Display Devices

Abstract

The display device includes a substrate and a plurality of pixels located in a display area of ​​the substrate. Each of the pixels includes a first sub-pixel and a second sub-pixel, and each of the first sub-pixel and the second sub-pixel has a light-emitting area for emitting light. The first sub-pixel includes a first light-emitting element located in the light-emitting area and configured to emit visible light. The second sub-pixel includes a second light-emitting element located in the light-emitting area and configured to emit infrared light and a light-receiving element configured to receive infrared light emitted from the second light-emitting element to detect a user's touch. The second light-emitting element and the light-receiving element in the second sub-pixel are optically coupled to each other to form an optical coupler.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2018-0017681, filed on February 13, 2018, in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference. Technical Field

[0003] Aspects of exemplary embodiments of the present invention relate to a display device. Background Art

[0004] Light emitting diodes (hereinafter referred to as LEDs) exhibit relatively good durability even under adverse environmental conditions and have excellent performance in terms of lifespan and brightness.

[0005] In recent years, research into applying LEDs to various display devices has been actively conducted.

[0006] As part of this research, technology is being developed to make ultra-small rod-shaped LEDs at the micrometer or nanometer scale using inorganic crystal structures (e.g., structures in which nitride-based semiconductors are grown). For example, the rod-shaped LEDs can be made small enough to constitute pixels of self-emissive display devices, etc. Summary of the invention

[0007] One or more embodiments of the present invention provide a display device including a rod-shaped LED and having an improved touch recognition rate.

[0008] According to an embodiment of the present invention, a display device includes a substrate and a plurality of pixels located in a display area of ​​the substrate. Each of the pixels includes a first sub-pixel and a second sub-pixel, and each of the first sub-pixel and the second sub-pixel has a light-emitting area for emitting light. The first sub-pixel includes a first light-emitting element located in the light-emitting area and configured to emit visible light. The second sub-pixel includes a second light-emitting element located in the light-emitting area and configured to emit infrared light and a light-receiving element configured to receive infrared light emitted from the second light-emitting element to detect a user's touch. The second light-emitting element and the light-receiving element in the second sub-pixel are optically coupled to each other to form an optical coupler.

[0009] The second light emitting element may include a rod-shaped light emitting diode configured to emit infrared light, and the light receiving element may include a photodiode configured to receive infrared light.

[0010] The first light emitting element may emit one of red light, green light, blue light, and white light.

[0011] Each of the first sub-pixel and the second sub-pixel may include a transistor on a substrate.

[0012] The transistor may include: a semiconductor layer located on a substrate; a gate electrode located on the semiconductor layer with a gate insulating layer therebetween; and a source electrode and a drain electrode connected to the semiconductor layer.

[0013] The light receiving element may be configured to detect infrared light emitted from the second light emitting element and reflected from the user's finger, and may convert the detected infrared light into an electric signal.

[0014] The second sub-pixel may further include a readout line for receiving an electrical signal of the light receiving element.

[0015] Each of the first light emitting element, the second light emitting element and the light receiving element may include: a first conductive semiconductor layer doped with a first conductive dopant; a second conductive semiconductor layer doped with a second conductive dopant; and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer.

[0016] Each of the first light emitting element and the second light emitting element may include a light emitting diode having a cylindrical column shape or a polygonal column shape having a micrometer-scale or nanometer-scale size.

[0017] The display device may further include: an insulating layer on the substrate, the second light emitting element, and the light receiving element; and a protective layer on the insulating layer.

[0018] The display device may further include a light blocking pattern on the insulating layer in the second subpixel. The light blocking pattern may have a first opening exposing a portion of the insulating layer corresponding to the second light emitting element and a second opening exposing a portion of the insulating layer corresponding to the light receiving element.

[0019] The light blocking pattern may block infrared light emitted from the second light emitting element from being incident on a first sub-pixel adjacent to the second sub-pixel.

[0020] The display apparatus may further include a light extraction layer on the protective layer, and the light extraction layer may be configured to condense light incident on the light receiving element.

[0021] The light extraction layer may include a lens portion corresponding to the light receiving element.

[0022] The display device may further include a light blocking pattern on the protective layer in the second subpixel. The light blocking pattern may have a first opening exposing a portion of the protective layer corresponding to the second light emitting element and a second opening exposing a portion of the protective layer corresponding to the light receiving element.

[0023] The light blocking pattern may not be located in the first sub-pixel.

[0024] Each of the second light emitting element and the light receiving element may have a first end and a second end in the longitudinal direction. The second end of the second light emitting element and the first end of the light receiving element may face each other on the substrate.

[0025] The display device may also include: a 1-1 electrode located on the substrate and adjacent to the first end of the second light-emitting element; a second electrode located on the same plane as the 1-1 electrode and between the second end of the second light-emitting element and the first end of the light-receiving element; a 1-2 electrode located on the same plane as the second electrode and adjacent to the second end of the light-receiving element; a 1-1 contact electrode electrically connected to the 1-1 electrode and the first end of the second light-emitting element; a 1-2 contact electrode electrically connected to the 1-2 electrode and the second end of the light-receiving element; and a second contact electrode electrically connected to the second end of the second light-emitting element and the first end of the light-receiving element.

[0026] The second contact electrode may be located in a different layer from the 1-1th contact electrode and the 1-2th contact electrode.

[0027] When viewed in a plan view, the light blocking pattern may overlap the 1-1th contact electrode, the 1-2th contact electrode, and the second contact electrode.

[0028] The display device may also include: a 1-1 electrode located on the substrate and adjacent to a first end of a second light-emitting element; a 2-1 electrode located on the same plane as the 1-1 electrode and adjacent to a second end of the second light-emitting element; a 2-2 electrode located on the same plane as the 2-1 electrode and adjacent to a first end of the light-receiving element; a 1-2 electrode located on the same plane as the 2-2 electrode and adjacent to a second end of the light-receiving element; a 1-1 contact electrode electrically connected to the 1-1 electrode and a first end of the second light-emitting element; a 1-2 contact electrode electrically connected to the 1-2 electrode and a second end of the light-receiving element; a 2-1 contact electrode electrically connected to the second end of the second light-emitting element and the 2-1 electrode; and a 2-2 contact electrode electrically connected to the first end of the light-receiving element and the 2-2 electrode.

[0029] The 2-1st contact electrode and the 2-2nd contact electrode may be spaced apart from each other on the substrate and located on the same layer.

[0030] According to another embodiment of the present invention, a display device includes: a substrate having a display area and a non-display area; a plurality of pixels located in the display area of ​​the substrate. Each of the pixels includes a first sub-pixel to a fourth sub-pixel, and each of the first sub-pixel to the fourth sub-pixel has a light-emitting area for emitting light. Each of the first sub-pixel to the third sub-pixel includes a first light-emitting element located in a corresponding light-emitting area and configured to emit visible light, and the fourth sub-pixel includes a second light-emitting element located in the light-emitting area and configured to emit infrared light and a light-receiving element configured to receive infrared light emitted from the second light-emitting element to detect a user's touch. The display device also includes: an insulating layer located on the first light-emitting element, the second light-emitting element, and the light-receiving element; and a light-blocking pattern located on the insulating layer in the fourth sub-pixel and having a first opening exposing a portion of the insulating layer corresponding to the second light-emitting element and a second opening exposing a portion of the insulating layer corresponding to the light-receiving element. The second light-emitting element and the light-receiving element are optically coupled to each other to form an optical coupler.

[0031] The second light emitting element may include a rod-shaped light emitting diode configured to emit infrared light, and the light receiving element may include a photodiode configured to receive infrared light.

[0032] The light blocking pattern may block infrared light emitted from the second light emitting element from being incident on first to third sub-pixels adjacent to the fourth sub-pixel.

[0033] The light blocking pattern may not be provided in the first to third sub-pixels. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The accompanying drawings illustrate exemplary embodiments of the present invention and, together with the description, describe aspects and features of the present invention. The accompanying drawings are included to provide a further understanding of the present invention and are incorporated in and constitute a part of this specification.

[0035] Figure 1 is a perspective view showing a rod-shaped light emitting diode according to an embodiment of the present invention.

[0036] Figure 2A and Figure 2B is a circuit diagram showing a unit light emitting area of ​​a light emitting device according to an embodiment of the present invention.

[0037] Figure 3 It is shown that Figure 1 A plan view of a unit light emitting area of ​​a light emitting device of a rod-shaped light emitting diode shown in FIG.

[0038] Figure 4 It is along Figure 3 A cross-sectional view taken along line II′.

[0039] Figure 5 According to an embodiment of the present invention, Figure 1 Schematic plan view of a display device using rod-shaped LEDs as light sources.

[0040] Figure 6 It is shown Figure 5 Schematic plan view of first to fourth sub-pixels included in one pixel shown in .

[0041] Figure 7 It is shown Figure 6 A schematic circuit diagram of an optical coupler included in a fourth sub-pixel shown in FIG.

[0042] Figure 8 It is along Figure 6 Cross-sectional views taken along lines II-II′ and III-III′.

[0043] Figures 9 to 16 It is shown in sequence that the manufacturing Figure 8 0 is a cross-sectional view of a fourth sub-pixel as shown in FIG.

[0044] Fig.17 It is along Figure 6 1 is a cross-sectional view taken along line III-III′ of FIG. 1 and illustrates a display device according to another embodiment of the present invention.

[0045] Fig.18 It is along Figure 6 1 is a cross-sectional view taken along line III-III′ of FIG. 1 and illustrates a display device according to another embodiment of the present invention.

