Display device

Abstract

A display device is provided, including: a substrate having a light emitting region; a light emitting element layer including a light emitting element in the light emitting region; and a sensing layer on the light emitting element layer and including a sensing electrode, a first refractive layer, and a second refractive layer, the sensing electrode having a first opening superposed with the light emitting region, the first refractive layer directly on the sensing electrode and having a second opening superposed with the light emitting region, the second refractive layer on the light emitting element layer and the first refractive layer, a first optical refractive index of the first refractive layer being smaller than a second optical refractive index of the second refractive layer.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0079643, filed on July 02, 2019, the contents of which are incorporated herein by reference in its entirety. TECHNICAL FIELD

[0002] Disclosed aspects relate to a display device. BACKGROUND

[0003] The display device can include a display panel displaying an image, a window disposed on the display panel, and a functional panel interposed between the display panel and the window to receive a touch input or prevent reflection of external light.

[0004] The display panel can include a light emitting element, light emitted from the light emitting element can be transmitted through the functional panel and the window and emitted in a front surface direction of the display device.

[0005] The above information disclosed in this Background section is only for enhancing the understanding of the background of the invention, and therefore it can contain information that does not constitute prior art. SUMMARY

[0006] Various layers (e.g., insulating layers) configuring the functional panel and the window can have different refractive indices (i.e., optical refractive indices) from each other. Accordingly, some of the light emitted from the light emitting element can be refracted while passing through the layers, and can be extinguished without being emitted to the front surface of the display device.

[0007] Aspects of some embodiments disclosed relate to a display device having improved light output efficiency.

[0008] Aspects of some embodiments disclosed relate to a display device having a simplified manufacturing process.

[0009] According to some embodiments, there is provided a display device, the display device comprising: a substrate having a light emitting area; a light emitting element layer comprising a light emitting element located in the light emitting area; and a sensing layer located on the light emitting element layer and comprising a sensing electrode, a first refractive layer, and a second refractive layer, the sensing electrode having a first opening superposed with the light emitting area, the first refractive layer being directly located on the sensing electrode and having a second opening superposed with the light emitting area, the second refractive layer being located on the light emitting element layer and the first refractive layer, a first optical refractive index of the first refractive layer being smaller than a second optical refractive index of the second refractive layer.

[0010] In some embodiments, the light emitting element layer further comprises a pixel defining layer having a third opening defining the light emitting area, wherein the light emitting element is positioned in the third opening.

[0011] In some embodiments, the light emitting element includes a first electrode, a light emitting layer, and a second electrode sequentially stacked.

[0012] In some embodiments, the second opening is larger in size than the third opening and smaller in size than the first opening.

[0013] In some embodiments, the second optical refractive index of the second refractive layer is greater than the first optical refractive index of the first refractive layer by 0.2 to 0.4.

[0014] In some embodiments, each of the first refractive layer and the second refractive layer includes at least one of an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, and a polyimide resin.

[0015] In some embodiments, the first refractive layer has a first side surface inclined with respect to an upper surface of the light emitting element layer at the second opening, a first inclination angle of the first side surface is in a range of 60 degrees to 85 degrees, and the first inclination angle increases as a difference between the first optical refractive index of the first refractive layer and the second optical refractive index of the second refractive layer increases.

[0016] In some embodiments, the first refractive layer has a thickness of 1 µm to 3 µm, and the thickness decreases as the first inclination angle increases.

[0017] In some embodiments, the second opening has a planar shape different from a planar shape of the first opening.

[0018] In some embodiments, the first opening has a planar shape of a rhombus, and the second opening has a planar shape of a circle.

[0019] In some embodiments, a size of the second opening is set based on a color of light emitted from the light emitting element.

[0020] In some embodiments, the substrate includes a pixel area, each of the pixel area includes a light emitting area.

[0021] In some embodiments, the display device further includes an anti-reflection layer on the sensing layer and including: a light transmission layer including a color filter superposed with the light emitting area; a third refractive layer on the light transmission layer and including a fourth opening superposed with the light emitting area; and a fourth refractive layer on the light transmission layer and the third refractive layer, wherein a third optical refractive index of the third refractive layer is smaller than a fourth optical refractive index of the fourth refractive layer.

[0022] In some embodiments, the light transmission layer further includes a black matrix not superposed with the light emitting area, the color filter covers the black matrix, and the third refractive layer is directly on the color filter.

[0023] In some embodiments, a difference between the fourth optical refractive index of the fourth refractive layer and the third optical refractive index of the third refractive layer is less than or equal to a difference between the second optical refractive index of the second refractive layer and the first optical refractive index of the first refractive layer.

[0024] In some embodiments, the first refractive layer has a first side surface inclined with respect to an upper surface of the light emitting element layer at the second opening, the third refractive layer has a second side surface inclined with respect to the upper surface of the light emitting element layer at the fourth opening, and a second inclination angle of the second side surface is greater than or equal to a first inclination angle of the first side surface.

[0025] In some embodiments, a total thickness of the first refractive layer and the third refractive layer is in a range of 1 μm to 3 μm.

[0026] According to some embodiments, there is provided a display device, the display device including: a substrate having a light emitting area; a light emitting element layer including light emitting elements located in the light emitting area; and an anti-reflection layer located on the light emitting element layer and including a light transmitting layer, a first refractive layer, and a second refractive layer, the light transmitting layer including a color filter superposed with the light emitting area, the first refractive layer located on the light transmitting layer and having an opening superposed with the light emitting area, the second refractive layer located on the light transmitting layer and the first refractive layer, wherein a first optical refractive index of the first refractive layer is smaller than a second optical refractive index of the second refractive layer.

[0027] In some embodiments, the light transmitting layer further includes a black matrix not superposed with the light emitting area, the color filter covers the black matrix, and the first refractive layer is directly located on the color filter.

[0028] In some embodiments, the second optical refractive index of the second refractive layer is greater than the first optical refractive index of the first refractive layer by 0.2 to 0.4.

[0029] In some embodiments, each of the first refractive layer and the second refractive layer includes at least one of an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, and a polyimide resin.

[0030] In some embodiments, the first refractive layer has a first side surface inclined with respect to an upper surface of the light emitting element layer at the opening, a first inclination angle of the first side surface is in a range of 60 degrees to 85 degrees, and the first inclination angle increases as a difference between the first optical refractive index of the first refractive layer and the second optical refractive index of the second refractive layer increases.

[0031] In some embodiments, the first refractive layer has a thickness of 1 μm to 3 μm, and the thickness decreases as the first inclination angle increases.

[0032] The display device according to some disclosed embodiments includes a low-refractive-index planarization layer and a high-refractive-index planarization layer sequentially stacked on sensing electrodes and / or color filters of the sensing layer, thereby improving the light output efficiency of the light-emitting element.

[0033] Furthermore, since the low-refractive-index planarization layer is formed directly on the sensing electrodes and / or color filters of the sensing layer, the manufacturing process of the display device can be simplified. Attached Figure Description

[0034] The above-described and other features will become more apparent from the further detailed description of the disclosed exemplary embodiments with reference to the accompanying drawings.

[0035] Figure 1 This is a perspective view showing a display device according to some of the disclosed example embodiments.

[0036] Figures 2A-2D It is shown Figure 1 A cross-sectional view of an example display device.

[0037] Figure 3 It is shown that it includes Figure 1 A cross-sectional view of an example display panel in a display device.

[0038] Figure 4 It is shown that it includes Figure 1 A plan view of an example of an input sensing layer in a display device.

[0039] Figure 5 and Figure 6 yes Figure 4 A magnified plan view of the first region of the input sensing layer.

[0040] Figure 7 It shows along Figure 5 A cross-sectional view of an example display device taken by lines I-I' and II-II'.

[0041] Figure 8 It is shown that it includes Figure 7 A cross-sectional view of an example of the first pixel region in a display device.

[0042] Figure 9 It is shown in Figure 1 An example diagram of an image displayed on a display device.

[0043] Figures 10A-10E It shows the manufacturing process in stages, including... Figure 8 A cross-sectional view of the input sensing layer in a display device.

[0044] Figure 11 It shows along Figure 5A cross-sectional view of another example of a display device, taken by lines I-I' and II-II'.

[0045] Figure 12 It is shown that it includes Figure 11 A cross-sectional view of an example of the first pixel region in a display device.

[0046] Figure 13 It is shown Figure 1 A cross-sectional view of another example of a display device.

[0047] Figure 14 It is shown that it includes Figure 13 A cross-sectional view of an example of the first pixel region in a display device.

[0048] Figure 15 It shows along Figure 5 A cross-sectional view of another example of a display device, taken by lines I-I' and II-II'. Detailed Implementation

[0049] The disclosure can be modified in various suitable ways and can take various suitable forms, and specific embodiments will be shown in the accompanying drawings and described in detail herein. However, the disclosure is not limited to the embodiments disclosed below, but can be modified and implemented in various suitable forms.

[0050] In the accompanying drawings, some components not directly related to the disclosed features may be omitted for clarity. Furthermore, some components in the drawings may be shown as exaggerated in size or scale. Throughout the drawings, identical or similar components, even those shown in different drawings, will be given the same reference numerals and symbols as much as possible, and repeated descriptions will be omitted.

[0051] Figure 1 This is a perspective view showing a display device according to a disclosed embodiment.

[0052] Reference Figure 1 The display device DD can display the image IM through the display surface DD-IS. The display surface DD-IS can be parallel to the plane defined by the first direction axis corresponding to the first direction DR1 and the second direction axis corresponding to the second direction DR2. The direction perpendicular to the display surface DD-IS (i.e., the thickness direction of the display device DD) is defined as the third direction DR3.

[0053] The front (or upper) surface and rear (or lower) surface of each of the components, layers, or units described below can be distinguished along the third direction DR3. However, the first direction DR1, the second direction DR2, and the third direction DR3 are merely examples, and the first direction DR1, the second direction DR2, and the third direction DR3 can be used interchangeably as relative concepts.

[0054] The display device DD can have a flat display surface. However, the disclosure is not limited thereto, and the display device DD according to the disclosed embodiments can have various suitable types of display surfaces, such as a curved display surface or a stereoscopic display surface, capable of displaying an image. When the display device DD according to the disclosed embodiments has a stereoscopic display surface, as an example, the stereoscopic display surface can include a plurality of display areas facing different directions. The stereoscopic display surface can be implemented as a multi-prism display surface.

[0055] The display device DD can be a flexible display device. For example, the display device DD can be applied to a foldable display device, a bendable display device, and a rollable display device, etc. The disclosure is not limited thereto, and the display device DD can be a rigid display device.

