Display device and method of manufacturing the same

Abstract

The present invention relates to a display device and a manufacturing method thereof. The display device includes: a first substrate including a display area in which a plurality of pixels are arranged and a light-transmitting area arranged in the display area; an interlayer insulating layer covering the display area and exposing the light-transmitting area, the inner sidewall of the interlayer insulating layer defining the light-transmitting area; and an inorganic film directly arranged on the first substrate in the light-transmitting area and overlapping the entire light-transmitting area. The size of the light-transmitting area is larger than the size of one pixel among the plurality of pixels.

Description

Technical Field

[0001] The present invention relates to a display device and a method for manufacturing the same. More particularly, the present invention relates to a display device including a light-transmitting area or hole and a method for manufacturing the same. Background Art

[0002] Recently, various portable electronic devices have included a camera function so that consumers carry only one electronic device having a camera function instead of carrying a camera separately.

[0003] Conventionally, a camera, a flash, a speaker, an optical sensor, and the like exist outside a display area of ​​an electronic device, and a space in which the electronic device can display an image is reduced.

[0004] The above information disclosed in this Background section is only for enhancement of understanding of the background of the invention and therefore the above information may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art. Summary of the invention

[0005] Research is being conducted to expand the space in which an image can be displayed by placing a device such as a camera in a display area. The present invention provides a manufacturing method of a display device and a display device manufactured by the manufacturing method, which can more effectively form a light-transmitting area or hole in a display area where a device such as a camera is located.

[0006] According to an exemplary embodiment of the inventive concept, a display device includes: a first substrate including a display area in which a plurality of pixels are arranged and a light-transmitting area arranged in the display area; an interlayer insulating layer covering the display area and exposing the light-transmitting area, an inner sidewall of the interlayer insulating layer defining the light-transmitting area; and an inorganic film directly arranged on the first substrate in the light-transmitting area and overlapping the entire light-transmitting area. The size of the light-transmitting area is larger than the size of one pixel among the plurality of pixels.

[0007] According to an exemplary embodiment of the present invention, a display device includes: a first substrate; a display area, including a plurality of pixels arranged on the first substrate, each of the plurality of pixels including a light emitting element, the light emitting element including a pixel electrode, an emission layer and a common electrode; a light-transmitting area, arranged in the display area, and including a first light-transmitting area and a second light-transmitting area surrounding the first light-transmitting area; an interlayer insulating layer, covering the display area and exposing the light-transmitting area, an inner side wall of the interlayer insulating layer defining the light-transmitting area; and a remaining portion, having a lifted shape separated from the first substrate in the second light-transmitting area, the remaining portion including a first layer, the first layer being formed of the same material as the common electrode and being disconnected from the common electrode by the inner side wall of the interlayer insulating layer.

[0008] According to an exemplary embodiment of the present invention, a manufacturing method of a display device is provided as follows. A transistor is formed on a first substrate including a display area and a light-transmitting area. An interlayer insulating layer is formed to cover the display area and expose the light-transmitting area. A planarizing insulating layer is formed on the interlayer insulating layer, wherein a pixel electrode is connected to the transistor through an opening of the planarizing insulating layer. A pixel defining layer including an opening exposing the pixel electrode is formed. A sacrificial layer including an organic material is formed in the light-transmitting area, wherein a sidewall of the sacrificial layer is spaced apart from an inner sidewall of the interlayer insulating layer. An emission layer and a common electrode are formed in the display area and the light-transmitting area. The sacrificial layer is separated from the first substrate by pulling the sacrificial layer with a vacuum adsorption member. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a schematic top view of a display device according to an exemplary embodiment of the present invention.

[0010] Figure 2 is along Figure 1 A cross-sectional view of a display device taken along line II-II'.

[0011] Figures 3 to 8 is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment of the present invention.

[0012] Fig. 9 It is shown in Figure 2 A cross-sectional view of an exemplary embodiment of a display device being packaged.

[0013] Fig.10 It is shown in Figure 2 A cross-sectional view of an exemplary embodiment of a display device being packaged.

[0014] Fig.11 It is shown in Figure 2 A cross-sectional view of an exemplary embodiment of a display device being packaged.

[0015] Fig.12 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.

[0016] Figures 13 to 15 is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment of the present invention.

[0017] Fig.16 It is shown in Fig.12 A cross-sectional view of an exemplary embodiment of a display device being packaged. DETAILED DESCRIPTION

[0018] Embodiments of the present invention will be described more fully hereinafter with reference to the accompanying drawings in which exemplary embodiments of the present invention are shown. As will be appreciated by those skilled in the art, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

[0019] In order to clearly explain the present invention, parts that are not directly related to the present invention are omitted, and the same reference numerals are attached to the same or similar constituent elements throughout the specification.

