Display device and method of manufacturing the same

Abstract

A display device and a method for manufacturing the display device are provided. The display device may include: a substrate, a thin film transistor, a first electrode, a second electrode and a barrier. The thin film transistor is arranged on the substrate. The first electrode is electrically connected to the thin film transistor. The second electrode overlaps the first electrode. The barrier has a first portion and a second portion. The second portion is arranged between the first portion and the second electrode and is doped with fluorine. The side surface of the first portion is a portion of an opening boundary of the barrier and is hydrophilic. The opening of the barrier is arranged between the first electrode and the second electrode.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2018-0009476 filed in the Korean Intellectual Property Office on January 25, 2018; the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The invention relates to a display device and a method for manufacturing the display device. Background Art

[0004] The inkjet printing device can discharge tiny droplets at one or more locations on the printing medium. The inkjet printing device can be used to manufacture display devices.

[0005] The above information disclosed in this Background section is for enhancement of understanding of the background of the application. The Background section may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art. Summary of the invention

[0006] Embodiments may relate to a display device including a light emitting element layer of satisfactory quality and a method for manufacturing the display device.

[0007] According to an embodiment, the display device includes the following elements: a substrate; a thin film transistor arranged on the substrate; a first electrode connected to the thin film transistor; a second electrode overlapping the first electrode; and a barrier rib arranged between the first electrode and the second electrode, wherein the barrier rib includes an opening overlapping the first electrode, an upper surface of the barrier rib is doped with fluorine, and a side surface of the opening of the barrier rib is hydrophilic.

[0008] The thickness of the fluorine-doped region of the barrier rib may be about 10 nm to about 100 nm.

[0009] A ratio of a thickness of the fluorine-doped region of the barrier rib with respect to an entire thickness of the barrier rib may be about 0.05% to about 20%.

[0010] The barrier rib may include a first barrier rib and a second barrier rib sequentially stacked, the second barrier rib may be disposed closer to the second electrode than the first barrier rib, and a region of the second barrier rib adjacent to the second electrode may be doped with fluorine.

[0011] The first barrier rib and the second barrier rib may include the same material.

[0012] The first barrier rib and the second barrier rib may include different materials.

[0013] According to an embodiment, a method for manufacturing a display device is provided. The method includes the following steps: preparing a substrate including a thin film transistor and a first electrode connected to the thin film transistor; forming a second layer including fluorine and a first layer disposed on the second layer on the substrate; exposing and developing the second layer and the first layer to form an opening overlapping the first electrode; and removing the first layer by performing plasma treatment on the opening, the second layer, and the first layer.

[0014] The thickness of the region of the second layer including fluorine may be about 10 nm to about 100 nm.

[0015] In the step of forming the opening overlapping the first electrode by exposing and developing the second layer and the first layer, the thickness of the first layer may be reduced.

[0016] In the step of removing the first layer by performing plasma treatment on the opening, the second layer, and the first layer, a side surface of the opening may have hydrophilicity.

[0017] In the step of removing the first layer by performing plasma treatment on the opening, the second layer, and the first layer, residues of the second layer and the first layer in the opening may be eliminated.

[0018] By using O 2 , Ar, N 2 NF 3 and CF 4 At least one of the following is used to perform plasma treatment.

[0019] The second layer and the first layer may include the same material, and the second layer may include not only the material of the first layer but also fluorine.

[0020] The second layer and the first layer may comprise different materials.

[0021] The method may further include, in the step of forming the second layer including fluorine on the substrate and the first layer disposed on the second layer, forming a third layer between the second layer and the first layer.

[0022] The third layer, the second layer, and the first layer may be formed on the substrate by applying and heating a material for the third layer, applying and heating a material for the second layer, and applying and heating a material for the first layer.

[0023] The first layer and the third layer may comprise the same material.

[0024] The method may further include forming at least one of an electron injection layer (EIL), an electron transport layer (ETL), an emission layer, a hole transport layer (HTL), and a hole injection layer (HIL) in the opening by an inkjet process.

