Crack Detection Chip

Abstract

The present invention provides a crack detection chip, the crack detection chip comprising: a chip, the chip comprising an inner area and an outer area surrounding the inner area; a protection ring formed inside the chip along the edge of the chip, the protection ring defining the inner area and the outer area; an edge wiring arranged in the form of a closed curve along the edge of the inner area; and a pad exposed on the surface of the chip and connected to the edge wiring. The edge wiring is connected to a time domain reflectometer (TDR) module, the time domain reflectometer module applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect the position of a crack.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority benefit of Korean Patent Application No. 10-2018-0023638 filed on February 27, 2018 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] Exemplary embodiments of the inventive concept relate to a crack detection chip and a crack detection method using the same. Background Art

[0004] When individual chips in a wafer are diced during the assembly process of semiconductor chips and semiconductor packages, micro cracks may occur on the edges of the chips. Such cracks expand over time and may cause quality and reliability problems for semiconductor chips and semiconductor packages.

[0005] A circuit such as a chipping detect circuit (CDC) may be configured to detect a crack, and if a signal is not returned within a certain time, it is determined that a defect occurs in an edge region of the chip. In this method, only whether a crack exists (e.g., whether a defect occurs) can be known, and the position where the crack occurs cannot be accurately checked. Summary of the invention

[0006] According to an exemplary embodiment of the present inventive concept, a crack detection chip includes: a chip including an inner area and an outer area surrounding the inner area; a guard ring formed inside the chip along an edge of the chip, the guard ring defining the inner area and the outer area; an edge wiring arranged in the form of a closed curve along an edge of the inner area; and a pad exposed on a surface of the chip and connected to the edge wiring. The edge wiring is connected to a time domain reflectometer (TDR) module, the time domain reflectometer module applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a location of a crack.

[0007] According to an exemplary embodiment of the inventive concept, a crack detection chip includes: a substrate including a first region and a second region; a guard ring separating the first region from the second region; an edge wiring formed to be buried in the second region; and a pad connected to the edge wiring and exposed to an upper surface of the substrate. The edge wiring is connected to a time domain reflectometer (TDR) module through the pad. The TDR module applies an incident wave to the edge wiring and detects a reflected wave formed in the edge wiring to detect a location of a crack.

[0008] According to an exemplary embodiment of the inventive concept, a crack detection chip includes: an edge wiring arranged along an edge of the chip and formed in the shape of a closed curve; and a pad exposed to a surface of the chip and connected to the edge wiring. The edge wiring is connected to a time domain reflectometer (TDR) module, and the time domain reflectometer module applies an incident wave to the edge wiring through the pad and detects a reflected wave formed in the edge wiring to detect a position of a crack. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The above and other aspects and features of the present inventive concept will become more apparent by describing in detail exemplary embodiments of the present inventive concept with reference to the attached drawings.

[0010] Figure 1 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0011] Figure 2 is an exemplary embodiment according to the inventive concept. Figure 1 A cross-sectional view taken along line AA'.

[0012] Figure 3 is used to explain an exemplary embodiment according to the inventive concept Figure 1 Conceptual layout of the connection between the crack detection chip and the time domain reflectometer (TDR) module.

[0013] Figure 4 is used to explain an exemplary embodiment according to the inventive concept Figure 3 Conceptual diagram of the operation of the crack detection chip and TDR module.

[0014] Figure 5 A graph of FIG. 1 is used to explain a reflected wave distance obtained according to detection of a reflected wave over time according to an exemplary embodiment of the inventive concept.

[0015] Figure 6 is a conceptual diagram for explaining operations of a crack detection chip and a TDR module according to an exemplary embodiment of the inventive concept.

[0016] Figure 7 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0017] Figure 8 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0018] Fig. 9 is a diagram showing an exemplary embodiment according to the inventive concept Figure 8Block diagram of the positional relationship between the crack detection chip, radiation mirror and detection unit.

[0019] Fig.10 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0020] Fig.11 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0021] Fig.12 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0022] Fig.13 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0023] Fig.14 is used to explain an exemplary embodiment according to the inventive concept Fig.13 Conceptual diagram of the operation of the crack detection chip and the time propagation delay (tPD) unit.

[0024] Fig.15 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0025] Fig.16 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0026] Fig.17 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0027] Fig.18 is a flowchart for explaining a crack detection method according to an exemplary embodiment of the present inventive concept.

[0028] Fig.19 is a flowchart for explaining a crack detection method according to an exemplary embodiment of the present inventive concept.

[0029] Fig. 20 is used to explain in detail an exemplary embodiment according to the inventive concept Fig.19 Flowchart of the radiation mirror crack detection operation.

[0030] Fig.21 is a flowchart for explaining a crack detection method according to an exemplary embodiment of the present inventive concept.

[0031] Fig. 22 is used to explain in detail an exemplary embodiment according to the inventive concept Fig.21Flowchart of operations for determining whether a tPD crack exists.

[0032] Fig.23 is a flowchart for explaining a crack detection method according to an exemplary embodiment of the present inventive concept.

[0033] Fig.24 is a flowchart for explaining a crack detection method according to an exemplary embodiment of the present inventive concept. DETAILED DESCRIPTION

[0034] Exemplary embodiments of the inventive concept provide a crack detection chip capable of accurately grasping a crack position of an edge region of a chip.

[0035] Exemplary embodiments of the inventive concept also provide a crack detection method capable of accurately grasping a crack position of an edge region of a chip.

[0036] Exemplary embodiments of the inventive concept will be described more fully below with reference to the accompanying drawings.Throughout the application, like reference numerals may refer to like elements.

[0037] In the following, reference will be made to Figures 1 to 5 A crack detection chip according to an exemplary embodiment of the inventive concept is described.

[0038] Figure 1 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept, Figure 2 is an exemplary embodiment according to the inventive concept. Figure 1 A cross-sectional view taken along line AA'.

[0039] Reference Figure 1 and Figure 2 , a crack detection chip according to an exemplary embodiment of the inventive concept includes a chip 10 , a guard ring 20 , a first edge wiring 100 , and a pad 200 .

