LED Display

Abstract

The present invention discloses a light emitting diode display, which comprises a first carrier, a second carrier, a light emitting unit, a frame and a protective layer. The first carrier comprises a first electrode and a second electrode. The second carrier is formed under the first carrier and comprises a first contact and a second contact located on a side close to the first carrier. The light emitting unit is formed on the first carrier and directly contacts the first electrode, the frame surrounds the light emitting unit, and the protective layer covers the light emitting unit. The interval between the first electrode and the second electrode is smaller than the interval between the first contact and the second contact.

Description

Technical Field

[0001] The invention relates to a light emitting diode display, in particular to a light emitting diode display comprising two carrier plates. Background Art

[0002] LED displays are a type of display that uses LEDs as display pixels. Since LEDs can emit light, they do not require an additional backlight module as a light source, unlike traditional liquid crystal displays. Therefore, LED displays can be thinner and lighter than traditional liquid crystal displays, and have considerable development potential in the commercial market. Summary of the invention

[0003] The present invention discloses a display, which comprises a first carrier, a second carrier, a light-emitting unit, a frame and a protective layer. The first carrier comprises a first electrode and a second electrode. The second carrier is formed under the first carrier and comprises a first contact and a second contact located on a side close to the first carrier. The light-emitting unit is formed on the first carrier and directly contacts the first electrode, the frame surrounds the light-emitting unit, and the protective layer covers the light-emitting unit. The interval between the first electrode and the second electrode is smaller than the interval between the first contact and the second contact.

[0004] The present invention discloses a display, which comprises a first carrier, a second carrier, a third carrier, a first light-emitting unit, a second light-emitting unit, a frame and a protective layer. The second carrier is formed on the first carrier, and the third carrier is formed on the first carrier and does not directly contact the second carrier. The first light-emitting unit is formed on the second carrier, and the second light-emitting unit is formed on the third carrier. The frame surrounds the first light-emitting unit, and the protective layer covers the first light-emitting unit.

[0005] In order to make the above and other purposes, features and advantages of the present invention more clearly understood, embodiments are given below with reference to the accompanying drawings for detailed description as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 is a schematic diagram of a light emitting diode display according to an embodiment of the present invention;

[0007] Figure 2A is a schematic diagram of a display unit according to an embodiment of the present invention;

[0008] Figure 2B for Figure 2A A cross-sectional schematic diagram of a display unit in FIG.

[0009] Figure 3A A schematic diagram of a manufacturing process of a display unit according to an embodiment of the present invention;

[0010] Figure 3B for Figure 3A A partial circuit diagram of the upper surface of the flexible board;

[0011] Figure 4 A schematic diagram of a manufacturing process of a display unit according to an embodiment of the present invention;

[0012] Figure 5 A schematic diagram of a manufacturing process of a display unit according to an embodiment of the present invention;

[0013] Fig. 6A A bottom view of a light emitting diode display according to an embodiment of the present invention;

[0014] Figure 6B for Fig. 6A A cross-sectional schematic diagram of a light emitting diode display;

[0015] Figure 7 is a cross-sectional schematic diagram of a display unit in one embodiment of the present invention;

[0016] Figure 8 FIG. 4 is a cross-sectional schematic diagram of a display unit according to an embodiment of the present invention.

[0017] Explanation of symbols

[0018] 10000, 20000: light emitting diode display; 1000, 1001, 1002, 1003, 1004, 1005, 1006, 1007, 1008, 1009, 2000,

[0020] 2001, 2002, 2003, 2004, 2005, 2006, 2007, 2008, 2009, 3000A,

[0021] 3000B, 3000C, 3000D, 4000, 5000: display unit;

[0022] 100, 101, 102, 100_1, 100_2: pixel units;

[0023] 10L, 20L, 30L: light-emitting semiconductor stack;

[0024] 10E, 20E, 30E: electrode layer;

[0025] 100A: pixel area;

[0026] 10, 20, 30: light-emitting unit;

[0027] 200, 200A, 200B, 200C, 300, 300A: carrier board;

[0028] 202N, 202P, 201_N, 301_N, 201_P1, 201_P2, 201_P3, 301_P1, 301_P2, 301_P3, 301_N1, 301_N2, 301_N3: contacts;

[0029] 203P1, 203P2, 203P3, 203N: electrode wire;

[0030] 10N, 20N, 30N, 10N', 20N', 30N': N-type electrode;

[0031] 10P, 20P, 30P, 10P', 20P', 30P': P-type electrode;

[0032] 3001, 3002: concave;

[0033] 201, 301, 400, 400A, 400B, 400C, 400D: electrical contact layer;

[0034] 40: protective layer;

[0035] 50: frame;

[0036] 60: conductive layer;

[0037] 500: control circuit;

[0038] AA', BB': line segments;

[0039] d, d1, d2, d3: interval; DETAILED DESCRIPTION

[0040] The following embodiments will illustrate the concept of the present invention with the accompanying drawings. In the drawings or descriptions, similar or identical parts use the same reference numerals, and in the drawings, the shape or thickness of the elements may be enlarged or reduced.

