, the first separation gas injection unit (320a) is arranged in the form of a line pattern between the first and second process gas injection units (310a, 310b), so as to prevent the first process gas of the first process gas injection unit (310a) and the second process gas of the second process gas injection unit (310b) from mixing within the processing area. The second separation gas injection unit (320b) is arranged in the form of a line between the second and third process gas injection units (310b, 310c), so as to prevent the second process gas of the second process gas injection unit (310b) and the third process gas of the third process gas injection unit (310c) from mixing within the processing area. The third separation gas injection unit (320c) is arranged in a line shape between the third and fourth process gas injection units (310c, 310d), so that the third process gas of the third gas injection unit (310c) and the fourth process gas of the fourth gas injection unit (310d) can be prevented from mixing within the processing area. The fourth separation gas injection unit (320d) is arranged in a line shape between the fourth and first gas injection units (310d, 310a), so that the fourth process gas of the fourth process gas injection unit (310d) and the first process gas of the first process gas injection unit (310a) can be prevented from mixing within the processing area.

[0039] The first to fourth separation gas injection units (310a-310d) can inject separation gas. The separation gas may include, for example, an inert gas such as argon (Ar) gas or nitrogen (N2) gas.

[0040] For example, when the first to fourth process gas injection units (310a-310d) are arranged at 90° intervals, the first and third separation gas injection units (320a, 320c) and the second and fourth separation gas injection units (320b, 320d) can extend in directions intersecting each other.

[0041] The curtain gas injection unit (330) may be positioned, for example, at the intersection of the first and third separation gas injection units (320a, 320c), and the second and fourth separation gas injection units (320b, 320d). The curtain gas injection unit (330) may prevent mixing of process gases between the process gas injection units (310a and 310c, and 310b and 310d) that are arranged diagonally. For example, the curtain gas may include an inert gas such as argon (Ar) gas or nitrogen (N2) gas. As an exemplary embodiment, the lower surface of the curtain gas injection unit (330) may be positioned on the same line as the lower surfaces of the first to fourth separation gas injection units (320a-320d). The lower surfaces of the curtain gas injection unit (330) and the first to fourth separation gas injection units (320a-320d) may represent opposing surfaces of the substrate support structure (200).

[0042] Accordingly, one process area may include two adjacent separation gas injection units (320a-320d), the curtain gas injection unit (330), and one process gas injection unit (310a-310d) positioned between the two adjacent separation gas injection units (320a-320d).

[0043] As an exemplary embodiment, when the gas injection structure (300) includes first to fourth process gas injection units (310a-310d) and first to fourth separation gas injection units (320a-320a), the processing space (A) may include first to fourth process areas (A1-A4).

[0044] The first process area (A1) may be a three-dimensional space surrounded by the fourth separation gas injection unit (320d), the first separation gas injection unit (320a), and the curtain gas injection unit (330). Accordingly, the first process gas injection unit (310a) may inject the first process gas to a corresponding substrate. At this time, the fourth and second process gases injected from the fourth and second process gas injection units (310b, 310d) adjacent to the first process gas injection unit (310a) are blocked from entering the first process area (A1) by an inert gas barrier formed by inert gases injected from the fourth separation gas injection unit (320d), the first separation gas injection unit (320a), and the curtain gas injection unit (330), respectively.

[0045] The second process area (A2) may be a three-dimensional space surrounded by the first separation gas injection unit (320a), the second separation gas injection unit (320b), and the curtain gas injection unit (330). Accordingly, the second process gas injection unit (310b) may inject the second process gas to any one of the substrates corresponding thereto. At this time, the first and third process gases injected from the first and third process gas injection units (310a, 310c) adjacent to the second process gas injection unit (310b) are blocked from entering the second process area (A2) by an inert gas barrier formed by the inert gases injected from the first separation gas injection unit (320a), the second separation gas injection unit (320a), and the curtain gas injection unit (330), respectively.