[0020] In addition, for better understanding and ease of description, the size and thickness of each configuration shown in the drawings are arbitrarily shown, but the present invention is not limited thereto. In the drawings, the thickness of layers, films, panels, regions, etc. are exaggerated for clarity. In the drawings, the thickness of some layers and regions are exaggerated for better understanding and ease of description.

[0021] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, the element may be directly on the other element, or there may be intervening elements. Conversely, when an element is referred to as being "directly" "on" another element, there are no intervening elements. In addition, in the specification, the words "on" or "above" mean being placed above or below an object part, and do not necessarily mean being placed above an object part based on the direction of gravity.

[0022] In addition, unless explicitly described to the contrary, the word “comprise” or “comprising” will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.

[0023] Furthermore, in this specification, the phrase "on a plane" means observing a target portion from the top, and the phrase "on a cross section" means observing a cross section formed by vertically cutting the target portion from the side.

[0024] Now, refer to Figure 1 A display device according to an exemplary embodiment is described.

[0025] Figure 1 is a schematic top view of a display device according to an exemplary embodiment of the present invention.

[0026] refer to Figure 1 , the display device includes a display area DA, a peripheral area PA and a light-transmitting area TA.

[0027] The display area DA is an area in which a plurality of pixels P are disposed and an image is displayed. Each of the plurality of pixels P includes a pixel circuit and a light emitting element electrically connected to the pixel circuit. The plurality of pixels P surround the light transmission area TA.

[0028] The light-transmitting area TA is arranged in the display area DA. The light-transmitting area TA has a higher light transmittance than the display area DA or the peripheral area PA, and is at least one optical member in which light is incident. Figure 2 The optical member 10 is an area in which light is emitted from the optical member 10 or an area in which light is emitted from the optical member 10. The optical member 10 may include a camera, a flash, an optical sensor, and the like.

[0029] The light-transmitting area TA may include a hole structure or an opening structure. The hole structure includes at least a substrate in the light-transmitting area TA. The opening structure includes an opening in the light-transmitting area TA.

[0030] The light-transmitting area TA has a size larger than that of the pixel P and is different from a light-transmitting zone for realizing transparent display in the pixel P. For example, a width of one pixel in a plan view may be 25 μm to 50 μm, and a diameter of the light-transmitting area TA may be about 3 mm.

[0031] The diameter of the light-transmitting area TA may be 60 times or more the width of one pixel.

[0032] exist Figure 1 In FIG. 1 , a circular light-transmitting area TA is illustrated as being arranged at the center of the upper side of the display area DA. The position, shape, and number of the light-transmitting area TA are not limited thereto. The light-transmitting area TA may have various shapes such as a quadrilateral polygon or an ellipse.

[0033] The peripheral area PA is an area surrounding the display area DA. A gate driver (not shown) and a data driver (not shown) transmitting a signal to each of the plurality of pixels P may be disposed in the peripheral area PA.

[0034] In the following, along Figure 1 A cross-sectional structure taken along line II-II' is described.

[0035] Figure 2 is along Figure 1 A cross-sectional view of a display device taken along line II-II'.

[0036] Figure 2 The case where the light-transmitting area TA includes a hole structure is shown. A pixel P1 adjacent to the light-transmitting area TA among the plurality of pixels P is illustrated. The first substrate 100 includes the light-transmitting area TA and the display area DA. The light-transmitting area TA includes a first light-transmitting area TA1 in which the optical member 10 is arranged and a second light-transmitting area TA2 surrounding the first light-transmitting area TA1. The second light-transmitting area TA2 may be an area for encapsulating the display area DA.

[0037] The light-transmitting area TA includes a first substrate 100 and an inorganic film 120 disposed directly on the first substrate 100. The first substrate 100 may include a material such as glass, metal, or an inorganic material. The first substrate 100 may be flexible to be bent, curved, or rolled.

[0038] The inorganic film 120 overlaps the entire light-transmitting area TA. The inorganic film 120 may be made of the same material as at least one of the buffer layer 101 and the gate insulating layer 103 described later. The inorganic film 120 may be formed together with at least one of the buffer layer 101 and the gate insulating layer 103. The thickness of the inorganic film 120 may be equal to or greater than the thickness of any one of the buffer layer 101 and the gate insulating layer 103. In example embodiments, the thickness of the inorganic film 120 may be equal to the thickness of the buffer layer 101. In example embodiments, the thickness of the inorganic film 120 may be equal to the sum of the thickness of the buffer layer 101 and the thickness of the gate insulating layer 103.

