Gas-phase hydrogen peroxide generation assembly and substrate processing apparatus including same

Abstract

Disclosed are a gas-phase hydrogen peroxide generation assembly and a substrate processing apparatus including same. The gas-phase hydrogen peroxide generation assembly may have a vaporization module and a fluid supply module. The vaporization module may be configured to convert liquid hydrogen peroxide into gas-phase hydrogen peroxide. The fluid supply module may include a first line configured to, in a first operation mode, supply the liquid hydrogen peroxide to the vaporization module. The fluid supply module may be configured to, in a second operation mode, discharge a residual of the liquid hydrogen peroxide to a drain using a discharge fluid. The residual may be generated in the first operation mode and remain in the first line.

Description

Gaseous hydrogen oxide generation assembly and substrate processing device equipped with the same

[0001] The present invention relates to a gaseous hydrogen oxide generation assembly and a substrate processing apparatus equipped with the same.

[0002]

[0003] Generally, various processing steps are performed on the semiconductor substrate during the semiconductor device manufacturing process. Examples of such processing steps include oxidation, nitridation, ion implantation, and deposition. There is also a hydrogen or deuterium heat treatment process to improve the interface characteristics of the semiconductor device.

[0004] In wet oxidation, which is one of the oxidation processes, water vapor can be supplied to a reaction chamber containing a semiconductor substrate. Water vapor can be generated in a vaporizer, but impurities may also be generated during the process of water vapor generation. These impurities may enter the reaction chamber along with the water vapor and have an adverse effect on the semiconductor substrate.

[0005]

[0006] As determined by the inventors, some of the ultrapure water supplied to a vaporizer to generate steam may remain in the piping connected to the vaporizer. While remaining in the piping, the residual ultrapure water may deteriorate. The deteriorated ultrapure water may be vaporized in the next vaporization process and supplied to the reaction chamber. Steam produced from the deteriorated ultrapure water contains impurities (particles) and may adversely affect the semiconductor substrate.

[0007] In light of these problems, one objective of the present invention is to provide a gaseous hydrogen oxide generation assembly and a substrate processing apparatus equipped with the same, which can prevent the generation of impurities caused by residual liquid hydrogen oxide that does not participate in vaporization.

[0008] The problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned technical problems will be clearly understood by those skilled in the art from the description below.

[0009]

[0010] A gaseous hydrogen oxide generation assembly according to one aspect of the present invention for realizing the above-mentioned problem comprises: a vaporization module formed to convert liquid hydrogen oxide into gaseous hydrogen oxide; and a fluid supply module having a first line formed to supply the liquid hydrogen oxide to the vaporization module in a first operating mode, wherein the fluid supply module is formed to discharge a residual portion of the liquid hydrogen oxide to a drain using a discharge fluid in a second operating mode, and the residual portion may be generated in the first operating mode and remain in the first line.

[0011] Here, the fluid supply module may include a second line formed to guide the liquid hydrogen oxide toward the first line; a third line formed to guide the discharge fluid toward the first line; and a fourth line formed to guide the liquid hydrogen oxide to the drain.

[0012] Here, the fluid supply module may further include a first switching valve connected to the first to fourth lines and formed to selectively communicate one of the second line and the third line with the first line.

[0013] Here, the fluid supply module may further include a fifth line formed to connect the first line and the fourth line to guide the liquid hydrogen oxide and the discharge fluid to the drain.

[0014] Here, the fluid supply module may further include a second switching valve formed to connect the first line and the fifth line, and to selectively connect the first line to one of the vaporization module and the fifth line.

[0015] Here, the fluid supply module may further include a pump installed in the fifth line and configured to pump the liquid hydrogen oxide and the discharge fluid toward the drain.

[0016] Here, the third line is provided with an inlet disposed in the atmosphere or within a chamber, and the discharge fluid may include gas in the atmosphere or within the chamber.

[0017] A substrate processing apparatus according to another aspect of the present invention comprises: a chamber having a reaction chamber formed to accommodate a reaction gas containing gaseous hydrogen oxide and a substrate to be processed by said reaction gas; a vaporization module communicating with said reaction chamber and formed to convert liquid hydrogen oxide into said gaseous hydrogen oxide; and a fluid supply module having a first line formed to supply said liquid hydrogen oxide to said vaporization module in a first operating mode, wherein the fluid supply module is formed to discharge a residual of said liquid hydrogen oxide to a drain using a discharge fluid in a second operating mode, and said residual may be generated in said first operating mode and remain in said first line.