[0040] The chip 10 may include constituent elements other than the chip 10. The chip 10 may be obtained by dicing a substrate into a certain size. That is, a plurality of chips 10 may be manufactured by cutting a wafer-level substrate. For example, the chip 10 may be manufactured by cutting a wafer of a semiconductor material such as silicon.

[0041] like Figure 1 As shown, the shape of the horizontal plane of the chip 10 may be a square. The shape of the chip 10 may be defined by four sides extending along the first direction X or the second direction Y. The first direction X and the second direction Y may be perpendicular to each other. However, the inventive concept is not limited thereto.

[0042] The upper surface of the chip 10 may be formed in the third direction Z. The third direction Z may be perpendicular to both the first direction X and the second direction Y. If the first direction X and the second direction Y are horizontal directions, the third direction Z may be a vertical direction.

[0043] The chip 10 may include an inner region Ra and an outer region Rb. The outer region Rb may be an edge region of the chip 10. That is, the outer region Rb may be a region formed along the outer edge of the chip 10. For example, the outer region Rb may refer to a region located outside the plurality of regions of the chip 10 with the guard ring 20 as a reference.

[0044] The inner region Ra may be a region surrounded by the outer region Rb. That is, the outer region Rb is located along the edge of the inner region Ra, and the outer region Rb may surround the inner region Ra. The configuration in which the outer region Rb surrounds the inner region Ra may be shown on a horizontal plane defined by the first direction X and the second direction Y. That is, as Figure 1 As shown, the outer region Rb may surround the inner region Ra and may be arranged in a ring form.

[0045] The inner region Ra and the outer region Rb may be defined by the guard ring 20. For example, the inner region Ra may be a region located inside the guard ring 20, and the outer region Rb may be a region located outside the guard ring 20. The region formed by the guard ring 20 may belong to neither the inner region Ra nor the outer region Rb.

[0046] The inner region Ra may be a region where elements actually working on the chip 10 are formed. In contrast, the outer region Rb may be a region where elements are not formed or a region where dummy elements are formed. The outer region Rb may be a place where there is a space margin if a damaged portion occurs when the wafer is diced into the chips 10. That is, the outer region Rb may be a scribe line.

[0047] Even if cracks occur in the outer region Rb (e.g., crack phenomenon of the chip 10), there will be no problem in the direct operation of the chip 10. However, when cracks occur in the inner region Ra of the chip 10 or cracks extend from the outer region Rb to the inner region Ra, the reliability of the operation of the chip 10 may be seriously damaged. Therefore, for the normal operation of the chip 10, the formation of cracks in the inner region Ra should be prevented.

[0048] The guard ring 20 may be located between the inner region Ra and the outer region Rb and may be used to prevent the cracks from extending from the outer region Rb to the inner region Ra.

[0049] In addition, the guard ring 20 can perform a moisture absorption action to prevent external moisture from entering the inside of the chip 10. That is, when moisture enters the inner region Ra of the chip 10, the elements located in the inner region Ra of the chip 10 may be damaged or malfunction. The guard ring 20 can prevent such a problem.

[0050] The guard ring 20 may be formed to form a closed curve along the edge of the chip 10. Here, "closed curve" refers to a curve whose end points touch each other, but does not mean that the extended portion of the guard ring 20 must have a curvature. For example, the horizontal arrangement shape of the guard ring 20 may be a polygon such as a rectangle, rather than a circle or an ellipse.

[0051] For example, the horizontal shape of the guard ring 20 may be a rectangle having four sides extending in the first direction X or the second direction Y. That is, the guard ring 20 may be formed inside the chip 10 along the edge of the chip 10 and have a rectangular horizontal shape similar to the shape of the chip 10. However, the inventive concept is not limited thereto. That is, as the shape of the chip 10 changes, the arrangement shape of the guard ring 20 may also change.

[0052] Alternatively, the shape of chip 10 and the arrangement shape of guard ring 20 may be different from each other. That is, since guard ring 20 is intended to protect inner region Ra of chip 10, guard ring 20 may be arranged in any form or shape as long as inner region Ra of chip 10 can be protected.

[0053] A plurality of guard rings 20 may be provided. When a plurality of guard rings 20 are provided, the possibility of preventing crack propagation is naturally increased, and the possibility of preventing moisture from penetrating into the inner area Ra may also be increased, compared to the case where the guard ring 20 has a single structure.

[0054] The protection ring 20 may include a first protection ring 21, a second protection ring 22, and a third protection ring 23. However, the present inventive concept is not limited thereto. The three protection rings 20 are merely exemplary, and the number of the protection rings 20 may vary according to needs and uses.

[0055] The first guard ring 21 may be in direct contact with the outer region Rb. The outer portion of the first guard ring 21 may be the outer region Rb. The second guard ring 22 may be located inside the first guard ring 21. Similarly, the third guard ring 23 may be located inside the second guard ring 22. That is, the third guard ring 23 may be in direct contact with the inner region Ra. The inner portion of the third guard ring 23 may be the inner region Ra.

[0056] The first guard ring 21 and the second guard ring 22 may be spaced apart from each other by a first distance d1. Similarly, the second guard ring 22 and the third guard ring 23 may be spaced apart from each other by a first distance d1. However, the inventive concept is not limited thereto.

[0057] The guard ring 20 may be formed deeply on the upper surface of the chip 10 along the third direction Z. Since the guard ring 20 is formed to prevent cracks in only the outer region Rb, external moisture, etc., the guard ring 20 may be isolated without being connected to other elements. In this regard, each of the plurality of guard rings 20 is substantially the same. That is, the first guard ring 21, the second guard ring 22, and the third guard ring 23 may be arranged to be spaced apart from each other and not in contact with each other.

[0058] The guard ring 20 may include a metal material, for example, the guard ring 20 may include, but is not limited to, at least one of tungsten, copper, cobalt, or aluminum.