[0039] The present invention is not limited thereto. For example, the inorganic film 120 may be formed on the first substrate 100 in a process separate from the process of forming the buffer layer 101 and the gate insulating layer 103. The thickness of the inorganic film 120 formed in a process separate from the process of forming the buffer layer 101 and the gate insulating layer 103 may be equal to or greater than the thickness of the buffer layer 101, and less than the sum of the thickness of the buffer layer 101 and the thickness of the gate insulating layer 103.

[0040] Thus, according to exemplary embodiments, the thickness of the inorganic film 120 may be variously changed, and the thickness of the inorganic film 120 may be within a range of Figure 2 , but the thickness of the inorganic film 120 is not limited thereto.

[0041] In the display area DA, a buffer layer 101 is disposed on the first substrate 100. The buffer layer 101 can block moisture and foreign matter from penetrating from the first substrate 100 into the transistor 130 formed on the first substrate 100. The buffer layer 101 may include an inorganic material such as oxide or nitride. A pixel circuit 140 including a transistor 130 and a storage capacitor 150 is disposed on the buffer layer 101.

[0042] The transistor 130 includes a semiconductor layer 131, a gate electrode 132, a source electrode 133, and a drain electrode 134. The transistor 130 further includes a gate insulating layer 103 disposed between the semiconductor layer 131 and the gate electrode 132. An interlayer insulating layer 107 is disposed on the gate electrode 132, and a source electrode 133 and a drain electrode 134 are disposed on the interlayer insulating layer 107. For example, the interlayer insulating layer 107 covers the gate electrode 132, and the source electrode 133 and the drain electrode 134 penetrate the interlayer insulating layer 107 to be connected to the semiconductor layer 131.

[0043] The semiconductor layer 131 may include amorphous silicon, polycrystalline silicon, or an oxide semiconductor.

[0044] The gate insulating layer 103 and the interlayer insulating layer 107 may include an inorganic material including oxide or nitride. For example, the gate insulating layer 103 and the interlayer insulating layer 107 may include silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZnO 2 ).

[0045] The gate electrode 132, the source electrode 133, and the drain electrode 134 may include a low resistance metal material. For example, the gate electrode 132, the source electrode 133, and the drain electrode 134 may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), or titanium (Ti).

[0046] The storage capacitor 150 includes a lower electrode 151, an upper electrode 152, and an interlayer insulating layer 107 interposed therebetween. The lower electrode 151 may be the same layer as the gate electrode 132, and the upper electrode 152 may be the same layer as the source electrode 133 and the drain electrode 134.

[0047] A planarization insulating layer 109 is disposed on the pixel circuit 140, and a light emitting element 200 is disposed on the planarization insulating layer 109. The light emitting element 200 is electrically connected to the pixel circuit 140.

[0048] The light emitting element 200 includes a pixel electrode 210, an emission layer 220, and a common electrode 230. The pixel electrode 210 is connected to the drain electrode 134 of the transistor 130. The pixel electrode 210 may be a (semi) transparent electrode or a reflective electrode. For example, the (semi) transparent electrode may include ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), In 2 O 3 The reflective electrode may include a reflective film containing Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or a compound thereof, and the reflective electrode may further include a reflective film made of ITO, IZO, ZnO, In 2 O 3 The film formed.

[0049] A pixel defining layer 110 including an opening exposing a pixel electrode 210 is arranged on the pixel electrode 210. An emission layer 220 is arranged on the pixel electrode 210 and the pixel defining layer 110, and a common electrode 230 is arranged on the emission layer 220. The emission layer 220 includes a portion placed in the opening of the pixel defining layer 110. The present invention is not limited thereto. For example, the emission layer 220 may be separately formed in the opening of the pixel defining layer 110. The emission layer 220 may include an organic light-emitting material or an inorganic light-emitting material. The common electrode 230 may be a (semi) transparent electrode or a reflective electrode. At least one of the planarization insulating layer 109 and the pixel defining layer 110 may include an acrylic resin, a siloxane organic material, a silazane organic material, or the like.

