Light Emitting Diode Package

Abstract

The present invention discloses a light-emitting diode (LED) package, including an LED chip, a reflective layer, an absorption layer and a wavelength conversion layer. The reflective layer surrounds the chip, the wavelength conversion layer is arranged on the chip, and the absorption layer is arranged outside or on the reflective layer. When the absorption layer is arranged on the reflective layer, the wavelength conversion layer is arranged on the absorption layer and the LED chip, and when the absorption layer is arranged outside the reflective layer, the wavelength conversion layer is arranged on the reflective layer, the absorption layer and the LED chip. The light-emitting diode package of the present invention has both a reflective layer and an absorption layer. Since the contact area between the absorption layer and the LED chip is very small or not in contact, it is less likely to absorb the light emitted by the LED chip itself, and the reflective layer can also increase the luminous brightness. The light-emitting diode package of the present invention has good luminous efficiency. In addition, when the light-emitting diode package is used as a light source of a sensing device, the absorption layer can also absorb secondary light with a time difference emitted by the light-emitting diode package to reduce the interference caused to the sensing element, thereby improving the accuracy of the sensing element.

Description

Technical Field

[0001] The invention relates to a light emitting diode package, in particular to a light emitting diode package having both a reflective layer and an absorption layer, having good light emitting efficiency and capable of reducing secondary light emitted by the light emitting diode package. Background Art

[0002] LED is a light-emitting element made of semiconductor. The main principle of light emission is that electrons and holes in the semiconductor recombine to emit photons. Currently, the application of LED in infrared sensing is an emerging market trend. Surface-mounted LED has advantages such as light weight and small size, so it is suitable for small-sized sensing devices.

[0003] However, compared to small-sized sensing devices, such as those installed in smart phones, the overall package size of surface mount LEDs is still too large, so their application in small-sized sensing devices is still limited. In addition, if the surface mount LED is coated with an absorbent material, although it can help reduce the stray light in the sensing environment, it reduces the brightness of the surface mount LED itself, which can easily cause the problem that the sensing element has difficulty sensing the position of the object to be measured. Summary of the invention

[0004] In view of various problems in the prior art, this case proposes a novel light emitting diode package as an implementation method and basis for improving the above-mentioned shortcomings.

[0005] The present invention provides a light-emitting diode package, which includes at least one LED chip, a reflective layer, an absorption layer and a wavelength conversion layer. The reflective layer surrounds the chip; the wavelength conversion layer is arranged on the chip; the absorption layer is arranged outside or on the reflective layer. When the absorption layer is arranged on the reflective layer, the wavelength conversion layer is arranged on the absorption layer and the LED chip; when the absorption layer is arranged outside the reflective layer, the wavelength conversion layer is arranged on the reflective layer, the absorption layer and the LED chip.

[0006] Another light-emitting diode package of the present invention provides a light-emitting diode package, which at least includes: an LED chip, a reflective layer, an absorption layer and a wavelength conversion layer. The reflective layer includes an inner surface and a bottom surface, and the inner surface and the bottom surface are perpendicular to each other or have an angle; the wavelength conversion layer is arranged on the chip or surrounds the chip, when the wavelength conversion layer surrounds the chip, a space is formed between the reflective layer and the LED chip, and when the wavelength conversion layer is arranged on the chip, the reflective layer surrounds the chip and the wavelength conversion layer; the absorption layer surrounds the reflective layer.

[0007] The light-emitting diode package of the present invention has both a reflective layer and an absorption layer. When the light-emitting diode package is used as a light source for a sensing device, the absorption layer can absorb the light that returns to the wavelength conversion layer due to total internal reflection, reflection or scattering. It can also absorb ambient light, which can prevent the light-emitting diode package from directly or indirectly generating multiple light beams with time differences. Since the multiple light beams are emitted to the object to be measured at different times, the object to be measured also generates multiple light beams with time differences that are incident on the sensing element, thereby generating sensing errors. It can also reduce the interference of ambient light on the sensing element, thereby improving the accuracy of the sensing element. In addition, the absorption layer has very little contact area with the LED chip or no contact, and is less likely to absorb the light emitted by the LED chip itself and affect the luminous brightness. In addition, the reflective layer can also increase the luminous brightness. Accordingly, the light-emitting diode package of the present invention has good luminous efficiency, and will not generate the problem that the sensing element cannot sense the position of the object to be measured due to too low luminous brightness.

[0008] In order to have a further understanding and recognition of the technical features and effects achieved by the present invention, preferred embodiments and accompanying detailed descriptions are now attached. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1A is a cross-sectional side view schematic diagram of a first embodiment of a light emitting diode package of the present invention;

[0010] Figure 1B A schematic top view of a first embodiment of a light emitting diode package of the present invention;

[0011] Figure 2 A schematic diagram of a light path of a first embodiment of a light emitting diode package of the present invention;

[0012] Figure 3 A schematic flow chart of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0013] Figure 4A A schematic diagram of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0014] Figure 4B A schematic diagram of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0015] Figure 4C A schematic diagram of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0016] Figure 4D A schematic diagram of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0017] Figure 4EA schematic diagram of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0018] Figure 4F A schematic diagram of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0019] Figure 4G A schematic diagram of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0020] Figure 4H A schematic diagram of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0021] Fig. 4I A schematic diagram of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0022] Figure 4J A schematic diagram of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0023] Figure 4K A schematic diagram of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0024] Figure 4L A schematic diagram of the steps of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention;

[0025] Figure 5 is a cross-sectional side view schematic diagram of a second embodiment of a light emitting diode package of the present invention;

[0026] Figure 6 is a cross-sectional side view schematic diagram of a third embodiment of a light emitting diode package of the present invention;

[0027] Figure 7 is a cross-sectional side view of a fourth embodiment of a light emitting diode package according to the present invention;

[0028] Fig. 8A is a cross-sectional side view of a fifth embodiment of a light emitting diode package according to the present invention;

[0029] Figure 8B is a top view schematically showing a fifth embodiment of a light emitting diode package according to the present invention;

[0030] Fig. 9 A schematic diagram of a light path of a fifth embodiment of a light emitting diode package of the present invention;

[0031] Fig.10 is a cross-sectional side view of a sixth embodiment of a light emitting diode package according to the present invention;

[0032] Fig.11is a cross-sectional side view of a seventh embodiment of a light emitting diode package according to the present invention;

[0033] Fig.12 is a cross-sectional side view of an eighth embodiment of a light emitting diode package according to the present invention;

[0034] Fig.13A is a cross-sectional side view of a ninth embodiment of a light emitting diode package according to the present invention;