[0046] Fig.19 It is along Figure 6 1 is a cross-sectional view taken along line III-III′ of FIG. 1 and illustrates a display device according to another embodiment of the present invention. DETAILED DESCRIPTION

[0047] Reference will now be made in detail to various exemplary (or illustrative) embodiments of the present invention shown in the accompanying drawings and described below. Embodiments of the present invention may be variously modified in many different forms. Therefore, these exemplary embodiments are not intended to limit the present invention to a specific implementation mode, and it is to be understood that all changes, equivalents and substitutions that do not depart from the spirit and technical scope of the present invention are covered by the present invention.

[0048] In all different drawings and embodiments of the present invention, the same reference numerals represent the same elements. For the clarity of illustration, the size of the elements in the drawings may be enlarged. It should be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. For example, without departing from the present invention, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element. In the present disclosure, unless the context clearly indicates otherwise, the singular form is intended to also include the plural form.

[0049] It should also be understood that the terms "comprising", "including", "having", etc., when used in this specification, indicate the presence of the features, wholes, steps, operations, elements, components and / or combinations thereof, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or combinations thereof. In addition, when a first component (such as a layer, film, region or plate) is disposed on a second component, the first component may not only be directly located on the second component, but a third component may be inserted between them. When it is stated that a first component (such as a layer, film, region or plate) is formed on a second component, the surface of the second component on which the first component is formed is not limited to the upper surface of the second component, but may include other surfaces, such as the side surface or lower surface of the second component. When a first component (such as a layer, film, region or plate) is located below a second component, the first component may not only be directly below the second component, but a third component may be inserted between them.

[0050] It should be understood that when an element or layer is referred to as being on, connected to or coupled to another element or layer, it may be directly on, connected to or coupled to the other element or layer, or one or more intervening elements or layers may also be present. When an element or layer is referred to as being directly on, directly connected to or directly coupled to another element or layer, there is no intervening element or layer. For example, when a first element is referred to as being coupled to or coupled to a second element, the first element may be directly coupled to or coupled to the second element, or the first element may be indirectly coupled to or coupled to the second element via one or more intervening elements. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0051] As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. In addition, when describing embodiments of the present invention, the use of "may" refers to "one or more embodiments of the present invention." Expressions such as "at least one of" modify the entire list of elements when following a list of elements, without modifying the individual elements in the list. In addition, the term "exemplary" is intended to represent an example or illustration. As used herein, the terms "use," "using," and "used" may be considered synonymous with the terms "utilize," "utilizing," and "utilized," respectively.

[0052] For ease of description, spatially relative terms such as "below", "beneath", "lower", "above", "upper", etc. may be used herein to describe the relationship of one element or feature to another element (or elements) or another feature (or features) as shown in the drawings. It should be understood that in addition to the orientations depicted in the drawings, the spatially relative terms are intended to cover different orientations of the device in use or operation. For example, if the device in the drawings is flipped, the elements described as being "below" or "below" other elements or features will be oriented to be "above" or "on" the other elements or features. Therefore, the term "below" can cover both the above and below orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0053] Figure 1 is a perspective view showing a rod-shaped light emitting diode according to an embodiment of the present invention. Figure 1 , a rod-shaped light emitting diode LD having a cylindrical column shape is shown, but the present invention is not limited thereto.

[0054] refer to Figure 1 , the rod-shaped light emitting diode LD according to the embodiment of the present invention may include a first conductive semiconductor layer 11, a second conductive semiconductor layer 13, and an active layer 12 disposed between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13. For example, the rod-shaped light emitting diode LD may be formed as a laminate in which the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 are sequentially stacked. In the following embodiments, the rod-shaped light emitting diode LD is referred to as a "rod-shaped LED LD".

[0055] According to an embodiment of the present invention, the rod-shaped LED LD may have a rod shape extending in one direction. When the extending direction of the rod-shaped LED LD is a longitudinal direction, the rod-shaped LED LD may have one end and the other end along the extending direction. According to an embodiment of the present invention, one of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be disposed at one end of the rod-shaped LED LD, and the other of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be disposed at the other end of the rod-shaped LED LD.

[0056] In an embodiment of the present invention, the rod-shaped LED LD may have a cylindrical column shape, but the present invention is not limited thereto. The term "rod-shaped" may include a rod shape or a bar shape extending in a longitudinal direction and having an aspect ratio greater than 1, such as a cylindrical column, a polygonal column, etc. For example, the length of the rod-shaped LED LD may be greater than its diameter.

[0057] For example, the rod-shaped LED LD may be manufactured to have a small size, for example, a diameter and / or length of approximately micrometer or nanometer order. The size of the rod-shaped LED LD according to the embodiment of the present invention is not limited thereto and may vary according to the display device to which the rod-shaped LED LD is applied.

[0058] The first conductive semiconductor layer 11 may include an N-type semiconductor layer. For example, the first conductive semiconductor layer 11 may include one of the following semiconductor materials, including indium aluminum gallium nitride (InAlGaN), gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum nitride (AlN), indium nitride (InN), etc., and the first conductive semiconductor layer 11 may be doped with a first conductive dopant such as silicon (Si), germanium (Ge), tin (Sn), etc. However, the first conductive semiconductor layer 11 is not limited thereto, and the first conductive semiconductor layer 11 may include various other suitable materials.

[0059] The active layer 12 may be disposed on the first conductive semiconductor layer 11 and may have a single or multiple quantum well structure. The active layer 12 may include AlGaN, InAlGaN, or the like.

[0060] According to an embodiment of the present invention, a clad layer doped with a conductive dopant may be disposed on an upper portion and / or a lower portion of the active layer 12. The clad layer may include AlGaN, InAlGaN, or the like.

[0061] When an electric field exceeding a threshold voltage is applied across the rod-shaped LED LD (eg, applied to both ends thereof), electron-hole pairs are generated in the active layer 12 so that the rod-shaped LED LD emits light.

[0062] The second conductive semiconductor layer 13 may be disposed on the active layer 12, and may include a semiconductor layer of a different type from the first conductive semiconductor layer 11. For example, the second conductive semiconductor layer 13 may include a P-type semiconductor layer. The second conductive semiconductor layer 13 may include at least one of the following semiconductor materials, including: InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, and the second conductive semiconductor layer 13 may be doped with a second conductive dopant such as magnesium (Mg), etc. The second conductive semiconductor layer 13 is not limited thereto, and the second conductive semiconductor layer 13 may include various other suitable materials.

[0063] According to an embodiment of the present invention, the rod-shaped LED LD may include at least one of a phosphor layer, an active layer, a semiconductor layer and an electrode layer disposed on an upper portion and / or a lower portion of each of the first conductive semiconductor layer 11 , the active layer 12 and the second conductive semiconductor layer 13 .

[0064] In addition, the rod-shaped LED LD may further include an insulating layer 14. The insulating layer 14 may be disposed on a portion of the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13. For example, the insulating layer 14 may be disposed at a portion other than both ends of the rod-shaped LED LD so that both ends of the rod-shaped LED LD are exposed.

[0065] exist Figure 1 In the figure, a part of the insulating layer 14 is shown as being removed, but this is for illustration only. In some embodiments, the entire side surface (eg, the entire side surface) of the rod-shaped LED LD may be covered (or surrounded) by the insulating layer 14.

[0066] The insulating layer 14 may be disposed to cover (or surround) at least a portion of the outer surface of the first conductive semiconductor layer 11, the active layer 12 and / or the second conductive semiconductor layer 13. For example, the insulating layer 14 may be disposed to surround at least the outer surface of the active layer 12.

[0067] The insulating layer 14 may include a transparent insulating material. For example, the insulating layer 14 may include a silicon oxide (eg, SiO 2 ), silicon nitrides (e.g., Si 3 N 4 ), aluminum oxides (e.g., Al 2 O 3 ) and titanium oxides (e.g., TiO 2 ) is selected from the group consisting of at least one insulating material. However, the present invention is not limited thereto, and various other suitable insulating materials may be used.

[0068] When the insulating layer 14 is disposed on the rod-shaped LED LD, the active layer 12 may not be short-circuited with the first electrode and / or the second electrode (to be further described below). In addition, surface defects in the rod-shaped LED LD may be reduced or minimized by the insulating layer 14, so that the life and efficiency of the rod-shaped LED LD may be improved. When a plurality of rod-shaped LEDs LD are disposed adjacent to each other, the insulating layer 14 may prevent an undesired short circuit from occurring between the rod-shaped LEDs LD.

[0069] The rod-shaped LED LD can be used as a light source for various display devices. For example, the rod-shaped LED LD can be used as a light source for a lighting device or a self-emitting display device.

[0070] Figure 2A and Figure 2B is a circuit diagram showing a unit light emitting area of ​​a light emitting device according to an embodiment of the present invention.

[0071] Specifically, Figure 2A and Figure 2B An example of a pixel of an active matrix (eg, active type) light emitting display panel is shown. In an embodiment of the present invention, a unit light emitting region may include one pixel.

[0072] refer to Figure 2A , the pixel PXL may include a rod-shaped LED LD and a pixel circuit 144 connected to the rod-shaped LED LD.

[0073] A first electrode (eg, an anode electrode) of the rod-shaped LED LD may be connected to a first power source ELVDD via the pixel circuit 144 , and a second electrode (eg, a cathode electrode) of the rod-shaped LED LD may be connected to a second power source ELVSS.

[0074] The first power source ELVDD and the second power source ELVSS may have different voltage levels. For example, the second power source ELVSS may have a voltage level lower than the voltage level of the first power source ELVDD by at least a threshold voltage of the rod-shaped LED LD.