[0018] Here, the fluid supply module may include a second line formed to guide the liquid hydrogen oxide toward the first line; a third line formed to guide the discharge fluid toward the first line; and a fourth line formed to guide the liquid hydrogen oxide to the drain.

[0019] Here, the fluid supply module may further include a first switching valve connected to the first to fourth lines and formed to selectively communicate one of the second line and the third line with the first line.

[0020] Here, the fluid supply module may further include a fifth line formed to connect the first line and the fourth line to guide the liquid hydrogen oxide and the discharge fluid to the drain.

[0021] Here, the fluid supply module may further include a second switching valve formed to connect the first line and the fifth line, and to selectively connect the first line to one of the vaporization module and the fifth line.

[0022] Here, the fluid supply module may further include a pump installed in the fifth line and configured to pump the liquid hydrogen oxide and the discharge fluid toward the drain.

[0023] Here, the third line is provided with an inlet disposed in the atmosphere or within a chamber, and the discharge fluid may include gas in the atmosphere or within the chamber.

[0024] Here, the chamber comprises a housing that defines the reaction chamber and a door formed to open and close the reaction chamber, wherein the housing comprises an inner housing formed to accommodate the reaction gas acting as a first pressure on the substrate and the substrate; and an outer housing formed to accommodate the inner housing and a protective gas that forms a second pressure set in relation to the first pressure, and the door is formed to close at least one of the inner housing and the outer housing, and the gas in the chamber may be the protective gas.

[0025] Here, the second pressure may be a pressure higher than atmospheric pressure.

[0026]

[0027] According to the gaseous hydrogen oxide generation assembly and substrate processing apparatus equipped with the same configured as above according to the present invention, a fluid supply module supplies liquid hydrogen oxide in a first operating mode to a vaporization module formed to convert liquid hydrogen oxide into gaseous hydrogen oxide, and in the process, the residual liquid hydrogen oxide remaining in the line of the fluid supply module is discharged to a drain using a discharge fluid in a second operating mode. Therefore, the residual liquid hydrogen oxide that did not participate in vaporization in the first operating mode can be removed from the line of the fluid supply module. Accordingly, the generation of impurities resulting from the deterioration of the residual liquid hydrogen oxide can be structurally prevented.

[0028] The effects of the present invention are not limited to the effects described above, and should be understood to include all effects that can be inferred from the configuration of the invention described in the detailed description or claims of the present invention.

[0029]

[0030] FIG. 1 is a conceptual diagram of a substrate processing apparatus according to one embodiment of the present invention.

[0031] FIG. 2 is a block diagram illustrating the controllable operation of the substrate processing device of FIG. 1.

[0032] FIG. 3 is a conceptual diagram showing one operating state of a gaseous hydrogen oxide generation assembly according to another embodiment of the present invention.

[0033] Figure 4 is a conceptual diagram showing a different operating state of the gaseous hydrogen oxide generation assembly of Figure 3.

[0034] FIG. 5 is a conceptual diagram showing one operating state of a gaseous hydrogen oxide generation assembly according to another embodiment of the present invention.

[0035] FIG. 6 is a conceptual diagram showing one operating state of a gaseous hydrogen oxide generation assembly according to another embodiment of the present invention.

[0036] FIG. 7 is a conceptual diagram showing one operating state of a gaseous hydrogen oxide generation assembly according to another embodiment of the present invention.

[0037]

[0038] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0039] The present invention is not limited to the embodiments disclosed below, but can be modified and implemented in various different forms. The embodiments provided are merely intended to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. Accordingly, the present invention should be understood not to be limited to the embodiments disclosed below, but to include all modifications, equivalents, and substitutions that fall within the technical spirit and scope of the present invention, as well as substituting or adding the configuration of any one embodiment with the configuration of another embodiment.

[0040] The attached drawings are intended only to facilitate understanding of the embodiments disclosed in this specification, and the technical concept disclosed in this specification is not limited by the attached drawings; rather, it should be understood that they include all modifications, equivalents, and substitutions that fall within the spirit and technical scope of the invention. In the drawings, components may be depicted as being exaggeratedly large or small in size or thickness for the sake of convenience of understanding, but the scope of protection of the invention should not be interpreted restrictively as a result thereof.

[0041] The terms used in this specification are used merely to describe specific embodiments or examples and are not intended to limit the invention. Furthermore, singular expressions include plural expressions unless the context clearly indicates otherwise. Terms such as "includes" or "consists of" in this specification are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in this specification. That is, terms such as "includes" or "consists of" in this specification should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0042] Terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but said components are not limited by said terms. These terms are used solely for the purpose of distinguishing one component from another.