[0059] The first edge wiring 100 may be located in the inner region Ra. That is, the first edge wiring 100 may be formed along the edge of the inner region Ra. Therefore, the first edge wiring 100 may be located inside the guard ring 20. Specifically, Figure 1 and Figure 2 In the embodiment, the first edge wiring 100 may be located inside the third guard ring 23 .

[0060] The first edge wiring 100 may be spaced apart from the guard ring 20 by a second distance d2. The second distance d2 may be greater than the first distance d1. However, the inventive concept is not limited thereto. The first distance d1 between the plurality of guard rings is actually a small space to prevent crack expansion. In contrast, the second distance d2 between the first edge wiring 100 and the guard ring 20 may be a certain distance or greater so as not to couple with each other. Therefore, the second distance d2 may be greater than the first distance d1.

[0061] Since the first edge wiring 100 is formed along the edge of the inner region Ra, the shape of the first edge wiring 100 can be arranged to correspond to the shape of the inner region Ra. Figure 1 As shown, the rectangular horizontal shape of the first edge wiring 100 may be similar to the shape of the inner area Ra.

[0062] The first edge wiring 100 may include a first wire 100_1, a second wire 100_2, a third wire 100_3, and a fourth wire 100_4. The first wire 100_1 and the second wire 100_2 may extend in the second direction Y and may be separated from each other in the first direction X. The third wire 100_3 and the fourth wire 100_4 may extend in the first direction X and may be separated from each other in the second direction Y. The first wire 100_1, the second wire 100_2, the third wire 100_3, and the fourth wire 100_4 may correspond to each side of a rectangle defined by the first edge wiring 100.

[0063] The first edge wiring 100 may be a buried wiring. That is, the first edge wiring 100 may not be exposed to the outside through the upper surface or the lower surface of the chip 10. That is, the upper surface of the first edge wiring 100 may not contact the upper surface of the chip 10, and the lower surface of the first edge wiring 100 may not contact the lower surface of the chip 10.

[0064] The width of the first edge wiring 100 in the third direction Z may be smaller than the width of the guard ring 20 in the third direction Z. As for the guard ring 20, the outer region Rb needs to be isolated from the largest or widest region to prevent cracks and moisture. In contrast, since the first edge wiring 100 is only used to detect whether there is a crack, the width of the first edge wiring 100 in the third direction Z may be smaller than the width of the guard ring 20 in the third direction Z.

[0065] The first edge wiring 100 may be electrically connected to the pad 200. The first edge wiring 100 may contact the internal wiring 110 to be electrically connected to the pad 200. The internal wiring 110 may be a wiring connecting the pad 200 and the first edge wiring 100 in a horizontal direction (eg, first direction X).

[0066] The internal wiring 110 may be connected to the pad 200 through the contact 210. The contact 210 may connect the pad 200 and the internal wiring 110 in a vertical direction (eg, a third direction Z).

[0067] The inner wiring 110, the contact 210, and the first edge wiring 100 may include a conductor. For example, the inner wiring 110, the contact 210, and the first edge wiring 100 may include a metal. The metal may include, for example, at least one of tungsten, copper, cobalt, or aluminum.

[0068] The above configuration of the internal wiring 110 and the contact 210 is only exemplary. That is, as long as the first edge wiring 100 and the pad 200 can be electrically connected to each other, at least one of the internal wiring 110 and the contact 210 can be omitted. Alternatively, the first edge wiring 100 and the pad 200 can also be electrically connected to each other through other elements other than the internal wiring 110 and the contact 210.

[0069] The pad 200 may be exposed on the upper surface of the chip 10. The pad 200 may function as a path through which other external modules may be connected to the inside of the chip 10. As described above, the pad 200 may be electrically connected to the first edge wiring 100. The pad 200 may transfer a clock signal and input and output signals to other constituent elements of the chip 10.

[0070] A plurality of pads 200 may be provided. Some of the plurality of pads 200 may be connected to the first edge wiring 100, and another portion may be connected to other components.

[0071] Figure 3 is used to explain an exemplary embodiment according to the inventive concept Figure 1 Conceptual layout of the connection between the crack detection chip and the time domain reflectometer (TDR) module. Figure 4 is used to explain an exemplary embodiment according to the inventive concept Figure 3 Conceptual diagram of the operation of the crack detection chip and TDR module. Figure 5 A graph of FIG. 1 is used to explain a reflected wave distance obtained according to detection of a reflected wave over time according to an exemplary embodiment of the inventive concept.

[0072] Reference Figures 3 to 5 , the first edge wiring 100 may be electrically connected to the TDR module 300 via the pad 200. The TDR module 300 may detect the crack CR of the edge region of the chip 10 using a time domain reflectometer.

[0073] For example, the TDR module 300 may apply an incident wave to the first edge wiring 100 through the pad 200. When the incident wave encounters the crack CR in the process of traveling through the first edge wiring 100, the incident wave may form a reflected wave.

[0074] That is, when the first edge wiring 100 is disconnected by the crack CR, different media such as the first edge wiring 100 and the crack CR may contact each other. A portion of the incident wave is reflected, and another portion of the incident wave is transmitted at the boundary surface between the two media. Therefore, a reflected wave is formed and travels in a direction opposite to the traveling direction of the incident wave.

[0075] The TDR module 300 may sense the reflected wave traveling in the opposite direction to the traveling direction of the incident wave. The TDR module 300 may calculate the first reflected wave distance L by calculating the application time point of the incident wave and the arrival time point of the reflected wave.

[0076] The first reflected wave distance L may refer to the distance from the position where the crack CR is formed to the TDR module 300 where the reflected wave arrives. The TDR module 300 detects the first reflected wave distance L and thus can accurately check the position where the crack CR occurs. The first reflected wave distance L may be calculated by the speed of the incident wave, the speed of the reflected wave, the arrival time, and the like. Figure 5 The point t=0 may refer to the time point when the reflected wave is generated.

