Antenna Encapsulation Structure and Encapsulation Method

Abstract

The present invention provides an antenna packaging structure and a packaging method. The packaging method includes: providing a support substrate, forming a redistribution layer, a first antenna layer, a metal feedthrough pillar, a packaging layer, and a second antenna layer, providing a semiconductor chip and bonding it to the surface of the second antenna layer, and forming a dam dispensing protection layer at least on the top and around the semiconductor chip. The present invention adds a dam dispensing process to the wafer-level packaging to improve the stability of the chip. Further, a bottom fill layer is formed through a bottom fill process to provide double protection for the chip, which can effectively reduce the packaging process flow. All active components or passive components are integrated into one packaging structure, which can effectively reduce the packaging size. The semiconductor chip, redistribution layer, and antenna metal and other structures are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have low power consumption, high process structure integration, and can enhance the signal reception ability and expand the received signal bandwidth by using a multi-layer antenna setting.

Description

Technical Field

[0001] The present invention belongs to the fields of packaging and communication equipment, and particularly relates to an antenna packaging structure and a packaging method. Background Art

[0002] Due to the progress of technology, various high-tech electronic products have been developed to facilitate people's lives, including various electronic devices such as notebook computers, mobile phones, and tablet computers (PADs).

[0003] With the popularization of these high-tech electronic products and the increasing demands of people, in addition to the significant increase in various functions and applications configured in these high-tech products, especially the wireless communication function has been added to meet people's mobile needs. Thus, people can use these high-tech electronic products with wireless communication functions at any place or at any time. This has greatly increased the flexibility and convenience of using these high-tech electronic products. Therefore, people no longer have to be confined to a fixed area, breaking the boundaries of the usage range, making the application of these electronic products truly convenient for people's lives.

[0004] Antenna in Package (AiP) is a technology that integrates an antenna and a chip in a package based on packaging materials and processes to achieve system-level wireless functions. Due to conforming to the trend of increasing integration of silicon-based semiconductor processes, AiP technology provides a good antenna and packaging solution for system-level wireless chips. And with the rapid development of communication information, AiP technology has become an essential technology for 5G (5th Generation) communication and automotive radar chips. Therefore, AiP technology has received extensive attention. Wafer-level packaged antenna (WLP AiP) operates on a whole wafer, making an antenna on the plastic encapsulation layer, which has higher precision and is thinner, lighter, shorter, and smaller in size compared to traditional AiP modules. Thus, it has been widely used. In the application of antennas, such as in mobile phone terminals, the antenna needs to transmit and receive signals through a combination of multiple functional chip modules. The known method is to directly fabricate the antenna on the surface of a printed circuit board (PCB). The disadvantage is that this method will make the antenna occupy additional PCB area. Moreover, due to the long transmission signal line, the performance is poor, the power consumption is large, and the packaging volume is large. Especially, the traditional PCB packaging has too much loss in 5G millimeter-wave transmission, and it is difficult to effectively protect the antenna circuit chip in the existing packaging process. The process flow is still relatively complex, and the antenna electrothermal performance and antenna performance efficiency need to be improved.

[0005] Therefore, it is necessary to provide an antenna packaging structure and a packaging method to solve the above problems in the prior art. Summary of the Invention

[0006] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide an antenna packaging structure and a packaging method, which are used to solve the problems such as large antenna packaging volume and difficult effective protection of chips in the prior art.

[0007] To achieve the above object and other related objects, the present invention provides an antenna packaging method, including the steps of:

[0008] Providing a support substrate, and forming a temporary bonding layer on the support substrate;

[0009] Forming a redistribution layer on the temporary bonding layer, the redistribution layer including a first surface connected to the temporary bonding layer and a second surface opposite to the first surface;

[0010] Forming a first antenna layer electrically connected to the redistribution layer on the second surface;

[0011] Forming a metal feed pillar electrically connected to the first antenna layer on the first antenna layer;

[0012] Encapsulating the metal feed pillar with an encapsulation layer, and exposing the top surface of the metal feed pillar by the encapsulation layer;

[0013] Forming a second antenna layer electrically connected to the metal feed pillar on the encapsulation layer;

[0014] Providing at least one semiconductor chip, and bonding the semiconductor chip to the surface of the second antenna layer away from the encapsulation layer; and

[0015] Performing dam dicing on each of the semiconductor chips to form a dam dicing protection layer, and the dam dicing layer is at least formed on the top and around each of the semiconductor chips.

