Plasma processing equipment and mounting platform

Abstract

The present invention provides a mounting table and a plasma processing apparatus. A mounting table is provided that improves the in-plane uniformity of substrate temperature. The mounting table includes: a mounting surface for mounting a substrate; an electrode disposed below the mounting surface for applying bias power; a power supply line disposed below the electrode for applying bias power; and a power supply terminal electrically connecting the electrode and the power supply line, wherein the area of the surface of the power supply terminal connected to the electrode is larger than the area of the surface connected to the power supply line.

Description

Technical Field

[0001] The present disclosure relates to a mounting table and a plasma processing apparatus. Background Art

[0002] In some cases, an electrostatic chuck and an edge ring (also called a focus ring) are installed on the mounting surface of a plasma processing apparatus, and an adsorption electrode, a bias application electrode, a heater, etc. are embedded in the electrostatic chuck and edge ring. For example, Patent Document 1 discloses a cylindrical contact structure that serves as a power supply terminal connected to the electrode.

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 2018-110216 Summary of the Invention

[0004] Problems to be solved by the invention

[0005] The current flowing through the power supply terminals generates heat at the contact portion, and under this influence, the temperature of the substrate may become uneven.

[0006] The present disclosure provides a technology capable of improving the in-plane uniformity of substrate temperature.

[0007] Solutions for solving problems

[0008] According to a technical solution of the present disclosure, a loading platform is provided, which has: a loading surface for loading a substrate; an electrode, which is arranged below the loading surface and is used to apply bias power; a power supply line, which is arranged below the electrode and is used to apply bias power; and a power supply terminal, which electrically connects the electrode and the power supply line, and the area of the surface of the power supply terminal connected to the electrode is larger than the area of the surface connected to the power supply line.

[0009] Effects of the Invention

[0010] According to one embodiment, the in-plane uniformity of the substrate temperature can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 FIG. 1 is a schematic cross-sectional view showing an example of a plasma processing apparatus according to an embodiment.

[0012] Figure 2 This is a diagram showing an example of the structure of a mounting table according to one embodiment.

[0013] Figure 3 This is a diagram showing an example of connection between each electrode of the mounting table and a power supply according to one embodiment.

[0014] Figure 4This is a diagram showing an example of an electrode contact according to an embodiment.

[0015] Figure 5 This is a diagram showing another example of the electrode contact according to one embodiment.

[0016] Figure 6 These are views showing an AA cross section, a BB cross section, and a CC cross section of a mounting table according to one embodiment. DETAILED DESCRIPTION

[0017] Hereinafter, the embodiment of the present disclosure will be described with reference to the accompanying drawings. In each of the drawings, the same components are denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0018] [Plasma processing equipment]

[0019] Figure 1 This is a diagram schematically showing a plasma processing apparatus 1 according to one embodiment. Figure 1 The plasma processing apparatus 1 shown is a capacitive coupling type apparatus. The plasma processing apparatus 1 has a chamber 10. The chamber 10 provides an inner space 10s therein.

[0020] The chamber 10 includes a chamber body 12. The chamber body 12 has a generally cylindrical shape. An internal space 10s is provided inside the chamber body 12. The chamber body 12 is formed, for example, from aluminum. A corrosion-resistant film is provided on the inner wall surface of the chamber body 12. The corrosion-resistant film may be formed from a ceramic such as aluminum oxide or yttrium oxide.

[0021] A passage 12p is formed in the sidewall of the chamber body 12. Substrates W pass through the passage 12p when being transported between the interior space 10s and the outside of the chamber 10. The passage 12p can be opened and closed by a gate valve 12g provided along the sidewall of the chamber body 12.

[0022] A support portion 13 is provided at the bottom of the chamber body 12. The support portion 13 is formed of an insulating material. The support portion 13 has a generally cylindrical shape. The support portion 13 extends upward from the bottom of the chamber body 12 within the internal space 10s. A member 15 is provided on the support portion 13. The member 15 can be formed of an insulator such as quartz. The member 15 can be a ring-shaped plate.

