Semiconductor package using buried bridged through silicon via interconnects
By using resin molded package substrates and embedded bridge silicon through-hole inner connecting parts in 2.5D semiconductor packages, the problems of low density and interconnection length in the prior art are solved, and efficient signal transmission and low signal transmission are achieved Power consumption package structure.
Patent Information
- Application Number
- CN202010661926.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2016-10-06
- Filing Date
- 2017-02-15
- Publication Date
- 2024-12-10
- Estimated Expiration
- 2037-02-15
AI Technical Summary
The existing 2.5D semiconductor packaging technology has problems such as low density, long interconnection length, and large resistance and capacitance load in the chip connection between the silicon through holes, resulting in insufficient performance and high power consumption.
The inner connecting member of the silicon through-hole through-hole of resin molded packaged substrate and embedded bridge bridge is formed by resin molding core and metal plugs, and the front and rear focus distribution layer structure is embedded, and the inner connecting member of the silicon through-hole is embedded, and placed on it. Semiconductor chips use solder balls and metal plugs for electrical connection, reducing interposer layers, improving density and signal transmission efficiency.
Achieve higher density interconnects, reduce resistance and power consumption, improve performance and signal integrity, reduce the shape factor of the package, and improve the overall performance of the package.
Smart Images
Figure CN111769093B_ABST