[0043] When it is stated that one component is "connected / communicated" or "connected" to another component, it should be understood that while it may be directly connected / communicated or connected to that other component, there may also be other components in between. On the other hand, when it is stated that one component is "directly connected / communicated" or "directly connected" to another component, it should be understood that there are no other components in between.

[0044] When it is stated that one component is "above" or "below" another component, it should be understood that it is not only placed directly above the other component, but that another component may also exist in between.

[0045] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.

[0046] FIG. 1 is a conceptual diagram of a substrate processing apparatus according to one embodiment of the present invention.

[0047] Referring to the drawing, the substrate processing device (100) may include an inner chamber (110), an outer chamber (120), a fluid supply module (130), an exhaust module (140), and a vaporization module (160).

[0048] The inner chamber (110) may have a housing (inner housing) that forms a reaction space for accommodating a substrate. A door for opening and closing the reaction space may be provided at the bottom of the housing. The inner chamber (110) may be made of a non-metallic material, for example, quartz, to reduce the risk of contamination of the substrate in a high-temperature and high-pressure working environment. Depending on the operation of a heater (not shown) placed on the outside of the housing, the internal temperature of the reaction space may reach hundreds to thousands of degrees Celsius or higher. The substrate may be, for example, a semiconductor wafer mounted on a loading platform. The substrate is not limited to the wafer and may be any other as long as it is a base structure for making circuits. For example, the substrate may also include glass for making displays. The loading platform may be a boat for loading one or more substrates.

[0049] The outer chamber (120) may be provided with a housing (outer housing) having a protective space that accommodates the inner chamber (110). A door is also provided at the bottom of the outer housing, and the door (outer door) can descend together with the door (inner door) of the inner chamber (110) to open the protective space. The inner chamber (110) may be mounted on the outer chamber (120). Unlike the inner chamber (110), the outer chamber (120) may be made of metal because it is free from concerns about causing contamination to the substrate.

[0050] The fluid supply module (130) is configured to supply fluid to the reaction chamber and the protection chamber. The fluid supply module (130) may have a fluid supply unit (131) connected to a utility (fluid supply facility) of a substrate processing plant. The fluid supply unit (131) may selectively provide, for example, hydrogen gas (H2), deuterium gas (D2), gaseous hydrogen oxide, fluorine gas (F2), ammonia gas (NH3), chlorine gas (Cl2), nitrogen gas (N2), etc. as a reaction gas to the reaction chamber.

[0051] The above gaseous hydrogen oxide can be produced by a vaporization module (160) to be described later and supplied to the reaction chamber. In that case, the fluid supply module (130) can provide a raw material fluid to the vaporization module (160) to produce the above gaseous hydrogen oxide. The above gaseous hydrogen oxide can be used for wet oxidation, atomic layer deposition (ALD), chemical vapor deposition (CVD), annealing, etc.

[0052] The fluid supply unit (131) may provide a protective gas to the protective chamber, for example, nitrogen gas or argon gas (Ar), which is an inert gas. The reaction gas and the protective gas may simply be referred to as process gas. The process gas is injected into the reaction chamber or the protective chamber through the reaction gas line (133) or the protective gas line (135). The protective gas supplied to the protective chamber is specifically injected into the protective region of the outer chamber (120), excluding the space occupied by the inner chamber (110).

[0053] The pressure of the process gas may be higher than atmospheric pressure (high pressure) in the reaction chamber and the protection chamber, for example, from several atmospheres to tens of atmospheres or higher. When the pressure of the reaction gas in the reaction chamber is the first pressure and the pressure of the protection gas in the protection chamber is the second pressure, they may be maintained within a set relationship (range). For example, the second pressure may be set to be substantially equal to or slightly higher than the first pressure. Such a pressure relationship provides the advantage of preventing the reaction gas from leaking from the inner chamber (110) and preventing the inner chamber (110) from breaking. The second pressure may also be set to be slightly lower than the first pressure, in which case the effect of preventing the inner chamber (110) from breaking can be achieved similarly to the above.

[0054] The exhaust module (140) is configured to exhaust the process gas from the reaction chamber and the protection chamber. To exhaust the reaction gas from the reaction chamber, an exhaust pipe (141) may be connected to the upper part of the inner chamber (110). Similarly, to exhaust the protection gas from the protection chamber, an exhaust pipe (145) connected to the outer chamber (120) may be provided. If these exhaust pipes (141 and 145) are integrated into one, the reaction gas is diluted by the protection gas during the exhaust process, and its concentration is lowered.

