Substrate processing device, substrate processing method and storage medium

Abstract

The present invention provides a substrate processing device that is effective in improving the uniformity of ashing treatment of an organic film formed on the surface of a substrate. The substrate processing device (1) includes: a rotating holding part (30) that holds a chip (W) and rotates the chip, wherein the chip has an organic film on its surface (Wa); a light irradiation part (40) that irradiates light for ashing the organic film onto the surface of the chip; an airflow forming part that forms an airflow of oxygen-containing gas so that the airflow can pass between the chip and the light irradiation part; an irradiation control part (114) that controls the light irradiation part so that the light is irradiated onto the surface of the chip in a state in which the airflow forming part forms the airflow between the chip and the light irradiation part; and a rotation control part (115) that controls the rotating holding part so that the chip is rotated in a state in which the airflow forming part forms the airflow between the chip and the light irradiation part and the light irradiation part irradiates the light onto the surface of the chip.

Description

Technical Field

[0001] The present invention relates to a substrate processing device, a substrate processing method and a storage medium. Background Art

[0002] Patent Document 1 discloses a substrate processing method in which a substrate having a film to be processed is placed in a processing chamber containing an oxygen atmosphere at a gas flow rate of 10 cm / sec or less, and ultraviolet rays are irradiated on the substrate to remove a portion of the film to be processed.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2016-27617 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that are effective in improving the uniformity of an ashing process for an organic film formed on a surface of a substrate.

[0008] Technical solutions to technical problems

[0009] A substrate processing device according to one aspect of the present invention includes: a rotating holding portion for holding a substrate and rotating the substrate, the substrate having an organic coating on its surface; a light irradiation portion for irradiating the surface of the substrate held by the rotating holding portion with light for ashing the organic coating; an airflow forming portion for forming an airflow of oxygen-containing gas by allowing the airflow to pass between the substrate held by the rotating holding portion and the light irradiation portion; an irradiation control portion for controlling the light irradiation portion so that the surface of the substrate is irradiated with light for ashing while the airflow forming portion forms an airflow of oxygen-containing gas between the substrate and the light irradiation portion; and a rotation control portion for controlling the rotating holding portion so that the substrate is rotated while the airflow forming portion forms an airflow of oxygen-containing gas between the substrate and the light irradiation portion and the light irradiation portion irradiates the surface of the substrate with light for ashing.

[0010] According to this substrate processing apparatus, while the airflow forming section forms an oxygen-containing gas flow between the substrate and the light irradiation section, the surface of the substrate is irradiated with ashing light. Therefore, during irradiation with the ashing light, oxygen is continuously supplied between the substrate and the light irradiation section, making it easy to achieve the desired ashing result. Furthermore, while the airflow forming section forms an oxygen-containing gas flow between the substrate and the light irradiation section, and the light irradiation section irradiates the surface of the substrate with the ashing light, the substrate is rotated. Therefore, it is possible to suppress ashing spots caused by the airflow. This effectively improves ashing uniformity.

[0011] The substrate processing device may also include: a hot plate, which is arranged on the rotating holding portion in a manner opposite to the back side of the substrate and can rotate together with the substrate; and a heating control portion, which controls the hot plate so as to adjust the temperature distribution while reducing the difference in ashing progress between areas arranged in the radial direction of the substrate.

[0012] The structure in which the substrate is rotated while the airflow forming unit forms an oxygen-containing gas flow between the substrate and the light irradiation unit and the light irradiation unit irradiates the substrate surface with light for ashing is particularly effective in improving ashing uniformity in the circumferential direction of the substrate. Furthermore, the structure in which the temperature distribution is adjusted for each radially arranged region of the substrate further improves ashing uniformity in the radial direction of the substrate.

[0013] The irradiation control unit may further control the light irradiation unit to adjust the irradiation amount of the ashing light while reducing the difference in ashing progress between regions arranged in the radial direction of the substrate. In this case, by adjusting the irradiation amount of the ashing light for each region arranged in the radial direction of the substrate, the uniformity of ashing in the radial direction of the substrate can be improved.

[0014] The substrate processing apparatus may also include: a distance changing unit configured to change the distance between the substrate held by the rotating holding unit and the light irradiation unit; and a distance change control unit configured to control the distance changing unit to change the distance between the substrate and the light irradiation unit, so that, while a flow of oxygen-containing gas is formed between the substrate and the light irradiation unit, ashing light can be irradiated under various conditions with different distances between the substrate and the light irradiation unit. In this case, by changing the distance between the substrate and the light irradiation unit, the distribution of oxygen concentration in the direction of the flow can be changed, thereby improving the uniformity of ashing in the direction of the flow.

[0015] The substrate processing apparatus may also include an oxygen addition unit for adding oxygen to the oxygen-containing gas; and an oxygen addition control unit for controlling the oxygen addition unit so that, while the airflow forming unit forms an airflow of the oxygen-containing gas between the substrate and the light irradiation unit and the light irradiation unit irradiates the surface of the substrate, oxygen is added to the oxygen-containing gas before it enters the space between the substrate and the light irradiation unit. In this case, the addition of oxygen can suppress oxygen deficiency on the downstream side of the airflow, thereby improving the uniformity of ashing along the airflow direction. Therefore, for example, if ashing progresses less rapidly in the central portion than in the peripheral portion, the addition of oxygen can reduce this difference.

[0016] The oxygen addition unit may also include a gas supply port for supplying oxygen, the supply port opening toward the center between the substrate and the light irradiation unit. In this case, the flow rate of the oxygen addition gas is increased to further promote the addition of oxygen to the downstream side of the gas flow.

[0017] While the airflow forming unit forms an airflow of the oxygen-containing gas between the substrate and the light irradiation unit, the light irradiation unit also irradiates the oxygen-containing gas with light for ashing before it enters the space between the substrate and the light irradiation unit. In this case, by activating oxygen in the oxygen-containing gas before it enters the space between the substrate and the light irradiation unit, a shortage of active oxygen immediately after the oxygen-containing gas enters the space can be suppressed, thereby improving ashing uniformity along the airflow direction.

[0018] The rotation control unit may also control the rotation holding unit so that the rotation speed of the substrate decreases as time passes from the time when the light for ashing starts to be irradiated onto the substrate. The rate of progress of ashing under the same conditions (hereinafter referred to as "the rate of progress of ashing") tends to decrease as time passes. When the rate of progress of ashing changes during the rotation of the substrate, the effect of improving uniformity achieved by the rotation of the substrate is reduced. In contrast, by reducing the rotation speed of the substrate as time passes from the time when the light for ashing starts to be irradiated onto the substrate, the effect of the decrease in the rate of progress of ashing can be suppressed, thereby reducing the above-mentioned effect of suppressing the improvement in uniformity.

[0019] The irradiation control unit may also control the light irradiation unit so as to increase the amount of irradiation of the ashing light as time passes from the start of irradiation of the substrate with the ashing light. In this case, by increasing the amount of irradiation of the ashing light as time passes from the start of irradiation of the substrate with the ashing light, the effect of a decrease in the progress of ashing can be suppressed, thereby suppressing the reduction in the effect of improving uniformity.