[0035] Fig. 13B is a schematic top view of a ninth embodiment of a light emitting diode package according to the present invention;

[0036] Fig.14 A schematic diagram of a light path of a ninth embodiment of a light emitting diode package according to the present invention;

[0037] Fig.15 is a cross-sectional side view of a tenth embodiment of a light emitting diode package according to the present invention;

[0038] Fig.16 is a cross-sectional side view of an eleventh embodiment of a light emitting diode package according to the present invention;

[0039] Fig.17 is a cross-sectional side view of a twelfth embodiment of a light emitting diode package according to the present invention;

[0040] Fig.18A is a cross-sectional side view of a thirteenth embodiment of a light emitting diode package according to the present invention;

[0041] Fig.18B is a schematic top view of a thirteenth embodiment of a light emitting diode package according to the present invention;

[0042] Fig.19 A schematic diagram of a light path of a thirteenth embodiment of a light emitting diode package according to the present invention;

[0043] Fig. 20 is a cross-sectional side view of a fourteenth embodiment of a light emitting diode package according to the present invention;

[0044] Fig.21 is a cross-sectional side view of a fifteenth embodiment of a light emitting diode package according to the present invention;

[0045] Fig. 22 is a cross-sectional side view of a sixteenth embodiment of a light emitting diode package according to the present invention;

[0046] Fig.23A is a cross-sectional side view of a seventeenth embodiment of a light emitting diode package according to the present invention;

[0047] Fig. 23Bis a schematic top view of a seventeenth embodiment of a light emitting diode package according to the present invention;

[0048] Fig.24 A schematic diagram of a light path of a seventeenth embodiment of a light emitting diode package according to the present invention;

[0049] Fig.25 is a cross-sectional side view of an eighteenth embodiment of a light emitting diode package according to the present invention;

[0050] Fig.26 is a cross-sectional side view of a nineteenth embodiment of a light emitting diode package according to the present invention;

[0051] Fig. 27 is a cross-sectional side view of a twentieth embodiment of a light emitting diode package according to the present invention; and

[0052] Fig.28 It is a schematic diagram of applying the light emitting diode package of the present invention to a sensing device.

[0053] Explanation of symbols

[0054] 1 LED chip 41 bottom surface

[0055] 2 Reflection layer 42 particles

[0056] 3 Absorption layer 43 top surface

[0057] 4 Wavelength conversion layer 45 Wavelength conversion layer

[0058] 5 LED chips 50 LED chips

[0059] 6 Reflection layer 51 top surface

[0060] 7 Absorption layer 60 Reflection layer

[0061] 8 wavelength conversion layer 70 absorption layer

[0062] 9 Sensing device 80 Wavelength conversion layer

[0063] 10 LED chips 81 particles

[0064] 11 Top 82 Top

[0065] 15 LED Chips 100 Steps

[0066] 20 LED chips 200 steps

[0067] 25 LED chip 251 inner surface

[0068] 30 LED chip 252 bottom

[0069] 31 Top 253 Top

[0070] 35 Absorption layer 300 Step

[0071] 40 wavelength conversion layer 351 top surface

[0072] 400 steps 1200 steps

[0073] 401 top surface 4011 surface microstructure

[0074] 402 Particle 4511 Surface microstructure

[0075] 431 Surface microstructure L3 Ambient light

[0076] 451 Top S Space

[0077] 452 Particle W Sensing Element

[0078] 500 Steps X Angle

[0079] 600 Step Y Angle

[0080] 601 Inner surface A1~A2 Horizontal width

[0081] 602 Bottom B1~B4 Horizontal width

[0082] 603 Top surface C1~C4 vertical height

[0083] 700 Steps D1 to D4 Horizontal Width

[0084] 701 Top surface E1~E4 Horizontal width

[0085] 800 Step Z Object to be tested

[0086] 801 Top surface I1~I20 LED package

[0087] 802 Granules T Temporary Carrier

[0088] 821 Surface Microstructure G1 First Colloid

[0089] 900 Step G2 Second colloid

[0090] 1000 Step G3 The third colloid

[0091] 1100 Step G4 Groove

[0092] L1 The horizontal width of the first light F1 to F4

[0093] L2 Second ray DETAILED DESCRIPTION

[0094] Embodiments of the light emitting diode package of the present invention will be described below with reference to the relevant drawings. For ease of understanding, the same elements in the following embodiments are marked with the same symbols.

[0095] First, see Figure 1A and Figure 1B , which respectively illustrate a cross-sectional side view and a top view of a first embodiment of a light emitting diode package of the present invention. The light emitting diode package I1 comprises an LED chip 1, a reflective layer 2, an absorption layer 3 and a wavelength conversion layer 4.

[0096] Please read first Figure 1A The schematic cross-sectional side view of the light emitting diode package shown. The reflective layer 2 and the absorption layer 3 of the light emitting diode package I1 surround the chip 1, and the absorption layer 3 is disposed on the reflective layer 2. The lateral width A1 of the absorption layer 3 is the same as or similar to the lateral width B1 of the reflection layer 2. The ratio of the longitudinal height C1 of the absorption layer 3 to the longitudinal height D1 of the reflection layer 2 is preferably between 1:3 and 1:10, and most preferably between 1:6 and 1:7. The top surface 31 of the absorption layer 3 is substantially flush with the top surface 11 of the LED chip 1 within the range allowed by the manufacturing process. The wavelength conversion layer 4 is disposed on the absorption layer 3 and the LED chip 1, so that the top surface 31 of the absorption layer 3 is in contact with the bottom surface 41 of the wavelength conversion layer 4. The lateral width E1 of the wavelength conversion layer 4 is equal to or similar to the lateral width F1 of the LED chip 1 plus twice the lateral width A1 of the absorption layer 3. The material of the absorption layer 3 is, for example, graphite powder, flake graphite powder, artificial graphite powder, expanded graphite powder, worm-like graphite powder, earthy graphite powder or graphite compound, etc. However, the material of the absorption layer 3 is only for example and not for limitation. The material of the reflection layer 2 is, for example, silver, titanium oxide, zirconium oxide, niobium oxide, aluminum oxide, silicon oxide, magnesium fluoride, aluminum nitride, etc. The material of the reflection layer 2 is, for example, silicone rubber with titanium dioxide added, etc. However, the material of the reflection layer 2 is only for example and not for limitation. In addition, if the reflection layer 2 is conductive, an insulating structure (not shown) will be provided between the reflection layer 2 and the LED chip 1. The material of the wavelength conversion layer 4 is, for example, a rubber compound with added fluorescent powder or nanoparticles (QuantumDot), fluorescent powder or nanoparticle film, etc. The color light that can be generated by the fluorescent powder or nanoparticles is, for example, yellow-green light, red light, blue light, infrared light or ultraviolet light. However, the material of the wavelength conversion layer is only for example and not for limitation.

