Dual-band fusion and multiplexing frequency source, chips, radio-frequency transceiver, system, and device

Abstract

The present application belongs to the technical field of wireless communications and radar systems. Disclosed are a dual-band fusion and multiplexing frequency source, chips, a radio-frequency transceiver, a system, and a device. The system comprises: a full-function millimeter-wave CMOS 4+1 phased array chip, which is connected to an antenna end, and is used for realizing signal processing and frequency conversion between a millimeter-wave signal and a C-band intermediate-frequency signal, performing phase control and gain adjustment on the millimeter-wave signal, and providing an internal frequency source and a calibration function; a C-band front end, which is connected to the antenna end, and is used for receiving or transmitting a C-band signal; a C-band / intermediate-frequency transceiver multiplexing chip, which is used for performing frequency conversion between a C-band or intermediate-frequency signal and a baseband signal in a multiplexing manner, and performing signal processing and gain control on the C-band intermediate-frequency signal; a dual-band fusion and multiplexing frequency source, which is used for providing a local oscillator signal; and an all-digital control logic circuit, which is used for providing a control instruction. The present application improves the efficiency and performance of dual-band joint communications.

Description

Dual-frequency fusion multiplexing frequency source, chip, radio frequency transceiver, system and device TECHNICAL FIELD

[0001] The present application relates to the field of wireless communication and radar systems, in particular to a dual-frequency fusion multiplexing frequency source, chip, radio frequency transceiver, system and device. BACKGROUND

[0002] With the rapid development of Internet technology, wireless communication plays an increasingly important role in modern society. Traditional wireless communication technology has made great progress, but there are still some limitations in achieving high-speed, low-latency and large-bandwidth communication. In order to meet the needs of 5G communication technology, C-band 5G chip technology has made significant progress and gradually entered large-scale commercial use. Although the C-band has good coverage performance, the data capacity and transmission rate are still subject to certain constraints due to limited bandwidth. In this context, millimeter wave communication has attracted attention due to its large bandwidth, low latency and high speed, and has become a key technology for achieving high-speed communication. However, millimeter wave communication faces huge challenges such as large transmission attenuation and limited coverage distance. In order to overcome the problems of millimeter wave, phased array systems have emerged, which can achieve precise phase control and beamforming, reduce interference and improve signal-to-noise ratio, thereby optimizing communication quality. Currently, the C-band radio frequency front-end system and the millimeter wave phased array system for 5G communication are working independently, which limits the flexible deployment of two communication frequency band transceiver resources, and the function is limited and the integration level is low. Therefore, how to realize the efficient cooperation of C-band and millimeter wave is the biggest challenge for 5G practicalization.

[0003] Traditional phased array systems are usually composed of multiple radio frequency channels, each channel including amplifiers, phase shifters, attenuators, and input / output switches. However, traditional systems have some limitations, such as variable gain modules and amplifier modules are usually designed separately, and lack of integrated calibration channels and frequency sources, etc. These factors limit the integration level, overall performance and flexibility of the system. In contrast, by fusing and multiplexing the independent components of the system, a higher level of integration is achieved. This design method not only reduces the cost and power consumption of the system, but also improves the performance and stability of the system, and can better adapt to different communication needs and application scenarios, reducing costs.

[0004] In general, the existing technical solutions still have the following problems: 1) the integration degree of the phased array system is insufficient. The traditional phased array system lacks full-function integration of calibration channels, frequency sources and mixers. The inconsistency of amplitude and phase characteristics between channels of the phased array system has a great influence on the gain and sidelobe level of the phased array antenna, deteriorates the communication quality, and limits the automatic adjustment and optimization capability of the system. 2) The resource reuse of the radio frequency front-end system architecture is insufficient, and the functions are independent. In the existing technology, the 5G millimeter wave phased array system and the C-band system are designed and operated independently, lacking effective circuit reuse and function integration. The integration degree is low, the function is single, and the dual-frequency fusion design is complex. This limits the overall performance of the system, increases the architecture cost, and limits the commercial application of the system. SUMMARY

[0005] To at least partially solve one of the technical problems existing in the prior art, the purpose of the present application is to provide a dual-frequency fusion multiplexed frequency source, chip, radio frequency transceiver, system and device.

[0006] The first technical solution adopted by the present application is:

[0007] A dual-frequency fusion multiplexed frequency source, comprising a phase-locked loop, a first frequency multiplier, a second frequency multiplier, a frequency divider, a first single-pole double-throw switch and a second single-pole double-throw switch;

[0008] The signal output end of the phase-locked loop is connected with the first active end of the first single-pole double-throw switch, and the input end of the first frequency multiplier, the fixed end of the first single-pole double-throw switch is connected with the input end of the second frequency multiplier, and the output end of the first frequency multiplier and the output end of the second frequency multiplier respectively output millimeter wave local oscillator signals;

[0009] The phase-locked loop is connected in series with the frequency divider; the output end of the frequency divider is connected with the first active end of the second single-pole double-throw switch, and the fixed end of the second single-pole double-throw switch outputs a C-band local oscillator signal;

[0010] The phase-locked loop, the first frequency multiplier, the second frequency multiplier and the first single-pole double-throw switch constitute a millimeter wave frequency source; the phase-locked loop is connected in series with the frequency divider and the second single-pole double-throw switch to form a C-band frequency source, so as to realize the functions of outputting millimeter wave local oscillator signals and C-band dual-frequency local oscillator signals.

[0011] Further, the working frequency of the phase-locked loop is between the C-band and the millimeter wave band;

[0012] The second active end of the first single-pole double-throw switch is connected with an external millimeter wave signal source, and the switching of the input of the external millimeter wave signal source is realized through the first single-pole double-throw switch;

[0013] The second movable end of the second single-pole double-throw switch is connected with an external C-band signal source, and the switching of the phase-locked loop and the external C-band signal source is realized through the second single-pole double-throw switch.

[0014] The second technical solution adopted in the application is:

[0015] A full-function millimeter wave CMOS 4+1 phased array chip, comprising:

[0016] A millimeter wave mixer, including a millimeter wave up-mixer and a millimeter wave down-mixer; each mixer contains three ports of a radio frequency end, an intermediate frequency end and a local oscillator end;

[0017] A combiner, the output end of which is connected with the radio frequency end of the millimeter wave down-mixer;

[0018] A splitter, the input end of which is connected with the radio frequency end of the millimeter wave up-mixer;

[0019] A phased array front end, including a plurality of first-type radio frequency channels; the first-type radio frequency channels include receiving channels and transmitting channels, and each channel contains an antenna end and a common end; the common end of the receiving channel is connected to the combining end of the combiner, and the common end of the transmitting channel is connected to the splitting end of the splitter;

[0020] A calibration channel, including a second-type radio frequency channel, a calibration single-pole double-throw switch, a calibration antenna end, a calibration signal end and a calibration local oscillator end; the calibration antenna end is coupled to the antenna end of the first-type radio frequency channel;

[0021] A dual-frequency fusion multiplexing frequency source as described above, the output end of the first frequency multiplier is connected with the calibration local oscillator end, and the output end of the second frequency multiplier is connected with the local oscillator end of the millimeter wave mixer.

[0022] Further, the antenna end of the first-type radio frequency channel is used for connecting with a millimeter wave phased array antenna;

[0023] The receiving channel of the first-type radio frequency channel includes, in sequence from the antenna end to the common end, a millimeter wave variable gain low noise amplifier and a receiving phase shifter;

[0024] The transmitting channel of the first-type radio frequency channel includes, in sequence from the antenna end to the common end, a millimeter wave variable gain power amplifier and a transmitting phase shifter.

[0025] Further, the second-type radio frequency channel of the calibration channel includes a calibration receiving channel and a calibration transmitting channel;

[0026] The calibration receiving channel comprises a low noise amplifier and a calibration down mixer, and the calibration transmitting channel comprises a power amplifier and a calibration up mixer; the calibration down mixer and the calibration up mixer both comprise a radio frequency end, an intermediate frequency end and a local oscillator end, and the local oscillator end serves as a calibration signal end and the intermediate frequency end serves as a calibration signal end;

[0027] The output end of the power amplifier is connected with a first movable end of a calibration single-pole double-throw switch, the input end of the low noise amplifier is connected with a second movable end of the calibration single-pole double-throw switch, and the fixed end of the calibration single-pole double-throw switch serves as a calibration antenna end; the calibration antenna end is coupled with the antenna ends of the receiving channel and the transmitting channel of each first type radio frequency channel of the phased array front end to realize amplitude and phase calibration among multiple channels; the calibration signal end inputs / output calibration signals through a balun.

[0028] Further, the output end of the first frequency multiplier of the millimeter wave frequency source is connected with the local oscillator ends of the calibration up mixer and the calibration down mixer; the output end of the second frequency multiplier of the millimeter wave frequency source is connected with the local oscillator end of the millimeter wave down mixer and simultaneously input to a quadrature signal generator to generate multiple paths of quadrature local oscillator signals, which are connected with the intermediate frequency ends of the millimeter wave up mixer.