[0055] The vaporization module (160) is configured to convert the raw material fluid into gaseous hydrogen oxide, specifically to perform a phase change. The gaseous hydrogen oxide is a gaseous molecule formed by the combination of oxygen and hydrogen, and may include at least one of H2O, H2O2, and H2O3. The raw material fluid is liquid hydrogen oxide, which may be, for example, ultrapure water. The vaporization module (160) may be installed or connected to the reaction gas line (133). The vaporization module (160) may also be connected to the reaction chamber through the reaction gas line (133). The gaseous hydrogen oxide is supplied to the reaction chamber and may form part of the reaction gas.

[0056] The vaporization module (160) may include, for example, a vaporization chamber and a heating unit. The vaporization chamber may be located in the atmosphere of the protective gas, for example, in the protective chamber. The heating unit is configured to generate heat so that the temperature of the vaporization chamber reaches a set temperature. The heating unit may be positioned to surround the vaporization chamber. The heat generated from the heating unit may heat the raw material fluid to cause a phase change. The vaporization module (160) may be installed inside the inner door or at the bottom of the inner door.

[0057] The control configuration of the substrate processing device (100) is explained with reference to FIG. 2. FIG. 2 is a block diagram for explaining the control operation of the substrate processing device of FIG. 1.

[0058] Referring to the drawing (and FIG. 1), the substrate processing device (100) may further include a heating module (150), a sensing module (170), a control module (180), and a storage module (190) in addition to the fluid supply module (130) and exhaust module (140) described above.

[0059] The heating module (150) is configured to include the aforementioned heater. The heater may be positioned in the protective chamber facing the inner housing. The heater may be positioned on the side of the inner housing in this drawing.

[0060] The detection module (170) is configured to detect the environment of the chamber (110, 120) and further the vaporization module (160). The detection module (170) may be equipped with a pressure gauge (171) and a temperature gauge (175). The pressure gauge (171) and the temperature gauge (175) may be installed in the chamber (110, 120), further the vaporization module (160), or in a part connected to the vaporization module (160) {e.g., a reaction gas line (133)}. The detection module (170) may also have a gas detector (not shown) for detecting the presence of a specific gas.

[0061] The control module (180) is configured to control the fluid supply module (130) and the exhaust module (140), etc. The control module (180) can control the operation of the fluid supply module (130), etc. based on the detection result of the detection module (170). The storage module (190) is configured to store data, programs, etc. that the control module (180) can refer to for control.

[0062] According to this configuration, the control module (180) can control the fluid supply module (130) and the vaporization module (160) based on the pressure of the chamber (110, 120) and the vaporization module (160) obtained through the pressure gauge (171). Depending on the operation of the fluid supply module (130) and the vaporization module (160), the reaction gas can be injected into the reaction chamber so that the reaction chamber reaches a reaction pressure (the first pressure). The protection space can be filled with the protection gas to reach a protection pressure (the second pressure).

[0063] The control module (180) can also control the operation of the exhaust module (140) based on the pressure of the chamber (110, 120) and the vaporization module (160) obtained through the pressure gauge (171). Depending on the operation of the exhaust module (140), the reaction gas can be exhausted from the reaction chamber. The protection gas can be exhausted from the protection space.

[0064] The control module (180) can control the operation of the heating module (150) based on the temperature of the chamber (110, 120) obtained through the temperature gauge (175). Depending on the operation of the heating module (150), the reaction gas can reach a reaction temperature for processing the substrate.

[0065] The control module (180) can also control the operation of the vaporization module (160) and the fluid supply module (130) so that the vaporization module (160) generates the gaseous hydrogen oxide at a set temperature and pressure.

[0066] The configuration for generating the above gaseous hydrogen oxide is explained with reference to FIGS. 3 to 7.

[0067] FIG. 3 is a conceptual diagram showing one operating state of a gaseous hydrogen oxide generation assembly according to another embodiment of the present invention.

[0068] Referring to the drawing, the fluid supply module (200) is a embodiment of the fluid supply module (130, see FIG. 1) of the preceding embodiment, and for convenience, a reference numeral in the 200s is assigned.

[0069] The fluid supply module (200) may have a line (flow path) for supplying the liquid hydrogen oxide to the vaporization module (160).