[0097] Figure 1B The figure shows a schematic top view of a light emitting diode package. As shown in the figure, the reflective layer 2 (not shown) and the absorption layer 3 of the light emitting diode package I1 surround the LED chip 1.

[0098] Please refer to Figure 2A schematic diagram of the light path of the first embodiment of the light emitting diode package I1 is shown. As shown in the figure, the first light L1 emitted from the LED chip 1 will be reflected by the reflective layer 2 to the wavelength conversion layer 4, and absorbed by the wavelength conversion layer 4 to generate the second light L2, and the second light L2 will then be emitted in a direction away from the wavelength conversion layer 4. The first light L1 that is not absorbed by the wavelength conversion layer 4 and still traveling in the wavelength conversion layer 4 (including the first light L1 that has not left the wavelength conversion layer 4 and / or the first light L1 that has left but re-entered the wavelength conversion layer 4, not shown in the figure) can be absorbed by the absorption layer 3; and the second light L2 that is generated after the wavelength conversion layer 4 is excited and still traveling in the wavelength conversion layer 4 (including the second light L2 that has not left the wavelength conversion layer 4 and / or the second light L2 that has left but re-entered the wavelength conversion layer 4, not shown in the figure) can also be absorbed by the absorption layer 3. The ambient light L3 incident on the light emitting diode package I1 (including the ambient light L3 directly incident on the absorption layer 3 and / or the ambient light L3 incident on the wavelength conversion layer 4 and / or the ambient light L3 incident on the LED chip 1, not shown) can also be absorbed by the absorption layer 3. The first light L1 is, for example, red light, green light or blue light, however, the aforementioned red light, green light or blue light is only an example and not a limitation. The second light L2 is, for example, infrared light, red light, green light, blue light or light with a longer wavelength than the first light L1, however, the aforementioned infrared light, red light, green light, blue light or light with a longer wavelength than the first light L1 is only an example and not a limitation.

[0099] Figure 3 The figure is a schematic flow chart showing the steps of a manufacturing method of a first embodiment of a light emitting diode package of the present invention. Figure 4A to Figure 4L The present invention is a schematic diagram of the steps of a method for manufacturing a light emitting diode package according to an embodiment of the present invention. The method for manufacturing a light emitting diode package according to the present invention comprises the following steps:

[0100] Step 100: Perform placement operation to place multiple LED chips 1 on a temporary carrier T at intervals. The temporary carrier T is made of glass or gallium nitride, for example. Step 100 corresponds to Figure 4A .

[0101] Step 200: Perform a first glue dispensing operation to dispense glue on the temporary carrier T so that the LED chip 1 is covered in a first colloid G1. The first colloid G1 is, for example, silver, titanium oxide, zirconium oxide, niobium oxide, aluminum oxide, silicon oxide, magnesium fluoride, aluminum nitride, etc. The first colloid G1 is, for example, silicone rubber with titanium dioxide added, etc. Step 200 corresponds to Figure 4B .

[0102] Step 300: Perform a first grinding operation to grind the surface of the first colloid G1 for, for example, 5 to 10 minutes, so that the longitudinal thickness of the first colloid G1 is reduced. Step 300 corresponds to Figure 4C .

[0103] Step 400: Perform a first removal operation to remove the first colloid G1 above the plurality of LED chips 1 to expose the top surfaces of the plurality of LED chips 1. Step 400 corresponds to Figure 4D .

[0104] Step 500: Perform a first cutting operation to cut between adjacent LED chips 1, for example, for 20 to 60 minutes to cut a groove G4 between adjacent LED chips 1. Step 500 corresponds to Figure 4E .

[0105] Step 600: Perform a second removal operation to remove the first colloid G1 outside the upper edges of the plurality of LED chips 1, so that the entire surface of the first colloid G1 is flush. Step 600 corresponds to Figure 4F .

[0106] Step 700: Perform a second dispensing operation to dispense the first colloid G1 so that the top of the LED chip 1 is covered in a second colloid G2. The second colloid G2 is, for example, graphite powder, flake graphite powder, artificial graphite powder, expanded graphite powder, worm-like graphite powder, earthy graphite powder or graphite compound, etc. Step 700 corresponds to Figure 4G .

[0107] Step 800: Perform a second grinding operation to grind the surface of the second colloid G2 for, for example, 5 to 10 minutes, so that the longitudinal thickness of the second colloid G2 is reduced. Step 800 corresponds to Figure 4H .

[0108] Step 900: Perform a third removal operation to remove the second colloid G2 on the top of the plurality of LED chips 1, exposing the top surfaces of the plurality of LED chips 1, and the entire surface of the second colloid G2 is flush with the top surfaces of the plurality of LED chips 1. Step 900 corresponds to Fig. 4I .

[0109] Step 1000: Perform a third glue dispensing operation to dispense glue on the plurality of LED chips 1 and the second colloid G2, so that a third colloid G3 is formed on the LED chips and the second colloid G2. The third colloid G3 is, for example, a glue material with added phosphor or nanoparticles, a phosphor or nanoparticle film, etc. The color light generated by the phosphor or nanoparticles is, for example, yellow-green light, red light, blue light, infrared light, or ultraviolet light. Step 1000 corresponds to Figure 4J .

[0110] Step 1100: Perform a second cutting operation, cutting between adjacent LED chips 1, for example, for 20 to 60 minutes, to separate adjacent LED chips 1. Step 1100 corresponds to Figure 4K .

[0111] Step 1200: Perform a fourth removal operation to remove the temporary carrier T and form a light-emitting diode package I1 including an LED chip 1, a reflective layer 2, an absorption layer 3 and a wavelength conversion layer 4. In the light-emitting diode package I1, the reflective layer 2 and the absorption layer 3 surround the LED chip 1, and the absorption layer 3 is disposed on the reflective layer 2. Step 1200 corresponds to Figure 4L .

[0112] Figure 5 The cross-sectional side view schematic diagram of the second embodiment of the light-emitting diode package of the present invention is shown. The light-emitting diode package I2 includes an LED chip 1, a reflective layer 2, an absorption layer 3 and a wavelength conversion layer 4. The relative positions of the LED chip 1, the reflective layer 2, the absorption layer 3 and the wavelength conversion layer 4 of the second embodiment of the light-emitting diode package are the same as those of the first embodiment, and the difference from the first embodiment is that particles 42 are added to the wavelength conversion layer 4 of the second embodiment, and the first light L1 that is not absorbed by the wavelength conversion layer 4 collides with the particles 42 to generate scattering, and then excites the second light L2. Therefore, the particles 42 can increase the probability of the first light L1 exciting the second light L2.

