Display device and method of manufacturing the same

Abstract

The present disclosure relates to a display device, which includes: a substrate; a thin film transistor arranged on the substrate; a first insulating layer arranged on a source electrode and a drain electrode of the thin film transistor; a light emitting diode arranged on the first insulating layer to emit light toward the substrate; a second insulating layer arranged on the first insulating layer to surround the light emitting diode; an upper electrode arranged on the second insulating layer; and a driver IC chip arranged above the upper electrode to be connected to the upper electrode. According to the above configuration, the driver IC chip is arranged on the back side of the light emitting surface of the display panel, so that the frame can be minimized or omitted, and the manufacturing of the display device is easy and the manufacturing cost is reduced.

Description

Technical Field

[0001] The present disclosure relates to a display device for displaying an image using a light emitting diode and a method for manufacturing the same. Background Art

[0002] A display device is a device that converts and displays electronic information into visual information. Display devices may include not only televisions and monitors but also portable devices such as notebook PCs, smartphones, and tablet PCs.

[0003] The display device may include a light receiving display panel such as used in a liquid crystal display (LCD) or a self-luminous display panel that generates light corresponding to a data signal.

[0004] In particular, research on light emitting diodes (LEDs) has been actively conducted to realize self-luminous display panels. Light emitting diodes are devices that convert electrical signals into light such as infrared light or visible light by using the characteristics of compound semiconductors, and are used not only in home appliances, remote controllers, electronic displays, various automation equipment, but are also increasingly being used in small handheld electronic devices and large display devices. Summary of the invention

[0005] Technical issues

[0006] The present disclosure is directed to a display device and a method for manufacturing the same, in which a bezel is minimized by moving a driver IC region located at an edge of a display panel to a rear side of a light emitting surface of the display panel.

[0007] Technical Solution

[0008] One aspect of the present disclosure provides a display device, which includes: a substrate; a thin film transistor, which is arranged on the substrate and includes a semiconductor active layer, a gate electrode, a source electrode and a drain electrode; a first insulating layer, which is arranged on the source electrode and the drain electrode; a light-emitting diode, which is arranged on the first insulating layer to emit light toward the substrate, and the light-emitting diode includes a pn diode, an anode and a cathode; a second insulating layer, which is arranged on the first insulating layer to surround the light-emitting diode; an upper electrode, which is arranged on the second insulating layer; and a driver IC chip, which is arranged above the upper electrode to be connected to the upper electrode.

[0009] The thin film transistor and the light emitting diode may be arranged not to overlap each other.

[0010] The substrate may include a light emitting region and a non-light emitting region, the light emitting diode is arranged in the light emitting region, and the thin film transistor is arranged in the non-light emitting region.

[0011] The display device may further include a light absorbing layer disposed in the non-light emitting region.

[0012] A gate electrode may be disposed over the semiconductor active layer.

[0013] The light emitting diodes can be picked up individually or in plurality on the wafer and transferred to the first insulating layer by a transfer mechanism.

[0014] The light emitting diode may be fixed to the first insulating layer by means of an adhesive coating.

[0015] The light emitting diode may include a light emitting surface, and the light emitting surface may be in contact with the first insulating layer.

[0016] The anode and cathode may be positioned on an upper surface of the light emitting diode.

[0017] An IC chip may be connected to the upper electrode by ACF bonding.

[0018] The display device may further include an upper insulating layer disposed on the upper electrode.

[0019] The display device may further include a color conversion layer disposed below the light emitting diode.

[0020] Another aspect of the present disclosure provides a display device, which includes: a substrate, wherein a plurality of scan lines, a plurality of data lines and a sub-pixel area are arranged on one surface of the substrate, the plurality of scan lines are arranged along a first direction to transmit scan signals, the plurality of data lines are arranged along a second direction different from the first direction to transmit data signals, and the sub-pixel area is formed in an intersection area of ​​the scan lines and the data lines; and a light-emitting diode, which is arranged on the sub-pixel area to emit light toward the substrate, and the light-emitting diode includes a pn diode, an anode and a cathode, wherein the sub-pixel area includes an arrangement area, a repair area, a pixel electrode, a common ground electrode and a repair signal electrode, the light-emitting diode is arranged in the arrangement area, a repair light-emitting diode for replacing the light-emitting diode is arranged in the repair area, the signal electrode is used to provide a data signal to the light-emitting diode, the common ground electrode is used to provide grounding to the light-emitting diode and the repair light-emitting diode, and the repair signal electrode is used to provide a data signal to the repair light-emitting diode.