[0046] The third process area (A3) may be a three-dimensional space surrounded by the second separation gas injection unit (320b), the third separation gas injection unit (320c), and the curtain gas injection unit (330). Accordingly, the third process gas injection unit (310c) may inject the third process gas to a corresponding substrate. At this time, the second and fourth process gases injected from the second and fourth process gas injection units (310b, 310d) adjacent to the third process gas injection unit (310c) are blocked from entering the third process area (A3) by an inert gas barrier formed by the inert gases injected from the second separation gas injection unit (320b), the third separation gas injection unit (320c), and the curtain gas injection unit (330), respectively.

[0047] The fourth process area (A4) may be a three-dimensional space surrounded by the third separation gas injection unit (320c), the fourth separation gas injection unit (320d), and the curtain gas injection unit (330). Accordingly, the fourth process gas injection unit (310d) may inject the fourth process gas to a corresponding substrate. At this time, the third and first process gases injected from the third and first process gas injection units (310c, 310a) adjacent to the fourth process gas injection unit (310d) are blocked from entering the fourth process area (A4) by an inert gas barrier formed by the inert gases injected from the third separation gas injection unit (320c), the fourth separation gas injection unit (320d), and the curtain gas injection unit (330), respectively.

[0048] The plurality of purge gas injection units (340) may be provided in each of the plurality of process areas (A1-A4). The plurality of purge gas injection units (340) may inject purge gas toward the susceptor plate (210) to prevent the first to fourth process gases from remaining on the surface of the susceptor plate (210) outside the plurality of substrates (S1-S4) and the inner walls of the process chamber (100).

[0049] Ideally, the first to fourth process gases injected from the first to fourth process gas injection units (310a-310d) should travel straight toward the plurality of opposing substrates (S1-S4), but for various reasons, they may diffuse to the susceptor plate (210) outside the plurality of substrates (S1-S4) and the inner walls of the process chamber (100). In addition, during the rotation process of the substrate support structure (200), residues of the first to fourth process gases may fall on the susceptor plate (210) outside the plurality of substrates (S1-S4).

[0050] These process gas residues may float inside the process chamber (100) and be adsorbed on thin films (not shown) deposited on top of multiple substrates (S1-S4), thereby deteriorating the quality of the thin films.

[0051] The substrate processing device (10) of the present embodiment installs purge gas injection units (340) in the plurality of process areas (A1-A4) so ​​as to surround the first to fourth process gas injection units (310a-310d). Accordingly, when the first to fourth process gases are injected from the first to fourth process gas injection units (310a-310d) or the substrate support structure (200) is rotated, the process gas can be prevented from remaining on the surface of the susceptor plate (210) and the inner wall of the process chamber (100). The purge gas can include, for example, an inert gas.

[0052] As an exemplary embodiment, the purge gas injection unit (340) may include first to fourth purge gas injection units (340a-340d).

[0053] The first purge gas injection unit (340a) may be positioned on the upper surface of the first process area (A1). For example, the first purge gas injection unit (340a) may be positioned to have a plurality of purge holes on the upper surface of the first process area (A1) excluding the first process gas injection unit (310a), the fourth separation gas injection unit (320d), the first separation gas injection unit (320a), and the curtain gas injection unit (330).

[0054] The second purge gas injection unit (340b) may be positioned on the upper surface of the second process area (A2). For example, the second purge gas injection unit (340b) may be positioned to have a plurality of purge holes on the upper surface of the second process area (A2) excluding the second process gas injection unit (310b), the first separation gas injection unit (320a), the second separation gas injection unit (320b), and the curtain gas injection unit (330).

[0055] The third purge gas injection unit (340c) may be positioned on the upper surface of the third process area (A3). For example, the third purge gas injection unit (340c) may be positioned to have a plurality of purge holes on the upper surface of the third process area (A2) excluding the third process gas injection unit (310c), the second separation gas injection unit (320b), the third separation gas injection unit (320c), and the curtain gas injection unit (330).