[0077] The crack detection chip according to the present exemplary embodiment can accurately detect which part the crack is located, rather than simply determining whether there is a crack in the edge region. Therefore, it is possible to check which part of the chip 10 should be filled, and it is possible to track which process in the manufacturing process of the chip 10 may have a problem. In addition, the design of the chip 10 can be changed later in consideration of the durability of the chip 10.

[0078] That is, the crack detection chip according to the present exemplary embodiment can not only simply check and thus strengthen the durability of the current chip 10 , but also improve the design and process elements of the chip 10 to be produced in the future.

[0079] In the following, reference will be made to Figure 6 A crack detection chip according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions of similar elements will be omitted or simplified.

[0080] Figure 6 is a conceptual diagram for explaining operations of a crack detection chip and a TDR module according to an exemplary embodiment of the inventive concept.

[0081] Reference Figure 6 , the TDR module 300 cannot identify the first reflected wave distance L. That is, when the limit value of the minimum distance that the TDR module 300 can identify is greater than the first reflected wave distance L, the TDR module 300 cannot detect the first reflected wave distance L immediately.

[0082] In this case, the TDR module 300 may identify the second reflected wave distance L' instead of the first reflected wave distance L. The second reflected wave distance L' may be a distance obtained by adding the length of the first edge wiring 100 to the first reflected wave distance L. When the TDR module 300 identifies the second reflected wave distance L', since the second reflected wave distance L' is greater than the length of the first edge wiring 100, the difference obtained by subtracting the length of the first edge wiring 100 from the second reflected wave distance L' may be identified as the reflected wave distance L. In the crack detection chip according to the present exemplary embodiment, since the length of the first edge wiring 100 is already a fixed value, the crack CR can be easily detected despite the limited recognition capability of the TDR module 300.

[0083] and Figure 6 When the limit value of the minimum distance that the TDR module 300 can identify is greater than the second reflected wave distance L', a reflected wave distance increased by an integer multiple of the length of the first edge wiring 100 can be used. Thus, regardless of the hardware performance of the TDR module 300, the position of the crack CR can be accurately detected.

[0084] In the following, reference will be made to Figure 7A crack detection chip according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0085] Figure 7 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0086] Reference Figure 7 , the crack detection chip according to an exemplary embodiment of the inventive concept includes a second edge wiring 101 .

[0087] The second edge wiring 101 may have an uneven shape. The second edge wiring 101 may include a first portion P1 and a second portion P2.

[0088] The first portion P1 may be a portion spaced apart from the guard ring 20 (eg, the third guard ring 23) by a second distance d2. In contrast, the second portion P2 may be a portion spaced apart from the third guard ring 23 by a third distance d3. The third distance d3 may be greater than the second distance d2.

[0089] The second edge wiring 101 may include a plurality of first portions P1 and a plurality of second portions P2. The second edge wiring 101 may be formed by alternately extending the plurality of first portions P1 and the plurality of second portions P2. Therefore, the second edge wiring 101 may have an uneven zigzag shape.

[0090] The crack detection chip according to the present exemplary embodiment can ensure that the second edge wiring 101 having an uneven shape is better than the first edge wiring (for example, Figure 1 100) longer reflected wave path.

[0091] Thus, the TDR module 300 can obtain a reflected wave distance greater than the limit value of the minimum distance, which can be more easily identified by the TDR module 300. Therefore, the TDR module 300 can easily identify the reflected wave distance without adding the calculation process of increasing the integer multiple of the length of the second edge wiring 101 as described above.

[0092] The following will refer to Figure 8 and Fig. 9 A crack detection chip according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0093] Figure 8 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept, Fig. 9 is a diagram showing an exemplary embodiment according to the inventive concept Figure 8 Block diagram of the positional relationship between the crack detection chip, emission scope and detection unit.

[0094] Reference Figure 8 and Fig. 9 In the chip 10 of the crack detection chip according to an exemplary embodiment of the inventive concept, the current input module 400 is connected to the first edge wiring 100 through the pad 200 , and the first edge wiring 100 may be inspected by the radiation mirror 1000 .

[0095] The current input module 400 may apply a heat generating current to the first edge wiring 100. If a crack exists in the first edge wiring 100, heat may be generated by the heat generating current because the resistance of the cracked portion is higher than that of other portions without the crack.

[0096] The radiation mirror 1000 is located on the chip 10 and can inspect the chip 10 as a whole. The radiation mirror 1000 can inspect the heated portion and can detect the portion of the first edge wiring 100 that generates heat by the heating current. The radiation mirror 1000 can obtain information about the heating position in the form of an image. That is, the radiation mirror 1000 can obtain image information Ia including the heating position. The radiation mirror 1000 can send the image information Ia to the detection unit 410.

[0097] The detection unit 410 may receive current input information Ib from the current input module 400. The current input information Ib may include information about how much current the current input module 400 applies to the first edge wiring 100 or how much voltage is applied to the first edge wiring 100. In addition, the current input information Ib may include size information of the chip 10 and size information of the first edge wiring 100. However, the inventive concept is not limited thereto.

[0098] The detection unit 410 may accurately detect which portion of the chip 10 has a crack through the current input information Ib and the image information Ia.

[0099] In the following, reference will be made to Fig.10 A crack detection chip according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0100] Fig.10 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0101] Reference Fig.10 , the crack detection chip according to an exemplary embodiment of the inventive concept may include the third edge wiring 102 .

[0102] The third edge wiring 102 may include a first wiring 100a and a second wiring 100b. The first wiring 100a may be disposed between the second wiring 100b and the guard ring 20. The second wiring 100b may be located inside the first wiring 100a.

[0103] The first wiring 100a and the second wiring 100b may be disposed to be spaced apart from each other. The first wiring 100a and the second wiring 100b may be connected to the current input module 400 through the pad 200. The first wiring 100a and the second wiring 100b may be connected to the current input module 400 through different pads 200 independently of each other.

[0104] The current input module 400 can apply different currents or voltages to the first wiring 100a and the second wiring 100b. For example, the current input module 400 can apply a VDD voltage to the first wiring 100a, and can apply a VSS voltage to the second wiring 100b. Therefore, different sizes of heating currents can be applied to the first wiring 100a and the second wiring 100b.