[0025] Embodiments may relate to a display device. The display device may include: a substrate, a thin film transistor, a first electrode, a second electrode, and a barrier. The thin film transistor may be disposed on the substrate. The first electrode may be electrically connected to the thin film transistor. The second electrode overlaps the first electrode. The barrier has a first portion and a second portion. The second portion may be disposed between the first portion and the second electrode and may be fluorine-doped. A side surface of the first portion may be part of a boundary of an opening of the barrier and may be hydrophilic. The opening of the barrier may be disposed between the first electrode and the second electrode.

[0026] The thickness of the second portion in a direction perpendicular to the substrate may be in the range of 10 nm to 100 nm.

[0027] The first portion may be non-doped with fluorine. A ratio of a thickness of the second portion in a direction perpendicular to the substrate to a thickness of the barrier rib in a direction perpendicular to the substrate may be in a range of 0.05% to 20%.

[0028] A face of the second portion may directly contact the second electrode and may be doped with fluorine.

[0029] The first portion and the second portion may comprise the same material.

[0030] The first portion may include a first material. The second portion may include a second material different from each of the fluorine and the first material.

[0031] Embodiments may be directed to a method for manufacturing a display device. The method may include the following steps: preparing a substrate including a thin film transistor and a first electrode electrically connected to the thin film transistor; forming a material layer on the substrate, wherein the material layer may include a fluorine-containing portion; forming a capping layer on the material layer; forming an opening exposing the first electrode by partially removing the capping layer and the material layer; and removing a remaining portion of the capping layer by performing plasma treatment.

[0032] The thickness of the fluorine-containing portion in a direction perpendicular to the substrate may be in the range of 10 nm to 100 nm.

[0033] In the step of forming the opening, the thickness of the cover layer in a direction perpendicular to the substrate may be reduced.

[0034] After the remaining portion of the cover layer has been removed, the side surfaces of the remaining portion of the material layer may surround the opening and may be hydrophilic.

[0035] In the step of removing the remaining portion of the cover layer, residues of the material layer and the cover layer in the opening may be eliminated.

[0036] The plasma used in the plasma treatment may include O 2 , Ar, N 2 NF3 and CF 4 At least one of .

[0037] Both the material layer and the cover layer may include the first material. The material layer may include not only the first material but also fluorine.

[0038] The material layer may include a first material and fluorine. The cover layer may include a non-fluorine material different from the first material.

[0039] The method may include forming an intermediate layer between the material layer and the substrate.

[0040] The intermediate layer, the material layer, and the cover layer may be formed on the substrate by applying and heating a material for the intermediate layer, then applying and heating a material for the material layer, and then applying and heating a material for the cover layer.

[0041] The cover layer and the intermediate layer may comprise the same material.

[0042] The method may include forming at least one of an electron injection layer (EIL), an electron transport layer (ETL), an emission layer, a hole transport layer (HTL), and a hole injection layer (HIL) in the opening through an inkjet process.

[0043] According to the embodiment, a display device and a method of manufacturing the same can be provided which can efficiently form a light emitting element layer using an inkjet process. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 A cross-sectional view schematically illustrates a display device according to an embodiment.

[0045] Figure 2 A configuration (or a schematic cross-sectional view) is shown in which an inkjet material is retained within a barrier rib having hydrophobicity rather than overflowing due to the hydrophobicity of the barrier rib according to an embodiment.

[0046] Figure 3 is a picture showing overflow of an inkjet material due to a barrier rib not having hydrophobicity according to an embodiment.

[0047] Figure 4 is a picture showing that an inkjet material is not sufficiently spread because the barrier ribs are hydrophobic up to the sidewalls according to an embodiment.

[0048] Figure 5 A schematic cross-sectional view showing a display device according to an embodiment.

[0049] Figure 6 is a schematic top plan view of a display device according to an embodiment.

[0050] Figure 7 is taken along line VII-VII' according to the embodiment Figure 6 A cross-sectional view of a display device shown in FIG.