[0020] The rotation control unit may also control the rotation maintaining unit so that the substrate rotates two or more times while the airflow forming unit forms an oxygen-containing gas flow between the substrate and the light irradiation unit, and the light irradiation unit irradiates the surface of the substrate with light for ashing. In this case, the decrease in the ashing rate during one rotation of the substrate is minimized. This can thereby suppress the reduction in the uniformity-enhancing effect.

[0021] Another aspect of the present invention is a substrate processing method, comprising: a step of forming an oxygen-containing gas flow in a manner that enables the gas flow to pass between a substrate having an organic coating on its surface and a light irradiation portion that irradiates light for ashing; a step of irradiating the surface of the substrate with light for ashing from the light irradiation portion while an oxygen-containing gas flow is formed between the substrate and the light irradiation portion; and a step of rotating the substrate while an oxygen-containing gas flow is formed between the substrate and the light irradiation portion and the light irradiation portion irradiates light for ashing toward the surface of the substrate.

[0022] The substrate processing method may also include: changing the distance between the substrate and the light irradiation part to form an oxygen-containing gas flow between the substrate and the light irradiation part, so that the light for ashing can be irradiated under multiple conditions where the distance between the substrate and the light irradiation part is different from each other.

[0023] A storage medium according to another aspect of the present invention is a computer-readable storage medium storing a program for causing an apparatus to execute the substrate processing method.

[0024] Effects of the Invention

[0025] According to the present invention, it is possible to provide a substrate processing apparatus and a substrate processing method that are effective in improving the uniformity of an ashing process performed on an organic film formed on a surface of a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a perspective view schematically showing the structure of a substrate processing apparatus.

[0027] Figure 2 It is along Figure 1 Cross-sectional view along line II-II.

[0028] Figure 3 It is a cross-sectional view schematically showing the structure of an ashing unit.

[0029] Figure 4 It is a schematic plan view of a hot plate.

[0030] Figure 5 It is a schematic perspective view of the irradiation unit.

[0031] Figure 6 This is a block diagram showing the hardware configuration of the control unit.

[0032] Figure 7 This is a flowchart showing the processing procedure of the ashing unit.

[0033] Figure 8 It is a schematic diagram showing the state of the ashing unit when a wafer is loaded.

[0034] Figure 9 This is a flowchart showing the ashing process procedure.

[0035] Figure 10 It is a schematic diagram showing the state of the ashing unit when irradiated with ashing light.

[0036] Figure 11 This is a flowchart showing a modified example of the ashing process procedure.

[0037] Figure 12 This is a flowchart showing another modified example of the ashing process procedure.

[0038] Figure 13 This is a flowchart showing still another modified example of the ashing process procedure.

[0039] Figure 14 This is a flowchart showing still another modified example of the ashing process procedure.

[0040] Figure 15 It is a schematic diagram showing the state of the ashing unit when the distance between the wafer and the light irradiation section is changed.

[0041] Description of Reference Numerals

[0042] 1. Substrate processing device

[0043] 30 Rotation holding unit

[0044] 33 hot plate

[0045] 40 Light irradiation part

[0046] 50 air flow forming part

[0047] 70 Distance Change Unit

[0048] 80 Oxygen addition unit

[0049] 111 Heating Control Unit

[0050] 113 Distance Change Control Unit

[0051] 114 Irradiation Control Unit

[0052] 115 Rotation control unit

[0053] 116 Add Control Unit

[0054] W wafer (substrate)

[0055] surface

[0056] Wb back. DETAILED DESCRIPTION

[0057] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and repeated descriptions are omitted.

[0058] (Substrate processing device)

[0059] The substrate processing device 1 of this embodiment is a device for forming a protective film (organic film) on a substrate and smoothing the surface of the protective film by etching. The substrate to be processed is, for example, a semiconductor wafer W. The protective film is, for example, a so-called hard mask such as spin-on carbon (SOC). Figure 1 and 2As shown, the substrate processing apparatus 1 includes a carrier block 2 , a processing block 3 and a control unit 100 that are adjacent to each other.

[0060] The carrier block 2 is used to introduce and remove wafers W from the substrate processing apparatus 1. For example, the carrier block 2 can support multiple carriers 11 for wafers W and has a built-in transfer arm A1. The carriers 11 accommodate, for example, multiple circular wafers W. The transfer arm A1 removes wafers W from the carriers 11 and transfers them to the processing block 3. It then receives the wafers W from the processing block 3 and returns them to the carriers 11.

[0061] The processing block 3 has a plurality of liquid processing units U1, a plurality of ashing units U2, and a transfer arm A2 for transferring wafers W to these units. The liquid processing unit U1 supplies a processing liquid for forming a hard mask to the surface of the wafer W to form a coating (hereinafter referred to as "coating processing"). The ashing unit U2 performs a heat treatment for hard masking the above-mentioned coating and a process for smoothing the surface of the hard mask by etching (hereinafter referred to as "etching processing"). A rack unit U10 is provided on the side of the carrier block 2 in the processing block 3. The rack unit U10 is divided into a plurality of small chambers arranged in the vertical direction.

[0062] The control unit 100 controls the carrier block 2 and the processing block 3 to perform the coating process, heat treatment, and etching process on the wafer W. For example, the control unit 100 first controls the transfer arm A1 to transport the wafer W in the carrier 11 to the rack unit U10. Then, the control unit 100 controls the transfer arm A2 to transport the wafer W in the rack unit U10 to the liquid treatment unit U1, and controls the liquid treatment unit U1 to perform the coating process on the wafer W. Then, the control unit 100 controls the transfer arm A2 to transport the wafer W from the liquid treatment unit U1 to the ashing unit U2, and controls the ashing unit U2 to perform the heat treatment and etching process on the wafer W. Then, the control unit 100 controls the transfer arm A2 to transport the wafer W from the ashing unit U2 to the rack unit U10, and controls the transfer arm A1 to return the wafer W from the rack unit U10 to the carrier 11. Through the above, the coating process, heat treatment, and etching process of a wafer W are completed.

[0063] (Ashing unit)

[0064] Next, the ashing unit U2 is described in detail. Figure 3As shown, the ashing unit U2 includes: a rotating holding portion 30 that holds and rotates a wafer W having the aforementioned protective film on its surface Wa; a light irradiation portion 40 that irradiates light for ashing the protective film onto the surface Wa of the wafer W held by the rotating holding portion 30; and a gas flow formation portion 50 that forms a gas flow containing oxygen so that the gas flow can pass between the wafer W held by the rotating holding portion 30 and the light irradiation portion 40. More specifically, the ashing unit U2 includes a housing 20, a rotating holding portion 30, a light irradiation portion 40, a gas flow formation portion 50, a support portion 60, a distance changing portion 70, and an oxygen addition portion 80.

[0065] The housing 20 houses the various components of the ashing unit U2. The housing 20 includes a partition wall 23, an entrance and exit 25, and a gate 26. The partition wall 23 divides the interior of the housing 20 into a first space 21 on the upper side and a second space 22 on the lower side. The first space 21 houses a light source 41, which will be described later, and the second space 22 houses an airflow forming unit 50, a support unit 60, a distance changing unit 70, and an oxygen addition unit 80, which will be described later. The entrance and exit 25 are provided on the sidewall of the second space 22 and are used to facilitate the loading and unloading of wafers W into and out of the second space 22. The gate 26 switches the state of the entrance and exit 25 between an open state and a closed state using a power source such as an electric motor or an air cylinder. The open state allows wafers W to be loaded and unloaded through the entrance and exit 25, while the closed state prevents wafers W from being loaded and unloaded through the entrance and exit 25. Even when the gate 26 is closed, ventilation through the entrance and exit 25 is still possible. That is, the shutter 26 closes the inlet and outlet 25 while leaving an opening for ventilation.