[0056] The fourth purge gas injection unit (340d) may be positioned on the upper surface of the fourth process area (A4). For example, the fourth purge gas injection unit (340d) may be positioned to have a plurality of purge holes on the upper surface of the fourth process area (A2) excluding the fourth process gas injection unit (310d), the third separation gas injection unit (320c), the fourth separation gas injection unit (320d), and the curtain gas injection unit (330).

[0057] FIG. 6 is a schematic exploded perspective view of a gas injection structure including a purge gas injection unit according to one embodiment of the present invention.

[0058] As illustrated in FIG. 6, the first to fourth purge gas injection units (340a-340d) may be individually coupled to each process area (A1-A4). The first to fourth purge gas injection units (340a-340d) may be coupled to the chamber lid (120), for example. However, the present invention is not limited thereto, and the first to fourth purge gas injection units (340a-340d) may be integrally configured and coupled to the chamber lid (120).

[0059] Fig. 7 is a perspective view showing a purge plate according to one embodiment of the present invention. Fig. 8 is an enlarged cross-sectional view of portion B of Fig. 4 according to one embodiment of the present invention. For reference, Fig. 8 is a cross-sectional view taken along line c-c' of Fig. 7.

[0060] Referring to FIGS. 7 and 8, the process gas injection unit (310) can be coupled to the chamber lid (120) through the insertion area (310H) of the purge gas injection unit (340).

[0061] For example, the process gas injection unit (310) may include a top plate (311), a middle plate (312), and an end plate (313). The top plate (311) may be connected to a process gas supply source (not shown) and may be positioned at the top. The middle plate (312) may be interposed between the top plate (311) and the end plate (313). The end plate (313) includes a plurality of injection holes (314) and may inject the process gas to the opposing substrate through the plurality of injection holes (314). A gap (H1) for gas diffusion exists between the top plate (311) and the middle plate (312), and a gap (H2) for gas diffusion also exists between the middle plate (312) and the end plate (313).

[0062] The above purge gas injection unit (340) may include a purge gas inlet unit (342) and a purge plate (345).

[0063] First, the purge plate (345) may be attached to the bottom surface of the chamber lid (120). The purge plate (345) may have a purge gas diffusion portion (344) having a groove shape. By the purge gas diffusion portion (344), the bottom surface of the purge plate (345) facing the substrate support structure (200) may be spaced apart from the chamber lid (120, or the body of the gas injection structure) by the depth of the purge gas diffusion portion (344). The purge gas diffusion portion (344) may have, for example, a fan shape.

[0064] For example, the purge plate (345) may be coupled to the chamber lid (120) between the adjacent separation gas injection units (320a-320d) and the curtain gas injection unit (330) to define the process area (A1-A4) as described above. In addition, the purge plate (345) may include a plurality of purge holes (347). The plurality of purge holes (347) may be configured to penetrate the purge plate (345) located below the purge gas diffusion unit (344).

[0065] The purge gas inlet (342) may be provided inside the chamber lid (120). For example, the purge gas inlet (324) may be formed to penetrate the chamber lid (120), receive purge gas from the purge gas supply unit (380) located outside the process chamber (100), and guide it to the purge gas diffusion unit (344).

[0066] The purge gas inlet (342) is configured to meet the outer edge of the purge gas diffusion portion (344), for example, the central portion of a fan-shaped arc. The intersection where the purge gas inlet (342) and the purge gas diffusion portion (344) meet will be referred to as a drop portion (DP). The drop portion may have a shape protruding outward from the arc, and may have a certain depth like the purge gas diffusion portion (344). At this time, the purge holes are not arranged below the drop portion (DP). The purge gas provided through the purge gas inlet (342) as described above may be diffused within the purge gas diffusion portion (344) and then sprayed toward the substrate support structure (200) through the plurality of purge holes (347).

