Display device

Abstract

A display device is provided. The display device includes a first substrate, a first detection electrode located on the first substrate, a first bank including an opening exposing the first detection electrode, a photosensitive layer located on the first detection electrode, a second detection electrode located on the photosensitive layer, a first electrode located on the second detection electrode, a second bank including an opening exposing the first electrode, a light-emitting layer located on the first electrode, a second electrode located on the light-emitting layer, a first optical system located between the second detection electrode and the first electrode, and a second optical system located on the second electrode, wherein the first optical system and the second optical system overlap with the photosensitive layer in the thickness direction of the display device.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefit of Korean Patent Application No. 10 - 2019 - 0097493, filed with the Korean Intellectual Property Office on August 9, 2019, the entire disclosure of which is incorporated herein by reference. Technical field

[0003] Embodiments of the present disclosure relate to a display device. Background art

[0004] With the development of multimedia, the importance of display devices is increasing. Accordingly, various display devices such as liquid crystal display devices (LCDs), organic light - emitting display devices (OLEDs), and the like are used. An organic light - emitting display device has excellent viewing angles as a self - emissive element and is thus attracting much attention as a next - generation display device.

[0005] A detection element capable of recognizing biometric information such as a user's fingerprint or the like can be embedded in a display panel of an organic light - emitting display device. Summary of the invention

[0006] Embodiments of the present disclosure are directed to providing a display device capable of biometric recognition and capable of preventing or reducing deterioration of display quality.

[0007] In addition, embodiments of the present disclosure are directed to providing a display device capable of improving the signal - to - noise ratio (SNR) of a detection element.

[0008] Features provided by the present disclosure are not limited to the above - mentioned features, and other technical features not mentioned herein can be understood by those of ordinary skill in the art from the specification and the drawings.

[0009] According to some exemplary embodiments of the present disclosure, a display device includes a first substrate, a first detection electrode on the first substrate, a first bank including an opening exposing the first detection electrode, a photosensitive layer on the first detection electrode, a second detection electrode on the photosensitive layer, a first electrode on the second detection electrode, a second bank including an opening exposing the first electrode, a light - emitting layer on the first electrode, a second electrode on the light - emitting layer, a first optical system between the second detection electrode and the first electrode, and a second optical system on the second electrode, wherein the first optical system and the second optical system overlap with the photosensitive layer in the thickness direction of the display device.

[0010] In some exemplary embodiments, the first optical system includes a first optical layer including a plurality of through - holes and a first filling layer filling the plurality of through - holes of the first optical layer.

[0011] In some exemplary embodiments, the first optical layer includes a metallic material, and the first filling layer includes a transparent organic material.

[0012] In some exemplary embodiments, the second optical system does not overlap with the first electrode in the thickness direction of the display device.

[0013] In some exemplary embodiments, the width of the first optical system in the first direction is greater than the width of the first detection electrode in the first direction.

[0014] In some exemplary embodiments, the second detection electrode includes a hole region that passes through the second detection electrode in the thickness direction of the display device, and the hole region exposes the first bank.

[0015] In some exemplary embodiments, the hole region at least partially overlaps with the first electrode.

[0016] In some exemplary embodiments, the display device further includes a first source electrode and a first drain electrode located on the first substrate, and the first electrode is electrically connected to the first source electrode or the first drain electrode through a contact hole passing through the first bank.

[0017] In some exemplary embodiments, the contact hole is located in the hole region.

[0018] In some exemplary embodiments, the display device further includes a second source electrode and a second drain electrode located on the same layer as the first source electrode, and the first detection electrode is electrically connected to the second source electrode or the second drain electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and other aspects and features of the present disclosure will become more apparent by referring to the exemplary embodiments of the present disclosure described with reference to the accompanying drawings, in which:

[0020] Figure 1 is a plan view of a display device according to an embodiment;

[0021] Figure 2 is according to an embodiment of Figure 1 the side view of the display device in;

[0022] Figure 3 is according to an embodiment along Figure 1 the cross-sectional view taken along line III-III' in;

[0023] Figure 4 is according to an embodiment of Figure 1 the plan view of the pixel in;

[0024] Figure 5 is according to an embodiment along Figure 4 the cross-sectional view taken along line V-V' in;

[0025] Figure 6 is a plan view of the first optical system in Figure 5 ;

[0026] Figure 7 is a cross-sectional view taken along line VII-VII' in Figure 6 according to an embodiment;

[0027] Figure 8 is a plan view of the second optical system in Figure 5 according to an embodiment;

[0028] Figure 9 is a cross-sectional view taken along line IX-IX' in Figure 8 according to an embodiment;

[0029] Figure 10 is an enlarged cross-sectional view of region A in Figure 5 according to an embodiment; and

[0030] Figure 11 is a cross-sectional view taken along line V-V' in Figure 4 according to an embodiment for describing the process of identifying a user's fingerprint. DETAILED DESCRIPTION

[0031] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, which show some embodiments of the present disclosure. However, the embodiments of the present disclosure are not limited to the embodiments shown and described herein, and the subject matter of the present disclosure may be implemented in different forms. On the contrary, the embodiments shown and described herein are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.

[0032] It will also be understood that when a layer is referred to as being "on" another layer or substrate, the layer may be directly on the other layer or substrate, or there may be an intermediate layer. Unless otherwise specified in the context, the singular forms used herein may include the plural forms.

[0033] Throughout the specification, the same reference numerals indicate the same components.

[0034] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0035] In the specification, the first direction DR1 refers to the X-axis direction, the second direction DR2 refers to the Y-axis direction, and the third direction DR3 refers to the Z-axis direction.

[0036] Figure 1 is a plan view of the display device 1 according to an embodiment, and Figure 2is according to an embodiment Figure 1 is a side view of the display device 1 in

[0037] Referring to Figure 1 and Figure 2 , the display device 1 is a device configured to display video or still images, and the display device 1 can be used as a display screen for a portable electronic device (such as, by way of example, a mobile phone, a smart phone, a tablet computer, a smart watch, a watch phone, a mobile communication terminal, an electronic notebook, an e - book, a portable multimedia player (PMP), a navigation device, an ultra - mobile personal computer (UMPC), and the like), but the embodiment is not limited thereto. The display device 1 can be used as a display screen for any suitable product (such as, by way of example, a television, a notebook, a monitor, a billboard, an Internet of Things device, and / or the like).

[0038] The display device 1 may include a display panel 10. The display panel 10 may be a flexible board including a flexible polymer material (such as, by way of example, polyimide and / or the like). Accordingly, the display panel 10 may be bent, folded, rolled, and / or curled.