[0041] Figure 1 A schematic diagram showing the light emitting diode display of the present invention. The light emitting diode display 10000 includes display units 1000-1009, 2000-2009, and each display unit also includes a plurality of pixel units 100, each pixel unit 100 can be independently controlled to emit light of a specific light intensity and color, and these pixel units have the same or similar optical properties, such as luminous intensity and luminous angle. The light emitting diode display 10000 includes different numbers of display units in a column in the horizontal direction and a row in the vertical direction. Specifically, each column includes 10 display units (such as display units 1000-1009), and each row includes 2 display units (such as display units 1000, 2000).

[0042] Figure 2A A schematic diagram of a display unit according to an embodiment of the present invention. Figure 2A The display unit 1000 includes pixel units 100, 100_1, and 100_2 arranged at a fixed interval along a direction perpendicular to the line segment AA'. The number of pixel units 100 can be adjusted according to demand. For example, in one embodiment, the plurality of pixel units included in the display unit 1000 can provide a resolution of 1920×1080 pixels. Figure 2A In the embodiment, there is a pixel pitch d between the pixel unit 100_1 and the pixel unit 100_2. In one embodiment, the pixel pitch d is less than 1.4 mm, for example, the pitch d is between 0.2 mm and 1.3 mm, such as 0.75 mm, 0.8 mm, 1 mm, and 1.25 mm. The pixel unit 100 includes a red light emitting unit 10, a green light emitting unit 20, and a blue light emitting unit 30 arranged in sequence along a direction parallel to the line segment AA'. In other embodiments, the order of these light emitting units can also be adjusted according to needs, for example, the red light emitting unit 10, the blue light emitting unit 30, and the green light emitting unit 20 are arranged in sequence from top to bottom.

[0043] Figure 2B for Figure 2A Schematic diagram of a cross section of a display unit along line segment AA' in FIG. The display unit 1000 includes an electrical contact layer 400, a first carrier 200, a second carrier 300 and a pixel unit 100. The hardness of the second carrier 300 is greater than that of the first carrier 200. The pixel unit 100 includes a conductive layer 60, a frame 50, a red light emitting unit 10, a green light emitting unit 20, and a blue light emitting unit 30 surrounded by the frame 50, and a protective layer 40 within the range surrounded by the frame 50, wherein the protective layer 40 is in direct contact with the inner side (the side close to the light emitting unit) of the frame 50. The uppermost surface of the protective layer 40 is substantially coplanar with the uppermost surface of the frame 50, and the protective layer 40 further covers and directly contacts each light emitting unit. In one embodiment, the protective layer 40 only exists in the pixel unit 100, and does not exist between different pixel units, that is, the protective layer 40 only contacts the inner side (the side close to the light emitting unit) of the frame 50. In one embodiment, the protective layer 40 covers the entire surface of the display unit 1000 or at least covers multiple pixel units 100, so that the protective layer 40 contacts the inner and outer sides of the frame 50 (the side away from the light-emitting unit) at the same time, and the protective layer 40 also covers the top surface of the frame 50.

[0044] These light-emitting units are electrically connected to the circuit layer (not shown) on the surface of the first carrier 200 through the conductive layer 60, and are electrically connected to the conductive circuit (not shown) in the first carrier 200 and the conductive circuit (not shown) in the second carrier 300 and the electrical contact layer 400 through the circuit layer, so that these light-emitting units can receive external signals and emit light according to the external signals. The conductive circuits in the first carrier 200 and the second carrier 300 can pass through the first carrier 200 and the second carrier 300 vertically or obliquely in the first carrier 200 and the second carrier 300. The material of the conductive layer 60 can be a material with conductive properties, such as solder, anisotropic conductive film (ACF) or anisotropic conductive paste (ACP).