[0067] The above purge plate (345) may further include a gas distribution portion (348) protruding toward the drop area at a position horizontally facing the drop area. The gas distribution portion (348) may be positioned at the edge of the insertion area (310H) of the process gas injection portion (310). The gas distribution portion (348) may evenly spread the purge gas provided through the purge gas inlet portion (342) and the drop area (DP) to the purge gas diffusion portions (344) on both sides of the gas injection portion (348).

[0068] As an exemplary embodiment, the pitch of the plurality of purge holes (347) may be gradually reduced as they move away from the purge gas inlet (342) or drop area (DP).

[0069] As an example, when the diameters of the purge holes (347) are the same, the number of purge holes (347) of the first region (R1) where a relatively large amount of purge gas is provided is configured to be smaller than the number of purge holes (347) of the second region (R2) where a relatively small amount of purge gas is provided, so that the injection rate of the purge gas injection unit (340) can be evenly controlled. As another example, when the diameters of the purge holes (347) are the same, the spacing between the purge holes (347) of the first region (R1) where a relatively large amount of purge gas is provided is configured to be larger than the spacing between the purge holes (347) of the second region (R2) where a relatively small amount of purge gas is provided, so that the injection rate of the purge gas injection unit (340) can be evenly controlled.

[0070] As an exemplary embodiment, the amount of purge gas injected from the purge gas injection unit (340) may be an amount that can effectively discharge residual process gases outside the substrate (S1-S4) without being affected by process gases injected on the upper portion of the substrate (S1-S4). For example, the purge gas injection unit (340) may supply purge gas at a level of 1 / 17 to 1 / 12 of the amount of process gases injected onto the substrate (S1-S4).

[0071] Again, referring to FIGS. 1 to 8, the exhaust structure (400) can discharge a plurality of gases injected from the gas injection structure (300) to the outside of the process chamber (100).

[0072] The above exhaust structure (400) may include a flow path section (410), a lower flow path control section (430), an upper flow path control section (440), and at least one exhaust port (450).

[0073] The above-mentioned flow path (410) may be configured in an annular shape along the outer periphery of the substrate support structure (200). The above-mentioned flow path (410) is configured in a trench shape and is configured to be lower than the surface of the susceptor plate (210), so that process gas residues on the susceptor plate (210) can flow into the flow path (410).

[0074] The lower flow control unit (430) can divide the interior of the flow section (410) into at least two, and can induce the process gases to sufficiently remain in the corresponding process areas (A1-A4).

[0075] For example, the lower euro control unit (430) may include a bulkhead unit (431) and a baffle plate (435).

[0076] The above-mentioned bulkhead (431) is configured, for example, in a form that shields the inside of the above-mentioned flow path (410). At least two of them can be inserted into the above-mentioned flow path (410).

[0077] As an exemplary embodiment, the flow path section (410) may be divided into a flow path section (hereinafter, first flow path section: 410a) outside the first and fourth process regions (A1, A4) and a flow path section (hereinafter, second flow path section: 410b) outside the second and third process regions (A2, A3) by the partition wall section (431). Accordingly, the first reaction gas injected from the first process gas injection section (310a), the second reaction gas injected from the fourth process gas injection section (310d), other purge gases, separation gases, and curtain gases may flow into the first flow path section (410a). Meanwhile, the first source gas injected from the second process gas injection unit (310b), the second source gas injected from the third process gas injection unit (310c), the purge gas, the separation gas, and the curtain gas may be introduced into the second flow path unit (410b). The baffle plate (435) may be a cover that partially covers the upper portions of the first and second flow path units (410a, 410b). For example, the baffle plate (435) may be positioned at a portion facing each of the plurality of substrates (S1-S4). The baffle plate (435) allows the process gases to remain on the substrates (S1-S4) for as long as possible for a set process time without being directly discharged to the first or second flow path unit (410a, 410b). Since the above baffle plate (435) is formed in the form of a cover only for the upper portion of the euro section (410), residual process gases can flow to the lower portion of the baffle plate (435).