[0039] The display panel 10 may include a display area DA and a non - display area NDA. The display area DA is a portion configured to display an image, and the non - display area NDA is a portion of the display panel 10 other than the display area DA. The display area DA may include a plurality of pixels PX.

[0040] The display panel 10 may include a main region MR and a bent region BR connected to one side of the main region MR. The display panel 10 may further include a sub - region SR connected to the bent region BR (for example, connected to one side of the bent region BR) and overlapping the main region MR in the thickness direction. As used herein, the "thickness direction" may refer to the thickness direction of the display device 1.

[0041] The main region MR may include the display area DA. The peripheral edge portion of the display area DA of the main region MR may be the non - display area NDA.

[0042] The main region MR may have a shape similar to the appearance of the display device 1 (for example, similar to the shape of the display device 1) in a plan view. The main region MR may be a flat region located at one side of the display device 1. However, the present disclosure is not limited thereto, and the main region MR may include at least one edge other than the edge (for example, side) connected to the bent region BR, and the bent region BR may be bent to form (for example, provide) a curved surface or may be bent in the vertical direction.

[0043] When the main region MR includes at least one edge other than an edge (e.g., a side) connected to a bent surface or a bent region BR that is bent, the display region DA may also be located at the corresponding edge. However, the present disclosure is not limited thereto. In some embodiments, the non-display region NDA may be located in the bent surface or at the bent edge. In some embodiments, both the display region DA and the non-display region NDA may be located in the bent surface or at the bent edge.

[0044] The non-display region NDA of the main region MR may be a region from the outer boundary of the display region DA to the edge of the display panel 10. Signal lines, connection lines, and / or driving circuits configured to apply signals to the display region DA may be located in the non-display region NDA of the main region MR. In addition, a black matrix (e.g., the outermost black matrix) may be located in the non-display region NDA of the main region MR, but the embodiments are not limited thereto.

[0045] The bent region BR is connected to the main region MR. In some embodiments, the bent region BR may be connected to the main region MR at a short side of the main region MR. The display panel 10 may be bent at the bent region BR in a direction opposite to the third direction DR3 (e.g., in a direction opposite to the display surface) with a certain curvature. For example, the display panel 10 may be bent toward the lower surface of the display device 1 at the bent region BR. Since the display panel 10 is bent at the bent region BR, the surface (e.g., a part of the surface) of the display panel 10 may be inverted. In some embodiments, an upward-facing surface (e.g., a part of this surface of the display panel 10) of the display panel 10 may be changed (e.g., bent) to face outward, and then face downward through the bent region BR.

[0046] The sub-region SR extends from the bent region BR. After the bending is completed, the sub-region SR may extend in a direction parallel (e.g., substantially parallel) to the main region MR (e.g., may extend along a plane parallel to the main region MR). The sub-region SR may overlap the main region MR of the display panel 10 in the third direction DR3 (e.g., in the thickness direction). The sub-region SR may overlap the non-display region NDA of the edge of the main region MR and may also overlap the display region DA of the main region MR.

[0047] The driving chip 20 (or the driving chip and the pad portion electrically connected to the driving chip) may be located on the sub-region SR of the display panel 10. The driving chip 20 may generate driving signals to drive the pixels PX and may provide (e.g., output or send) the driving signals to the pixels PX in the display region DA. In some embodiments, the driving chip 20 may generate data signals to determine the light emission intensity of the pixels PX. In some embodiments, the driving chip 20 may provide (e.g., output or send) the data signals to the pixels PX through connection lines and signal lines.

[0048] The driving chip 20 may be attached to the display panel 10 by (e.g., via) an anisotropic conductive film or may be attached to the display panel 10 by (e.g., via) ultrasonic bonding. The width of the driving chip 20 in the second direction DR2 may be smaller than the width of the display panel 10 in the second direction DR2. In some embodiments, the width of the driving chip 20 in the second direction DR2 may be smaller than the width of the sub-region SR in the second direction DR2.

[0049] The driving board 30 may be connected to an end of the sub-region SR of the display panel 10. Pad portions are provided at the ends of the sub-region SR, and the driving board 30 may be connected to the pad portions. The driving board 30 may be a flexible printed circuit board or a flexible film.

[0050] Figure 3 is a cross-sectional view taken along Figure 1 line III-III' in

[0051] Referring to Figure 3 , the display device 1 may include a substrate 110, a thin film transistor layer 200, a detection element layer 300, a light-emitting element layer 400, a first thin film encapsulation film 181 and a second thin film encapsulation film 182, and a sensing layer 600.

[0052] The substrate 110 may be a flexible substrate that can be bent, folded, and / or curled. When the substrate 110 is a flexible substrate, it may include, for example, polyether sulfone (PES), polyacrylate (PA), polyarylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallyl ester, polyimide (PI), polycarbonate (PC), cellulose triacetate (CAT), cellulose acetate propionate (CAP), or any combination thereof.

[0053] The thin film transistor layer 200 may be located on the substrate 110. The thin film transistor layer 200 may include thin film transistors, scan lines, data lines, power lines, scan control lines, and link lines configured to connect pads and data lines (e.g., configured to connect pads to data lines) for each of the plurality of pixels PX. Each of the plurality of thin film transistors may include a gate electrode, a semiconductor layer, a source electrode, and a drain electrode.

[0054] The thin film transistor layer 200 may be located in the display area DA and the non-display area NDA. In some embodiments, the thin film transistors, scan lines, data lines, and power lines for each of the plurality of pixels PX of the thin film transistor layer 200 may be located in the display area DA. In some embodiments, the scan control lines and link lines of the thin film transistor layer 200 may be located in the non-display area NDA.

[0055] The detection element layer 300 may be located on the thin film transistor layer 200. The detection element layer 300 may include a detection element including a first detection electrode, a photosensitive layer, and a second detection electrode. Light reflected or scattered from a user's fingerprint is received by the detection element for detection, and fingerprint recognition may be performed by a transistor for the detection element (e.g., by utilizing the transistor). A more detailed description of the detection element layer 300 will be made below with reference to Figure 5 A more detailed description of the detection element layer 300 will be made herein.