[0056] As an example, Figure 1 The display device DD is illustrated as being applied to a mobile phone terminal. However, the display device DD is not limited thereto. For example, the display device DD can be applied to a large electronic device such as a television, a monitor, or an electronic billboard, or a small electronic device such as a tablet, a navigation device, a game device, or a smart watch, etc. In addition, the display device DD can be applied to a wearable electronic device such as a head-mounted display.

[0057] The display surface DD-IS of the display device DD can include a display area DD-DA displaying an image IM, and a non-display area DD-NDA adjacent to the display area DD-DA. The non-display area DD-NDA is an area in which an image is not displayed. The non-display area DD-NDA can be disposed outside the display area DD-DA.

[0058] Figures 2A-2D is a cross-sectional view illustrating an example of the display device of Figure 1 Figures 2A-2D The display device DD is schematically illustrated, and a stacking relationship of a functional panel and / or functional units configuring the display device DD is illustrated.

[0059] Referring to Figures 2A-2D , the display device DD can include a display panel DP, an input sensing layer ISL (or a sensing layer, an input sensing panel), and window units WP and WL. The display device DD can further include anti-reflection units RPP and RPL.

[0060] At least some components of the display panel DP, the input sensing layer ISL, and the window units WP and WL can be formed through a continuous process, or at least some components can be bonded to each other through an adhesive member. The adhesive member can include a conventional adhesive or a glue. As an example, Figure 2A The adhesive member illustrated in the display device DD can be an optically clear adhesive member OCA.​

[0061] In Figures 2A-2D , the anti-reflection units RPP and RPL and the window units WP and WL are expressed as "layers" in terms of respective components formed through a continuous process with other components. The components of the anti-reflection units RPP and RPL and the window units WP and WL combined with other components are expressed as "panels". The panels can include a base layer providing a base surface, such as a synthetic resin film, a composite film, and a glass substrate, etc., but the "layers" can not include the base layer. In other words, the units represented by the "layers" can be disposed on a base surface provided by other units.

[0062] The anti-reflection units RPP and RPL and the window units WL and WP can be referred to as anti-reflection panels RPP, window panels WP, anti-reflection layers RPL, and / or window layers WL according to the presence or absence of a base layer.

[0063] In an embodiment, as Figure 2A indicated, the display device DD can include a display panel DP, an input sensing layer ISL, an anti-reflection panel RPP, and a window panel WP.

[0064] In an embodiment, the input sensing layer ISL can be directly disposed on the display panel DP. In this specification, the phrase "B is directly disposed on A" means that a separate adhesive layer / adhesive member is not disposed between A and B. B can be formed on a base surface provided by A after A is formed through a continuous process.

[0065] In an embodiment, the input sensing layer ISL can sense a touch or input to a display surface DD-IS (for example, refer to Figure 1 ) of the display device DD by an external medium such as a hand or a pen.

[0066] The display module DM can be defined by including the display panel DP and the input sensing layer ISL disposed on the display panel DP. The optically transparent adhesive member OCA can be disposed between the display module DM and the anti-reflection panel RPP and between the anti-reflection panel RPP and the window panel WP.

[0067] The input sensing layer ISL can be disposed in or on the display panel DP.

[0068] In an embodiment, the display panel DP can be a light-emitting display panel. For example, the display panel DP can be an organic light-emitting display panel or a quantum dot light-emitting display panel.

[0069] The anti-reflection panel RPP reduces the reflectance of external light incident from the upper side of the window panel WP. In an embodiment, the anti-reflection panel RPP can include a phase retarder and a polarizer. The phase retarder can be of a film type or a liquid crystal coating type, and can include a λ / 2 (half wavelength) phase retarder and / or a λ / 4 (quarter wavelength) phase retarder. The polarizer can also be of a film type or a liquid crystal coating type.

[0070] In an embodiment, the anti-reflection panel RPP can include a color filter. The color filter can have a set or predetermined arrangement. The arrangement of the color filter can be determined in consideration of the light emission colors of the pixels included in the display panel DP. The anti-reflection panel RPP can further include a black matrix adjacent to the color filter.

[0071] In an embodiment, the window panel WP can include a base film WP-BS and a light blocking pattern WP-BZ. The base film WP-BS can include a glass substrate and / or a synthetic resin film, etc. The base film WP-BS is not limited to a single layer. The base film WP-BS can include two or more layers of films bonded to each other by an adhesive member.

[0072] The light blocking pattern WP-BZ can be partially overlaid with the base film WP-BS. The light blocking pattern WP-BZ can be disposed on the rear surface of the base film WP-BS to define a bezel area of the display device DD, i.e., a non-display area DD-NDA (e.g., refer to Figure 1 ).

[0073] The window panel WP can further include a functional coating layer disposed on the upper surface of the base film WP-BS. The functional coating layer can include an anti-fingerprint layer, an anti-reflection layer, and a hard coating layer, etc.

[0074] As shown in Figure 2B , the display device DD can include a display panel DP, an input sensing layer ISL, an anti-reflection layer RPL, and a window layer WL. The adhesive member can be omitted from the display device DD, and the input sensing layer ISL, the anti-reflection layer RPL, and the window layer WL can be formed on a base surface provided for the display panel DP in a continuous process. The stacking order of the input sensing layer ISL and the anti-reflection layer RPL can be changed.

[0075] As shown in Figure 2C , the display device DD can not include separate anti-reflection units RPP and RPL. In an embodiment, the display device DD can include a display panel DP, an input sensing layer ISL, and a window panel WP. Here, the input sensing layer ISL can also have an anti-reflection function.

[0076] As shown in Figure 2DAs shown in FIG. 1, the display device DD can not include a separate input sensing layer ISL. In an embodiment, the display device DD can include a display panel DP, an anti-reflection layer RPL, and a window panel WP.

[0077] In Figures 2A-2D , the input sensing layer ISL is shown to be completely overlaid with the display panel DP. However, this is an example, and the input sensing layer ISL can be overlaid only with a part of the display area DD-DA, or can be overlaid only with the non-display area DD-NDA. The input sensing layer ISL can be a touch sensing layer (or a touch sensing panel) that senses a user's touch or a fingerprint sensing layer (or a fingerprint sensing panel) that senses fingerprint information of a user's finger. The pitch of the sensing electrodes and the width of the sensing electrodes described below can vary according to the purpose of the input sensing layer ISL.

[0078] Figure 3 is a cross-sectional view showing an example of a display panel included in a display device of Figure 1 .

[0079] Referring to Figure 3 , the display panel DP can include a display area DP-DA and a non-display area DP-NDA. The display area DP-DA can include a pixel area in which pixels PX are disposed. The non-display area DP-NDA can be provided with a pad (or referred to as a "land" or a "bonding pad") portion in which pads (e.g., a signal pad DP-PD) of a wiring are disposed. The non-display area DP-NDA can be provided with a data driver that provides a data signal to the pixels PX. The data driver can provide the data signal to each of the pixels PX through a data line.

[0080] The display panel DP can include a driving circuit GDC, a signal line SGL, a signal pad DP-PD, and a pixel PX.

[0081] The pixels PX can be disposed in the display area DP-DA. Each of the pixels PX can include a light emitting element and a pixel driving circuit connected to the light emitting element. For example, the light emitting element can be an organic light emitting diode, but is not limited thereto. The driving circuit GDC, the signal line SGL, the signal pad DP-PD, and the pixel driving circuit can be included in a pixel circuit layer PCL described later (e.g., refer to Figure 7 ).

[0082] The driving circuit GDC can include a scan driving circuit. The scan driving circuit can generate a scan signal and sequentially provide or output the scan signal to a scan line GL. The scan driving circuit can also provide another control signal to the driving circuit of the pixel PX.

[0083] The scan driving circuit can include a thin film transistor formed with a driving circuit of the pixel PX through the same process (e.g., a low temperature poly-silicon ("LTPS") process or a low temperature poly-oxide ("LTPO") process).

[0084] The signal lines SGL can include scan lines GL, data lines DL, power lines PL, and control signal lines CSL. Each of the scan lines GL can be connected to a corresponding pixel among the pixels PX, and each of the data lines DL can be connected to a corresponding pixel among the pixels PX. The power lines PL can be connected to the pixels PX. The control signal lines CSL can provide a control signal to the scan driving circuit.

[0085] The signal lines SGL can overlap the display area DP-DA and the non-display area DP-NDA. The signal lines SGL can include a pad portion and a line portion. The line portion can overlap the display area DP-DA and the non-display area DP-NDA. The pad portion can be connected to an end of the line portion. The pad portion can be disposed in the non-display area DP-NDA and can overlap a corresponding signal pad among the signal pads DP-PD. Detailed descriptions thereof will be described later. An area in which the signal pads DP-PD are disposed in the non-display area DP-NDA can be defined as a pad area NDA-PD.

[0086] The line portion connected to the pixel PX can form a majority of the signal lines SGL. The line portion can be connected to a transistor T (e.g., refer to FIG. 1) of the pixel PX. Figure 7 ) The line portion can have a single / multi-layer structure, and the line portion can be a single body or can include two or more portions. The two or more portions can be disposed on different layers and can be connected to each other through a contact hole passing through an insulating layer disposed between the two or more portions.

[0087] The display panel DP can further include a dummy pad IS-DPD disposed in the pad area NDA-PD. Since the dummy pad IS-DPD is formed with the signal lines SGL through the same process, the dummy pad IS-DPD can be disposed on the same layer as the signal lines SGL. The dummy pad IS-DPD can be selectively disposed in the display device DD including the input sensing layer ISL as shown in Figures 2A-2C , and can be omitted in the display device DD including the input sensing layer ISL.

[0088] In Figure 3 , a circuit board PCB electrically connected to the display panel DP is additionally shown. The circuit board PCB can be a flexible circuit board or a rigid circuit board. The circuit board PCB can be directly bonded to the display panel DP or connected to the display panel DP through another circuit board.

[0089] A timing control circuit TC that controls an operation of the display panel DP can be provided on the circuit board PCB. Further, an input sensing circuit IS-C that controls the input sensing layer ISL (or the input sensing unit) can be provided on the circuit board PCB. Each of the timing control circuit TC and the input sensing circuit IS-C can be mounted on the circuit board PCB in the form of an integrated chip. As another example, the timing control circuit TC and the input sensing circuit IS-C can be mounted on the circuit board PCB in the form of separate integrated chips. The circuit board PCB can include a circuit board pad PCB-P electrically connected to the display panel DP. The circuit board PCB can further include a signal line connecting the circuit board pad PCB-P with the timing control circuit TC and / or the input sensing circuit IS-C.