[0016] Optionally, the support substrate includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate, and a ceramic substrate.

[0017] Optionally, the temporary bonding layer includes a photothermal conversion layer. After performing dam dicing, it further includes the step of: irradiating the photothermal conversion layer with a laser to separate the photothermal conversion layer from the redistribution layer and the support substrate, and then peeling off the redistribution layer and the support substrate.

[0018] Optionally, forming the redistribution layer includes the steps of:

[0019] Forming a first dielectric layer on the surface of the temporary bonding layer;

[0020] A seed layer is formed on the surface of the first dielectric layer by a sputtering process, a first metal layer is formed on the seed layer, and the first metal layer and the seed layer are etched to form a patterned first metal wiring layer;

[0021] A second dielectric layer is formed on the surface of the patterned first metal wiring layer, and the second dielectric layer is etched to form a second dielectric layer with patterned vias;

[0022] A conductive plug is filled in the patterned via, and then a second metal layer is formed on the surface of the second dielectric layer by a sputtering process, and the metal layer is etched to form a patterned second metal wiring layer.

[0023] Optionally, after forming the first antenna layer, the method further includes the steps of: forming a protective adhesion layer covering the first antenna layer on the redistribution layer, the metal feed pillars being formed on the surface of the first antenna layer via the protective adhesion layer, and the encapsulation layer being formed on the protective adhesion layer.

[0024] Optionally, before forming the metal feed pillars, the method further includes the steps of: forming a lower metal layer on the surface of the first antenna layer, the metal feed pillars being formed on the surface of the lower metal layer, wherein the metal feed pillars are formed by a wire bonding process or an electroplating process or an electroless plating process.

[0025] Optionally, there are a plurality of the metal feed pillars, and the arrangement manner of the plurality of metal feed pillars includes: forming an electromagnetic shielding structure based on the metal feed pillars and at least one of the first antenna layer and the second antenna layer to achieve electromagnetic shielding of the encapsulation structure.

[0026] Optionally, the number of the semiconductor chips is multiple, and the semiconductor chips include one of active components and passive components, wherein the active components include one of a power management circuit, a transmitting circuit and a receiving circuit, and the passive components include one of a resistor, a capacitor and an inductor.

[0027] Optionally, before performing the dam dispensing, the method further includes the steps of: performing underfill on each of the semiconductor chips to form an underfill layer, and the underfill layer and the dam dispensing protective layer surround the semiconductor chips.

[0028] The present invention also provides an antenna packaging structure, which is preferably manufactured by the antenna packaging method of the present invention. The antenna packaging structure includes:

[0029] A redistribution layer, which includes a first surface and a second surface opposite to the first surface;

[0030] A first antenna layer, formed on the second surface and electrically connected to the redistribution layer;

[0031] A metal feeder post formed on the first antenna layer and electrically connected to the first antenna layer;

[0032] An encapsulation layer covering the metal feeder post, and the encapsulation layer exposes the top surface of the metal feeder post;

[0033] A second antenna layer formed on the encapsulation layer, and the second antenna layer is electrically connected to the metal feeder post;

[0034] At least one semiconductor chip bonded to the surface of the second antenna layer on the side away from the encapsulation layer; and

[0035] A dam dispensing protection layer formed at least on the top and around each of the semiconductor chips.

[0036] Optionally, the connection part of the metal feeder post and the first antenna layer has a lower metal layer, the material of the metal feeder post includes one of Au, Ag, Cu, and Al, and the material of the lower metal layer includes a stack layer composed of a Ni layer and an Au layer.

[0037] Optionally, the antenna packaging structure further includes a protective adhesive layer covering the first antenna layer, the metal feeder post is formed on the surface of the first antenna layer via the protective adhesive layer, and the encapsulation layer is formed on the protective adhesive layer.

