Temperature control device and preparation method

Abstract

The present invention provides a temperature control device and a preparation method thereof, wherein a patterned electrode is disposed on a first substrate and a second substrate respectively, and then a thermoelectric array composed of a plurality of N-type and P-type semiconductor thermoelectric units arranged according to the design circuit rules is connected to the electrodes on the first and second substrates respectively, and then a phase change material layer is coated on the first substrate and / or the other surface of the second substrate. Packaging materials can also be further coated on the phase change material layer and on both sides of the thermoelectric array, the first substrate and the second substrate. The present invention combines a thermoelectric array with a phase change material, utilizes the phase change heat storage and latent heat release near the phase change temperature point, buffers and regulates temperature changes, and realizes cooling and heating by adaptively regulating the current direction conversion, thereby realizing self-touch temperature regulation of the target surface, effectively reducing energy consumption, and can be applied to various complex sensing surfaces.

Description

Technical Field

[0001] The present invention belongs to the field of artificial intelligence technology, and in particular relates to a temperature control device and a preparation method thereof. Background Art

[0002] With the development of artificial intelligence technology, our society is constantly changing at the industrial, technological and digital revolution levels. Artificial intelligence can be used to simulate, extend and expand human consciousness, thinking, actions and functions. For example, when the target object is electronic skin, it can imitate the functions of human skin and sense and regulate external signals, making electronic skin one of the hot issues in international research today. It has very important application prospects in many fields such as bionic intelligent robots, human prostheses, and wearable devices. However, human skin can not only protect the operation of internal organs of the human body from external interference, but also is an important source of information acquisition, mainly including force sensing of pressure, tension, and vibration, and temperature sensing of heat loss, cold, and heat. However, the current research on electronic skin mainly focuses on tactile sensing of force, and has made significant progress, but the research on temperature sensing is relatively small. Changes in ambient temperature often bring additional interference to the signals collected by the stimulation sensors. Therefore, integrating the corresponding temperature sensors and temperature control systems into the electronic skin and simulating the constant temperature adaptive feedback regulation function of human skin, that is, the electronic skin can achieve adaptive regulation of the external environmental heat. The integrated design with multiple functions such as touch, temperature sensing, and adaptive regulation will be an important trend in the future development of electronic skin.

[0003] At present, the design of electronic skin with multiple functions is still imperfect, and there is an urgent need to solve the multifunctional design and preparation of electronic skin that truly simulates human skin. Summary of the invention

[0004] The purpose of the present invention is to overcome the deficiencies of the above-mentioned prior art. Firstly, a temperature control device is provided to solve the intelligent characteristics of the target object, such as touch sensing, temperature sensing, and adaptive control.

[0005] The temperature control device provided by the present invention comprises:

[0006] Thermoelectric array, including a plurality of N-type semiconductor thermoelectric units and P-type semiconductor thermoelectric units arranged according to the design circuit rules to realize the adaptive temperature sensing function;

[0007] A first substrate, wherein one surface thereof has a first electrode corresponding to each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units, and the first electrode is connected to one end surface of each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units correspondingly;

[0008] A second substrate, wherein one surface of the second substrate has a second electrode corresponding to each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units, and the second electrode is connected to the other end surface of each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units so that each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units are sandwiched between the first substrate and the second substrate and form the design circuit regular arrangement structure;

[0009] The phase change material layer is used to realize phase change heat storage and latent heat release near the phase change temperature point, and is covered on the outward surface of the first substrate and / or the second substrate.

[0010] As an optional structure of the temperature control device of the present invention, it may also include a packaging layer, which is coated on the phase change material layer and covers both sides of the combined thermoelectric array, the first substrate and the second substrate.

[0011] As an optional structure of the temperature control device of the present invention, the phase change material is one of neopentyl glycol (NPG), amino-2-methyl-1,3-propanediol (AMP), trimethylolethane (PG), trimethylolaminomethane (TAM), pentaerythritol (PE) or trimethylolpropane (TMP), or a combination of any two or more of the above materials.

[0012] As an optional structure of the temperature control device of the present invention, the phase change material layer covering the outward surfaces of the first substrate and the second substrate is made of the same phase change material or different phase change materials.

[0013] As an optional structure of the temperature control device of the present invention, the first substrate and the second substrate are made of polyimide flexible material, or are made of aluminum oxide or aluminum nitride ceramic rigid material.

[0014] As an optional structure of the temperature control device of the present invention, the N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit adopt Bi 2 Te 3 MgSi 2 Mg 3 Sb 2 、GeSi、CoSb 3 Or made of PbTe material; or made of half-hesuler or organic thermoelectric material.

[0015] As an optional structure of the temperature control device of the present invention, the dimensions of the N-type and P-type semiconductor thermoelectric units are 0.1-5 mm in length, 0.1-5 mm in width, and 0.05-5 mm in height.