[0090] Figure 4 is a plan view illustrating an example of an input sensing layer included in a display device of Figure 1 . Figure 5 and Figure 6 are enlarged plan views of a first area of the input sensing layer of Figure 4 .

[0091] Referring to Figure 4 , the input sensing layer ISL can include a sensing area SA that senses an input (e.g., a touch and / or a pressure at the time of a touch) of a user and a peripheral area PA that is disposed on at least one side of the sensing area SA.

[0092] The sensing area SA can correspond to a display area DP-DA of the display panel DP and can have an area substantially the same as that of the display area DP-DA or can have an area greater than that of the display area DP-DA. The peripheral area PA can be disposed adjacent to the sensing area SA. Further, the peripheral area PA can correspond to a non-display area DP-NDA of the display panel DP.

[0093] The input sensing layer ISL can include first and second sensing electrodes IE1-1 to IE1-5 and IE2-1 to IE2-4 disposed in the sensing area SA and first and second signal lines SL1-1 to SL1-5 and SL2-1 to SL2-4 disposed in the peripheral area PA.

[0094] The first sensor portions SP1 can be arranged in one first sensing electrode in the second direction DR2, and the second sensor portions SP2 can be arranged in one second sensing electrode in the first direction DR1. Each of the first connection portions CP1 can connect adjacent first sensor portions SP1 to each other, and each of the second connection portions CP2 can connect adjacent second sensor portions SP2 to each other.

[0095] The first sensing electrodes IE1-1 to IE1-5 and the second sensing electrodes IE2-1 to IE2-4 can have a mesh pattern or a mesh structure. The mesh pattern can include mesh lines, which are metal lines forming at least one mesh hole IS_OPR, IS_OPG, or IS_OPB (or mesh opening) (for example, refer to Figure 5 ). The mesh holes IS_OPR, IS_OPG, and IS_OPB can have a planar shape of a rhombus by the mesh lines, but are not limited thereto.

[0096] The first sensing electrodes IE1-1 to IE1-5 and the second sensing electrodes IE2-1 to IE2-4 have a mesh pattern, and thus parasitic capacitance with electrodes of the display panel DP can be reduced.

[0097] Further, as shown in Figure 5 , in the first area A1, the first sensing electrodes IE1-1 to IE1-5 and the second sensing electrodes IE2-1 to IE2-4 can not be overlapped with the light emitting areas PXA-R, PXA-G, and PXA-B. Here, the light emitting areas PXA-R, PXA-G, and PXA-B can be included in each of the pixels PX (or a pixel area in which the pixels PX are disposed). Thus, the first sensing electrodes IE1-1 to IE1-5 and the second sensing electrodes IE2-1 to IE2-4 can be invisible to a user of the display device DD.

[0098] The first sensing electrodes IE1-1 to IE1-5 and the second sensing electrodes IE2-1 to IE2-4 can include aluminum, copper, chromium, nickel, and / or titanium, etc. However, the disclosure is not limited thereto, and the sensing electrodes can be formed of various suitable metals.

[0099] As an example, when the first sensing electrodes IE1-1 to IE1-5 and the second sensing electrodes IE2-1 to IE2-4 are formed of a metal capable of low-temperature processing, even if the input sensing layer ISL is formed in a continuous process after a manufacturing process of the display panel DP, damage to the light emitting element OLED (for example, refer to Figure 7 ) can be prevented or substantially reduced.

[0100] When the first sensing electrodes IE1-1 to IE1-5 and the second sensing electrodes IE2-1 to IE2-4 are directly disposed on the display panel DP in a mesh pattern, flexibility of the display device DD can be improved (for example, increased).

[0101] In Figure 4In the embodiment, the first sensing electrodes IE1-1 to IE1-5 and the second sensing electrodes IE2-1 to IE2-4 include the first sensor portions SP1 and the second sensor portions SP2 in a rhombic shape. However, the disclosure is not limited thereto, and the first sensor portions SP1 and the second sensor portions SP2 can have a polygonal shape. The first sensing electrodes IE1-1 to IE1-5 and the second sensing electrodes IE2-1 to IE2-4 can have a shape (e.g., a bar shape) that does not distinguish between a sensor portion and a connection portion.

[0102] The first signal lines SL1-1 to SL1-5 can be connected to one of the end portions of the first sensing electrodes IE1-1 to IE1-5, respectively. The second signal lines SL2-1 to SL2-4 can be connected to both ends of the second sensing electrodes IE2-1 to IE2-4. However, the disclosure is not limited thereto. For example, the first signal lines SL1-1 to SL1-5 can be connected to both ends of the first sensing electrodes IE1-1 to IE1-5. As another example, the second signal lines SL2-1 to SL2-4 can be connected to only one end of the second sensing electrodes IE2-1 to IE2-4, respectively.

[0103] Since the lengths of the second sensing electrodes IE2-1 to IE2-4 are longer than the lengths of the first sensing electrodes IE1-1 to IE1-5, the voltage drop of the detection signal (or the transmission signal) in the second sensing electrodes IE2-1 to IE2-4 is greater than the voltage drop of the detection signal (or the transmission signal) in the first sensing electrodes IE1-1 to IE1-5, and thus the sensing sensitivity can be reduced. Since the detection signal (or the transmission signal) is transmitted through the second signal lines SL2-1 to SL2-4 connected to both ends of the second sensing electrodes IE2-1 to IE2-4, the voltage drop of the detection signal (or the transmission signal) and the reduction in the sensing sensitivity can be prevented or substantially alleviated.

[0104] The first signal lines SL1-1 to SL1-5 and the second signal lines SL2-1 to SL2-4 can include line portions SL-L and pad portions SL-P. The pad portions SL-P can be arranged in a pad area NDA-PD. The pad portions SL-P can be superposed on the dummy pads IS-DPD shown in FIG. 1B. Figure 3

[0105] The input sensing layer ISL can further include signal pads DP-PD. The signal pads DP-PD can be arranged in a pad area NDA-PD.

[0106] Referring to FIG. 1B, Figure 5 The first sensor portions SP1 can not be superposed on the light emitting areas PXA-R, PXA-G, and PXA-B, and can be superposed on the non-light emitting area NPXA.

[0107] ​The grid lines (e.g., metal lines) of the first sensor section SP1 can define grid holes IS_OPR, IS_OPG, and IS_OPB. The grid holes IS_OPR, IS_OPG, and IS_OPB can correspond one-to-one with the light-emitting regions PXA-R, PXA-G, and PXA-B. The light-emitting regions PXA-R, PXA-G, and PXA-B can be exposed by the grid holes IS_OPR, IS_OPG, and IS_OPB.

[0108] The line width of the grid lines can be smaller than the width of the pixel-defining layer corresponding to the non-emitting region NPXA (i.e., the pixel-defining layer that defines the emitting regions PXA-R, PXA-G, and PXA-B).

[0109] Therefore, the light emitted from the luminescent areas PXA-R, PXA-G, and PXA-B is minimally blocked by the grid lines, and the grid lines can be prevented or substantially prevented from being seen by the user.

[0110] The grid lines can have a three-layer structure of titanium / aluminum / titanium.

[0111] The light-emitting regions PXA-R, PXA-G, and PXA-B can be configured according to the light-emitting element OLED (e.g., reference). Figure 7 The colors of the light produced in the process are divided into multiple groups. Figure 5 In the diagram, the luminescent regions PXA-R, PXA-G, and PXA-B are divided into three groups based on their luminescent color.

[0112] The light-emitting regions PXA-R, PXA-G, and PXA-B can have different areas depending on the color of the light emitted from the organic light-emitting diode (OLED). The area of ​​the light-emitting regions PXA-R, PXA-G, and PXA-B can be determined based on the type of OLED.

[0113] The mesh apertures IS_OPR, IS_OPG, and IS_OPB can be divided into multiple groups with different areas. The mesh apertures IS_OPR, IS_OPG, and IS_OPB can also be divided into three groups based on their corresponding luminescent regions PXA-R, PXA-G, and PXA-B.

[0114] exist Figure 5 In this diagram, the mesh apertures IS_OPR, IS_OPG, and IS_OPB correspond one-to-one with the light-emitting regions PXA-R, PXA-G, and PXA-B, but are not limited to this. For example, each of the mesh apertures IS_OPR, IS_OPG, and IS_OPB can correspond to two or more light-emitting regions PXA-R, PXA-G, and PXA-B.

[0115] exist Figure 5In the embodiment, the areas of the light emission regions PXA-R, PXA-G, and PXA-B are different, however, this is an example, and the embodiments are not limited thereto. For example, the sizes of the light emission regions PXA-R, PXA-G, and PXA-B can be the same, and the sizes of the grid holes IS_OPR, IS_OPG, and IS_OPB can also be the same. The planar shapes of the grid holes IS_OPR, IS_OPG, and IS_OPB are not limited, and can have polygonal shapes other than rhombic shapes. The planar shapes of the grid holes IS_OPR, IS_OPG, and IS_OPB can have polygonal shapes in which the corners thereof are rounded.

[0116] In the embodiment, the first sensor portion SP1 (or the first and second sensing electrodes IE1-1 to IE1-5 and IE2-1 to IE2-4 and the input sensing layer ISL) can further include a first low-refractive flat layer LRF1 (or a low-refractive organic layer, a first refractive layer, and an optical path control structure).

[0117] The first low-refractive flat layer LRF1 can have a relatively small refractive index (or a refractive index for light, an optical refractive index) than a refractive index of a first high-refractive flat layer HRF1 (for example, refer to Figure 7 ) to be described later. The first low-refractive flat layer LRF1 can not be superposed with the light emission regions PXA-R, PXA-G, and PXA-B, but can be superposed with the non-light emission region NPXA. Further, the first low-refractive flat layer LRF1 can be superposed with the grid lines of the first sensor portion SP1, or can cover the grid lines of the first sensor portion SP1.

[0118] Holes ML_OPR, ML_OPG, and ML_OPB (or openings) through the first low-refractive flat layer LRF1 can be formed in the first low-refractive flat layer LRF1. That is, the first low-refractive flat layer LRF1 can include the holes ML_OPR, ML_OPG, and ML_OPB. The holes ML_OPR, ML_OPG, and ML_OPB can correspond one-to-one to the light emission regions PXA-R, PXA-G, and PXA-B (or the grid holes IS_OPR, IS_OPG, and IS_OPB). The light emission regions PXA-R, PXA-G, and PXA-B (or the grid holes IS_OPR, IS_OPG, and IS_OPB) can be exposed through the holes ML_OPR, ML_OPG, and ML_OPB.