[0050] The layer including the buffer layer 101, the gate insulating layer 103 and the interlayer insulating layer 107 made of inorganic materials is referred to as a lower inorganic layer. The layer including the emission layer 220 and the common electrode 230 is referred to as an upper emission layer. The thickness DP1 of the lower inorganic layer is greater than the thickness DP2 of the upper emission layer. For example, the thickness DP1 of the lower inorganic layer is about 1.5 μm, and the thickness DP2 of the upper emission layer is about 0.4 μm.

[0051] In the manufacturing process of the display device, the emission layer 220 and the common electrode 230 may be deposited in a state where only the inorganic film 120 is formed in the light-transmitting area TA of the first substrate 100. In this case, due to the step difference of the lower inorganic layer, the emission layer 220 and the common electrode 230 may be formed in the form of a fault at the boundary between the display area DA and the light-transmitting area TA. Figures 9 to 11 A structure for preventing penetration of moisture or the like through the surface of a layer disconnected at a boundary between the display area DA and the light-transmitting area TA will be described.

[0052] The optical member 10 is disposed in the first light-transmitting area TA1. External light may be incident on the optical member 10 through the first light-transmitting area TA1, or light may be emitted from the optical member 10 to the outside through the first light-transmitting area TA1.

[0053] Reference later Fig. 9 and Fig.10 The encapsulation member 330 is described as being arranged in the second light-transmitting area TA2. Figure 2 The packaging structure of the display device is omitted and will be referred to later. Figures 9 to 11 Describe the package structure.

[0054] Figures 3 to 8 is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment of the present invention. Figures 3 to 8 Involved Figure 1 and Figure 2 A method for manufacturing the above-mentioned display device.

[0055] refer to Figure 3 , a buffer layer 101 is formed on a first substrate 100 including a display area DA and a light-transmitting area TA. A semiconductor material may be formed on the buffer layer 101 and then patterned to form a semiconductor layer 131. A gate insulating layer 103 is formed on the buffer layer 101 and the semiconductor layer 131. A first conductive layer may be formed on the gate insulating layer 103 and then patterned to form a gate electrode 132 of the transistor 130 and a lower electrode 151 of the storage capacitor 150. The first conductive layer may include a low-resistance metal material. An interlayer insulating layer 107 is formed on the gate insulating layer 103, the gate electrode 132, and the lower electrode 151.

[0056] refer to Figure 4 , through an etching process, an opening H1 overlapping with the source region and the drain region of the semiconductor layer 131 is formed in the interlayer insulating layer 107 and the gate insulating layer 103 in the display area DA, and the buffer layer 101, the gate insulating layer 103, and the interlayer insulating layer 107 are removed in the light-transmitting area TA. The source region and the drain region of the semiconductor layer 131 may be exposed through the opening H1. A second conductive layer may be formed on the interlayer insulating layer 107, and then the second conductive layer may be patterned to form a source electrode 133 and a drain electrode 134 of the transistor 130 and an upper electrode 152 of the storage capacitor 150. The second conductive layer may include a low-resistance metal material. The source electrode 133 and the drain electrode 134 may be connected to the source region and the drain region of the semiconductor layer 131 exposed through the opening H1, respectively. The upper electrode 152 overlaps the lower electrode 151, and the interlayer insulating layer 107 is interposed between the upper electrode 152 and the lower electrode 151.

[0057] refer to Figure 5 The inorganic film 120 is formed in the light-transmitting area TA by depositing an inorganic material on the first substrate 100 and then patterning the inorganic material. The inorganic material may include oxide or nitride. Figure 5 A case is shown in which the inorganic film 120 is formed in a process separate from the process of forming the buffer layer 101 and the gate insulating layer 103 .

[0058] On the other hand, the inorganic film 120 may be formed together with at least one of the buffer layer 101 and the gate insulating layer 103. In this case, Figure 5 The process can be omitted and Figure 4 In the etching process, only the interlayer insulating layer 107 may be removed in the light-transmitting area TA without removing the buffer layer 101 and the gate insulating layer 103, or only the interlayer insulating layer 107 and the gate insulating layer 103 may be removed in the light-transmitting area TA.

[0059] Hereinafter, a case where the buffer layer 101 and the gate insulating layer 103 are formed in a Figure 4The case where the inorganic film 120 is removed in the etching process and then formed in the light transmitting area TA.