[0078] The upper euro control unit (440) may include a first upper blocking unit (441) and a second upper blocking unit (445).

[0079] The first upper blocking portion (441) may be positioned on the lower surface of the gas injection structure (300) corresponding to the partition wall portion (431). For example, when the chamber body (110) and the chamber lid (120) are coupled, the first upper blocking portion (441) may be in contact with the partition wall portion (431). The height of the first upper blocking portion (441) may be such that particles due to friction are not generated when it comes into contact with the partition wall portion (431).

[0080] The first upper blocking portion (441) is positioned on the partition wall portion (431), and the second upper blocking portion (445) is positioned on the baffle plate (435). Accordingly, process gases (e.g., reaction gases) within the first flow path space formed by the first flow path portion (410a) and its upper region, and process gases (e.g., source gases) within the second flow path space formed by the second flow path portion (410b) and its upper region are prevented from mixing with each other within the flow path portion (410). In addition, by the baffle plate (435) and the second upper blocking portion (445), the process gases are prevented from being adsorbed onto the inner wall of the process chamber or flowing into the flow path portion (410) simultaneously with injection, and participate in the reaction in the corresponding process region (A1-A4) for a set period of time, thereby improving the reactivity of the thin film.

[0081] The above exhaust port (450) may include a first exhaust port (451) and a second exhaust port (452). The first exhaust port (451) is located at the bottom of the first flow path section (410a) and may discharge the reaction gas, purge gas, separation gas, and curtain gas introduced into the first flow path section (410a) to the outside. The second exhaust port (452) is located at the bottom of the second flow path section (410b) and may discharge the source gas, purge gas, separation gas, and curtain gas introduced into the second exhaust port (452) to the outside.

[0082] In this way, by separating and discharging the gas, the formation of powder or particles due to process gases within the euro section (410) is prevented, thereby improving exhaust efficiency.

[0083] Details of such exhaust structure (400) are disclosed in detail in Republic of Korea Patent Application No. 10-2023-0183235 filed by the applicant of the present invention, which application is incorporated herein by reference.

[0084] The above substrate processing device (10) may include a control unit (not shown) that controls the substrate support structure (200) and the gas injection structure (300).

[0085] The above control unit can control the rotation and stop operations of the substrate support structure (200). The control unit can sequentially cause the first to fourth substrates (S1-S4) to enter the first to fourth process areas (A1-A4), and then inject the first to fourth process gases, respectively, to control a reaction for forming an atomic layer on the first to fourth substrates (S1-S4). The operation of such a control unit is described in detail in Korean Patent Application No. 10-2024-0128135 filed by the applicants of the present invention, and will be incorporated herein.

[0086] FIGS. 9 and 10 are schematic cross-sectional views of a gas injection structure and a substrate support structure according to one embodiment of the present invention. For reference, FIG. 9 is a cross-sectional view taken along line a-a' of FIGS. 2 and 3, and FIG. 10 is a cross-sectional view taken along line b-b' of FIGS. 2 and 3.

[0087] Referring to FIGS. 1 to 10, the substrate support structure (200) is rotated so that a plurality of substrates (S1 to S4) can face the first to fourth process gas injection units (310a to 310d), respectively, and then the substrate support structure (200) is stopped for injection of the first and fourth process gases.

[0088] At this time, the shortest distance between the first to fourth process gas injection units (310a-310d) and the corresponding substrates (S1-S4) may be a first distance (d1). The shortest distance between the purge gas injection units (340a-340d) and the horizontal extension line (HL) connecting the plurality of substrates (S1-S4) may be a second distance (d2) greater than the first distance (d1). Meanwhile, the shortest distance between the curtain gas injection unit (330) and the separation gas injection units (320a-320d) and the horizontal extension line (HL) connecting the plurality of substrates (S1-S4) may be a third distance (d3) smaller than the second distance (d2). For example, the third distance (d3) may be equal to or shorter than the first distance (d1).