[0016] The present invention also provides a method for preparing the temperature control device, comprising the following steps:

[0017] Cutting the N-type semiconductor thermoelectric material sheet and the P-type semiconductor thermoelectric material sheet into sizes to form thermoelectric units of certain specifications;

[0018] Preparing a patterned first electrode and a second electrode on a surface of the first substrate and the second substrate;

[0019] Placing a grid having a plurality of small holes corresponding to the first electrode on the surface of the first substrate having the second electrode, and then arranging a plurality of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units in the correspondingly arranged grid according to the design circuit rules that can realize the adaptive temperature sensing function, and making one end surface of each of the N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit correspondingly connected to the first electrode and fixed on the first substrate, and then removing the grid;

[0020] Connecting the second electrode on the second substrate to the other end surfaces of the plurality of N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units on the first substrate, so that the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units form the regularly arranged structure of the designed circuit and are sandwiched between the first substrate and the second substrate;

[0021] The phase change material is coated on the first substrate or the second substrate, and dried and solidified to form a phase change material layer.

[0022] As an optional step in the preparation method of the temperature control device of the present invention, after the phase change material is dried and solidified, the packaging material can be covered on the outer layer of the phase change material and the two sides of the combined phase change material layer, the first substrate, the thermoelectric array and the second substrate.

[0023] As an optional step in the method for preparing the temperature control device of the present invention, each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units is connected and fixed to the first substrate and the second substrate by welding.

[0024] As an optional step in the preparation method of the temperature control device of the present invention, in the step of fixing each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units to the first substrate and the second substrate, a grid is covered on the first substrate, and solder is dripped on the first electrode in the small holes of the grid, and then the N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit are placed in the grid, heated to 170°C-180°C for welding, and the grid is removed after cooling; and then the grid is covered on the second substrate, solder is dripped on the second electrode, and the first electrode is displaced relative to the second electrode and then welded to each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric unit.

[0025] The temperature control device provided by the present invention is composed of a substrate, a thermoelectric array and a phase change material heat storage module, wherein the thermoelectric array is composed of smaller sheet-shaped thermoelectric material units arranged in a regular circuit. The thermal stress generated by temperature change is small, and there is no complex overall processing, which simplifies the processing and preparation process of the device and greatly improves the stability of the device. When the sensing surface of the target object (such as electronic skin or other target object) senses a high temperature, the heat can be collected to the phase change material layer, and when the sensing surface of the target object senses a low temperature, the heat collection phase change layer can release heat. That is, when the temperature changes, the phase change can be used to store heat or release latent heat, and the temperature difference can be used to generate electricity and store energy, convert heat into electrical energy, buffer and adjust the temperature change, and the current direction can be used to achieve cooling and heating, thereby realizing the transformation of the thermoelectric array energy storage, heating, and cooling function modes. The present invention can use both rigid substrates and flexible substrates, and can preform various required shapes according to the shape of the target surface to meet the needs of industrialization. It can also be bent or deformed instantly according to the needs of the target object, and has a good combination with the target object, which is convenient for the use of target surfaces of various forms. At the same time, as a carrier of the thermoelectric array, it can also effectively protect the thermoelectric array, prevent pollution and mechanical damage during the working process, and extend the service life of the device. Furthermore, the present application can also be packaged through the packaging layer to effectively protect the substrate, thermoelectric array and phase change material heat storage module. When using flexible polydimethylsiloxane PDMS packaging, the entire device can also have flexible characteristics to be suitable for applications of various complex shapes.

[0026] The temperature control device manufactured by the preparation method of the present invention has a high degree of compatibility with the existing device preparation process, does not require complicated processing equipment and molds, has a simple production process, a short time, low cost, is easy to implement, has small thermal processing stress, can better guarantee the mechanical properties of each component, and is easy to improve and innovate the existing processing technology, and has a very high promotion value. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0028] Figure 1 A schematic diagram of a first structural embodiment of a temperature control device provided by the present invention;

[0029] Figure 2 A schematic diagram of a second structural embodiment of a temperature control device provided by the present invention;

[0030] Figure 3 A schematic diagram of a third structural embodiment of the temperature control device provided by the present invention;

[0031] Figure 4 This is a comparison diagram of the temperature change between the device of the present invention and a device without phase change. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0033] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element at the same time. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.

[0034] It should also be noted that the directional terms such as "length direction", "width direction", "up", "down", "inside", "outside", "one surface (end) face" or "the other surface (end) face" in the embodiments of the present invention are only relative concepts or are referenced to the normal use state of the product, or are referenced based on the positions shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be considered to be restrictive.

[0035] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0036] The structural embodiments of the present invention are further described in detail below in conjunction with the accompanying drawings.