[0119] The holes ML_OPR, ML_OPG, and ML_OPB of the first low-refractive flat layer LRF1 can have different areas according to the color of light emitted by the light emitting element OLED. However, the disclosure is not limited thereto, and the sizes of the holes ML_OPR, ML_OPG, and ML_OPB can be the same, and the sizes of the grid holes IS_OPR, IS_OPG, and IS_OPB can also be the same.

[0120] Further, the planar shape of the holes ML_OPR, ML_OPG, ML_OPB is not limited, and can have a polygonal shape other than a rhombic shape. For example, as shown in FIG. 1B, the holes ML_OPR, ML_OPG, and ML_OPB can have a circular shape on a plane. When the holes ML_OPR, ML_OPG, and ML_OPB have a circular shape, light can be emitted uniformly from the entire edge of the holes ML_OPR, ML_OPG, and ML_OPB. Figure 6

[0121] Figure 7 is a cross-sectional view showing an example of a display device taken along a line I-I’ and a line II-II’ of Figure 5

[0122] Referring to FIG. 1A, Figure 7 The display device DD includes a first pixel PX1, a second pixel PX2, and a third pixel PX3. The first pixel PX1, the second pixel PX2, and the third pixel PX3 are substantially the same as or similar to each other. Accordingly, the display device DD will be described with reference to the first pixel PX1 by encompassing the first pixel PX1, the second pixel PX2, and the third pixel PX3.

[0123] The display device DD can include a base layer BL (or a substrate), a buffer layer BFL, a pixel circuit layer PCL, a light emitting element layer LDL, a thin film encapsulation layer TFE, and an input sensing layer ISL.

[0124] The base layer BL can include a synthetic resin layer. The synthetic resin layer can be a polyimide-based resin layer, and a material thereof is not particularly limited. Further, the base layer BL can include a glass substrate, a metal substrate, or an organic / inorganic composite substrate.

[0125] The buffer layer BFL can be disposed on the base layer BL. The buffer layer BFL prevents impurities from diffusing into the transistor T disposed on the base layer BL, and can improve the flatness of the base layer BL. The buffer layer BFL can be disposed as a single layer, or can be disposed as a multi-layer of at least two layers. The buffer layer BFL can be an inorganic insulating film formed of an inorganic material. For example, the buffer layer BFL can be formed of silicon nitride, silicon oxide, and / or silicon oxynitride, etc. When the buffer layer BFL is disposed as a multi-layer, each layer can be formed of the same material, or can be formed of different materials. In some cases, the buffer layer BFL can be omitted.​​

[0126] The pixel circuit layer PCL can include circuit elements and at least one insulating layer. The insulating layer can include at least one inorganic film and at least one organic film. The circuit elements can include a signal line and a pixel driving circuit, etc.

[0127] The semiconductor pattern ODP of the transistor T can be disposed on the buffer layer BFL. The semiconductor pattern ODP can be selected from amorphous silicon, polysilicon, or metal oxide semiconductor.

[0128] The first insulating layer INS1 can be disposed on the semiconductor pattern ODP. The first insulating layer INS1 can be an inorganic insulating film formed of an inorganic material. For example, the first insulating layer INS1 can be formed of silicon nitride, silicon oxide, and / or silicon oxynitride, etc.

[0129] The control electrode GE of the transistor T can be disposed on the first insulating layer INS1. The control electrode GE can be manufactured according to the same photolithography process as the scan line GL. Figure 3

[0130] The second insulating layer INS2 covering the control electrode GE can be disposed on the first insulating layer INS1. The second insulating layer INS2 can be an inorganic insulating film formed of an inorganic material. For example, the second insulating layer INS2 can be formed of silicon nitride, silicon oxide, and / or silicon oxynitride, etc.

[0131] The first transistor electrode DE (or drain electrode) and the second transistor electrode SE (or source electrode) of the transistor T can be disposed on the second insulating layer INS2.

[0132] The first transistor electrode DE and the second transistor electrode SE can be connected to the semiconductor pattern ODP through the first via CH1 and the second via CH2 passing through the first insulating layer INS1 and the second insulating layer INS2, respectively. On the other hand, in another embodiment disclosed, the transistor T can be implemented by being modified to a bottom gate structure.

[0133] The third insulating layer INS3 covering the first transistor electrode DE and the second transistor electrode SE can be disposed on the second insulating layer INS2. The third insulating layer INS3 can provide a flat surface. The third insulating layer INS3 can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, or a polyimide resin.

[0134] The light emitting element layer LDL is disposed on the third insulating layer INS3. The light emitting element layer LDL can include a pixel definition layer PDL and a light emitting element OLED.

[0135] ​The pixel definition layer PDL can include an organic material. The first electrode AE can be disposed on the third insulating layer INS3. The first electrode AE can be connected to the second transistor electrode SE through a third via hole CH3 passing through the third insulating layer INS3. The pixel definition layer PDL can include an opening portion OP, which can define the light emitting areas PXA-R, PXA-G, and PXA-B.

[0136] The opening portion OP of the pixel definition layer PDL can expose at least a portion of the first electrode AE.

[0137] Referring to Figure 3 The described display area DP-DA (e.g., referring to Figure 3 ) can include the light emitting areas PXA-R, PXA-G, and PXA-B and non-light emitting areas NPXA between the light emitting areas PXA-R, PXA-G, and PXA-B. The non-light emitting areas NPXA can surround the light emitting areas PXA-R, PXA-G, and PXA-B. Each of the light emitting areas PXA-R, PXA-G, and PXA-B can correspond to a portion of the first electrode AE exposed by the opening portion OP. The non-light emitting areas NPXA can be defined to correspond to the pixel definition layer PDL.

[0138] The light emitting element OLED can include the first electrode AE connected to the second transistor electrode SE, the light emitting layer EML disposed on the first electrode AE, and the second electrode CE disposed on the light emitting layer EML. For example, the light emitting element OLED can be an organic light emitting diode.

[0139] One of the first electrode AE and the second electrode CE can be an anode electrode, and the other can be a cathode electrode. For example, the first electrode AE can be an anode electrode, and the second electrode CE can be a cathode electrode.

[0140] In an embodiment, the first electrode AE can be a reflective electrode, and the second electrode CE can be a transmissive electrode.

[0141] In each pixel area, the first electrode AE can be disposed on the third insulating layer INS3. The first electrode AE can include a reflective film capable of reflecting light and a transparent conductive film disposed on or under the reflective film. At least one of the transparent conductive film and the reflective film can be connected to the second transistor electrode SE.

[0142] The reflective film can include a material capable of reflecting light. For example, the reflective film can include at least one of aluminum (Al), silver (Ag), chromium (Cr), molybdenum (Mo), platinum (Pt), nickel (Ni), and an alloy thereof.

[0143] The transparent conductive film can include a transparent conductive oxide. For example, the transparent conductive film can include a transparent conductive oxide of at least one of indium tin oxide ("ITO"), indium zinc oxide ("IZO"), aluminum zinc oxide ("AZO"), gallium-doped zinc oxide ("GZO"), zinc tin oxide ("ZTO"), gallium tin oxide ("GTO"), and fluorine-doped tin oxide ("FTO").

[0144] The light emitting layer EML can be disposed on the exposed surface of the first electrode AE. The light emitting layer EML can have a multi-layer thin film structure including a light generating layer ("LGL"). For example, the light emitting layer EML can include a hole injection layer ("HIL") for injecting holes, a hole transport layer ("HTL") having excellent hole transport properties and serving to increase the chance of hole and electron recombination by suppressing the movement of unbound electrons in the light generating layer, a light generating layer serving to emit light through the recombination of injected electrons and holes, a hole blocking layer ("HBL") for suppressing the movement of unbound holes in the light generating layer, an electron transport layer ("ETL") for smoothly transporting electrons to the light generating layer, and an electron injection layer ("EIL") for injecting electrons.

[0145] The color of light generated in the light generating layer can be one of red, green, blue, and white, but the present embodiment is not limited thereto. For example, the color of light generated in the light generating layer of the light emitting layer EML can be one of magenta, cyan, and yellow.

[0146] The hole injection layer, the hole transport layer, the hole blocking layer, the electron transport layer, and the electron injection layer can be common films connected to each other in adjacent pixel regions.

[0147] The second electrode CE can be disposed on the light emitting layer EML. The second electrode CE can be a transreflective film. For example, the second electrode CE can be a thin metal layer having a thickness sufficient to transmit light. The second electrode CE can transmit some of the light generated in the light generating layer and reflect the remaining portion of the light generated in the light generating layer.

[0148] The second electrode CE can include a material having a lower work function than the work function of the transparent conductive film. For example, the second electrode CE can include at least one of molybdenum (Mo), tungsten (W), silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), and alloys thereof.

[0149] Some of the light emitted from the light-emitting layer EML can not pass through the second electrode CE, and the light reflected from the second electrode CE can be reflected again from the reflective film. That is, the light emitted from the light-emitting layer EML can resonate between the reflective film and the second electrode CE. The light extraction efficiency of the light-emitting element OLED can be improved by the resonance of the light.

[0150] The distance between the reflective film and the second electrode CE can be changed according to the color of the light generated in the light generating layer. That is, according to the color of the light generated in the light generating layer, the distance between the reflective film and the second electrode CE can be adjusted to match the resonance distance.

[0151] A thin film encapsulation layer TFE can be disposed on the second electrode CE. The thin film encapsulation layer TFE can be commonly disposed in the first pixel PX1, the second pixel PX2, and the third pixel PX3. The thin film encapsulation layer TFE can directly cover the second electrode CE. In an embodiment, a cap layer covering the second electrode CE can also be disposed between the thin film encapsulation layer TFE and the second electrode CE. At this time, the thin film encapsulation layer TFE can directly cover the cap layer.

[0152] The thin film encapsulation layer TFE can include a first encapsulation inorganic film IOL1, an encapsulation organic film OL, and a second encapsulation inorganic film IOL2, which are sequentially stacked on the second electrode CE. The encapsulation inorganic films IOL1 and IOL2 can be formed of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride. The encapsulation organic film OL can be formed of an organic insulating material such as polysiloxane, a polyacrylic compound, a polyimide compound, a fluorocarbon compound such as Teflon, or a benzocyclobutene compound.

[0153] An input sensing layer ISL can be disposed on the thin film encapsulation layer TFE. The input sensing layer ISL can include a second buffer layer BS, a first conductive layer IS-CL1, a fourth insulating layer IS-IL1, a second conductive layer IS-CL2, a first low refractive index flat layer LRF1, and a first high refractive index flat layer HRF1.