[0070] The above lines may have a first line (210), a second line (220), a third line (230), and a fourth line (240). The first line (210) may be connected to a vaporization module (160) to form a common flow path through which all fluids supplied to the vaporization module (160) pass. The second line (220) may form a flow path that guides the liquid hydrogen oxide toward the first line (210). The second line (220) may be connected to a liquid supply unit (not shown) which is part of a fluid supply unit (131, see FIG. 1) that discharges the liquid hydrogen oxide. The liquid supply unit may include a pump (P) (and a reservoir) for pumping the liquid hydrogen oxide. The third line (230) may form a flow path that guides the discharge fluid toward the first line (210). The discharge fluid may be intended to pump the remaining liquid hydrogen oxide remaining in the first line (210) to the drain (D). The discharge fluid may be, for example, a gas, more specifically, an inert gas. To guide the discharge fluid, the third line (230) may be connected to a gas supply unit, for example, a gas tank (T). The fourth line (240) may form a flow path that guides the liquid hydrogen oxide to the drain (D).

[0071] The fluid flow path in the above line can be changed by the first switching valve (250). The first switching valve (250) can be connected to the first line (210), the second line (220), the third line (230), and the fourth line (240). The first switching valve (250) can connect the second line (220) to the first line (210) or connect the third line (230) to the first line (210). The second line (220) or the third line (230) can be connected to the fourth line (240) when the connection to the first line (210) is released. The first switching valve (250) can be, for example, a six-port valve.

[0072] The above-mentioned flow path may further include a fifth line (260), and the fifth line (260) may be connected to the first line (210) by a second switching valve (270). The fifth line (260) may form a flow path that connects the first line (210) and the fourth line (240) to guide the liquid hydrogen oxide and the discharge fluid to the drain (D). A backflow prevention valve (265) is installed in the fifth line (260), and the backflow prevention valve (265) may prevent the liquid hydrogen oxide from flowing back from the fourth line (240) to the fifth line (260). For example, the backflow prevention valve (265) may be a check valve, but is not limited thereto. The second switching valve (270) may be formed to connect the first line (210) to the vaporization module (160) or the fifth line (260). The second switching valve (270) may be, for example, a three-way valve. The second switching valve (270) may be located inside the outer chamber (120), specifically in the protection chamber.

[0073] The fluid supply module (200) can operate to supply the liquid hydrogen oxide to the vaporization module (160) in a first operating mode. To this end, the control module (180, see FIG. 2) can control the first switching valve (250) so that the second line (220) is connected to the first line (210). The liquid hydrogen oxide can be supplied to the vaporization module (160) via the second line (220), the first switching valve (250), the first line (210), and the second switching valve (270) after being discharged from the pump (P). The liquid hydrogen oxide can be converted into the gaseous hydrogen oxide in the vaporization module (160) and injected into the reaction chamber.

[0074] Some of the above gaseous hydrogen oxide may not flow into the vaporization module (160) and may remain in the first line (210). Specifically, the residual gaseous hydrogen oxide may exist in the section between the first switching valve (250) and the second switching valve (270).

[0075] While the liquid hydrogen oxide is being supplied to the vaporization module (160), the discharge fluid may flow to the drain (D) via the first switching valve (250) and the fourth line (240) after being discharged from the gas tank (T). The discharge fluid may remove the liquid hydrogen oxide remaining in the fourth line (240).

[0076] In the above, the above lines, the first switching valve (250) and the second switching valve (270) can be understood as part of the reaction gas line (133, see FIG. 1). The above liquid supply unit and the above gas supply unit can be understood as part of the fluid supply unit (131, see FIG. 1).

[0077] Figure 4 is a conceptual diagram showing a different operating state of the gaseous hydrogen oxide generation assembly of Figure 3.

[0078] Referring to the drawing, the fluid supply module (200) can operate to discharge the residue to the drain (D) using the discharge fluid in a second operating mode. Specifically, the control module (180, see FIG. 2) can control the first switching valve (250) to allow the third line (230) to communicate with the first line (210). The control module (180) can also control the second switching valve (270) to allow the first line (210) to communicate with the fifth line (260).

[0079] After being discharged from the gas tank (T), the above discharge fluid can be discharged to the drain (D) by passing through the third line (230), the first switching valve (250), the first line (210), the second switching valve (270), the fifth line (260), and the fourth line (240) in sequence. During such flow, the discharge fluid may pressurize the residue to the drain (D), so that the residue can also be discharged to the drain (D) together with the discharge fluid.