[0051] Figure 8 , Fig. 9 , Fig.10 , Fig.11 , Fig.12 and Fig.13 is a schematic cross-sectional view of a structure formed in a method for manufacturing a light emitting element layer of a display device according to an embodiment.

[0052] Fig.14 , Fig.15 and Fig.16 is a schematic cross-sectional view of a structure formed in a method for manufacturing a display device according to an embodiment. DETAILED DESCRIPTION

[0053] Exemplary embodiments have been described with reference to the accompanying drawings. As those skilled in the art will appreciate, the described embodiments can be modified in various different ways.

[0054] The drawings and description are to be regarded as illustrative in nature and not restrictive. Like reference numerals may refer to like elements.

[0055] In the drawings, the size and thickness of elements may be depicted for better understanding and ease of description. In the drawings, the thickness of layers, films, panels, regions, etc. may be exaggerated for clarity and / or ease of description.

[0056] Although the terms "first", "second", etc. can be used to describe various elements in the text, these elements should not be limited by these terms. These terms can be used to distinguish one element from another element. Therefore, without departing from the teaching of one or more embodiments, the first element can be referred to as the second element. Describing an element as a "first" element may not require or imply the existence of a second element or other elements. The terms "first", "second", etc. can also be used to distinguish different categories or groups of elements in the text. For simplicity, the terms "first", "second", etc. can represent "first class (or first group)", "second class (or second group)", etc. respectively.

[0057] When a first element is referred to as being "on" a second element, the first element may be directly on the second element, or one or more intervening elements may be present between the first element and the second element. When a first element is referred to as being "directly on" a second element, there are no intended intervening elements (other than environmental elements such as air) disposed between the first element and the second element. The term "on" or "above" means located on or below an object, and does not necessarily mean located on the upper side of an object based on the direction of gravity.

[0058] Unless explicitly described to the contrary, the word “comprise” and variations such as “comprises” or “comprising” may imply the inclusion of stated elements but not the exclusion of any other elements.

[0059] The term “connected” may mean “electrically connected”; the term “insulated” may mean “electrically isolated”; and the term “region” may mean “portion”.

[0060] Figure 1 and Figure 7 A display device according to an embodiment is schematically shown.

[0061] Reference Figure 1 and Figure 7 , the light-emitting display device according to the embodiment includes: a substrate 110, a thin film transistor TFT disposed on the substrate 110, a first electrode 191 connected to the thin film transistor TFT, a second electrode 270 overlapped with the first electrode 191, a barrier 380 and a light-emitting element layer 370, the barrier 380 and the light-emitting element layer 370 are disposed between the first electrode 191 and the second electrode 270, and an insulating layer 180 disposed between the thin film transistor TFT and the first electrode 191. The barrier 380 includes a first barrier 381 and a second barrier 382, ​​and fluorine is included in a region / portion of the second barrier 382 where the second barrier 382 and the second electrode 270 are adjacent to each other. The region / portion including fluorine in the second barrier 382 is an upper region, and a side region of the opening B of the barrier 380 (or the second barrier 382 and / or the first barrier 381) is not doped with fluorine.

[0062] The barrier rib 380 may have a thickness in the range of about 0.5 μm to about 2 μm in a direction perpendicular to the substrate 110. In the barrier rib 380, a region doped with fluorine may have a thickness in the range of about 10 nm to about 100 nm in a direction perpendicular to the substrate 110. In an example, a ratio of the region / portion doped with fluorine with respect to the thickness of the entire barrier rib 380 may be in the range of about 0.05% to about 20%.

[0063] The first barrier rib 381 and the second barrier rib 382 may include the same material or may include different materials. The first barrier rib 381 and the second barrier rib 382 may include a negative photoresist.

[0064] The hole injection layer, the hole transport layer, the emission layer, the electron transport layer, and the electron injection layer included in the light emitting element layer 370 in the display device may be formed by one or more inkjet processes.