[0038] Optionally, there are multiple metal feeder posts, and the arrangement of the multiple metal feeder posts includes: forming an electromagnetic shielding structure based on at least one of the metal feeder post and the first antenna layer and the second antenna layer to achieve electromagnetic shielding of the packaging structure.

[0039] Optionally, the material of the encapsulation layer includes one of silica gel and epoxy resin; the material of the dam dispensing protection layer includes epoxy resin.

[0040] Optionally, the number of the semiconductor chips is multiple, the semiconductor chips include one of active components and passive components, wherein the active components include one of a power management circuit, a transmitting circuit, and a receiving circuit, and the passive components include one of a resistor, a capacitor, and an inductor.

[0041] Optionally, the antenna packaging structure further includes a bottom filling layer formed between the semiconductor chip and the second antenna layer, and the bottom filling layer and the dam dispensing protection layer surround the semiconductor chip.

[0042] As described above, for the antenna packaging structure and packaging method of the present invention, a dam dispensing process is added to the wafer-level packaging to form a dam dispensing protection layer, improving the stability of the chip and providing better protection for the chip. Further, a bottom filling layer is formed through the bottom filling process to double-protect the chip, and the packaging process flow can be effectively reduced, improving the process cycle. By arranging the circuits of different redistribution layers, all active components or passive components are integrated into one packaging structure, effectively reducing the packaging size. The structures such as semiconductor chips, redistribution layers, and antenna metals are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical properties and high-efficiency antenna performance, and at the same time have lower power consumption. The process structure has high integration. The use of multi-layer antennas can enhance the signal reception ability and expand the signal reception bandwidth. The antenna structure is packaged using the fan-out packaging method, effectively reducing the packaging volume, making the antenna packaging structure have a high degree of integration and better packaging performance, and having broad application prospects in the field of semiconductor packaging. Description of the Drawings

[0043] Figure 1 It shows a flowchart of the chip packaging method provided by an embodiment of the present invention.

[0044] Figure 2 It shows a schematic structural diagram of forming a temporary bonding layer in the antenna packaging method according to an embodiment of the present invention.

[0045] Figure 3 It shows a schematic structural diagram of forming a first dielectric layer in the antenna packaging method according to an embodiment of the present invention.

[0046] Figure 4 It shows a schematic structural diagram of forming a first metal wiring layer in the antenna packaging method according to an embodiment of the present invention.

[0047] Figure 5 It shows a diagram of forming a second dielectric layer and a second metal wiring layer in the antenna packaging method according to an embodiment of the present invention.

[0048] Figure 6 It shows a schematic diagram of forming a redistribution layer with a multi-layer stack structure in the antenna packaging method according to an embodiment of the present invention.

[0049] Figure 7 It shows a schematic structural diagram of forming a first antenna layer in the antenna packaging method according to an embodiment of the present invention.

[0050] Figure 8 It shows a schematic structural diagram of forming a metal feed pillar in the antenna packaging method according to an embodiment of the present invention.

[0051] Figure 9 It shows a schematic structural diagram of forming a packaging material layer in the antenna packaging method according to an embodiment of the present invention.

[0052] Figure 10 It shows a schematic structural diagram of forming a packaging layer in the antenna packaging method according to an embodiment of the present invention.

[0053] Figure 11 It shows a schematic structural diagram of forming a protective adhesion layer in the antenna packaging method according to an embodiment of the present invention.

[0054] Figure 12 It shows a schematic structural diagram of forming a second antenna layer in the antenna packaging method according to an embodiment of the present invention.

[0055] Figure 13 It shows a schematic structural diagram of forming a semiconductor chip in the antenna packaging method according to an embodiment of the present invention.

[0056] Figure 14 It shows a schematic structural diagram of forming a bottom filling layer in the antenna packaging method according to an embodiment of the present invention.

[0057] Figure 15 It shows a schematic structural diagram of forming a dam dispensing protection layer in the antenna packaging method according to an embodiment of the present invention.

[0058] Figure 16 It shows a schematic structural diagram of separating a support substrate in the antenna packaging method according to an embodiment of the present invention.