[0060] refer to Figure 6 , a first organic layer is formed in the display area DA and the light-transmitting area TA, and then the first organic layer is patterned to form a planarization insulating layer 109 in the display area DA, and a first sacrificial layer 109' is formed in the light-transmitting area TA. The first organic layer may include an acrylic resin, a siloxane organic material, a silazane organic material, or the like. The planarization insulating layer 109 includes an opening exposing the drain electrode 134 of the transistor 130. The first sacrificial layer 109' is patterned from the first organic layer to overlap with the first light-transmitting area TA1 in the light-transmitting area TA. For example, the first organic layer is removed in the second light-transmitting area TA2. Thereafter, a third conductive layer is formed on the planarization insulating layer 109, and then the third conductive layer is patterned to form a pixel electrode 210. The third conductive layer may include ITO, IZO, ZnO, In 2 O 3 , IGO or AZO, etc.

[0061] refer to Figure 7 , a second organic layer is formed in the display area DA and the light-transmitting area TA, and then the second organic layer is patterned to form a pixel defining layer 110 in the display area DA and a second sacrificial layer 110' in the light-transmitting area TA. The second organic layer may include an acrylic resin, a siloxane organic material, a silazane organic material, etc. The pixel defining layer 110 includes an opening exposing the pixel electrode 210. The second sacrificial layer 110' is arranged on the first sacrificial layer 109' and overlaps the first light-transmitting area TA1.

[0062] The emission layer 220 and the common electrode 230 are deposited in the display area DA and the light-transmitting area TA. The emission layer 220 and the common electrode 230 are formed to cover the first substrate 100 as a whole. In this case, due to the step difference of the lower inorganic layer including the buffer layer 101, the gate insulating layer 103 and the interlayer insulating layer 107, the emission layer 220 and the common electrode 230 are formed at the boundary between the display area DA and the light-transmitting area TA in the form of a fault. For example, the step difference is a height difference between the upper surface of the interlayer insulating layer 107 and the upper surface of the inorganic film 120 at the boundary between the first light-transmitting area TA1 and the display area DA. That is, the emission layer 220 and the common electrode 230 formed in the second light-transmitting area TA2 are disconnected from the emission layer 220 and the common electrode 230 formed in the display area DA, respectively. In addition, the emission layer 220 and the common electrode 230 are formed on the second sacrificial layer 110'. Hereinafter, the emission layer 220 and the common electrode 230 formed in the second light-transmitting area TA2 are referred to as the remaining part.

[0063] Figure 6 and Figure 7 It is illustrated that both the first sacrificial layer 109' and the second sacrificial layer 110' are formed. However, according to an exemplary embodiment, only one of the first sacrificial layer 109' and the second sacrificial layer 110' may be formed. For example, the second sacrificial layer 110' may be directly formed on the inorganic film 120 without Figure 6 The first sacrificial layer 109' is not formed in Figure 6 The first sacrificial layer 109' may be formed on the inorganic film 120, and the emission layer 220 and the common electrode 230 may be directly formed on the first sacrificial layer 109'. Figure 7 The second sacrificial layer 110' is not formed. The sacrificial layer includes at least one of the first sacrificial layer 109' and the second sacrificial layer 110'.

[0064] refer to Figure 8 , in a chamber (not shown) filled with a non-reactive gas such as nitrogen, the sacrificial layer is adsorbed by the vacuum adsorption member 20, and then pulled in a direction perpendicular to the upper surface of the first substrate 100 to be separated from the inorganic film 120. Since the sacrificial layer including an organic material has poor adhesion to the inorganic film 120 including an inorganic material, the sacrificial layer can be easily separated by physical force using the vacuum adsorption member 20.

[0065] The remaining portions of the emission layer 220 and the common electrode 230 arranged in the second light-transmitting area TA2 are in contact with the side surface of the sacrificial layer, and when the sacrificial layer is separated from the first substrate 100 by physical force, a lifting shape CF is formed in the remaining portion. The lifting shape CF is an open shape in which the remaining portion is separated from the inorganic film 120 below, and the gap between the remaining portion and the inorganic film 120 may gradually increase from the edge of the light-transmitting area TA to the first light-transmitting area TA1. For example, when the sacrificial layer is separated from the first substrate 100, the remaining portion is partially lifted from the inorganic film 120. The remaining portion may include a first layer formed of the same material as the common electrode 230. The remaining portion may further include a second layer formed of the same material as the emission layer 220.

[0066] When the emission layer 220 and the common electrode 230 remain in the light-transmitting area TA (especially in the first light-transmitting area TA1 where the optical member 10 is located), the transmittance of the light-transmitting area TA may be reduced. As described above, the emission layer 220 and the common electrode 230 are formed after the sacrificial layer is formed in the first light-transmitting area TA1, and then the sacrificial layer is removed, so that the transmittance of the light-transmitting area TA is prevented from being reduced.