[0154] The second buffer layer BS can be disposed on the thin film encapsulation layer TFE. The second buffer layer BS can be disposed as a single layer, or can be disposed as a multi-layer of at least two layers. The second buffer layer BS can be an inorganic insulating film formed of an inorganic material. For example, the second buffer layer BS can be formed of silicon nitride, silicon oxide, and / or silicon oxynitride, etc. In some cases, the second buffer layer BS can be omitted.

[0155] The first conductive layer IS-CL1 can be disposed on the second buffer layer BS (or the thin film encapsulation layer TFE), and can include the first connection portion CP1 described with reference to Figure 4

[0156] ​The first conductive layer IS-CL1 can have a single layer structure, or can have a multi-layer structure stacked in a third direction DR3.

[0157] The conductive layer of the single layer structure can include a metal layer or a transparent conductive layer. The metal layer can include molybdenum, silver, titanium, copper, aluminum, and alloys thereof. The transparent conductive layer can include a transparent conductive oxide such as indium tin oxide ("ITO"), indium zinc oxide ("IZO"), zinc oxide ("ZnO"), or indium tin zinc oxide ("ITZO"). In addition, the transparent conductive layer can include a conductive polymer such as PEDOT, metal nanowires, and / or graphene, etc.

[0158] The conductive layer of the multi-layer structure can include a multi-layered metal layer. The multi-layered metal layer can have a three-layer structure, for example, titanium / aluminum / titanium. The conductive layer of the multi-layer structure can include at least one metal layer and at least one transparent conductive layer.

[0159] The fourth insulating layer IS-IL1 can be disposed on the first conductive layer IS-CL1 and the second buffer layer BS (or the thin film encapsulation layer TFE). The fourth insulating layer IS-IL1 can have a single layer structure or a multi-layer structure. The fourth insulating layer IS-IL1 can include an inorganic material, an organic material, or a composite material.

[0160] In an embodiment, the fourth insulating layer IS-IL1 can include an inorganic film. The inorganic film can include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon oxynitride, zirconium oxide, and hafnium oxide. For example, the fourth insulating layer IS-IL1 can include silicon nitride, and can be formed to a thickness of about 100 nm to 300 nm.

[0161] The second conductive layer IS-CL2 can be disposed on the fourth insulating layer IS-IL1. The second conductive layer IS-CL2 can include the first sensor part SP1, the second sensor part SP2 (for example, refer to Figure 4 ), and the second connection part CP2 (for example, refer to Figure 4 ).

[0162] The structure (for example, a single layer structure, a stacked structure) and the material of the second conductive layer IS-CL2 are substantially the same as or similar to those of the first conductive layer IS-CL1, respectively, and thus a repeated description is omitted.

[0163] The second conductive layer IS-CL2 can be in contact with the first conductive layer IS-CL1 through a contact hole that exposes the first conductive layer IS-CL1 by passing through the fourth insulating layer IS-IL1.

[0164] As described with reference to Figure 4 , the second conductive layer IS-CL2 can include the mesh holes IS_OPR, IS_OPG, and IS_OPB.​

[0165] The mesh holes IS_OPR, IS_OPG, and IS_OPB can correspond one-to-one to the light emitting areas PXA-R, PXA-G, and PXA-B. The light emitting areas PXA-R, PXA-G, and PXA-B can be exposed through the mesh holes IS_OPR, IS_OPG, and IS_OPB.

[0166] The first low-refractive flat layer LRF1 can be disposed on the second conductive layer IS-CL2 and can cover the second conductive layer IS-CL2.

[0167] As described with reference to Figure 7 The first low-refractive flat layer LRF1 can include holes ML_OPR1, ML_OPG1, and ML_OPB1, which can correspond one-to-one to the light emitting areas PXA-R, PXA-G, PXA-B (or the mesh holes IS_OPR, IS_OPG, and IS_OPB).

[0168] In an embodiment, the holes ML_OPR1, ML_OPG1, and ML_OPB1 can have sizes that are respectively greater than sizes of the light emitting areas PXA-R, PXA-G, and PXA-B and can have sizes that are respectively smaller than sizes of the mesh holes IS_OPR, IS_OPG, and IS_OPB.

[0169] For example, the first hole ML_OPR1 can have a size (width or area on a plane) that is greater than a size of the first light emitting area PXA-R of the first pixel PX1 and can have a size that is smaller than a size of the first mesh hole IS_OPR. In this case, the first light emitting area PXA-R can be exposed through the first hole ML_OPR1, and the second conductive layer IS-CL2 (or the first sensor portion SP1) can be covered by the first low-refractive flat layer LRF1.

[0170] Similarly, the second hole ML_OPG1 can have a size (width or area on a plane) that is greater than a size of the second light emitting area PXA-G of the second pixel PX2 and can have a size that is smaller than a size of the second mesh hole IS_OPG. The third hole ML_OPB1 can have a size (width or area on a plane) that is greater than a size of the third light emitting area PXA-B of the third pixel PX3 and can have a size that is smaller than a size of the third mesh hole IS_OPB.

[0171] The first low-refractive flat layer LRF1 can have a first side surface SS1 inclined with respect to the upper surface of the fourth insulating layer IS-IL1 in the holes ML_OPR1, ML_OPG1, and ML_OPB1. The first side surface SS1 of the first low-refractive flat layer LRF1 can be configured (e.g., formed) as a total reflection surface with respect to the first high-refractive flat layer HRF1. This will be described later with reference to FIG. 6. Figure 8 This will be described.

[0172] In Figure 7 , the first low-refractive flat layer LRF1 has a trapezoidal cross-sectional shape, but the first low-refractive flat layer LRF1 is not limited thereto. For example, the first low-refractive flat layer LRF1 can have a semi-circular or semi-elliptical cross-sectional shape.

[0173] The first low-refractive flat layer LRF1 can include an organic material. For example, the first low-refractive flat layer LRF1 can be formed of a single film including an organic material such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, or a polyimide resin. However, the disclosure is not limited thereto. For example, the first low-refractive flat layer LRF1 can be formed of an acrylic transparent organic film.

[0174] The first high-refractive flat layer HRF1 (or the second refractive layer) can be disposed directly on the first low-refractive flat layer LRF1 and the fourth insulating layer IS-IL1. The first high-refractive flat layer HRF1 can be disposed entirely on the fourth insulating layer IS-IL1.

[0175] The first high-refractive flat layer HRF1 can have a refractive index greater than that of the first low-refractive flat layer LRF1.

[0176] The first high-refractive flat layer HRF1 can include an organic material. For example, the first high-refractive flat layer HRF1 can be formed of a single layer including an organic material such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, or a polyimide resin, but it is not limited thereto as long as the organic material is an organic material having a refractive index greater than that of the first low-refractive flat layer LRF1.

[0177] Descriptions for the first low-refractive flat layer LRF1 and the first high-refractive flat layer HRF1 can refer to those of the first low-refractive flat layer LRF1 and the first high-refractive flat layer HRF1 of the display device of Figure 8 .

[0178] Figure 8 is a cross-sectional view illustrating an example of a first pixel area included in the display device of Figure 7 . Figure 8A first pixel region PXA1 corresponding to the first pixel PX1 is schematically illustrated focusing on the substrate SUB, the light emitting element layer LDL, the thin film encapsulation layer TFE, and the input sensing layer ISL. Since the first pixel PX1, the second pixel PX2, and the third pixel PX3 are substantially the same as or similar to each other, a repeated description about a second pixel region PXA2 corresponding to the second pixel PX2 and a third pixel region PXA3 corresponding to the third pixel PX3 is omitted.

[0179] Referring to Figure 7 and Figure 8 , the first pixel PX1 can include the substrate SUB, which can include the base layer BL and the pixel circuit layer PCL described with reference to Figure 7 .

[0180] The first light L_E1, which is some of the light emitted from the light emitting element OLED, passes through the thin film encapsulation layer TFE and the fourth insulating layer IS-IL1, and can be obliquely incident on the first high refractive index flat layer HRF1.

[0181] The first light L_E1 can be irradiated onto the first side surface SS1 of the first low refractive index flat layer LRF1 through the first high refractive index flat layer HRF1, all of the first light L_E1 is reflected (or totally reflected) at the first side surface SS1 of the first low refractive index flat layer LRF1 due to a difference (or a refractive index ratio) between a refractive index of the first low refractive index flat layer LRF1 and a refractive index of the first high refractive index flat layer HRF1, and the first light L_E1 reflected from the first low refractive index flat layer LRF1 can be front surface emitted. Accordingly, light output efficiency of the first pixel PX1 (and the display device DD) can be improved.

[0182] In an embodiment, a difference between the refractive index of the first high refractive index flat layer HRF1 and the refractive index of the first low refractive index flat layer LRF1 can be about 0.2 to 0.4. That is, the refractive index of the first high refractive index flat layer HRF1 can be greater than the refractive index of the first low refractive index flat layer LRF1 by about 0.2 to 0.4. For example, the refractive index of the first high refractive index flat layer HRF1 can be about 1.5 or more, about 1.6 to 1.9, or about 1.8. The refractive index of the first low refractive index flat layer LRF1 can be about 1.3 to 1.6 or about 1.5.

[0183] In an embodiment, an inclination angle ANG_C1 (or a cone angle) of the first side surface SS1 of the first low refractive index flat layer LRF1 can be about 60 degrees to 85 degrees or about 70 degrees to 75 degrees.

[0184] In an embodiment, a thickness H1 of the first low refractive index flat layer LRF1 can be about 1 µm to 3 µm, about 1.5 µm to 2.5 µm, or about 1.8 µm to 2 µm.

[0185] The inclination angle ANG_C1 can be determined by a difference between the refractive index of the first high refractive flat layer HRF1 and the refractive index of the first low refractive flat layer LRF1. A critical angle of total reflection can be determined by a difference between the refractive index of the first high refractive flat layer HRF1 and the refractive index of the first low refractive flat layer LRF1, and the inclination angle ANG_C1 of the first low refractive flat layer LRF1 can be determined based on the critical angle and a divergence direction (or a divergence angle) of the first light L_E1 emitted from the light emitting element OLED. The inclination angle ANG_C1 can increase as the difference between the refractive index of the first high refractive flat layer HRF1 and the refractive index of the first low refractive flat layer LRF1 increases.

[0186] Similarly, the thickness H1 of the first low refractive flat layer LRF1 can be determined by the inclination angle ANG_C1. The thickness H1 of the first low refractive flat layer LRF1 can decrease as the inclination angle ANG_C1 increases.