[0056] The first thin film encapsulation film 181 may be located on the detection element layer 300. The first thin film encapsulation film 181 may prevent or reduce the penetration or permeation of oxygen and / or moisture into the detection element layer 300. To this end, the first thin film encapsulation film 181 may include at least one inorganic film. The inorganic film may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and / or an aluminum oxide layer, but the embodiments are not limited thereto. In addition, the first thin film encapsulation film 181 may protect the light emitting element layer 400 from foreign substances (such as dirt and / or dust, for example). To this end, the first thin film encapsulation film 181 may include at least one organic film. The organic film may include an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, and / or the like, but the embodiments are not limited thereto. The first thin film encapsulation film 181 may be located in both the display area DA and the non-display area NDA. In some embodiments, the first thin film encapsulation film 181 and the second thin film encapsulation film 182 may cover the detection element layer 300 in the display area DA and in the non-display area NDA, and may cover the thin film transistor layer 200 in the non-display area NDA.

[0057] The light emitting element layer 400 may be located on the first thin film encapsulation film 181. The light emitting element layer 400 may include a plurality of pixels PX, and each pixel PX may include a first electrode, a light emitting layer, a second electrode, and a bank defining the pixel PX. The light emitting layer may include an organic light emitting layer including an organic material. In some embodiments, the light emitting layer may include a hole transport layer, an organic light emitting layer, and an electron transport layer. When a predetermined or set voltage is applied to the first electrode of the pixel PX through the thin film transistor of the thin film transistor layer 200, and a cathode voltage is applied to the second electrode of the pixel PX, holes and electrons move to the organic light emitting layer through the hole transport layer and the electron transport layer, respectively, and combine in the organic light emitting layer to emit light. The pixels PX of the light emitting element layer 400 may be located in the display area DA. A cross-sectional structure of each of the plurality of pixels PX will be described below with reference to Figure 5 A description of the cross-sectional structure of each of the plurality of pixels PX will be made herein.

[0058] The second thin film encapsulation film 182 may be located on the light emitting element layer 400. The second thin film encapsulation film 182 may prevent or reduce the penetration or permeation of oxygen and / or moisture into the light emitting element layer 400. The second thin film encapsulation film 182 may also protect the light emitting element layer 400 from foreign substances (such as, for example, dirt and / or dust). The second thin film encapsulation film 182 may include the same materials as the first thin film encapsulation film 181 described above, or may include one or more materials selected from a group of materials that may be included in the first thin film encapsulation film 181.

[0059] The second thin film encapsulation film 182 may be located in both the display area DA and the non-display area NDA. In some embodiments, the second thin film encapsulation film 182 may cover the light emitting element layer 400 in the display area DA and in the non-display area NDA.

[0060] The sensing layer 600 may be located (e.g., directly located) on the second thin film encapsulation film 182. In some embodiments, since the sensing layer 600 may be directly located on the second thin film encapsulation film 182, the thickness of the display device 1 may be reduced as compared to a case where a separate sensing panel including the sensing layer 600 is located (e.g., attached) on the second thin film encapsulation film 182.

[0061] The sensing layer 600 may include a plurality of sensing electrodes configured to capacitively sense a touch of a user, and may include routing lines (e.g., a plurality of routing lines) configured to connect pads and the sensing electrodes (e.g., configured to connect the pads to the sensing electrodes). In some embodiments, the sensing layer 600 may sense a touch of a user in a self-capacitance mode or a mutual-capacitance mode.

[0062] The cover window 700 may also be located on the sensing layer 600. The sensing layer 600 and the cover window 700 may be attached to each other through a transparent adhesive member. The cover window 700 will be described in more detail hereinbelow.

[0063] Figure 4 is a plan view of a pixel PX in accordance with an embodiment Figure 1 thereof.

[0064] Referring to Figure 4 , the pixel PX may include a plurality of sub-pixels R, G1, G2, and B, and a detection element may be located between the plurality of sub-pixels R, G1, G2, and B. In some embodiments, a light receiving region RA of the detection element may be located between a plurality of light emitting regions RE, G1E, G2E, and BE of the plurality of sub-pixels R, G1, G2, and B.

[0065] A plurality of sub-pixels R, G1, G2, and B may include a first sub-pixel R that emits light of a first color, a plurality of second sub-pixels G1 and G2 that emit light of a second color, and a third sub-pixel B that emits light of a third color. The plurality of second sub-pixels G1 and G2 may include a second A sub-pixel G1 and a second B sub-pixel G2. A pixel PX may include (e.g., may be defined as) one first sub-pixel R, one second A sub-pixel G1, one second B sub-pixel G2, and one third sub-pixel B.

[0066] A plurality of light-emitting regions RE, G1E, G2E, and BE of the plurality of sub-pixels R, G1, G2, and B may be defined by a second bank 172, which will be described in more detail below. The plurality of light-emitting regions RE, G1E, G2E, and BE of the plurality of sub-pixels R, G1, G2, and B may be regions that emit light through light-emitting elements. The plurality of light-emitting regions RE, G1E, G2E, and BE may include a first light-emitting region RE corresponding to the first sub-pixel R, a second A light-emitting region G1E corresponding to the second A sub-pixel G1, a second B light-emitting region G2E corresponding to the second B sub-pixel G2, and a third light-emitting region BE corresponding to the third sub-pixel B.

[0067] The first light-emitting region RE and the third light-emitting region BE may be alternately arranged on a first row along a first direction DR1. The second A light-emitting region G1E and the second B light-emitting region G2E may be alternately arranged on a second row along the first direction DR1.

[0068] The plurality of light-emitting regions RE, G1E, G2E, and BE of the plurality of sub-pixels R, G1, G2, and B may have different shapes and sizes. Although Figure 4 an embodiment is shown in which the third light-emitting region BE has the largest area and each of the second A light-emitting region G1E and the second B light-emitting region G2E has the smallest area, the embodiment is not limited thereto.

[0069] A light-receiving region RA of a detection element may be located between the plurality of light-emitting regions RE, G1E, G2E, and BE of the plurality of sub-pixels R, G1, G2, and B. The light-receiving region RA may be defined by a first bank 171, which will be described in more detail below. The light-receiving region RA may be a region that receives light emitted from the plurality of light-emitting regions RE, G1E, G2E, and BE and reflected or scattered from a user's fingerprint (e.g., from a finger).

[0070] In a plan view, the light-receiving region RA and the plurality of light-emitting regions RE, G1E, G2E, and BE may be alternately arranged. In an embodiment, as Figure 4As shown, the light receiving region RA can be located between a plurality of light emitting regions RE, G1E, G2E, and BE. For example, in some embodiments, a plurality of light receiving regions RA can be located between each of a plurality of first light emitting regions RE and each of a plurality of third light emitting regions BE, and can also be located between each of a plurality of second A light emitting regions G1E and each of a plurality of second B light emitting regions G2E. In some embodiments, a plurality of light emitting regions RE, G1E, G2E, and BE can be located on one side and the other side of the light receiving region RA (e.g., of each light receiving region RA).