[0045] The light-emitting units 10, 20, 30 each include a light-emitting semiconductor stack 10L, 20L, 30L and an electrode layer 10E, 20E, 30E. Each light-emitting semiconductor stack 10L, 20L, 30L each includes a substrate (not shown), a first-type semiconductor layer (not shown, such as an N-type semiconductor layer), an active layer (not shown), and a second-type semiconductor layer (not shown, such as a P-type semiconductor layer). In one embodiment, the light-emitting semiconductor stacks 10L, 20L, 30L have different shapes, such as the upper surfaces of at least two of the light-emitting semiconductor stacks 10L, 20L, 30L have different roughness, or at least two of the light-emitting semiconductor stacks 10L, 20L, 30L have different sizes. The substrate can be a crystal growth substrate, such as a crystal growth substrate such as sapphire, silicon carbide, gallium nitride or gallium arsenide, suitable for epitaxially growing the first-type semiconductor layer, the active layer and the second-type semiconductor layer. The substrate may also be a material not used for epitaxial growth, such as a hard substrate such as a ceramic or sapphire substrate, or a flexible substrate such as glass fiber or triazine resin (BT). The crystal growth substrate may be thinned or removed during the manufacturing process of the light-emitting semiconductor stack. Each electrode layer 10E, 20E, 30E is electrically connected to the first-type semiconductor layer and the second-type semiconductor layer to provide a channel for external electrical connection. The electrode layer may be a single-layer or multi-layer structure containing metal, such as a single-layer or multi-layer structure containing copper (Cu), nickel (Ni), gold (Au), silver (Ag), titanium (Ti), tungsten (W) and cobalt (Co). The first-type semiconductor layer and the second-type semiconductor layer are, for example, cladding layers or confinement layers, which can provide electrons and holes respectively, so that the electrons and holes combine in the active layer to emit light. The first-type semiconductor layer, the active layer, and the second-type semiconductor layer may include III-V semiconductor materials, such as Al x In yGa (1-x-y) N or Al x In y Ga (1-x-y) P, where 0≤x, y≤1; (x+y)≤1. Depending on the material of the active layer, the light-emitting semiconductor stack can emit a red light with a peak value between 610nm and 650nm, a green light with a peak value between 530nm and 570nm, or a blue light with a peak value between 450nm and 490nm. In one embodiment, the light-emitting unit includes a wavelength conversion material, such as a dye, a phosphor, or a quantum dot material. If a phosphor is selected as the wavelength conversion material, some adjacent phosphor particles are in contact with each other, while some adjacent phosphor particles are not in contact with each other. The particle size (maximum or average particle size) of the phosphor is between 5um and 100um. The phosphor includes but is not limited to yellow-green phosphor and red phosphor. The components of the yellow-green phosphor are, for example, aluminum oxide (YAG or TAG), silicate, vanadate, alkaline earth metal selenide, or metal nitride. The components of the red phosphor are, for example, silicate, vanadate, alkaline earth metal sulfide, metal nitride, or a mixture of tungstate and molybdate families. In one embodiment, an insulating layer composed of cured white paint is also included between the soft board and the active layer. The white paint has a viscosity of about 0.5 to 1000 Pa·s and a hardness (Shore D) between about 40 and 90. Alternatively, the white paint has a viscosity of about 100 to 1000 Pa·s and a hardness (Shore D) between about 30 and 60. The white paint includes a base material and a plurality of reflective particles (not shown) dispersed in the base material. The base material has a silicone-based matrix material, an epoxy-based matrix material, or both, and has a refractive index (n) between about 1.4 and 1.6 or 1.5 and 1.6. The substrate material may include polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer. The reflective particles include titanium dioxide, silicon dioxide, aluminum oxide, zinc oxide, or zirconium dioxide. When the light emitted by the active layer hits the insulating layer, the light will be reflected. Specifically, the reflection generated in the insulating layer is diffuse reflection.

[0046] The protective layer 40 can be penetrated by the light from the light-emitting unit. The material of the protective layer 40 includes silicone, epoxy, polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), SU8, acrylic resin, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide (Polyetherimide), fluorocarbon polymer (Fluorocarbon Polymer), aluminum oxide (Al2O3), SINR, spin-on glass (SOG). In one embodiment, the protective layer 40 includes scattering particles, such as titanium dioxide, zirconium oxide, zinc oxide or aluminum oxide.

[0047] The frame 50 can absorb part of the light emitted by the pixel unit to prevent the light of the pixel unit from being emitted from the side of the pixel unit, so that the light mainly leaves the pixel unit 100 in a direction perpendicular to the flexible board 200, thereby achieving the effect of concentrating the light emission direction. The frame 50 is configured to absorb light and includes an opaque material. The frame 50 can be composed of a structure composed of a base material coated with black paint, or a structure composed of a base material mixed with black paint. The base material includes metal (such as chromium) or polymer. The polymer includes silicone, epoxy resin, polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), Su8, acrylic resin, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide (Polyetherimide), polyurethane (PU), polydimethylsiloxane (PDMS), acrylic, or bismaleimide triazine resin (Bismaleimide Triazine Resin, BT), etc. The black coating is such as black ink or dark pigment, carbon, or titanium oxide, etc. In one embodiment, the frame 50 includes resin and titanium oxide dispersed in the resin, and the titanium oxide absorbs light. The weight percentage of the titanium oxide relative to the frame 50 is not less than 60%. In another embodiment, the weight percentage of the titanium oxide relative to the frame 50 is between 20% and 60%. In one embodiment, the thickness of the frame 50 is between 10 μm and 50 μm.