[0067] Meanwhile, the emission layer 220 and the common electrode 230 formed in the light-transmitting area TA may be removed by an etching process using a laser or the like. When the emission layer 220 and the common electrode 230 formed in the light-transmitting area TA are removed by an etching process using a laser or the like, particles are generated. Therefore, a cleaning process for removing particles is required. In addition, the first substrate 100 may be damaged by the laser in the light-transmitting area TA.

[0068] However, when the emission layer 220 and the common electrode 230 formed in the light-transmitting area TA are removed by physically removing the sacrificial layer using the vacuum adsorption member 20 as described above, almost no particles are generated, and a cleaning process for removing particles is not required, thereby improving the manufacturing efficiency of the display device. In addition, there is no possibility that the first substrate 100 is damaged by laser, etc.

[0069] In the following, reference Figures 9 to 11 To describe the package through Figures 3 to 8 The manufacturing method of Figure 2 A method for displaying a device.

[0070] Fig. 9 It is shown in Figure 2 A cross-sectional view of an exemplary embodiment of a display device being packaged.

[0071] refer to Fig. 9 , the remaining portions of the emission layer 220 and the common electrode 230 in the second light-transmitting area TA2 are removed, and the encapsulation member 330 is formed in the second light-transmitting area TA2. And then, the second substrate 350 may be arranged on the display area DA and the light-transmitting area TA to cover the display area DA and the light-transmitting area TA.

[0072] The encapsulation member 330 surrounds the first light-transmitting area TA1 along the second light-transmitting area TA2. The encapsulation member 330 and the second substrate 350 are an encapsulation structure that encapsulates the display area DA so that moisture or foreign matter does not penetrate the light-emitting element 200 from the outside. The encapsulation member 330 may be a glass material including an inorganic material. The lower portion of the encapsulation member 330 contacts the inorganic film 120 in the second light-transmitting area TA2, and the upper portion of the encapsulation member 330 contacts the lower surface of the second substrate 350 in the second light-transmitting area TA2. The encapsulation member 330 including an inorganic material may be bonded to the inorganic film 120. For example, the encapsulation member 330 including an inorganic material contacts the inorganic film 120 to form an inorganic-inorganic bond. In addition, the second substrate 350 may include an inorganic material, and the encapsulation member 330 contacts the second substrate 350 to form an inorganic-inorganic bond.

[0073] The present invention is not limited thereto. For example, the packaging member 330 may be arranged along the above Figure 1The peripheral area PA described in the foregoing is formed in the peripheral area PA to surround the display area DA. An edge of the first substrate 100 and an edge of the second substrate 350 may be encapsulated and bonded by an encapsulation member in the peripheral area PA.

[0074] The optical member 10 is disposed in the first light-transmitting area TA1. External light enters the optical member 10, or light is emitted from the optical member 10 to the outside through the first substrate 100, the inorganic film 120, and the second substrate 350. Fig. 9 The light-transmitting area TA in is a hole structure.

[0075] Fig.10 It is shown in Figure 2 A cross-sectional view of an exemplary embodiment of a display device being packaged.

[0076] refer to Fig.10 , in such Fig. 9 In the packaged display device shown in FIG. 1 , a hole ( Fig.10 That is, the first substrate 100, the inorganic film 120 and the second substrate 350 are removed in the first light-transmitting area TA1 to form a hole. The hole passes through the first substrate 100, the inorganic film 120 and the second substrate 350 in the first light-transmitting area TA1. At this time, the inorganic film 120 remains in the second light-transmitting area TA2.

[0077] Since the hole is formed in the first light-transmitting area TA1 after the light emitting element 200 is encapsulated by the encapsulation member 330 and the second substrate 350 , the light emitting element 200 can be protected from particles and the like that may be generated in the process of forming the hole. The encapsulation member 330 can prevent particles and the like from penetrating into the light emitting element 200 .

[0078] The optical member 10 is disposed in the first light-transmitting area TA1. External light may be incident on the optical member 10 through the hole, or light may be emitted from the optical member 10 to the outside through the hole. Fig.10 The light-transmitting area TA in the image is an opening structure.

[0079] Fig.11 It is shown in Figure 2 A cross-sectional view of an exemplary embodiment of a display device being packaged.

[0080] refer to Fig.11, the remaining portions of the emission layer 220 and the common electrode 230 remaining in the second light-transmitting area TA2 are removed, and a protective layer 300 covering the display area DA and the light-transmitting area TA is formed. The protective layer 300 may be formed by chemical vapor deposition. For example, using chemical vapor deposition, a thin film layer may be deposited on the underlying layer with good step coverage. The protective layer 300 may include an inorganic layer 310 and an organic layer 320. The inorganic layer 310 may include an inorganic material including an oxide or a nitride. The organic layer 320 may include organic-inorganic composite particles.