[0059] Description of component labels

[0060] 101 Support substrate

[0061] 102 Temporary bonding layer

[0062] 201 First dielectric layer

[0063] 202 First metal wiring layer

[0064] 203 Second dielectric layer

[0065] 204 Second metal wiring layer

[0066] 301 First antenna layer

[0067] 302 Lower metal layer

[0068] 303 Metal feeder post

[0069] 304 Encapsulation material layer

[0070] 305 Packaging layer

[0071] 306 Protective adhesion layer

[0072] 307 Second antenna layer

[0073] 401 Semiconductor chip

[0074] 402 Bottom filling layer

[0075] 403 Dam point glue protection layer

[0076] Steps S1 - S8 Specific implementation manners

[0077] The following uses specific specific examples to illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0078] When detailing the embodiments of the present invention, for the convenience of description, the cross-sectional views showing the device structure will be enlarged locally in a non-general proportion, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention herein. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.

[0079] For the convenience of description, spatial relationship terms such as "under", "below", "lower than", "beneath", "above", "on", etc. may be used herein to describe the relationship between one element or feature shown in the drawings and other elements or features. It will be understood that these spatial relationship terms are intended to include other directions of the device in use or operation in addition to the directions depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or there can also be one or more intermediate layers.

[0080] In the context of the present application, the structure in which the first feature is "above" the second feature described may include an embodiment in which the first and second features are formed in direct contact, and may also include an embodiment in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0081] It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Therefore, only the components related to the present invention are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0082] Embodiment 1:

[0083] As Figure 1 shown, the present invention provides an antenna encapsulation method, and the encapsulation method includes the steps:

[0084] Provide a support substrate, and form a temporary bonding layer on the support substrate;

[0085] Form a redistribution layer on the temporary bonding layer, the redistribution layer including a first surface connected to the temporary bonding layer and a second surface opposite to the first surface;

[0086] Form a first antenna layer electrically connected to the redistribution layer on the second surface;

[0087] Form a metal feedthrough post electrically connected to the first antenna layer on the first antenna layer;

[0088] Encapsulate the metal feedthrough post with an encapsulation layer, and expose the top surface of the metal feedthrough post by the encapsulation layer;

[0089] Form a second antenna layer electrically connected to the metal feedthrough post on the encapsulation layer;

[0090] Provide at least one semiconductor chip, and bond the semiconductor chip to the surface of the second antenna layer away from the encapsulation layer; and

[0091] Perform dam dispensing on each of the semiconductor chips to form a dam dispensing protection layer, and the dam dispensing layer is formed at least on the top and around each of the semiconductor chips.

[0092] The packaging method of the present invention will be described in detail below with reference to specific embodiments.

[0093] As shown in Figure 1 S1 and Figure 2 as shown, provide a support substrate 101, and form a temporary bonding layer 102 on the support substrate 101.

[0094] As an example, the support substrate 101 includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate, and a ceramic substrate. Specifically, in this embodiment, the support substrate 101 is selected as a glass substrate, which has a low cost, is easy to form a separation layer on its surface, and can reduce the difficulty of subsequent peeling processes.

[0095] As an example, the temporary bonding layer 102 includes a photothermal conversion layer. Referring to Figure 16 as shown, after performing dam dispensing, the method further includes the step of irradiating the photothermal conversion layer with a laser to separate the photothermal conversion layer from the redistribution layer and the support substrate 101, and then peeling off the redistribution layer and the support substrate 101.

[0096] Specifically, the temporary bonding layer 102 includes a light-to-thermal conversion layer (LTHC). After being formed on the support substrate 101 through a spin coating process, it is cured and shaped through a curing process. The light-to-thermal conversion layer (LTHC) has stable performance and a relatively smooth surface, which is beneficial for the subsequent fabrication of the redistribution layer. Moreover, in the subsequent peeling process, the peeling difficulty is relatively low. In addition, after the redistribution layer and the support substrate 101 are peeled off, the support substrate 101 can be reused, saving costs.

[0097] As Figure 1 in S2 of Figures 3 - 6 shown, a redistribution layer (RDL) is formed on the temporary bonding layer 102. The redistribution layer includes a first surface connected to the temporary bonding layer 102 and a second surface opposite to the first surface.