[0023] The plasma processing apparatus 1 further includes a substrate mounting table, namely, a mounting table 14 according to an exemplary embodiment. The mounting table 14 is supported by the support portion 13. The mounting table 14 is disposed within the internal space 10s. The mounting table 14 is configured to support the substrate W within the chamber 10, namely, within the internal space 10s.

[0024] The mounting table 14 has a lower electrode 18 and an electrostatic chuck 20 involved in an exemplary embodiment. The mounting table 14 may further have an electrode plate 16. The electrode plate 16 is formed of a conductor such as aluminum and has a roughly disc shape. The lower electrode 18 is provided on the electrode plate 16. The lower electrode 18 is formed of a conductor such as aluminum (Al) or titanium (Ti) and has a roughly disc shape. The lower electrode 18 is electrically connected to the electrode plate 16. The outer peripheral surface of the lower electrode 18 and the outer peripheral surface of the electrode plate 16 are surrounded by the support portion 13. The electrode plate 16 and the lower electrode 18 are an example of a base supporting the electrostatic chuck 20.

[0025] The electrostatic chuck 20 is provided on the lower electrode 18. The edge of the electrostatic chuck 20 and the edge ring 26 are surrounded by the member 15. The electrostatic chuck 20 supports the substrate W and the edge ring 26 according to one exemplary embodiment.

[0026] The substrate W, for example, has a disc shape and is placed on the electrostatic chuck 20. An edge ring 26 is mounted on the electrostatic chuck 20 so as to surround the edge of the substrate W. The outer edge of the edge ring 26 may extend above the member 15. The edge ring 26 is a ring-shaped member. While not limited to this material, the edge ring 26 may be formed of silicon, silicon carbide, or quartz. The edge ring 26 is also referred to as a focus ring.

[0027] A flow path 18f is provided within the lower electrode 18. A heat exchange medium (e.g., a refrigerant) is supplied to the flow path 18f via a pipe 22a from a cooling unit 22 located outside the chamber 10. The heat exchange medium supplied to the flow path 18f is returned to the cooling unit 22 via a pipe 22b. In the plasma processing apparatus 1, the temperature of the substrate W placed on the electrostatic chuck 20 is adjusted by heat exchange between the heat exchange medium and the lower electrode 18.

[0028] The plasma processing apparatus 1 is provided with a gas supply line 24. The gas supply line 24 supplies a heat transfer gas (eg, He gas) from a heat transfer gas supply mechanism to a space between the upper surface of the electrostatic chuck 20 and the lower surface of the substrate W.

[0029] The plasma processing apparatus 1 further includes an upper electrode 30 . The upper electrode 30 is disposed above the mounting table 14 . The upper electrode 30 is supported on the upper portion of the chamber body 12 by a member 32 . The member 32 is formed of an insulating material. The upper electrode 30 and the member 32 close the upper opening of the chamber body 12 .

[0030] The upper electrode 30 may include a top plate 34 and a support 36. The lower surface of the top plate 34 is located on the side of the internal space 10s and defines the internal space 10s. The top plate 34 may be formed of a low-resistance conductor or semiconductor that generates less Joule heat. A plurality of gas ejection holes 34a are formed in the top plate 34. The plurality of gas ejection holes 34a extend through the top plate 34 along its thickness.

[0031] The support body 36 supports the top plate 34 so that it can be attached and detached. The support body 36 is formed from a conductive material such as aluminum. A gas diffusion chamber 36a is provided within the support body 36. The support body 36 is formed with a plurality of gas holes 36b. The plurality of gas holes 36b extend downward from the gas diffusion chamber 36a. The plurality of gas holes 36b are connected to the plurality of gas ejection holes 34a. A gas inlet 36c is formed in the support body 36. The gas inlet 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas inlet 36c.