[0066] The rotation holding unit 30 includes a holding unit 31 and a rotation driving unit 32. The holding unit 31 holds the wafer W horizontally arranged with the surface Wa facing upward from below. The holding unit 31 includes a hot plate 33. The hot plate 33 is provided to face the back surface Wb of the wafer W. Figure 4 As shown, the hot plate 33 includes multiple heating zones arranged radially relative to the wafer W. For example, the hot plate 33 includes multiple (four in the figure) heating zones 33a, 33b, 33c, and 33d arranged concentrically from the center toward the periphery of the wafer W. Each of the heating zones 33a, 33b, 33c, and 33d has a built-in heater. This allows for adjustable temperature distribution for each of the heating zones 33a, 33b, 33c, and 33d.

[0067] The rotation drive unit 32 rotates the wafer W held by the holding unit 31 together with the heat plate 33. The rotation drive unit 32 uses a motor as a power source, for example, to rotate the holding unit 31 around a vertical axis passing through the centers of the wafer W and the heat plate 33.

[0068] return Figure 3The light irradiation part 40 has a light source 41 and a window part 42. The light source 41 is housed in the first space 21 mentioned above, and irradiates the surface Wa of the chip W held in the holding part 31 with light for ashing the organic film. The light for ashing is, for example, ultraviolet light with a wavelength of 10 to 300 nm. The light source 41 is configured to generate an illumination spot on the surface Wa of the chip W, at least in the circumferential direction. For example, the light irradiation part 40 has at least one straight tube type light source 41 along the surface opposite to the chip W held in the holding part 31. As Figure 5 As shown, the light irradiation unit 40 may also include multiple light sources 41 arranged parallel to each other along a horizontal plane. In the figure, the light irradiation unit 40 includes four light sources 41, but this is not limited to this. For example, the light irradiation unit 40 may include more light sources 41. A window 42 is provided in the partition wall 23 at a position corresponding to the retaining portion 31, allowing light from the light source 41 to pass through to the second space 22.

[0069] return Figure 3 The airflow forming section 50 forms an airflow of oxygen-containing gas (e.g., air) in such a manner that the airflow can pass between the wafer W held by the rotating holding section 30 and the light irradiation section 40. For example, the airflow forming section 50 forms an airflow in such a manner that the airflow passes horizontally between the window section 42 and the wafer W in the second space 22. Specifically, the airflow forming section 50 has an opening 51 and an exhaust port 52. The opening 51 is an opening left at the inlet and outlet 25 when the gate 26 is closed. The exhaust port 52 is provided on the side wall of the second space 22 on the opposite side of the inlet and outlet 25. The airflow forming section 50 may also have a plurality of exhaust ports 52. For example, the airflow forming section 50 has two exhaust ports 52 arranged vertically on the opposite side of the inlet and outlet 25. Each exhaust port 52 is connected to an exhaust pipe 53 to conduct exhaust gas from the inside of the second space 22 to the outside of the second space 22. Thus, an airflow is formed in the second space 22 that flows from the side of the inlet and outlet 25 to the inner side of the second space 22. A portion of this airflow passes between the window portion 42 and the wafer W and is exhausted from the exhaust port 52 together with sublimates produced by ashing.

[0070] Here, the light irradiation section 40 is configured to irradiate light onto the oxygen-containing gas before it enters between the wafer W and the light irradiation section 40, while the airflow forming section 50 forms an airflow of oxygen-containing gas between the wafer W and the light irradiation section 40. For example, at least a portion of the periphery of the window section 42 on the side of the opening 51 protrudes outward compared to the outer periphery of the wafer W. Thus, the light from the light source 41 is irradiated onto the oxygen-containing gas that flows from the opening 51 to the space between the wafer W and the light irradiation section 40. In addition, as Figure 3 As shown, the periphery of the window portion 42 may protrude outward from the outer periphery of the wafer W throughout the entire periphery.

[0071] The support portion 60 is disposed below the holding portion 31 within the second space 22. The support portion 60 includes a plurality of support pins 61 that protrude upward. The tips of the support pins 61 protrude through the holding portion 31 and retract onto the hot plate 33, supporting the wafer W as it is moved into and out of the second space 22.

[0072] The distance changing unit 70 changes the distance between the wafer W held by the rotating holding unit 30 and the light irradiation unit 40. For example, the distance changing unit 70 uses a motor or a cylinder as a power source to raise and lower the rotating holding unit 30. When the distance changing unit 70 raises the rotating holding unit 30, the distance between the wafer W and the light irradiation unit 40 becomes smaller, and when the distance changing unit 70 lowers the rotating holding unit 30, the distance between the wafer W and the light irradiation unit 40 becomes larger. In addition, the distance changing unit 70 also functions as a mechanism for causing the front end portion of the support pin 61 of the support unit 60 to protrude and sink onto the hot plate 33. Specifically, when the distance changing unit 70 lowers the rotating holding unit 30, the support pin 61 passes through the holding unit 31, and the front end portion of the support pin 61 protrudes onto the hot plate 33.

[0073] The oxygen addition unit 80 adds oxygen to the oxygen-containing gas flowing from the opening 51 toward the space between the wafer W and the light irradiation unit 40. For example, the oxygen addition unit 80 includes the opening 51, a nozzle 81 opening at the periphery of the wafer W, an oxygen supply source 82 for supplying oxygen to the nozzle 81, and a valve 83 for opening and closing the flow path from the oxygen supply source 82 to the nozzle 81. The opening (supply port) of the nozzle 81 may also be oriented toward the center between the wafer W and the light irradiation unit 40. Furthermore, the oxygen supply source 82 is preferably configured to supply a gas having an oxygen concentration at least higher than that of the oxygen-containing gas described above to the nozzle 81 as the oxygen addition gas.

[0074] The ashing unit U2 thus configured is controlled by the aforementioned control unit 100. The control unit 100 is configured to perform the following control operations: the light irradiation unit 40 is controlled to irradiate the surface Wa of the wafer W with light for ashing while the airflow forming unit 50 forms an airflow of oxygen-containing gas between the wafer W and the light irradiation unit 40; and the rotation holding unit 30 is controlled to rotate the wafer W while the airflow forming unit 50 forms an airflow of oxygen-containing gas between the wafer W and the light irradiation unit 40 and the light irradiation unit 40 irradiates the surface Wa of the wafer W with light for ashing (hereinafter referred to as the "irradiation state with airflow").

[0075] The control unit 100 can further control the hot plate 33 to adjust the temperature distribution under the condition of reducing the difference in the progress of ashing between the regions arranged in the radial direction of the wafer W, and can also further control the light irradiation unit 40 to adjust the irradiation amount of the ashing light under the condition of reducing the difference in the progress of ashing between the regions arranged in the radial direction of the wafer W. The control unit 100 can also control the distance changing unit 70 to change the distance between the wafer W and the light irradiation unit 40 so that the ashing light is irradiated under various conditions with different distances between the wafer W and the light irradiation unit 40 while a flow of oxygen-containing gas is formed between the wafer W and the light irradiation unit 40.