[0081] The protective layer 300 may encapsulate the upper surface of the light emitting element 200 in the display area DA. In addition, the protective layer 300 may encapsulate the side surfaces of the emission layer 220 and the common electrode 230, that is, the side surfaces of the light emitting element 200 exposed by the step difference of the lower inorganic layer at the boundary between the display area DA and the light transmission area TA. The penetration of moisture or the like through the boundary surface of the emission layer 220 and the common electrode 230, which is exposed by disconnection at the boundary between the display area DA and the light transmission area TA due to the step difference of the lower inorganic layer, may be prevented.

[0082] The optical member 10 is disposed in the first light-transmitting area TA1. External light may be incident on the optical member 10, or light may be emitted from the optical member 10 to the outside through the first substrate 100, the inorganic film 120, and the protective layer 300. Fig.11 The light-transmitting area TA in is a hole structure.

[0083] In the following, reference Fig.12 A display device according to an exemplary embodiment is described, and reference is made to Figures 13 to 15 A method of manufacturing a display device according to an exemplary embodiment is described. Fig.16 Described in Fig.12 The exemplary embodiment in which the display device is packaged will be mainly described with reference to the above Figures 1 to 11 The difference.

[0084] Fig.12 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.

[0085] refer to Fig.12 ,and Figure 2 Compared with display devices, Fig.12 The display device does not include the inorganic film 120. When the first substrate 100 is made of a material such as glass or an inorganic material, the sacrificial layer is easily separated from the first substrate 100 by physical force during the manufacturing process of the display device. Therefore, the step of forming the inorganic film 120 is omitted, and the buffer layer 101 and the gate insulating layer 103 are completely removed from the light-transmitting area TA.

[0086] The remaining portions of the emission layer 220 and the common electrode 230 remaining in the second light-transmitting area TA2 remain in the manufacturing process of the display device. The remaining portions are directly disposed on the first substrate 100 and have a lifted shape CF separated from the first substrate 100.

[0087] Apart from these differences, the above reference Figure 1 and Figure 2 All features of the exemplary embodiments described can be applied to the Fig.12 Therefore, a redundant description thereof is omitted.

[0088] Figures 13 to 15 is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment of the present invention.

[0089] refer to Fig.13 , in the above description Figure 3 and Figure 4 After the manufacturing process, Figure 5 The process of forming the inorganic film 120 is omitted, and the process may be continued Figure 6 In other words, Figure 6 In comparison, Fig.13 In the embodiment, the first sacrificial layer 109 ′ is directly formed on the first substrate 100 in the first light-transmitting area TA1 .

[0090] refer to Fig.14 , the second sacrificial layer 110 ′ is formed on the first sacrificial layer 109 ′ directly formed on the first substrate 100 .

[0091] According to an exemplary embodiment, the second sacrificial layer 110' may be directly formed on the first substrate 100 without forming the first sacrificial layer 109'. Alternatively, the first sacrificial layer 109' may be formed on the first substrate 100. Fig.13 The emission layer 220 and the common electrode 230 may be formed directly on the first sacrificial layer 109'. Fig.14 The second sacrificial layer 110' is not formed.

[0092] refer to Fig.15 , the sacrificial layer may be adsorbed by the vacuum adsorption member 20 in a chamber (not shown) filled with a non-reactive gas such as nitrogen, and then the sacrificial layer may be separated from the first substrate 100 by a physical force. Since the first substrate 100 includes glass or an inorganic material, the sacrificial layer including an organic material may be easily separated from the first substrate 100. By separating the sacrificial layer from the first substrate 100, the upper surface of the first substrate 100 may be exposed in the first light-transmitting area TA1.

[0093] Apart from these differences, the above reference Figures 3 to 8All features of the exemplary embodiments described can be applied to the Figures 13 to 15 Therefore, a redundant description thereof is omitted.

[0094] Fig.16 It is shown in Fig.12 A cross-sectional view of an exemplary embodiment of a display device being packaged.

[0095] refer to Fig.16 The protective layer 300 covering the display area DA and the light-transmitting area TA is formed without removing the remaining portions of the emission layer 220 and the common electrode 230 from the second light-transmitting area TA2. The remaining portions are encapsulated by the protective layer 300, and moisture or foreign matter can be prevented from penetrating through the remaining portions along the boundaries of the layers.