[0048] The first carrier 200 is a bendable carrier. In one embodiment, the first carrier 200 can withstand a radius of curvature less than 50 mm, such as 25 mm or 32 mm. The materials of the first carrier 200 include polyester (Polyester), polyimide (Polyimide, PI), BT resin (Bismaleimide Triazine) and PTFE resin (Polytetrafluoroethylene). Among them, the glass transition temperature of BT resin is 180°C, and the glass transition temperature of polyimide resin is 250°C, which has better thermal stability. The second carrier 300 is a stacked multi-layer structure, each single layer contains the same or different metal circuits and the layers are electrically conductive. The material of the second carrier 300 includes hard materials such as phenolic resin (Phenolresins, PF) and glass fiber epoxy resin (FR4). In one embodiment, a metal pad with a side length between 50 μm and 60 μm is disposed on the first carrier 200 and is located at a position corresponding to the conductive layer 60, and a metal pad with a side length between 55 μm and 85 μm is disposed on the second carrier 300, for example, located below the light-emitting units 10, 20, and 30. For example, a 50 μm×50 μm metal pad is disposed on the first carrier 200 and is located at a position corresponding to the conductive layer 60, and a 75 μm×75 μm metal pad is disposed on the second carrier 300 and is located below the light-emitting units 10, 20, and 30, for example, at a position corresponding to the conductive layer 60 or a position not directly corresponding to the conductive layer 60. Figure 2B In the structure, the circuits in the display unit 1000 are dispersedly arranged on the first carrier board 200 and the second carrier board 300 by stacking the first carrier board 200 and the second carrier board 300, thereby reducing the difficulty of circuit design, and the first carrier board 200, which can be equipped with a smaller metal pad, is in direct contact with the light-emitting unit. Compared with the second carrier board 300 equipped with a larger metal pad, more metal pads can be arranged using the first carrier board 200, that is, under the same surface area, more light-emitting units can be arranged on the first carrier board 200 to achieve a higher resolution. In addition, because the metal pads on the first carrier board 200 occupy a smaller area, when the same number of light-emitting units are arranged on the first carrier board 200 and the second carrier board 300 of the same area, the first carrier board 200 can provide more space for the metal circuits on the surface, reducing the difficulty of circuit design and avoiding the signal interference problem caused by too narrow circuit spacing. The electrical contact layer 400 may be a single layer or a multi-layer structure including metal, such as a single layer or a multi-layer structure including copper (Cu), nickel (Ni), gold (Au), silver (Ag), titanium (Ti), tungsten (W) and cobalt (Co).