[0098] As an example, forming the redistribution layer includes the steps of:

[0099] As Figure 3 shown, a first dielectric layer 201 is formed on the surface of the temporary bonding layer 102 by a chemical vapor deposition process or a physical vapor deposition process. The material of the first dielectric layer 201 includes one or more combinations of epoxy resin, silica gel, PI, PBO, BCB, silicon oxide, phosphosilicate glass, fluorine-containing glass, etc. For example, the material of the first dielectric layer 201 is selected as PI (polyimide) to further reduce the process difficulty and process cost.

[0100] Next, as Figure 4 shown, a seed layer is formed on the surface of the first dielectric layer 201 by a sputtering process. A first metal layer is formed on the seed layer, and the first metal layer and the seed layer are etched to form a patterned first metal wiring layer 202. The material of the seed layer includes a stack of a titanium layer and a copper layer. The material of the first metal wiring layer 202 includes one or more combinations of copper, aluminum, nickel, gold, silver, titanium, etc.

[0101] Next, as Figure 5 shown, a second dielectric layer 203 is formed on the surface of the patterned first metal wiring layer 202 by a chemical vapor deposition process or a physical vapor deposition process, and the second dielectric layer 203 is etched to form a second dielectric layer 203 with patterned vias. The material of the second dielectric layer 203 includes one or more combinations of epoxy resin, silica gel, PI, PBO, BCB, silicon oxide, phosphosilicate glass, fluorine-containing glass, etc. For example, the material of the second dielectric layer 203 is selected as PI (polyimide) to further reduce the process difficulty and process cost.

[0102] Continuing, as Figure 5As shown, conductive plugs are filled in the patterned vias, and then a second metal layer is formed on the surface of the second dielectric layer 203 by sputtering, and the metal layer is etched to form a patterned second metal wiring layer 204. The material of the second metal wiring layer includes one or a combination of two or more of copper, aluminum, nickel, gold, silver, and titanium.

[0103] In addition, as Figure 6 shown, the steps of forming the second dielectric layer and the second metal layer are repeated to form multiple metal layers and multiple dielectric layers, thereby forming a rewiring layer with a multi-layer stack structure to achieve different wiring functions.

[0104] As Figure 1 in S3 and Figure 7 shown, a first antenna layer 301 electrically connected to the rewiring layer is formed on the second surface. Among them, the material of the first antenna layer 301 can be copper, etc., and the structure of the first antenna layer is set according to the actual situation.

[0105] As an example, referring to Figure 11 shown, after forming the first antenna layer 301, the steps further include: forming a protective adhesion layer 306 covering the first antenna layer 301 on the rewiring layer, the metal feed pillar 303 is formed on the surface of the first antenna layer 301 via the protective adhesion layer 306, and the encapsulation layer 305 is formed on the protective adhesion layer 306. In an optional example, the material of the protective adhesion layer 306 includes polyimide. Since adjacent two-layer antenna structures are separated by an antenna layer, it is easy to cause a decrease in the adhesion strength between the two-layer antenna structures, resulting in displacement or rupture. In the present invention, a protective adhesion layer 306 is provided between adjacent two-layer antenna structures. On the one hand, it can protect the antenna metal, and on the other hand, it can improve the adhesion performance between adjacent two-layer antenna structures and improve the mechanical structure strength of the antenna.

[0106] As Figure 1 in S4 and Figure 8 shown, a metal feed pillar 303 electrically connected to the first antenna layer 301 is formed on the first antenna layer 301.

[0107] As an example, before forming the metal feed pillar 303 (wire bond), the steps further include: forming a lower metal layer 302 on the surface of the first antenna layer, and the metal feed pillar 303 is formed on the surface of the lower metal layer 302. Among them, in an optional example, the metal feed pillar 303 is formed by wire bonding process, electroplating process or electroless plating process.

[0108] Specifically, the lower metal layer 302 includes a stack layer composed of a Ni layer and an Au layer. The material of the metal feed pillar 303 includes one of Au, Ag, Cu, and Al, but is not limited thereto, and can also be any material that can be used as the pillar metal material. In this embodiment, the wire bonding process is used to form the metal feed pillar 303 on the lower metal layer 302. The lower metal layer 302 can effectively enhance the bonding strength between the metal feed pillar 303 and the first antenna layer and reduce the contact resistance. In an alternative example, when the protective adhesion layer 306 exists, it further includes the step of forming an opening in the protective adhesion layer 306 to form the metal feed pillar 303.