[0113] Figure 6 The schematic cross-sectional side view of the third embodiment of the light-emitting diode package of the present invention is shown. The light-emitting diode package I3 includes an LED chip 1, a reflective layer 2, an absorption layer 3 and a wavelength conversion layer 4. The relative positions of the LED chip 1, the reflective layer 2, the absorption layer 3 and the wavelength conversion layer 4 of the third embodiment of the light-emitting diode package are the same as those of the first embodiment, and the difference from the first embodiment is that the top surface 43 of the wavelength conversion layer 4 of the third embodiment is provided with a surface microstructure 431. The surface microstructure 431 can reduce the total internal reflection (Total Internal Reflection; TIR), thereby increasing the light extraction efficiency of the light-emitting diode package I3. The shape of the surface microstructure 431 is, for example, a three-dimensional cone or a three-dimensional pyramid.

[0114] Figure 7The fourth embodiment of the light emitting diode package of the present invention is a schematic cross-sectional side view of the light emitting diode package. The light emitting diode package I4 includes an LED chip 1, a reflective layer 2, an absorption layer 3 and a wavelength conversion layer 4. The relative positions of the LED chip 1, the reflective layer 2, the absorption layer 3 and the wavelength conversion layer 4 of the fourth embodiment of the light emitting diode package are the same as those of the first embodiment, and the difference from the first embodiment is that the wavelength conversion layer 4 of the fourth embodiment is added with particles 42, and the first light L1 that is not absorbed by the wavelength conversion layer 4 collides with the aforementioned particles 42 and is scattered, and then excites the second light L2. Therefore, the particles 42 can increase the probability of the first light L1 exciting the second light L2. In addition, the top surface 43 of the wavelength conversion layer 4 of the fourth embodiment is provided with a surface microstructure 431, and the aforementioned surface microstructure 431 can reduce total internal reflection, thereby increasing the light extraction efficiency of the light emitting diode package I4.

[0115] See also Fig. 8A and Figure 8B , which respectively illustrate a cross-sectional side view and a top view of a fifth embodiment of the light emitting diode package of the present invention. The light emitting diode package 15 comprises an LED chip 5, a reflective layer 6, an absorption layer 7 and a wavelength conversion layer 8.

[0116] Please read first Fig. 8AThe cross-sectional side view schematic diagram of the light-emitting diode package shown. The reflective layer 6 of the light-emitting diode package 15 surrounds the chip 5, and the absorption layer 7 surrounds the reflective layer 6. The lateral width B2 of the reflective layer 6 is, for example, 50um. The longitudinal height C2 of the absorption layer 7 is the same as or similar to the longitudinal height D2 of the reflective layer 6. The top surface 61 of the reflective layer 6, the top surface 71 of the absorption layer 7 and the top surface 51 of the LED chip 5 are substantially flush within the range allowed by the manufacturing process. The wavelength conversion layer 8 is arranged on the reflective layer 6, the absorption layer 7 and the LED chip 5, and the lateral width E2 of the wavelength conversion layer 8 is equal to or similar to the lateral width F2 of the LED chip 5 plus twice the lateral width B2 of the reflective layer 6 and twice the lateral width A2 of the absorption layer 7. The material of the absorption layer 7 is, for example, graphite powder, flake graphite powder, artificial graphite powder, expanded graphite powder, worm-like graphite powder, earthy graphite powder or graphite compound, etc. However, the material of the aforementioned absorption layer 7 is only for example and not for limitation. The material of the reflective layer 6 is, for example, silver, titanium oxide, zirconium oxide, niobium oxide, aluminum oxide, silicon oxide, magnesium fluoride, aluminum nitride, etc. The material of the reflective layer 6 is, for example, silicone rubber with titanium dioxide added, etc. However, the material of the reflective layer 6 is only for example and not for limitation. In addition, if the reflective layer 6 is conductive, an insulating structure (not shown) will be provided between the reflective layer 6 and the LED chip 5. The material of the wavelength conversion layer 8 is, for example, a rubber with phosphor or nanoparticles added, a phosphor or nanoparticle film, etc. The colored light that can be generated by the phosphor or nanoparticles is, for example, yellow-green light, red light, blue light, infrared light or ultraviolet light. However, the material of the wavelength conversion layer 8 is only for example and not for limitation.

[0117] Figure 8B To illustrate a top view of a light-emitting diode package, as shown in the figure, the reflective layer 6 of the light-emitting diode package I5 surrounds the LED chip 5, and the absorption layer 7 surrounds the reflective layer 6, so that in the direction away from the center of the LED chip 5, there are the LED chip 5, the reflective layer 6 and the absorption layer 7 in sequence.

[0118] Fig. 9The light path schematic diagram of the fifth embodiment of the light emitting diode package is shown in the figure. As shown in the figure, the first light L1 emitted from the LED chip 5 will be reflected by the reflective layer 6 to the wavelength conversion layer 8, and absorbed by the wavelength conversion layer 8 to generate the second light L2, and the second light L2 will then be emitted in a direction away from the wavelength conversion layer 8. The first light L1 that is not absorbed by the wavelength conversion layer 8 and still traveling in the wavelength conversion layer 8 (including the first light L1 that has not left the wavelength conversion layer 8 and / or the first light L1 that has left but re-entered the wavelength conversion layer 8, not shown in the figure) can be absorbed by the absorption layer 7; and the second light L2 that is generated after the wavelength conversion layer 8 is excited and still traveling in the wavelength conversion layer 8 (including the second light L2 that has not left the wavelength conversion layer 8 and / or the second light L2 that has left but re-entered the wavelength conversion layer 8, not shown in the figure) can also be absorbed by the absorption layer 7. In addition, the ambient light L3 incident on the light-emitting diode package I5 (including the ambient light L3 directly incident on the absorption layer 7 and / or the ambient light L3 incident on the wavelength conversion layer 8 and / or the ambient light L3 incident on the LED chip 5, not shown) can also be absorbed by the absorption layer 7. The first light L1 is, for example, red light, green light or blue light, however, the aforementioned red light, green light or blue light is only an example and not a limitation. The second light L2 is, for example, infrared light, red light, green light, blue light or light with a longer wavelength than the first light L1, however, the aforementioned infrared light, red light, green light, blue light or light with a longer wavelength than the first light L1 is only an example and not a limitation.