[0105] Compared with the case where a single voltage is applied, when multiple voltages of different magnitudes are applied, if cracks occur, the radiation mirror 1000 can more clearly check the heat generation location. This is because the degree of heat generated by photons varies depending on the magnitude of the voltage or current.

[0106] Therefore, the crack detection chip according to the present exemplary embodiment can detect the crack position more accurately.

[0107] In the following, reference will be made to Fig.11 A crack detection chip according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0108] Fig.11 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0109] Reference Fig.11 , the first edge wiring 100 of the crack detection chip according to an exemplary embodiment of the inventive concept may be connected to both the TDR module 300 and the current input module 400 .

[0110] As described above, the TDR module 300 may detect cracks using a time domain reflectometer. The current input module 400 may detect cracks through the radiation mirror 1000 and the detection unit 410 .

[0111] The controller 500 may be connected to both the TDR module 300 and the current input module 400. The controller 500 may decide to simultaneously execute the crack detection method of the TDR module 300 and the crack detection method of the current input module 400 or to execute these crack detection methods sequentially. Alternatively, the controller 500 may perform control to execute only the crack detection method of the TDR module 300 or the crack detection method of the current input module 400.

[0112] For example, when the result of the crack detection method of the TDR module 300 is unclear, the controller 500 may perform the crack detection method using the current input module 400, the radiation mirror 1000, and the detection unit 410. Conversely, when the result of the crack detection method using the current input module 400, the radiation mirror 1000, and the detection unit 410 is unclear, the controller 500 may perform the crack detection method of the TDR module 300. The controller 500 may obtain a more accurate crack position by combining the two results.

[0113] Alternatively, when the reliability of the result of the crack detection method performed first is high, the controller 500 may not perform another crack detection method. Therefore, the resources used to perform crack detection can be minimized.

[0114] There may be a difference between the accuracy of the method of the TDR module 300 and the accuracy of the method of the radiation mirror 1000 depending on the type of crack. Therefore, by appropriately using these two methods through the controller 500, the crack detection chip according to the present exemplary embodiment can detect cracks more accurately and efficiently.

[0115] In the following, reference will be made to Fig.12 A crack detection chip according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0116] Fig.12 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0117] Reference Fig.12 , the first edge wiring 100 of the crack detection chip according to an exemplary embodiment of the inventive concept may be connected to a time propagation delay (tPD) unit 600 .

[0118] The tPD unit 600 may be connected to the first edge wiring 100 through the pad 200. The tPD unit 600 may apply an input signal to the first edge wiring 100. The input signal unit applied to the first edge wiring 100 by the tPD unit 600 travels along the first edge wiring 100 and may return again to the tPD unit 600. The tPD unit 600 may determine whether there is a crack by measuring the arrival time from the time point when the input signal is applied to the time point when the input signal returns again.

[0119] The tPD unit 600 may determine whether there is a crack by comparing the new arrival time with the reference arrival time. The reference arrival time is pre-stored and indicates an arrival time when there is no crack. If the new arrival time becomes longer than the reference arrival time, the tPD unit 600 may determine that there is a crack.

[0120] The controller 500 may first instruct the tPD unit 600 to determine whether a crack exists. Then, when the tPD unit 600 determines that a crack exists, the controller 500 may instruct the TDR module 300 to detect the correct position of the crack.

[0121] The crack detection chip according to the present exemplary embodiment first simply determines whether a crack exists through the tPD unit 600, and operates the TDR module 300 only when it is determined that a crack exists. Therefore, the efficiency of crack detection can be significantly improved.

[0122] In the following, reference will be made to Fig.13 and Fig.14 A crack detection chip according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0123] Fig.13 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept, Fig.14 is used to explain an exemplary embodiment according to the inventive concept Fig.13 Conceptual diagram of the operation of the crack detection chip and the time propagation delay (tPD) unit.

[0124] Reference Fig.13 and Fig.14 , the crack detection chip according to an exemplary embodiment of the inventive concept may include the segmented edge wiring 150 .

[0125] The segment edge wiring 150 may be disposed in an inner direction of the first edge wiring 100 . However, the inventive concept is not limited thereto. In an exemplary embodiment of the inventive concept, the segment edge wiring 150 may also be located in an outer direction of the first edge wiring 100 .

[0126] Unlike the first edge wiring 100, the segmented edge wiring 150 may be arranged in a non-closed curve shape along the edge of the chip 10. The segmented edge wiring 150 may include a first segmented edge wiring 150a, a second segmented edge wiring 150b, a third segmented edge wiring 150c, and a fourth segmented edge wiring 150d. However, the configuration of dividing the segmented edge wiring 150 into four parts is only an example, and the segmented edge wiring 150 may be segmented in various ways.

[0127] The first segment edge wiring 150a, the second segment edge wiring 150b, the third segment edge wiring 150c and the fourth segment edge wiring 150d can be electrically insulated from each other. In addition, the first segment edge wiring 150a, the second segment edge wiring 150b, the third segment edge wiring 150c and the fourth segment edge wiring 150d can be electrically connected to different pads 200.

[0128] The tPD unit 600 may include a first tPD unit 600a, a second tPD unit 600b, a third tPD unit 600c, and a fourth tPD unit 600d. For example, the first tPD unit 600a may be electrically connected to the first segment edge wiring 150a through the pad 200, the second tPD unit 600b may be electrically connected to the second segment edge wiring 150b through the pad 200. The third tPD unit 600c may be electrically connected to the third segment edge wiring 150c through the pad 200, and the fourth tPD unit 600d may be electrically connected to the fourth segment edge wiring 150d through the pad 200.

[0129] The first tPD unit 600a, the second tPD unit 600b, the third tPD unit 600c, and the fourth tPD unit 600d may apply a clock (CLK) signal and receive an output DQ0. Therefore, in the crack detection chip according to the present exemplary embodiment, the tPD unit 600 and the segmented edge wiring 150 may determine whether a crack exists by dividing the region. Therefore, it is possible to more accurately grasp in which region the crack is located.