[0049] Figure 3A FIG. 1 is a schematic diagram of a manufacturing process of a display unit according to an embodiment of the present invention. Figure 3B for Figure 3A FIG. 2 is a partial circuit diagram of the upper surface of the first carrier board 200. Figure 3A The light-emitting units 10, 20, and 30 are arranged on the upper surface of the first carrier 200, and an electrical contact layer 201 is disposed on the lower surface of the first carrier 200. The electrical contact layer 201 is connected to the circuit on the upper surface of the first carrier 200 (for example Figure 3B The N-type contact 202N and the N-type electrode line 203N in the light emitting unit are electrically connected, and are used to provide an electrical connection path between the light emitting unit and the outside. The electrical contact layer 201 includes an N-type contact 201_N, and P-type contacts 201_P1, 201_P2, and 201_P3. The sizes of the two contacts can be the same or different. The N-type contact 201_N is electrically connected to the N-type semiconductor layer of the light emitting unit 10, 20, and 30 to form a total N-type contact structure, the P-type contact 201_P1 is electrically connected to the P-type semiconductor layer of the light emitting unit 10, the P-type contact 201_P2 is electrically connected to the P-type semiconductor layer of the light emitting unit 20, and the P-type contact 201_P3 is electrically connected to the P-type semiconductor layer of the light emitting unit 30. In another embodiment, the P-type semiconductor layers of the light-emitting units 10, 20, and 30 are connected to the same P-type contact to form a common P-type contact structure, and the N-type semiconductor layers of the light-emitting units 10, 20, and 30 are connected to different N-type contacts (not shown). In another embodiment, the light-emitting units 10, 20, and 30 are packaged into a package body and then bonded to the first carrier 200 (not shown). Figure 3B , the light emitting units 10, 20, 30 are placed in the pixel area 100A, and each light emitting unit is connected to an N-type electrode and a P-type electrode disposed on the first substrate 200. Specifically, referring to Figure 3B, the light-emitting unit 10 is connected to the P-type electrode 10P and the N-type electrode 10N, the light-emitting unit 20 is connected to the P-type electrode 20P and the N-type electrode 20N, and the light-emitting unit 30 is connected to the P-type electrode 30P and the N-type electrode 30N. The distance between the P-type electrodes 10P, 20P, and 30P is substantially the same as the distance between the N-type electrodes 10N, 20N, and 30N, for example, the interval d1 between the electrode 10P and the electrode 20P is substantially the same as the interval d2 between the electrode 10N and the electrode 20N. The distances between electrodes of the same type are also substantially the same, for example, the interval between the electrode 10P and the electrode 20P is substantially equal to the interval between the electrode 20P and the electrode 30P. Among them, the N-type electrodes 10N, 20N, and 30N are connected to the N-type contact 202N via the N-type electrode line 203N also disposed on the first carrier 200, so that the light-emitting units 10, 20, and 30 are connected to the same N-type contact 202N. In one embodiment, the P-type electrode and the N-type electrode have a side length between 55 μm and 85 μm, such as 70 μm, 75 μm, 80 μm or 82 μm, or between 70 μm and 95 μm, such as 72 μm, 85 μm or 90 μm. The P-type electrode 10P is connected to the P-type electrode line 203P1 disposed on the first carrier 200, the P-type electrode 20P is connected to the P-type electrode line 203P2 disposed on the first carrier 200, and the P-type electrode 30P is connected to the P-type electrode line 203P3 disposed on the flexible board 200, so that the light-emitting units 10, 20, 30 can control the light-emitting characteristics through different electrode lines, such as the light-emitting intensity, the time point of light-emitting, and the length of light-emitting time. More specifically, the light-emitting characteristics of the light-emitting unit 10 can be controlled by the P-type electrode line 203P1 and the electrode line 203N, while the light-emitting characteristics of the light-emitting unit 20 can be controlled by the P-type electrode line 203P2 and the electrode line 203N, and the light-emitting characteristics of the light-emitting unit 30 can be controlled by the P-type electrode line 203P3 and the electrode line 203N. The N-type contact 202N and the P-type contact 202P connected to the light-emitting units are respectively electrically connected to the electrical contact layer 201 on the back through the conductive circuit (not shown) in the first carrier 200, and the control signal is transmitted to the light-emitting unit. The P-type electrode lines 203P1 and 203P3 are connected to the P-type contacts (not shown) of other pixels and other positions on the first carrier 200, and then the control signal is transmitted to the light-emitting unit on the first carrier 200 through the conductive circuit (not shown) in the first carrier 200 through the P-type contact and the P-type electrode line. More specifically, the electrode lines 203P1 and 203P3 are each electrically connected to a light emitting unit that can emit light of the same color. In one embodiment, the conductive circuits in the first carrier 200 are perpendicular to the P-type electrode lines 203P1 and 203P3.In one embodiment, the left and right sides of the lower surface of the first carrier 200 (the surface close to the hard board 300) include a plurality of receiving points (not shown), which are used to receive external signals provided to the P-type electrode signal, and the upper and lower sides of the lower surface of the first carrier 200 (the two sides perpendicular to the left and right sides) also include a plurality of receiving points (not shown) arranged in parallel to receive external signals provided to the N-type electrode signal. After the combination between the light-emitting units 10, 20, 30 and the first carrier 200 is completed, the electrical and optical properties can be tested without waiting for the subsequent manufacturing process steps to be completed. During this stage, if the light-emitting unit is found to be abnormal, such as flickering and other abnormal lighting conditions, the abnormal light-emitting unit or the abnormal first carrier 200 can be replaced. If the test is not performed until the protective layer 40 is covered, it will be very difficult to replace a single light-emitting unit because of the covering of the protective layer 40. For another example, if the test is performed after the light emitting units 10 , 20 , 30 and the first carrier 200 are connected to the second carrier 300 , if the first carrier 200 is found to be abnormal and needs to be replaced, a large number of light emitting units and production time will be wasted.