[0119] Fig.10 The sixth embodiment of the light emitting diode package of the present invention is a schematic cross-sectional side view. The light emitting diode package 16 includes an LED chip 5, a reflective layer 6, an absorption layer 7, and a wavelength conversion layer 8. The relative positions of the LED chip 5, the reflective layer 6, the absorption layer 7, and the wavelength conversion layer 8 of the sixth embodiment of the light emitting diode package are the same as those of the fifth embodiment, and the difference from the fifth embodiment is that particles 81 are added to the wavelength conversion layer 8 of the sixth embodiment. The first light L1 that is not absorbed by the wavelength conversion layer 8 collides with the particles 81 and is scattered, and then the second light L2 is excited. Therefore, the particles 81 can increase the probability of the first light L1 exciting the second light L2.

[0120] Fig.11The seventh embodiment of the light emitting diode package of the present invention is a schematic cross-sectional side view. The light emitting diode package I7 includes an LED chip 5, a reflective layer 6, an absorption layer 7 and a wavelength conversion layer 8. The relative positions of the LED chip 5, the reflective layer 6, the absorption layer 7 and the wavelength conversion layer 8 of the seventh embodiment of the light emitting diode package are the same as those of the fifth embodiment, and the difference from the aforementioned fifth embodiment is that the top surface 82 of the wavelength conversion layer 8 of the seventh embodiment is provided with a surface microstructure 821. The aforementioned surface microstructure 821 can reduce total internal reflection, thereby increasing the light extraction efficiency of the light emitting diode package I7. The shape of the aforementioned surface microstructure 821 is, for example, a three-dimensional cone or a three-dimensional pyramid.

[0121] Fig.12 The eighth embodiment of the light emitting diode package of the present invention is a cross-sectional side view schematic diagram. The light emitting diode package I8 includes an LED chip 5, a reflective layer 6, an absorption layer 7 and a wavelength conversion layer 8. The relative positions of the LED chip 5, the reflective layer 6, the absorption layer 7 and the wavelength conversion layer 8 of the eighth embodiment of the light emitting diode package are the same as those of the fifth embodiment, and the difference from the fifth embodiment is that the wavelength conversion layer 8 of the eighth embodiment is added with particles 81. The first light L1 that is not absorbed by the wavelength conversion layer 8 collides with the aforementioned particles 81 and is scattered, and then excites the second light L2. Therefore, the particles 81 can increase the probability that the first light L1 excites the second light L2. In addition, the top surface 82 of the wavelength conversion layer 8 of the eighth embodiment is provided with a surface microstructure 821. The aforementioned surface microstructure 821 can reduce total internal reflection, thereby increasing the light extraction efficiency of the light emitting diode package I8.

[0122] See also Fig.13A and Fig. 13B , which respectively illustrate a cross-sectional side view and a top view of a ninth embodiment of the light emitting diode package of the present invention. The light emitting diode package 19 comprises an LED chip 10, a reflective layer 20, an absorption layer 30 and a wavelength conversion layer 40.

[0123] Please read first Fig.13AThe cross-sectional side view schematic diagram of the light-emitting diode package shown. The wavelength conversion layer 40 of the light-emitting diode package 19 is on the LED chip 10, and the lateral width E3 of the wavelength conversion layer 40 is equal to or similar to the lateral width F3 of the LED chip 10. The reflective layer 20 surrounds the LED chip 10 and the wavelength conversion layer 40, and the absorption layer 30 surrounds the reflective layer 20. The lateral width B3 of the reflective layer 20 is, for example, 50um. The longitudinal height C3 of the absorption layer 30 is the same as or similar to the longitudinal height D3 of the reflective layer 20. The top surface 301 of the reflective layer 20 and the absorption layer 30 is substantially flush with the top surface 401 of the wavelength conversion layer 40 within the range allowed by the manufacturing process. The material of the absorption layer 30 is, for example, graphite powder, flake graphite powder, artificial graphite powder, expanded graphite powder, worm-like graphite powder, earthy graphite powder or graphite compound, etc. However, the material of the aforementioned absorption layer 30 is only for example and not for limitation. The material of the reflective layer 20 is, for example, silver, titanium oxide, zirconium oxide, niobium oxide, aluminum oxide, silicon oxide, magnesium fluoride, aluminum nitride, etc. The material of the reflective layer 20 is, for example, silicone rubber with titanium dioxide added, etc. However, the material of the reflective layer 20 is only for example and not for limitation. In addition, if the reflective layer 20 is conductive, an insulating structure (not shown) will be provided between the reflective layer 20 and the LED chip 10. The material of the wavelength conversion layer 40 is, for example, a rubber with phosphor or nanoparticles added, a phosphor or nanoparticle film, etc. The colored light that can be generated by the phosphor or nanoparticles is, for example, yellow-green light, red light, blue light, infrared light or ultraviolet light. However, the material of the wavelength conversion layer 40 is only for example and not for limitation.

[0124] Please also refer to Fig. 13B The top view schematic diagram of the light-emitting diode package shown in the figure shows that the reflective layer 20 of the light-emitting diode package I9 surrounds the LED chip 10 (not shown) and the wavelength conversion layer 40, and the absorption layer 30 surrounds the reflective layer 20, so that in the direction away from the center of the LED chip 10, there are the LED chip 10 (not shown) and the wavelength conversion layer 40, the reflective layer 20 and the absorption layer 30 in sequence.

[0125] FIG1 is a schematic diagram of the light path of the ninth embodiment of the light emitting diode package. As shown in the figure, the first light L1 emitted from the LED chip 10 is reflected by the reflective layer 20 to the wavelength conversion layer 40, and stimulates the second light L2, and the second light L2 is then emitted in a direction away from the wavelength conversion layer 40. The ambient light L3 incident on the light emitting diode package is absorbed by the absorption layer 30. The first light L1 is, for example, red light, green light or blue light, however, the aforementioned red light, green light or blue light is only an example and not a limitation. The second light L2 is, for example, infrared light, red light, green light, blue light or light with a longer wavelength than the first light L1, however, the aforementioned infrared light, red light, green light, blue light or light with a longer wavelength than the first light L1 is only an example and not a limitation.

[0126] Fig.15 The tenth embodiment of the light emitting diode package of the present invention is shown in a cross-sectional side view. The light emitting diode package 110 includes an LED chip 10, a reflective layer 20, an absorption layer 30, and a wavelength conversion layer 40. The relative positions of the LED chip 10, the reflective layer 20, the absorption layer 30, and the wavelength conversion layer 40 of the tenth embodiment of the light emitting diode package are the same as those of the ninth embodiment, and the difference from the ninth embodiment is that the wavelength conversion layer 40 of the tenth embodiment is added with particles 402. The first light L1 that has not excited the second light L2 collides with the aforementioned particles 402 and is scattered, and then the second light L2 is excited. Therefore, the particles 402 can increase the probability of the first light L1 exciting the second light L2.