[0076] The control unit 100 can further control the oxygen addition unit 80 to add oxygen to the oxygen-containing gas before it enters the space between the wafer W and the light irradiation unit 40 while airflow is being applied. The control unit 100 can control the light irradiation unit 40 to reduce the rotation speed of the wafer W as time passes from the start of irradiating the wafer W with ashing light, or can control the light irradiation unit 40 to increase the amount of ashing light applied as time passes from the start of irradiating the wafer W with ashing light. The control unit 100 can also control the rotation holding unit 30 to rotate the wafer W two or more times while airflow is being applied.

[0077] For example, the control unit 100 as a functional structure for controlling the ashing unit U2 (hereinafter referred to as a "functional module") has a heating control unit 111, a carry-in and carry-out control unit 112, a distance change control unit 113, an irradiation control unit 114, a rotation control unit 115, an adding control unit 116 and a scheme storage unit 117.

[0078] The heating control unit 111 controls the hot plate 33 to adjust the temperature distribution while minimizing differences in the progress of ashing between regions arranged in the radial direction of the wafer W. For example, the heating control unit 111 controls the hot plate 33 so that the temperature of the heating region corresponding to the region with a high ashing rate is lowered while maintaining a uniform temperature distribution, and so that the temperature of the heating region corresponding to the region with a low ashing rate is raised while maintaining a uniform temperature distribution. The loading and unloading control unit 112 controls the gate 26, the distance adjustment unit 70, and the transfer arm A2 to load and unload the wafer W into and out of the second space 22.

[0079] The distance change control unit 113 controls the distance change unit 70 to change the distance between the wafer W and the light irradiation unit 40. This allows the wafer W to be irradiated with light for ashing under various conditions with different distances from the light irradiation unit 40, while an oxygen-containing gas flow is formed between the wafer W and the light irradiation unit 40. As the distance between the airflow forming unit 50 and the light irradiation unit 40 increases, oxygen more easily reaches the downstream side of the airflow. Therefore, as the distance between the airflow forming unit 50 and the light irradiation unit 40 increases, ashing tends to progress faster on the downstream side of the airflow. The distance change control unit 113 changes the distance between the airflow forming unit 50 and the light irradiation unit 40 within a range from a first distance in which ashing progresses more rapidly in the central portion (including the center) of the wafer W than in the outer periphery (the portion near the outer periphery), to a second distance in which ashing progresses less rapidly in the central portion than in the outer periphery.

[0080] The irradiation control unit 114 controls the light irradiation unit 40 so that the surface Wa of the wafer W is irradiated with ashing light while the airflow forming unit 50 forms an airflow of oxygen-containing gas between the wafer W and the light irradiation unit 40. The irradiation control unit 114 may also control the light irradiation unit 40 so as to adjust the irradiation amount of the ashing light while reducing the difference in the progress of ashing between radially arranged regions of the wafer W. For example, the irradiation control unit 114 controls the light irradiation unit 40 so as to reduce the irradiation amount toward regions with a high ashing progress rate while maintaining a uniform irradiation amount, and to increase the irradiation amount toward regions with a low ashing progress rate while maintaining a uniform irradiation amount. The irradiation control unit 114 controls the light irradiation unit so as to increase the irradiation amount of the ashing light as time passes from the start of irradiation of the wafer W with the ashing light.

[0081] The rotation control unit 115 controls the rotation holding unit 30 to rotate the wafer W while the airflow is being irradiated. The rotation control unit 115 may also control the rotation holding unit 30 to reduce the rotation speed of the wafer W as time passes from the start of irradiation of the ashing light onto the wafer W. The rotation control unit 115 may also control the rotation holding unit 30 to rotate the wafer W two or more times while the airflow is being irradiated.

[0082] The addition control unit 116 controls the oxygen addition unit 80 so that oxygen is added to the oxygen-containing gas before entering between the wafer W and the light irradiation unit 40 in an irradiation state with air flow.

[0083] The recipe storage unit 117 stores preset control parameters. These control parameters include preset control target values for the hot plate 33 (e.g., target temperature values for each heating area) for control by the heating control unit 111, preset control target values for the distance change unit 70 (e.g., target height value for the holding unit 31) for control by the distance change control unit 113, preset control target values for the light irradiation unit 40 (e.g., target light intensity value for each light source 41) for control by the irradiation control unit 114, and preset control target values for the rotation holding unit 30 (e.g., target rotation speed value and number of rotations for the holding unit 31) for control by the rotation control unit 115.

[0084] The control unit 100 is composed of one or more control computers. For example, the control unit 100 has Figure 6 The circuit 120 shown. The circuit 120 has one or more processors 121, a memory 122, a storage device 123 and an input / output port 124. The storage device 123 has, for example, a computer-readable storage medium such as a hard disk. The storage medium stores a program for causing the ashing unit U2 to execute the substrate processing sequence described later. The storage medium can also be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, and an optical disk. The memory 122 temporarily stores the program loaded from the storage medium of the storage device 123 and the calculation results of the processor 121. The processor 121 constitutes the above-mentioned functional modules by executing the above-mentioned program in conjunction with the memory 122. The input / output port 124 inputs and outputs signals between the hot plate 33, the gate 26, the conveying arm A2, the rotating holding part 30, the light irradiation part 40, the distance changing part 70, and the oxygen adding part 80 according to the instructions from the processor 121. In addition, the hardware structure of the control unit 100 is not limited to the functional modules being constituted by the program. For example, each functional block of the control unit 100 may be formed of a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) in which the dedicated logic circuit is integrated.

[0085] (Substrate Processing Method)

[0086] Next, as an example of a substrate processing method, a substrate processing sequence performed by the ashing unit U2 is described. The substrate processing sequence includes: forming an oxygen-containing gas flow in a manner that allows the gas flow to pass between the wafer W and the light irradiation unit 40; irradiating the surface Wa of the wafer W with light for ashing from the light irradiation unit 40 while a gas flow containing oxygen is formed between the wafer W and the light irradiation unit 40; and rotating the wafer W while the gas flow is irradiated. Figures 7 to 15 The substrate processing sequence is specifically illustrated. Figures 7 to 15The sequence is executed in a state where the airflow formation by the airflow formation portion 50 is continuously performed (that is, a state where exhaust from the exhaust port 52 is continuously performed).

[0087] like Figure 7 As shown, the control unit 100 first executes steps S01 and S02. In step S01, the heating control unit 111 controls the hot plate 33 according to the target temperature value for heat treatment stored in the recipe storage unit 117 to begin temperature adjustment of each heating zone. In step S02, the loading and unloading control unit 112 controls the loading of wafers W into the second space 22.