[0050] Figure 4 FIG. 1 is a schematic diagram of a manufacturing process of a display unit according to an embodiment of the present invention. Figure 4 , after completing Figure 3A After the structure is formed, a second carrier 300 is provided. An electrical contact layer 400 is provided on the lower surface of the second carrier 300, and an electrical contact layer 301 is provided on the upper surface. The electrical contact layer 201 is connected to the electrical contact layer 301 on the second carrier 300 through a conductive material such as solder, so that the light-emitting unit can sequentially receive external signals through the circuit layer (not shown) on the surface of the first carrier 200, the conductive circuit (not shown) in the first carrier 200, the electrical contact layer 201, the electrical contact layer 301, the conductive circuit (not shown) in the second carrier 300 and the electrical contact layer 400, and emit light according to the external signal. In other embodiments, the conductive material can be solder, anisotropic conductive film (ACF) or anisotropic conductive paste (ACP). The electrical contact layer 301 includes an N-type contact 301_N and P-type contacts 301_P1, 301_P2, and 301_P3. The sizes of the two contacts can be the same or different. Figure 4In the embodiment, the N-type contact 201_N is connected to the N-type contact 301_N, the P-type contact 201_P1 is connected to the P-type contact 301_P1, the P-type contact 201_P2 is connected to the P-type contact 301_P2, and the P-type contact 201_P3 is connected to the P-type contact 301_P3, so that external signals can be transmitted through the N-type contact and the P-type contact respectively to respectively control the light-emitting units 10, 20, and 30. The distance between the P-type contacts 301_P1, 301_P2, and 301_P3 is greater than the distance between the electrodes 10P, 20P, and 30P (on the first carrier 200), for example, the interval d3 between the P-type contact 301_P1 and the P-type contact 301_P2 is greater than the interval d1 between the electrode 10P and the electrode 20P (or the interval d2 between the electrode 10N and the electrode 20N). Therefore, when the light-emitting units 10, 20, 30 are arranged on the first carrier 200 or the second carrier 300 of the same area, more light-emitting units can be placed on the first carrier 200 because the intervals (e.g., d1, d2) on the first carrier 200 are smaller than the intervals (e.g., d3) on the second carrier 300. In other words, the resolution of the display formed by first arranging the light-emitting units 10, 20, 30 on the first carrier 200 and then docking them to the second carrier 300 can be higher than the resolution of the display formed by directly arranging the light-emitting units 10, 20, 30 on the second carrier 300. In addition, the distances between the electrodes of the same type are also substantially the same, for example, the interval d3 between the P-type contact 301_P1 and the P-type contact 301_P2 is substantially equal to the interval between the P-type contact 301_P2 and the P-type contact 301_P3. In another embodiment, the P-type semiconductor layers of the light-emitting units 10, 20, 30 are connected to the same P-type contact to form a common P-type contact structure, and the N-type semiconductor layers of the light-emitting units 10, 20, 30 are connected to different N-type contacts (not shown). Further, two types of contacts are provided on the upper surface (the surface connected to the first carrier 200) and the lower surface (the surface away from the first carrier 200) of the second carrier 300, and the sizes of these contacts can be the same or different. In one embodiment, the electrical contact layers 201, 301 are completely provided on the surface of the second carrier 300 or the first carrier 200 (in other words, the electrical contact layers 201, 301 protrude from the surfaces of the second carrier 300 and the first carrier 200 respectively), but because the electrical contact layers 201, 301 are very thin, after bonding, part of the first carrier 200 and the second carrier 300 will be in direct contact.

[0051] Figure 5 FIG. 1 is a schematic diagram of a manufacturing process of a display unit according to an embodiment of the present invention. Figure 5After the first carrier 200 and the second carrier 300 are connected, the frame 50 is connected to the surface of the first carrier 200, and the protective layer 40 is formed by injecting the material of the protective layer 40 into the space between the frame 50 and the surface of the first carrier 200. The frame 50 surrounds the light-emitting units 10, 20, 30, and the protective layer 40 covers the light-emitting units 10, 20, 30 and is in direct contact with the inner side (the side close to the light-emitting units) of the frame 50. More specifically, the protective layer 40 is filled into the space formed by the frame 50 and the first carrier 200, and the uppermost surface of the protective layer 40 is roughly coplanar with the uppermost surface of the frame 50. The above-mentioned manufacturing process can further include a polishing manufacturing process to remove the more protruding part of the protective layer 40 or the frame 50, so that the uppermost surface of the protective layer 40 is flush with the uppermost surface of the frame 50. In another embodiment, the protective layer 40 covers the entire display unit, that is, the protective layer 40 covers the entire surface of the first carrier 200, and the protective layer 40 contacts the inner side and the outer side of the frame 50 at the same time, and the protective layer 40 also covers the uppermost surface of the frame 50, and all the light-emitting units on the entire display unit are covered by the same protective layer 40. In another embodiment, a protective layer 40 only covers a portion of the surface of the first carrier 200, and contacts the inner side and the outer side of the frame 50 at the same time, and the uppermost surface of the protective layer 40 is substantially coplanar with the uppermost surface of the frame 50.