[0075] The rod-shaped LED LD may emit light having brightness corresponding to a driving current controlled by the pixel circuit 144 .

[0076] Although Figure 2A An embodiment in which the pixel PXL includes only one rod-shaped LED LD is shown, but the present invention is not limited thereto. For example, the pixel PXL may include a plurality of rod-shaped LED LDs connected in parallel to each other.

[0077] According to an embodiment of the present invention, the pixel circuit 144 may include a first transistor M1, a second transistor M2 and a storage capacitor Cst. However, the structure of the pixel circuit 144 is not limited to Figure 2AThe embodiment shown in .

[0078] A first electrode of a first transistor M1 (e.g., a switch transistor) may be connected to a data line Dj, and a second electrode of the first transistor M1 may be connected to a first node N1. The first electrode and the second electrode of the first transistor M1 may be different electrodes. For example, the first electrode may be a source electrode, and the second electrode may be a drain electrode. In addition, a gate electrode of the first transistor M1 may be connected to a scan line Si.

[0079] The first transistor M1 may be turned on when a scan signal having a voltage (e.g., a low voltage) capable of turning on the first transistor M1 is supplied from the scan line Si, and may electrically connect the data line Dj and the first node N1. A data signal of a corresponding frame is supplied to the data line Dj so that the data signal is transmitted to the first node N1. A voltage corresponding to the data signal transmitted to the first node N1 is charged into the storage capacitor Cst.

[0080] A first electrode of the second transistor M2 (e.g., a driving transistor) may be connected to the first power source ELVDD, and a second electrode of the second transistor M2 may be connected to the first electrode of the rod-shaped LED LD. A gate electrode of the second transistor M2 may be connected to the first node N1. The second transistor M2 may control the amount of driving current supplied to the rod-shaped LED LD corresponding to the voltage of the first node N1.

[0081] One electrode of the storage capacitor Cst may be connected to the first power source ELVDD, and the other electrode of the storage capacitor Cst may be connected to the first node N1. The storage capacitor Cst may load a voltage corresponding to the data signal supplied to the first node N1, and may maintain the loaded voltage until a data signal of the next frame is supplied.

[0082] For convenience, Figure 2A The pixel circuit 144 is shown as having a relatively simple structure, which includes a first transistor M1 for transmitting a data signal to the pixel PXL, a storage capacitor Cst for storing the data signal, and a second transistor M2 for supplying a driving current corresponding to the data signal to the rod-shaped LED LD. However, the present invention is not limited thereto, and the structure of the pixel circuit 144 may be modified in various appropriate ways. For example, the pixel circuit 144 may also include a transistor element and / or other circuit elements, such as a transistor element for compensating for a threshold voltage of the second transistor M2, a transistor element for initializing the first node N1, a transistor element for controlling the light emission time of the rod-shaped LED LD, and other circuit elements such as a boost capacitor for boosting the voltage at the first node N1.

[0083] like Figure 2AAs shown in , all transistors (such as the first transistor M1 and the second transistor M2) included in the pixel circuit 144 are P-type transistors, but the present invention is not limited thereto. In other embodiments, at least one of the first transistor M1 and the second transistor M2 included in the pixel circuit 144 can be replaced by an N-type transistor.

[0084] refer to Figure 2B According to an embodiment of the present invention, the first transistor M1 and the second transistor M2 may be implemented as N-type transistors. In addition to the connection of some components being changed due to the change of transistor type, Figure 2B The pixel circuit 144 shown in FIG. 1 is similar in configuration and operation to the pixel circuit 144 shown in FIG.

[0085] Figure 2A 1 is similar to the pixel circuit 144 shown in . Therefore, a repeated detailed description thereof will be omitted.

[0086] Figure 3 It is shown that Figure 1 A plan view of a unit light emitting area of ​​a light emitting device of a rod-shaped LED LD shown in FIG. 1 , and Figure 4 It is along Figure 3 A cross-sectional view taken along line II′.

[0087] exist Figure 3 In the embodiment, although the rod-shaped LEDs LD are shown to be aligned in the horizontal direction for convenience of illustration, the arrangement of the rod-shaped LEDs LD is not limited thereto. For example, the rod-shaped LEDs LD may be aligned in an oblique direction between the first electrode and the second electrode.

[0088] exist Figure 3 In the embodiment, the unit light emitting region may be a pixel region of the light emitting display panel including one pixel PX. Figure 3 An embodiment in which one rod-shaped LED LD is disposed in the unit light emitting region is shown, but the present invention is not limited thereto. For example, a plurality of rod-shaped LED LDs may be disposed in the unit light emitting region.

[0089] refer to Figures 1 to 4 , the light emitting device according to the embodiment of the present invention may include a substrate SUB, a partition wall PW, first and second electrodes EL1 and EL2, a rod-shaped LED LD, and first and second contact electrodes CNE1 and CNE2.

[0090] The substrate SUB may include an insulating material such as glass, an organic polymer, quartz, etc. In addition, the substrate SUB may be made of a flexible material so as to be bendable or foldable, and may have a single-layer structure or a multi-layer structure.

[0091] For example, the substrate SUB may include at least one material selected from the group consisting of polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate. However, the substrate SUB may be variously modified as appropriate.

[0092] The partition wall PW may be provided on the substrate SUB and may define a light emitting area of ​​the light emitting device. Two partition walls PW adjacent to each other may be spaced apart from each other by a certain distance (e.g., a predetermined distance) on the substrate SUB. For example, two adjacent partition walls PW may be spaced apart by the length of the rod-shaped LED LD or more on the substrate SUB. The partition wall PW may be an insulating material including an inorganic material or an organic material, but the present invention is not limited thereto. The partition wall PW may have an opening corresponding to the rod-shaped LED LD.

[0093] The first electrode EL1 and the second electrode EL2 may be disposed on the partition wall PW. When viewed in a plan view, the first electrode EL1 and the second electrode EL2 may be disposed on the substrate SUB and spaced apart from each other with the rod-shaped LED LD interposed therebetween. The first electrode EL1 and the second electrode EL2 may be disposed on the same plane and may have the same height (e.g., the same height above the substrate SUB). When the first electrode EL1 and the second electrode EL2 have the same or substantially the same height (e.g., the same or substantially the same height above the substrate SUB), the rod-shaped LED LD may be more stably connected to the first electrode EL1 and the second electrode EL2.

[0094] The first electrode EL1 and the second electrode EL2 may include a conductive material. The conductive material may include: a metal such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) or an alloy thereof; a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium tin zinc oxide (ITZO); a conductive polymer such as PEDOT, etc. In addition, each of the first electrode EL1 and the second electrode EL2 may be formed as a single layer, but the present invention is not limited thereto. In some embodiments, each of the first electrode EL1 and the second electrode EL2 may be formed as a multilayer structure in which a plurality of metals, alloys, conductive oxides and / or conductive polymers are stacked. The first electrode EL1 and the second electrode EL2 are not limited to the above materials. For example, the first electrode EL1 and the second electrode EL2 may be made of a conductive material having a constant or substantially constant reflectivity so that light emitted from all sides (e.g., both ends) of the rod-shaped LED LD propagates in a direction in which an image is displayed (e.g., in front).

[0095] For the sake of illustration, Figure 4 It is shown that the first electrode EL1 and the second electrode EL2 are directly disposed on the substrate SUB including the partition wall PW. However, the present invention is not limited thereto. For example, a component for driving a light emitting device as a passive matrix light emitting device or an active matrix light emitting device may be further disposed between the first electrode EL1 and the second electrode EL2 and the substrate SUB. When the light emitting device is driven as an active matrix, a signal line, an insulating layer and / or a transistor may be disposed between the first electrode EL1 and the second electrode EL2 and the substrate SUB.

[0096] The signal line may include a scan line, a data line, a power line, etc. The transistor may be connected to the signal line and may include a gate electrode, a semiconductor layer, a source electrode, and a drain electrode.

[0097] One of the source electrode and the drain electrode of the transistor can be connected to one of the first electrode EL1 and the second electrode EL2, and the data signal of the data line can be applied to one of the first electrode EL1 and the second electrode EL2 through the transistor. The signal line, the insulating layer and / or the transistor can be provided in various suitable numbers and shapes.

[0098] In an embodiment of the present invention, the first electrode EL1 may be connected to a first connection line CNL1. The first connection line CNL1 may be integrally provided with the first electrode EL1 and may extend along a first direction DR1 when viewed in a plan view. When the light emitting device is driven as an active matrix light emitting device, the first connection line CNL1 is electrically connected to one electrode of the transistor to electrically connect the first electrode EL1 and the transistor.

[0099] The second electrode EL2 may be connected to a second connection line CNL2. The second connection line CNL2 may be integrally provided with the second electrode EL2 and may extend along the first direction DR1. The second connection line CNL2 may be electrically connected to the driving voltage line DVL through a contact opening (e.g., a contact hole). Therefore, a signal of the driving voltage line DVL may be applied to the second electrode EL2 through the second connection line CNL2. When viewed in a plan view, the driving voltage line DVL may extend along the second direction DR2.

[0100] The rod-shaped LED LD may be disposed between the first electrode EL1 and the second electrode EL2 on the substrate SUB. The rod-shaped LED LD may be self-aligned by an electric field formed between the first electrode EL1 and the second electrode EL2. The rod-shaped LED LD may have a rod shape extending in the first direction DR1 (eg, aligned in the first direction DR1).