[0088] For example, the loading and unloading control unit 112 controls the gate 26 to switch the state of the entrance and exit 25 from the closed state to the open state, and controls the distance changing unit 70 to lower the holding unit 31 to a position where the front end of the support pin 61 protrudes from the hot plate 33 (hereinafter referred to as the "loading and unloading position"). After that, the loading and unloading control unit 112 controls the transport to the arm A2 so that the wafer W is loaded into the second space 22 through the entrance and exit 25, and is horizontally arranged on the support pin 61 with the surface Wa facing upward (refer to FIG. Figure 8 (a)). After that, the loading and unloading control unit 112 controls the gate 26 to switch the state of the entrance and exit 25 from the open state to the closed state, and controls the distance changing unit 70 to raise the holding unit 31 until the front end of the support pin 61 is located below the hot plate 33 (refer to Figure 8 (b)). As a result, the wafer W is placed on the hot plate 33, and the hot plate 33 starts heating the wafer W.

[0089] Next, the control unit 100 executes steps S03, S04, and S05. In step S03, the heating control unit 111 waits for the passage of a specified time stored in the recipe storage unit 117. The specified time is predetermined to ensure that the hard masking of the organic film is fully completed. Step S04 includes an ashing process in which the organic film on the surface Wa of the wafer W is irradiated with ashing light. The specific procedure for the ashing process will be described later. Next, the control unit 100 executes step S05. In step S05, the loading and unloading control unit 112 confirms whether the entire wafer W to be processed has been processed.

[0090] If, in step S05, it is determined that processing of all wafers W has not yet been completed, the control unit 100 proceeds to step S06. In step S06, the loading / unloading control unit 112 controls the unloading of the wafer W from the second space 22 and the loading / unloading of the next wafer W into the second space 22. For example, the loading / unloading control unit 112 controls the gate 26 to switch the state of the access door 25 from closed to open, and controls the distance adjustment unit 70 to lower the holding unit 31 to the loading / unloading position. The loading / unloading control unit 112 then controls the transport arm A2 to unload the wafer W from the second space 22 through the access door 25, and to load the next wafer W into the second space 22 through the access door 25, placing it horizontally on the support pins 61 with the surface Wa facing upward. After that, the loading and unloading control unit 112 controls the gate 26 to switch the state of the entrance and exit 25 from the open state to the closed state, and controls the distance changing unit 70 to raise the holding unit 31 until the front end of the support pin 61 is located below the hot plate 33 (refer to Figure 8 (b)). After step S06, the control unit 100 returns the process to step S03. Thereafter, the heat treatment and the ashing process are repeated until the entire wafer W is processed.

[0091] In step S05, if it is determined that the processing of the entire wafer W has been completed, the control unit 100 executes steps S07 and S08. In step S07, the loading and unloading control unit 112 performs control for unloading the wafer W from the second space 22. For example, the loading and unloading control unit 112 controls the gate 26 to switch the state of the entrance and exit 25 from a closed state to an open state, and controls the distance changing unit 70 to lower the holding unit 31 to the above-mentioned loading and unloading position. Thereafter, the loading and unloading control unit 112 controls the transport to the arm A2 so that the wafer W is unloaded from the second space 22 through the entrance and exit 25. Thereafter, the loading and unloading control unit 112 controls the gate 26 to switch the state of the entrance and exit 25 from an open state to a closed state. In step S08, the heating control unit 111 controls the hot plate 33 to stop heating. Through the above process, the control sequence of the ashing unit U2 of the control unit 100 is completed.

[0092] (Ashing process sequence)

[0093] Next, the specific order of the ashing process in step S04 is illustrated. Figure 9As shown, the control unit 100 first executes steps S11, S12, and S13. In step S11, the heating control unit 111 controls the hot plate 33 to change the temperature of each heating area according to the temperature target value for the ashing process stored in the recipe storage unit 117. The temperature target value for the ashing process is pre-set as follows: when the temperature distribution is uniform, the temperature of the heating area corresponding to the area with a high ashing progress rate is lowered; when the temperature distribution is uniform, the temperature of the heating area corresponding to the area with a low ashing progress rate is increased. In step S12, the rotation control unit 115 controls the rotation holding unit 30 so that the rotation drive of the holding unit 31 is started by the rotation drive unit 32. Thereby, the rotation of the wafer W and the hot plate 33 is started. In step S13, the irradiation control unit 114 controls the light irradiation unit 40 to light the light source 41.

[0094] Next, the control unit 100 executes step S14. In step S14, the rotation control unit 115 checks whether the wafer W has completed one rotation (whether the rotation angle of the wafer W has reached 360°) since the light source 41 began to illuminate. If, in step S14, the control unit 100 determines that the wafer W has not completed one rotation, the control unit 100 executes step S15. In step S15, the rotation control unit 115 controls the rotation holding unit 30 to reduce the rotation speed of the holding unit 31 to the deceleration pitch stored in the recipe storage unit 117.

[0095] Here, the ashing rate under the same conditions (hereinafter referred to as the "ashing rate") tends to decrease over time. When the ashing rate decreases during the rotation of wafer W, the effect of improving uniformity required by the rotation of wafer W is reduced. In contrast, by reducing the rotational speed of wafer W over time from the start of irradiation of wafer W with ashing light, the effect of the decreased ashing rate can be suppressed, thereby minimizing the reduction in the uniformity-enhancing effect. The deceleration pitch is pre-set to minimize the effect of the decreased ashing rate.

[0096] After step S15, the control unit 100 returns the process to step S14. Thereafter, the rotation control unit 115 controls the rotation holding unit 30 to gradually reduce the rotation speed in the above-mentioned airflow irradiation state and continue to rotate the wafer W driven by the rotation drive unit 32 until the wafer W rotates one circle (refer to Figure 10 ).

[0097] If, in step S14, it is determined that the wafer W has rotated one revolution, the control unit 100 executes steps S16, S17, S18, and S19. In step S16, the irradiation control unit 114 controls the light irradiation unit 40 to extinguish the light source 41. In step S17, the rotation control unit 115 controls the rotation holding unit 30 to stop the rotation drive of the holding unit 31 driven by the rotation drive unit 32. In step S18, the rotation control unit 115 controls the rotation holding unit 30 to rotate the holding unit 31 in the opposite direction to the position before executing step S12. In step S19, the heating control unit 111 controls the hot plate 33 to return the temperature of each heating zone to the temperature used for the above-mentioned heat treatment. This completes the ashing process.

[0098] In addition, in step S15, instead of reducing the rotation speed of the holding unit 31, the irradiation control unit 114 may control the light irradiation unit 40 to increase the irradiation amount of the light used for ashing at an increasing pitch stored in the recipe storage unit 117. The increasing pitch is pre-set to suppress the influence of the aforementioned decrease in the progress speed of ashing. In addition, in step S15, the rotation speed of the holding unit 31 may be reduced at a deceleration pitch stored in the recipe storage unit 117 and the irradiation amount of the light used for ashing may be increased at an increasing pitch stored in the recipe storage unit 117. Furthermore, the rotation control unit 115 may control the rotation holding unit 30 to substantially continue to rotate the wafer W driven by the rotation drive unit 32 at a fixed rotation speed without executing step S15. Another modified example of the ashing process sequence will be further described below.

[0099] (First Modification)

[0100] Figure 11 Steps S31 to S37 represent the steps from Figure 9 The graying sequence omits steps S11 and S19 regarding temperature adjustment, and instead adjusts the light intensity distribution to light the light source 41. Steps S31 to S37 correspond to steps S12 to S18, respectively.