[0080] By connecting the second line (220) to the fourth line (240) through the first switching valve (250), the gaseous hydrogen oxide discharged from the pump (P) can flow to the drain (D) via the second line (220), the first switching valve (250), and the fourth line (240).

[0081] FIG. 5 is a conceptual diagram showing one operating state of a gaseous hydrogen oxide generation assembly according to another embodiment of the present invention.

[0082] Referring to the drawing, the fluid supply module (300) has a configuration similar to the previous embodiment, but differs in the third line (330), the fifth line (360), and the second switching valve (370).

[0083] The main line (331) of the third line (330) is connected to the first line (310) through the first switching valve (350) {and the second switching valve (370)}, but the sub-line (333) branched from the main line (331) can be directly connected to the first line (310). An orifice (335) and a shut-off valve (337) may be installed in the sub-line (333).

[0084] The fifth line (360) may be branched from the main Euro (331) and connected to the fourth line (340). A pump (P') different from the previously described pump (P) may be installed in the fifth line (360). A first backflow prevention valve (365) may be installed at the downstream end of the pump (P') to prevent backflow from the fourth line (340).

[0085] The second switching valve (370) can connect the main flow path (331) and the fifth line (360). The second switching valve (370) may be, for example, a three-way valve. A second backflow prevention valve (315) may be located in the portion of the first line (310) located in the protection chamber to prevent backflow from the vaporization module (160), just like the first backflow prevention valve (365). The second backflow prevention valve (315) may also be a check valve, but is not limited to this as long as it is a valve capable of preventing backflow.

[0086] In the second operating mode, as the control module (180, see FIG. 2) operates the pump (P'), the residual liquid hydrogen oxide generated in the first operating mode can be discharged to the drain (D). The residual may be that which existed between the second backflow prevention valve (315) and the first switching valve (350).

[0087] As the control module (180) operates the first switching valve (350) and the second switching valve (370) in the second operating mode, the residue can be discharged to the drain (D) by sequentially passing through the first line (310), the first switching valve (350), the main flow path (331), the second switching valve (370), the fifth line (360), the pump (P'), and the fourth line (340).

[0088] In the process of pumping the above residue by the pump (P'), the discharge fluid may be introduced into the first line (310) through the sub-line (333). Since the discharge fluid is introduced for the purpose of preventing vacuum from occurring in the area near the check valve (315) in the first line (310), a small flow rate may be sufficient. The discharge fluid may be introduced into the first line (310) with the minimum necessary flow rate through the orifice (335) while the shut-off valve (337) is open.

[0089] When the main flow path (331) is connected to the first line (310) by the operation of the first switching valve (350) and the second switching valve (370), the discharge fluid may be discharged to the outside through the vaporization module (160) and the reaction chamber (third operating mode).

[0090] In an alternative embodiment, if the third operating mode is not adopted, the second switching valve (370) may be replaced with a backflow prevention valve. In that case, the fifth line (360) may be connected to the first switching valve (350) via the backflow prevention valve.

[0091] FIG. 6 is a conceptual diagram showing one operating state of a gaseous hydrogen oxide generation assembly according to another embodiment of the present invention.

[0092] Referring to the drawing, the fluid supply module (400) has a configuration similar to the previous embodiment, but differs in the third line (430) and the fifth line (460), etc. Additionally, a gas tank (T, see FIG. 5) may not be provided.

[0093] The third line (430) may have an inlet that is not connected to the gas tank (T) and is exposed to the atmosphere. The discharge fluid may be the atmosphere. A shut-off valve (435) may be installed in the third line (430).

[0094] A pump (P') is installed in the fifth line (460), and a first backflow prevention valve (465) may be installed at the downstream end of the pump (P'). A second backflow prevention valve (467) may be installed at the upstream end of the pump (P'). The second backflow prevention valve (467) blocks backflow from the fourth line (440) through the first switching valve (450) to the fifth line (460) in the first operating mode, and allows the flow of the residual amount toward the pump (P') as the pump (P') operates.

[0095] In the second operating mode, as the control module (180, see FIG. 2) operates the pump (P'), the residual liquid hydrogen oxide generated in the first operating mode may be discharged to the drain (D). The residual may be that which existed between the check valve (415) and the first switching valve (450).

[0096] As the control module (180) operates the first switching valve (450) in the second operating mode, the residue can be discharged to the drain (D) by sequentially passing through the first line (410), the first switching valve (450), the fifth line (460), the pump (P'), and the fourth line (440).