[0032] The gas supply unit GS is connected to the gas supply pipe 38. The gas supply unit GS includes a gas source group 40, a valve group 41, a flow controller group 42 and a valve group 43. The gas source group 40 is connected to the gas supply pipe 38 via the valve group 41, the flow controller group 42 and the valve group 43. The gas source group 40 includes a plurality of gas sources. The valve group 41 and the valve group 43 each include a plurality of on-off valves. The flow controller group 42 includes a plurality of flow controllers. The plurality of flow controllers of the flow controller group 42 are respectively mass flow controllers or pressure-controlled flow controllers. The plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 via the corresponding on-off valves of the valve group 41, the corresponding flow controllers of the flow controller group 42 and the corresponding on-off valves of the valve group 43.

[0033] The plasma processing apparatus 1 includes a detachably mounted shield 46 along the inner wall of the chamber body 12. The shield 46 is also provided on the outer periphery of the support portion 13. The shield 46 prevents reaction products such as etching byproducts from adhering to the chamber body 12. The shield 46 is constructed, for example, by forming a corrosion-resistant film on the surface of an aluminum member. The corrosion-resistant film may be formed of a ceramic such as yttrium oxide.

[0034] A baffle 48 is provided between the support portion 13 and the sidewall of the chamber body 12. The baffle 48 is constructed, for example, by forming a corrosion-resistant film on the surface of an aluminum member. The corrosion-resistant film can be formed of a ceramic such as yttrium oxide. Multiple through-holes are formed in the baffle 48. An exhaust port 12e is provided below the baffle 48 at the bottom of the chamber body 12. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52. The exhaust device 50 includes a pressure regulating valve and a vacuum pump such as a turbomolecular pump.

[0035] The plasma processing apparatus 1 includes a first high-frequency power source 61 for applying high-frequency (HF) power for plasma generation. The first high-frequency power source 61 is configured to generate high-frequency (HF) power to generate plasma from gas in the chamber 10. The frequency of the high-frequency (HF) power is, for example, within a range of 27 MHz to 100 MHz.

[0036] The first high-frequency power supply 61 is electrically connected to the lower electrode 18 via a matching box 63. The matching box 63 includes a matching circuit. The matching circuit of the matching box 63 is configured to match the impedance of the load side (lower electrode side) of the first high-frequency power supply 61 with the output impedance of the first high-frequency power supply 61. In other embodiments, the first high-frequency power supply 61 may also be electrically connected to the upper electrode 30 via the matching box 63.

[0037] The plasma processing apparatus 1 may further include a second high-frequency power supply 62 for applying high-frequency LF power for ion attraction. The second high-frequency power supply 62 is configured to generate high-frequency LF power. The high-frequency LF has a frequency primarily suitable for attracting ions toward the substrate W, for example, within the range of 400 kHz to 13.56 MHz. Alternatively, the high-frequency LF may be a pulsed voltage having a rectangular waveform.

[0038] The second high-frequency power supply 62 is electrically connected to the bias electrode 21 in the electrostatic chuck 20, which is connected to the power supply line 102, via a matching unit 64. The matching unit 64 includes a matching circuit. The matching circuit of the matching unit 64 is configured to match the impedance of the load side (lower electrode side) of the second high-frequency power supply 62 with the output impedance of the second high-frequency power supply 62.

[0039] The plasma processing apparatus 1 may further include a control unit 80. The control unit 80 may be a computer including a storage unit such as a processor and a memory, an input device, a display device, a signal input / output interface, and the like. The control unit 80 controls the various components of the plasma processing apparatus 1. In the control unit 80, an operator can use the input device to input commands, etc., thereby managing the plasma processing apparatus 1. In addition, the control unit 80 can use the display device to visually display the operating status of the plasma processing apparatus 1. Furthermore, the storage unit of the control unit 80 stores a control program and process data. The control program is executed by the processor of the control unit 80, so that the plasma processing apparatus 1 performs various processes. The processor of the control unit 80 executes the control program and controls the various components of the plasma processing apparatus 1 according to the process data, so that the plasma processing apparatus 1 performs various programs, such as a plasma processing method.

[0040] [Loading platform]

[0041] Hereinafter, the mounting table 14 according to one embodiment will be described in detail. Figure 1 Refer to it together Figure 2 and Figure 3 . Figure 2 This is a diagram showing an example of the structure of the mounting table 14 according to one embodiment. Figure 3 1 is a diagram showing an example of connection between each electrode of the mounting table 14 and a power supply according to one embodiment.