[0101] In step S32 regarding the lighting of the light sources 41, the irradiation control unit 114 controls the light irradiation unit 40 so that each light source 41 is illuminated according to the light intensity distribution for the ashing process stored in the recipe storage unit 117. The light intensity distribution for the ashing process is set so that the irradiation amount toward the area with a high ashing progress rate is reduced when the irradiation amount is uniform, and the irradiation amount toward the area with a low ashing progress rate is increased when the irradiation amount is uniform. Steps S31 and steps S33 to S37 are the same as steps S12 and steps S14 to S18. In addition, steps S11 and S19 regarding the temperature adjustment step can also be combined with step S32 regarding the irradiation amount adjustment step.

[0102] (Second Modification)

[0103] Figure 12 Steps S41 to S49 represent the steps from Figure 9 The ashing sequence omits steps S11 and S19 regarding temperature adjustment and instead adds steps S41 and S48 regarding oxygen addition by the oxygen addition unit 80. Steps S42 to S47 and step S49 are the same as steps S12 to S18. In step S41 regarding the start of oxygen addition, the addition control unit 116 controls the oxygen addition unit 80 to open valve 83. This starts the addition of oxygen to the oxygen-containing gas. In step S48 regarding the stop of oxygen addition, the addition control unit 116 controls the oxygen addition unit 80 to open valve 83. This stops the addition of oxygen from the oxygen-containing gas.

[0104] Figure 12 In the example shown, step S41 for starting oxygen addition is performed before step S42 for starting wafer W rotation, and step S48 is performed between step S47 for stopping wafer W rotation and step S49 for reverse rotation of wafer W, but the present invention is not limited to this. Step S41 for starting oxygen addition may be performed at least before step S43 for activating light source 41, and step S48 for stopping oxygen addition may be performed at least after step S46 for extinguishing light source 41. Furthermore, steps S11 and S19 for temperature adjustment, step S32 for irradiation adjustment of the first modification, and steps S41 and S48 for oxygen addition of the second modification may be performed in combination.

[0105] (Third Modification)

[0106] Figure 13 Steps S51 to S59 represent changing the light source 41 so as to rotate the wafer W two or more times. Figure 9 The sequence after steps S11 to S19. Figure 13 As shown, the control unit 100 first executes steps S51, S52, and S53, which are similar to steps S11, S12, and S13. In step S51, the heating control unit 111 controls the hot plate 33 to change the temperature of each heating area according to the temperature target value for the ashing process stored in the recipe storage unit 117. In step S52, the rotation control unit 115 controls the rotation holding unit 30 to start the rotation drive of the holding unit 31 driven by the rotation drive unit 32. In step S53, the irradiation control unit 114 controls the light irradiation unit 40 to illuminate the light source 41.

[0107] Next, the control unit 100 executes step S54. In step S54, after the light source 41 begins lighting, the rotation control unit 115 waits for the wafer W to complete one rotation. Next, the control unit 100 executes steps S55 and S56, which are similar to steps S16 and S17. In step S55, the irradiation control unit 114 controls the light irradiation unit 40 to turn off the light source 41. In step S56, the rotation control unit 115 controls the rotation holding unit 30 to stop the rotation of the holding unit 31 driven by the rotation drive unit 32.

[0108] Next, the control unit 100 executes step S57. In step S57, the rotation control unit 115 confirms whether the number of rotations of the chip W has reached the set number stored in the recipe storage unit 117. The set number is pre-set to a value of two or more. In step S57, if it is determined that the number of rotations of the chip W has not reached the above-mentioned set number, the control unit 100 executes step S58. In step S58, the rotation control unit 115 controls the rotation holding unit 30 to reverse the rotation direction and start the rotation drive of the holding unit 31 driven by the rotation drive unit 32. After step S58, the control unit 100 returns the processing to step S53. Thereafter, the chip W is repeatedly rotated one circle while the light source 41 is turned on until the number of rotations of the chip W reaches the above-mentioned set number.

[0109] If, in step S57, the control unit 100 determines that the wafer W has rotated the specified number of times, the control unit 100 executes step S59, which is similar to step S19. In step S59, the heating control unit 111 controls the hot plate 33 to return the temperature of each heating zone to the temperature used for the heat treatment, thereby completing the ashing process.

[0110] Furthermore, similar to the modifications illustrated in steps S51-59, the number of rotations of the wafer W can be set to two or more in the sequence of the first modification, or two or more in the sequence of the second modification. Furthermore, the number of rotations of the wafer W can be set to two or more in a sequence that combines steps S11 and S19 regarding temperature adjustment, step S32 regarding irradiation intensity adjustment in the first modification, and steps S41 and S48 regarding oxygen addition in the second modification. Furthermore, the rotation control unit 115 can control the rotation holding unit 30 so that the rotation speed of the holding unit 31 driven by the rotation drive unit 32 decreases with each rotation. Furthermore, the irradiation control unit 114 can control the light irradiation unit 40 so that the irradiation intensity of the ashing light increases with each rotation.

[0111] (Fourth Modification)

[0112] Figure 14 Steps S61 to S68 represent the steps from Figure 13The ashing sequence of the present invention omits steps S51 and S59 regarding temperature adjustment and instead adds a step S67 for changing the distance between the wafer W and the light irradiation unit 40 every rotation. Steps S61 to S66 and S68 are the same as Figure 13 The control unit 100 executes step S67 between step S65 for stopping the rotation of the wafer W and step S68 for starting the reverse rotation of the wafer W. In step S67, the distance change control unit 113 controls the distance change unit 70 to change the distance between the wafer W and the light irradiation unit 40 according to the control target value stored in the recipe storage unit 117 (see FIG. Figure 15 (a) and (b)). The control target value is preset so as to change the distance between the wafer W and the light irradiation unit 40 within a range including the first distance and the second distance. Furthermore, step S67 regarding distance change can be combined with any of the sequences illustrated in the third modification.

[0113] (Effects of this embodiment)

[0114] As described above, the substrate processing apparatus 1 includes: a rotating holding portion 30 for holding a wafer W having an organic film on its surface Wa and rotating the wafer W; a light irradiation portion 40 for irradiating light for ashing the organic film onto the surface Wa of the wafer W held by the rotating holding portion 30; a gas flow forming portion 50 for forming a gas flow containing oxygen so that the gas flow can pass between the wafer W held by the rotating holding portion 30 and the light irradiation portion 40; an irradiation control portion 114 for controlling the light irradiation portion 40 so that the light for ashing is irradiated onto the surface Wa of the wafer W in a state in which the gas flow forming portion 50 forms a gas flow containing oxygen between the wafer W and the light irradiation portion 40; and a rotation control portion 115 for controlling the rotating holding portion 30 so that the wafer W is rotated in a state in which the gas flow forming portion 50 forms a gas flow containing oxygen between the wafer W and the light irradiation portion 40 and the light irradiation portion 40 irradiates the surface Wa of the wafer W with light for ashing.

[0115] According to this substrate processing apparatus 1, while the airflow forming section 50 forms an oxygen-containing gas flow between the wafer W and the light irradiation section 40, ashing light is irradiated onto the surface Wa of the wafer W. Therefore, during the irradiation of the ashing light, oxygen is continuously supplied between the wafer W and the light irradiation section 40, making it easy to achieve the desired ashing result. Furthermore, while the airflow forming section 50 forms an oxygen-containing gas flow between the wafer W and the light irradiation section 40 and the light irradiation section 40 irradiates the ashing light onto the surface Wa of the wafer W, the wafer W rotates. Therefore, it is possible to suppress ashing spots caused by the airflow. This effectively improves ashing uniformity.