[0037] Embodiment 1:

[0038] See also Figure 1The present invention provides a structure of a temperature control device embodiment, comprising a first substrate 1, a second substrate 3 and a thermoelectric array 5, wherein the thermoelectric array 5 comprises a plurality of N-type semiconductor thermoelectric units 51 and P-type semiconductor thermoelectric units 52 of uniform specifications and sizes formed by cutting thermoelectric material sheets, wherein the N-type semiconductor thermoelectric units 51 and the P-type semiconductor thermoelectric units 52 can be arranged in an interlaced manner through gaps 53 according to a designed circuit, and after being arranged, they are combined to form a thermoelectric array 5, and a first end face 54 and a second end face 55 opposite to each other are formed along the length or width direction thereof; the first substrate 1 adopts a flexible substrate, and a polyimide flexible material can be selected, wherein a surface 11 thereof has a plurality of formation areas, and a plurality of first electrodes 2 with a certain interval can be formed in a patterned regional layout, and each of the first electrodes 2 is adapted to the arrangement mode of the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52, and is slightly larger than the size of the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52. After the first electrode 2 is fixed to the first substrate 1, it has an outward surface 21, which is aligned and connected with the first end surface 54 on the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52, that is, the arranged N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 are respectively attached and fixed on the surface 21 of each first electrode 2. At the same time, a model base (not shown) with the same shape as the surface of the target object is set, and then the sensing surface 12 (the surface without the first electrode 2) on the first substrate 1 that can be matched with the surface of the target object is attached and fixed to the outer surface of the model base. Since the first substrate 1 has plastic flexibility, the sensing surface 12 of the first substrate 1 can be preformed into a shape that matches the surface of the target object. Accordingly, the first substrate 1 carrying multiple N-type semiconductor thermoelectric units 51 and P-type semiconductor thermoelectric units 52 also forms a shape consistent with the surface of the target object at the same time. Meanwhile, the second substrate 3 also adopts a flexible substrate, and can also be made of polyimide flexible material, and has a plurality of formation areas on its surface 31, which can form a plurality of second electrodes 4 with a certain interval in a patterned regional layout, so as to be connected to the second end face 55 of the thermoelectric array 5. Similarly, each second electrode 4 is consistent with the arrangement of the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52, and is slightly larger than the size of the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52, but is offset relative to the first electrode 2. When connected, the surface 41 of the second electrode 4 opposite to the thermoelectric array 5 is aligned and fixedly connected with the second end face 55 on the thermoelectric array 5.Since the second substrate 3 is also plastically flexible, after being connected to the thermoelectric array 5, it also forms a shape consistent with the first substrate 1, and since the second electrode 4 is staggered relative to the first electrode 2, an electrically series and thermally parallel connection structure can be formed between each N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52, so that the first substrate 1 and the second substrate 3 sandwiched with the thermoelectric array 5 of the present invention are formed into a structure that can adapt to the surface shape of the target object.

[0039] It should be noted that in the above description, the N-type semiconductor thermoelectric units 51 and the P-type semiconductor thermoelectric units 52 in the thermoelectric array 5, which are arranged in an interlaced manner through gaps 53 according to the designed circuit, form an electrically series and thermally parallel connection structure. This is only an embodiment of the thermoelectric array 5 of the present invention. In actual use, the N-type semiconductor thermoelectric units 51 and the P-type semiconductor thermoelectric units 52 can also be combined to form a series or parallel combination circuit structure as needed, or various arrangements can be made according to the requirements of the designed circuit, all of which fall within the protection scope of the thermoelectric array 5 of the present invention.

[0040] It can be understood that based on the plasticity of the first substrate 1 and the second substrate 3, the first substrate 1 and the second substrate 3 with the thermoelectric array 5 sandwiched therebetween can also be formed into other required shapes. It can be understood that the above-mentioned thermoelectric array can also be a flexible sensing array without a substrate, which can be bent into a desired shape at will, all of which are within the protection scope of the present invention.

[0041] See also Figure 1 After bending and forming, a phase change material is coated on the second substrate 3, so that a phase change material layer 6 is attached to the outward surface 32 of the second substrate 3. The phase change material can be one of neopentyl glycol (NPG), amino-2-methyl-1,3-propanediol (AMP), trimethylolethane (PG), trimethylolaminomethane (TAM), pentaerythritol (PE) or trimethylolpropane (TMP), or a combination of any two or more of the above materials. According to the energy storage and temperature control characteristics of the phase change material, when the external temperature changes, through the transformation of the internal structure, when the temperature rises, the phase change material stores heat; when the temperature drops, the phase change material releases heat. Therefore, the setting of the phase change material can effectively alleviate the change of the device temperature and realize the temperature regulation function. The open circuit voltage generated by the thermoelectric array is proportional to the temperature difference between the two ends. By adopting a comparative voltage control system through the thermoelectric array 5, the temperature control of the device module can be realized. When the surface temperature of the target object is high, the heat is collected to the phase change material heat collection module. When the surface temperature of the target object is low, the heat collection phase change layer releases heat.