[0071] The plurality of areas of the plurality of light receiving regions RA can be different from the plurality of areas of the plurality of light emitting regions RE, G1E, G2E, and BE. In some embodiments, each of the plurality of areas of the plurality of light receiving regions RA can be larger than each of the plurality of areas of the plurality of light emitting regions RE, G1E, G2E, and BE. In some embodiments, the number of light receiving regions RA can be the same as the number of the plurality of light emitting regions RE, G1E, G2E, and BE. However, the embodiments of the present disclosure are not limited thereto. In some embodiments, the number of light receiving regions RA can be twice or more than twice the number of the plurality of light emitting regions RE, G1E, G2E, and BE.

[0072] Hereinafter, the cross-sectional structure of each of the plurality of detection elements and the cross-sectional structure of each of the plurality of light emitting elements will be described in more detail.

[0073] Figure 5 is a cross-sectional view taken along line V-V' in Figure 4 according to an embodiment. Figure 6 is according to an embodiment Figure 5 of the first optical system 510 in Figure 7 is a cross-sectional view taken along line VII-VII' in Figure 6 according to an embodiment. Figure 8 is according to an embodiment Figure 5 of the second optical system 520 in Figure 9 is a cross-sectional view taken along line IX-IX' in Figure 8 according to an embodiment. Figure 10 is according to an embodiment Figure 5 of the enlarged cross-sectional view of region A in Figure 11 is a cross-sectional view taken along line V-V' in Figure 4 for describing the process of identifying a user's fingerprint according to an embodiment.

[0074] Referring to Figure 5, the display device 1 may include a substrate 110, a transistor TR1 for a light-emitting element, a transistor TR2 for a detection element, a detection element, a light-emitting element, a first optical system 510, and a second optical system 520.

[0075] The substrate 110 may support layers located thereon. The substrate 110 may include an insulating material. The substrate 110 may include an inorganic material (such as, for example, glass, quartz, and / or the like), and / or may include an organic material (such as, for example, polyimide and / or the like). The substrate 110 may be a rigid substrate or a flexible substrate.

[0076] A buffer layer 120 is located on the substrate 110. The buffer layer 120 may prevent or reduce the diffusion of impurity ions, may prevent or reduce the penetration or permeation of moisture, and may perform (e.g., provide) a surface flattening function. The buffer layer 120 may include silicon nitride, silicon oxide, and / or silicon oxynitride.

[0077] A semiconductor layer 210 is located on the buffer layer 120. The semiconductor layer 210 may include channels of a plurality of transistors. In some embodiments, the semiconductor layer 210 may include a first active layer 211 of a transistor TR1 for a light-emitting element and a second active layer 212 of a transistor TR2 for a detection element.

[0078] The first active layer 211 may include a first source region 211a, a first drain region 211b, and a first channel region 211c. The first channel region 211c may be located between the first source region 211a and the first drain region 211b. A first source electrode 231a and a first drain electrode 231b, which will be described in more detail below, may be electrically connected to the first source region 211a and the first drain region 211b, respectively.

[0079] The second active layer 212 may include a second source region 212a, a second drain region 212b, and a second channel region 212c. The second channel region 212c may be located between the second source region 212a and the second drain region 212b. A second source electrode 232a and a second drain electrode 232b, which will be described in more detail below, may be electrically connected to the second source region 212a and the second drain region 212b, respectively.

[0080] The semiconductor layer 210 may include polysilicon. The polysilicon may be formed by crystallizing amorphous silicon. In some embodiments in which the semiconductor layer 210 includes polysilicon, when ions are doped into the semiconductor layer 210, the ion-doped semiconductor layer 210 may have conductivity (e.g., electrical conductivity).

[0081] In some embodiments, the semiconductor layer 210 may include single-crystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor. The oxide semiconductor may include, for example, binary compounds (ABx), ternary compounds (ABxCy), and / or quaternary compounds (ABxCyDz) including indium (In), zinc (Zn), gallium (Ga), tin (Sn), titanium (Ti), aluminum (Al), hafnium (Hf), zirconium (Zr), magnesium (Mg), and / or the like. In some embodiments, the semiconductor layer 210 may include ITZO (oxide including indium, tin, and titanium) and / or IGZO (oxide including indium, gallium, and tin).

[0082] The first insulating layer 130 is located on the semiconductor layer 210. Generally, the first insulating layer 130 may be located above the entire surface of the substrate 110 (for example, being continuous above the entire surface of the substrate 110). The first insulating layer 130 may be a gate insulating film having a gate insulating function. The first insulating layer 130 may include a silicon compound, a metal oxide, and / or the like. In some embodiments, the first insulating layer 130 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, and / or the like. The first insulating layer 130 may be a single film or a multilayer film including stacked films of different materials.

[0083] The first conductive layer 220 is located on the first insulating layer 130. The first conductive layer 220 may include a first gate electrode 221 of the transistor TR1 for the light-emitting element and a second gate electrode 222 of the transistor TR2 for the detecting element.

[0084] The first gate electrode 221 may overlap with the first channel region 211c. In addition, the second gate electrode 222 may overlap with the second channel region 212c.

[0085] The first conductive layer 220 may include one or more metals selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The first conductive layer 220 may be a single film or a multilayer film.

[0086] The second insulating layer 140 may be located on the first conductive layer 220. The second insulating layer 140 may be located above the entire surface of the substrate 110 (e.g., being continuous above the entire surface of the substrate 110). The second insulating layer 140 may insulate the first conductive layer 220 and the second conductive layer 230 (e.g., may insulate the first conductive layer 220 from the second conductive layer 230). The second insulating layer 140 may be an interlayer insulating film. The second insulating layer 140 may include the same material as the first insulating layer 130 described above, or may include one or more materials selected from a group of materials that may be included in the first insulating layer 130.

[0087] The second conductive layer 230 may be located on the second insulating layer 140. The second conductive layer 230 may include a first source electrode 231a and a first drain electrode 231b of a transistor TR1 for a light-emitting element and a second source electrode 232a and a second drain electrode 232b of a transistor TR2 for a detection element.

[0088] The first source electrode 231a may be in contact with the first source region 211a through a contact hole that penetrates the second insulating layer 140 and exposes the first source region 211a. In addition, the first drain electrode 231b may be in contact with the first drain region 211b through a contact hole that penetrates the second insulating layer 140 and exposes the first drain region 211b.