[0029] The intermediate frequency signals are connected with the intermediate frequency ends of the millimeter wave up mixer through the multiple paths of quadrature intermediate frequency signals output by the quadrature signal generator, and the millimeter wave up mixer mixes the multiple paths of quadrature local oscillator signals with the multiple paths of quadrature intermediate frequency signals to output upper sideband millimeter wave signals to suppress lower sideband image interference signals.

[0030] Further, the phased array front end is used for receiving / transmitting millimeter wave signals and controlling the amplitude and phase of the millimeter wave signals; the phased array front end comprises four radio frequency channels, any one of which comprises a receiving channel and a transmitting channel and is connected with a millimeter wave phased array antenna respectively; the receiving channel comprises a millimeter wave variable gain low noise amplifier and a receiving phase shifter, which are used for amplifying received signals to reduce noise and simultaneously have the functions of adjusting the amplitude and phase of the received signals; the transmitting channel comprises a millimeter wave variable gain power amplifier and a transmitting phase shifter, which are used for enhancing the power of signals to improve the transmitting power so as to effectively transmit to a target and simultaneously have the functions of adjusting the amplitude and phase of the transmitted signals.

[0031] The calibration channel is used for calibrating the amplitude and phase of each receiving / transmitting channel in the phased array front end to make the amplitude and phase of each receiving / transmitting channel highly consistent and improve the system performance and signal quality.

[0032] The millimeter wave frequency source is used for providing millimeter wave local oscillator signals.

[0033] A mixer is configured to mix a received / transmitted signal with the millimeter wave local oscillator signal to obtain a mixed signal.

[0034] Further, the receiving channels of the four radio frequency channels are output to a millimeter wave down-mixer through a combiner, and the millimeter wave up-mixed output signal is input to a splitter, and four signals output by the splitter are respectively connected to the transmitting channels of the four radio frequency channels.

[0035] Further, the calibration channel comprises a calibration low noise amplifier, a calibration power amplifier, a calibration down-mixer and a calibration up-mixer.

[0036] The input end of the calibration low noise amplifier and the output end of the calibration power amplifier are connected through a calibration single-pole double-throw switch, the calibration single-pole double-throw switch has a switching selection function of the calibration receiving channel and the transmitting channel, and the fixed end of the calibration single-pole double-throw switch is coupled with the input end of each receiving channel and the output end of each transmitting channel in the four channels of the phased array front end, so as to realize amplitude and phase calibration between the four channels.

[0037] Further, the millimeter wave frequency source is composed of a phase-locked loop, a first frequency multiplier, a second frequency multiplier and a first single-pole double-throw switch, the first single-pole double-throw switch is used to select and switch the use of the internal frequency source and the external frequency source, the millimeter wave frequency source provides a calibration local oscillator signal for the calibration up-mixer and the calibration down-mixer through the first frequency multiplier, the millimeter wave frequency source provides a local oscillator signal for the millimeter wave down-mixer through the second frequency multiplier, the local oscillator signal generates four quadrature local oscillator signals through a quadrature signal generator to provide quadrature local oscillator signals for the millimeter wave up-mixer.

[0038] Further, the intermediate frequency signal outputs four quadrature intermediate frequency signals through the quadrature signal generator and the quadrature local oscillator signals, and the millimeter wave up-mixer mixes the signals to output an upper sideband millimeter wave signal and suppress a lower sideband mirror interference signal.

[0039] Further, the full-function millimeter wave CMOS 4+1 phased array chip can expand the number of channels, such as 8 channels, 16 channels or 32 channels.

[0040] The third technical solution adopted in the application is:

[0041] A C-band / intermediate frequency transceiver multiplexing chip comprises:

[0042] The C-band / intermediate frequency transceiver channel comprises a C-band / intermediate frequency receiving channel and a C-band / intermediate frequency transmitting channel.

[0043] The transceiver single-pole double-throw switch comprises a receiving single-pole double-throw switch and a transmitting single-pole double-throw switch.

[0044] A frequency source with dual-frequency fusion and multiplexing as described above has its C-band frequency source output terminal, i.e., the fixed terminal of the second single-pole double-throw switch, connected to the local oscillator terminal of the C-band / intermediate frequency transceiver channel.

[0045] The intermediate frequency (IF) end of the C-band / IF transceiver channel is connected to the fixed end of the transceiver single-pole double-throw switch;

[0046] By controlling the connection between the fixed and movable terminals of the transceiver single-pole double-throw switch, the C-band / IF transceiver multiplexing chip can be reused to enable the selection and switching of different signal paths.

[0047] Furthermore, the C-band / IF receiving channel includes a C-band / IF variable gain low-noise amplifier and a C-band / IF downmixer connected in series; the C-band / IF transmitting channel includes a C-band / IF upmixer and a C-band / IF variable gain power amplifier connected in series.

[0048] The C-band / IF variable gain low-noise amplifier is connected to the fixed terminal of the receiving single-pole double-throw switch, and the C-band / IF variable gain power amplifier is connected to the fixed terminal of the transmitting single-pole double-throw switch.

[0049] By controlling the connection between the fixed and movable terminals of the transceiver single-pole double-throw switch, the C-band / IF transceiver multiplexing chip can be reused to enable the selection and switching of different signal paths.

[0050] The fourth technical solution adopted in this application is:

[0051] A dual-band fused radio frequency transceiver, comprising:

[0052] A fully functional millimeter-wave CMOS 4+1 phased array chip as described above;

[0053] A C-band / IF transceiver multiplexer chip as described above is referred to as the first C-band / IF transceiver multiplexer chip;

[0054] A C-band front-end, including a power amplifier and a low-noise amplifier, is called the first C-band front-end;

[0055] The intermediate frequency (IF) terminal of the full-function millimeter-wave CMOS 4+1 phased array chip is connected to the first active terminal of the transceiver single-pole double-throw switch of the first C-band / IF transceiver multiplexer chip, and the signal terminal of the first C-band front end is connected to the second active terminal of the transceiver single-pole double-throw switch of the first C-band / IF transceiver multiplexer chip.

[0056] By controlling the connection between the fixed and movable terminals of the transceiver single-pole double-throw switch of the first C-band / IF transceiver multiplexer chip, the switching between the IF signal path and the C-band signal path can be achieved.

[0057] Further, the fixed end of the transceiving single-pole double-throw switch of the first C-band / middle frequency transceiving multiplexing chip is connected with the first movable end, the first movable end is connected with the middle frequency end of the full-function millimeter wave CMOS 4+1 phased array chip in series with the balun, the connection of the first C-band / middle frequency transceiving multiplexing chip and the full-function millimeter wave CMOS 4+1 phased array chip is realized, the first C-band front end is disconnected, and thus a millimeter wave phased array transceiver is formed.

[0058] The fixed end of the transceiving single-pole double-throw switch of the first C-band / middle frequency transceiving multiplexing chip is connected with the second movable end, the first C-band / middle frequency transceiving multiplexing chip is connected with the first C-band front end, and the full-function millimeter wave CMOS 4+1 phased array chip is disconnected, so as to realize the first C-band transceiver.

[0059] The fifth technical solution adopted in the application is:

[0060] A full-function dual-frequency fusion radio frequency transceiver system comprises:

[0061] a dual-frequency fusion radio frequency transceiver as described above;

[0062] a C-band / middle frequency transceiving multiplexing chip as described above, referred to as a second C-band / middle frequency transceiving multiplexing chip;

[0063] a C-band front end comprising a power amplifier and a low-noise amplifier, referred to as a second C-band front end;

[0064] a full-digital control logic circuit;

[0065] the signal end of the second C-band front end is connected with one movable end of the transceiving single-pole double-throw switch of the second C-band / middle frequency transceiving multiplexing chip, and the other movable end is left hanging, so as to realize the second C-band transceiver.

[0066] The full-function dual-frequency fusion radio frequency transceiver system has three working modes: a millimeter wave phased array transceiver and a C-band transceiver fusion concurrent working mode; a C-band / middle frequency transceiving multiplexing chip supporting a full-function millimeter wave CMOS 4+1 phased array chip independent working mode; and a multiplexed C-band / middle frequency transceiving multiplexing chip realizing a two-C-band transceiver cooperative working mode.

[0067] Further, a control instruction is sent by the full-digital control logic circuit to control the connection relationship between the fixed end and the movable end of the transceiving single-pole double-throw switch of the first C-band / middle frequency transceiving multiplexing chip, that is, the connection relationship between the first C-band / middle frequency transceiving multiplexing chip and the full-function millimeter wave CMOS 4+1 phased array chip and the first C-band front end, so as to realize the working switching of the millimeter wave transceiver and the first C-band transceiver.