[0187] For example, when the difference between the refractive index of the first high refractive flat layer HRF1 and the refractive index of the first low refractive flat layer LRF1 is 0.3, the inclination angle ANG_C1 (or the maximum inclination angle) for totally reflecting the first light L_E1 can be 70 degrees, and the thickness H1 of the first low refractive flat layer LRF1 can be about 2 µm. As another example, when the difference between the refractive index of the first high refractive flat layer HRF1 and the refractive index of the first low refractive flat layer LRF1 is 0.35, the inclination angle ANG_C1 (or the maximum inclination angle) for totally reflecting the first light L_E1 can be generally about 75 degrees, and the thickness H1 of the first low refractive flat layer LRF1 can be about 1.8 µm.

[0188] As described with reference to Figure 7 and Figure 8 The first low refractive flat layer LRF1 can be formed on the second conductive layer IS-CL2 in the input sensing layer ISL with the holes ML_OPR1, ML_OPG1, and ML_OPB1, through which the light emitting areas PXA-R, PXA-G, and PXA-B are exposed, formed in the first low refractive flat layer LRF1, and the first high refractive flat layer HRF1 can be entirely disposed on the first low refractive flat layer LRF1. Accordingly, the first light L_E1, which is obliquely incident on the first high refractive flat layer HRF1, is totally reflected by the first low refractive flat layer LRF1, and the light output efficiency of the pixel PX can be improved.

[0189] In addition, as will be described later, the first low refractive flat layer LRF1 is formed on the second conductive layer IS-CL2 in the input sensing layer ISL, and thus the manufacturing process of the display device DD can be simplified.

[0190] Figure 9 is a view showing an example of an image displayed on a display device of Figure 1 .

[0191] Referring to Figure 1 , Figure 6 and Figure 9 , the first image IMAGE1 and the second image IMAGE2 can correspond to the second region A2 shown in Figure 6 .

[0192] The first image IMAGE1 and the second image IMAGE2 can correspond to the first to third pixels PX1 to PX3 corresponding to the line I-I' of Figure 5 .

[0193] When the display device DD does not include the first low-refractive flat layer LRF1, as shown in the first image IMAGE1, the point image displayed by the pixel PX can have the same shape as that of the first, second, and third light emitting regions PXA-R, PXA-G, and PXA-B shown in Figure 6 .

[0194] When the display device DD includes the first low-refractive flat layer LRF1 and the first high-refractive flat layer HRF1 according to the disclosed embodiments, as shown in the second image IMAGE2, the point image displayed by the pixel PX can have a shape corresponding to the shapes of the holes ML_OPR1, ML_OPG1, and ML_OPB1 of the first low-refractive flat layer LRF1. That is, in addition to the light directly emitted from the first, second, and third light emitting regions PXA-R, PXA-G, and PXA-B, light that is totally reflected by the first side surface SS1 of the first low-refractive flat layer LRF1 in the holes ML_OPR1, ML_OPG1, and ML_OPB1 can be additionally emitted.

[0195] The light output efficiency of the pixel PX can be improved by about 10% to 20% by the first low-refractive flat layer LRF1.

[0196] Figures 10A-10E is a cross-sectional view of an input sensing layer, which shows a method of manufacturing the input sensing layer included in a display device of Figure 8 . For convenience of description, in Figures 10A-10E , the lower components of the thin film encapsulation layer TFE, i.e., the light emitting element layer LDL, are omitted.

[0197] Referring to Figure 10A , a base portion BS (or a second buffer layer) can be formed on the thin film encapsulation layer TFE. The base portion BS can function as a buffer layer and can be formed of silicon nitride (SiN x ).

[0198] The first connection part CP1 (or the first conductive layer IS-CL1 (see, for example, Figure 7 )) can be formed on the base part BS. For example, a conductive layer can be formed on the base part BS, and the first connection part CP1 can be formed by patterning the conductive layer.

[0199] Referring to Figure 10B , a fourth insulating layer IS-IL1 can be formed on the base part BS to cover the first connection part CP1, and a contact hole exposing the first connection part CP1 can be formed by a photolithography process.

[0200] Thereafter, referring to Figure 10C , a first sensor part SP1 (or a second conductive layer IS-CL2 (see, for example, Figure 7 )) can be formed on the fourth insulating layer IS-IL1, and a portion of the first sensor part SP1 can contact the first connection part CP1 through the contact hole of the fourth insulating layer IS-IL1. For example, a conductive layer can be formed on the fourth insulating layer IS-IL1, and the first sensor part SP1 can be formed by patterning the conductive layer.

[0201] Referring to Figure 10D , a first low-refractive flat layer LRF1 covering the first sensor part SP1 can be formed. For example, an organic layer including the first low-refractive flat layer LRF1 can be formed on the entire surface of the first sensor part SP1, a mask can be disposed on the organic layer, the organic layer can be partially exposed to light through the mask, and the first low-refractive flat layer LRF1 can be formed by partially removing the organic layer with a developer.

[0202] Thereafter, referring to Figure 10E , a first high-refractive flat layer HRF1 can be formed on the fourth insulating layer IS-IL1 to cover the first low-refractive flat layer LRF1.

[0203] As described with reference to Figures 10A-10E , a display device DD having improved light output efficiency can be manufactured by adding only a process of forming the first low-refractive flat layer LRF1 covering the first sensor part SP1 and a process of forming the first high-refractive flat layer HRF1. In particular, in the fact that an insulating layer (or a flat layer) covering the first sensor part SP1 is required in the input sensing layer ISL to protect the first sensor part SP1 from external influences, a display device DD having improved light output efficiency can be manufactured substantially only by adding a process of forming the first low-refractive flat layer LRF1 (i.e., by simplifying a manufacturing process or minimizing a manufacturing process).

[0204] Figure 11 is a cross-sectional view showing another example of a display device taken along lines I-I' and lines II-II' of Figure 5

[0205] Referring to Figure 5 , Figure 7 and Figure 11 , Figure 11 The display device DD of Figure 7 differs from the display device DD of Figure 11 in that the display device DD of further includes an anti-reflection layer RPL.

[0206] Since the base layer BL, the buffer layer BFL, the pixel circuit layer PCL, the light emitting element layer LDL, and the input sensing layer ISL included in the display device DD of Figure 11 are substantially the same as or similar to the base layer BL, the buffer layer BFL, the pixel circuit layer PCL, the light emitting element layer LDL, and the input sensing layer ISL described with reference to Figure 7 , a repeated description can be omitted.

[0207] The anti-reflection layer RPL can be formed on the input sensing layer ISL, and can include a light-transmitting layer CFL (or a color conversion layer or a color filter layer), a second low-refractive flat layer LRF2 (or a third refractive layer), and a second high-refractive flat layer HRF2 (or a fourth refractive layer).

[0208] The light-transmitting layer CFL can include a black matrix BM and color filters CFR, CFG, and CFB.

[0209] The black matrix BM can have a grid pattern or a grid structure similar to the first sensor portion SP1 described with reference to Figure 5 , or can have openings corresponding to the opening portions OP of the pixel definition layer PDL described with reference to Figure 7 . The black matrix BM can not be overlapped with the opening portions OP of the pixel definition layer PDL.

[0210] The openings of the black matrix BM can be larger than or equal to the opening portions OP of the pixel definition layer PDL. For example, in a plane, the area of the openings of the black matrix BM can be larger than the area of the opening portions OP of the pixel definition layer PDL, and in a plane, the width of the black matrix BM between the pixels PX can be smaller than the width of the pixel definition layer PDL.

[0211] The color filters CFR, CFG, and CFB can be disposed to cover the openings of the black matrix BM. That is, the color filters CFR, CFG, and CFB can be disposed on the black matrix BM and the first high refractive flat layer HRF1 exposed by the openings of the black matrix BM. The color filters CFR, CFG, and CFB can completely cover the black matrix BM.

[0212] For example, when at least a portion of the black matrix BM is exposed by the color filters CFR, CFG, and CFB or a second low refractive flat layer LRF2 to be described later is directly disposed on the black matrix BM, light can be refracted or reflected between the sidewalls of the color filters CFR, CFG, and CFB and the second low refractive flat layer LRF2, and thus light output efficiency can not be improved or can be reduced. Accordingly, the color filters CFR, CFG, and CFB can completely cover the black matrix BM.

[0213] The second low refractive flat layer LRF2 can be disposed on the light-transmissive layer CFL and can be superposed with the black matrix BM.

[0214] The second low refractive flat layer LRF2 can be disposed on the light-transmissive layer CFL and can be superposed with the black matrix BM. Figure 7 Similar to the first low refractive flat layer LRF1 described with reference to FIGS. 1A and 1B, the second low refractive flat layer LRF2 can include the auxiliary holes ML_OPR2, ML_OPG2, and ML_OPB2, which can correspond one-to-one to the light emitting areas PXA-R, PXA-G, and PXA-B (or the grid holes IS_OPR, IS_OPG, and IS_OPB).

[0215] In an embodiment, the sizes of the auxiliary holes ML_OPR2, ML_OPG2, and ML_OPB2 can be greater than the sizes of the light emitting areas PXA-R, PXA-G, and PXA-B, respectively, and can be greater than the sizes of the holes ML_OPR1, ML_OPG1, and ML_OPB1 of the first low refractive flat layer LRF1, respectively.

[0216] For example, the size (width or area on a plane) of the first auxiliary hole ML_OPR2 can be greater than the size of the first light emitting area PXA-R of the first pixel PX1, and can be greater than the size of the first hole ML_OPR1. Similarly, the size of the second auxiliary hole ML_OPG2 can be greater than the size of the second light emitting area PXA-G of the second pixel PX2, and can be greater than the size of the second hole ML_OPG1. The size of the third auxiliary hole ML_OPB2 can be greater than the size of the third light emitting area PXA-B of the third pixel PX3, and can be greater than the size of the third hole ML_OPB1.

[0217] The second low-refractive-index planarization layer LRF2 may have a second side surface SS2 inclined relative to the light-transmitting layer CFL in the auxiliary apertures ML_OPR2, ML_OPG2, and ML_OPB2. The second side surface SS2 of the second low-refractive-index planarization layer LRF2 may be configured (e.g., forming) a total reflection surface with respect to the second high-refractive-index planarization layer HRF2.

[0218] Similar to the first low-refractive-index planarization layer LRF1, the second low-refractive-index planarization layer LRF2 may include organic materials.