[0042] The electrostatic chuck 20 has a main body, such as Figure 2 As shown, it includes a first region and a second region. The main body of the electrostatic chuck 20 has a stepped shape on the outer periphery and is formed of a dielectric material such as aluminum oxide (Al2O3) or aluminum nitride (AlN).

[0043] The first region is a substantially disk-shaped region having a first mounting surface 201 for mounting a substrate W. The first region is configured to hold the substrate W mounted on the first mounting surface 201. The diameter of the first region is smaller than the diameter of the substrate W.

[0044] The second region is a ring-shaped region. The second region and the first region share a central axis ( Figure 2 The second region has a second mounting surface 202. The second region is configured to be integrally provided with the periphery of the first region and to support the edge ring 26 mounted on the second mounting surface 202 (see FIG. Figure 1 ).

[0045] The dielectric material constituting the first region and the dielectric material constituting the second region can be the same. For example, the main body of the electrostatic chuck 20 can be formed of a ceramic such as alumina or aluminum nitride. The electrostatic chuck 20 has a first mounting surface 201 and a second mounting surface 202 as mounting surfaces. The second mounting surface 202 of the second region is lower than the first mounting surface 201 of the first region, and the thickness of the first region is greater than that of the second region.

[0046] The electrostatic chuck 20 further includes an adsorption electrode 23. The adsorption electrode 23 is provided in the first region of the main body. The adsorption electrode 23 is connected to a DC power supply 20p (see FIG. 20 ) via a switch 20s. Figure 1 and Figure 2 When a DC voltage is applied from the DC power supply 20p to the adsorption electrode 23, an electrostatic attraction is generated between the first region of the main body and the substrate W. Under the action of the generated electrostatic attraction, the substrate W is attracted to the first region of the main body and is held by the first region.

[0047] The electrostatic chuck 20 further includes an adsorption electrode 27a and an adsorption electrode 27b (hereinafter collectively referred to as the adsorption electrode 27). The adsorption electrode 27a and the adsorption electrode 27b are provided in the second region of the main body. The adsorption electrode 27a and the adsorption electrode 27b extend circumferentially relative to the central axis of the electrostatic chuck 20. The adsorption electrode 27b is provided outside the adsorption electrode 27a. Figure 2 As shown, a DC power supply 20m is electrically connected to the adsorption electrode 27a via a switch 20n, and a DC power supply 20r is electrically connected to the adsorption electrode 27b via a switch 20t. DC voltages are applied from the DC power supplies 20m and 20r to the adsorption electrodes 27a and 27b, respectively, to generate a potential difference between the adsorption electrodes 27a and 27b. For example, the polarity of the DC voltage applied from the DC power supply 20m to the adsorption electrode 27a can be opposite to the polarity of the DC voltage applied from the DC power supply 20r to the adsorption electrode 27b. However, the adsorption electrode 27 is not limited to a bipolar electrode and can also be a unipolar electrode. When DC voltages are applied from the DC power supplies 20m and 20r to the adsorption electrodes 27a and 27b, respectively, an electrostatic attraction is generated between the second region of the main body and the edge ring 26. Due to this electrostatic attraction, the edge ring 26 is attracted to the second region of the main body and retained by the second region.

[0048] like Figure 3 As shown, the bias electrode 21 is provided below the first placement surface 201 and below the adsorption electrode 23. The bias electrode 25 is provided below the second placement surface 202 and below the adsorption electrodes 27a and 27b. The third high-frequency power supply 65 is electrically connected to the bias electrode 25 connected to the power supply line 112 via the matching unit 66 (see FIG. 1 ). Figure 1 and Figure 2 The matching unit 66 includes a matching circuit. The matching circuit of the matching unit 66 is configured to match the impedance of the load side (lower electrode side) of the third high-frequency power supply 65 with the output impedance of the third high-frequency power supply 65 .