[0068] Further, for the millimeter wave phased array transceiver and C-band transceiver fusion concurrent working mode, the all-digital control logic circuit provides control instructions to the transceiving single-pole double-throw switch of the first C-band / intermediate frequency transceiving multiplexing chip, so that the fixed end is connected with the first movable end, controls the double-frequency fusion radio frequency transceiver and the second C-band transceiver to work at the same time, and controls the first C-band front end to stop working, and finally realizes the millimeter wave phased array transceiver and C-band transceiver fusion concurrent working mode.

[0069] Further, for the C-band / intermediate frequency transceiving multiplexing chip supporting the independent working mode of the full-function millimeter wave CMOS 4+1 phased array chip, the all-digital control logic circuit provides control instructions to the second C-band transceiver to stop the C-band transceiver from working, and at the same time provides control instructions to the transceiving single-pole double-throw switch of the first C-band / intermediate frequency transceiving multiplexing chip, so that the fixed end is connected with the first movable end, to realize that the first C-band / intermediate frequency transceiving multiplexing chip supports the independent working mode of the millimeter wave phased array transceiver as an intermediate frequency module.

[0070] Further, for the multiplexing C-band / intermediate frequency transceiving multiplexing chip to realize the working mode of two C-band transceivers cooperating, the all-digital control logic circuit provides control instructions to the full-function millimeter wave CMOS 4+1 phased array chip to stop the full-function millimeter wave CMOS 4+1 phased array chip from working, and at the same time controls the first C-band transceiver and the second C-band transceiver to work together to constitute an independent working mode of a two-input / two-output C-band transceiver, so as to realize the multiplication of the transmission rate.

[0071] Further, the full-function double-frequency fusion radio frequency transceiving system further comprises an ESD protection circuit, which is electrically connected with the full-function millimeter wave CMOS 4+1 phased array chip, the C-band front end and the C-band / intermediate frequency transceiving multiplexing chip, and is used for preventing or reducing the damage of electrostatic discharge to electronic equipment and circuit.

[0072] Further, the millimeter wave phased array transceiver and the C-band transceiver in the full-function double-frequency fusion radio frequency transceiving system can be expanded to constitute more data stream transmission communication equipment.

[0073] The sixth technical solution adopted in the application is:

[0074] A communication device comprises a double-frequency fusion multiplexed frequency source as described above, or comprises a full-function millimeter wave CMOS 4+1 phased array chip as described above, or comprises a C-band / intermediate frequency transceiving multiplexing chip as described above, or comprises a double-frequency fusion radio frequency transceiver as described above, or comprises a full-function double-frequency fusion radio frequency transceiving system architecture and multiple working modes thereof as described above.

[0075] Compared with the prior art, the beneficial effects of the present application include:

[0076] (1) The present application introduces a dual-frequency fusion frequency synthesis technology, which solves the problem of large frequency difference output of millimeter wave and C-band through frequency multiplication and frequency division circuit. The fusion and output of a reliable dual-frequency local oscillator signal source supporting a large frequency difference of millimeter wave (18-27 GHz) and C-band (2-3 GHz) are realized. The frequency source core component phase-locked loop has a wide frequency range of 6-9 GHz, a phase noise of <-117 dBc / Hz@1 MHz, and a jitter of 400-500 fs;

[0077] (2) The present application proposes a full-function millimeter wave CMOS 4+1 phased array chip, which integrates a calibration channel, a millimeter wave frequency source, has a large bandwidth characteristic, and is compatible with C-band fusion communication. It solves the problem of inconsistent amplitude and phase characteristics of each channel in the traditional phased array system due to the lack of calibration channels, and overcomes the technical difficulties of integrating a dual-frequency fusion frequency source circuit, thereby significantly improving the communication quality. The working bandwidth of the full-function millimeter wave CMOS 4+1 phased array chip can cover 24.25-29.5 GHz, covering multiple frequency bands of 5G millimeter wave communication, including n258 (24.25-27.5 GHz), n257 (26.5-29.5 GHz), n261 (27.5-28.35 GHz), and the error vector magnitude (EVM) under the condition of 64QAM and 600MHz symbol rate is <7%. In addition, the chip has high-performance and high-precision phase-shifting performance, which can effectively improve the sidelobe suppression capability of the phased array and thus improve the system performance. The phase shifter has a phase-shifting accuracy of 5.625°, a phase-shifting range of 360°, an RMS phase error of less than 3.5°, and an RMS gain error of less than 1dB;

[0078] (4) The present application fuses the transceivers of C-band and millimeter wave two frequency bands, supports multiple working modes, has both the long-distance transmission capability of C-band communication system and the advantages of large bandwidth, low latency and high speed of millimeter wave communication. It solves the problems of insufficient resource reuse and independent function of the radio frequency front-end system architecture. It supports the optimal dual-frequency joint communication mode, and the system can realize flexible deployment under different working modes, thereby improving the efficiency and performance of dual-frequency joint communication. Among them, the C-band / intermediate frequency transceiver multiplexing chip has a bandwidth of 3.3-3.85 GHz, covering the n78 (3.3-3.6 GHz) frequency band of 5G mobile communication, a noise figure of 6.3 dB, and a transceiver variable gain range of 10 dBm and 32 dB.

[0079] (5)The dual-frequency fusion transceiver system and the communication device have high integration and strong expandability. The full-function millimeter wave CMOS 4+1 phased array chip is not limited to 4 channels, but can be further expanded to more channels. For the C-band transceiver, the number of channels can also be expanded to realize more data stream transmission and higher communication rate.

[0080] These technical features and advantages make the application have important application and commercial value in the field of millimeter wave and C-band communication, and bring innovation and breakthrough to the development of communication devices. BRIEF DESCRIPTION OF DRAWINGS

[0081] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the following introduces the drawings of the related technical solutions in the embodiments of the application or the prior art. It should be understood that the drawings in the following introduction are only for the convenience of clearly describing some embodiments of the technical solutions of the application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.

[0082] Fig. 1 is a system block diagram of a full-function dual-frequency fusion radio frequency transceiver system and communication device in the embodiment of the application;

[0083] Fig. 2 is a circuit diagram of a millimeter wave CMOS 4+1 phased array chip in the embodiment of the application;

[0084] Fig. 3 is a circuit diagram of a C-band / intermediate frequency transceiver multiplexing chip in the embodiment of the application;

[0085] Fig. 4 is a C-band front-end circuit diagram in the embodiment of the application;

[0086] Fig. 5 is a schematic diagram of the fusion and concurrent working mode of the C-band transceiver and the millimeter wave phased array transceiver in the embodiment of the application;

[0087] Fig. 6 is a schematic diagram of the C-band / intermediate frequency transceiver multiplexing chip supporting the independent working mode of the full-function millimeter wave CMOS 4+1 phased array chip in the embodiment of the application;

[0088] Fig. 7 is a schematic diagram of the working mode of the multiplexed C-band / intermediate frequency transceiver multiplexing chip realizing the cooperation of two C-band transceivers in the embodiment of the application.

[0089] Fig. 8 is a system block diagram of a full-function dual-frequency fusion radio frequency transceiver system and communication device in the embodiment 2 of the application;

[0090] Fig. 9 is a system block diagram of a full-function dual-frequency fusion radio frequency transceiver system and communication device in the embodiment 3 of the application;

[0091] Fig. 10 is a system block diagram of a full-function dual-frequency fusion radio frequency transceiver system and communication device in the embodiment 4 of the application. DETAILED DESCRIPTION

[0092] The embodiments of the present application are described below in detail with reference to the accompanying drawings, wherein the same or similar components or components having the same or similar functions are denoted by the same or similar reference numerals throughout the drawings. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as a limitation on the present application. For the step numbers in the following embodiments, they are only set for the convenience of explaining the description, and the order between the steps is not limited in any way, and the execution order of each step in the embodiments can be adaptively adjusted according to the understanding of those skilled in the art.

[0093] In the description of the present application, it should be understood that the orientation description, such as the orientation or position relationship indicated by up, down, front, back, left, right, etc. is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and is not intended to indicate or imply that the device or component referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0094] In the description of the present application, several means one or more, and multiple means two or more, greater than, less than, more than, etc. are understood as not including the number, above, below, etc. are understood as including the number. If it is described that the first, the second is only used for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features or the order of indicated technical features. In addition, "and / or" describes the association relationship of the associated objects, which means that there can be three kinds of relationships, for example, A and / or B can represent: A alone, A and B exist at the same time, and B alone. The character " / " generally represents that the front and rear associated objects have an "or" relationship.

[0095] In the description of the present application, unless otherwise explicitly limited, the words such as setting, installing, connecting, etc. should be broadly understood, and those skilled in the art can reasonably determine the specific meaning of the above words in the present application in combination with the specific content of the technical solution.