[0219] The second high-refractive-index planarization layer HRF2 can be directly disposed on the second low-refractive-index planarization layer LRF2 and the light-transmitting layer CFL. The second high-refractive-index planarization layer HRF2 can be disposed on the entire surface of the light-transmitting layer CFL.

[0220] The second high-refractive-index planarization layer HRF2 can have a higher refractive index than the second low-refractive-index planarization layer LRF2.

[0221] Similar to the first high refractive index planarization layer HRF1, the second high refractive index planarization layer HRF2 may include organic materials.

[0222] For a description of the second low-refractive-index planarization layer LRF2 and the second high-refractive-index planarization layer HRF2, please refer to... Figure 12 .

[0223] Figure 12 It is shown that it includes Figure 11 A cross-sectional view of an example of the first pixel region in a display device. Figure 12 The first pixel region PXA1 corresponding to the first pixel PX1 is schematically shown, which is concentrated in the substrate SUB, the light-emitting element layer LDL, the thin film encapsulation layer TFE, the input sensing layer ISL, and the anti-reflection layer RPL.

[0224] Reference Figure 8 , Figure 11 and Figure 12 In addition to the anti-reflective layer PRL, Figure 12 The display device DD shown in the figure Figure 8 The display devices DD are basically the same or similar, so repeated descriptions can be omitted.

[0225] In an embodiment, a difference between the refractive index of the second high refractive flat layer HRF2 and the refractive index of the second low refractive flat layer LRF2 can be less than or equal to a difference between the refractive index of the first high refractive flat layer HRF1 and the refractive index of the first low refractive flat layer LRF1. For example, the difference between the refractive index of the second high refractive flat layer HRF2 and the refractive index of the second low refractive flat layer LRF2 can be about 0.2 to 0.3, and the refractive index of the second high refractive flat layer HRF2 can be 0.2 to 0.3 greater than the refractive index of the second low refractive flat layer LRF2.

[0226] In an embodiment, a second tilt angle ANG_C2 of the second side surface SS2 of the second low refractive flat layer LRF2 can be greater than or equal to a tilt angle ANG_C1 of the first side surface SS1 of the first low refractive flat layer LRF1. For example, the second tilt angle ANG_C2 of the second side surface SS2 of the second low refractive flat layer LRF2 can be about 70 degrees to 85 degrees or about 75 degrees to 80 degrees.

[0227] The first light L_E1 incident on the first low refractive flat layer LRF1 of the input sensing layer ISL can be generally reflected in the third direction DR3 due to the first low refractive flat layer LRF1 of the input sensing layer ISL. The second light L_E2 not incident on the first low refractive flat layer LRF1 of the input sensing layer ISL can be reflected by the second low refractive flat layer LRF2. Since the second light L_E2 has a relatively large tilt angle than the tilt angle of the first light L_E1, the second tilt angle ANG_C2 of the second side surface SS2 of the second low refractive flat layer LRF2 can be relatively large. Also, since the critical angle of total reflection of the second low refractive flat layer LRF2 is relatively small, the difference between the refractive index of the second high refractive flat layer HRF2 and the refractive index of the second low refractive flat layer LRF2 can be relatively small.

[0228] In an embodiment, a thickness H2 of the second low refractive flat layer LRF2 can be less than or equal to a thickness H1 of the first low refractive flat layer LRF1, and a sum of the thickness H2 of the second low refractive flat layer LRF2 and the thickness H1 of the first low refractive flat layer LRF1 can be about 1 µm to 3 µm, about 1.5 µm to 2.5 µm, or about 1.8 µm to 2 µm.

[0229] Figure 8 The display device DD of FIG. 1 can have a relatively large thickness to generally reflect light (e.g., the second light L_E2 shown in FIG. 2) obliquely emitted from the upper surface of the light emitting element OLED by using one first low refractive flat layer LRF1. Figure 12 Alternatively, the display device DD of FIG. 1 can have a relatively small thickness to generally reflect light (e.g., the second light L_E2 shown in FIG. 2) obliquely emitted from the upper surface of the light emitting element OLED by using two first low refractive flat layers LRF1. Figure 12In addition to the first low-refractive-index planarization layer LRF1, the display device DD also includes a second low-refractive-index planarization layer LRF2, which is an anti-reflective layer RPL. Therefore, the thickness H1 of the first low-refractive-index planarization layer LRF1 can be relatively small.

[0230] For reference Figure 12 In addition to the optical path control structure (i.e., the first low-refractive-index planarization layer LRF1 and the first high-refractive-index planarization layer HRF1) formed in the input sensing layer ISL, the display device DD may also include an optical path control structure (i.e., the second low-refractive-index planarization layer LRF2 and the second high-refractive-index planarization layer HRF2) formed in the anti-reflection layer RPL. Therefore, the light output efficiency of the display device DD (or pixel PX) can be improved.

[0231] Figure 13 It is shown Figure 1 A cross-sectional view of another example of a display device. Figure 13 It shows the relationship with Figure 11 The display device corresponding to the display device. Figure 14 It is shown that it includes Figure 13 A cross-sectional view of an example of the first pixel region in a display device.

[0232] Reference Figures 11-14 , Figure 13 Display device DD and Figure 11 The difference between the display device DD and the other device is that... Figure 13 The display device DD does not include the input sensing layer ISL.

[0233] Because it is included Figure 13 The substrate layer BL, buffer layer BFL, pixel circuit layer PCL, light-emitting element layer LDL, and anti-reflective layer RPL in the display device DD are respectively connected to... Figure 11 The substrate layer BL, buffer layer BFL, pixel circuit layer PCL, light-emitting element layer LDL, and anti-reflection layer RPL shown are basically the same or similar, so repeated descriptions can be omitted.

[0234] The anti-reflective layer RPL can be formed on the light-emitting element layer LDL, and can include the light-transmitting layer CFL, the second low-refractive-index planarization layer LRF2, and the second high-refractive-index planarization layer HRF2.

[0235] The light-transmitting layer CFL may include a black matrix BM and color filters CFR, CFG and CFB.

[0236] The second low-refractive-index planarization layer LRF2 can be disposed on the light-transmitting layer CFL and can be superimposed on the black matrix BM.

[0237] With reference Figure 11Similar to the second low-refractive-index planarization layer LRF2, the second low-refractive-index planarization layer LRF2 may include auxiliary holes ML_OPR2, ML_OPG2 and ML_OPB2, which may correspond one-to-one with the light-emitting regions PXA-R, PXA-G and PXA-B (or the mesh holes IS_OPR, IS_OPG and IS_OPB).

[0238] In the embodiment, the sizes of the auxiliary holes ML_OPR2, ML_OPG2 and ML_OPB2 can be larger than the sizes of the light-emitting regions PXA-R, PXA-G and PXA-B, respectively, and can be larger than the size of the black matrix BM in the non-light-emitting region NPXA, respectively.

[0239] For example, the size (width or area on the plane) of the first auxiliary aperture ML_OPR2 can be larger than the size of the first light-emitting area PXA-R of the first pixel PX1, and can be larger than the width of the black matrix BM.

[0240] The second low-refractive-index planarization layer LRF2 may have a second side surface SS2 inclined relative to the light-transmitting layer CFL in the auxiliary apertures ML_OPR2, ML_OPG2, and ML_OPB2. The second side surface SS2 of the second low-refractive-index planarization layer LRF2 may be configured (e.g., forming) a total reflection surface with respect to the second high-refractive-index planarization layer HRF2.

[0241] like Figure 14 As shown, a second light L_E2, which is part of the light emitted from the light-emitting element OLED, can pass through the second high refractive index planarization layer HRF2 and irradiate the second side surface SS2 of the second low refractive index planarization layer LRF2. It can be totally reflected at the second side surface SS2 of the second low refractive index planarization layer LRF2 due to the difference (or refractive index ratio) between the refractive index of the second low refractive index planarization layer LRF2 and the refractive index of the second high refractive index planarization layer HRF2.

[0242] In an embodiment, the refractive index of the second high-refractive-index planarization layer HRF2 may be approximately 0.2 to 0.4 greater than the refractive index of the second low-refractive-index planarization layer LRF2. For example, the refractive index of the second high-refractive-index planarization layer HRF2 may be about 1.5 or greater, about 1.6 to 1.9, or about 1.8. The refractive index of the second low-refractive-index planarization layer LRF2 may be about 1.3 to 1.6 or about 1.5.

[0243] In an embodiment, the second tilt angle ANG_C2 (or cone angle) of the second side surface SS2 of the second low refractive index flat layer LRF2 can be about 60 degrees to 85 degrees or about 70 degrees to 75 degrees.

[0244] In an embodiment, the thickness H2 of the second low-refractive flat layer LRF2 can be about 1 µm to 3 µm, about 1.5 µm to 2.5 µm, or about 1.8 µm to 2 µm.

[0245] The relationship between the refractive index difference, the second inclination angle ANG_C2, and the thickness H2 is basically the same as that described with reference to Figure 8 The relationship between the refractive index difference, the first inclination angle ANG_C1, and the thickness H1 described is basically the same, and thus repeated description can be omitted.

[0246] As described with reference to Figure 13 and Figure 14 , when the display device DD does not include the input sensing layer ISL (for example, with reference to Figure 11 ), the light path control structure (i.e., the second low-refractive flat layer LRF2 and the second high-refractive flat layer HRF2) can be formed in the anti-reflection layer RPL. Thus, the light output efficiency of the pixel PX can be improved.

[0247] Further, similar to the manufacturing process described with reference to Figures 10A-10E , the display device DD having improved light output efficiency can be manufactured substantially only by adding the process of forming the second low-refractive flat layer LRF2 and the process of forming the second high-refractive flat layer HRF2 (i.e., by simplifying the manufacturing process or minimizing the manufacturing process).

[0248] Figure 15 is a cross-sectional view showing still another example of a display device taken along a line I-I’ and a line II-II’ of Figure 5 .

[0249] With reference to Figure 11 and Figure 15 , Figure 15 , the display device DD of Figure 11 differs from the display device DD of in that the input sensing layer ISL does not include the first low-refractive flat layer LRF1 and the first high-refractive flat layer HRF1.

[0250] Figure 15 Since the base layer BL, the buffer layer BFL, the pixel circuit layer PCL, and the light emitting element layer LDL included in the display device DD of Figure 11 are basically the same as or similar to the base layer BL, the buffer layer BFL, the pixel circuit layer PCL, and the light emitting element layer LDL shown in , repeated description can be omitted.

[0251] The input sensing layer ISL can be disposed on the thin film encapsulation layer TFE. The input sensing layer ISL can include a second buffer layer BS, a first conductive layer IS-CL1, a fourth insulating layer IS-IL1, a second conductive layer IS-CL2, and a fifth insulating layer IS-IL2.