[0127] Fig.16 The eleventh embodiment of the light emitting diode package of the present invention is shown in a cross-sectional side view. The light emitting diode package includes an LED chip 10, a reflective layer 20, an absorption layer 30, and a wavelength conversion layer 40. The relative positions of the LED chip 10, the reflective layer 20, the absorption layer 30, and the wavelength conversion layer 40 of the eleventh embodiment of the light emitting diode package are the same as those of the ninth embodiment, and the difference from the ninth embodiment is that the top surface 401 of the wavelength conversion layer 40 of the eleventh embodiment is provided with a surface microstructure 4011. The surface microstructure 4011 can reduce total internal reflection, thereby increasing the light extraction efficiency of the light emitting diode package 111. The shape of the surface microstructure 4011 is, for example, a three-dimensional cone or a three-dimensional pyramid.

[0128] Please refer to Fig.17 , which is a cross-sectional side view schematic diagram of the twelfth embodiment of the light-emitting diode package of the present invention. The light-emitting diode package I12 includes an LED chip 10, a reflective layer 20, an absorption layer 30 and a wavelength conversion layer 40. The relative positions of the LED chip 10, the reflective layer 20, the absorption layer 30 and the wavelength conversion layer 40 of the twelfth embodiment of the light-emitting diode package are the same as those of the ninth embodiment, and the difference from the ninth embodiment is that the wavelength conversion layer 40 of the twelfth embodiment is added with particles 402, and the first light L1 that is not absorbed by the wavelength conversion layer 40 collides with the aforementioned particles 402 and is scattered, and then stimulates the second light L2. Therefore, the particles 402 can increase the probability of the first light emitting light emitting light emitting light L2. In addition, the top surface 401 of the wavelength conversion layer 40 of the twelfth embodiment is provided with a surface microstructure 4011, and the aforementioned surface microstructure 4011 can reduce total internal reflection, thereby increasing the light extraction efficiency of the light-emitting diode package I12.

[0129] See also Fig.18A and Fig.18B, which respectively illustrate a cross-sectional side view and a top view of a thirteenth embodiment of the light emitting diode package of the present invention. The light emitting diode package 113 includes an LED chip 50, a reflective layer 60, an absorption layer 70 and a wavelength conversion layer 80.

[0130] Please read first Fig.18A The cross-sectional side view schematic diagram of the light-emitting diode package shown. The wavelength conversion layer 80 of the light-emitting diode package I13 is on the LED chip 50, and the lateral width E4 of the wavelength conversion layer 80 decreases from the top to the bottom of the wavelength conversion layer 80. The lateral width F4 of the LED chip 50 also decreases from the top to the bottom of the LED chip 50, and the bottom lateral width E4 of the wavelength conversion layer 80 is equal to or similar to the top lateral width F4 of the LED chip. The reflective layer 60 surrounds the LED chip 50 and the wavelength conversion layer 80, and the inner surface 601 of the reflective layer 60 and the bottom surface 602 of the reflective layer 60 have an angle X, and the size of the angle X is preferably between 60 degrees and 70 degrees, and the absorption layer 70 surrounds the reflective layer 60. The top lateral width B4 of the reflective layer 60 is, for example, 50um. The longitudinal height C4 of the absorption layer 70 is the same as the longitudinal height D4 of the reflective layer. The top surface 603 of the reflective layer 60, the top surface 701 of the absorption layer 70 and the top surface 801 of the wavelength conversion layer 80 are substantially flush within the range allowed by the manufacturing process. The material of the absorption layer 70 is, for example, graphite powder, flake graphite powder, artificial graphite powder, expanded graphite powder, worm-like graphite powder, earthy graphite powder or graphite compound, etc. However, the material of the absorption layer 70 is only for example and not for limitation. The material of the reflective layer 60 is, for example, silver, titanium oxide, zirconium oxide, niobium oxide, aluminum oxide, silicon oxide, magnesium fluoride, aluminum nitride, etc. The material of the reflective layer 60 is, for example, silicone rubber with titanium dioxide added, etc. However, the material of the reflective layer 60 is only for example and not for limitation. In addition, if the reflective layer 60 is conductive, an insulating structure (not shown) will be provided between the reflective layer 60 and the LED chip 50. The material of the wavelength conversion layer 80 is, for example, a rubber with phosphor or nanoparticles added, a phosphor or nanoparticle film, etc. The color light generated by the fluorescent powder or nanoparticles is, for example, yellow-green light, red light, blue light, infrared light or ultraviolet light. However, the material of the wavelength conversion layer 80 is only an example and not a limitation.

[0131] Fig.18B To illustrate a top view of a light-emitting diode package, as shown in the figure, the reflective layer 60 of the light-emitting diode package I13 surrounds the LED chip 50 and the wavelength conversion layer 80, and the absorption layer 70 surrounds the reflective layer 60, so that in the direction away from the center of the LED chip 50, there are the LED chip 50 and the wavelength conversion layer 80, the reflective layer 60 and the absorption layer 70 in sequence.

[0132] See also Fig.19The schematic diagram of the light path of the thirteenth embodiment of the light emitting diode package is shown in the figure. As shown in the figure, the first light L1 emitted from the LED chip 50 will be reflected by the reflective layer 60 to the wavelength conversion layer 80, and stimulate the second light L2, and the second light L2 will be emitted in a direction away from the wavelength conversion layer 80. The ambient light L3 incident on the light emitting diode package I13 will be absorbed by the absorption layer 70. The first light L1 is, for example, red light, green light or blue light, however, the aforementioned red light, green light or blue light is only for example and not for limitation. The second light L2 is, for example, infrared light, red light, green light, blue light or light with a longer wavelength than the first light L1, however, the aforementioned infrared light, red light, green light, blue light or light with a longer wavelength than the first light L1 is only for example and not for limitation.

[0133] Fig. 20 The schematic cross-sectional side view of the fourteenth embodiment of the light emitting diode package of the present invention is shown. The relative positions of the LED chip 50, the reflective layer 60, the absorption layer 70 and the wavelength conversion layer 80 of the fourteenth embodiment of the light emitting diode package are the same as those of the thirteenth embodiment, and the difference from the thirteenth embodiment is that the wavelength conversion layer 80 of the fourteenth embodiment is added with particles 802, and the first light L1 that is not absorbed by the wavelength conversion layer 80 collides with the particles 802 to generate scattering, and then excites the second light L2. Therefore, the particles 802 can increase the probability of the first light L1 exciting the second light L2.