[0021] The anode of the repaired light emitting diode and the repaired signal electrode can be connected by metal ink.

[0022] The cathode and common ground electrode of the repaired LED can be connected by metallic ink.

[0023] A common ground electrode may be provided between the deployment area and the repair area.

[0024] Another aspect of the present disclosure provides a method for manufacturing a display device, the method comprising: forming a pixel circuit including a thin film transistor on a substrate; arranging a light emitting diode on the substrate for emitting light toward the substrate; forming a signal electrode for providing a data signal to the light emitting diode, a common ground electrode for providing grounding to the light emitting diode and a repair light emitting diode, and a repair signal electrode for providing a data signal to the repair light emitting diode; and performing a lighting test on the light emitting diode.

[0025] The method of manufacturing a display device may further include: when the lighting test fails, arranging a repair light emitting diode in the repair area.

[0026] The method for manufacturing a display device may further include: connecting a repair light emitting diode to the repair signal electrode and the common ground electrode through metal ink.

[0027] The method for manufacturing a display device may further include: disconnecting a signal electrode connected to an anode of a light emitting diode that fails to light up.

[0028] Beneficial Effects

[0029] According to the disclosed display device and manufacturing method thereof, since the driver IC chip is arranged on the back side of the light emitting surface of the substrate, the frame can be minimized or omitted. Therefore, by tiling the small-sized module display panels, a large-sized display device can be effectively constructed.

[0030] Since a common substrate is used instead of a TGV (through glass via) substrate and a conventional thin film transistor (TFT) process is used, manufacturing is easy and manufacturing cost can be reduced.

[0031] By using micro LEDs instead of organic light-emitting diodes, the durability, color reproduction, and brightness of a display device can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 An appearance of a display device according to an embodiment of the present disclosure is shown.

[0033] Figure 2 is an exploded perspective view of a display device according to an embodiment of the present disclosure.

[0034] Figure 3 is a schematic diagram showing a configuration of a display panel according to an embodiment of the present disclosure.

[0035] Figure 4 is shown to be set in Figure 3 Figure 2 is a circuit diagram of a sub-pixel circuit in a sub-pixel area of ​​a display panel.

[0036] Figures 5 to 10 1 is a cross-sectional view of a sub-pixel region of a display panel according to an embodiment of the present disclosure, shown sequentially in a stacking order.

[0037] Fig.11 is a cross-sectional view of a sub-pixel region of a display panel according to another embodiment of the present disclosure.

[0038] Fig.12 is a cross-sectional view of a sub-pixel region of a display panel according to another embodiment of the present disclosure.

[0039] Figures 13 to 17 are plan views and cross-sectional views schematically illustrating a pixel region according to an embodiment of the present disclosure, sequentially shown in a manufacturing order.

[0040] Fig.18 is a flowchart illustrating a method of manufacturing a display device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0041] The embodiments described in this specification and the configurations shown in the drawings are merely examples of preferred embodiments of the present disclosure, and various modifications may be made to replace the embodiments and drawings of this specification at the time of filing the present disclosure.

[0042] Unless otherwise clearly stated, the singular expressions used in the description may include plural expressions. For clarity, the shapes and sizes of the elements in the drawings may be exaggerated. Similar reference numerals in the various drawings of the present application represent parts or components for performing substantially the same function.

[0043] The terms “including” and “having” are intended to indicate the presence of the features, numbers, steps, operations, elements, components, or a combination thereof described in the specification, and do not exclude the presence or addition of one or more other features, numbers, steps, operations, elements, components, or a combination thereof.

[0044] It will be understood that, although the terms first, second, etc. may be used herein to describe various components, these components should not be limited by these terms.