[0065] In order to prevent the inkjet material from overflowing the barrier rib 380 during the inkjet process, the upper surface of the barrier rib 380 needs to be hydrophobic.

[0066] Figure 2 A configuration is shown in which the inkjet material 371 stays only in the opening of the barrier rib 380 due to the hydrophobicity of the barrier rib 380. The upper surface of the barrier rib 380 needs to be hydrophobic so that the light-emitting element layer is formed only in the opening of the barrier rib 380 during the inkjet process. However, if the side surface of the barrier rib 380 has (too much) hydrophobicity, the inkjet material 371 cannot be fully spread in the opening of the barrier rib 380.

[0067] Figure 3 is a picture showing overflow of inkjet material due to the upper surface of the barrier not having (sufficient) hydrophobicity, and Figure 4 is a picture showing that the inkjet material does not spread sufficiently due to the (excessive) hydrophobicity of the side surfaces of the barriers.

[0068] That is, the barrier needs to have appropriate hydrophobic and / or hydrophilic properties in order to allow the material to spread well and prevent spillage.

[0069] Reference Figure 1 and Figure 7 In the display device, the barrier 380 may include a double-layer structure, and since the upper area / portion is doped with fluorine, the upper area / portion of the second barrier 382 arranged thereon has hydrophobicity, and since the side surfaces of the first barrier 381 and the second barrier 382 are not doped with fluorine, the side surfaces of the first barrier 381 and the second barrier 382 may have hydrophilicity, and the side surfaces of the first barrier 381 and the second barrier 382 may define one or more boundaries of the opening B.

[0070] Therefore, the barrier 380 has hydrophilicity in the opening B, and has hydrophobicity in the upper area outside the opening B. When the various layers included in the light emitting element layer 370 are manufactured by one or more inkjet processes in the opening B of the barrier 380, the inkjet material spreads well in the opening B due to the hydrophilicity of the side surface of the barrier 380. Since the upper surface of the barrier 380 has hydrophobicity due to being doped with fluorine, the inkjet material can be prevented from overflowing. Therefore, the light emitting element layer 370 can be effectively manufactured by the one or more inkjet processes.

[0071] Figure 1 and Figure 7 The barrier rib 380 is shown to include the first barrier rib 381 and the second barrier rib 382, ​​but the barrier rib 380 may not include both the first barrier rib 381 and the second barrier rib 382. In an embodiment, if the upper surface of the barrier rib 380 has hydrophobicity by doping fluorine and the side surface of the opening has hydrophilicity, the barrier rib 380 may provide the same effect. Figure 5 A display device according to an embodiment is shown. Figure 5, the barrier 380 is provided as a single layer having a fluorine-doped top portion. The thickness of the fluorine-doped top portion may be in the range of about 0.05% to about 20% relative to the thickness of the entire barrier 380 in a direction perpendicular to the substrate 110, and may have sufficient hydrophobicity. The side surface of the barrier 380 defining the boundary of the opening B has hydrophilicity.

[0072] Figure 6 is a schematic top plan view of a display device according to an embodiment. Figure 7 It is taken along line VII-VII' Figure 6 sectional view of .

[0073] In the embodiment, an active matrix (AM) type light emitting display device is shown to have a 2 transistors-1 capacitor (2Tr-1Cap) structure in which two transistors (TFTs) and one capacitor are provided for each pixel of a display area.

[0074] In an embodiment, in a light-emitting display device, each pixel may be provided with three or more transistors and two or more capacitors, and may be formed to have various structures by further forming additional wiring. A pixel is the smallest unit for displaying an image, and a display area displays an image through a plurality of pixels.

[0075] Reference Figure 6 and Figure 7 , the light emitting display device includes: a switching thin film transistor T1, a driving thin film transistor T2, a capacitor C1, and an organic light emitting element E1, which are formed in each of a plurality of pixels on a substrate 110. A gate line 121 arranged along one direction, a data line 171 crossing the gate line 121 in an insulated manner, and a common power line 172 are arranged on the substrate 110. Here, each pixel may be defined by the boundaries of the gate line 121, the data line 171, and the common power line 172, but this is not restrictive.