[0042] From the structure of the temperature control device described above, it can be seen that the material of the thermoelectric array 5 of the present invention is a thermoelectric semiconductor pn material, which can generate voltage according to the Seebeck effect when there is a temperature difference between the two ends. The thermoelectric array made of thermoelectric materials can generate electricity using temperature difference. When an external load is connected, the voltage generated by the temperature difference can do work on the load, or the electric energy generated by the temperature difference can be stored in a battery, so that the energy transfer can be realized, that is, the temperature control function can be realized. The Peltier effect can also be used. When an electric current is applied, heat can be transferred from one end to the other end, thereby achieving the effect of cooling one end and heating the other end. The efficiency of transferring heat is proportional to the applied current. When an electric current is applied to the temperature sensing array made of thermoelectric materials, the effects of cooling and heating at both ends can be achieved. When the applied current is reversed, the corresponding heating and cooling surfaces are reversely converted. Therefore, the cooling or heating of the temperature control surface by electric regulation and the efficiency of temperature regulation can be achieved by adjusting the current size and direction of the current in the circuit connected to the temperature sensing array. That is, the voltage generated at both ends of the thermoelectric array is proportional to the applied temperature difference, and then according to the voltage value generated by the monitored thermoelectric device, the temperature difference value at both ends of the device can be conveniently obtained to realize the function of temperature monitoring. Since the thermoelectric array is composed of a plurality of smaller thermoelectric units connected in combination, it is only necessary to cut and process the thermoelectric material sheet into a uniform structural size, and there is no need to use complex thermoelectric array forming equipment or process the thermoelectric array into a shape that matches the target surface, which greatly simplifies the processing and preparation process of the device, and is low in cost. In addition, due to the simple structure of the thermoelectric unit, the thermal stress generated by temperature change is small, thereby greatly improving the stability of the device. Furthermore, due to the small size of the thermoelectric unit single chip, the arrangement and combination can be designed as needed, which facilitates the connection of the first substrate 1 and the second substrate 3, and is conducive to the molding of the first substrate 1 and the second substrate 3. At the same time, the first substrate 1 and the second substrate 3 are made of flexible materials, which are highly adaptable to the outer surface of the target surface, and can also be used as carriers of the thermoelectric array to effectively fix the thermoelectric array, and can also effectively protect the thermoelectric array, prevent pollution and mechanical damage during the working process, and extend the service life of the device.

[0043] Furthermore, the device of the present invention combines the phase change material layer 6 with the thermoelectric touch sensor array 5 to generate more electrical energy. Since the temperature nodes of the phase change heat storage and latent heat release of the phase change material are not synchronized, that is, the temperature of latent heat release is lower than the temperature when heat is stored. Utilizing this effect, the thermoelectric touch sensor array 5 can generate more electrical energy when the temperature changes, that is, when the external temperature rises, a temperature difference is generated on both sides of the thermoelectric touch sensor array 5 to generate electricity, and the phase change material stores heat; when the temperature drops, the phase change material releases latent heat, thereby generating a temperature difference at both ends again, allowing the device to generate electricity again. Therefore, the two ends of the thermoelectric array can be connected to a voltage comparison circuit and a battery to form a circuit system (refer to the conventional circuit in the prior art), so that when a certain temperature point is exceeded or lowered, the circuit automatically switches or the current is diverted. That is, the voltage generated by the thermoelectric touch sensor array 5 is proportional to the temperature difference. Therefore, the present invention uses the voltage at both ends of the thermoelectric touch sensor array to connect with the voltage comparison circuit. When the temperature difference at both ends of the thermoelectric touch sensor array exceeds or falls below the set value, the circuit automatically switches between cooling and heating functions, and can self-feedback to adjust the temperature and realize the switch function. This mode can be applied to actual scenarios. For example, when outdoors, due to sunlight or high outdoor temperature, the phase change material stores heat and the device generates electricity; when returning indoors, the temperature drops, and the temperature difference generated by the latent heat released by the phase change material can be used to generate electricity again, thereby realizing the transformation of the thermoelectric array energy storage, heating, and cooling function modes, so that the target object can realize the regulation function according to its own temperature feedback in a temperature-changing environment.

[0044] Moreover, since the invention has a high degree of integration with the target object, it is convenient to use various forms of target objects, and can significantly improve the heat exchange efficiency between the thermoelectric device and the target object. Since the thermoelectric array has a simple arrangement structure, it is highly compatible with the existing device preparation process and is easy to improve and innovate the existing processing technology.