[0116] The substrate processing device 1 may also include: a hot plate 33, which is arranged on the rotating holding part 30 in a manner opposite to the back side Wb of the chip W and can rotate together with the chip W; and a heating control part 111, which controls the hot plate 33 so as to adjust the temperature distribution under the condition of reducing the difference in the progress of ashing between the areas arranged in the radial direction of the chip W. According to the structure in which the chip W is rotated in a state where the airflow forming part 50 forms an airflow of oxygen-containing gas between the chip W and the light irradiation part 40 and the light irradiation part 40 irradiates the surface Wa of the chip W with light for ashing, it is particularly effective to improve the uniformity of ashing of the chip W in the circumferential direction. In addition, according to the structure in which the temperature distribution is adjusted according to each area arranged in the radial direction of the chip W, the uniformity of ashing of the chip W in the radial direction can also be improved.

[0117] The irradiation control unit 114 may also control the light irradiation unit 40 so as to adjust the irradiation amount of the ashing light while reducing the difference in the progress of ashing between the regions arranged in the radial direction of the wafer W. In this case, by adjusting the irradiation amount of the ashing light for each region arranged in the radial direction of the wafer W, the uniformity of ashing in the radial direction of the wafer W can be improved.

[0118] The substrate processing apparatus 1 may further include a distance changing unit 70 for changing the distance between the wafer W held by the rotating holding unit 30 and the light irradiation unit 40; and a distance change control unit 113 for controlling the distance changing unit 70 to change the distance between the wafer W and the light irradiation unit 40 so that, while a flow of oxygen-containing gas is formed between the wafer W and the light irradiation unit 40, the wafer W is irradiated with ashing light under various conditions with different distances from the light irradiation unit 40. In this case, by changing the distance between the wafer W and the light irradiation unit 40, the oxygen concentration distribution in the direction of the gas flow can be changed, thereby improving the uniformity of ashing in the direction of the gas flow.

[0119] The substrate processing apparatus 1 may further include an oxygen addition unit 80 for adding oxygen to the oxygen-containing gas, and an oxygen addition control unit 116 for controlling the oxygen addition unit 80 so that, while the gas flow forming unit 50 forms a gas flow of the oxygen-containing gas between the wafer W and the light irradiation unit 40 and the light irradiation unit 40 irradiates light onto the surface Wa of the wafer W, oxygen is added to the oxygen-containing gas before entering the space between the wafer W and the light irradiation unit 40. In this case, the addition of oxygen can suppress oxygen deficiency on the downstream side of the gas flow, thereby improving the uniformity of ashing along the gas flow direction. Therefore, for example, when the progress of ashing in the central portion is slower than that in the peripheral portion, the addition of oxygen can further reduce the difference.

[0120] The oxygen addition unit 80 may also include a supply port for supplying oxygen addition gas, the supply port opening toward the center between the wafer W and the light irradiation unit 40. In this case, the addition of oxygen toward the downstream side of the gas flow is further promoted by the flow rate of the oxygen addition gas when it is supplied.

[0121] The light irradiation unit 40 may also irradiate the oxygen-containing gas before it enters between the wafer W and the light irradiation unit 40, while the airflow forming unit 50 forms an airflow of the oxygen-containing gas between the wafer W and the light irradiation unit 40. In this case, by activating oxygen in the oxygen-containing gas before it enters between the wafer W and the light irradiation unit 40, a shortage of active oxygen immediately after the oxygen-containing gas enters can be suppressed, thereby improving the uniformity of ashing in the airflow direction.

[0122] The rotation control unit 115 may also control the rotation holding unit 30 so that the rotation speed of the wafer W decreases as time passes from the time when the ashing light begins to be irradiated onto the control wafer W. The ashing progress rate under the same conditions (hereinafter referred to as the "ashing progress rate") tends to decrease over time. When the ashing progress rate decreases during the rotation of the wafer W, the effect of improving uniformity achieved by the rotation of the wafer W is reduced. In contrast, by reducing the rotation speed of the wafer W as time passes from the time when the ashing light begins to be irradiated onto the wafer W, the effect of the decrease in the ashing progress rate can be suppressed, thereby preventing the reduction in the uniformity improvement effect described above.

[0123] The irradiation control unit 114 may also control the light irradiation unit 40 so as to increase the irradiation amount of the ashing light as time passes from the start of irradiation of the ashing light onto the wafer W. In this case, by increasing the irradiation amount of the ashing light as time passes from the start of irradiation of the ashing light onto the wafer W, the effect of a decrease in the progress of ashing can be suppressed, thereby suppressing the reduction in the effect of improving uniformity.

[0124] The rotation control unit 115 may also control the rotation holding unit 30 so that the wafer W rotates two or more times while the airflow forming unit 50 forms an oxygen-containing gas flow between the wafer W and the light irradiation unit 40 and the light irradiation unit 40 irradiates the surface Wa of the wafer W with light for ashing. In this case, the decrease in the ashing progress rate during one rotation of the wafer W is minimized. This can prevent the reduction in the uniformity-enhancing effect described above.

[0125] While the embodiments have been described above, the present invention is not limited to the aforementioned embodiments and various modifications can be made without departing from the spirit and scope of the present invention. The substrates processed by the substrate processing apparatus 1 are not limited to semiconductor wafers, but may also be glass substrates, mask substrates, FPDs (flat panel displays), and the like.

Claims

1. A substrate processing device, characterized in that: include: a rotation holding portion for holding and rotating a substrate, wherein the substrate has an organic film on a surface; a light irradiation unit for irradiating the surface of the substrate held by the rotation holding unit with light for ashing the organic film; a gas flow forming section for forming a gas flow of the oxygen-containing gas so as to allow the gas flow to pass between the substrate held by the rotation holding section and the light irradiation section; an irradiation control unit configured to control the light irradiation unit so that the ashing light is irradiated onto the surface of the substrate in a state where the flow of the oxygen-containing gas is formed between the substrate and the light irradiation unit by the flow formation unit; and a rotation control unit that controls the rotation holding unit so that the substrate is rotated in a state where the gas flow forming unit forms a gas flow of the oxygen-containing gas between the substrate and the light irradiation unit and the light irradiation unit irradiates the ashing light onto the surface of the substrate; The rotation control unit controls the rotation holding unit so as to reduce the rotation speed of the substrate as time passes from when the ashing light starts to be irradiated onto the substrate.

2. A substrate processing device, characterized in that: include: a rotation holding portion for holding and rotating a substrate, wherein the substrate has an organic film on a surface; a light irradiation unit for irradiating the surface of the substrate held by the rotation holding unit with light for ashing the organic film; a gas flow forming section for forming a gas flow of the oxygen-containing gas so as to allow the gas flow to pass between the substrate held by the rotation holding section and the light irradiation section; an irradiation control unit configured to control the light irradiation unit so that the ashing light is irradiated onto the surface of the substrate in a state where the flow of the oxygen-containing gas is formed between the substrate and the light irradiation unit by the flow formation unit; and a rotation control unit that controls the rotation holding unit so that the substrate is rotated in a state where the gas flow forming unit forms a gas flow of the oxygen-containing gas between the substrate and the light irradiation unit and the light irradiation unit irradiates the ashing light onto the surface of the substrate; The irradiation control unit controls the light irradiation unit so as to increase the irradiation amount of the ashing light as time passes from the start of irradiation of the ashing light onto the substrate.