[0101] The rod-shaped LED LD may include a first conductive semiconductor layer 11, an active layer 12, and a second conductive semiconductor layer 13. The rod-shaped LED LD may have a first end portion EP1 and a second end portion EP2 along a first direction DR1. One of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be disposed at the first end portion EP1, and the other of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be disposed at the second end portion EP2.

[0102] The first insulating layer INS1 may be disposed on the rod-shaped LED LD to cover a portion of an upper surface of the rod-shaped LED LD. The first end portion EP1 and the second end portion EP2 of the rod-shaped LED LD may be exposed to the outside (eg, exposed through the first insulating layer INS1).

[0103] The first contact electrode CNE1 may be disposed on the first electrode EL1 so as to electrically and / or physically connect the first electrode EL1 and the first end portion EP1 of the rod-shaped LED LD.

[0104] The first contact electrode CNE1 may include a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide (ITZO) to transmit light emitted from the rod-shaped LED LD, but the present invention is not limited thereto. The first contact electrode CNE1 may cover the first electrode EL1 and may overlap the first electrode EL1 when viewed in a plan view. In addition, the first contact electrode CNE1 may partially overlap the first end portion EP1 of the rod-shaped LED LD.

[0105] The second insulating layer INS2 may be disposed on the first contact electrode CNE1 to cover the first contact electrode CNE1. The second insulating layer INS2 prevents the first contact electrode CNE1 from being exposed to the outside, thereby reducing or preventing corrosion of the first contact electrode CNE1. The second insulating layer INS2 may include one of an inorganic insulating material and an organic insulating material.

[0106] The second contact electrode CNE2 may be disposed on the second electrode EL2 so as to electrically and / or physically connect the second electrode EL2 with the second end portion EP2 of the rod-shaped LED LD.

[0107] The second contact electrode CNE2 may be formed of the same or substantially similar material as the first contact electrode CNE1, but the present invention is not limited thereto. The second contact electrode CNE2 may cover the second electrode EL2 and may overlap the second electrode EL2 when viewed in a plan view. In addition, the second contact electrode CNE2 may partially overlap the second end portion EP2 of the rod-shaped LED LD.

[0108] The third insulating layer INS3 may be disposed on the second contact electrode CNE2 to cover the second contact electrode CNE2. The third insulating layer INS3 prevents the second contact electrode CNE2 from being exposed to the outside, thereby reducing or preventing corrosion of the second contact electrode CNE2. The third insulating layer INS3 may include one of an inorganic insulating material and an organic insulating material.

[0109] The protective layer OC may be disposed on the third insulating layer INS3. The protective layer OC may be a planarization layer that flattens surface roughness caused by components located below. In addition, the protective layer OC may be an encapsulation layer that reduces or prevents oxygen and moisture from penetrating into the rod-shaped LED LD.

[0110] As described above, the first end EP1 of the rod-shaped LED LD may contact the first electrode EL1, and the second end EP2 of the rod-shaped LED LD may contact the second electrode EL2. For example, the first conductive semiconductor layer 11 of the rod-shaped LED LD may contact the first electrode EL1, and the second conductive semiconductor layer 13 of the rod-shaped LED LD may contact the second electrode EL2.

[0111] Therefore, the first and second conductive semiconductor layers 11 and 13 of the rod-shaped LED LD may receive voltages through the first and second electrodes EL1 and EL2, respectively.

[0112] When an electric field exceeding a threshold voltage is applied to the first and second end portions EP1 and EP2 of the rod-shaped LED LD, the rod-shaped LED LD emits light due to electron-hole pairs generated in the active layer 12 .

[0113] Figure 5 According to an embodiment of the present invention, Figure 1 Schematic plan view of a display device with a rod-shaped LED LD as a light source as shown in FIG.

[0114] refer to Figure 1 and Figure 5 , a display device according to an embodiment of the present invention may include a substrate SUB, a pixel PXL disposed on the substrate SUB, a driving unit (eg, a driver) disposed on the substrate SUB to drive the pixel PXL, and a line portion for connecting the pixel PXL and the driving unit.

[0115] The substrate SUB may include a display area DA and a non-display area NDA. The display area DA may be an area where pixels PXL for displaying an image are disposed. The non-display area NDA may be an area where a driving unit for driving the pixels PXL and a portion of a line portion for connecting the pixels PXL and the driving unit are disposed.

[0116] The pixel PXL may be disposed in the display area DA of the substrate SUB. Each of the pixels PXL may be disposed as a minimum unit for displaying an image. Each of the pixels PXL may include a light emitting element that emits white light and / or colored light. Each pixel PXL may emit light having one of red, green, and blue, but the present invention is not limited thereto. For example, each pixel PXL may emit light having one of cyan, magenta, yellow, and white.

[0117] The pixels PXL may be arranged in a matrix including rows extending in a first direction DR1 and columns extending in a second direction DR2 crossing the first direction DR1. However, the arrangement form of the pixels PXL is not particularly limited, and the pixels PXL may be arranged in various suitable forms.

[0118] The driving unit may supply a signal to each pixel PXL through the line portion to control the operation of the pixel PXL.

[0119] The driving unit may include a scan driver SDV for providing a scan signal to the pixel PXL through a scan line, a light emitting driver EDV for providing a light emitting control signal to the pixel PXL through a light emitting control line, a data driver DDV for providing a data signal to the pixel PXL through a data line, and a timing controller. The timing controller may control the scan driver SDV, the light emitting driver EDV, and the data driver DDV.

[0120] Figure 6 It is shown Figure 5 Schematic plan view of first to fourth sub-pixels included in one pixel shown in . Figure 7 It is shown Figure 6 A schematic circuit diagram of an optical coupler included in a fourth sub-pixel shown in FIG. Figure 8 It is along Figure 6 Cross-sectional views taken along lines II-II′ and III-III′.

[0121] exist Figure 6 In FIG. 1 , the rod-shaped LEDs LD are shown to be aligned in the horizontal direction, but the arrangement of the rod-shaped LEDs is not limited thereto. Figure 6 and Figure 8 In the embodiment of the present invention, a rod-shaped LED LD may be disposed in each of the first to fourth sub-pixels.

[0122] For the sake of illustration, Figure 6 The transistor connected to the rod-shaped LED LD and the signal line connected to the transistor are not shown.

[0123] In describing the following embodiments of the present invention, in order to avoid redundant description, the differences from the above embodiments are mainly described. The components and / or configurations not specifically described in the following embodiments are the same or substantially similar to the components and / or configurations in the above embodiments. The same reference numerals represent the same components, and similar reference numerals represent similar components. Figure 6 In the embodiment, the unit light emitting region may be a pixel region including one pixel including first to fourth sub-pixels.

[0124] refer to Figures 1 to 8 , one pixel PXL according to the embodiment of the present invention may include a first sub-pixel SP1 , a second sub-pixel SP2 , a third sub-pixel SP3 , and a fourth sub-pixel SP4 / SSP disposed on a substrate SUB.

[0125] The first to third subpixels SP1 , SP2 , and SP3 may be (or may form) a pixel region of the pixel PXL for displaying an image, and the fourth subpixel SP4 / SSP may be a sensing region for detecting a user's fingerprint or a user's touch.

[0126] For convenience, the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 will be described first, and then the fourth sub-pixel SP4 / SSP will be described.

[0127] Each of the first sub-pixel SP1 , the second sub-pixel SP2 , and the third sub-pixel SP3 may be formed on the substrate SUB, and may include a pixel circuit portion PCL and a display element layer DPL.

[0128] The substrate SUB may include an insulating material such as glass, an organic polymer, quartz, etc. In addition, the substrate SUB may be made of a flexible material so as to be bendable or foldable, and may have a single-layer structure or a multi-layer structure.

[0129] The pixel circuit portion PCL may include a buffer layer BFL disposed on a substrate SUB, a transistor T disposed on the buffer layer BFL, and a driving voltage line DVL.

[0130] The buffer layer BFL may prevent or reduce the diffusion of impurities into the transistor T. The buffer layer BFL may be provided as a single layer, but may be provided as a multilayer in other embodiments. When the buffer layer BFL is provided as a multilayer, each layer may be formed of the same material, or the layers may be formed of different materials. Depending on the material of the substrate SUB and process conditions, the buffer layer BFL may be omitted in some embodiments.

[0131] The transistor T may be electrically connected to a portion of the rod-shaped LED LD included in the display element layer DPL to drive the rod-shaped LED LD. The transistor T may include a semiconductor layer SCL, a gate electrode GE, a source electrode SE, and a drain electrode DE.

[0132] The semiconductor layer SCL may be disposed on the buffer layer BFL. The semiconductor layer SCL may include a source region in contact with the source electrode SE and a drain region in contact with the drain electrode DE. The region between the source region and the drain region may be a channel region. The semiconductor layer SCL may be a semiconductor pattern including (or made of) polycrystalline silicon, amorphous silicon, an oxide semiconductor, etc. The channel region may be a semiconductor pattern not doped with impurities and may be an intrinsic semiconductor. The source region and the drain region may be semiconductor patterns doped with impurities.

[0133] The gate electrode GE may be disposed on the semiconductor layer SCL with the gate insulating layer GI interposed therebetween.

[0134] Each of the source electrode SE and the drain electrode DE of the transistor T may be connected to a source region or a drain region of the semiconductor layer SCL through a contact opening (eg, a contact hole) penetrating the first and second interlayer insulating layers ILD1 and ILD2 and the gate insulating layer GI.

[0135] A passivation layer PSV may be disposed on the transistor T.