[0045] Please see again Figure 1 , Embodiment 1 of the present invention further includes a packaging layer 7, which is coated on the outward surface of the phase change material layer 6 and covers both sides of the combined thermoelectric array 5, the first substrate 1 and the second substrate 3, and covers the left side 9 and the right side 8 of the combination of the above three as shown in the figure. The packaging layer 7 can be encapsulated by polydimethylsiloxane PDMS with soft elasticity to form the overall structure of the device. The setting of the packaging layer 7 can effectively protect the thermoelectric array 5, the first substrate 1 and the second substrate 3, and can also avoid cracking caused by the flexible deformation of the first substrate 1 and the second substrate 3. Since the first substrate 1, the second substrate 3, the phase change material layer 6, and the packaging layer 7 are all flexible, the composed device can be flexible as a whole and can be applied to various complex curved surfaces.

[0046] In the structure of the first embodiment of the present invention, the first substrate 1 and the second substrate 3 are both made of polyimide flexible material, which is bendable, has good thermoplasticity, does not deform at high temperatures above 400°C, and has high insulation performance, and is very suitable for making flexible substrates for thermoelectric devices. It can be understood that the first substrate 1 and the second substrate 3 can also be made of other flexible materials, as long as they can well carry the thermoelectric array 5 and have good thermoplasticity and thermal conductivity, they are all within the protection scope of the present invention.

[0047] In the structure of the first embodiment of the present invention, the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 are both made of one of the following thermoelectric materials: Bi 2 Te 3 MgSi 2 Mg 3 Sb 2 、GeSi、CoSb 3 Or PbTe material; or half-hesuler or organic thermoelectric material. The above materials are made into sheet components, and then cut into sheet thermoelectric units with a length of 0.1-5mm, a width of 0.1-5mm, and a height of 0.05-5mm. The cut N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 are the simplest sheet structures with small specifications and dimensions, which are easy to process. Even when arranged on the curved first substrate 1 and the second substrate 3, a smaller curvature radius can be achieved, which can be applied to various heat source dimensions.

[0048] In the structure of the first embodiment of the present invention, the first end face 54 connected to the first electrode 2 and the second end face 55 connected to the second electrode 4 of the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 are provided with an isolation layer (not shown). The isolation layer can be a metal layer of any single substance of Ni, Co, Fe, In, Pt, Ag, Au, Ti or Zn, or an alloy layer composed of two or more of the above metals, preferably a nickel layer, which can be processed by spraying, electroplating or magnetron sputtering. Nickel metal has high thermal conductivity and electrical conductivity, stable properties, is conducive to heat transfer, and the thermal expansion coefficient of the thermoelectric material is matched. It is also suitable for dripping solder, which is convenient for fixed connection with the first electrode 2 and the second electrode 4. It can also effectively protect the thermoelectric array 5 and prevent the solder from diffusing into the thermoelectric array 5 at high temperature. It can be understood that the isolation layer is not limited to those listed above, and can also be formed in other ways, as long as it can facilitate the connection between the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 and the first electrode 2 and the second electrode 4, can match the thermal expansion coefficient of the thermoelectric material and facilitate electrical and thermal conduction.

[0049] The present invention also provides a method for preparing the temperature control device embodiment, comprising the following steps:

[0050] S1 selects n / p type Bi 2 Te 3 MgSi 2 Mg 3 Sb 2 、GeSi、CoSb 3 Or a PbTe material sheet; or a half-hesuler or organic thermoelectric material sheet, which is then cut into sheet-shaped N-type semiconductor thermoelectric units 51 and P-type semiconductor thermoelectric units 52 according to the dimensions of the target object in accordance with length 0.1-5mm, width 0.1-5mm, and height 0.05-5mm.

[0051] This step can be performed after electroplating, and a 0.04-0.6 mm thick nickel layer can be plated on the thermoelectric material sheet, and then cut into thermoelectric units.

[0052] S2 designs the corresponding size of the first substrate 1 or the second substrate 3 according to the size of the thermoelectric array 5 and the size of the target object, and patterns the first electrode 2 and the second electrode 4 on the first substrate 1 and the second substrate 3 .

[0053] In this step, the size of the first electrode 2 and the second electrode 4 should be slightly larger than the size of the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 to ensure complete coverage. At the same time, the patterned first electrode 2 and the second electrode 4 on the first substrate 1 and the second substrate 3 need to be arranged according to the design circuit rules so that they can be adapted to the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 when they are fixed.

[0054] In specific implementation, if the device structure is a curved structure as shown in the figure (the illustrated embodiment of the present invention selects the first substrate 1 to contact the target object), the cross-sectional lengths of the first electrode 2 and the second electrode 4 can be set to be the same, and their length dimensions remain unchanged. The corresponding deformation angle and length dimension of the corresponding first substrate 1 can be calculated according to the bending radius of the target object, and then the length dimension of the second substrate 3 can be calculated according to the thickness and gap of the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52.