[0097] In the process of the pump (P') pumping the residue, the air may be introduced into the first line (410) through the third line (430). To this end, the control module (180) may open the shut-off valve (435). The air may help discharge the residue, just like the discharge fluid in the preceding embodiment.

[0098] In an alternative embodiment, a second switching valve (370) according to the preceding embodiment may be provided instead of the second backflow prevention valve (467). Additionally, a gas tank (T, see FIG. 5 above) connected to the second switching valve (370) may also be provided.

[0099] FIG. 7 is a conceptual diagram showing one operating state of a gaseous hydrogen oxide generation assembly according to another embodiment of the present invention.

[0100] Referring to the drawing, the fluid supply module (500) has a configuration similar to the previous embodiment, but differs in the third line (530), the fifth line (560), and the second switching valve (570).

[0101] The third line (530) may have an inlet exposed to an external chamber (120, see FIG. 1), specifically the protection chamber. The protection gas present in the protection chamber may be used as the discharge fluid. The protection gas may form the second pressure, specifically several to tens of atmospheres, as previously described. The third line (530) may be connected to the first line (510) through a second switching valve (570). The second switching valve (570) may be, for example, a three-way valve.

[0102] Meanwhile, unlike the preceding embodiment, a pump (P', see FIG. 6) may not be installed in the fifth line (560). A first backflow prevention valve (565) or a second backflow prevention valve (567) may be installed in the fifth line (560). The present invention is not limited to the above, and a pump (P', see FIG. 6) may be installed in the fifth line (560) as in the preceding embodiment if necessary.

[0103] In the second operating mode, the residual liquid hydrogen oxide generated in the first operating mode can be discharged to the drain (D) using the protective gas. The residual may be what remained between the second switching valve (570) and the first switching valve (550).

[0104] As the control module (180) operates the first switching valve (550) in the second operating mode, the residue can flow to the drain (D) by sequentially passing through the first line (510), the first switching valve (550), the fifth line (560), and the fourth line (540).

[0105] During the process in which the above residue is discharged to the drain (D), the above protection gas can be introduced into the first line (510). To this end, the control module (180) can control the second switching valve (570) to connect the third line (530) and the first line (510). Since the above protection gas forms a high pressure (the above second pressure), the above residue can be pumped to the drain (D) without a pump (P').

[0106] In an alternative embodiment, a second switching valve (370) according to the preceding embodiment may be provided instead of the second backflow prevention valve (567). Additionally, a gas tank (T, see FIG. 5 above) connected to the second switching valve (370) may also be provided.

[0107] In an alternative other embodiment, the second switching valve (570) may be a shut-off valve. When the shut-off valve is opened, the reaction chamber is connected to the first line (510) through the vaporization module (160), so the reaction gas can flow into the first line (510) and act as the discharge fluid. Since the reaction gas forms a high pressure (the first pressure) in the reaction chamber, the residue can also be pumped to the drain (D) without a pump (P').

[0108] In this specification, a processing device having a double chamber is described as an example of a substrate processing device (100), but the present invention is not limited thereto. Configurations such as a vaporization module (160), a fluid supply module (130, 200, 300, 400, 500), and a control module (180) may also be applied to a processing device having a single chamber. The single chamber consists of a housing and a door. A substrate is placed in the reaction chamber of the chamber, and a reaction gas for processing the substrate is supplied. The housing and the door may correspond to the inner housing and inner door of the aforementioned double chamber. The reaction gas may have a pressure equal to atmospheric pressure, or a pressure less than or greater than atmospheric pressure.

[0109] The configuration of the vaporization module (160), fluid supply module (130, 200, 300, 400, 500), and control module (180), etc., may also be applied to a semi-double chamber, which is an intermediate form between the double chamber and the single chamber. The semi-double chamber may have two housings {inner housing and outer housing} and one door. The two housings may be combined by their own shapes or with the intervention of separate members to form a closed space (corresponding to the protection zone). As in the previous embodiment, the substrate is placed in the reaction chamber of the inner housing and the reaction gas is injected, and the protection gas may be injected into the closed space. Unlike the previous embodiment, the door is not fully protected by the protection gas and is exposed to the outside. In this respect, the door may correspond to the outer door in the previous embodiment. The door can open and close the reaction chamber.

[0110] This specification exemplifies a batch-type processing apparatus, but the invention is not limited thereto. The invention may be applied as is to a single-wafer-type processing apparatus.

[0111]

[0112] The present invention has industrial applicability in the field of manufacturing substrate processing devices.