[0130] The controller 500 determines which region has a crack through the first tPD unit 600 a , the second tPD unit 600 b , the third tPD unit 600 c , and the fourth tPD unit 600 d , and may determine the location of the crack through the TDR module 300 and the first edge wiring 100 based on the determination result.

[0131] Therefore, the crack detection chip according to the present exemplary embodiment simply determines whether there is a crack through four tPD units 600, and only when it is determined that there is a crack, the TDR module 300 is operated. Therefore, the efficiency of crack detection can be significantly improved. In addition, since the approximate position of the crack can be determined by the four tPD units 600 first, the position of the crack can be determined more accurately.

[0132] In the following, reference will be made to Fig.15 A crack detection chip according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0133] Fig.15 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0134] Reference Fig.15 , the first edge wiring 100 of the crack detection chip according to an exemplary embodiment of the inventive concept may be connected to both the current input module 400 and the tPD unit 600 .

[0135] As described above, the current input module 400 may detect a crack through the radiation mirror 1000 and the detection unit 410, and the tPD unit 600 may determine whether a crack exists through an input signal.

[0136] The controller 500 may first instruct the tPD unit 600 to determine whether a crack exists. Then, when the tPD unit 600 determines that a crack exists, the controller 500 instructs the current input module 400, the radiation mirror 1000, and the detection unit 410 to detect the correct position of the crack.

[0137] The crack detection chip according to the present exemplary embodiment first simply determines whether there is a crack through the tPD unit 600, and only when it is determined that there is a crack, the crack detection chip operates the current input module 400, the radiation mirror 1000 and the detection unit 410. Therefore, the efficiency of crack detection can be significantly improved.

[0138] In the following, reference will be made to Fig.16 A crack detection chip according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0139] Fig.16 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0140] Reference Fig.16 , the first edge wiring 100 of the crack detection chip according to an exemplary embodiment of the inventive concept may be connected to the TDR module 300 , the current input module 400 , and the tPD unit 600 .

[0141] As described above, the TDR module 300 may detect cracks using a time domain reflectometer. The current input module 400 may detect cracks through the radiation mirror 1000 and the detection unit 410. The tPD unit 600 may determine whether a crack exists through an input signal.

[0142] The controller 500 may first instruct the tPD unit 600 to determine whether a crack exists. Then, if the tPD unit 600 determines that a crack exists, the controller 500 may instruct the TDR module 300 or the current input module 400, the radiation mirror 1000 and the detection unit 410 to detect the correct position of the crack.

[0143] The controller 500 may decide to simultaneously or sequentially execute the crack detection method of the TDR module 300 and the crack detection method of the current input module 400. Alternatively, the controller 500 may perform control to execute only the crack detection method of the TDR module 300 or the crack detection method of the current input module 400.

[0144] Thus, by appropriately using these two methods via the controller 500 , the crack detection chip according to the present exemplary embodiment can detect cracks more accurately and efficiently.

[0145] In the following, reference will be made to Fig.17 A crack detection chip according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0146] Fig.17 is a layout diagram for explaining a crack detection chip according to an exemplary embodiment of the inventive concept.

[0147] Reference Fig.17 , the crack detection chip according to an exemplary embodiment of the inventive concept includes a segmented edge wiring 150 , and the first edge wiring 150 may be connected to the TDR module 300 , the current input module 400 , and the four tPD units 600 .

[0148] Four tPD units 600 (eg, first tPD unit 600a, second tPD unit 600b, third tPD unit 600c, and fourth tPD unit 600d) may correspond to first segment edge wiring 150a, second segment edge wiring 150b, third segment edge wiring 150c, and fourth segment edge wiring 150d, respectively.

[0149] The controller 500 determines in which area the crack exists through the first tPD unit 600a, the second tPD unit 600b, the third tPD unit 600c and the fourth tPD unit 600d, and can accurately determine the location of the crack through the TDR module 300, or the current input module 400, the radiation mirror 1000 and the detection unit 410 based on the determination result.

[0150] Therefore, the crack detection chip according to the present exemplary embodiment can first simply determine whether there is a crack through four tPD units 600, and only when it is determined that there is a crack, the crack detection chip operates the TDR module 300 or the current input module 400, the detection unit 410 and the radiation mirror 1000. Therefore, the efficiency of crack detection can be significantly improved. In addition, since the approximate position of the crack can be determined by multiple tPD units 600 first, the position of the crack can be determined more accurately.

[0151] In the following, reference will be made to Figures 3 to 5 and Fig.18 A crack detection method according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0152] Fig.18 is a flowchart for explaining a crack detection method according to an exemplary embodiment of the present inventive concept.

[0153] Reference Fig.18 , applying an incident wave (S110).

[0154] For example, refer to Figures 3 to 5 , the TDR module 300 may apply an incident wave to the first edge wiring 100 through the pad 200. The incident wave may form a reflected wave when encountering the crack CR while traveling through the first edge wiring 100.

[0155] Refer again Fig.18 , detecting the reflected wave (S120).

[0156] For example, refer to Figures 3 to 5 , the TDR module 300 can detect the reflected wave traveling in the opposite direction of the incident wave.

[0157] Refer again Fig.18 , calculate the arrival time (S130).

[0158] For example, refer to Figures 3 to 5, the TDR module 300 calculates the first reflected wave distance L by detecting the application time point of the incident wave and the arrival time point of the reflected wave. The first reflected wave distance L may refer to the distance from the position where the crack CR is formed to the TDR module 300 where the reflected wave arrives. The TDR module 300 detects the first reflected wave distance L and thus can accurately check the position where the crack CR occurs.

[0159] Refer again Fig.18 , calculate the crack position (S140).

[0160] For example, refer to Figures 3 to 5 , the first reflected wave distance L can be calculated by the speed of the incident wave, the speed of the reflected wave, the arrival time, etc.