[0055] S3: According to the size of the first substrate 1 and the arrangement size of the first electrode 2, a stainless steel porous steel mesh is processed, and then the mesh is covered on the surface 21 of the first electrode 2 of the first substrate 1, and a connecting material (Sn42 / Bi58 solder with a melting point of 138°C is selected in this embodiment) is dripped into each small hole on the first electrode 2, and then a plurality of N-type semiconductor thermoelectric units 51 and P-type semiconductor thermoelectric units 52 are arranged in the above-mentioned mesh according to the designed circuit, and the first end face 54 of each N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 is made to fit the first electrode 2, and the infrared heater is used to heat to 170°C-180°C for welding, so that each N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 are connected to the surface 21 of the first electrode 2. When each N-type semiconductor thermoelectric unit 51 and P-type semiconductor thermoelectric unit 52 is firmly fixed on the first substrate 1, the mesh is removed.

[0056] This step mainly connects the first substrate 1 with the first end faces 54 of the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 by reflow soldering. It can be understood that the connection method of the first substrate 1 with the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 is not limited to welding, as long as the first substrate 1 can be reliably connected with the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 and the electrical and thermal transfer performance can be guaranteed.

[0057] S4 makes a model base that is identical to the outer surface of the target object, and then fits the other surface 12 of the first substrate 1 that does not contain the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 to the surface on the model base that is identical to the outer surface of the target object, and bends the first substrate 1 through high-temperature tape or glue bonding to preform it into the same shape as the fitting surface of the model base.

[0058] In this step, any connection method between the two is acceptable as long as it can ensure that the first substrate 1 can be reliably attached to the mold base and preformed without rebounding.

[0059] S5 covers the grid on the second substrate 3, then drips Sn42 / Bi58 solder with a melting point of 138°C on the second electrode 4, then bends the second substrate 3 so that the second electrode 4 fits the second end faces 55 of the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52, and then uses an infrared heater to heat the solder to 170°C-180°C, so that the second substrate 3 is welded and connected to the second end faces 55 of each N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52. After connection, the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 are combined and arranged and sandwiched between the second substrate 3 and the first substrate 1, and connected according to the designed circuit to form a thermoelectric array 5.

[0060] Similarly, in this step, the connection method between the second substrate 3 and the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 is not limited to welding, as long as the second substrate 3 and the N-type semiconductor thermoelectric unit 51 and the P-type semiconductor thermoelectric unit 52 can be reliably connected and the electrical and heat transfer performance can be guaranteed.

[0061] S6 After the second substrate 3 has formed a shape consistent with the first substrate 1 , the model base is removed, and the thermoelectric array 5 is stably sandwiched between the curved first substrate 1 and the second substrate 3 .

[0062] S7 coating phase change material: neopentyl glycol (NPG) whose phase change temperature is close to room temperature is mixed with 5% citric acid aqueous solution to form a gel, which is then coated on the outward surface of the second substrate 3 and dried to form a phase change material layer 6.

[0063] S8. Use polydimethylsiloxane (PDMS) for encapsulation. Dow Corning DC184 can be used. After the main agent (silicone elastomer) and the hardener (silicone elastomer curing agent) are mixed evenly at a mass ratio of 10:1, the bubbles in the mixed liquid are removed by vacuuming, and then poured on the outer layer covered with the phase change material layer 6 and the combined phase change material layer 6, the first substrate 1, the thermoelectric array 5, and the left side 8 and right side 9 of the second substrate 3, heated at 70-80°C for 1 hour, cured and formed, and thus a temperature control device is prepared.

[0064] In this step, the device structure is integrated by using flexible polydimethylsiloxane encapsulation. Since each part is flexible, the device as a whole is flexible and can be applied to various complex curved surfaces.

[0065] It should be noted that this embodiment is a preparation process of a temperature control device for a preformed arc segment. In actual use, multiple temperature control devices can be selected and set in combination according to the structure of the target object, which is very convenient. And because the thermoelectric array 5 of the present invention is composed of sheet-like thermoelectric units with smaller size specifications, various shapes can be formed after combination. Therefore, the shape of the temperature control device of the present invention is not limited to the arc shape described in this embodiment, but can also be a right angle, polygon, cone or other special shape, etc. It can not only be preformed into the shape required by the target object during production and processing according to needs to achieve the needs of industrial mass production, but also can be instantly formed and combined into various shapes according to on-site needs, so it has a very wide range of use, can meet the needs of various target objects, and has a very important significance for the development of artificial intelligence technology.