[0136] The driving voltage line DVL may be disposed on the first interlayer insulating layer ILD1 or the second interlayer insulating layer ILD2 and may extend along the second direction DR2 when viewed in a plan view. The driving voltage line DVL may be electrically connected to the display element layer DPL through a contact opening (eg, a contact hole) passing through the passivation layer PSV.

[0137] The display element layer DPL may include rod-shaped LEDs LD disposed on the passivation layer PSV. Each rod-shaped LED LD may include a first conductive semiconductor layer 11, a second conductive semiconductor layer 13, and an active layer 12 disposed between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13. In addition, each rod-shaped LED LD may have a first end portion EP1 and a second end portion EP2 along the first direction DR1. One of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be disposed at the first end portion EP1, and the other of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be disposed at the second end portion EP2.

[0138] In an embodiment of the present invention, the rod-shaped LED LD disposed in the first sub-pixel SP1 may emit red light, the rod-shaped LED LD disposed in the second sub-pixel SP2 may emit green light, and the rod-shaped LED LD disposed in the third sub-pixel SP3 may emit blue light, but the present invention is not limited thereto. For example, the rod-shaped LED LD disposed in each of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 may emit white light or blue light. Therefore, each of the first to third sub-pixels SP1, SP2, and SP3 may include a color conversion layer for emitting light of one color.

[0139] In an embodiment of the present invention, the rod-shaped LED LD disposed in the first subpixel SP1 may emit red light, the rod-shaped LED LD disposed in the second subpixel SP2 may emit green light, and the rod-shaped LED LD disposed in the third subpixel SP3 may emit blue light.

[0140] In addition, the display element layer DPL may further include a partition wall PW, first and second electrodes EL1 and EL2 , first and second contact electrodes CNE1 and CNE2 , and first and second connection lines CNL1 and CNL2 .

[0141] The partition wall PW may be disposed on the passivation layer PSV and may partition the emission area EMA in each of the first subpixel SP1, the second subpixel SP2, and the third subpixel SP3. The partition wall PW may include an opening corresponding to the rod-shaped LED LD included in each of the first subpixel SP1, the second subpixel SP2, and the third subpixel SP3.

[0142] The first insulating layer INS1 may be disposed on the substrate SUB and the partition wall PW. The first insulating layer INS1 may cover a portion of the upper surface of each of the rod-shaped LEDs LD disposed in each of the first to third sub-pixels SP1, SP2, and SP3. The first end portion EP1 and the second end portion EP2 of each of the rod-shaped LEDs LD may be exposed to the outside through (or via) the first insulating layer INS1.

[0143] The first electrode EL1 may be disposed on the partition wall PW. The first electrode EL1 may be disposed adjacent to the first end EP1 or the second end EP2 of the corresponding rod-shaped LED LD and may be electrically connected to the corresponding rod-shaped LED LD through the first contact electrode CNE1. The first electrode EL1 may be electrically connected to the driving voltage line DVL through the contact opening.

[0144] When viewed in a plan view, the first electrode EL1 may include a 1-1 electrode EL1_1 and a 1-2 electrode EL1_2 branching to the left and right sides of the second electrode EL2. Therefore, the 1-1 electrode EL1_1 and the 1-2 electrode EL1_2 and the second electrode EL2 may be alternately arranged on the substrate SUB. The 1-1 electrode EL1_1 and the 1-2 electrode EL1_2 may be connected to the first connection line CNL1.

[0145] The first connection line CNL1 may apply a voltage to the first electrode EL1 to align the corresponding rod-shaped LEDs LD (eg, to align the rod-shaped LEDs LD between the first electrode EL1 and the second electrode EL2 ).

[0146] The second electrode EL2 may be disposed adjacent to one of the first end EP1 and the second end EP2 of the corresponding rod-shaped LED LD and may be electrically connected to the corresponding rod-shaped LED LD through the second contact electrode CNE2. The second electrode EL2 included in each of the first subpixel SP1, the second subpixel SP2, and the third subpixel SP3 may be electrically connected to each other through the second connection line CNL2.

[0147] The second electrode EL2 may be electrically connected to the transistor T to receive a signal through the transistor T.

[0148] The second connection line CNL2 may apply a voltage to the second electrode EL2 to align the corresponding rod-shaped LEDs LD.

[0149] In an embodiment of the present invention, the first electrode EL1 and the first connection line CNL1 may be integrally provided, and the second electrode EL2 and the second connection line CNL2 may be integrally provided.

[0150] The first electrode EL1, the second electrode EL2, the first connection line CNL1, and the second connection line CNL2 may include the same or substantially similar materials. For example, the first electrode EL1, the second electrode EL2, the first connection line CNL1, and the second connection line CNL2 may include a conductive material.

[0151] The conductive material may include: metals such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or their alloys; conductive oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium tin zinc oxide (ITZO); conductive polymers such as PEDOT, etc.

[0152] In addition, each of the first electrode EL1, the second electrode EL2, the first connection line CNL1, and the second connection line CNL2 may be formed as a single layer, but the present invention is not limited thereto. In other embodiments, each of the first electrode EL1, the second electrode EL2, the first connection line CNL1, and the second connection line CNL2 may be formed as a multilayer structure in which a plurality of materials (such as metals, alloys, conductive oxides, and conductive polymers) are stacked.

[0153] In an embodiment of the present invention, the rod-shaped LED LD disposed in each of the first to third sub-pixels SP1, SP2, and SP3 may include a first rod-shaped LED LD1 disposed between the 1-1 electrode EL1_1 and the second electrode EL2 and a second rod-shaped LED LD2 disposed between the second electrode EL2 and the 1-2 electrode EL1_2.

[0154] The first end EP1 of the first rod-shaped LED LD1 may be disposed adjacent to the 1-1 electrode EL1_1, and the second end EP2 of the first rod-shaped LED LD1 may be disposed adjacent to one side of the second electrode EL2. The first end EP1 of the second rod-shaped LED LD2 may be disposed adjacent to the other side of the second electrode EL2, and the second end EP2 of the second rod-shaped LED LD2 may be disposed adjacent to the 1-2 electrode EL1_2.

[0155] A first contact electrode CNE1 for electrically and / or physically connecting the first electrode EL1 and the corresponding rod-shaped LED LD may be disposed on the first electrode EL1. When viewed in a plan view, the first contact electrode CNE1 may include a 1-1st contact electrode CNE1_1 overlapping the 1-1st electrode EL1_1 and a 1-2nd contact electrode CNE1_2 overlapping the 1-2nd electrode EL1_2.

[0156] The first end portion EP1 of the first rod-shaped LED LD1 may be connected to the 1-1th electrode EL1_1 through the 1-1th contact electrode CNE1_1. Therefore, a voltage applied to the driving voltage line DVL may be applied to the first end portion EP1 of the first rod-shaped LED LD1 through the 1-1th electrode EL1_1 and the 1-1th contact electrode CNE1_1.

[0157] The second end EP2 of the second rod-shaped LED LD2 may be electrically connected to the 1-2 electrode EL1_2 through the 1-2 contact electrode CNE1_2. Therefore, a voltage applied to the driving voltage line DVL may be applied to the second end EP2 of the second rod-shaped LED LD2 through the 1-2 electrode EL1_2 and the 1-2 contact electrode CNE1_2.

[0158] The second insulating layer INS2 may be disposed on the substrate SUB and the first contact electrode CNE1. The second insulating layer INS2 may be an inorganic insulating layer including an inorganic material or an organic insulating layer including an organic material.

[0159] A second contact electrode CNE2 for electrically and / or physically connecting the second electrode EL2 and the corresponding rod-shaped LED LD may be disposed on the second electrode EL2. The second contact electrode CNE2 may overlap the second electrode EL2 when viewed in a plan view.

[0160] The second end EP2 of the first rod-shaped LED LD1 may be connected to the second electrode EL2 through the second contact electrode CNE2. Therefore, the voltage of the transistor T may be applied to the second end EP2 of the first rod-shaped LED LD1 through the second electrode EL2 and the second contact electrode CNE2.

[0161] Therefore, the first end portion EP1 and the second end portion EP2 of the first rod-shaped LED LD1 may receive a voltage (eg, a predetermined voltage) through the 1-1th electrode EL1_1 and the second electrode EL2 , and the first rod-shaped LED LD1 may emit light.

[0162] The first end EP1 of the second rod-shaped LED LD2 may be connected to the second electrode EL2 through the second contact electrode CNE2. Therefore, the voltage of the transistor T may be applied to the first end EP1 of the second rod-shaped LED LD2 through the second electrode EL2 and the second contact electrode CNE2.

[0163] Therefore, the first end portion EP1 and the second end portion EP2 of the second rod-shaped LED LD2 may receive a voltage (eg, a predetermined voltage) through the second electrode EL2 and the 1-2 th electrode EL1_2 , and the second rod-shaped LED LD2 may emit light.

[0164] The third insulating layer INS3 may be disposed on the substrate SUB and the second contact electrode CNE2. The third insulating layer INS3 may cover the second contact electrode CNE2 (eg, the second contact electrode CNE2 may be disposed under the third insulating layer INS3) so that the second contact electrode CNE2 is not exposed to the outside.

[0165] The overcoat layer OC may be disposed on the third insulating layer INS3 .

[0166] Next, the fourth subpixel SP4 / SSP will be described. In the following description of the fourth subpixel SP4 / SSP, in order to avoid duplication of description, repeated descriptions of components and / or configurations that are the same as or substantially similar to those of the first subpixel SP1, the second subpixel SP2, and the third subpixel SP3 may be omitted or simplified.