[0049] The bias electrodes 21 and 25 are used to apply bias power for ion attraction. The bias power is applied using a DC voltage or a high frequency voltage. Figure 1 and Figure 2 In the example shown, bias electrode 25 applies bias power using high-frequency power from third high-frequency power supply 65. However, this is not limiting; bias power may also be applied using a DC voltage from a DC power supply. Applying bias power to bias electrode 21 attracts ions in the plasma toward the first region of the main body. This allows control of process characteristics such as the etching rate and film formation rate across the entire surface of substrate W. Applying bias power to bias electrode 25 attracts ions in the plasma toward the second region of the main body. This allows control of process characteristics in the edge region of substrate W.

[0050] The bias electrode 21 and the bias electrode 25 are examples of electrodes for applying bias power, disposed below the mounting surface of the electrostatic chuck 20. The bias electrode 21 is an example of a first electrode disposed below the first mounting surface 201, and the bias electrode 25 is an example of a second electrode disposed below the second mounting surface 202. The bias power applied to the bias electrode 21 and the bias electrode 25 is independently controlled by the second high-frequency power supply 62 and the third high-frequency power supply 65, respectively. The electrode that applies the bias power may be at least one of the bias electrode 21 and the bias electrode 25.

[0051] The adsorption electrode 23 in the first region is disposed between the first mounting surface 201 and the bias electrode 21. The adsorption electrode 23 and the bias electrode 21 have disk shapes with approximately the same diameter. The adsorption electrodes 27a and 27b in the second region are disposed between the second mounting surface 202 and the bias electrode 25. The adsorption electrodes 27a, 27b, and the bias electrode 21 have an annular shape. The radial widths of the adsorption electrodes 27a and 27b are approximately the same length, while the radial width of the bias electrode 21 is greater than the combined radial widths of the adsorption electrodes 27a and 27b. The adsorption electrodes 23, 27a, and 27b are examples of electrostatic adsorption electrodes disposed between the mounting surface of the electrostatic chuck 20 and the electrode that applies bias power. The electrostatic adsorption electrode may be at least one of the adsorption electrode 23 and the adsorption electrode 27. This allows electrostatic adsorption of at least one of the substrate W and the edge ring 26. In addition, the electrode for applying bias power and the electrode for electrostatic attraction are arranged inside the same dielectric.

[0052] The bias electrode 21 and the attraction electrodes 27 a and 27 b are arranged on the same surface of the electrostatic chuck 20 . Figure 2 The thickness D1 from the first mounting surface 201 to the upper surface of the bias electrode 21 is equal to the thickness D2 from the second mounting surface 202 to the upper surface of the bias electrode 25 .

[0053] When high-frequency LF is applied to the electrode plate 16, a potential difference is generated between the electrode plate 16 and the substrate W, and between the electrode plate 16 and the edge ring 26, due to the electrostatic capacitance between the electrode plate 16 and the substrate W, and between the electrode plate 16 and the edge ring 26. This causes ionization in the heat transfer gas supplied to the back surface of the substrate W and the back surface of the edge ring 26. As a result, abnormal discharge may occur on the back surface of the substrate W and / or the back surface of the edge ring 26. Therefore, in the mounting table 14 according to this embodiment, the bias electrode 21 and the bias electrode 25 are disposed within the electrostatic chuck 20 to suppress discharge of the heat transfer gas. This allows high-power high-frequency LF to be applied to the bias electrode 21 and the bias electrode 25.

[0054] [Contact pin]

[0055] like Figure 2 As shown, the mounting table 14 has a contact pin 100 that electrically connects the bias electrode 21 and a power supply line 102 for applying bias power, which is arranged below the bias electrode 21. The contact pin 100 has a conical shape, and the area of the upper surface 100a connected to the bias electrode 21 is larger than the area of the lower surface 100b connected to the power supply line 102. The contact pin 100 is formed of a conductive material. The contact pin 100 can be formed of, for example, conductive ceramics. The power supply line 102 includes a metal terminal 103 at the top end, and the contact pin 100 connects the bias electrode 21 to the metal terminal 103 formed of a metal material such as copper (Cu) or titanium (Ti). As a result, the power supply line 102 is provided inside the mounting table 14, and the power supply line 102 (metal terminal 103) can be exposed on the lower surface of the mounting table 14 (the lower surface 182 of the lower electrode 18). As a result, the high frequency LF power from the second high frequency power source 62 is applied to the bias electrode 21 via the power supply line 102 (metal terminal 103 ) and the contact pin 100 .