[0109] As Figure 1 in S5 and Figures 9 - 11 shown, the encapsulation layer 305 is used to encapsulate the metal feed pillar 303, and the top surface of the metal feed pillar 303 is exposed by the encapsulation layer 305.

[0110] Specifically, in an example, the encapsulation material layer 304 is used to encapsulate the metal feed pillar 303, and the encapsulation material layer 304 is thinned (ground) so that the top surface of the metal feed pillar 303 is exposed, and the thinned encapsulation material layer 304 forms the encapsulation layer 305. As an example, the method of using the encapsulation material layer 304 to encapsulate the metal feed pillar 303 includes one of compression molding, transfer molding, liquid encapsulation molding, vacuum lamination, and spin coating. The material of the encapsulation layer 305 includes one of silicone and epoxy resin. Additionally, as Figure 11 shown, when the protective adhesion layer 306 exists, the encapsulation layer 305 is formed on the protective adhesion layer 306.

[0111] As Figure 1 in S6 and Figure 12 shown, a second antenna layer 307 electrically connected to the metal feed pillar 303 is formed on the encapsulation layer 305. Specifically, the material of the second antenna layer 307 can be copper or the like, and the structure of the second antenna layer is set according to actual requirements. The second antenna layer 307 is electrically connected to the first antenna layer 301 through the metal feed pillar 303. The multi-layer antenna layer can enhance the signal reception ability and expand the signal reception bandwidth. The present invention can obtain an antenna structure layer with a multi-layer structure, which can effectively shorten the conduction path between components, has better electrical properties and antenna performance, and at the same time has lower power consumption. The structures such as the semiconductor chip 401, the redistribution layer, and the antenna metal are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, has better electrical properties and high-efficiency antenna performance, and at the same time has lower power consumption, and has high process structure integration.

[0112] As Figure 1 in S7 andFigure 13 As shown, at least one semiconductor chip 401 is provided, and the semiconductor chip 401 is bonded to the surface of the second antenna layer 307 on the side away from the encapsulation layer 305. For example, the semiconductor chip can be formed by a bonding method well-known in the art. After die bonding, the chip is preliminarily fixed on the wafer through reflow soldering.

[0113] As an example, the number of the semiconductor chips 401 is multiple, for example, two. The semiconductor chip 401 includes one of an active component and a passive component. Among them, the active component includes one of a power management circuit, a transmitting circuit, and a receiving circuit, and the passive component includes one of a resistor, a capacitor, and an inductor. The types of different semiconductor chips are set according to actual needs. In the present invention, all active components or passive components can be integrated into a packaging structure through the circuit layout of different redistribution layers. Active and passive components are simultaneously mounted on the same wafer, which can effectively reduce the packaging size.

[0114] As shown in Figure 1 S8 and Figure 15 as shown, dam dispensing is performed on each of the semiconductor chips 401 to form a dam dispensing protection layer 403. The dam dispensing layer is at least formed on the top and around each of the semiconductor chips.

[0115] As shown in Figure 14 as an example, before performing the dam dispensing, the step further includes: underfilling each of the semiconductor chips 401 to form an underfill layer 402. The underfill layer 402 and the dam dispensing protection layer 403 surround the semiconductor chip 401.

[0116] Specifically, after the semiconductor chip 401 is fixed, a dam and dispense process is performed on it. Using dispensing technology, dams are formed around the semiconductor chip 401, and then dispensing is performed in the middle to form the dam and dispense protection layer 403. The formed dam and dispense protection layer 403 can improve the stability of the chip and effectively protect the semiconductor chip 401. In a further optional example, after underfill, that is, after the bottom fill layer is formed on the semiconductor chip 401 by bottom filling, the dam and dispense process is performed. The dam and dispense protection layer 403 and the bottom fill layer 402 surround the semiconductor chip 401, thereby realizing double protection of the semiconductor chip 401 and reducing the process flow. Among them, the bottom fill layer 402 can be formed based on the siphon principle, the material of the bottom fill layer 402 can be epoxy resin, the dam and dispense protection layer 403 can be formed based on the dispensing process, and the material of the dam and dispense protection layer 403 can be epoxy resin.