[0096] In example embodiments, the common electrode 230 may be a reflective electrode, and thus, the emission layer 220 and the remaining portion of the common electrode 230 remaining in the second transmission area TA2 may function as a light shielding member that blocks light at a boundary between the display area DA and the first transmission area TA1.

[0097] Apart from these differences, the above reference Fig.11 All features of the exemplary embodiments described can be applied to the Fig.16 Therefore, redundant descriptions are omitted.

[0098] The referenced drawings and the specific description of the present invention disclosed so far are merely illustrative in the present invention, and they are used to describe the present invention, rather than to limit the meaning or scope of the present invention disclosed in the claims. Therefore, it can be easily understood by those skilled in the art that the present invention belongs to that various modifications and equivalent embodiments are possible. Therefore, the essential technical protection scope of the present invention will be determined based on the technical concept of the attached claims.

[0099] While the invention has been described with respect to what are presently considered to be exemplary embodiments that can be implemented, it is to be understood that the invention is not limited to the disclosed embodiments, but on the contrary is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. A display device, comprising: A first substrate including a display area in which a plurality of pixels are arranged and a light-transmitting area arranged in the display area; an interlayer insulating layer, covering the display area and exposing the light-transmitting area, wherein an inner sidewall of the interlayer insulating layer defines the light-transmitting area; an inorganic film disposed directly on the first substrate in the light-transmitting region and overlapping the light-transmitting region; as well as A protective layer continuously covers the display area and the light-transmitting area, wherein the size of the light-transmitting area is larger than the size of one pixel among the plurality of pixels, and The protection layer completely covers the inner side wall of the interlayer insulating layer defining the light-transmitting area.

2. The display device according to claim 1, wherein: The display area includes: a buffer layer disposed on the first substrate; and a transistor disposed on the buffer layer, and The inorganic film includes the same material as the buffer layer.

3. The display device according to claim 2, wherein: The thickness of the inorganic film is equal to the thickness of the buffer layer.

4. The display device according to claim 2, wherein: The transistor comprises: Semiconductor layer; a gate electrode; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, and The thickness of the inorganic film is equal to the entire thickness of the buffer layer and the gate insulating layer.

5. The display device according to claim 1, further comprising: A second substrate, covering the display area and the light-transmitting area; as well as a packaging member, arranged in the second light-transmitting area and packaging the display area, The light-transmitting region includes a first light-transmitting region in which an optical member is arranged and a second light-transmitting region surrounding the first light-transmitting region.

6. The display device according to claim 5, wherein: A lower portion of the encapsulation member contacts the inorganic film in the second light-transmitting region, and an upper portion of the encapsulation member contacts a lower surface of the second substrate in the second light-transmitting region.

7. The display device according to claim 5, further comprising: A hole penetrates the first substrate, the inorganic film, and the second substrate.

8. The display device according to claim 1, wherein: The protective layer encapsulates side surfaces of light emitting elements included in the plurality of pixels at a boundary between the display region and the light-transmitting region.

9. A display device, comprising: a first substrate; A display area, comprising a plurality of pixels disposed on the first substrate, each of the plurality of pixels comprising a light emitting element, the light emitting element comprising a pixel electrode, an emission layer and a common electrode; a light-transmitting area, arranged in the display area, and comprising a first light-transmitting area and a second light-transmitting area surrounding the first light-transmitting area; an interlayer insulating layer, covering the display area and exposing the light-transmitting area, wherein an inner sidewall of the interlayer insulating layer defines the light-transmitting area; as well as A remaining portion has a lifted shape separated from the first substrate in the second light-transmitting area, the remaining portion including a first layer formed of the same material as the common electrode and disconnected from the common electrode by the inner sidewall of the interlayer insulating layer.

10. A method for manufacturing a display device, comprising: forming a transistor on a first substrate including a display area and a light-transmitting area; forming an interlayer insulating layer covering the display area and exposing the light-transmitting area; forming a planarization insulating layer on the interlayer insulating layer, wherein the pixel electrode is connected to the transistor through an opening of the planarization insulating layer; forming a pixel defining layer including an opening exposing the pixel electrode; forming a sacrificial layer including an organic material in the light-transmitting region, wherein a sidewall of the sacrificial layer is spaced apart from an inner sidewall of the interlayer insulating layer; Depositing an emission layer and a common electrode in the display area and the light-transmitting area; and The sacrificial layer is separated from the first substrate by pulling the sacrificial layer with a vacuum suction member.

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