[0252] Because the second buffer layer BS, the first conductive layer IS-CL1, the fourth insulating layer IS-IL1, and the second conductive layer IS-CL2 are... Figure 11 The second buffer layer BS, the first conductive layer IS-CL1, the fourth insulating layer IS-IL1, and the second conductive layer IS-CL2 shown are basically the same or similar, so repeated descriptions can be omitted.

[0253] The fifth insulating layer IS-IL2 can be disposed on the second conductive layer IS-CL2 and the fourth insulating layer IS-IL1. The fifth insulating layer IS-IL2 can have a single-layer structure or a multi-layer structure. The fifth insulating layer IS-IL2 can include inorganic materials, organic materials, or composite materials.

[0254] In this embodiment, the fifth insulating layer IS-IL2 may include an inorganic film. The inorganic film may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon oxynitride, zirconium oxide, and hafnium oxide. For example, the fifth insulating layer IS-IL2 may include silicon oxide.

[0255] For reference Figure 15 The display device DD may include only the optical path control structure formed in the anti-reflective layer RPL (i.e., the second low refractive index planarization layer LRF2 and the second high refractive index planarization layer HRF2).

[0256] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are used to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Therefore, without departing from the spirit and scope of the inventive concept, the first element, first component, first region, first layer, or first portion discussed above may be referred to as a second element, second component, second region, second layer, or second portion.

[0257] For the purposes of this description, spatially relative terms such as "beneath", "below", "lower", "under", "above", "upper" and the like can be used to describe one element's or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device is inverted or rotated by 90 degrees, then an element described as "below" or "beneath" another element or feature would then be oriented "above" the other element or feature. The spatially relative terms can be interpreted differently depending on the particular orientation of the device in use or operation. Accordingly, the spatially relative terms are intended to be construed in the context of the present description as only used for purposes of describing the particular embodiments. It is also to be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the figures. For example, if a device is inverted or rotated by 90 degrees, then an element described as "below" or "beneath" another element or feature would then be oriented "above" the other element or feature. The spatially relative terms can be interpreted differently depending on the particular orientation of the device in use or operation. Accordingly, the spatially relative terms are intended to be construed in the context of the present description as only used for purposes of describing the particular embodiments. Furthermore, the term "between" used when describing layers can mean that there are no intervening layers, or there can be one or more intervening layers.

[0258] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the inventive concept. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0259] For the purposes of this disclosure, "at least one of X, Y, and Z" and "at least one of the group consisting of X, Y, and Z" can be interpreted to include only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as XYZ, XYY, YZ, and ZZ.

[0260] In addition, the use of "may" when describing embodiments of the inventive concept represents that one or more embodiments of the inventive concept. Further, the term "exemplary" is intended to indicate an example or an illustration.

[0261] It will be understood that when an element or layer is referred to as being “on” another element or layer, “connected to” another element or layer, “coupled to” another element or layer, or “adjacent” another element or layer, it can be directly on, directly connected to, directly coupled to, or in direct adjacency to, the other element or layer, or one or more intervening elements or layers can also be present. In contrast, when an element or layer is referred to as being “directly on,” “directly connected to,” “directly coupled to,” or “directly adjacent” another element or layer, there are no intervening elements or layers present.

[0262] As used herein, the terms “substantially,” “approximately,” and similar terms are used as terms of approximation and not as terms of degree, and are intended to account for the inherent deviations in measured or computed values that would be recognized by those of ordinary skill in the art.

[0263] As used herein, the term “use” and variations thereof are considered synonymous with the term “utilize” and variations thereof.

[0264] Further, any numerical ranges herein are intended to include all sub-ranges of the same numerical precision, contained therein. For example, a range of 1.0 to 10.0 should be read to include the range from 2.4 to 7.6, and so on. Any maximum numerical limitation should be read as a minimum numerical limitation, and any minimum numerical limitation should be read as a maximum numerical limitation. Accordingly, the application reserves the right to amend the specification, including the claims, to expressly recite any sub-range included in the ranges explicitly recited in this specification. All such ranges are intended to be inherently described in this specification.

[0265] The display apparatus and / or any other related apparatus or components according to embodiments of the present application described herein can be implemented using any suitable hardware, firmware (e.g., dedicated integrated circuit), software, or suitable combination of software, firmware, and hardware. For example, various components of the display apparatus can be formed on one integrated circuit (IC) chip or on separate IC chips. Further, various components of the display apparatus can be implemented on a flexible printed circuit film, a tape carrier package (TCP), a printed circuit board (PCB), or formed on the same substrate. Further, various components of the display apparatus can be processes or threads, running on one or more processors in one or more computing devices, executing computer program instructions and interacting with other system components for the purpose of displaying various functions described herein. The computer program instructions are stored in a memory which can be implemented in a computing device using standard memory devices, such as random access memory (RAM). The computer program instructions can also be stored in other non-transitory computer readable media such as, for example, CD-ROMs, or flash drives, etc. Additionally, those skilled in the art will recognize that the functionality of various computing devices can be combined or integrated into a single computing device, or the functionality of a particular computing device can be distributed across one or more other computing devices, without departing from the scope of exemplary embodiments of the present application.

[0266] The scope of the disclosure is not limited to the details of the specific embodiments described herein but is instead defined by the claims and their equivalents. Furthermore, it will be understood that all changes or modifications in the meaning and scope of the claims and their equivalents are intended to be included.

Claims

1. A display device comprising: a substrate having a light emitting region; a light emitting element layer including a light emitting element in the light emitting region; and a sensing layer on the light emitting element layer, and including: a sensing electrode including a plurality of sensor portions arranged in one direction, each of the plurality of sensor portions having a mesh pattern having a first opening superposed with the light emitting region; a first refractive layer directly on the sensing electrode, and having a second opening superposed with the light emitting region; and a second refractive layer on the light emitting element layer and the first refractive layer, a first optical refractive index of the first refractive layer being smaller than a second optical refractive index of the second refractive layer. the light emitting element layer further includes a pixel defining layer having a third opening defining the light emitting region, and 2. The display device according to claim 1, wherein wherein the light emitting element is positioned in the third opening. the light emitting element includes a first electrode, a light emitting layer, and a second electrode stacked in order.

3. The display device of claim 2, wherein, the second opening is larger in size than the third opening, and is smaller in size than the first opening.

4. The display device according to claim 2, wherein the second optical refractive index of the second refractive layer is greater than the first optical refractive index of the first refractive layer by 0.2 to 0.

4.

5. The display device according to claim 1, wherein each of the first refractive layer and the second refractive layer includes at least one of an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, and a polyimide resin.

6. The display device of claim 5, wherein, the first refractive layer has a first side surface inclined with respect to an upper surface of the light emitting element layer at the second opening, 7. The display device according to claim 5, wherein wherein a first inclination angle of the first side surface is in a range of 60 degrees to 85 degrees, and wherein the first inclination angle increases as a difference between the first optical refractive index of the first refractive layer and the second optical refractive index of the second refractive layer increases. the first refractive layer has a thickness of 1 µm to 3 µm, and 8. The display device of claim 7, wherein, wherein the thickness decreases as the first inclination angle increases. the second opening has a planar shape different from a planar shape of the first opening.

9. The display device according to claim 1, wherein the first opening has a planar shape of a rhombus, and 10. The display device of claim 9, wherein, wherein the second opening has a planar shape of a circle. a size of the second opening is set based on a color of light emitted from the light emitting element.

11. The display device of claim 10, wherein, the substrate includes a pixel region, and 12. The display device of claim 1, wherein, wherein each of the pixel regions includes the light emitting region. 13.The display device of claim 1, further comprising: an anti-reflection layer on the sensing layer, and including: a light transmission layer including a color filter superposed with the light emitting region; a third refractive layer on the light transmission layer, and including a fourth opening superposed with the light emitting region; and a fourth refractive layer on the light transmission layer and the third refractive layer, and wherein a third optical refractive index of the third refractive layer is smaller than a fourth optical refractive index of the fourth refractive layer. the light transmission layer further includes a black matrix not superposed with the light emitting region, 14. The display device of claim 13, wherein, wherein the color filter covers the black matrix, and wherein the third refractive layer is directly on the color filter. ​ 15. The display device of claim 13, wherein, A difference between the fourth optical refractive index of the fourth refractive layer and the third optical refractive index of the third refractive layer is less than or equal to a difference between the second optical refractive index of the second refractive layer and the first optical refractive index of the first refractive layer.

16. The display device of claim 15, wherein, The first refractive layer has a first side surface inclined with respect to an upper surface of the light emitting element layer at the second opening, wherein the third refractive layer has a second side surface inclined with respect to the upper surface of the light emitting element layer at the fourth opening, and wherein a second inclination angle of the second side surface is greater than or equal to a first inclination angle of the first side surface.

17. The display device of claim 16, wherein, A total thickness of the first refractive layer and the third refractive layer is in a range of 1 μm to 3 μm. 18.A display device, the display device comprising: a substrate having a light emitting region; a light emitting element layer including light emitting elements in the light emitting region; and an anti-reflection layer on the light emitting element layer, and including: a light transmitting layer including a black matrix not superposed with the light emitting region and a color filter superposed with the light emitting region, wherein the black matrix has a grid pattern, and the color filter is disposed in a grid hole of the grid pattern and completely covers the black matrix; a first refractive layer on the light transmitting layer, superposed with the black matrix, and having an opening superposed with the light emitting region; and a second refractive layer on the light transmitting layer and the first refractive layer, and wherein a first optical refractive index of the first refractive layer is smaller than a second optical refractive index of the second refractive layer. 19.The display device of claim 18, wherein the first refractive layer is directly on the color filter.

20. The display device of claim 18, wherein, The second optical refractive index of the second refractive layer is greater than the first optical refractive index of the first refractive layer by 0.2 to 0.

4.

21. The display device of claim 20, wherein, Each of the first refractive layer and the second refractive layer includes at least one of an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, and a polyimide resin.

22. The display device of claim 20, wherein, The first refractive layer has a first side surface inclined with respect to an upper surface of the light emitting element layer at the opening, a first inclination angle of the first side surface is in a range of 60 degrees to 85 degrees, and wherein the first inclination angle increases as a difference between the first optical refractive index of the first refractive layer and the second optical refractive index of the second refractive layer increases.

23. The display device of claim 22, wherein, The first refractive layer has a thickness of 1 μm to 3 μm, and the thickness decreases as the first inclination angle increases.

Images