[0096] In view of the existing technical problems, the present embodiment proposes a full-function dual-frequency fusion radio frequency transceiver system and communication equipment architecture, which includes a full-function millimeter wave CMOS 4+1 phased array chip with highly integrated frequency source and calibration channel, a C-band / intermediate frequency transceiver multiplexing chip, and a C-band radio frequency front end, aiming to solve the problem of insufficient integration of phased array system. The traditional phased array system lacks full-function integration of calibration channel, frequency source and mixer, and the resource multiplexing of radio frequency front end system architecture is insufficient, and a series of problems such as independent functions. The full-function dual-frequency fusion radio frequency transceiver system and communication equipment are described in detail below with reference to the accompanying drawings.

[0097] Embodiment 1:

[0098] (1) Circuit structure description

[0099] As shown in FIG. 1, the present embodiment provides a full-function dual-frequency fusion radio frequency transceiver system, mainly including a millimeter wave CMOS 4+1 phased array chip, a C-band / intermediate frequency transceiver multiplexing chip and a C-band front end.

[0100] The millimeter wave CMOS 4+1 phased array chip integrates four millimeter wave receiving channels (including a millimeter wave variable gain low noise amplifier 101, a millimeter wave receiving phase shifter 102), four millimeter wave transmitting channels (including a millimeter wave variable gain power amplifier 103, a millimeter wave transmitting phase shifter 104), a combiner 105, a power divider 106, a millimeter wave down-mixer 107, a millimeter wave quadrature up-mixer 108, quadrature signal generators 109 and 110, a transceiver calibration channel, a millimeter wave frequency source composed of a phase-locked loop 119, a first frequency multiplier 118 and a second frequency multiplier 121, a full-digital control unit and an ESD protection circuit, as shown in FIG. 2.

[0101] The C-band / intermediate frequency transceiver multiplexing chip mainly includes a receiving single-pole double-throw switch 122(1), a transmitting single-pole double-throw switch 122(2), a second single-pole double-throw switch 127, a C-band / intermediate frequency variable low noise amplifier 123, a C-band / intermediate frequency variable gain power amplifier 125, a C-band / intermediate frequency down-mixer 124, a C-band / intermediate frequency up-mixer 126 and a C-band frequency source composed of a phase-locked loop 119 and a frequency divider 128, as shown in FIG. 3.

[0102] The C-band front end mainly includes a C-band power amplifier 129, a C-band low noise amplifier 130 and a C-band front end switch 131, as shown in FIG. 4.

[0103] The specific circuit structure is connected as follows: the millimeter wave variable gain low noise amplifier 101 in each millimeter wave receiving channel receives the input end connected with the millimeter wave phased array antenna end to receive the millimeter wave frequency signal RF1, and the millimeter wave variable gain low noise amplifier 101 receives the output end connected with the receiving phase shifter 102 input end. The receiving phase shifter 102 output end of the four receiving channels is respectively connected to the corresponding combining end port of the combiner 105. The output end of the combiner 105 is connected with the signal input end of the millimeter wave down-converter 107, the local oscillator input end of the millimeter wave down-converter 107 is connected with the output end LO1 of the second frequency multiplier 121 in the millimeter wave frequency source, and the output end of the millimeter wave down-converter 107 outputs the first intermediate frequency C-band signal IF1. Each millimeter wave transmitting channel first inputs the first intermediate frequency C-band signal IF1 into the intermediate frequency quadrature signal generator 109 input end, and the intermediate frequency quadrature signal generator 109 output end is connected with the signal input end of the millimeter wave quadrature up-converter 108. The local oscillator input end of the millimeter wave quadrature up-converter 108 is connected with the output end of the quadrature signal generator 110.

[0104] The input end of the quadrature signal generator 110 is connected with the output end LO1 of the second frequency multiplier 121 in the millimeter wave frequency source. The output end of the quadrature mixer 109 is connected with the input end of the power divider 106. The transmitting phase shifter 104 of the four radio frequency transmitting channels is respectively connected to the corresponding branch port of the power divider. The transmitting phase shifter 104 of the radio frequency transmitting channel is connected with the input end of the power amplifier 103 of the transmitting channel. The high power amplifier 103 transmitting output port in each millimeter wave receiving channel is connected with the millimeter wave phased array antenna to transmit the millimeter wave frequency signal RF1.

[0105] The millimeter wave frequency source is composed of a phase-locked loop 119, a first frequency multiplier 118, a second frequency multiplier 121 and a first single-pole double-throw switch 120. The input end of the phase-locked loop 119 is connected with a reference clock signal, and the output ends are respectively connected with port 1 of the first single-pole double-throw switch 120 and the input end of the first frequency multiplier 118. The calibration local oscillator signal LO 1C of the first frequency multiplier 118 output end is connected with the local oscillator end of the calibration channel up-conversion 116 and down-conversion 115. Port 2 of the first single-pole double-throw switch 120 is connected with the millimeter wave off-chip frequency source, and port 3 of the first single-pole double-throw switch 120 is connected with the input end of the second frequency multiplier 121.

[0106] The calibration channel is composed of a calibration variable gain low noise amplifier 113, a calibration variable gain power amplifier 114, a calibration down-converter 115, a calibration up-converter 116 and an antenna end calibration single-pole double-throw switch 117. For the transmitting channel of the calibration channel, the input calibration signal is input to the calibration up-converter 116, the local oscillator end of the calibration up-converter 116 is connected with the calibration local oscillator signal LO 1CThe calibration upmixer output 116 is connected to the input of the calibration variable gain power amplifier 114, and the output of the calibration power amplifier is connected to port 1 of the calibration single-pole double-throw switch 117. For the receiving channel of the calibration channel, the input of the calibration variable gain low-noise amplifier 113 is connected to port 2 of the calibration single-pole double-throw switch 117, and the output of the calibration variable gain low-noise amplifier 113 is connected to the input of the calibration downmixer 115. The output of the calibration downmixer 115 outputs the calibration signal. The calibration channel is coupled to the outputs of the power amplifiers 103 of the four transmitting channels and the inputs of the millimeter-wave variable gain low-noise amplifiers 101 of the four receiving channels at port 3 of the calibration single-pole double-throw switch 117.

[0107] The differential first intermediate frequency signal IF1 output by the millimeter-wave downmixer 107 of the millimeter-wave CMOS 4+1 phased array chip is connected to the differential input terminal of the balun 112 for the receiving path of the C-band / IF transceiver multiplexing chip (1). The single-ended output terminal of the balun 112 is connected to port 1 of the single-pole double-throw switch 122 (1) in the C-band / IF transceiver multiplexing chip (1). Port 2 of the single-pole double-throw switch 122 (1) in the C-band / IF transceiver multiplexing chip (1) is connected to the output terminal of the C-band low-noise amplifier 130 of the C-band front-end (1). Port 3 of the receiving single-pole double-throw switch 122 (1) of the C-band / IF transceiver multiplexing chip (1) is connected to the input terminal of the C-band / IF variable low-noise amplifier 123 of the C-band / IF transceiver multiplexing chip (1). The output of the C-band / IF variable low-noise amplifier 123 is connected to the input of the C-band / IF downmixer 124. The local oscillator of the C-band / IF downmixer 124 is connected to port 3 of the second single-pole double-throw switch 127, ultimately converting the first IF signal IF1 to the second IF signal IF2.

[0108] For the transmit path of the C-band / IF transceiver multiplexer chip (1), the second IF signal IF2 is connected to the input terminal of the C-band / IF upmixer 126. The local oscillator terminal of the C-band / IF upmixer 126 is connected to port 3 of the second single-pole double-throw switch 127. Ports 1 and 2 of the second single-pole double-throw switch are respectively connected to the internal frequency source LO. Cand an external frequency source LO2. The output of the C-band / IF up-mixer 126 is connected to the input of the C-band / IF variable gain power amplifier 125, and the output of the C-band / IF variable gain power amplifier 125 is connected to port 3 of the transmit SPDT switch 122(2) of the C-band / IF transceiver multiplexing chip (1). Port 1 of the SPDT switch 122(2) in the C-band / IF transceiver multiplexing chip (1) is connected to the single-ended input of the balun 111, and the differential output of the balun 111 outputs the differential first IF signal IF1, which is connected to the input of the quadrature signal generator 109. Port 2 of the SPDT switch 122(2) in the C-band / IF transceiver multiplexing chip (1) is connected to the input of the C-band power amplifier 129 of the C-band front-end (1). Port 1 of the C-band front-end switch 131 of the C-band front-end (1) is connected to the input of the C-band low noise amplifier 130, and port 2 of the C-band front-end switch 131 of the C-band front-end (1) is connected to the output of the C-band power amplifier 129. Port 3 of the C-band front-end switch 131 is connected to the C-band antenna to transmit or receive the C-band RF signal RF2. The local oscillator input of the C-band / IF down-mixer 124 and the up-mixer 126 in the C-band / IF transceiver multiplexing chip (1) are connected, and port 2 of the SPDT switch 122(1) and port 2 of the SPDT switch 122(2) of the C-band / IF transceiver multiplexing chip (2) are respectively connected to the output port of the C-band low noise amplifier 130 and the input of the C-band power amplifier 129 of the C-band front-end (2), and port 1 of the SPDT switch 122(1) and port 1 of the SPDT switch 122(2) of the C-band / IF transceiver multiplexing chip (2) are left unconnected. The circuit connection structure of the C-band front-end (2) is the same as that of the C-band front-end (1). The C-band / IF transceiver multiplexing chip (2) is connected internally with the C-band / IF transceiver multiplexing chip (1) in the same way.