[0052] Fig. 6A It is a bottom view of a light emitting diode display according to an embodiment of the present invention. Figure 6B for Fig. 6A Schematic cross-sectional view of the BB' line segment of the LED display in FIG. The LED display 20000 includes four display units 3000A, 3000B, 3000C, 3000D and a control circuit 500. The control circuit 500 is placed approximately at the center of the LED display 20000 and is electrically connected to the display units through electrical contact layers 400A, 400B, 400C, 400D, and provides control signals to the display units 3000A, 3000B, 3000C, 3000D to generate images. The control circuit 500 includes active electronic components such as a switch unit and a control IC (Integrated Chip), as well as passive electronic components such as a resistor and a capacitor. Figure 6B for Fig. 6A FIG. 2 is a schematic cross-sectional view of the light emitting diode display 20000 along line segment BB′. The display units 3000A, 3000B, 3000C, and 3000D are similar to the display unit 1000, and the related descriptions can refer to the aforementioned paragraphs. Figure 6BThe control circuit 500 is connected to the lower surface of the electrical contact layer 400A and exposes a portion of the lower surface of the electrical contact layer 400A. The control circuit 500 overlaps with the pixel unit on the display unit 3000A and at least a portion thereof extends beyond the pixel unit.

[0053] Figure 7 FIG. 1 is a cross-sectional schematic diagram of a display unit in an embodiment of the present invention. Figure 7 The display unit 4000 includes an electrical contact layer 400, a second carrier 300, a third carrier 200A, a fourth carrier 200B, a first pixel unit 101 and a second pixel unit 102. The area of ​​the lower surface of each of the carriers 200A and 200B is smaller than the area of ​​the upper surface of the second carrier 300. The structures of the first pixel unit 101 and the second pixel unit 102 are similar to those of the pixel unit 100, and the relevant description can refer to the aforementioned paragraph. The protective layer 40 covers the light-emitting units 10, 20, and 30 and is in direct contact with the inner side of the frame 50 (the side close to the light-emitting unit), and the uppermost surface of the protective layer 40 is roughly coplanar with the uppermost surface of the frame 50. More specifically, the protective layer 40 is disposed in the space formed by the frame 50 and the carriers 200A and 200B. In another embodiment, the protective layer 40 covers the entire display unit, that is, the protective layer 40 covers the entire upper surface of the second carrier 300, and the protective layer 40 contacts the inner side and the outer side of the frame 50 at the same time, and the protective layer 40 also covers the uppermost surface of the frame 50. In one embodiment, the same protective layer 40 covers the entire at least two light-emitting units, contacts the inner side and the outer side of the frame 50 at the same time, and further exposes a portion of the upper surface of the second carrier 300.

[0054] In the display unit 4000, each pixel unit 101, 102 is connected to the carrier 200A, 200B through the conductive layer 60 in the pixel unit, so that the external signal controls different pixel units through different carriers. More specifically, after passing through the electrical contact layer 400 and the second carrier 300, the external signal controls the pixel unit 101 through the third carrier 200A, and controls the pixel unit 102 through the fourth carrier 200B. In the display unit 1000, all pixel units are arranged on the first carrier 200, that is, the signal and control circuit for controlling each pixel unit pass through the first carrier 200 at the same time. The control signal of each pixel unit in the display unit 4000 is transmitted through different carriers (that is, there is only a single pixel unit on a single carrier), so that the control circuits in the carriers 200A, 200B are simpler than the carrier 200 in the display unit 1000, and the spacing between the circuits can be designed to be larger, so that it is not easy to cause the problem of mutual interference between signals. In one embodiment, after the pixel unit is bonded to the carrier below, it can be tested, such as electrical and optical properties. After confirming that the pixel unit is operating normally, the carrier (such as carriers 200A, 200B) and the pixel unit are bonded to another carrier (such as carrier 300). When a single pixel unit is abnormal, the display unit 4000 can easily replace the pixel unit, for example, the pixel unit 101 together with the third carrier 200A below is removed and replaced with a normal pixel unit and a flexible board. Compared with the case where an abnormality is found in a pixel unit in the display unit 1000, if a single pixel unit cannot be replaced, the pixel units on the entire carrier 200 together with the carrier 200 can only be replaced, which is extremely inconvenient in manufacturing and production. Such manufacturing differences are more obvious when the cause of the abnormality comes from the carrier board connected to the pixel unit. The display unit 4000 can be repaired by replacing only a single carrier board and a single pixel unit above, for example, only replacing the pixel unit 101 and the third carrier board 200A without affecting the normal operation of the pixel unit 102 and the fourth carrier board 200B. In one embodiment, the display unit 4000 includes multiple carrier boards, and each carrier board is provided with at least two pixel units.