[0076] The organic light emitting element E1 includes a first electrode 191 , a light emitting element layer 370 disposed on the first electrode 191 , and a second electrode 270 disposed on the light emitting element layer 370 .

[0077] In an embodiment, the first electrode 191 is a positive electrode, the first electrode 191 is a hole injection electrode, and the second electrode 270 is a negative electrode, the second electrode 270 is an electron injection electrode. In an embodiment, the first electrode 191 may be a negative electrode and the second electrode 270 may be a positive electrode, depending on the driving mode of the light emitting display device. The first electrode 191 may be a pixel electrode and the second electrode 270 may be a common electrode.

[0078] The light emitting element layer 370 may include at least one of a hole injection layer (HIL), a hole transport layer (HTL), an emission layer, an electron transport layer (ETL), and an electron injection layer (EIL). The emission layer may include an organic emission layer, and excitons generated by recombining injected holes and electrons transition from an excited state to a ground state to emit light. In an embodiment, the emission layer may include quantum dots.

[0079] The capacitor C1 includes a pair of capacitor plates 158 and 178 and an interlayer insulating layer 160 interposed between the capacitor plates 158 and 178. The interlayer insulating layer 160 serves as a dielectric member. The capacitance is determined by the charge charged in the capacitor C1 and the voltage between the pair of capacitor plates 158 and 178.

[0080] The switching thin film transistor T1 includes a switching semiconductor layer 151 , a switching gate electrode 122 , a switching source electrode 176 , and a switching drain electrode 177 . The driving thin film transistor T2 includes a driving semiconductor layer 155 , a driving gate electrode 124 , a driving source electrode 173 , and a driving drain electrode 175 .

[0081] The switching thin film transistor T1 is used as a switch to select a pixel for emitting light. The switching gate electrode 122 is connected to the gate line 121 and the switching source electrode 176 is connected to the data line 171. The switching drain electrode 177 is disposed to be separated from the switching source electrode 176 and is connected to one of a pair of capacitor plates 158 and capacitor plates 178 (e.g., capacitor plate 158).

[0082] The driving thin film transistor T2 applies driving power to the first electrode 191 for light emission of the light emitting element layer 370 of the organic light emitting element E1 in the selected pixel. The driving gate electrode 124 is connected to the capacitor plate 158, and the switching drain electrode 177 is connected to the capacitor plate 158. The driving source electrode 173 and the other capacitor plate 178 are respectively connected to the common power line 172.

[0083] The driving drain electrode 175 is connected to the first electrode 191 through the contact hole 185 .

[0084] Reference Figure 7 The buffer layer 111 is disposed on the substrate 110. The substrate 110 may be made of at least one of glass, quartz, ceramic, plastic, etc. The buffer layer 111 may be made of silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y Here, x and y may be in the range of 1 to 5, respectively.

[0085] The driving semiconductor layer 155 is disposed on the buffer layer 111. The driving semiconductor layer 155 may be made of at least one of various semiconductor materials such as a polysilicon layer, an amorphous silicon layer, etc. The driving semiconductor layer 155 may include a source region 152, a channel region 153, and a drain region 154.

[0086] A gate insulating layer 140 made of silicon nitride or silicon oxide is disposed on the driving semiconductor layer 155. A driving gate electrode 124 and a capacitor plate 158 are disposed on the gate insulating layer 140. In this case, the driving gate electrode 124 overlaps at least a portion of the driving semiconductor layer 155, specifically, the driving gate electrode 124 overlaps the channel region 153 of the driving semiconductor layer 155.

[0087] An interlayer insulating layer 160 covering the driving gate electrode 124 is disposed on the gate insulating layer 140. Similar to the gate insulating layer 140, the interlayer insulating layer 160 may be made of silicon nitride or silicon oxide. The gate insulating layer 140 and the interlayer insulating layer 160 include a first contact hole 163 and a second contact hole 165 exposing the source region 152 and the drain region 154 of the driving semiconductor layer 155.