[0161] In the following, reference will be made to Figures 9 to 11 , Fig.19 and Fig. 20 A crack detection method according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0162] Fig.19 is a flowchart for explaining a crack detection method according to an exemplary embodiment of the present inventive concept, Fig. 20 is used to explain in detail an exemplary embodiment according to the inventive concept Fig.19 Flowchart of the radiation mirror crack detection operation.

[0163] Reference Fig.19 and Fig. 20 , crack detection is performed through the radiation mirror 1000 (S50), and a heating current is applied (S51).

[0164] For example, refer to Figures 9 to 11 , the current input module 400 may apply a heat generating current to the first edge wiring 100. If a crack exists in the first edge wiring 100, heat may be generated by the heat generating current because the resistance of the portion having the crack is higher than that of other portions without the crack.

[0165] Refer again Fig. 20 , inspection is performed using the radiation mirror 1000 (S52).

[0166] For example, refer to Figures 9 to 11 The radiation mirror 1000 is located on the chip 10 and can inspect the chip 10 as a whole. The radiation mirror 1000 can inspect the heated portion and can detect the portion of the first edge wiring 100 that generates heat by the heat generating current.

[0167] Refer again Fig. 20 , detect the predicted crack occurrence position (S53).

[0168] For example, refer to Figures 9 to 11 , the radiation mirror 1000 can obtain information about the heating position in the form of an image. That is, the radiation mirror 1000 can obtain image information Ia including the heating position. The radiation mirror 1000 can send the image information Ia to the detection unit 410.

[0169] The detection unit 410 may receive the current input information Ib from the current input module 400. The detection unit 410 may detect a predicted crack generation position on a portion of the chip 10 where a crack occurs through the current input information Ib and the image information Ia.

[0170] Refer again Fig.19 , perform TDR crack detection (S100).

[0171] TDR crack detection refers to Fig.18 Since the crack detection method (S50) using the radiation mirror 1000 is different from the TDR crack detection method, different results can be obtained. Therefore, the crack detection method is first performed using the radiation mirror 1000 to detect the predicted crack generation position (S50), and a very accurate crack position can be detected by performing TDR crack detection (S100) based on the detection. However, the inventive concept is not limited thereto.

[0172] Alternatively, the crack detection method according to the present exemplary embodiment performs TDR crack detection (S100) to detect a predicted crack occurrence position, and based on the predicted crack occurrence position, a crack detection method can be performed by using the radiation mirror 1000 to detect an accurate crack position (S50).

[0173] In the following, reference will be made to Fig.12 , Fig.18 , Fig.21 as well as Fig. 22 A crack detection method according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0174] Fig.21 is a flowchart for explaining a crack detection method according to an exemplary embodiment of the present inventive concept, Fig. 22 is used to explain in detail an exemplary embodiment according to the inventive concept Fig.21 Flowchart of operations for determining whether a tPD crack exists.

[0175] Reference Fig.21 , determine whether there is a tPD crack (S40). Fig. 22 , applying an input signal (S41).

[0176] For example, refer to Fig.12, the tPD unit 600 may apply an input signal to the first edge wiring 100. The input signal applied to the first edge wiring 100 by the tPD unit 600 travels along the first edge wiring 100 and may return to the tPD unit 600 again.

[0177] Refer again Fig. 22 , detect the arrival time of the input signal (S42).

[0178] For example, refer to Fig.12 , the tPD unit 600 can determine whether there is a crack by measuring the arrival time from the time point when the input signal is applied to the time point when the input signal returns again. The tPD unit 600 can determine whether there is a crack by comparing the new arrival time with a pre-stored reference arrival time in the absence of a crack. If the new arrival time is longer than the reference arrival time, the tPD unit 600 can determine that there is a crack.

[0179] Refer again Fig.21 , perform TDR crack detection (S100).

[0180] TDR crack detection refers to Fig.18 The crack detection method according to the present exemplary embodiment first performs determination of whether a tPD crack exists (S40), and can perform TDR crack detection (S100) only when it is determined that a crack exists. Therefore, efficiency can be improved.

[0181] In the following, reference will be made to Fig.13 , Fig.18 , Fig.21 as well as Fig.23 A crack detection method according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0182] Fig.23 is a flowchart for explaining a crack detection method according to an exemplary embodiment of the present inventive concept.

[0183] Reference Fig.21 , a determination is performed as to whether a tPD crack exists (S40).

[0184] For example, refer to Fig.23 , applying the first input signal to the nth input signal (S43).

[0185] For ease of explanation, n is set to 4. Fig.13, the first tPD unit 600a, the second tPD unit 600b, the third tPD unit 600c and the fourth tPD unit 600d can apply a clock (CLK) signal to each of the first segment edge wiring 150a, the second segment edge wiring 150b, the third segment edge wiring 150c and the fourth segment edge wiring 150d, respectively.

[0186] Refer again Fig.23 , detecting the arrival time of the first input signal to the nth input signal (S44).

[0187] Reference Fig.13 , the first tPD unit 600a, the second tPD unit 600b, the third tPD unit 600c, and the fourth tPD unit 600d can detect their respective arrival times.

[0188] Refer again Fig.23 , determine the crack area (S45).

[0189] Reference Fig.13 Each tPD unit 600 can determine whether there is a crack by comparing the new arrival time with the reference arrival time. If the new arrival time is longer than the reference arrival time, it can be determined that there is a crack.

[0190] Refer again Fig.21 , perform TDR crack detection (S100).

[0191] The above TDR crack detection refers to Fig.18 The crack detection method according to the present exemplary embodiment first performs a determination of whether a tPD crack exists (S40) and only when it is determined that a crack exists can TDR crack detection (S100) be performed. Therefore, efficiency can be improved. In addition, since it can be known in which area of ​​the divided area the crack is located by determining whether a tPD crack exists (S40), higher efficiency can be achieved.

[0192] In the following, reference will be made to Fig.18 , Fig. 20 and Figure 22 to Figure 24 A crack detection method according to an exemplary embodiment of the present inventive concept is described. Repeated descriptions will be omitted or simplified.

[0193] Fig.24 is a flowchart for explaining a crack detection method according to an exemplary embodiment of the present inventive concept.