[0045] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0046] Figure 1 An appearance of a display device according to an embodiment of the present disclosure is shown. Figure 2 is an exploded perspective view of a display device according to an embodiment of the present disclosure. Figure 3 is a schematic diagram showing a configuration of a display panel according to an embodiment of the present disclosure. Figure 4 is shown to be set in Figure 3Figure 2 is a circuit diagram of a sub-pixel circuit in a sub-pixel area of ​​a display panel. Figures 5 to 10 1 is a cross-sectional view of a sub-pixel region of a display panel according to an embodiment of the present disclosure, shown sequentially in a stacking order. Fig.11 is a cross-sectional view of a sub-pixel region of a display panel according to another embodiment of the present disclosure.

[0047] The display device 100 may display an electrical signal received from the outside as an image. Specifically, the display device 100 may control the color of each of a plurality of pixels in a predetermined display area so that a user may recognize the display area as one image.

[0048] Figure 1 A case is shown in which the display device 100 is supported by the base 102 installed at the lower portion thereof. Alternatively, the display device 100 may be mounted on a wall by a bracket or the like.

[0049] refer to Figure 2 , the display device 100 may include a display panel 110 , a support member 150 , a bottom plate 160 , and a housing 170 .

[0050] The housing 170 forms the appearance of the display device 100 and may include a frame 171 and a cover plate 172. The frame 171 and the cover plate 172 may be combined with each other to form an accommodation space. The display panel 110, the support member 150, the bottom plate 160, etc. may be arranged in the accommodation space.

[0051] The support member 150 may support the display panel 110 and the bottom plate 160 disposed between the bezel 171 and the cover plate 172. To this end, the support member 150 is detachably coupled to the bezel 171 to fix the display panel 110 and the bottom plate 160.

[0052] The bottom plate 160 may be connected to various components required for image display and sound output. That is, various printed circuit boards, input devices / output devices, etc. may be provided on the bottom plate 160. The bottom plate 160 may be formed of a metal material having excellent heat dissipation and strength.

[0053] The display panel 110 allows a user to visually recognize an image. The display panel 110 may refer to a panel that emits light having a frequency corresponding to an image signal received from the outside of the display device 100 or generated inside the display device 100.

[0054] refer to Figure 3, a plurality of data lines D1 to Dm, a plurality of scan lines S1 to Sn arranged in a row direction, and a plurality of sub-pixel regions SP may be provided on one surface of the display panel 110, the plurality of sub-pixel regions SP being formed adjacent to intersections of the data lines D1 to Dm and the scan lines S1 to Sn. A sub-pixel circuit may be provided in each of the sub-pixel regions SP. At least three sub-pixel regions SP adjacent to each other among the plurality of sub-pixel regions SP may constitute a pixel region P.

[0055] The data lines D1 to Dm may transmit data signals representing image signals to sub-pixel circuits in the sub-pixel region SP, and the scan lines S1 to Sn may transmit scan signals to the sub-pixel circuits in the sub-pixel region SP.

[0056] A scan signal may be sequentially applied to each of the scan lines S1 to Sn through the scan driver 130 , and a data voltage VDATA corresponding to an image signal may be applied to each of the data lines D1 to Dm through the data driver 140 .

[0057] According to an embodiment of the present disclosure, the scan driver 130 and the data driver 140 may be mounted above the substrate 111 of the display panel. Therefore, the frame (lateral width surrounding the pixel area) of the display panel 110 is minimized or omitted, so that the entire front surface of the display panel 110 can become the pixel area.

[0058] Figure 4 It is shown Figure 3 The equivalent circuit diagram of the sub-pixel circuit in the sub-pixel region SP in FIG. Figure 4 A sub-pixel circuit driven by a first scan line S1 and a first data line D1 is shown.

[0059] refer to Figure 4 , the sub-pixel circuit may include a light emitting diode LED, two transistors M1 and M2, and a capacitor Cst. The plurality of transistors M1 and M2 may be implemented as PMOS type transistors. However, such a circuit configuration is only an example of a sub-pixel circuit and is not limited to Figure 4 Circuit configuration.

[0060] The gate electrode of the switching transistor M2 may be connected to the scan line Sn, the source electrode of the switching transistor M2 may be connected to the data line Dm, and the drain electrode of the switching transistor M2 may be connected to one end of the capacitor Cst and the gate electrode of the driving transistor M1, and the other end of the capacitor Cst may be connected to the power supply voltage VDD. The source electrode of the driving transistor M1 may be connected to the power supply voltage VDD, the drain thereof may be connected to the anode 310 of the light emitting diode LED, and the cathode 320 of the light emitting diode LED may be connected to the reference voltage VSS, thereby emitting light based on the current applied from the driving transistor M1.