[0134] Fig.21 The schematic cross-sectional side view of the fifteenth embodiment of the light emitting diode package of the present invention is shown. The relative positions of the LED chip 50, the reflective layer 60, the absorption layer 70 and the wavelength conversion layer 80 of the fifteenth embodiment of the light emitting diode package are the same as those of the thirteenth embodiment, and the difference from the thirteenth embodiment is that the top surface 801 of the wavelength conversion layer 80 of the fifteenth embodiment is provided with a surface microstructure 8011, and the surface microstructure 8011 can reduce total internal reflection, thereby increasing the light extraction efficiency of the light emitting diode package 115. The shape of the surface microstructure 8011 is, for example, a three-dimensional cone or a three-dimensional pyramid.

[0135] Fig. 22The figure is a schematic cross-sectional side view of the sixteenth embodiment of the light emitting diode package of the present invention. The relative positions of the LED chip 50, the reflective layer 60, the absorption layer 70 and the wavelength conversion layer 80 of the sixteenth embodiment of the light emitting diode package I16 are the same as those of the thirteenth embodiment, and the difference from the aforementioned thirteenth embodiment is that the wavelength conversion layer 80 of the sixteenth embodiment is added with particles 802, and the first light L1 that is not absorbed by the wavelength conversion layer 80 collides with the aforementioned particles 802 and is scattered, and then stimulates the second light L2. Therefore, the particles 802 can increase the probability of the first light L1 stimulating the second light L2. In addition, the top surface of the wavelength conversion layer of the sixteenth embodiment is provided with a surface microstructure 8011, and the aforementioned surface microstructure 8011 can reduce total internal reflection, thereby increasing the light extraction efficiency of the light emitting diode package I16.

[0136] See also Fig.23A and Fig. 23B , which respectively illustrate a cross-sectional side view and a top view of the seventeenth embodiment of the light emitting diode package of the present invention. The light emitting diode package 117 includes an LED chip 15, a reflective layer 25, an absorption layer 35 and a wavelength conversion layer 45.

[0137] Please read first Fig.23AThe cross-sectional side view of the light-emitting diode package shown in FIG. 1 is a schematic diagram. The wavelength conversion layer 45 of the light-emitting diode package 117 covers the LED chip 15, and the lateral width E5 of the wavelength conversion layer 45 decreases from the top to the bottom of the wavelength conversion layer 45. The lateral width E5 of the wavelength conversion layer 45 is greater than the lateral width F5 of the bottom of the LED chip 15. The reflective layer 25 surrounds the wavelength conversion layer 45, and the inner surface 251 of the reflective layer 25 and the bottom surface 252 of the reflective layer 25 have an angle Y, and the size of the angle Y is preferably between 60 degrees and 70 degrees, for example. A space S is formed between the reflective layer 25 and the LED chip 15, and the absorption layer 35 surrounds the reflective layer 25. The top lateral width B5 of the reflective layer 25 is, for example, 50um. The longitudinal height C5 of the absorption layer is the same as the longitudinal height D5 of the reflective layer. The top surface 253 of the reflective layer 25, the top surface 351 of the absorption layer 35 and the top surface 451 of the wavelength conversion layer 45 are substantially flush within the range allowed by the manufacturing process. The material of the absorption layer 35 is, for example, graphite powder, flake graphite powder, artificial graphite powder, expanded graphite powder, worm-like graphite powder, earthy graphite powder or graphite compound, etc. However, the material of the absorption layer 35 is only for example and not for limitation. The material of the reflection layer is, for example, silver, titanium oxide, zirconium oxide, niobium oxide, aluminum oxide, silicon oxide, magnesium fluoride, aluminum nitride, etc. The material of the reflection layer 20 is, for example, silicone rubber with titanium dioxide added, etc. However, the material of the reflection layer 25 is only for example and not for limitation. The material of the wavelength conversion layer 45 is, for example, a rubber with phosphor or nanoparticles added, a phosphor or nanoparticle film, etc. The color light that can be generated by the phosphor or nanoparticles is, for example, yellow-green light, red light, blue light, infrared light or ultraviolet light. However, the material of the wavelength conversion layer is only for example and not for limitation.

[0138] Please also refer to Fig. 23B The schematic top view of the light-emitting diode package shown in the figure shows that the wavelength conversion layer 45 of the light-emitting diode package I17 covers the LED chip 15, the reflective layer 25 surrounds the wavelength conversion layer 45, and the absorption layer 35 surrounds the reflective layer 25, so that in the direction away from the center of the LED chip 15, there are the LED chip 15, the wavelength conversion layer 45, the reflective layer 25 and the absorption layer 35 in sequence.

[0139] See also Fig.24As shown in the schematic diagram of the light path, the first light L1 emitted from the LED chip 15 is directly reflected by the reflective layer 25 to the wavelength conversion layer 45, and the wavelength conversion layer 45 is excited by the first light L1 to generate the second light L2, and the second light L2 is then emitted in a direction away from the wavelength conversion layer 45. Alternatively, the first light L1 emitted from the LED chip 15 is reflected multiple times in the space S between the reflective layer 25 and the LED chip 15, exciting multiple second light L2, and the multiple second light L2 is then emitted in a direction away from the wavelength conversion layer 45. The ambient light L3 incident on the light emitting diode package I17 is absorbed by the absorption layer 35. The first light L1 is, for example, red light, green light or blue light, however, the aforementioned red light, green light or blue light is only for example and not for limitation. The second light L2 is, for example, infrared light, red light, green light, blue light or light with a longer wavelength than the first light L1, however, the aforementioned infrared light, red light, green light, blue light or light with a longer wavelength than the first light L1 is only for example and not for limitation.

[0140] Fig.25 The figure shows a cross-sectional side view of the eighteenth embodiment of the light emitting diode package of the present invention. The relative positions of the LED chip 15, the reflective layer 25, the absorption layer 35 and the wavelength conversion layer 45 of the eighteenth embodiment of the light emitting diode package are the same as those of the seventeenth embodiment, and the difference from the seventeenth embodiment is that the wavelength conversion layer 45 of the eighteenth embodiment is added with particles 452, and the first light L1 that is not absorbed by the wavelength conversion layer 45 collides with the particles 452 to generate scattering, and then excites the second light L2. Therefore, the particles 452 can increase the probability of the first light L1 exciting the second light L2.