[0167] In an embodiment of the present invention, the fourth sub-pixel SP4 / SSP may include a light emitting element LD and a light receiving element PD disposed on the substrate SUB. In addition, the fourth sub-pixel SP4 / SSP may include a transistor T for driving the light emitting element LD and the light receiving element PD.

[0168] The fourth subpixel SP4 / SSP may have a light emitting area EMA corresponding to the light emitting element LD, a non-light emitting area NEMA excluding (or in addition to) the light emitting area EMA, a sensing area SA corresponding to the light receiving element PD, and a non-sensing area NSA excluding (or in addition to) the sensing area SA. The non-sensing area NSA may be the non-light emitting area NEMA, and the non-light emitting area NEMA may be the non-sensing area NSA.

[0169] The light emitting element LD may be a rod-shaped LED that emits infrared light. For example, the light emitting element LD may include a gallium arsenide (GaAs) infrared light emitting diode. The light emitting element LD may include a first conductive semiconductor layer 11, a second conductive semiconductor layer 13, and an active layer 12. The light emitting element LD may have a first end EP1 and a second end EP2 along a first direction DR1.

[0170] The light emitting element LD may be electrically connected to the transistor T and the driving voltage line DVL.

[0171] For example, the first end EP1 of the light emitting element LD may be electrically connected to the 1-1 electrode EL1_1 of the fourth sub-pixel SP4 / SSP through the 1-1 contact electrode CNE1_1 of the fourth sub-pixel SP4 / SSP. The 1-1 electrode EL1_1 is electrically connected to the driving voltage line DVL, so that the voltage applied to the driving voltage line DVL is finally applied to the first end EP1 of the light emitting element LD.

[0172] The second end EP2 of the light emitting element LD can be electrically connected to the second electrode EL2 of the fourth sub-pixel SP4 / SSP through the second contact electrode CNE2 of the fourth sub-pixel SP4 / SSP. The second electrode EL2 is electrically connected to the transistor T of the fourth sub-pixel SP4 / SSP, so that the voltage of the transistor T is finally applied to the second end EP2 of the light emitting element LD.

[0173] The light emitting element LD may emit infrared light having an intensity corresponding to a voltage applied to the first end portion EP1 and the second end portion EP2 .

[0174] When viewed in a plan view, the 1-1th contact electrode CNE1_1 may overlap the 1-1th electrode EL1_1 and the first end portion EP1 of the light emitting element LD, and the second contact electrode CNE2 may overlap the second electrode EL2 and the second end portion EP2 of the light emitting element LD.

[0175] The light receiving element PD can detect infrared light emitted from the light emitting element LD. The light receiving element PD may include a silicon avalanche photodiode, a PIN diode, cadmium sulfide, cadmium selenide, etc., but the present invention is not limited thereto. In other embodiments, the light receiving element PD may include a photodetector transistor.

[0176] The light receiving element PD may have a first end portion EP1 and a second end portion EP2 along the first direction DR1 .

[0177] The first end EP1 of the light receiving element PD may be electrically connected to the other side of the second electrode EL2 through the second contact electrode CNE2. The second electrode EL2 may be electrically connected to the transistor T of the fourth subpixel SP4 / SSP. Therefore, the voltage of the transistor T may be finally applied to the first end EP1 of the light receiving element PD.

[0178] The second end EP2 of the light receiving element PD may be electrically connected to the 1-2 electrode EL1_2 of the fourth sub-pixel SP4 / SSP through the 1-2 contact electrode CNE1_2 of the fourth sub-pixel SP4 / SSP. The 1-2 electrode EL1_2 may be electrically connected to the driving voltage line DVL. Therefore, the voltage applied to the driving voltage line DVL may be finally applied to the second end EP2 of the light receiving element PD.

[0179] The light receiving element PD may be driven by a voltage applied to the first end portion EP1 and the second end portion EP2 to detect infrared light emitted from the light emitting element LD, and may convert the detected infrared light into an electric signal.

[0180] When viewed in a plan view, the second contact electrode CNE2 may overlap the second electrode EL2 and the first end portion EP1 of the light receiving element PD, and the 1-2nd contact electrode CNE1_2 may overlap the 1-2nd electrode EL1_2 and the second end portion EP2 of the light receiving element PD.

[0181] When a user's hand, an object, or the like is positioned on the display device, infrared light emitted from the light emitting element LD may be reflected by the user's hand or the object.

[0182] The reflected infrared light (hereinafter referred to as "reflected light") may be incident on the light receiving element PD and may be detected by the light receiving element PD. The reflected light may be converted into an electrical signal by the light receiving element PD, and the electrical signal may be transmitted to an external sensing circuit via a read line RL connected to the light receiving element PD.

[0183] The read line RL may extend along the second direction DR2 and may electrically connect the light receiving element PD and an external sensing circuit. The external sensing circuit may confirm the user's fingerprint information and / or touch position information through an electrical signal obtained from the read line RL.

[0184] The infrared light emitted from the light emitting element LD may not affect the image quality of the display device. For example, compared with visible light, infrared light has high reflectivity and directivity. Therefore, when the user's hand is positioned on the display device, the infrared light emitted from the light emitting element LD may be reflected relatively more than the visible light, and may be incident on the light receiving element PD.

[0185] A third insulating layer INS3 may be disposed on the light emitting element LD and the light receiving element PD.

[0186] In an embodiment of the present invention, the fourth sub-pixel SP4 / SSP may further include a light blocking pattern BLP.

[0187] The light blocking pattern BLP may be disposed on the third insulating layer INS3 and may have first openings OP1 for exposing the third insulating layer INS3 corresponding to the light emitting element LD to the outside and second openings OP2 for exposing the third insulating layer INS3 corresponding to the light receiving element PD to the outside.

[0188] The light blocking pattern BLP may block or mainly block the infrared light emitted from the light emitting element LD from traveling to the sub-pixel adjacent to the fourth sub-pixel SP4 / SSP. For example, the infrared light emitted from the light emitting element LD may be blocked or substantially blocked by the light blocking pattern BLP from traveling to another area not corresponding to the light emitting element LD.

[0189] In addition, the light blocking pattern BLP may be configured to allow infrared light emitted from the light emitting element LD to pass through (eg, only pass through) the first opening OP1 .

[0190] When a user's hand or the like is positioned on the display device, the infrared light that has passed through the first opening OP1 may be reflected by the user's hand and may be incident on (e.g., may pass through) the second opening OP2. The light receiving element PD receives the infrared light incident on the second opening OP2. The light receiving element PD converts the received infrared light into an electrical signal and transmits the electrical signal to the sensing circuit through the read line RL.

[0191] As described above, in the fourth subpixel SP4 / SSP, the light emitting element LD and the light receiving element PD may be disposed on the same plane, such as the passivation layer PSV, and may be optically coupled to have unidirectionality to form an optical coupler.

[0192] Optocouplers can have Figure 7 For example, the photocoupler may have a circuit configuration including an input terminal 100, a light emitting element LD, a light receiving element PD, and an output terminal 200. The input terminal 100 and the output terminal 200 may be electrically insulated from each other.

[0193] The light emitting element LD may be disposed between the input terminal 100 and the output terminal 200 , and may emit infrared light having an intensity corresponding to an electric field formed between the input terminal 100 and the output terminal 200 .

[0194] The light receiving element PD is driven by an electric field formed between the input terminal 100 and the output terminal 200. The light receiving element PD detects infrared light emitted from the light emitting element LD and converts the infrared light into an electric signal. The electric signal can be transmitted to the read line RL through the output terminal 200.

[0195] The optical coupling between the light emitting element LD and the light receiving element PD of the optical coupler having the circuit configuration as described above can cause the infrared light emitted from the light emitting element LD to be reflected by the user's hand and incident on (e.g., directly incident on) the light receiving element PD. Therefore, the intensity of the light incident on the light receiving element PD is relatively increased, and the sensitivity of the light receiving element PD can be further improved.

[0196] Therefore, the touch recognition rate in the fourth sub-pixel SP4 / SSP including the light receiving element PD may be improved.

[0197] Figures 9 to 16 It is shown in sequence that the manufacturing Figure 8 0 is a cross-sectional view of a fourth sub-pixel as shown in FIG.

[0198] refer to Figure 8 and Fig. 9 , a transistor T and a passivation layer PSV covering the transistor T may be formed on the substrate SUB.

[0199] The transistor T may include a semiconductor layer SCL disposed on a buffer layer BFL of a substrate SUB, a gate electrode GE disposed on the semiconductor layer SCL, and a source electrode SE and a drain electrode DE connected to the semiconductor layer SCL with a gate insulating layer GI interposed therebetween.

[0200] refer to Figure 8 and Fig.10 , a partition wall PW may be formed on the passivation layer PSV. A 1-1st electrode EL1_1, a 1-2nd electrode EL1_2, and a second electrode EL2 may be formed on the substrate SUB including the partition wall PW. The 1-1st electrode EL1_1 and the 1-2nd electrode EL1_2 may be disposed on the corresponding partition wall PW. The second electrode EL2 may be disposed between the 1-1st electrode EL1_1 and the 1-2nd electrode EL1_2.

[0201] refer to Figure 8 and Fig.11When an electric field is applied between the 1-1 electrode EL1_1 and the second electrode EL2, the light emitting elements LD may be dispersed on the substrate SUB. Also, when an electric field is applied between the second electrode EL2 and the 1-2 electrode EL1_2, the light receiving elements PD may be dispersed on the substrate SUB.