[0056] In addition, the mounting table 14 has a contact pin 110 that electrically connects the bias electrode 25 and a power supply line 112 for applying bias power, which is arranged below the bias electrode 25. The contact pin 110 has a conical shape, and the area of the upper surface 110a connected to the bias electrode 25 is larger than the area of the lower surface 110b connected to the power supply line 112. The contact pin 110 is formed of a conductive material. The contact pin 110 can be formed of, for example, conductive ceramics. The power supply line 112 includes a metal terminal 113 at the top end, and the contact pin 110 connects the bias electrode 25 and the metal terminal 113 formed of a metal material. Thus, the power supply line 112 is arranged inside the mounting table 14, and the power supply line 112 (metal terminal 113) can be exposed on the lower surface of the mounting table 14 (the lower surface 182 of the lower electrode 18). As a result, high-frequency power from the third high-frequency power supply 65 is applied to the bias electrode 25 via the power supply line 112 (metal terminal 113 ) and the contact pin 110 .

[0057] Furthermore, the contact pins 100 and 110 are examples of power supply terminals that electrically connect an electrode for applying bias power and a power supply line.

[0058] On one side and Figure 4 Compared with the shape of the conventional contact pin 300 shown in (a), Figure 4 The features of the contact pin 100 according to the present embodiment are shown in (b). The contact pin 110 has the same features as those of the contact pin 100, and therefore, description thereof will be omitted.

[0059] Conventional contact pins 300 have a cylindrical shape, with the area S1 of their upper surface 300a being equal to the area S2 of their lower surface 300b. When biasing high-frequency (LF) power is supplied from the second high-frequency power supply 62, a relatively large current flows through the contact pins 300 for a short period of time. This generates Joule heat, causing the contact pins 300 to heat up. As a result, the temperature of the area of the substrate W above the contact pins 300 corresponding to the contact pins 300 may become higher than that of other areas, making it impossible to uniformly control the in-plane temperature distribution of the substrate W.

[0060] In order to solve this problem, the contact pin 100 according to this embodiment has a tapered shape. Figure 4 As shown in (b), the area S1 of the upper surface 100a is larger than the area S2 of the lower surface 100b. Thus, by increasing the area S1 of the upper surface 100a of the contact pin 100, the resistance of the upper surface 100a is reduced, and the heat generation of the contact pin 100 can be reduced.

[0061] Furthermore, by reducing the area S2 of the lower surface 100b of the contact pin 100, the diameter of the through hole through which the metal terminal 103 passes through the lower electrode 18 can be reduced. That is, the contact pin 100 is formed of a conductive material. Therefore, it is necessary to insulate it from the metal lower electrode 18. Therefore, sleeves 101 and 111 formed of an insulating material are inserted into the through hole of the lower electrode 18. If the diameter of the through hole is large, the center axis ( Figure 2 The distance P between the axis AX in the contact pin 100 and the upper end of the sleeve 101 increases. If distance P increases, a circular insulating material with a diameter of 2P is exposed on the upper surface 181 of the lower electrode 18. This makes it difficult to control the temperature of the insulating material, such as ceramic, during cooling of the flow path 18f. As described above, reducing the area S2 of the lower surface 100b of the contact pin 100 prevents uneven temperature distribution in the upper portion of the through-hole of the electrostatic chuck 20. This minimizes the area of insulating material exposed on the upper surface 181 of the lower electrode 18, improving the in-plane uniformity of the substrate temperature.

[0062] In particular, due to the discharge phenomenon between the bias electrode 21 and the generated plasma, a relatively large current of several to 10 amperes momentarily flows through the bias electrode 21. During plasma processing, an alternating current flows through the bias electrode 21, and the alternating current is repeatedly turned on and off according to the frequency of the high frequency (LF). When the alternating current is turned off or on, the relatively large current momentarily flows, periodically generating Joule heat and heating the contact pin 300.