[0055] Figure 8 FIG. 1 is a cross-sectional schematic diagram of a display unit in an embodiment of the present invention. Figure 8, the display unit 5000 includes an electrical contact layer 400, a fifth carrier board 300A, a sixth carrier board 200C, and a pixel unit 100. The lower surface of the sixth carrier board 200C is provided with an electrical contact layer 201, and the upper surface of the fifth carrier board 300A includes two recesses 3001 and 3002, and the electrical contact layer 301 is provided in the recesses 3001 and 3002. The electrical contact layer 301 can be connected to the electrical contact layer 201 through a conductive material such as solder, so that an external signal can be input through the electrical contact layer 400, the fifth carrier board 300A and the sixth carrier board 200C and used to control the pixel unit 100. Among them, the electrical contact layer 301 and the electrical contact layer 201 can also include N-type contacts and P-type contacts to respectively connect and control the light-emitting units 10, 20, and 30. For relevant details and implementation methods, please refer to the aforementioned paragraphs and Figure 3A , Figure 4 and Figure 5, which will not be described in detail here. In other embodiments, the conductive material may be a solder, an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP). The protective layer 40 covers the light-emitting units 10, 20, 30 and is in direct contact with the inner side of the frame 50 (the side close to the light-emitting unit). More specifically, the protective layer 40 fills the space formed by the frame 50 and the sixth carrier 200C, and the uppermost surface of the protective layer 40 is roughly coplanar with the uppermost surface of the frame 50. In another embodiment, the protective layer 40 covers the entire display unit, that is, the protective layer 40 covers the entire surface of the sixth carrier 200C, and the protective layer 40 contacts the inner and outer sides of the frame 50 at the same time. Furthermore, all the light-emitting units in the display unit 5000 are covered by the same protective layer 40, and the protective layer 40 also covers the uppermost surface of the frame 50. In another embodiment, the display unit 5000 includes at least two protective layers 40 that are not in contact with each other, and one of the protective layers 40 contacts the inner side and the outer side of the frame 50 at the same time, and the uppermost surface of the protective layer 40 is flush with the uppermost surface of the frame 50. After the fifth carrier 300A and the sixth carrier 200C are connected, the electrical contact layer 201 completely enters the recesses 3001 and 3002, and the lower surface of the sixth carrier 200C is in direct contact with the upper surface of the fifth carrier 300A. In one embodiment, the gap between the sixth carrier 200C and the fifth carrier 300A (including the recesses 3001 and 3002) is further filled with insulating materials such as silicone and epoxy to strengthen the adhesion between the two, and further strengthen the bonding strength between the electrical contact layers 201 and 301. Furthermore, the joining of the sixth carrier 200C and the fifth carrier 300A may cause the sixth carrier 200C to deform so that a bulge appears on the upper surface of the sixth carrier 200C. The design of the recess can reduce the degree of the bulge, that is, reduce the amplitude of the deformation or even avoid the deformation.

[0056] The embodiments described above are only for illustrating the technical ideas and features of the present invention, and their purpose is to enable people familiar with the technology to understand the contents of the present invention and implement them accordingly. They cannot be used to limit the patent scope of the present invention. That is, any equivalent changes or modifications made according to the spirit disclosed by the present invention should still be covered by the patent scope of the present invention.

Claims

1. A display, characterized in that: The display contains: A first carrier plate including a first electrode and a second electrode; A second carrier board is formed under the first carrier board and includes a first contact point and a second contact point located on a side close to the first carrier board; A light-emitting unit is formed on the first substrate and directly contacts the first electrode, wherein the light-emitting unit comprises an N-type semiconductor layer, a P-type semiconductor layer, an active layer located between the N-type semiconductor layer and the P-type semiconductor layer, a first electrode layer facing the first substrate and electrically connected to the first electrode, and a second electrode layer facing the first substrate and electrically connected to the second electrode; a frame surrounding the light-emitting unit; and A protective layer covering the light emitting unit, The interval between the first electrode and the second electrode is smaller than the interval between the first contact and the second contact. The first carrier plate includes polyester (Polyester), polyimide (Polyimide, PI), BT resin (Bismaleimide Triazine), PTFE resin (Polytetrafluoroethylene) or a combination thereof. The display as claimed in claim 1 , wherein the frame comprises an opaque material. 3 . The display as claimed in claim 1 , further comprising a conductive layer located between the light emitting unit and the first carrier. 4 . The display as claimed in claim 1 , further comprising an electrical contact layer disposed on another side of the second carrier relative to the first carrier. 5 . The display as claimed in claim 1 , further comprising a first electrical contact layer located below the first carrier, and a second electrical contact layer located above the second carrier and electrically connected to the first electrical contact layer. The display as claimed in claim 1 , wherein the first electrode is electrically connected to the first contact. The display as claimed in claim 1 , wherein the uppermost surface of the frame is flush with the uppermost surface of the protection layer. The display as claimed in claim 1 , wherein the second carrier further comprises a cavity.

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