[0089] The second source electrode 232a may be in contact with the second source region 212a through a contact hole that penetrates the second insulating layer 140 and exposes the second source region 212a. In addition, the second drain electrode 232b may be in contact with the second drain region 212b through a contact hole that penetrates the second insulating layer 140 and exposes the second drain region 212b.

[0090] The second conductive layer 230 may include one or more metals selected from aluminum (Al), molybdenum (Mo), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The second conductive layer 230 may be a single film or a multilayer film. For example, the second conductive layer 230 may include a stacked structure of Ti / Al / Ti, Mo / Al / Mo, Mo / AlGe / Mo, Ti / Cu, and / or the like.

[0091] The third insulating layer 160 may be located on the second conductive layer 230. The third insulating layer 160 may be a via layer. The third insulating layer 160 may include an organic insulating material such as, for example, polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, benzocyclobutene (BCB), and / or the like.

[0092] The fourth conductive layer 310 may be located on the third insulating layer 160. The fourth conductive layer 310 may include a connection electrode 315 for a transistor TR1 of a light-emitting element and a first detection electrode 311 for a transistor TR2 of a detection element.

[0093] The connection electrode 315 may be connected to the first drain electrode 231b through a contact hole that penetrates the third insulating layer 160 to expose the first drain electrode 231b. Although Figure 5 an embodiment in which the connection electrode 315 is connected to the first drain electrode 231b is shown, embodiments of the present disclosure are not limited thereto. For example, in some embodiments, the connection electrode 315 may be connected to the first source electrode 231a through a contact hole that penetrates the third insulating layer 160 to expose the first source electrode 231a.

[0094] The connection electrode 315 may connect a first electrode 410 in a light-emitting element, which will be described in more detail below, to the first source electrode 231a or the first drain electrode 231b of the transistor TR1 for the light-emitting element (e.g., connect the first electrode 410 to the first source electrode 231a or the first drain electrode 231b).

[0095] The first detection electrode 311 may be connected to the second drain electrode 232b through a contact hole that penetrates the third insulating layer 160 to expose the second drain electrode 232b. Although Figure 5 an embodiment in which the first detection electrode 311 is connected to the second drain electrode 232b is shown, embodiments of the present disclosure are not limited thereto. For example, in some embodiments, the first detection electrode 311 may be connected to the second source electrode 232a through a contact hole that penetrates the third insulating layer 160 to expose the second source electrode 232a.

[0096] The fourth conductive layer 310 including the first detection electrode 311 may include a reflective electrode so that light incident on the detection element is transmitted without loss. In some embodiments, the fourth conductive layer 310 may include a metal material having a high reflectivity, such as, for example, a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and / or a stacked structure of an APC alloy and ITO (ITO / APC / ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0097] The first bank 171 may be located on the fourth conductive layer 310. The first bank 171 may include an opening that exposes the first detection electrode 311. The opening may define a light-receiving region RA of the detection element.

[0098] The first dam 171 may include an inorganic insulating material (such as, for example, silicon oxide, silicon nitride, silicon oxynitride, hafnium oxide, aluminum oxide, titanium oxide, tantalum oxide, zinc oxide, and / or the like), and / or may include an organic insulating material (such as, for example, polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, benzocyclobutene (BCB), and / or the like). The first dam 171 may be a single film or a multilayer film including stacked films of different materials.

[0099] The photosensitive layer 330 is located in the opening of the first dam 171. The photosensitive layer 330 can absorb and detect light reflected or scattered from a user's fingerprint (e.g., from a finger). In some embodiments, the difference in the amount of light reflected or scattered (and absorbed in the photosensitive layer 330) from the ridges and valleys of a user's fingerprint can be sensed, and the fingerprint can be identified by utilizing the sensed difference. When the photosensitive layer 330 absorbs light, the generated holes and electrons can be respectively transmitted to (e.g., can move to) the first detection electrode 311 and the second detection electrode 340.

[0100] The photosensitive layer 330 may include an organic photosensitive material. For example, the organic photosensitive material may include a dithiolene-based material (BDN) (bis(4-dimethylaminodithiobenzyl)nickel(II)), a benzotriazole-based polymer compound (PTZBTTT-BDT), a porphyrin-based small molecule material (DHTBTEZP), and / or the like, but the embodiments are not limited thereto.

[0101] The electron blocking layer 320 may be located between the photosensitive layer 330 and the first detection electrode 311. The electron blocking layer 320 can block the movement of electrons generated in the photosensitive layer 330 to the first detection electrode 311.

[0102] The second detection electrode 340 may be located on the photosensitive layer 330. The second detection electrode 340 may include a transparent electrode to increase or maximize the transmission of light incident on the detection element. For example, the second detection electrode 340 may include a material layer containing lithium (Li), calcium (Ca), LiF / Ca, LiF / Al, aluminum (Al), magnesium (Mg), silver (Ag), platinum (Pt), palladium (Pd), nickel (Ni), gold (Au), neodymium (Nd), iridium (Ir), chromium (Cr), barium fluoride (BaF), barium (Ba), its compounds or mixtures (such as, for example, a mixture of Ag and Mg or the like), and / or the like. The second detection electrode 340 may further include a transparent metal oxide layer located on the material layer.

[0103] The second detection electrode 340 may include a hole region 340HA. The hole region 340HA of the second detection electrode 340 may pass through the second detection electrode 340 in a third direction DR3 (e.g., in the thickness direction) to provide an opening. The hole region 340HA of the second detection electrode 340 may partially expose one surface (e.g., the upper surface) of the first bank 171 below the second detection electrode 340.

[0104] The hole region 340HA of the second detection electrode 340 may at least partially overlap with the first electrode 410, which will be described in more detail below. Accordingly, the first electrode 410 may contact the connection electrode 315 below it through a contact hole in the hole region 340HA.

[0105] The first detection electrode 311, the electron blocking layer 320, the photosensitive layer 330, and the second detection electrode 340 described above may form (e.g., may constitute) a detection element.

[0106] The first thin film encapsulation film 181 may be located on the second detection electrode 340. Since the first thin film encapsulation film 181 has been described with reference to Figure 3 its redundant description will not be repeated.

[0107] The first optical system 510 may be located on the first thin film encapsulation film 181. One surface (e.g., the lower surface) of the first optical system 510 may be in direct contact with one surface (e.g., the upper surface) of the first thin film encapsulation film 181.

[0108] The first optical system 510 may remove or reduce noise by selectively transmitting the light to be detected in the light provided to the first optical system 510. Accordingly, the signal-to-noise ratio (SNR) of the fingerprint recognition signal of the display device 1 may be improved.