[0063] On the other hand, a direct current flows through the adsorption electrode 23 and the adsorption electrodes 27a and 27b, but no current larger than the high-frequency current flowing through the bias electrode 21 flows. Therefore, the contact pins 100 and 110 according to this embodiment are particularly preferably used as power supply terminals for the bias electrode 21, and do not need to be used as power supply terminals for the adsorption electrode 23 and the adsorption electrodes 27a and 27b.

[0064] Furthermore, the contact pins 100, 110 are not limited to the tapered shape. Figure 4 As shown in (c), contact pins 100 and 110 can also have a stepped structure on their side surfaces. This also makes the area S1 of the upper surface 100a larger than the area S2 of the lower surface 100b. By increasing the area S1 of the upper surface 100a of the contact pin 100, the resistance of the upper surface 100a is reduced, thereby reducing the heat generated by the contact pin 100. The same applies to the contact pin 110.

[0065] In addition, if Figure 5As shown, a metal plate 104 can also be interposed between the contact pin 100 and the metal terminal 103. The metal plate 104 is formed of a conductive material such as aluminum. In this case, the metal plate 104 is bonded (brazed) to the lower surface of the contact pin 100 using a conductive adhesive, and the metal terminal 103 is pressed against the metal plate 104. The same applies to the contact pin 110.

[0066] exist Figure 4 In the contact structure, the metal terminal 103 is directly pressed against the lower surface 100b of the contact pin 100. As a result, the contact resistance at the interface between the contact pin 100 and the metal terminal 103 becomes large. Figure 5 In the contact structure of FIG, the contact pin 100 and the metal terminal 103 are in contact with each other via the metal plate 104. This can reduce the contact resistance of the contact pin 100 and reduce the heat generated by the contact pin 100.

[0067] [Each electrode]

[0068] Next, refer to Figure 6 Each electrode embedded in the electrostatic chuck 20 will be described. Figure 6 (a) means Figure 2 FIG. 2 is a diagram of a cross section taken along line AA of the electrostatic chuck 20 shown. Figure 6 (b) means Figure 2 FIG. 2 is a diagram of a cross section taken along line BB of the electrostatic chuck 20 shown. Figure 6 (c) means Figure 2 FIG. 2 is a diagram of a CC cross section of the electrostatic chuck 20 shown.

[0069] Reference Figure 6 In the AA section of (a), a disk-shaped adsorption electrode 23 is provided in the first region. The adsorption electrode 23 is a film-shaped or sheet-shaped electrode.

[0070] Reference Figure 6 In the BB section of (b), annular adsorption electrodes 27a and 27b are provided in the second region. Both the adsorption electrode 27a and the adsorption electrode 27b are film-shaped or sheet-shaped electrodes. The adsorption electrode 27b is provided outside the adsorption electrode 27a.

[0071] Furthermore, a disc-shaped bias electrode 21 is provided in the first region. The bias electrode 21 is in the form of a sheet or a mesh and is made of conductive ceramics, which includes ceramics and metals used in the electrostatic chuck 20 .

[0072] The material used for bias electrode 21 is not limited to this. It can also be a conductive ceramic made by combining a high-melting-point metal such as tungsten, tantalum, or molybdenum with the ceramic that constitutes electrostatic chuck 20. Bias electrode 21 can have a resistance value of a predetermined value (e.g., 0.1 Ω·cm) or less. Bias electrode 21 contacts contact pin 100 at its center.

[0073] Reference Figure 6 In the CC cross section of (c), an annular bias electrode 25 is provided in the second region. The bias electrode 25 is a film-shaped or sheet-shaped electrode. Power supply terminals 25a are evenly spaced along the circumference of the bias electrode 25. The power supply terminals 25a are connected to the contact pins 110. As a result, the contact pins 110 connected to the bias electrode 25 are evenly spaced along the circumference of the edge ring 26. As a result, the impedance of the high frequency LF can be uniformed in the circumferential direction, reducing circumferential variations in the high frequency LF.