[0089] The first to third distances (d1, d2, d3) can be adjusted by changing the joint structure of the process gas injection units (310a-310d), the separation gas injection units (320a-320d), the curtain gas injection unit (330), and the purge gas injection units (340a-340d). However, the present invention is not limited thereto, and the thickness of each of the first to fourth process gas injection units (310a-310d), the first to fourth separation gas injection units (320a-320d), the curtain gas injection unit (330), and the first to fourth purge gas injection units (340a-340d), or the depth of the settling grooves (PH1-PH4), can be changed to adjust the distance between the substrate support structure (200) and the gas injection structure (300).

[0090] As the vertical shortest distance between the process gas injection units (310a-310d) and the substrates (S1-S4) among the gas injection structures (300) is set to be the narrowest, and the vertical shortest distance between the purge gas injection units (340a-340d) and the extension lines extending horizontally along the surfaces of the substrates (S1-S4) is set to be the largest, the pressure in the space between the process gas injection units (310a-310d) and the substrates (S1-S4) in the first and fourth process areas (A1-A4) becomes the highest.

[0091] Accordingly, the process gases injected from the process gas injection units (310a-310d) are injected straight onto the substrates (S1-S4) under relatively high pressure. Thereafter, the process gases undergo a reaction such as adsorption or removal with the resultant surface on the substrates (S1-S4), and the remaining process gases upon completion of the reaction move to the space between the purge gas injection units (340a-340d) and the susceptor plate (210) having relatively low pressure.

[0092] Since the open flow path (410) is located on the outer periphery of the purge gas injection unit (340a-340d) and the corresponding susceptor plate (220), the residual process gases can be easily discharged to the flow path (410) together with the purge gas injected from the purge gas injection unit (340a-340d).

[0093] According to embodiments of the present invention, a purge gas injection unit is installed in a gas injection structure surrounding a plurality of process gas injection units. At this time, the gas injection structure is configured such that the shortest vertical distance between the purge gas injection unit and an extension line of the substrate surface is greater than the shortest vertical distance between the process gas injection unit and the substrate (or susceptor plate). Accordingly, residual process gases can be effectively discharged to the exhaust structure through the purge gas injection unit. Accordingly, contamination inside the process chamber can be prevented, and the quality of the thin film can be improved.

[0094] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will appreciate that various modifications and equivalent alternative embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims.

[0095] 100: Process chamber 110: Chamber body

[0096] 120: Chamber lid 200: Substrate support structure

[0097] 300: Gas injection unit 310a-310d: Process gas injection units

[0098] 320a-320d: Separation gas injection units

[0099] 330: Curtain gas injection unit 340a-340d: Purge gas injection units

[0100] 400: Exhaust gas structure

Claims

1. A process chamber comprising a plurality of process areas for processing a plurality of substrates; A substrate support structure positioned within the process chamber, supporting a plurality of substrates spaced apart at a predetermined interval so that one substrate is positioned per each of the plurality of process regions, and configured to be rotatable so that the plurality of substrates pass through the plurality of process regions sequentially; and A gas injection structure is included which is positioned above the process chamber so as to face the substrate support structure. The above gas injection structure is, A plurality of process gas injection units, each provided for each of the plurality of process areas, each injecting a process gas onto the facing substrate; and A substrate processing device including a plurality of purge gas injectors positioned to surround the process gas injectors for each of the plurality of process areas and injecting purge gas toward the substrate support structure.

2. In paragraph 1, A substrate processing device, characterized in that the shortest distance between the plurality of process gas injection units and the plurality of substrates facing the plurality of process gas injection units is shorter than the shortest distance between the plurality of purge gas injection units and the horizontal extension lines of the plurality of substrates.