[0109] Therefore, the first optical system 510 may overlap with the detection element in the thickness direction.

[0110] The first optical system 510 will be described with reference to Figure 6 and Figure 7 For convenience of description, in Figure 7 the first thin film encapsulation film 181 and the first passivation film 191 located on one surface (e.g., the lower surface) and the other surface (e.g., the upper surface) of the first optical system 510 are shown together.

[0111] Referring to Figure 6 and Figure 7 the first optical system 510 may include a first optical layer 511 and a first filling layer 512.

[0112] The first optical layer 511 may be located between the first thin film encapsulation film 181 and the first passivation film 191, which will be described in more detail below. The first optical layer 511 may include a plurality of through-holes 511H. The through-holes 511H may pass through the first optical layer 511 in the third direction DR3 (e.g., in the thickness direction) to partially expose the first passivation film 191.

[0113] The through-holes 511H may selectively transmit the light to be detected in the light provided to the first optical layer 511. In some embodiments, the light to be detected in the light provided to the first optical layer 511 may be transmitted through the through-holes 511H of the first optical layer 511, and the transmitted light may be provided to the detection element. Except for the light to be detected, the light provided to the first optical layer 511 may be blocked by the first optical layer 511. Accordingly, since noise can be removed when the detection element receives light, the signal-to-noise ratio (SNR) of the fingerprint recognition signal can be improved. The first optical layer 511 may include a metal material. In addition, the first optical layer 511 may include a black organic pigment.

[0114] The through-holes 511H of the first optical layer 511 may be spaced apart from each other in the first direction DR1 and in the second direction DR2 orthogonal to the first direction DR1 in a plan view. The plurality of through-holes 511H may be arranged in a plurality of matrices or substantially matrix shapes. The through-holes 511H may have a circular shape in a plan view. However, the embodiments of the present disclosure are not limited thereto, and the through-holes 511H may have any suitable shape, such as, for example, an oval shape or a polygonal shape. In some embodiments where the through-holes 511H have an octagonal shape, the noise removal effect may be maximized.

[0115] The first filling layer 512 may be located between the first optical layer 511 and the first thin film encapsulation film 181. The first filling layer 512 may fill the plurality of through-holes 511H of the first optical layer 511. In some embodiments, the first filling layer 512 may be in contact with the inner sidewalls of the through-holes 511H. In addition, the first filling layer 512 may be in contact with the first passivation film 191 exposed by the through-holes 511H of the first optical layer 511. The first filling layer 512 may include a transparent organic material. For example, the first filling layer 512 may include a polymer resin, such as, for example, polyimide, polyurethane, polycarbonate, polypropylene, polyethylene, and / or the like.

[0116] Refer again to Figure 5, a first passivation film 191 may be located on the first optical system 510. The first passivation film 191 may prevent or reduce the penetration or permeation of oxygen and / or moisture into the detection element. The first passivation film 191 may include at least one inorganic film and / or organic film. The inorganic film may include, for example, one or more inorganic materials selected from AlxOy, TiOx, ZrOx, SiOx, AlOxNy, AlxNy, SiOxNy, SixNy, ZnOx, and TaxOy. The organic film may be formed by polymerization of at least one monomer selected from a group consisting of, for example, pentabromophenyl acrylate, 2-(9H-carbazol-9-yl)ethyl methacrylate, N-vinylcarbazole, bis(methacryloylthiophenyl)sulfide, and zirconium acrylate. The organic film may be a planarizing film.

[0117] A light-emitting element including a first electrode 410, a light-emitting layer 420, and a second electrode 430 may be located on the first passivation film 191.

[0118] The first electrode 410 may be located on the first passivation film 191. The first electrode 410 may contact the connection electrode 315 through a contact hole passing through the first passivation film 191, the first thin-film encapsulation film 181, and the first bank 171. In some embodiments, the first electrode 410 may be electrically connected to the first source electrode 231a or the first drain electrode 231b through the connection electrode 315.

[0119] The light-emitting element may be formed in a top-emission manner (e.g., a top-emission structure or arrangement) in which light is emitted in an upward direction (e.g., in the third direction DR3 or toward the cover window 700). In some embodiments, the first electrode 410 may include a metal material having a high reflectivity, such as, for example, a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and / or a stacked structure of an APC alloy and ITO (ITO / APC / ITO). In some embodiments, the first electrode 410 may include the same material as the first detection electrode 311 described above, but the embodiments are not limited thereto.

[0120] A second bank 172 may be located on the first electrode 410. The second bank 172 may include an opening exposing the first electrode 410. The opening may define a plurality of light-emitting regions RE, G1E, G2E, and BE of a plurality of sub-pixels R, G1, G2, and B. For convenience of description, in Figure 5 , only the light-emitting region G1E of the second A sub-pixel G1 is shown among the plurality of light-emitting regions RE, G1E, G2E, and BE of the plurality of sub-pixels R, G1, G2, and B.

[0121] The second bank 172 may include an inorganic insulating material (such as, by way of example, silicon oxide, silicon nitride, silicon oxynitride, hafnium oxide, aluminum oxide, titanium oxide, tantalum oxide, zinc oxide, and / or the like) and / or an organic insulating material (such as, by way of example, polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, benzocyclobutene (BCB), and / or the like). In addition, the second bank 172 may include the same materials as the first bank 171 described above, but the embodiments are not limited thereto.

[0122] The light-emitting layer 420 is located in the opening of the second bank 172. The light-emitting layer 420 may have a structure in which a plurality of layers are stacked. In some embodiments, the light-emitting layer 420 may include a hole transport layer 420a, a light-emitting material layer 420b, and an electron transport layer 420c. The hole transport layer 420a may be located on the first electrode 410, the electron transport layer 420c may be located on the hole transport layer 420a, and the light-emitting material layer 420b may be located between the hole transport layer 420a and the electron transport layer 420c.

[0123] The second electrode 430 may be located on the light-emitting layer 420 and on the second bank 172. The second electrode 430 may be located on the substrate 110 (for example, may be continuous on the substrate 110). The second electrode 430 may include a material layer having a small work function, such as, by way of example, lithium (Li), calcium (Ca), LiF / Ca, LiF / Al, aluminum (Al), magnesium (Mg), silver (Ag), platinum (Pt), palladium (Pd), nickel (Ni), gold (Au), neodymium (Nd), iridium (Ir), chromium (Cr), barium fluoride (BaF), barium (Ba), its compounds or mixtures (such as, a mixture of Ag and Mg or the like) and / or the like. The second electrode 430 may further include a transparent metal oxide layer located on the material layer having a small work function. In addition, the second electrode 430 may include the same materials as the second detection electrode 340 described above, but the embodiments are not limited thereto.