[0141] Fig.26 The figure is a schematic cross-sectional side view of the nineteenth embodiment of the light emitting diode package of the present invention. The relative positions of the LED chip 15, the reflective layer 25, the absorption layer 35 and the wavelength conversion layer 45 of the nineteenth embodiment of the light emitting diode package are the same as those of the seventeenth embodiment, and the difference from the seventeenth embodiment is that the top surface 451 of the wavelength conversion layer 45 of the nineteenth embodiment is provided with a surface microstructure 4511, and the surface microstructure 4511 can reduce total internal reflection, thereby increasing the light extraction efficiency of the light emitting diode package 119. The shape of the surface microstructure 4511 is, for example, a three-dimensional cone or a three-dimensional pyramid.

[0142] Please refer to Fig. 27, which is a cross-sectional side view schematic diagram of the twentieth embodiment of the light-emitting diode package of the present invention. The relative positions of the LED chip 15, the reflective layer 25, the absorption layer 35 and the wavelength conversion layer 45 of the twentieth embodiment of the light-emitting diode package are the same as those of the seventeenth embodiment, and the difference from the aforementioned seventeenth embodiment is that the wavelength conversion layer 45 of the twentieth embodiment is added with particles 452, and the first light L1 that is not absorbed by the wavelength conversion layer 45 collides with the aforementioned particles 452 and is scattered, and then stimulates the second light L2. Therefore, the particles 452 can increase the probability of the first light L1 stimulating the second light L2. In addition, the top surface 451 of the wavelength conversion layer 45 of the twentieth embodiment is provided with a surface microstructure 4511, and the aforementioned surface microstructure 4511 can reduce total internal reflection, thereby increasing the light extraction efficiency of the light-emitting diode package 120.

[0143] It should be specially explained here that in the first to twentieth embodiments mentioned above, the structures of the LED chip are, for example, from bottom to top, a substrate; an n-type semiconductor layer provided on the substrate; a light-emitting layer provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the light-emitting layer; a current diffusion layer provided on the p-type semiconductor layer; a p-type electrode provided on the current diffusion layer; and an n-type electrode provided on the n-type semiconductor layer.

[0144] Please refer to Fig.28 , which is a schematic diagram illustrating the application of the light emitting diode package of the present invention to a sensing device. After the second light L2 emitted by the light emitting diode package is incident on the object to be measured Z, it is reflected by the object to be measured Z to the sensing element W, and accordingly, the sensing element W can detect the property to be measured of the object to be measured Z. The sensing device 9 is, for example, a small-sized sensing device 9 installed in a mobile phone, an optical mouse, and the like.

[0145] In summary, the present invention has at least the following advantages:

[0146] 1. Improved the accuracy of sensing elements:

[0147] The light emitting diode package of the present invention has both a reflective layer and an absorption layer. When the light emitting diode package of the present invention is used as a light source of a sensing device, the absorption layer can absorb light that returns to the wavelength conversion layer due to total internal reflection, reflection or scattering, and it can also absorb ambient light, thereby preventing the light emitting diode package from directly or indirectly generating multiple light beams with time differences. Since the multiple light beams enter the object to be measured at different times, the object to be measured also generates multiple light beams with time differences that then enter the sensing element, thereby generating sensing errors. It can also reduce the interference of ambient light on the sensing element, thereby improving the accuracy of the sensing element.

[0148] 2. Good luminous efficacy, no problem of the sensor element being unable to sense the position of the object to be measured:

[0149] The light-emitting diode package of the present invention has both a reflective layer and an absorption layer, and the contact area between the absorption layer and the LED chip is very small or even non-existent, so it is less likely to absorb the first light emitted by the LED chip itself and affect the luminous brightness. In addition, the reflective layer can also increase the luminous brightness. Therefore, when the light-emitting diode package of the present invention is used as a light source for a sensing device, the light-emitting diode package of the present invention has good luminous efficiency and will not cause the problem that the sensing element cannot sense the position of the object to be measured due to too low luminous brightness.

[0150] 3. Can be effectively applied to small-sized sensing devices:

[0151] The overall size of the light emitting diode package of the present invention is between 0.4 mm to 1.4 mm×0.4 mm to 1.4 mm×0.1 mm to 0.25 mm, and the overall package size is suitable for a small-sized sensing device, so it can be effectively applied to a small-sized sensing device.

[0152] The above description is for illustrative purposes only and is not intended to be limiting. Any equivalent modifications or changes made thereto without departing from the spirit and scope of the present invention shall be included in the appended claims.

Claims

1. A light emitting diode package, characterized in that: At least: LED chips; A reflective layer surrounding the LED chip; A wavelength conversion layer is disposed on the LED chip; as well as The absorption layer is arranged outside or on the reflection layer. When the absorption layer is arranged on the reflection layer, the wavelength conversion layer is completely arranged on the absorption layer and the LED chip. When the absorption layer is arranged outside the reflection layer, the wavelength conversion layer is completely arranged on the reflection layer, the absorption layer and the LED chip. 2 . The light emitting diode package as claimed in claim 1 , wherein the material of the absorption layer is graphite powder, flake graphite powder, artificial graphite powder, expanded graphite powder, worm-like graphite powder, earthy graphite powder or graphite compound. 3 . The light emitting diode package as claimed in claim 1 , wherein when the absorption layer is disposed on the reflection layer, a longitudinal height ratio of the absorption layer to the reflection layer is between 1:3 and 1:

10.

4. The light emitting diode package according to claim 1, wherein: The wavelength conversion layer is provided with a surface microstructure. 5 . The light emitting diode package as claimed in claim 1 , wherein phosphor or nanoparticles are added to the wavelength conversion layer.

6. A light emitting diode package, characterized in that: At least: LED chips; Reflective layer, comprising: Inside; and a bottom surface, the inner surface and the bottom surface being perpendicular to each other or having an angle therebetween; an absorbing layer surrounding the reflecting layer; and The wavelength conversion layer is completely disposed on the LED chip or surrounds the LED chip. When the wavelength conversion layer surrounds the LED chip, a space is formed between the reflective layer and the LED chip, and the absorption layer does not cover the uppermost surface of the reflective layer. When the wavelength conversion layer is completely disposed on the LED chip, the reflective layer surrounds the LED chip and the wavelength conversion layer. 7 . The light emitting diode package as claimed in claim 6 , wherein a material of the absorption layer is graphite powder, flake graphite powder, artificial graphite powder, expanded graphite powder, worm-like graphite powder, earthy graphite powder or a graphite compound. 8 . The light emitting diode package as claimed in claim 6 , wherein the angle is between 60 degrees and 70 degrees.

9. The light emitting diode package according to claim 6, wherein: The wavelength conversion layer is provided with a surface microstructure. 10 . The light emitting diode package as claimed in claim 6 , wherein phosphor or nanoparticles are added to the wavelength conversion layer.

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