3. In paragraph 2, The above gas injection structure is, A substrate processing apparatus further comprising a plurality of separate gas injection units, each positioned between adjacent process gas injection units, to define the plurality of process regions.

4. In paragraph 3, A substrate processing device, characterized in that the shortest distance between the plurality of separation gas injection units and the horizontal extension lines of the plurality of substrates is shorter than the shortest distance between the plurality of purge gas injection units and the horizontal extension lines of the plurality of substrates.

5. In paragraph 3, A substrate processing device further comprising a curtain gas injection unit positioned at the center where the plurality of separated gas injection units meet and preventing mixing of the process gases between the plurality of process areas arranged in a diagonal direction.

6. In paragraph 5, A substrate processing device, characterized in that the shortest distance between the curtain gas injection unit and the horizontal extension lines of the plurality of substrates is shorter than the shortest distance between the horizontal extension lines of the plurality of purge gas injection units and the plurality of substrates.

7. In paragraph 6, A substrate processing device, characterized in that the shortest distance between the plurality of separated gas injection units and the horizontal extension lines of the plurality of substrates, and the shortest distance between the curtain gas injection units and the horizontal extension lines of the plurality of substrates are substantially the same.

8. In paragraph 1, Each of the above plurality of purge gas injection units, A purge plate coupled to the bottom surface of the lead of the process chamber and including a purge gas diffusion portion therein and a plurality of purge holes positioned below the purge gas diffusion portion; and A substrate processing device including a purge gas inlet provided inside the lead and guiding the purge gas provided from outside the process chamber to the purge gas diffusion unit.

9. In paragraph 8, The above purge gas diffusion section has a substantial fan shape, The above purge gas diffusion unit includes a drop area connected to the purge gas inlet unit, and the drop area is a substrate processing device that protrudes from the center portion of the fan-shaped arc toward the outer portion of the arc.

10. In paragraph 9, The above purge plate further includes a gas distribution portion protruding toward the drop area at a position horizontally facing the drop area, A substrate processing device in which the gas distribution unit is configured to distribute the purge gas provided from the drop area to the purge gas diffusion units on both sides of the gas distribution unit.

11. In paragraph 8, A substrate processing device wherein the plurality of purge holes are located in the purge plate below the purge gas diffusion unit.

12. In paragraph 11, A substrate processing device wherein the pitch between the plurality of purge holes gradually decreases as it moves away from the purge gas inlet.

13. In paragraph 1, A substrate processing device further comprising an exhaust structure configured to discharge gases ejected from the gas injection structure to the outside of the process chamber.

14. In paragraph 13, The above exhaust structure is, A flow path formed along the outer periphery of the substrate support structure; A flow path control unit that divides the inside of the above flow path and the upper area of ​​the above flow path into at least two flow path spaces according to the type of the process gas, and confines the process gases to the plurality of process regions corresponding to the process gas injection unit; and A substrate processing device including at least two exhaust ports, each of which is connected to the bottom surface of the above-described euro spaces and discharges the gases ejected from the gas ejection structure to the outside of the process chamber.

15. In paragraph 14, The above plurality of process gases include a first source gas, a second source gas, a first reaction gas, and a second reaction gas, The above Euro control unit, At least two baffle sections installed inside the above-mentioned euro section to define a first euro space for discharging the first and second reaction gases, and a second euro space for discharging the first and second source gases; and A substrate processing device including a first upper blocking member coupled to the gas injection structure and installed at a position facing the partition wall portion, the first and second flow path spaces being defined together with the partition wall portion.

16. In paragraph 15, The above Euro control unit, A baffle plate that shields the upper surface of the path section so that the plurality of process gases injected from the plurality of process gas injection units remain in the plurality of process areas; and A substrate processing device including a second upper blocking member coupled to the gas injection structure corresponding to the baffle plate or to the lid of the process chamber, and confining the process gases together with the baffle plate within the process area, respectively.

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