[0124] The second thin film encapsulation film 182 may be located on the second electrode 430. Since the second thin film encapsulation film 182 is described with reference to Figure 3 its redundant description will not be repeated.

[0125] The second optical system 520 may be located on the second thin film encapsulation film 182. One surface (for example, the lower surface) of the second optical system 520 may be in direct contact with one surface (for example, the upper surface) of the second thin film encapsulation film 182.

[0126] The second optical system 520 may remove noise by selectively transmitting light to be detected among the light reflected or scattered from a fingerprint (e.g., from a finger) and received by the second optical system 520. Accordingly, the signal-to-noise ratio (SNR) of the fingerprint recognition signal of the display device 1 may be improved. Therefore, the second optical system 520 may overlap with the photosensitive layer 330.

[0127] In addition, the second optical system 520 may overlap with the first optical system 510. In some embodiments, since the light from which noise is preliminarily removed (e.g., first partially removed) by the second optical system 520 may be provided to the first optical system 510 and the noise may be secondarily removed (e.g., further removed) by the first optical system 510, the signal-to-noise ratio (SNR) may be more effectively improved.

[0128] Reference will be made to Figure 8 and Figure 9 for a more detailed description of the second optical system 520. For convenience of description, in Figure 9 the second thin film encapsulation film 182 and the second passivation film 192 respectively located on one surface (e.g., the lower surface) and the other surface (e.g., the upper surface) of the second optical system 520 are shown together.

[0129] Referring to Figure 8 and 9 the second optical system 520 may include a second optical layer 521 and a second filling layer 522.

[0130] The second optical layer 521 may be located between the second thin film encapsulation film 182 and the second passivation film 192, which will be described below. The second optical layer 521 may include a plurality of through holes 521H. The through holes 521H may pass through the second optical layer 521 in the third direction DR3 (e.g., in the thickness direction) to partially expose the second passivation film 192.

[0131] The through holes 521H may selectively transmit light to be detected among the light reflected or scattered from a fingerprint (e.g., from a finger) and received by the second optical system 520. In some embodiments, the light to be detected among the light reflected or scattered from a fingerprint (e.g., from a finger) and received by the second optical system 520 may be transmitted through the through holes 521H of the second optical layer 521, and the transmitted light may be provided to the detection element. Except for the light to be detected, the light reflected or scattered from a fingerprint (e.g., from a finger) and received by the second optical system 520 may be blocked by the second optical layer 521. Accordingly, as described above, since noise may be removed when the detection element receives light (e.g., before), the signal-to-noise ratio (SNR) of the fingerprint recognition signal may be improved.

[0132] The second optical system 520 may be spaced apart from the plurality of light-emitting regions RE, G1E, G2E, and BE by a predetermined distance or a set distance. The arrangement (e.g., position or orientation) of the second optical system 520 will be described with reference to Figure 10 For the convenience of description, in Figure 10 , only the second A light-emitting region G1E of the second A sub-pixel G1 among the plurality of light-emitting regions RE, G1E, G2E, and BE of the plurality of sub-pixels R, G1, G2, and B is shown.

[0133] With reference to Figure 10 , the second optical system 520 may be spaced apart from the second A light-emitting region G1E in the horizontal direction. In some embodiments, the second A light-emitting region G1E may be defined as the region where the light-emitting layer 420 contacts the first electrode 410 exposed by the opening of the second bank 172.

[0134] A first length d1 by which the second optical system 520 is spaced apart from the second A light-emitting region G1E in the horizontal direction may be less than a second length d2 which is the vertical distance from the upper surface of the first electrode 410 to the lower surface of the second optical system 520. In some embodiments, the upper surface of the first electrode 410 may be the surface where the first electrode 410 contacts the light-emitting layer 420. Further, the lower surface of the second optical system 520 may be the surface where the second optical system 520 contacts the second thin-film encapsulation film 182.

[0135] The first length d1 may vary according to the second length d2 and according to a first angle θ between a straight line connecting the edge of the second A light-emitting region G1E and the edge of the lower surface of the second optical system 520 and a third direction DR3. The first length d1, the second length d2, and the first angle θ satisfy the following Equation 1.

[0136]

Equation 1

[0137] d1 = tanθ * d2

[0138] The first angle θ may be adjusted (e.g., may be determined by or may be based on) considering the light-emitting angle of the light-emitting element, the effective angle at which light is emitted to the outside of the display device to be recognized by the user, and the like. In some embodiments, the first angle θ may be in the range of about 14° to about 20°. For example, in some embodiments, the first angle θ may be about 17°, but the embodiments are not limited thereto.

[0139] In addition, since the description of the second optical layer 521 may be the same as, substantially the same as, or similar to the description of the first optical layer 511 with reference to Figure 6 and Figure 7 , its redundant description will not be repeated.

[0140] The second filling layer 522 may be located between the second optical layer 521 and the second thin film encapsulation film 182. The second filling layer 522 may fill a plurality of through holes 521H of the second optical layer 521. In some embodiments, the second filling layer 522 may be in direct contact with the inner sidewalls of the through holes 521H. In addition, the second filling layer 522 may be in contact with the second passivation film 192 exposed by the through holes 521H of the second optical layer 521.

[0141] In addition, since the description of the second filling layer 522 is the same as, substantially the same as, or similar to the description of the first filling layer 512 with reference to Figure 6 and Figure 7 its redundant description will not be repeated.

[0142] Referring again to Figure 5 , the second passivation film 192 may be located on the second optical system 520. The second passivation film 192 may prevent or reduce the penetration or infiltration of oxygen and / or moisture into the light-emitting element. The second passivation film 192 may include the same material as the first passivation film 191 described above, or may include one or more materials selected from a group of materials that may be included in the first passivation film 191.

[0143] The sensing layer 600 may be located on the second passivation film 192. Since the sensing layer 600 is described with reference to Figure 3 its redundant description will not be repeated.

[0144] The cover window 700 may be located on the sensing layer 600. The cover window 700 may cover and protect the display panel 10.

[0145] The cover window 700 may include a transparent material. The cover window 700 may include, for example, glass and / or plastic. When the cover window 700 includes plastic, the cover window 700 may be flexible.