[0109] (2) Explanation of the working principle of the circuit

[0110] The working principle of the circuit is mainly explained in the following three parts: the working principle of the millimeter wave CMOS 4+1 phased array chip; the working principle of the C-band / IF transceiver multiplexing chip and the C-band RF front-end; and the working principle of the dual-frequency fusion RF transceiver system.

[0111] 1) Working principle of the millimeter wave CMOS 4+1 phased array chip

[0112] The structure of the millimeter wave CMOS 4+1 phased array chip is shown in Figure 2. The chip is a full-featured transceiver chip with built-in calibration channels and internal frequency sources, designed specifically for transmitting and receiving millimeter wave frequency wireless signals. By integrating the calibration channel, the amplitude and phase calibration of the millimeter wave phased array front end is realized, thereby improving the system performance and signal quality. At the same time, the integration of the internal frequency source provides a stable local oscillator signal for the chip, further enhancing its application reliability in the field of millimeter wave communication. The millimeter wave CMOS 4+1 phased array chip can control the amplitude and phase of each channel to control the amplitude and phase of each antenna element, and realize dynamic control of the beam shape of the transmitted or received signal. For the receiver, receive channel 1~receive channel 4 receive millimeter wave frequency RF1 signal through the phased array antenna, and through the low noise amplifier 101 of the receive channel to realize noise suppression and cancellation, signal amplification and noise suppression, and at the same time realize the gain change and control of the receive channel, then through the broadband millimeter wave receive phase shifter 102 to realize 360° high precision phase control. The signals received by the four receive channels are combined by the combiner 105, and finally the millimeter wave frequency signal RF1 is mixed with the local oscillator signal LO1 by the millimeter wave down-converter 107 to realize the frequency conversion of the millimeter wave frequency signal RF1 to the first intermediate frequency IF1 signal, and the local oscillator signal LO1 of the millimeter wave down-converter 107 is provided by the millimeter wave frequency source. For the transmitter, the millimeter wave CMOS 4+1 phased array chip can receive the first intermediate frequency IF1 signal, and the input signal generates four quadrature intermediate frequency signals as the quadrature intermediate frequency input signal of the millimeter wave quadrature up-converter 108 through the quadrature signal generator 109. The local oscillator signal LO1 output by the millimeter wave frequency source generates four quadrature local oscillator signals LO1 as the quadrature local oscillator input signal of the millimeter wave quadrature up-converter 108 through the quadrature signal generator 110. The millimeter wave quadrature up-converter 108 mixes the quadrature intermediate frequency input signal and the quadrature local oscillator signal LO1 to output the millimeter wave frequency signal, and then through the splitter to realize four balanced power output signals input into four transmit channels. The input signals of transmit channel 1~transmit channel 4 first pass through the broadband millimeter wave transmit phase shifter 104 to realize 360° high precision phase control. Then through the millimeter wave variable gain power amplifier 103 to realize high quality and high power amplification of the signal. Finally, the millimeter wave phased array antenna transmits the millimeter wave frequency signal RF1.

[0113] The calibration channel of the millimeter wave CMOS 4+1 phased array chip is a simple transceiver, and its main function is to calibrate the amplitude and phase of each transceiver channel in the phased array system, so as to make the amplitude and phase of each transceiver channel highly consistent. The 3 ports of the calibration single-pole double-throw switch 117 are respectively coupled with the input end of the low-noise amplifier 101 of the four receiving channels and the output end of the power amplifier 103 of the transmitting channel, so as to realize the connection of the calibration channel and the phased array transceiver path and monitor the phased array system. The working principle is as follows:

[0114] Receiving calibration: first, take receiving channel 1 as the reference, pass the calibration signal through the calibration up-mixer 116 and the calibration local oscillator signal LO 1C provided by the millimeter wave frequency source to mix, generate a reference signal with the same frequency as the millimeter wave frequency RF1 signal. Then, the signal power is amplified through the calibration variable gain power amplifier 114, and port 1 of the calibration single-pole double-throw switch 117 is connected with port 3 of the calibration single-pole double-throw switch 117. At this time, the calibration channel receiving path does not work. The port 3 of the calibration single-pole double-throw switch 117 transmits the signal coupled to the receiving channel 1, and the reference amplitude and phase signal is obtained through the receiving channel 1. Then, the relative phase and amplitude of each receiving channel and the reference channel are detected in turn. Finally, the calibration parameters of the amplitude and phase of each receiving channel are obtained, and the amplitude and phase of each receiving channel are adjusted through the control of the all-digital control logic circuit, so as to realize the internal calibration of receiving channel 1~receiving channel 4.

[0115] Transmitting calibration: first, take transmitting channel 1 as the reference, couple the transmitting signal of the transmitting channel 1 through the output end of the millimeter wave variable gain power amplifier 103 in the transmitting channel 1 to the port 3 of the calibration single-pole double-throw switch 117, and connect the received signal with port 2 of the calibration single-pole double-throw switch 117 through switch control, that is, input to the receiving path in the calibration channel, and the transmitting path does not work. Through the calibration variable gain low-noise amplifier 113, the noise figure is reduced, the signal is amplified and the gain is adjusted. Subsequently, the millimeter wave frequency RF1 signal is mixed with the calibration local oscillator signal LO 1CThe mixing is performed to generate a reference signal with the same frequency as the first intermediate frequency signal. Then, the relative phase and amplitude of each of the remaining transmission channels and the reference channel are detected in turn. Finally, the calibration parameters of the amplitude and phase of each transmission channel are obtained, and the amplitude and phase of each transmission channel are adjusted through the control of the all-digital control logic circuit to realize the transmission calibration of the transmission channel 1 to the transmission channel 4. The advantage of the calibration is that the calibration is realized in the chip, the realization is simple, the design and implementation are easy, and the amplitude and phase calibration data of all system errors between each receiving and transmitting channel and the antenna unit can be provided, but the calibration data does not include the amplitude and phase inconsistency between each unit of the antenna array caused by the manufacturing tolerance, installation error and mutual coupling of the antenna unit, and the manufacturing tolerance, processing precision and installation tolerance of the antenna array must be strictly controlled, or the calibration values of the amplitude and phase are obtained through secondary calibration.

[0116] The frequency source of the millimeter wave CMOS 4+1 phased array chip mainly provides the local oscillator LO1 signal for the millimeter wave down-mixer 107, provides the quadrature local oscillator signal LO1 for the millimeter wave quadrature up-mixer 108 through the input quadrature signal generator, and provides the calibration local oscillator signal LO for the calibration down-mixer 115 and the calibration up-mixer 116 of the calibration channel. 1C The frequency source input signal is divided into two modes of internal frequency source and external frequency source output, and the internal and external frequency sources are mainly switched through the first single-pole double-throw switch 120. The internal frequency source is output by the external input reference clock after frequency locking and phase locking by the phase-locked loop 119 to generate the desired clock signal. When the switch is switched to the internal frequency source, that is, the port 1 and the port 3 of the first single-pole double-throw switch 120 are connected, the clock signal generated by the phase-locked loop 119 is used as the input signal of the first frequency multiplier 118 and the second frequency multiplier 121; when the switch is switched to the external frequency source, that is, the port 2 and the port 3 of the first single-pole double-throw switch 120 are connected, the clock signal generated by the external signal source is used as the input signal of the second frequency multiplier 121, and finally the clock signals generated by the phase-locked loop 119 and the millimeter wave off-chip frequency source input are frequency-multiplied to generate the local oscillator signals required by the millimeter wave mixer and the calibration mixer. The system flexibly selects the internal and external frequency sources in different working modes to meet the specific application requirements.

[0117] The phase control, amplitude variation, single-pole double-throw switch switching and all controls of the millimeter wave CMOS 4+1 phased array chip are controlled through the all-digital control logic circuit. The millimeter wave CMOS 4+1 phased array chip includes an ESD protection circuit, which is a circuit design for preventing or mitigating the damage of electrostatic discharge to electronic components and circuits, and improves the robustness of the circuit. Electrostatic discharge is a sudden discharge caused by unbalanced electric charge, which may cause damage to electronic components and integrated circuits. The working principle of the ESD protection circuit is mainly to guide, absorb or disperse the energy of the electrostatic discharge to protect sensitive electronic components.