[0061] The reference voltage VSS connected to the cathode 320 of the light emitting diode LED is a voltage at a lower level than the power supply voltage VDD, and a ground voltage or the like may be used.

[0062] The operation of the sub-pixel circuit is as follows. First, when a scan signal is applied to the scan line Sn so that the switching transistor M2 is turned on, the data voltage can be transmitted to one end of the capacitor Cst and the gate electrode of the driving transistor M1. As a result, the gate-source voltage VGS of the driving transistor M1 can be maintained for a specific period of time through the capacitor Cst. In addition, the driving transistor M1 can excite the light emitting diode LED by applying a current ILED corresponding to the gate-source voltage VGS to the anode 310 of the light emitting diode LED.

[0063] At this time, when the high-level data voltage VDATA is transmitted to the gate electrode of the driving transistor M1, the gate-source voltage VGS of the driving transistor M1 is reduced, and a small amount of current ILED is applied to the anode 310 of the light-emitting diode LED, so that the light-emitting diode LED can emit a small amount of light to display a low-level gradation. On the other hand, when the low-level data voltage VDATA is transmitted, the gate-source voltage VGS of the driving transistor M1 increases, and a large amount of current ILED is applied to the anode 310 of the light-emitting diode LED, so that the light-emitting diode LED can emit a large amount of light to display a high grayscale. In this way, the level of the data voltage VDATA to be applied to each sub-pixel circuit in the sub-pixel circuit can be determined based on the image to be displayed.

[0064] The sub-pixel region P can be Figures 5 to 10 The method shown is formed.

[0065] like Figure 5 As shown, a substrate 111 is prepared, and a light absorbing layer 112 is formed on the substrate 111 .

[0066] The substrate 111 may be formed of various materials. For example, the substrate 111 may be formed of a SiO-based 2The substrate 111 is made of a transparent glass material. However, the substrate 111 is not necessarily limited thereto and may be formed of a transparent plastic material to have flexibility. The plastic material is selected from a group including polyethersulfone (PES), polyacrylate (PAR, polyacrylate), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate (PC), cellulose triacetate (TAC) and cellulose acetate propionate (CAP), which are insulating organic materials.

[0067] According to an embodiment of the present disclosure, the display panel 110 is a bottom emission type, and the substrate 111 may be formed of a transparent material.

[0068] The substrate 111 may include a light emitting region L1 in which the light emitting diode 300 is arranged so as to emit light, and a non-light emitting region L2 in which circuit elements such as the thin film transistor 200 are arranged so as not to emit light. A light absorbing layer 112 for improving visibility by absorbing external light may be formed on the non-light emitting region L2 of the substrate 111.

[0069] The light absorbing layer 112 may include a black inorganic material, a black organic material, or a black metal that absorbs light well.

[0070] For example, the light absorbing material may be made of carbon black, polyene-based pigments, azo-based pigments, azomethine-based pigments, diimmonium-based pigments, phthalocyanine-based pigments, quinone-based pigments, indigo-based pigments, thioindigo-based pigments, dioxadin-based pigments, quinacridone-based pigments, isoindolinone-based pigments, metal oxides, metal complexes, or other materials (e.g., aromatic hydrocarbons).

[0071] like Figure 6 As shown, a buffer layer 113 may be formed on the substrate 111. The buffer layer 113 may provide a flat surface on the upper portion of the substrate 111 and block foreign matter or moisture from penetrating the substrate 111. For example, the buffer layer 113 may include an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, and titanium nitride, or an organic material such as polyimide, polyester, and acrylic, and may be formed of a plurality of laminated portions of the illustrated materials.

[0072] The thin film transistor 200 and the light emitting diode 300 may be disposed on the buffer layer 113 .

[0073] The transistor 200 may include a semiconductor active layer 210, a gate electrode 220, a source electrode 230a, and a drain electrode 230b. The semiconductor active layer 210 may include a semiconductor material and may have a source region, a drain region, and a channel region between the source region and the drain region. The gate electrode 220 may be formed on the semiconductor active layer 210 to correspond to the channel region. The source electrode 230a and the drain electrode 230b may be electrically connected to the source region and the drain region of the semiconductor active layer 210, respectively.