[0146] Examples of plastics that may be included in the cover window 700 include polyimide, polyacrylate, polymethyl methacrylate (PMMA), polycarbonate (PC), polyethylene naphthalate (PEN), polyvinylidene chloride, polyvinylidene fluoride (PVDF), polystyrene, ethylene vinyl alcohol copolymer, polyethersulfone (PES), polyetherimide (PEI), polyphenylene sulfide (PPS), polyallyl compound, triacetyl cellulose (TAC), cellulose acetate propionate (CAP), and the like. The cover window 700 may include a plastic window, and the plastic window may include one or more of the plastics listed above. When the cover window 700 includes plastic, coatings may also be included on the upper and lower surfaces of the plastic. In some embodiments, the coating may be an organic layer including an acrylate compound and / or a hard coating including an organic-inorganic composite layer.

[0147] The cover window 700 and the display panel 10 can be coupled to each other through an adhesive member. The adhesive member can be an optically transparent adhesive film (OCA) or an optically transparent resin (OCR).

[0148] Hereinafter, refer to Figure 11 the process of identifying the fingerprint of a user is described.

[0149] An object to be biometrically identified (e.g., a user's finger) is placed on the cover window 700 of the display device 1, and light L1 is emitted from a light-emitting element (e.g., from the light-emitting material layer 420b). The light L1 emitted from the light-emitting element (e.g., from the light-emitting material layer 420b) can be emitted to (e.g., can travel to) the fingerprint portion of the user's finger to be reflected or scattered from the fingerprint surface of the user's finger.

[0150] The light L2 reflected or scattered from the user's fingerprint (e.g., from the finger) can enter the cover window 700 and can be provided to the second optical system 520. As described above, the second optical system 520 can preliminarily remove noise by selectively transmitting the light to be detected among the light L2 received by the second optical system 520 and reflected or scattered from the user's fingerprint (e.g., from the finger).

[0151] The light L3 passing through the second optical system 520 can pass through (e.g., can sequentially pass through) the second thin film encapsulation film 182, the second electrode 430, the second bank 172, and the first passivation film 191, and can be provided to the first optical system 510. As described above, the first optical system 510 can secondarily remove noise by selectively transmitting the light to be detected among the light L3 provided to the second optical system 520.

[0152] The light L4 passing through the first optical system 510 can be provided to the detection element by passing through the first thin film encapsulation film 181. In some embodiments, the light L4 passing through the first optical system 510 can be received by the photosensitive layer 330 for detection. The holes generated by the photosensitive layer 330 can be transmitted to the first detection electrode 311, and fingerprint recognition can be performed through the transistor TR2 for the detection element.

[0153] As described above, the display device 1 can identify the biometric information of a user by using (e.g., by utilizing) the light-emitting element of the pixel PX. In some embodiments, since no additional light source for biometric identification is required, the process of forming the above (e.g., the process of forming an additional light source) can be omitted to ensure process economy (e.g., to reduce manufacturing costs). In addition, the mixing of the colors of the pixels PX and the reduction of the light amount caused by the additional light source can be prevented, reduced, or minimized to improve the display quality of the display device 1.

[0154] In addition, the first optical system 510 and the second optical system 520 may remove noise by selectively transmitting the light to be detected among the received light. In some embodiments, since the light preliminarily denoised by the second optical system 520 may be provided to the first optical system 510 and may be denoised secondarily by the first optical system 510, the signal-to-noise ratio (SNR) may be improved.

[0155] The display device according to some embodiments may identify biometric information of a user by using (e.g., by utilizing) a light-emitting element of a pixel. In some embodiments, since an additional light source for biometric identification is not required, a process of forming the additional light source may be omitted to ensure process economy (e.g., to reduce manufacturing costs). In addition, mixing of colors of the pixels and reduction of the amount of light caused by the additional light source may be prevented, reduced, or minimized to improve the display quality of the display device.

[0156] In addition, since the first optical system and the second optical system are located on the detection element, noise received by the detection element during light reception may be removed or reduced to improve the signal-to-noise ratio (SNR).

[0157] Aspects and effects according to some embodiments of the present disclosure are not limited to the above, and other aspects and effects are included in this specification.

[0158] At the end of the detailed description, it will be apparent to those of ordinary skill in the art that many changes and modifications can be made to the disclosed embodiments substantially without departing from the principles of the present disclosure. Therefore, the disclosed embodiments of the present disclosure are used only in a general and descriptive sense and not for the purpose of limitation.

Claims

1. A display device, comprising: a first substrate; a first detection electrode, the first detection electrode being located on the first substrate; a first bank, the first bank including an opening exposing the first detection electrode; a photosensitive layer, the photosensitive layer being located on the first detection electrode; a second detection electrode, the second detection electrode being located on the photosensitive layer; a first electrode, the first electrode being located on the second detection electrode; a second bank, the second bank including an opening exposing the first electrode; a light-emitting layer, the light-emitting layer being located on the first electrode; a second electrode, the second electrode being located on the light-emitting layer; a first optical system, the first optical system being located between the second detection electrode and the first electrode; and a second optical system, the second optical system being located on the second electrode, wherein the first optical system and the second optical system overlap with the photosensitive layer in the thickness direction of the display device, wherein the opening of the second bank does not overlap with the opening of the first bank in the thickness direction of the display device, and wherein the light-emitting layer does not overlap with the photosensitive layer in the thickness direction of the display device.

2. The display device according to claim 1, wherein, the first optical system includes: a first optical layer, the first optical layer including a plurality of through holes; and a first filling layer, the first filling layer filling the plurality of through holes of the first optical layer.

3. The display device according to claim 2, wherein, the first optical layer includes a metal material, and the first filling layer includes a transparent organic material.

4. The display device according to claim 1, wherein, the second optical system does not overlap with the first electrode in the thickness direction of the display device.

5. The display device according to claim 1, wherein, the width of the first optical system in a first direction is greater than the width of the first detection electrode in the first direction.

6. The display device according to claim 1, wherein, the second detection electrode includes: a hole region, the hole region passing through the second detection electrode in the thickness direction of the display device, and the hole region exposing the first bank.

7. The display device according to claim 6, wherein, the hole region at least partially overlaps with the first electrode.

8. The display device according to claim 6, further comprising: a first source electrode and a first drain electrode, the first source electrode and the first drain electrode being located on the first substrate, wherein the first electrode is electrically connected to the first source electrode or the first drain electrode through a contact hole passing through the first bank.

9. The display device according to claim 8, wherein, the contact hole is located in the hole region.

10. The display device according to claim 8, further comprising: a second source electrode and a second drain electrode, the second source electrode and the second drain electrode being located on the same layer as the first source electrode, wherein the first detection electrode is electrically connected to the second source electrode or the second drain electrode.

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