[0118] 2) Working principle of C-band / IF transceiver multiplexing chip and C-band RF front-end

[0119] The structure of the C-band / IF transceiver multiplexing chip is shown in FIG. 3. The chip is a C-band and IF transceiver multiplexing chip, which can be used as a C-band transceiver alone, or multiplexed as an IF module of a millimeter wave phased array transceiver to realize the conversion between the baseband and the C-band frequency. For the receiving path of the C-band / IF transceiver multiplexing chip, the C-band front-end and the millimeter wave phased array front-end signal channel are selected and switched through a receiving single-pole double-throw switch 122(1), and the output signal is amplified and the noise is suppressed by a C-band / IF variable low noise amplifier 123, which has a gain variable function. Finally, the C-band / IF signal is converted to a baseband signal through a C-band / IF down-converter 124. For the transmitting path of the C-band / IF transceiver multiplexing chip, the C-band / IF down-converter 126 realizes the conversion of the baseband signal to the C-band / IF signal, and the input signal is power amplified through a C-band / IF variable gain power amplifier 125, which has a gain adjustment function. Finally, the C-band front-end and the millimeter wave phased array front-end signal channel are selected and switched through a transmitting single-pole double-throw switch 122(2). The C-band / IF transceiver multiplexing chip multiplexes a phase-locked loop 119, which integrates a C-band frequency source.

[0120] The output signal of the C-band frequency source is divided into two modes of internal frequency source and external frequency source output, which are mainly switched through a second single-pole double-throw switch 127. The internal frequency source outputs a clock signal generated after the reference clock input from the outside is frequency-locked and phase-locked through the phase-locked loop 119. The clock signal is divided by a frequency divider 128 to provide the required local oscillator signal (LO C ) for the C-band / IF down-converter 124 and the C-band / IF up-converter 126. When the internal frequency source is switched, i.e. port 1 and port 3 of the second single-pole double-throw switch 127 are connected, the clock signal generated by the phase-locked loop 119 becomes the input signal of the frequency divider 118. When the external frequency source is switched, i.e. port 2 and port 3 of the second single-pole double-throw switch 127 are connected, the LO C generated by the phase-locked loop 119 through the frequency divider and the input LO2 from the C-band off-chip frequency source are selected through the second single-pole double-throw switch 127 to provide the local oscillator signal for the local oscillator input end of the C-band / IF down-converter 124 and the up-converter 126. The system flexibly selects the internal and external frequency sources in different working modes to meet the specific application requirements.

[0121] The C-band RF front end is shown in FIG. 4, and its main work is to transmit and receive C-band frequency wireless signals. The high-performance C-band low-noise amplifier 130 with C-band front-end switch 131 and C-band power amplifier 129 are integrated, and connected with the C-band / intermediate frequency transceiver multiplexing chip, thereby improving the C-band communication performance and signal quality. The RF2 signal end transmits or receives signals through the C-band array antenna, and is connected with port 3 of the C-band front-end switch. The C-band front-end switch flexibly selects the transmission or reception channel of the C-band through port 3 of the C-band front-end switch. Port 1 or port 2 of the C-band front-end switch is connected with the input end of the C-band low-noise amplifier 130 and the output end of the C-band power amplifier, respectively. When port 1 and port 3 of the C-band front-end switch are connected, i.e., working in the receiving channel, the C-band low-noise amplifier 130 amplifies the received RF2 signal and suppresses the noise, and provides a high-quality C-band signal input to port 1 of the receiving single-pole double-throw switch 122(1) of the C-band / intermediate frequency transceiver multiplexing chip. When port 2 and port 3 of the C-band front-end switch are connected, i.e., working in the transmission channel, the C-band power amplifier performs power amplification on the signal output by port 1 of the transmitting single-pole double-throw switch 122(2) of the C-band / intermediate frequency transceiver multiplexing chip, and finally transmits the wireless signal through the C-band array antenna.

[0122] 3) Working principle of dual-frequency fusion RF transceiver system

[0123] 1) Millimeter wave phased array transceiver and C-band transceiver fusion and concurrent working mode; 2) C-band / intermediate frequency transceiver multiplexing chip supports full-function millimeter wave CMOS 4+1 phased array chip independent working mode; 3) Multiplexing C-band / intermediate frequency transceiver multiplexing chip realizes the working mode of two C-band transceivers cooperating.

[0124] The first working mode is shown in FIG. 5. In FIG. 5, the port 1 and the port 3 of the receiving single-pole double-throw switch 122(1) and the transmitting single-pole double-throw switch 122(2) of the C-band / middle frequency transceiver multiplexing chip (1) are connected. At this time, the C-band front end (1) is in a non-working state. The C-band / middle frequency transceiver multiplexing chip (1) serves as a middle frequency amplification and middle frequency conversion module of the millimeter wave CMOS 4+1 phased array chip, connects the millimeter wave CMOS 4+1 phased array chip with a baseband, realizes conversion between middle frequency signals and baseband signals and adjustment of signal intensity, thereby constituting a millimeter wave phased array transceiver. At the same time, the output end of the C-band low noise amplifier 130 and the input end of the C-band power amplifier 129 of the C-band front end (2) are connected with the port 2 of the receiving single-pole double-throw switch 122(1) and the transmitting single-pole double-throw switch 122(2) of the C-band / middle frequency transceiver multiplexing chip (2) respectively, to constitute a second C-band transceiver. This working mode integrates the functions of the millimeter wave phased array transceiver and the C-band transceiver. The millimeter wave phased array transceiver and the C-band transceiver respectively integrate and work in the millimeter wave frequency band and the C-band frequency band, so that the C-band can realize long-distance communication, and the millimeter wave frequency band provides a new type of cooperative working mode of large bandwidth, high rate and low time delay communication.

[0125] The second working mode is shown in FIG. 6. In this mode, the C-band / middle frequency transceiver multiplexing chip supports independent operation of a full-function millimeter wave CMOS 4+1 phased array chip. Unlike the first working mode, the second mode no longer contains a C-band transceiver, but allows the millimeter wave phased array transceiver to work independently in specific environments and situations. By turning off the C-band transceiver, the C-band / middle frequency transceiver multiplexing chip (1) acts as a multiplexing module, supporting the middle frequency amplification and middle frequency conversion module of the millimeter wave CMOS 4+1 phased array chip. The millimeter wave CMOS 4+1 phased array chip is connected with a baseband, realizing conversion between middle frequency signals and baseband signals and adjustment of signal intensity, thereby realizing processing of wireless signals. This design has high flexibility, enabling the system to select independent operation of the millimeter wave phased array transceiver as needed to meet specific environmental or application requirements. The C-band / middle frequency transceiver multiplexing chip acts as an important multiplexing module in this case, effectively supporting middle frequency processing and frequency conversion operations of the millimeter wave phased array chip.

[0126] The third working mode is shown in FIG. 7. By multiplexing the C-band / intermediate frequency transceiver multiplexing chip, the independent working mode of the two-input / two-output C-band transceiver is realized. In FIG. 7, by switching the receiving single-pole double-throw switch and the transmitting single-pole double-throw switch of the C-band / intermediate frequency transceiver multiplexing chip (1), the port 2 and the port 3 of the receiving single-pole double-throw switch 122(1) and the transmitting single-pole double-throw switch 122(2) of the C-band / intermediate frequency transceiver multiplexing chip (1) are connected, which are multiplexed as the C-band signal amplification and C-band frequency conversion module of the first C-band front end, forming the first C-band transceiver. The port 2 and the port 3 of the receiving single-pole double-throw switch 122(1) and the transmitting single-pole double-throw switch 122(2) of the C-band / intermediate frequency transceiver multiplexing chip (2) are connected, which constitute the second C-band transceiver. At the same time, the full-function millimeter wave CMOS 4+1 phased array chip is controlled to be in a stop working state. Therefore, through the cooperative work of the two C-band transceivers, the third working mode, i.e., the independent working mode of the two-input / two-output C-band transceiver, is formed.

[0127] Embodiment 2:

[0128] As shown in FIG. 8, on the basis of embodiment 1, the millimeter wave variable gain low noise amplifier 101 in the receiving channel in the millimeter wave CMOS 4+1 phased array chip is implemented by connecting a low noise amplifier 101' and a variable attenuator 101” in series to reduce the noise amplification signal and the variable gain, and the millimeter wave variable gain power amplifier 103 is implemented by connecting a power amplifier 103' and a variable attenuator 103” in series to realize the amplification of the signal power and the adjustment of the gain. The implementation scheme can realize the same functions as the full-function millimeter wave phased array chip, the transceiver system and the communication device in embodiment 1. Similarly, the C-band / intermediate frequency variable low noise amplifier 123, the C-band / intermediate frequency variable gain power amplifier 125 or the calibration variable gain low noise amplifier 113 and the calibration variable gain power amplifier 114 in embodiment 1 can also realize the same functions by connecting an amplifier and a variable attenuator in the same way.