[0066] Figure 4The temperature change diagram of this embodiment compared with the device without phase change material is shown. Under external light as the heat source, two groups of devices with and without phase change material coating are used to measure the temperature between the thermoelectric array and the phase change material, and the temperature of the upper and lower surfaces of the entire device. Among them, T 上(TE+PCM) , T 中(TE+PCM) , T 下(TE+PCM) Respectively represent the upper surface temperature of the packaged device of the present invention, the temperature between the phase change material and the thermoelectric array, and the temperature of the lower surface of the device; t 上(TE) ,t 中(TE) ,t 下(TE) They represent the upper surface temperature of the reference device package, the temperature between the PMMS packaging layer and the thermoelectric array, and the temperature of the lower surface of the device, respectively.

[0067] Depend on Figure 4 By comparison and analysis, it can be clearly observed that when the thermoelectric array covered with a phase change material layer of the present invention outputs electrical energy to the outside, the temperature at which the device as a whole reaches equilibrium is lower, and it takes longer to reach the equilibrium temperature; and when the temperature rises, near the phase change point of the phase change material, it can be clearly observed that the slope of the temperature curve slows down and the heating rate decreases; when the temperature drops, the temperature rises significantly due to the release of the latent heat of the phase change. Therefore, when the temperature rises, the phase change material stores heat, and the thermoelectric array converts the heat into electrical energy, thereby effectively slowing down the temperature rise; when the temperature drops, the latent heat of the phase change is released, and the temperature drop can be effectively curbed. Therefore, the device of the present invention can effectively adapt to the changes in touch and control temperature.

[0068] Embodiment 2:

[0069] See also Figure 2 As the structure of the second embodiment of the temperature control device of the present application, different from the first embodiment, the first substrate 1 and the second substrate 3 are made of rigid materials such as aluminum oxide or aluminum nitride ceramics, and a thermoelectric array 5 is sandwiched between the first substrate 1 and the second substrate 3, which can directly form a planar shape similar to a "sandwich" without the need for bending.

[0070] Furthermore, the phase change material layer 6 in the structure shown in the diagram of the second embodiment can be covered on the outward surface of the first substrate 1. By connecting the voltage at both ends of the thermoelectric touch sensor array to the voltage comparison circuit, when the temperature difference at both ends of the thermoelectric touch sensor array exceeds or falls below the set value, the circuit can automatically switch between cooling and heating functions, and can self-feedback to adjust the temperature and realize the switch function. It can be understood that since the present embodiment is a planar structure, the phase change material layer 6 can be covered on the outward surface of the first substrate 1 shown in the diagram, or on the outward surface of the second substrate 3, or on the outward surfaces of the first substrate 1 and the second substrate 3, respectively. Similarly, an encapsulation layer 7 is provided on the phase change material layer 6 and on the left side 8 and right side 9 of the thermoelectric array 5, the first substrate 1 and the second substrate 3, and a flexible polydimethylsiloxane PDMS encapsulation can be used to encapsulate and form the overall structure of the device. Of course, other encapsulation materials can also be used to encapsulate and form the overall structure of the device.

[0071] The other structures and functions of the second embodiment are the same as those of the first embodiment and will not be described again here.

[0072] Embodiment three:

[0073] See also Figure 3 As the structure of the third embodiment of the temperature control device of the present application, the difference from the first embodiment is that the present embodiment respectively sets a phase change material layer 10 on the outward surface of the first substrate 1 and sets a phase change material layer 6 on the outward surface of the second substrate 3, that is, the outward surfaces of the first substrate 1 and the second substrate 3 are respectively covered with phase change materials. Furthermore, when the phase change material is covered on the outward surfaces of the first substrate 1 and the second substrate 3, the same phase change material can be used or different phase change materials can be used as needed.

[0074] Similarly, a packaging layer 7 is provided on the phase change material layer 6, 10 and the left side 8 and right side 9 of the thermoelectric array 5, the first substrate 1 and the second substrate 3, and the entire device is coated with the packaging material to form an integral structure. This structure can achieve a better temperature control effect and a faster and higher efficiency of temperature regulation.