[0088] The driving source electrode 173, the driving drain electrode 175, the data line 171, the common power line 172 and the capacitor plate 178 are disposed on the interlayer insulating layer 160. The driving source electrode 173 and the driving drain electrode 175 are connected to the source region 152 and the drain region 154 of the driving semiconductor layer 155 through the first contact hole 163 and the second contact hole 165, respectively.

[0089] An insulating layer 180 covering the driving source electrode 173 and the driving drain electrode 175 is disposed on the interlayer insulating layer 160. The insulating layer 180 may include a polyacrylic acid or polyimide organic material.

[0090] The insulating layer 180 includes a contact hole 185 . The first electrode 191 is disposed on the insulating layer 180 . The first electrode 191 may be a pixel electrode. The first electrode 191 is connected to the driving drain electrode 175 through the contact hole 185 .

[0091] The barrier 380 is disposed on the insulating layer 180. The barrier 380 includes a first barrier 381 and a second barrier 382, ​​and the upper region of the second barrier 382 is doped with fluorine. The region including fluorine in the second barrier 382 is the upper region, and the side region of the second barrier 382 is not doped with fluorine. Therefore, the upper region of the barrier 380 has hydrophobicity, and the side surface of the barrier 380 has hydrophilicity. Therefore, when the light emitting element layer 370 is formed in the opening of the barrier 380 using an inkjet process, while the inkjet material is spread well in the opening, the inkjet material can be prevented from overflowing the opening of the barrier 380.

[0092] The first barrier rib 381 and the second barrier rib 382 may include the same material or may include different materials. The sum of the height / thickness of the first barrier rib 381 and the height / thickness of the second barrier rib 382 in a direction perpendicular to the substrate 110 may be in the range of about 0.5 μm to about 2 μm. The thickness of the fluorine-doped region in the second barrier rib 382 may be in the range of about 10 nm to about 100 nm. For example, the ratio of the thickness of the fluorine-doped region to the thickness of the entire barrier rib 380 may be in the range of about 0.05% to about 20%.

[0093] In the drawings, the barrier rib 380 is shown as a multilayer including a first barrier rib 381 and a second barrier rib 382, ​​but as shown in FIG. Figure 5 As shown in , the barrier rib 380 may be provided as a single layer including a fluorine-doped portion. In an embodiment, an upper surface of the barrier rib 380 is doped with fluorine and a side surface of the barrier rib 380 has hydrophilicity.

[0094] The light emitting element layer 370 overlaps the first electrode 191, and the second electrode 270 overlaps the light emitting element layer 370. The light emitting element layer 370 may include at least one of a hole injection layer (HIL), a hole transport layer (HTL), an emission layer, an electron transport layer (ETL), and an electron injection layer (EIL). The second electrode 270 may be a common electrode. The organic light emitting element E1 includes the first electrode 191, the light emitting element layer 370, and the second electrode 270.

[0095] Figures 8 to 13 A cross-sectional view showing a structure formed in a process for manufacturing a light emitting element layer according to an embodiment. The key features focus on a method of manufacturing the barrier rib 380, and thus, the process for manufacturing the barrier rib 380 will be mainly described.

[0096] exist Figures 8 to 13 , the substrate 110, the first electrode 191 and the barrier rib 380 are schematically shown. Figure 7 As shown in , various structures including the driving thin film transistor T2 may be included between the first electrode 191 and the substrate 110 . Figure 6 and / or Figure 7 The elements and / or structures shown in the Figure 8 , Fig. 9 , Fig.10 , Fig.11 , Fig.12 and Fig.13 In the structure shown in one or more of the figures.

[0097] Reference Figure 8, the third layer 31 (or intermediate layer 31), the second layer 32 (or material layer 32) and the first layer 33 (or covering / protecting / sacrificial layer 33) are sequentially stacked on the thin film transistor display panel (including the substrate 110) formed with the first electrode 191. In an embodiment, the third layer 31 and the first layer 33 may include the same material and may have hydrophilicity. For example, the third layer 31 and the first layer 33 may include a negative photoresist (PR) layer.