[0129] Embodiment 3:

[0130] As shown in FIG. 9, on the basis of embodiment 1, the millimeter wave variable gain low noise amplifier 101 in the receiving channel in the millimeter wave CMOS 4+1 phased array chip and the variable gain function of the millimeter wave variable gain power amplifier 103 are respectively fused with the millimeter wave receiving phase shifter 102 and the millimeter wave transmitting phase shifter 104 to realize the design of the millimeter wave variable gain receiving phase shifter 102' and the millimeter wave variable gain transmitting phase shifter 104'. The implementation scheme can realize the same functions as the full-function millimeter wave phased array chip, the transceiver system and the communication device in embodiment 1.

[0131] Embodiment 4:

[0132] As shown in Figure 10, on the basis of Embodiment 1, the quadrature signal generator 109 in the millimeter wave CMOS 4+1 phased array chip is reversely placed at the output end of the millimeter wave quadrature up-converter 108 to realize quadrature phase shift and power synthesis, and also to realize the lower sideband suppression function. Similarly, on the basis of Embodiment 1, the quadrature signal generator 110 is placed at the output end of the millimeter wave quadrature up-converter 108 to realize the lower sideband suppression function. The implementation scheme can realize the same functions as the full-function millimeter wave phased array chip, transceiver system and communication device in Embodiment 1.

[0133] Embodiment 5:

[0134] On the basis of Embodiment 1, the frequency source for dual-frequency fusion multiplexing can adopt other implementation manners. For example, the frequency source for dual-frequency fusion multiplexing only includes a frequency multiplier, and the phase-locked loop frequency can be designed in the frequency band of the local oscillator required by the multiplexed C-band / middle frequency transceiver multiplexing chip, and the local oscillator signal required by the millimeter wave CMOS 4+1 phased array chip is realized through a suitable frequency multiplier. For another example, the frequency source for dual-frequency fusion multiplexing only includes a frequency divider, and the phase-locked loop frequency can be designed in the frequency band of the local oscillator required by the millimeter wave CMOS 4+1 phased array chip, and the local oscillator signal required by the C-band / middle frequency transceiver multiplexing chip is realized through a suitable frequency divider.

[0135] Embodiment 6:

[0136] On the basis of Embodiment 1, the calibration channel can remove the calibration variable gain low noise amplifier 113 and the calibration variable gain power amplifier 114, and only be connected with the port 2 and the port 1 of the calibration single-pole double-throw switch 117 at the antenna end through the calibration down-converter 115 and the calibration up-converter 116 respectively. The implementation scheme can realize the same functions as the full-function millimeter wave phased array chip, transceiver system and communication device in Embodiment 1.

[0137] Embodiment 7:

[0138] On the basis of Embodiment 1, the full-function millimeter wave CMOS 4+1 phased array chip is not limited to 4 channels, but can also be expanded to more channels (8 channels, 16 channels or 32 channels). For the C-band transceiver, the number of channels can also be expanded. The implementation scheme can realize a dual-frequency fusion transceiver system and communication device with more data stream transmission and higher communication rate.

[0139] In summary, the present application has at least the following advantages over the prior art:

[0140] The application discloses a novel full-function dual-frequency phased array system and communication equipment, which fuses transceivers of C-band and millimeter wave, supports multiple working modes, and realizes circuit multiplexing and multiple working modes through reasonable planning of signal frequencies and design of switches.

[0141] (1) The millimeter wave phased array chip integrates four transceiving channels, a calibration channel and an internal frequency source, has full-function characteristics of high integration, internal calibration of the chip and flexible switching of internal and external sources, and enhances the performance and applicability of the system and has strong expansibility.

[0142] (2) The frequency synthesis technology of dual-frequency fusion is introduced, the large frequency difference output problem of millimeter wave and C-band is solved through frequency multiplication and frequency division circuits, and the fusion and output of reliable dual-frequency local oscillator signal sources are realized.

[0143] (3) The C-band / intermediate frequency transceiving multiplexing chip is multiplexed in different modes, the multiplexing technology realizes multiple modes and multiple functions, effectively reduces redundant circuits in the system, improves the efficiency of the system and reduces the cost.

[0144] (4) The novel full-function dual-frequency phased array system and communication equipment provided by the application fuse transceivers of C-band and millimeter wave, support multiple working modes, realize circuit multiplexing and multiple working modes through reasonable planning of signal frequencies and design of switches, and support optimal dual-frequency joint communication mode according to requirements, have the advantages of long-distance transmission of C-band communication and millimeter wave communication, and improve the communication efficiency and performance.

[0145] In the above description of the present specification, the description of the terms "one embodiment", "another embodiment" or "some embodiments" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiments or examples are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0146] Although the embodiments of the present application have been shown and described, those skilled in the art can understand that various changes, modifications, replacements and variations can be made to the embodiments without departing from the principles and purposes of the present application, and the scope of the present application is defined by the claims and their equivalents.

[0147] The above is a specific description of the preferred embodiments of the present application, but the present application is not limited to the above embodiments, and those skilled in the art can make various equivalent modifications or replacements without departing from the spirit of the present application, and these equivalent modifications or replacements are all included in the scope defined by the claims of the present application.

Claims

1. A dual-frequency frequency source for fusion multiplexing, characterized in that, The phase-locked loop, the first frequency multiplier, the second frequency multiplier, the frequency divider, the first single-pole double-throw switch and the second single-pole double-throw switch are connected in series. The signal output end of the phase-locked loop is connected with the first active end of the first single-pole double-throw switch and the input end of the first frequency multiplier, the fixed end of the first single-pole double-throw switch is connected with the input end of the second frequency multiplier, and the output end of the first frequency multiplier and the output end of the second frequency multiplier respectively output millimeter wave local oscillator signals. The phase-locked loop is connected in series with the frequency divider, and the output end of the frequency divider is connected with the first active end of the second single-pole double-throw switch, and the fixed end of the second single-pole double-throw switch outputs C-band local oscillator signals. The phase-locked loop, the first frequency multiplier, the second frequency multiplier and the first single-pole double-throw switch form a millimeter wave frequency source, and the phase-locked loop connected in series with the frequency divider and the second single-pole double-throw switch form a C-band frequency source, so as to realize the functions of outputting millimeter wave local oscillator signals and C-band dual-frequency local oscillator signals.

2. The dual-frequency combined multiplexed frequency source of claim 1, wherein, The working frequency of the phase-locked loop is between the C-band and the millimeter wave band. The second active end of the first single-pole double-throw switch is connected with an external millimeter wave signal source, and the switching of the input of the external millimeter wave signal source is realized through the first single-pole double-throw switch. The second active end of the second single-pole double-throw switch is connected with an external C-band signal source, and the switching of the phase-locked loop and the external C-band signal source is realized through the second single-pole double-throw switch.

3. A fully functional millimeter-wave CMOS 4+1 phased array chip, characterized in that, The phase-locked loop, the first frequency multiplier, the second frequency multiplier, the frequency divider, the first single-pole double-throw switch and the second single-pole double-throw switch are connected in series. The millimeter wave mixer includes a millimeter wave up-mixer and a millimeter wave down-mixer; The combiner is connected with the radio frequency end of the millimeter wave down-mixer; The splitter is connected with the radio frequency end of the millimeter wave up-mixer; The phased array front end includes a plurality of first-type radio frequency channels; The first-type radio frequency channels include receiving channels and transmitting channels, and each channel includes an antenna end and a common end; The common end of the receiving channel is connected to the combining end of the combiner, and the common end of the transmitting channel is connected to the splitting end of the splitter; The calibration channel includes a second-type radio frequency channel, a calibration single-pole double-throw switch, a calibration antenna end, a calibration signal end and a calibration local oscillator end; the calibration antenna end is coupled with the antenna end of the first-type radio frequency channel; The output end of the first frequency multiplier of the dual-frequency fusion multiplexing frequency source according to claim 1 or 2 is connected with the calibration local oscillator end, and the output end of the second frequency multiplier and the local oscillator end of the millimeter wave mixer are connected.

4. The fully functional millimeter-wave CMOS 4+1 phased array chip of claim 3, wherein, The antenna end of the first-type radio frequency channel is used for connecting with a millimeter wave phased array antenna; The receiving channel of the first-type radio frequency channel includes a millimeter wave variable gain low noise amplifier and a receiving phase shifter in sequence from the antenna end to the common end; The transmitting channel of the first-type radio frequency channel includes a millimeter wave variable gain power amplifier and a transmitting phase shifter in sequence from the antenna end to the common end.

5. The fully functional millimeter-wave CMOS 4+1 phased array chip of claim 3, wherein, The second-type radio frequency channel of the calibration channel includes a calibration receiving channel and a calibration transmitting channel; The calibration receiving channel includes a low noise amplifier and a calibration down-mixer, and the calibration transmitting channel includes a power amplifier and a calibration up-mixer; The output end of the power amplifier is connected with the first movable end of the calibration single-pole double-throw switch, the input end of the low-noise amplifier is connected with the second movable end of the calibration single-pole double-throw switch, and the fixed end of the calibration single-pole double-throw switch is used as a calibration antenna end; the calibration antenna end is coupled with the antenna ends of the receiving channels and the transmitting channels of each first-type radio frequency channel of the phased array front end to realize amplitude and phase calibration between multiple channels; and the calibration signal end inputs or outputs calibration signals through a balun.