[0074] The gate insulating layer 114 may be disposed between the semiconductor active layer 210 and the gate electrode 220. The gate insulating layer 114 may be formed of an inorganic insulating material.

[0075] The interlayer insulating layer 115 may be disposed between the gate electrode 220 and the source electrode 230a and between the gate electrode 220 and the drain electrode 230b. The interlayer insulating layer 115 may be formed of an organic insulating material or an inorganic insulating material, or may be formed by alternating an organic insulating material and an inorganic insulating material. A power supply voltage (VDD) 240 may be disposed on the interlayer insulating layer 155.

[0076] A first insulating layer 117 as a planarization layer is disposed on the source electrode 230a and the drain electrode 230b. The first insulating layer 117 may be formed of an organic insulating material or an inorganic insulating material, or may be formed by alternating an organic insulating material and an inorganic insulating material.

[0077] The embodiment of the present disclosure shows that the thin film transistor 200 is implemented as a top gate type in which the gate electrode 220 is disposed above the semiconductor active layer 210 , but the present disclosure is not limited thereto and the gate electrode 220 may be disposed below the semiconductor active layer 210 .

[0078] The first insulating layer 117 may have a recess 117a formed concavely to accommodate the light emitting diode 300. However, the present disclosure is not limited thereto, and the first insulating layer 117 may be formed to be flat so that the recess 117a is not formed.

[0079] The depth of the recess 117a may be determined by the height and viewing angle of the light emitting diode 300. According to an embodiment of the present disclosure, the recess 117a is recessed to have a substantially rectangular shape, but is not limited thereto and may have various shapes such as triangle, circle, cone, and ellipse.

[0080] like Figure 7As shown, the light emitting diode 300 may be arranged on the concave portion 117a of the first insulating layer 117. According to an embodiment of the present disclosure, the light emitting diode 300 may be a micro LED. Micro may refer to a size of 1 μm to 100 μm, but the present disclosure is not limited thereto and may be applied to a light emitting diode having a size larger or smaller than this size.

[0081] The micro LEDs may be picked up individually or in plurality on a wafer by a transfer mechanism and transferred to the substrate 111. Because such micro LEDs are made of inorganic materials, they have a faster reaction speed and can support low power and high brightness compared to organic light emitting diodes (OLEDs) using organic materials. In addition, organic light emitting diodes are susceptible to moisture and oxygen exposure, so they require a packaging process and have poor durability, but the micro LEDs themselves do not require a sealing process and have excellent durability.

[0082] The light emitting diode 300 may emit light of a predetermined wavelength belonging to a wavelength region from ultraviolet light to visible light. For example, the light emitting diode 300 may be a red, green, blue, and white LED or a UV LED. That is, a red LED, a green LED, and a blue LED are respectively arranged in adjacent sub-pixel regions SP, and three adjacent sub-pixel regions SP may form one pixel region P among the pixel regions P. One color may be determined by mixing red light, green light, and blue light generated in one pixel region P among the pixel regions P.

[0083] The light emitting diode 300 may include a pn diode, an anode 310 and a cathode 320. The anode 310 and / or the cathode 320 may be formed of a variety of conductive materials, including metals, conductive oxides, and conductive polymers. The anode 310 may be electrically connected to the signal electrode 510, and the cathode 320 may be electrically connected to the common ground electrode 530. The pn diode may include a p-doped portion on the anode 310 side, one or more quantum well portions, and an n-doped portion on the cathode 320 side. Alternatively, the doped portion on the cathode 320 side may be a p-doped portion, and the doped portion on the anode 310 side may be an n-doped portion.

[0084] The anode 310 and the cathode 320 may be positioned on the upper surface of the light emitting diode 300. On the contrary, the light emitting surface 380 of the light emitting diode 300 may be positioned on the lower surface of the light emitting diode 300. Therefore, the light emitting surface 380 of the light emitting diode 300 may be in contact with the first insulating layer 117, and the light emitting diode 300 may emit light to the substrate 111. That is, according to an embodiment of the present disclosure, the light emitting diode 300 may be a bottom emission type. Because the light emitting diode 300 is a bottom emission type, pixel circuit elements such as the thin film transistor 200 and the light emitting diode 300 are arranged not to overlap each other in the upper and lower directions. The light emitting diode 300 may be fixed to the first insulating layer 117 by an adhesive coating.