[0075] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions or improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing a temperature control device, characterized in that: include: Thermoelectric array, including a plurality of N-type semiconductor thermoelectric units and P-type semiconductor thermoelectric units arranged according to the design circuit rules to realize the adaptive temperature sensing function; A first substrate, wherein one surface thereof has a first electrode corresponding to each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units, and the first electrode is connected to one end surface of each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units correspondingly; The N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit are made of Bi2Te3, MgSi2, Mg3Sb2, GeSi, PbTe or CoSb3 materials; or are made of half-hesuler or organic thermoelectric materials; the sensing surface on the first substrate that is adapted to the surface of the target object is used to fit and fix with the outer surface of the model base; each of the first electrodes is adapted to the arrangement of the N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit, and is larger than the size of the N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit; A second substrate, wherein one surface of the substrate has a second electrode corresponding to each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units, and the second electrode is connected to the other end surface of each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units so that each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units are sandwiched between the first substrate and the second substrate and constitute the regular arrangement structure of the designed circuit; the first substrate and the second substrate are both flexible substrates, the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units are arranged in an interlaced manner through gaps according to the designed circuit, and the second electrode is staggered relative to the first electrode; the first end surface of the N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit connected to the first electrode and the second end surface connected to the second electrode are provided with an isolation layer, the isolation layer is a nickel layer with a thickness of 0.04-0.6 mm, and the first substrate and the second substrate are made of polyimide flexible material; A phase change material layer, used to realize phase change heat storage and latent heat release near the phase change temperature point, and covering the outward surface of the first substrate and / or the second substrate; The dimensions of the N-type and P-type semiconductor thermoelectric units are 0.1-5 mm in length, 0.1-5 mm in width, and 0.05-5 mm in height; A packaging layer, the packaging layer is covered on the phase change material layer and covers both sides of the combined thermoelectric array, the first substrate and the second substrate, and the packaging layer is flexible; The first substrate, the second substrate, the phase change material layer and the packaging layer are all flexible; The method for preparing the temperature control device comprises the following steps: A 0.04-0.6 mm thick nickel layer is plated on the thermoelectric material sheet, and the N-type semiconductor thermoelectric material sheet and the P-type semiconductor thermoelectric material sheet are cut according to size to form thermoelectric units of certain specifications; Preparing patterned first and second electrodes on a surface of the first substrate and the second substrate; A grid having a plurality of small holes corresponding to the first electrode is placed on the surface of the first substrate having the second electrode, and then a plurality of N-type semiconductor thermoelectric units and P-type semiconductor thermoelectric units are arranged and placed in the correspondingly arranged grid according to the design circuit rules that can realize the adaptive temperature sensing function, and one end face of each of the N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit is connected to the first electrode correspondingly and fixed on the first substrate, and then the grid is removed; in the step of fixing each of the N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit to the first substrate and the second substrate, a grid is covered on the first substrate, and solder is dripped on the first electrode in the small holes of the grid, and then the The N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit are placed in the grid, heated to 170°C-180°C for welding, and the grid is removed after cooling; then the grid is covered on the second substrate, solder is dripped on the second electrode, and the first electrode is displaced relative to the second electrode and then welded with each of the N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit; first, the cross-sectional lengths of the first electrode and the second electrode are set to be the same, and their length dimensions remain unchanged. The corresponding deformation angle and length dimension of the first substrate can be calculated according to the bending radius of the target object, and then the length dimension of the second substrate is calculated according to the thickness and gap of the N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit; Making a model base identical to the outer surface of the target object, and then laminating the other surface of the first substrate that does not contain the N-type semiconductor thermoelectric unit and the P-type semiconductor thermoelectric unit with the surface of the model base identical to the outer surface of the target object, bending the first substrate and preforming it into the same shape as the laminating surface of the model base; Connecting the second electrode on the second substrate to the other end surfaces of the plurality of N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units on the first substrate, so that the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units form the regularly arranged structure of the designed circuit and are sandwiched between the first substrate and the second substrate; Mixing neopentyl glycol (NPG) whose phase change temperature is close to room temperature with a 5% citric acid aqueous solution into a gel, coating the gel on the first substrate or / and the second substrate, and drying and curing the gel to form a phase change material layer; Polydimethylsiloxane (PDMS) is used for packaging. The main agent and the hardener are evenly mixed in a mass ratio of 10:1, and the bubbles in the mixed liquid are removed by vacuum. The mixed liquid is poured on the outer layer covered with the phase change material layer and the left and right sides of the combined phase change material layer, the first substrate, the thermoelectric array and the second substrate. The mixture is heated at 70-80°C for 1 hour and cured to form a temperature control device.

2. The method for preparing a temperature control device according to claim 1, characterized in that The phase change material is one of neopentyl glycol (NPG), amino-2-methyl-1,3-propanediol (AMP), trimethylolethane (PG), trimethylolaminomethane (TAM), pentaerythritol (PE) or trimethylolpropane (TMP), or a combination of any two or more of the above materials.

3. The method for preparing a temperature control device according to claim 1 or 2, characterized in that: The phase change material layers covering the outward surfaces of the first substrate and the second substrate are made of the same phase change material or different phase change materials.

4. The method for preparing a temperature control device according to claim 1, characterized in that: After the phase change material is dried and solidified, the packaging material is covered on the outer surface of the phase change material and both sides of the combined phase change material layer, the first substrate, the thermoelectric array and the second substrate.

5. The method for preparing a temperature control device according to claim 4, characterized in that: Each of the N-type semiconductor thermoelectric units and the P-type semiconductor thermoelectric units is connected and fixed to the first substrate and the second substrate by welding.

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