6. The fully functional millimeter-wave CMOS 4+1 phased array chip of claim 5, wherein, The output end of the first frequency multiplier of the millimeter wave frequency source is connected with the local oscillator end of the calibration up-mixer and the calibration down-mixer; the output end of the second frequency multiplier of the millimeter wave frequency source is connected with the local oscillator end of the millimeter wave down-mixer and the input end of the first quadrature signal generator, and a plurality of quadrature local oscillator signals are generated; and the local oscillator end of the millimeter wave up-mixer is connected with the plurality of quadrature local oscillator signals. The intermediate frequency signals are connected with the intermediate frequency end of the millimeter wave up-mixer through a plurality of quadrature intermediate frequency signals output by the second quadrature signal generator; the millimeter wave up-mixer mixes the plurality of quadrature local oscillator signals and the plurality of quadrature intermediate frequency signals to output an upper sideband millimeter wave signal, so as to suppress the mirror interference signal of the lower sideband.

7. A C-band / intermediate frequency transceiver multiplex chip, characterized by, It comprises: a C-band / intermediate frequency transceiving channel comprising a C-band / intermediate frequency receiving channel and a C-band / intermediate frequency transmitting channel; a transceiving single-pole double-throw switch comprising a receiving single-pole double-throw switch and a transmitting single-pole double-throw switch; a dual-frequency fusion multiplexing frequency source as claimed in any one of claims 1 or 2, wherein the C-band frequency source output end, i.e. the fixed end of the second single-pole double-throw switch, is connected with the local oscillator end of the C-band / intermediate frequency transceiving channel; the intermediate frequency end of the C-band / intermediate frequency transceiving channel is connected with the fixed end of the transceiving single-pole double-throw switch; the connection relationship between the fixed end and the movable end of the transceiving single-pole double-throw switch is controlled to multiplex the C-band / intermediate frequency transceiving multiplexing chip, so as to realize the gating and switching of different signal paths.

8. A C-band / IF transceiving multiplex chip according to claim 7, wherein, the C-band / intermediate frequency receiving channel comprises a C-band / intermediate frequency variable gain low noise amplifier and a C-band / intermediate frequency down-mixer connected in series; and the C-band / intermediate frequency transmitting channel comprises a C-band / intermediate frequency up-mixer and a C-band / intermediate frequency variable gain power amplifier connected in series; the C-band / intermediate frequency variable gain low noise amplifier is connected with the fixed end of the receiving single-pole double-throw switch, and the C-band / intermediate frequency variable gain power amplifier is connected with the fixed end of the transmitting single-pole double-throw switch; the connection relationship between the fixed end and the movable end of the transceiving single-pole double-throw switch is controlled to multiplex the C-band / intermediate frequency transceiving multiplexing chip, so as to realize the gating and switching of different signal paths.

9. A dual-band combined radio frequency transceiver, characterized by It comprises: a full-function millimeter wave CMOS 4+1 phased array chip as claimed in any one of claims 3-6; a C-band / intermediate frequency transceiving multiplexing chip as claimed in any one of claims 7 or 8, referred to as a first C-band / intermediate frequency transceiving multiplexing chip; a C-band front end, referred to as a first C-band front end; The intermediate frequency end of the full-function millimeter wave CMOS 4+1 phased array chip is connected with the first active end of the transceiving single-pole double-throw switch of the first C-band / intermediate frequency transceiving multiplexing chip, and the signal end of the first C-band front end is connected with the second active end of the transceiving single-pole double-throw switch of the first C-band / intermediate frequency transceiving multiplexing chip; The connection relationship between the fixed end and the active end of the transceiving single-pole double-throw switch of the first C-band / intermediate frequency transceiving multiplexing chip is controlled to realize the switching of the intermediate frequency signal path and the C-band signal path.

10. The dual-band fused RF transceiver of claim 9, wherein, The fixed end of the transceiving single-pole double-throw switch of the first C-band / intermediate frequency transceiving multiplexing chip is connected with the first active end, which is connected in series with the balun and the intermediate frequency end of the full-function millimeter wave CMOS 4+1 phased array chip, to realize the connection between the first C-band / intermediate frequency transceiving multiplexing chip and the full-function millimeter wave CMOS 4+1 phased array chip, and the disconnection with the first C-band front end, thereby forming a millimeter wave phased array transceiver. The fixed end of the transceiving single-pole double-throw switch of the first C-band / intermediate frequency transceiving multiplexing chip is connected with the second active end, and the first C-band / intermediate frequency transceiving multiplexing chip is connected with the first C-band front end, and is disconnected with the full-function millimeter wave CMOS 4+1 phased array chip, to realize the first C-band transceiver.

11. A full-function dual-frequency fused radio frequency transceiver system, characterized by, It comprises: a dual-frequency integrated radio frequency transceiver as claimed in claim 9 or 10; a C-band / intermediate frequency transceiving multiplexing chip as claimed in claim 7 or 8, referred to as a second C-band / intermediate frequency transceiving multiplexing chip; a C-band front end, referred to as a second C-band front end; a full-digital control logic circuit; the signal end of the second C-band front end is connected with one active end of the transceiving single-pole double-throw switch of the second C-band / intermediate frequency transceiving multiplexing chip, and the other active end is left floating, to realize the second C-band transceiver; The full-function dual-frequency integrated radio frequency transceiving system has three working modes: a millimeter wave phased array transceiver and a C-band transceiver integrated and concurrent working mode; a C-band / intermediate frequency transceiving multiplexing chip supporting a full-function millimeter wave CMOS 4+1 phased array chip independent working mode; and a multiplexed C-band / intermediate frequency transceiving multiplexing chip realizing a two-C-band transceiver cooperative working mode.

12. The fully functional dual-frequency fused radio frequency transceiver system according to claim 11, wherein, The full-digital control logic circuit sends a control instruction to control the connection relationship between the fixed end and the active end of the transceiving single-pole double-throw switch of the first C-band / intermediate frequency transceiving multiplexing chip, i.e., the connection relationship between the first C-band / intermediate frequency transceiving multiplexing chip and the full-function millimeter wave CMOS 4+1 phased array chip and the first C-band front end, to realize the working switching of the millimeter wave transceiver and the first C-band transceiver.

13. The fully functional dual-frequency fused radio frequency transceiver system according to claim 11, wherein, For the millimeter wave phased array transceiver and C-band transceiver integrated and concurrent working mode, the full-digital control logic circuit provides a control instruction to the transceiving single-pole double-throw switch of the first C-band / intermediate frequency transceiving multiplexing chip, so that the fixed end is connected with the first active end, the dual-frequency integrated radio frequency transceiver and the second C-band transceiver are controlled to work simultaneously, and the first C-band front end is controlled to stop working, to finally realize the millimeter wave phased array transceiver and C-band transceiver integrated and concurrent working mode.

14. The fully functional dual-frequency fused radio frequency transceiver system according to claim 11, wherein, For the C-band / IF transceiver multiplexing chip supports full-function millimeter wave CMOS 4+1 phased array chip independent operation mode, the all-digital control logic circuit, to the second C-band transceiver provides control instructions, stop the C-band transceiver work, at the same time to the first C-band / IF transceiver multiplexing chip's transceiver single pole double throw switch provides control instructions, make fixed end and first movable end connection, to realize the first C-band / IF transceiver multiplexing chip as IF module supports millimeter wave phased array transceiver independent operation mode.

15. The fully functional dual-frequency fused radio frequency transceiver system according to claim 11, wherein, For the multiplexing C-band / IF transceiver multiplexing chip realizes two C-band transceiver collaborative operation mode, by the all-digital control logic circuit, to full-function millimeter wave CMOS 4+1 phased array chip provides control instructions, stop full-function millimeter wave CMOS 4+1 phased array chip work, at the same time control first C-band transceiver and second C-band transceiver work together, constitute two input / two output's C-band transceiver's independent operation mode, to realize the multiplication of transmission rate.

16. The fully functional dual-frequency fused radio frequency transceiver system according to claim 11, wherein, The full-function dual-frequency fusion radio frequency transceiver system further comprises an ESD protection circuit, which is electrically connected with the full-function millimeter wave CMOS 4+1 phased array chip, the C-band front end and the C-band / IF transceiver multiplexing chip, for preventing or reducing the damage of electrostatic discharge to electronic equipment and circuit.

17. A communication device, characterized by The dual-frequency fusion multiplexing frequency source according to any one of claims 1-10; or the full-function millimeter wave CMOS 4+1 phased array chip according to any one of claims 3-6; or the C-band / IF transceiver multiplexing chip according to any one of claims 7-10; or the dual-frequency fusion radio frequency transceiver according to any one of claims 9-16; or the full-function dual-frequency fusion radio frequency transceiver system architecture and its multiple operation modes according to any one of claims 11-16.

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