[0085] like Figure 8 As shown, the second insulating layer 118 may be disposed on the first insulating layer 117 to surround the light emitting diode 300. The second insulating layer 118 may be formed to correspond to the shape of the recess 117a. The second insulating layer 118 may include an organic insulating material. For example, the second insulating layer 118 may be formed of acrylic acid, polymethyl methacrylate (PMMA), benzocyclobutene (BCB), polyimide, acrylate, epoxy resin, and polyester, but is not limited thereto.

[0086] The upper electrode 500 may be disposed on the second insulating layer 118. The upper electrode 500 may connect various driver IC chips for driving the display panel 110 to the pixel circuit. For example, the driver IC chip may include a power line 551, a data IC 552, a gate IC 553, a reference voltage VSS 554, a touch sensing IC, a wireless controller, a communication IC, etc. The upper electrode 500 may be formed to correspond to the shape of the concave portion 117a.

[0087] The upper electrode 500 may include: a signal electrode 510, which connects the drain 230b of the thin film transistor 200 and the anode 310 of the light emitting diode 300 to apply a data signal to the light emitting diode 300; and a common ground electrode 530, which connects the cathode 320 of the light emitting diode 300 and the reference voltage VSS 554 to provide grounding for the light emitting diode 300.

[0088] A lighting test of the light emitting diode 300 may be performed after the upper electrode 500 is arranged as described above, and when the lighting of the light emitting diode 300 fails, a repair light emitting diode 700 ( Fig.16 and Fig.17 ). The arrangement of the repair light emitting diode 700 will be described later.

[0089] like Fig. 9 and Fig.10 As shown, an upper insulating layer 119a may be formed on the upper electrode. The upper insulating layer 119a may be formed of an inorganic insulating material. Fig.11 As shown, when the upper insulating layer 119b is formed of an organic insulating material, an upper surface thereof may be formed to be flat.

[0090] Various driver IC chips for driving the display panel 110, for example, a power line 551, a data IC 552, a gate IC 553, a reference voltage VSS 554, a touch sensing IC, a wireless controller, a communication IC, etc. are arranged above the upper electrode 500 and can be electrically connected to the upper electrode 500 through anisotropic conductive film (ACF) bonding.

[0091] After the ACF is arranged on the upper electrode 500 , the driver IC chip is brought into close contact with the ACF, and the temperature and viscosity of the ACF are changed by a laser beam or the like, so that the upper electrode 500 and the driver IC chip can be bonded.

[0092] According to the above configuration, the pixel circuit and various driver IC chips can be connected through the upper electrode 500 without forming a separate through hole in the substrate 111 , and the driver IC chip can be arranged on the back side of the light emitting surface of the substrate 111 .

[0093] Because the light emitting diode 300 is a bottom emission type, the first insulating layer 117, the interlayer insulating layer 115, the gate insulating layer 114 and the buffer layer 113 are all formed of transparent materials, and the light transmission efficiency can be maximized by appropriately designing the thickness D1, D2, D3 and D4 of each layer according to the refractive index of each layer.

[0094] Fig.12 is a cross-sectional view of a sub-pixel region of a display panel according to another embodiment of the present disclosure.

[0095] Unlike the above-described embodiment, the light emitting diode 300 arranged in each of the sub-pixel regions SP may be a monochromatic LED of the same color, and the display panel 110 may include a color conversion layer 190 capable of converting the color of light emitted from the light emitting diode 300. The color conversion layer 190 may be arranged on the interlayer insulating layer 115.

[0096] The color conversion layer 190 may include at least one phosphor that converts light emitted from the light emitting diode 300 into light in a different wavelength region.

[0097] Figures 13 to 17 are plan views and cross-sectional views schematically illustrating a pixel region according to an embodiment of the present disclosure, sequentially shown in a manufacturing order.

[0098] like Fig.13 As shown, the pixel region P according to the embodiment of the present disclosure may include three adjacent sub-pixel regions SP1, SP2, and SP3, and the sub-pixel regions SP1, SP2, and SP3 may include arrangement regions A1, A2, and A3 where light emitting diodes are arranged, and repair regions R1, R2, and R3 where replacement light emitting diodes for replacing light emitting diodes when the light emitting diodes cannot emit light are arranged. The arrangement regions A1, A2, and A3 and the repair regions R1, R2, and R3 may be formed on the concave portion 117a of the first insulating layer 117.