[0194] Reference Fig.24 , a determination is performed as to whether a tPD crack exists (S40).

[0195] The determination of whether a TDR crack exists refers to Fig. 22 or Fig.23 The method described in .

[0196] Subsequently, the radiation mirror crack detection is performed (S50).

[0197] Radiation mirror crack detection refers to Fig. 20 The method described in .

[0198] Subsequently, TDR crack detection is performed ( S100 ).

[0199] TDR crack detection refers to Fig.18 The method described in .

[0200] In the crack detection method according to an exemplary embodiment of the inventive concept, operations S50 and S100 may be performed in a different order.

[0201] While the inventive concept has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the inventive concept as set forth in the following claims.

Claims

1. A crack detection chip, comprising: A chip, the chip comprising an inner region and an outer region surrounding the inner region; A guard ring, wherein the guard ring is formed inside the chip along an edge of the chip, and the guard ring defines the inner area and the outer area; a first edge wiring, the first edge wiring being arranged in a closed curve along an edge of the inner area; as well as a pad exposed on a surface of the chip and connected to the first edge wiring, The first edge wiring is connected to a time domain reflectometer module, and the time domain reflectometer module is configured to apply an incident wave to the first edge wiring through the pad and detect a reflected wave formed in the first edge wiring to detect a location of a crack.

2. The crack detection chip according to claim 1, wherein: The guard ring includes a first guard ring and a second guard ring, and A distance between the first guard ring and the inner region is greater than a distance between the second guard ring and the inner region.

3. The crack detection chip according to claim 1, wherein: A direction perpendicular to the upper surface of the chip is a first direction, and A width of the guard ring in the first direction is greater than a width of the first edge wiring in the first direction.

4. The crack detection chip according to claim 1, wherein: The first edge wiring is connected to a current input module configured to apply a heat generating current to the first edge wiring, and The first edge wiring is inspected by a radiation mirror configured to sense heat generated by the heat generating current.

5. The crack detection chip according to claim 4, further comprising a second edge wiring separate from the first edge wiring, The pads include a first pad and a second pad that are separated from each other and connected to the first edge wiring and the second edge wiring, respectively, and The current input module applies heat generation currents of different magnitudes to the first edge wiring and the second edge wiring through the first pad and the second pad, respectively.

6. The crack detection chip according to claim 1, wherein: The first edge wiring is connected to a time propagation delay unit, which is configured to apply an input signal to the first edge wiring through the pad, and determine whether there is a crack by measuring an arrival time from a time point when the input signal is applied to a time point when the input signal returns again.

7. The crack detection chip according to claim 6, further comprising: a segmented edge wiring, the segmented edge wiring being arranged in a non-closed curve along an edge of the inner area and being separated from the first edge wiring, The segmented edge wiring includes a first segmented edge wiring to an nth segmented edge wiring separated from each other, The pads include first to n-th pads connected to the first segment edge wiring to the n-th segment edge wiring, respectively, and The time propagation delay unit includes first to n-th time propagation delay units, and the first to n-th time propagation delay units are configured to input first to n-th input signals to the first segment edge wiring to the n-th segment edge wiring respectively through the first pad to the n-th pad, so as to determine whether there is a crack, Wherein, n is a natural number greater than 1.

8. The crack detection chip according to claim 1, wherein: The time domain reflectometer module detects the position of the crack by detecting the time of the reflected wave formed in the first edge wiring, and The reflected wave moves along the entire first edge wiring at least once and is then detected by the time domain reflectometry module.

9. The crack detection chip according to claim 1, wherein: The first edge wiring includes a first portion located at a first distance from the guard ring, and a second portion located at a second distance from the guard ring, and The second distance is greater than the first distance.

10. The crack detection chip according to claim 9, wherein: The first portions and the second portions are alternately arranged on a closed curve of the first edge wiring.

11. A crack detection chip, comprising: a substrate comprising a first region and a second region; a guard ring separating the first region from the second region; an edge wiring formed to be buried in the second region; as well as a pad connected to the edge wiring and exposed to the upper surface of the substrate, wherein the edge wiring is connected to a time domain reflectometer module through the pad, and The time domain reflectometer module is configured to apply an incident wave to the edge wiring and detect a reflected wave formed in the edge wiring to detect a location of a crack.

12. The crack detection chip according to claim 11, wherein: The guard ring comprises metal.

13. The crack detection chip according to claim 11, wherein: The edge wiring is connected to a current input module configured to apply a heat generating current to the edge wiring, and The edge wiring is inspected by a radiation mirror configured to sense heat generated by the heat generating current.

14. The crack detection chip according to claim 13, wherein: The edge wiring is connected to a time propagation delay unit configured to apply an input signal to the edge wiring through the pad and determine whether there is a crack by measuring an arrival time from a time point when the input signal is applied to a time point when the input signal returns again.

15. The crack detection chip according to claim 11, wherein: The edge wiring is connected to a time propagation delay unit configured to apply an input signal to the edge wiring through the pad and determine whether there is a crack by measuring an arrival time from a time point when the input signal is applied to a time point when the input signal returns again.

16. A crack detection chip, comprising: Edge wiring, the edge wiring is arranged along the edge of the chip and formed into a closed curve shape; as well as a pad exposed to a surface of the chip and connected to the edge wiring, The edge wiring is connected to a time domain reflectometer module, and the time domain reflectometer module is configured to apply an incident wave to the edge wiring through the pad and detect a reflected wave formed in the edge wiring to detect a position of a crack.

17. The crack detection chip according to claim 16, wherein: The horizontal shape of the chip is a rectangle having first to fourth sides; and The edge wiring includes first to fourth lines corresponding to the first to fourth sides, respectively.

18. The crack detection chip according to claim 17, wherein: The first to fourth lines extend parallel to the first to fourth sides, respectively.

19. The crack detection chip according to claim 16, wherein: The edge wiring is buried in the chip. 20 . The crack detection chip according to claim 16 , further comprising a contact connecting the edge wiring and the pad.

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