3. A substrate processing device, characterized in that: include: a rotation holding portion for holding and rotating a substrate, wherein the substrate has an organic film on a surface; a light irradiation unit for irradiating the surface of the substrate held by the rotation holding unit with light for ashing the organic film; a gas flow forming section for forming a gas flow of the oxygen-containing gas so as to allow the gas flow to pass between the substrate held by the rotation holding section and the light irradiation section; a distance changing portion for changing the distance between the substrate held by the rotation holding portion and the light irradiation portion; an irradiation control unit configured to control the light irradiation unit so that the ashing light is irradiated onto the surface of the substrate in a state where the flow of the oxygen-containing gas is formed between the substrate and the light irradiation unit by the flow formation unit; a rotation control unit that controls the rotation holding unit so that the substrate is rotated in a state where the gas flow forming unit forms a gas flow of the oxygen-containing gas between the substrate and the light irradiation unit and the light irradiation unit irradiates the ashing light onto the surface of the substrate; and The distance change control unit controls the distance change unit so that the oxygen concentration distribution in the direction of the gas flow is changed by changing the distance between the substrate and the light irradiation unit while the gas flow of the oxygen-containing gas is formed between the substrate and the light irradiation unit.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein: Also includes: a hot plate disposed on the rotation holding portion in a manner opposing the back surface of the substrate and capable of rotating together with the substrate; and A heating control unit controls the hot plate so as to adjust the temperature distribution under the condition that the difference in the progress of ashing between regions arranged in the radial direction of the substrate is reduced.

5. The substrate processing device according to any one of claims 1 to 3, characterized in that: The irradiation control unit controls the light irradiation unit so as to adjust the irradiation amount of the ashing light while reducing the difference in the progress of ashing between regions arranged in the radial direction of the substrate.

6. The substrate processing apparatus according to any one of claims 1 to 3, wherein: Also includes: an oxygen adding section for adding oxygen to the oxygen-containing gas; and An adding control unit controls the oxygen adding unit so that oxygen is added to the oxygen-containing gas before entering between the substrate and the light irradiation unit when the airflow forming unit forms the airflow of the oxygen-containing gas between the substrate and the light irradiation unit and the light irradiation unit irradiates light to the surface of the substrate.

7. The substrate processing device according to claim 6, wherein: The oxygen addition unit includes a supply port for supplying a gas for adding oxygen, and the supply port opens toward a center between the substrate and the light irradiation unit.

8. The substrate processing device according to any one of claims 1 to 3, wherein: In a state in which the gas flow forming section forms the gas flow of the oxygen-containing gas between the substrate and the light irradiation section, the light irradiation section also irradiates the ashing light onto the oxygen-containing gas before it enters between the substrate and the light irradiation section.

9. The substrate processing device according to any one of claims 1 to 3, characterized in that: The rotation control unit controls the rotation holding unit so that the substrate rotates more than two turns while the airflow forming unit forms the airflow of the oxygen-containing gas between the substrate and the light irradiation unit and the light irradiation unit irradiates the ashing light onto the surface of the substrate.

10. A substrate processing device, characterized in that: include: a rotation holding portion for holding and rotating a substrate, wherein the substrate has an organic film on a surface; a light irradiation unit for irradiating the surface of the substrate held by the rotation holding unit with light for ashing the organic film; a gas flow forming section for forming a gas flow of the oxygen-containing gas so as to allow the gas flow to pass between the substrate held by the rotation holding section and the light irradiation section; a distance changing portion for changing the distance between the substrate held by the rotation holding portion and the light irradiation portion; an irradiation control unit configured to control the light irradiation unit so that the ashing light is irradiated onto the surface of the substrate in a state where the flow of the oxygen-containing gas is formed between the substrate and the light irradiation unit by the flow formation unit; a rotation control unit that controls the rotation holding unit so that the substrate is rotated in a state where the gas flow forming unit forms a gas flow of the oxygen-containing gas between the substrate and the light irradiation unit and the light irradiation unit irradiates the ashing light onto the surface of the substrate; and A distance changing control unit controls the distance changing unit to change the distance between the substrate and the light irradiation unit so that the ashing light can be irradiated under a plurality of conditions in which the distances between the substrate and the light irradiation unit are different from each other while a flow of the oxygen-containing gas is formed between the substrate and the light irradiation unit.

11. A substrate processing method, characterized in that: include: a step of forming a gas flow of an oxygen-containing gas so that the gas flow can pass between the substrate having the organic film on the surface and the light irradiation portion irradiating the ashing light; irradiating the surface of the substrate with the ashing light from the light irradiation unit while forming a flow of the oxygen-containing gas between the substrate and the light irradiation unit; and The step of rotating the substrate in a state where a flow of the oxygen-containing gas is formed between the substrate and the light irradiation unit and the light irradiation unit irradiates the ashing light onto the surface of the substrate, The step of rotating the substrate includes reducing the rotation speed of the substrate as time passes from the start of irradiation of the substrate with the ashing light.

12. A substrate processing method, characterized in that: include: a step of forming a gas flow of an oxygen-containing gas so that the gas flow can pass between the substrate having the organic film on the surface and the light irradiation portion irradiating the ashing light; irradiating the surface of the substrate with the ashing light from the light irradiation unit while forming a flow of the oxygen-containing gas between the substrate and the light irradiation unit; and The step of rotating the substrate in a state where a flow of the oxygen-containing gas is formed between the substrate and the light irradiation unit and the light irradiation unit irradiates the ashing light onto the surface of the substrate, The step of irradiating the ashing light includes increasing the irradiation amount of the ashing light as time passes from the start of irradiating the ashing light onto the substrate.

13. A substrate processing method, characterized in that: include: a step of forming a gas flow of an oxygen-containing gas so that the gas flow can pass between the substrate having the organic film on the surface and the light irradiation portion irradiating the ashing light; irradiating the surface of the substrate with the ashing light from the light irradiation unit while forming a flow of the oxygen-containing gas between the substrate and the light irradiation unit; A step of rotating the substrate in a state where a flow of the oxygen-containing gas is formed between the substrate and the light irradiation unit and the light irradiation unit irradiates the ashing light onto the surface of the substrate; and A step of changing the oxygen concentration distribution in the direction of the gas flow by changing the distance between the substrate and the light irradiation unit while the gas flow of the oxygen-containing gas is formed between the substrate and the light irradiation unit.

14. The substrate processing method according to any one of claims 11 to 13, wherein: Also includes: The step of changing the distance between the substrate and the light irradiation part to form a flow of the oxygen-containing gas between the substrate and the light irradiation part so that the ashing light can be irradiated under multiple conditions where the distance between the substrate and the light irradiation part is different from each other.

15. A computer-readable storage medium, characterized in that: A program for causing the apparatus to execute the substrate processing method according to any one of claims 11 to 14 is stored.

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