[0098] The second layer 32 disposed between the third layer 31 and the first layer 33 includes fluorine. The upper region of the second layer 32 is doped with fluorine. The thickness of the fluorine-doped region in the second layer 32 may be in the range of about 10 nm to about 100 nm. The second layer 32 may also include the same negative photoresist (PR) material as the third layer 31 and the first layer 33. However, unlike the other layers, the upper region of the second layer 32 is doped with fluorine. Figure 8 , the third layer 31, the second layer 32 and the first layer 33 are sequentially stacked without openings. In an embodiment, the material of the third layer 31 is coated and soft-dried, the material of the second layer 32 is coated and soft-dried, and then the material of the first layer 33 is coated and soft-dried, so that each layer can be formed.

[0099] Next, refer to Fig. 9 The first layer 33, the second layer 32, and the third layer 31 are exposed and developed to form an opening B. The opening B is formed in a portion of the third layer 31, the second layer 32, and the first layer 33 overlapping the first electrode 191. The first electrode 191 is exposed by the opening B (at least partially).

[0100] When the third layer 31, the second layer 32, and the first layer 33 are developed to form the opening B, the first layer 33 disposed at the topmost portion is also partially etched, so that the thickness of the first layer 33 in the direction perpendicular to the substrate 110 is reduced. In addition, when the opening B is formed, residues of the third layer 31, the second layer 32, and the first layer 33 may remain instead of being completely removed. The residues are generated by an exposure and development process (e.g., using a photoresist and / or a mask).

[0101] Next, refer to Fig.10 , the photoresist residues of the third layer 31, the second layer 32 and the first layer 33 in the opening B are removed by plasma treatment. 2 , Ar, N 2 NF 3 and CF 4 At least one of the following is used to perform plasma treatment.

[0102] The photoresist residue in the opening B is removed by plasma treatment. The first layer 33 is substantially or completely removed by plasma treatment. Therefore, the second layer 32 doped with fluorine on its upper portion is exposed. The side surfaces of the remaining portions of the third layer 31 and the second layer 32 define the boundaries of the opening B and have hydrophilicity due to the plasma treatment. The remaining portions of the third layer 31 and the second layer 32 form the first barrier rib 381 and the second barrier rib 382.

[0103] That is, the fluorine-doped second layer 32 is exposed, and the barrier ribs 380 including the second barrier ribs 382 and the first barrier ribs 381 are formed by plasma treatment.

[0104] Next, refer to Fig.11 , the inkjet material 371 is dropped into the opening B of the barrier 380 using an inkjet process. Since the side surface of the barrier 380 is hydrophilic, the inkjet material 371 spreads well, but since the upper surface of the barrier 380 is hydrophobic, the inkjet material 371 does not overflow the opening B divided by the barrier 380. The inkjet material 371 may be a light emitting element layer material. That is, the inkjet material 371 may be / include at least one of an electron injection layer (EIL), an electron transport layer (ETL), an emission layer, a hole injection layer (HIL), and a hole transport layer (HTL).

[0105] Next, refer to Fig.12 , the light emitting element layer 370 is formed by heating the inkjet material 371. Fig.12 , only the light emitting element layer 370 is shown, but the light emitting element layer 370 may include an electron injection layer (EIL), an electron transport layer (ETL), an emission layer, a hole injection layer (HIL), and a hole transport layer (HTL), and each layer may be formed stepwise by a separate inkjet process. Since the solvent included in the inkjet material 371 is evaporated during the heating process, the light emitting element layer 370 may have a smaller volume than the discharged inkjet material 371.

[0106] Next, refer to Fig.13 , a second electrode 270 is formed on the light emitting element layer 370. The second electrode 270 may be a common electrode.