[0074] The bias electrode 25 is in a sheet or mesh shape and is formed of conductive ceramics including the ceramics and metals used in the electrostatic chuck 20 .

[0075] The bias electrode 25 has a resistance value below a predetermined value (eg, 0.1 Ω·cm). The material used for the bias electrode 25 is not limited thereto and may be a conductive ceramic made by combining a high melting point metal such as tungsten, tantalum, or molybdenum with the ceramic constituting the electrostatic chuck.

[0076] Furthermore, the bias electrode 25 is preferably a mesh-shaped metal rather than a sheet-shaped metal. This can mitigate the difference in linear expansion coefficient between the bias electrode 25 and the electrostatic chuck 20 caused by the heat input from the plasma, thereby reducing friction between the bias electrode 25 and the electrostatic chuck 20.

[0077] As described above, according to the mounting table 14 and the plasma processing apparatus 1 of this embodiment, by providing the bias electrodes 21 and 25 in the electrostatic chuck 20 , discharge of the heat transfer gas supplied between the lower surface of the substrate W and the upper surface of the electrostatic chuck 20 can be suppressed.

[0078] Furthermore, the contact pins for electrically connecting the electrodes for applying bias power to the power supply lines are shaped so that the area of the surface connected to the electrodes is larger than the area of the surface connected to the power supply lines. This suppresses heat generation in and around the contact pins, improving the in-plane uniformity of the substrate temperature.

[0079] The mounting platform and plasma processing apparatus disclosed in this embodiment are illustrative in all respects and should not be construed as limiting. The above embodiment may be modified and improved in various forms without departing from the scope of the claims and their spirit. The various embodiments described above may also employ other configurations within the scope of non-inconsistency and may be combined within the scope of non-inconsistency.

[0080] The plasma processing apparatus disclosed herein can also be applied to any of the following types of apparatuses: Atomic Layer Deposition (ALD), Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP). Furthermore, any plasma processing apparatus can be used as long as it performs a predetermined process (e.g., etching, film formation, etc.) on a substrate.

Claims

1. A mounting platform, wherein: The mounting platform has: loading surface; an electrode disposed below the mounting surface and configured to apply bias power; a power supply line, disposed below the electrode and configured to apply bias power; as well as a power supply terminal having an upper surface and a lower surface, electrically connecting the electrode and the power supply line, wherein the area of the upper surface of the power supply terminal connected to the electrode is larger than the area of the lower surface connected to the power supply line, The area of the lower surface is greater than or equal to the area of the upper surface of the power supply line connected to the lower surface.

2. The mounting table according to claim 1, wherein: The mounting surface includes a first mounting surface for mounting a substrate and a second mounting surface for mounting an edge ring disposed around the substrate. The electrode has: a first electrode disposed below the first mounting surface; and The second electrode is arranged below the second mounting surface.

3. The mounting table according to claim 2, wherein: The power supply terminals connected to the second electrode are arranged at equal intervals along the circumferential direction of the edge ring.

4. The mounting table according to claim 2 or 3, wherein: An electrostatic adsorption electrode is arranged between the mounting surface and the electrode. At least one of the substrate and the edge ring is electrostatically attracted.

5. The mounting table according to claim 4, wherein: The electrode and the electrostatic adsorption electrode are arranged inside the same dielectric.

6. The mounting table according to any one of claims 1 to 3, wherein An electrode plate is arranged between the power supply terminal and the power supply line.

7. A plasma processing apparatus comprising a chamber and a mounting table for mounting a substrate in the chamber, wherein: The mounting platform has: loading surface; an electrode disposed below the mounting surface and configured to apply bias power; a power supply line, disposed below the electrode and configured to apply bias power; as well as a power supply terminal having an upper surface and a lower surface, electrically connecting the electrode and the power supply line, wherein the area of the upper surface of the power supply terminal connected to the electrode is larger than the area of the lower surface connected to the power supply line, The area of the lower surface is greater than or equal to the area of the upper surface of the power supply line connected to the lower surface.

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