Claims

1. A vaporization module formed to convert liquid hydrogen oxide into gaseous hydrogen oxide; and A fluid supply module having a first line formed to supply the liquid hydrogen oxide to the vaporization module in a first operating mode, and The above fluid supply module is, In the second operating mode, the residual liquid hydrogen oxide is configured to be discharged to the drain using a discharge fluid, and The above residue is, A gaseous hydrogen oxide generation assembly that is generated in the above-mentioned first operating mode and remains in the above-mentioned first line.

2. In Paragraph 1, The above fluid supply module is, A second line formed to guide the liquid hydrogen oxide toward the first line; A third line formed to guide the discharge fluid toward the first line; and A gaseous hydrogen oxide generation assembly comprising a fourth line formed to guide the liquid hydrogen oxide to a drain.

3. In Paragraph 2, The above fluid supply module is, A gaseous hydrogen oxide generation assembly further comprising a first switching valve connected to the first to fourth lines and formed to selectively communicate one of the second line and the third line with the first line.

4. In Paragraph 2, The above fluid supply module is, A gaseous hydrogen oxide generation assembly further comprising a fifth line formed by connecting the first line and the fourth line to guide the liquid hydrogen oxide and the discharge fluid to the drain.

5. In Paragraph 4, The above fluid supply module is, A gaseous hydrogen oxide generation assembly further comprising a second switching valve formed to connect the first line and the fifth line, and to selectively connect the first line to one of the vaporization module and the fifth line.

6. In Paragraph 4, The above fluid supply module is, A gaseous hydrogen oxide generating assembly further comprising a pump installed in the fifth line above and formed to pump the liquid hydrogen oxide and the discharge fluid toward the drain.

7. In Paragraph 2, The above third line is, It is equipped with an inlet positioned in the atmosphere or within a chamber, and The above discharge fluid is, A gaseous hydrogen oxide generation assembly comprising the above atmosphere or gas within the above chamber.

8. A chamber having a reaction chamber formed to accommodate a reaction gas comprising gaseous hydrogen oxide and a substrate to be treated by said reaction gas; A vaporization module connected to the above reaction chamber and formed to convert liquid hydrogen oxide into gaseous hydrogen oxide; and A fluid supply module having a first line formed to supply the liquid hydrogen oxide to the vaporization module in a first operating mode, and The above fluid supply module is, In the second operating mode, the residual liquid hydrogen oxide is configured to be discharged to the drain using a discharge fluid, and The above residue is, A substrate processing device that occurs in the above-mentioned first operating mode and remains in the above-mentioned first line.

9. In Paragraph 8, The above fluid supply module is, A second line formed to guide the liquid hydrogen oxide toward the first line; A third line formed to guide the discharge fluid toward the first line; and A substrate processing device comprising a fourth line formed to guide the above liquid hydrogen oxide to a drain.

10. In Paragraph 9, The above fluid supply module is, A substrate processing device further comprising a first switching valve connected to the first to fourth lines and formed to selectively communicate one of the second line and the third line with the first line.

11. In Paragraph 9, The above fluid supply module is, A substrate processing apparatus further comprising a fifth line formed by connecting the first line and the fourth line to guide the liquid hydrogen oxide and the discharge fluid to the drain.

12. In Paragraph 11, The above fluid supply module is, A substrate processing device further comprising a second switching valve formed to connect the first line and the fifth line, and to selectively connect the first line to one of the vaporization module and the fifth line.

13. In Paragraph 11, The above fluid supply module is, A substrate processing apparatus further comprising a pump installed in the fifth line above and formed to pump the liquid hydrogen oxide and the discharge fluid toward the drain.

14. In Paragraph 9, The above third line is, It is equipped with an inlet positioned in the atmosphere or within a chamber, and The above discharge fluid is, A substrate processing device comprising the above atmosphere or the gas within the above chamber.

15. In Paragraph 14, The above chamber is, It includes a housing that defines the reaction chamber and a door formed to open and close the reaction chamber. The above housing is, An inner housing formed to accommodate the above substrate and the reaction gas acting as a first pressure on the above substrate; and It includes a protective gas that forms a second pressure set in relation to the first pressure and an outer housing formed to accommodate the inner housing, and The above door is, It is formed to close at least one of the inner housing and the outer housing, and The gas in the above chamber is, A substrate processing device, which is the above-mentioned protective gas.

16. In Paragraph 15, The above second pressure is, A substrate processing device with a pressure higher than atmospheric pressure.

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