[0107] It has been described above that the barrier rib 380 is formed by exposure after the third layer 31, the second layer 32, and the first layer 33 are stacked, but in the embodiment, the third layer 31 may be unnecessary. That is, the second layer 32 including fluorine on its upper surface and the first layer 33 not including fluorine are deposited, and then the same as Figures 10 to 12 The same process as shown in , enables the manufacture of a display device.

[0108] Figures 14 to 16 The process shown in can be substituted Figures 8 to 10 The process shown in . Figures 14 to 16 , except that the lamination process of the third layer 31 is not performed, these processes are the same as those of the reference Figures 8 to 10 The process discussed is basically the same or similar to the reference Figures 8 to 10 The process of discussion.

[0109] In the manufacturing process of the barrier 380, when the opening of the barrier 380 is formed by an exposure and development process using a photoresist material, a plasma treatment is performed to remove the residue of the photoresist. When the plasma treatment is performed, the surface becomes hydrophilic, thereby eliminating the liquid repellency caused by hydrophobicity. If the first layer 33 disposed at the top is doped with fluorine, the hydrophobic effect (due to doping with fluorine) may be lost in the exposure / development process and the plasma treatment, and the hydrophilic property may be caused by the exposure / development process and the plasma treatment. As a result, when the light-emitting element layer 370 is formed by an inkjet process in the opening of the light-emitting display device including the hydrophilic barrier 380, the inkjet material may overflow the opening of the barrier 380.

[0110] However, according to an embodiment, the barrier rib 380 is formed using a multi-layer structure (including a capping layer), and the second layer 32 disposed in the middle is doped with fluorine in the manufacturing process. Therefore, during the plasma treatment process, only the first layer 33 disposed on the top is completely or substantially removed, and the second layer 32 is protected by the first layer 33, thereby maintaining the hydrophobicity due to the doping with fluorine.

[0111] In addition, the side surface of the third layer 31 and the side surface of the second layer 32 have hydrophilicity due to the plasma treatment, so that the inkjet material spreads well in the opening B.

[0112] As described, according to the embodiment, the barrier 380 is formed using a multilayer structure (including a capping layer), and then the barrier 380 is etched to form an opening, and then the fluorine-doped portion of the layer disposed in the middle of the multilayer structure is exposed, so that even in the case of plasma treatment, the upper surface of the barrier 380 can still maintain hydrophobicity. That is, the barrier 380 whose upper surface has hydrophobicity and the side surface of the opening B has hydrophilicity can be provided. Therefore, when the light emitting element layer is formed by the inkjet process, the injected material can fully fill the opening B, and the inkjet material may not overflow the barrier 380.

[0113] Although exemplary embodiments have been described, actual implementations are not limited to the described embodiments. Embodiments are intended to cover various modifications and equivalent arrangements within the spirit and scope defined by the appended claims.

Claims

1. A display device, comprising: substrate; A thin film transistor is disposed on the substrate; A first electrode electrically connected to the thin film transistor; a second electrode, overlapping the first electrode; as well as a barrier having a first portion and a second portion, wherein the first portion is not doped with fluorine, the second portion is disposed between the first portion and the second electrode, and a top surface of the second portion directly contacting the second electrode is doped with fluorine, wherein the side surfaces of the first portion and the second portion are portions of the opening boundaries of the barrier rib, and the side surfaces are hydrophilic except for the upper region of the second portion doped with fluorine, and Wherein, the opening of the barrier is arranged between the first electrode and the second electrode.

2. The display device according to claim 1, wherein: The upper region of the second portion doped with fluorine has a thickness in a direction perpendicular to the substrate in a range of 10 nm to 100 nm.

3. The display device according to claim 1, wherein: A ratio of a thickness of the upper region of the second portion doped with fluorine in a direction perpendicular to the substrate relative to a thickness of the barrier rib in a direction perpendicular to the substrate is in a range of 0.05% to 20%.

4. The display device according to claim 1, wherein: The first portion and the second portion include the same material.

5. The display device according to claim 1, wherein: The first portion includes a first material, and wherein the second portion includes a second material different from each of fluorine and the first material.

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