[0202] As a non-limiting example of a method of dispersing the light emitting elements LD and the light receiving elements PD on the substrate SUB on which the 1-1st electrode EL1_1, the 1-2nd electrode EL1_2, and the second electrode EL2 are formed, an inkjet printing method may be used. However, the present invention is not limited thereto.

[0203] Due to the electric field formed between the 1-1 electrode EL1_1 and the second electrode EL2 when the light emitting element LD is set, the light emitting element LD can be self-aligned. For example, when a voltage (e.g., a predetermined voltage) is applied to the 1-1 electrode EL1_1 and the second electrode EL2, an electric field is formed between the 1-1 electrode EL1_1 and the second electrode EL2 and the light emitting element LD can be self-aligned between the 1-1 electrode EL1_1 and the second electrode EL2.

[0204] Due to the electric field formed between the 1-2 electrode EL1_2 and the second electrode EL2 when the light receiving element PD is set, the light receiving element PD can be self-aligned. For example, when a voltage (e.g., a predetermined voltage) is applied to the 1-2 electrode EL1_2 and the second electrode EL2, an electric field is formed between the 1-2 electrode EL1_2 and the second electrode EL2 and the light receiving element PD can be self-aligned between the 1-2 electrode EL1_2 and the second electrode EL2.

[0205] refer to Figure 8 and Fig.12 , an insulating material layer may be coated on the entire surface of the substrate SUB (on which the light emitting element LD and the light receiving element PD are aligned), and a first insulating pattern INS1′ covering the second end EP2 of the light emitting element LD and the first end EP1 of the light receiving element PD may be formed by a mask process. The first end EP1 of the light emitting element LD and the second end EP2 of the light receiving element PD may be exposed to the outside (for example, may be exposed through the first insulating pattern INS1′).

[0206] Next, a 1-1 th contact electrode CNE1_1 and a 1-2 th contact electrode CNE1_2 may be formed on the substrate SUB including the first insulating pattern INS1 ′.

[0207] The 1-1st contact electrode CNE1_1 may cover the 1-1st electrode EL1_1 and the first end portion EP1 of the light emitting element LD, and may be electrically connected to each of the 1-1st electrode EL1_1 and the first end portion EP1 of the light emitting element LD. The 1-1st contact electrode CNE1_1 may electrically and / or physically connect the 1-1st electrode EL1_1 to the first end portion EP1 of the light emitting element LD.

[0208] The 1-2nd contact electrode CNE1_2 may cover the 1-2nd electrode EL1_2 and the second end portion EP2 of the light receiving element PD, and may be electrically connected to each of the 1-2nd electrode EL1_2 and the second end portion EP2 of the light receiving element PD. The 1-2nd contact electrode CNE1_2 may electrically and / or physically connect the 1-2nd electrode EL1_2 to the second end portion EP2 of the light receiving element PD.

[0209] refer to Figure 8 and Fig.13 , an insulating material layer may be coated on the entire surface of the substrate SUB including the 1-1st contact electrode CNE1_1 and the 1-2nd contact electrode CNE1_2, and a second insulating layer INS2 exposing the second electrode EL2, the second end portion EP2 of the light emitting element LD, and the first end portion EP1 of the light receiving element PD may be formed by a mask process. The insulating material layer and the first insulating pattern INS1′ may be patterned by a mask process to form the second insulating layer INS2 and the first insulating layer INS1 exposing the second end portion EP2 of the light emitting element LD, the second electrode EL2, and the first end portion EP1 of the light receiving element PD.

[0210] refer to Figure 8 and Fig.14 , a second contact electrode CNE2 may be formed on the substrate SUB including the second insulating layer INS2. The second contact electrode CNE2 may cover the second electrode EL2, the second end portion EP2 of the light emitting element LD, and the first end portion EP1 of the light receiving element PD.

[0211] The second contact electrode CNE2 may be connected to each of the second end EP2 of the light emitting element LD and the second electrode EL2, and may electrically and / or physically connect the second end EP2 of the light emitting element LD to the second electrode EL2. In addition, the second contact electrode CNE2 may be connected to each of the first end EP1 of the light receiving element PD and the second electrode EL2, and may electrically and / or physically connect the first end EP1 of the light receiving element PD to the second electrode EL2.

[0212] The second end EP2 of the light emitting element LD and the first end EP1 of the light receiving element PD may be electrically connected to each other through the second contact electrode CNE2. In an embodiment of the present invention, the light emitting element LD and the light receiving element PD may be optically coupled in a direction extending from the second end EP2 of the light emitting element LD toward the first end EP1 of the light receiving element PD. In other words, in the fourth sub-pixel SP4 / SSP, the light emitting element LD and the light receiving element PD may form an optical coupler.

[0213] refer to Figure 8 and Fig.15 , a third insulating layer INS3 may be formed on the entire surface of the substrate SUB including the second contact electrode CNE2. The third insulating layer INS3 may cover the second contact electrode CNE2 so that the second contact electrode CNE2 may not be corroded.

[0214] Next, a light blocking pattern BLP may be formed on the third insulating layer INS3 and may have a first opening OP1 for exposing a portion of the third insulating layer INS3 corresponding to the light emitting element LD and a second opening OP2 for exposing a portion of the third insulating layer INS3 corresponding to the light receiving element PD.

[0215] refer to Figure 8 and Fig.16 , an overcoat layer OC may be formed on the entire surface of the substrate SUB including the light blocking pattern BLP.

[0216] The protective layer OC may cover the light blocking pattern BLP so that the light blocking pattern BLP may not be corroded. In addition, the protective layer OC may flatten a surface that is rough due to a component located below the protective layer OC. In addition, the protective layer OC may prevent or reduce oxygen and moisture from penetrating into the light emitting element LD and the light receiving element PD from the outside.

[0217] Fig.17 It is along Figure 6 A cross-sectional view taken along line III-III′ of FIG. 1 and showing a display device according to another embodiment of the present invention. In the following embodiments of the present invention, in order to avoid redundant descriptions, components and / or configuration forms different from those in the above-described embodiments will be mainly described. Components and / or configurations not particularly described in the following embodiments correspond to components and / or configurations that are identical or substantially similar to those in the above-described embodiments. For example, the same reference numerals represent identical constituent elements, and similar reference numerals represent similar constituent elements.

[0218] In addition to the light blocking pattern included in the display element layer being disposed on the protective layer, Fig.17 The configuration of the display device shown in the figure can be combined with Figure 6 and Figure 8The display device of the fourth sub-pixel shown in is substantially the same or similar.

[0219] refer to Figure 6 , Figure 8 and Fig.17 , a display device according to another embodiment of the present invention may include a substrate SUB, a pixel circuit portion PCL disposed on the substrate SUB, and a display element layer DPL disposed on the pixel circuit portion PCL.

[0220] The display element layer DPL may include a light emitting element LD and a light receiving element PD forming an optical coupler. In an embodiment of the present invention, the light emitting element LD may be a rod-shaped LED that emits infrared light. The light receiving element PD may be a photodiode that receives infrared light emitted from the light emitting element LD and reflected by a user's hand or an object.

[0221] In addition, the display element layer DPL may further include a protective layer OC disposed on the light emitting element LD and the light receiving element PD so as to cover the light emitting element LD and the light receiving element PD.

[0222] The light blocking pattern BLP may be disposed on the overcoat layer OC. The light blocking pattern BLP may have a first opening OP1 exposing a portion of the overcoat layer OC corresponding to the light emitting element LD and a second opening OP2 exposing a portion of the overcoat layer OC corresponding to the light receiving element PD.

[0223] The light blocking pattern BLP may prevent or substantially prevent the infrared light emitted from the light emitting element LD from traveling to the other sub-pixels SP1, SP2, and SP3 except the fourth sub-pixel SP4 / SSP. In addition, the light blocking pattern BLP may allow the infrared light emitted from the light emitting element LD to pass through (e.g., only pass through) the first opening OP1. When a user's hand or the like is positioned on the display device, the infrared light that has passed through the first opening OP1 may be reflected by the user's hand and may be incident to the second opening OP2. The light receiving element PD receives the infrared light incident to the second opening OP2. The light receiving element PD converts the received infrared light into an electrical signal and transmits the electrical signal to the sensing circuit through the read line RL.

[0224] When the light blocking pattern BLP is disposed on the overcoat layer OC, a passivation layer may be disposed on the light blocking pattern BLP to protect the light blocking pattern BLP.

[0225] Fig.18 It is along Figure 6A cross-sectional view taken along line III-III′ of FIG. 1 and showing a display device according to another embodiment of the present invention. In the following embodiments of the present invention, in order to avoid redundant descriptions, components and / or configurations different from those in the above-described embodiments will be mainly described. Components and / or configurations not particularly described in the following embodiments correspond to components and / or configurations that are identical or substantially similar to those in the above-described embodiments. For example, the same reference numerals represent identical constituent elements, and similar reference numerals represent similar constituent elements.

[0226] In addition to the light extraction layer being provided on the protective layer included in the display element layer, Fig.18 The configuration of the display device shown in the figure can be combined with Figure 6 and Figure 8 The display device of the fourth sub-pixel shown in is substantially the same or similar.

[0227] refer to Figure 6 , Figure 8 and Fig.18 , a display device according to another embodiment of the present invention may include a substrate SUB, a pixel circuit portion PCL disposed on the substrate SUB, and a display element layer DPL disposed on the pixel circuit portion PCL.

[0228] The display element layer DPL may include a light emitting element LD and a light receiving element PD forming an optical coupler. In an embodiment of the present invention, the light emitting element LD may be a rod-shaped LED that emits infrared light. The light receiving element PD may be a photodiode that receives infrared light emitted from the light emitting element LD and reflected by a user's hand or an object.