[0099] The three sub-pixel regions SP1, SP2 and SP3 are arranged along a first direction, and repair regions R1, R2 and R3 are set in a second direction perpendicular to the first direction according to arrangement regions A1, A2 and A3.

[0100] like Fig.14 As shown, the red light emitting diode 300R, the green light emitting diode 300G, and the blue light emitting diode 300B may be arranged in three arrangement areas A1, A2, and A3, respectively.

[0101] like Fig.15 As shown, a signal electrode 510, a common ground electrode 530 and a repair signal electrode 550 may be arranged on the first insulating layer 117, the signal electrode 510 is used to provide a data signal to the arranged light-emitting diodes 300R, 300G and 300B, the common ground electrode 530 is used to provide a ground to the arranged light-emitting diodes 300R, 300G, 300B and the repair light-emitting diode 700, and the repair signal electrode 550 is used to provide a signal to the repair light-emitting diode 700. Alternatively, the second insulating layer 118 ( Fig.10 The first insulating layer 117 may be disposed on the first insulating layer 117 to surround the disposed light emitting diodes 300R, 300G, and 300B, and the signal electrode 510, the common ground electrode 530, and the repair signal electrode 550 may be disposed on the second insulating layer 118.

[0102] The arrangement areas A1 , A2 , and A3 may be disposed between the signal electrode 510 and the common ground electrode 530 , and the repair areas R1 , R2 , and R3 may be disposed between the common ground electrode 530 and the repair signal electrode 550 .

[0103] The signal electrode 510 may be connected to the anodes 310 of the arranged light emitting diodes 300R, 300G, and 300B, and the common ground electrode 530 may be connected to the cathodes 320 of the light emitting diodes 300R, 300G, and 300B.

[0104] After the signal electrode 510 , the common ground electrode 530 , and the repair signal electrode 550 are formed as described above, a lighting test may be performed on the arranged light emitting diodes 300R, 300G, and 300B.

[0105] When the lighting test succeeds by emitting normal color light from all the arranged light emitting diodes 300R, 300G, and 300B, the upper insulating layer 119a and the upper insulating layer 119b ( Fig.10 etc.), and join the driver IC chip.

[0106] When the lighting test fails due to failure to emit normal color light from at least one of the arranged LEDs 300R, 300G, and 300B, a repair LED for replacing the defective LED is arranged on the substrate.

[0107] As an example, Fig.16 As shown, when the LED 300G is not lit, the repair LED 700 is arranged in the repair area R2. Fig.17 As shown, the metal ink 800 may be filled between the anode 710 of the repair light emitting diode 700 and the repair signal electrode 550 for electrical connection, and the metal ink 800 may be filled between the cathode 720 of the repair light emitting diode 700 and the common ground electrode 530 for electrical connection. The metal ink 800 as a conductive material may include gold (Au), silver (Ag), copper (Cu), etc.

[0108] The repair light emitting diode 700 is connected to the repair signal electrode 550 and the common ground electrode 530, and then the signal electrode 510 connected to the anode 310 of the defective light emitting diode 300G is cut off, so that the generation of the leakage current can be prevented.

[0109] Fig.18 is a flowchart illustrating a method of manufacturing a display device according to an embodiment of the present disclosure.

[0110] Will refer to Figures 1 to 18 A method of manufacturing a display device according to an embodiment of the present disclosure is briefly described.

[0111] A pixel circuit including a thin film transistor 200 is formed on a substrate 110 (910), and a bottom emission type light emitting diode 300 that emits light toward the substrate 110 is arranged (920).

[0112] The upper electrode 500 is formed on the light emitting diode 300. The upper electrode 500 may include: a signal electrode 510 for providing a data signal to the arranged light emitting diode 300; a common ground electrode 530 for providing a ground to the arranged light emitting diode 300 and the repair signal diode 700; and a repair signal electrode 550 for providing a data signal to the repair light emitting diode 700 (930).

[0113] After the upper electrode 500 is formed, a lighting test of the arranged light emitting diodes 300 is performed (940).