[0229] In addition, the display element layer DPL may include a light blocking pattern BLP having a first opening OP1 exposing a portion of the third insulating layer INS3 corresponding to the light emitting element LD and a second opening OP2 exposing a portion of the third insulating layer INS3 corresponding to the light receiving element PD. An overcoat layer OC may be disposed on the light blocking pattern BLP.

[0230] In an embodiment of the present invention, the display element layer DPL may further include a light extraction layer LEL disposed on the protective layer OC. The light extraction layer LEL may include a lens portion LSP corresponding to the second opening OP2. When the infrared light having passed through the first opening OP1 is reflected by the user's hand and incident on the second opening OP2, the lens portion LSP may gather (or converge) the infrared light incident on the second opening OP2. The intensity of light incident on the light receiving element PD may be relatively increased by the lens portion LSP, and the sensitivity of the light receiving element PD may be improved.

[0231] The lens portion LSP may have a spherical shape, a hemispherical shape, a super hemispherical shape, a concave shape, a convex shape, a polygonal shape, etc. However, the shape of the lens portion LSP may be appropriately changed in various ways according to the refractive index of the protective layer OC and the third insulating layer INS3 disposed between the light receiving element PD and the lens portion LSP (e.g., disposed in the space therebetween). In addition, the curvature of the lens portion LSP may be appropriately changed according to the distance from the light receiving element PD, etc.

[0232] Fig.19 It is along Figure 6 A cross-sectional view taken along line III-III′ of FIG. 1 and showing a display device according to another embodiment of the present invention. In the following embodiments of the present invention, in order to avoid redundant descriptions, components and / or configurations different from those in the above-described embodiments will be mainly described. Components and / or configurations not particularly described in the following embodiments correspond to components and / or configurations that are identical or substantially similar to those in the above-described embodiments. For example, the same reference numerals represent identical constituent elements, and similar reference numerals represent similar constituent elements.

[0233] In addition to the fact that the second end of the light emitting element and the first end of the light receiving element are connected to different second contact electrodes in the display element layer, Fig.19 The configuration of the display device shown in the figure can be combined with Figure 6 and Figure 8 The display device of the fourth sub-pixel shown in is substantially the same or similar.

[0234] refer to Figure 6 , Figure 8 and Fig.19 , a display device according to another embodiment of the present invention may include a substrate SUB, a pixel circuit portion PCL disposed on the substrate SUB, and a display element layer DPL disposed on the pixel circuit portion PCL.

[0235] The display element layer DPL may include a light emitting element LD and a light receiving element PD forming an optical coupler. In an embodiment of the present invention, the light emitting element LD may be a rod-shaped LED that emits infrared light. The light receiving element PD may be a photodiode that receives infrared light emitted from the light emitting element LD and reflected by a user's hand or an object.

[0236] The display element layer DPL may include a 1-1st electrode EL1_1 and a 2-1st electrode EL2_1 spaced apart from each other on the passivation layer PSV with the light emitting element LD interposed therebetween. The 1-1st electrode EL1_1 may be disposed adjacent to a first end EP1 of the light emitting element LD, and the 2-1st electrode EL2_1 may be disposed adjacent to a second end EP2 of the light emitting element LD.

[0237] The 1-1st contact electrode CNE1_1 may be disposed on the 1-1st electrode EL1_1 and the first end EP1 of the light emitting element LD, and the 2-1st contact electrode CNE2_1 may be disposed on the 2-1st electrode EL2_1 and the second end EP2 of the light emitting element LD. The 1-1st contact electrode CNE1_1 may electrically and / or physically connect the first end EP1 of the light emitting element LD to the 1-1st electrode EL1_1. The 2-1st contact electrode CNE2_1 may electrically and / or physically connect the second end EP2 of the light emitting element LD to the 2-1st electrode EL2_1.

[0238] In addition, the display element layer DPL may include a 2-2 electrode EL2_2 and a 1-2 electrode EL1_2 spaced apart from each other on the passivation layer PSV with the light emitting element LD interposed therebetween. The 2-2 electrode EL2_2 may be disposed adjacent to the first end EP1 of the light receiving element PD, and the 1-2 electrode EL1_2 may be disposed adjacent to the second end EP2 of the light receiving element PD.

[0239] The 1-2nd contact electrode CNE1_2 may be disposed on the 1-2nd electrode EL1_2 and the second end portion EP2 of the light receiving element PD, and the 2-2nd contact electrode CNE2_2 may be disposed on the 2-2nd electrode EL2_2 and the first end portion EP1 of the light receiving element PD. The 1-2nd contact electrode CNE1_2 may electrically and / or physically connect the second end portion EP2 of the light receiving element PD and the 1-2nd electrode EL1_2. The 2-2nd contact electrode CNE2_2 may electrically and / or physically connect the first end portion EP1 of the light receiving element PD and the 2-2nd electrode EL2_2.

[0240] As described above, the first end EP1 of the light emitting element LD may be electrically connected to the 1-1 electrode EL1_1, and the second end EP2 of the light emitting element LD may be electrically connected to the 2-1 electrode EL2_1. The first end EP1 of the light receiving element PD may be electrically connected to the 2-2 electrode EL2_2, and the second end EP2 of the light receiving element PD may be electrically connected to the 1-2 electrode EL1_2.

[0241] In an embodiment of the present invention, the 2-1st electrode EL2_1 and the 2-2nd electrode EL2_2 may be disposed on the same plane, such as the passivation layer PSV, and may be spaced apart from each other by a certain distance (eg, a predetermined distance), and may be electrically insulated from each other by the third insulating layer INS3.

[0242] The intensity of infrared light emitted from the light emitting element LD can be controlled by voltages applied to the 1-1 electrode EL1_1 and the 2-1 electrode EL2_1. In addition, the sensitivity for reading infrared light incident on the light receiving element PD can be controlled by voltages applied to the 1-2 electrode EL1_2 and the 2-2 electrode EL2_2.

[0243] Therefore, the light emitting element LD and the light receiving element PD can be independently driven in the fourth sub-pixel SP4 / SSP.

[0244] According to an embodiment of the present invention, a photocoupler is disposed in a sub-pixel and a touch recognition rate of a display device can be improved.

[0245] The display device according to the embodiment of the present invention can be implemented as various electronic devices. For example, the display device can be applied to televisions, notebooks, mobile phones, smart phones, smart tablets (PD), PMPs, PDAs, navigation devices, various wearable devices (such as smart watches), etc.

[0246] As described above, exemplary embodiments of the present invention have been disclosed in the detailed description and the accompanying drawings. It is to be understood that the terms used herein are for the purpose of describing the present invention and should not be used to limit the scope of the present invention as set forth in the claims and their equivalents. It will be appreciated by those skilled in the art that various modifications and equivalent embodiments are feasible without departing from the scope of the present invention. Therefore, the scope of the present invention should be determined by the technical features set forth in the attached claims and their equivalents.

Claims

1. Display equipment, including: A substrate having a display area and a non-display area; as well as a plurality of pixels located in the display area of ​​the substrate, each of the pixels including a first sub-pixel and a second sub-pixel, each of the first sub-pixel and the second sub-pixel having a light emitting area for emitting light, The first sub-pixel includes a first light-emitting element located in the light-emitting region, and the first light-emitting element is configured to emit visible light. Wherein, the second sub-pixel includes: a second light emitting element, the second light emitting element being located in the light emitting region, the second light emitting element being configured to emit infrared light, and a light receiving element configured to receive the infrared light emitted from the second light emitting element to detect a user's touch, and wherein the second light emitting element and the light receiving element in the second sub-pixel are optically coupled to each other to form an optical coupler, and The second light emitting element and the light receiving element have an anode and a cathode respectively, the anode of the second light emitting element and the cathode of the light receiving element are connected to the first electrode, and the cathode of the second light emitting element and the anode of the light receiving element are connected to the second electrode.

2. The display device according to claim 1, wherein: The second light emitting element includes a rod-shaped light emitting diode configured to emit the infrared light, and the light receiving element includes a photodiode configured to receive the infrared light.

3. The display device according to claim 2, wherein: The first light emitting element emits one of red light, green light, blue light and white light.

4. The display device according to claim 2, wherein: Each of the first sub-pixel and the second sub-pixel includes a transistor located on the substrate.

5. The display device according to claim 4, wherein: The transistor comprises: A semiconductor layer, located on the substrate; a gate electrode, located on the semiconductor layer, with a gate insulating layer between the gate electrode and the semiconductor layer; and A source electrode and a drain electrode are connected to the semiconductor layer.

6. The display device according to claim 2, wherein: The light receiving element is configured to detect the infrared light emitted from the second light emitting element and reflected from a finger of a user, and convert the detected infrared light into an electric signal.

7. The display device according to claim 6, wherein: The second sub-pixel further includes a readout line for receiving the electrical signal of the light receiving element.

8. The display device according to claim 6, wherein: Each of the first light emitting element, the second light emitting element, and the light receiving element includes: a first conductive semiconductor layer doped with a first conductive dopant; a second conductive semiconductor layer doped with a second conductive dopant; and The active layer is located between the first conductive semiconductor layer and the second conductive semiconductor layer.

9. The display device according to claim 8, wherein: Each of the first light emitting element and the second light emitting element includes a light emitting diode having a cylindrical column shape or a polygonal column shape and having a micrometer-scale or nanometer-scale size.

10. The display device according to claim 2, further comprising: an insulating layer, located on the substrate, the second light emitting element and the light receiving element; as well as The protective layer is located on the insulating layer.

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