[0114] When the lighting test is successful, the upper insulating layer 119 a and the upper insulating layer 119 b are formed on the upper electrode 500 , and a driver IC chip for driving the display device 100 is bonded on the upper electrode 500 ( 980 ).

[0115] When the lighting test fails, the repair LED 700 is arranged in the repair region R1, the repair region R2, and the repair region R3 (950), and the metal ink 800 is filled to connect the repair LED 700 to the repair signal electrode 550 and the common ground electrode 530 (960).

[0116] The signal electrode 510 connected to the anode 310 of the defective light emitting diode 300 is cut off to disconnect the leakage current (970), the upper insulating layer 119a and the upper insulating layer 119b are formed on the upper electrode 500, and the driver IC chip for driving the display device 100 is bonded to the upper electrode 500 (980).

[0117] While the present disclosure has been described in detail with reference to exemplary embodiments, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the present disclosure.

Claims

1. A display device, comprising: substrate; a thin film transistor disposed on the substrate and comprising a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode; a first insulating layer, the first insulating layer being arranged on the source electrode and the drain electrode; a light emitting diode disposed on the first insulating layer to emit light toward the substrate and including a pn diode, an anode and a cathode; a second insulating layer, the second insulating layer being arranged on the first insulating layer to surround the light emitting diode; an upper electrode disposed on the second insulating layer; as well as a driver IC chip arranged above the upper electrode to be connected to the upper electrode, Among them, the upper electrode includes a signal electrode and a common ground electrode, the signal electrode is connected to the drain electrode of the thin film transistor and the anode of the light-emitting diode to apply a data signal to the light-emitting diode, and the common ground electrode is connected to the light-emitting diode and a reference voltage of the driver IC chip to provide grounding for the light-emitting diode.

2. The display device according to claim 1, wherein: The thin film transistor and the light emitting diode are arranged not to overlap each other.

3. The display device according to claim 1, wherein: The substrate includes a light emitting region and a non-light emitting region, the light emitting diode is arranged in the light emitting region, and the thin film transistor is arranged in the non-light emitting region.

4. The display device according to claim 3, further comprising: A light absorbing layer is arranged in the non-light emitting region.

5. The display device according to claim 1, wherein: The gate electrode is disposed over the semiconductor active layer.

6. The display device according to claim 1, wherein: The light emitting diodes are picked up individually or in plurality on a wafer by a transfer mechanism and transferred to the first insulating layer.

7. The display device according to claim 1, wherein: The light emitting diode is fixed to the first insulating layer by an adhesive coating.

8. The display device according to claim 1, wherein: The light emitting diode includes a light emitting surface, and the light emitting surface is in contact with the first insulating layer.

9. The display device according to claim 1, wherein: The anode and the cathode are positioned on an upper surface of the light emitting diode.

10. The display device according to claim 1, wherein: The IC chip is connected to the upper electrode by ACF bonding.

11. The display device according to claim 1, further comprising: An upper insulating layer is disposed on the upper electrode.

12. A method for manufacturing a display device, comprising: forming a pixel circuit including a thin film transistor on a substrate; Arranging a light emitting diode on the substrate for emitting light toward the substrate; forming an upper electrode, the upper electrode including a signal electrode for providing a data signal to the light emitting diode, a common ground electrode for providing a ground to the light emitting diode and a repair light emitting diode, and a repair signal electrode for providing the data signal to the repair light emitting diode; as well as performing a lighting test on the light emitting diode, When the lighting test is successful, a driver IC chip is bonded to the upper electrode to connect to the upper electrode. And wherein, the signal electrode connects the drain electrode of the thin film transistor and the anode of the light emitting diode to apply the data signal to the light emitting diode, and the common ground electrode connects the light emitting diode and the reference voltage of the driver IC chip to provide grounding to the light emitting diode.

13. The method for manufacturing a display device according to claim 12, further comprising: When the lighting test fails, the repair light emitting diode is arranged in a repair area.

14. The method for manufacturing a display device according to claim 13, further comprising: The repair light emitting diode is connected to the repair signal electrode and the common ground electrode through metal ink.

15. The method for manufacturing a display device according to claim 13, further comprising: The signal electrode connected to the anode of the light-emitting diode that fails to light up is disconnected.

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