[0117] As an example, there are multiple metal feed pillars 303, and the arrangement of the multiple metal feed pillars 303 includes: forming an electromagnetic shielding structure based on the metal feed pillar and at least one of the first antenna layer 301 and the second antenna layer 307 to achieve electromagnetic shielding of the package structure.

[0118] Specifically, in one example, an arrangement method of the metal feed pillar 303 is provided. The metal feed pillar 303 is formed on the surface of the first antenna layer 301. Through the arrangement of the metal feed pillar 303, the metal feed pillar 303 and specific positions of some metal layers in the first antenna layer 301 and the second antenna layer 307 jointly form an electromagnetic shielding protection structure, thereby achieving electromagnetic shielding of the obtained package structure. For example, in an optional example, the middle vertical metal feed pillar 303 can form a shielding structure with the upper and lower antenna layers. A part of the metal feed pillar 303 is grounded and belongs to the ground wire. This part of the metal feed pillar 303 can be electrically connected to the first antenna layer 301, or can be electrically connected to the second antenna layer 307. Of course, it can also be that this part of the metal feed pillar 303 is electrically connected to both the first antenna layer 301 and the second antenna layer 307. The mutual electromagnetic influence formed during the chip electrical signal transmission can be eliminated through the ground wire, thereby achieving the effect of electromagnetic shielding. In an optional example, the grounded metal feed pillar 303 is arranged in a circular or square shape, and is evenly arranged and electrically connected to the corresponding upper and lower first antenna layers 301 and second antenna layers 307, thereby forming an electromagnetic shielding structure and achieving electromagnetic shielding.

[0119] Embodiment 2:

[0120] As Figure 16 shown, and referring toFigures 1 to 15 , the present invention also provides an antenna packaging structure. Among them, the antenna packaging structure is preferably obtained by packaging using the antenna packaging method of the present invention. Of course, the antenna packaging structure can also be obtained by using other packaging methods. The antenna packaging structure includes:

[0121] A redistribution layer, the redistribution layer includes a first surface and a second surface opposite to the first surface;

[0122] A first antenna layer 301, formed on the second surface and electrically connected to the redistribution layer;

[0123] A metal feedthrough post 303, formed on the first antenna layer 301 and electrically connected to the first antenna layer 301;

[0124] A packaging layer 305, covering the metal feedthrough post 303, and the packaging layer exposes the top surface of the metal feedthrough post 303;

[0125] A second antenna layer 307, formed on the packaging layer 305, and the second antenna layer 307 is electrically connected to the metal feedthrough post 303;

[0126] At least one semiconductor chip 401, bonded to the surface of the second antenna layer 307 away from the packaging layer 305;

[0127] A dam dispensing protection layer 403, formed at least on the top and around each of the semiconductor chips 401.

[0128] Specifically, in one example, the redistribution layer includes a first dielectric layer 201, a first metal wiring layer 202, a second dielectric layer 203, conductive vias, and a second metal wiring layer 204. Of course, it can also be multiple metal layers and multiple dielectric layers to form a redistribution layer with a multi-layer stacked structure to achieve different wiring functions. Among them, the material of the dielectric layer includes one or more combinations of epoxy resin, silicone, PI, PBO, BCB, silicon oxide, phosphosilicate glass, and fluorinated glass. For example, the material of the dielectric layer is selected as PI (polyimide) to further reduce the process difficulty and process cost. The material of the metal wiring layer includes one or more combinations of copper, aluminum, nickel, gold, silver, and titanium.

[0129] As an example, the connection part of the metal feed column 303 and the first antenna layer 301 has a lower metal layer 302, that is, at the interface where the two are in contact, the lower metal layer is formed between the two. Among them, the material of the metal feed column 303 includes one of Au, Ag, Cu, and Al, but it is not limited thereto, and it can also be any material that can be used as the stud metal material. The material of the lower metal layer 302 includes a stack layer composed of a Ni layer and an Au layer. The lower metal layer 302 can effectively strengthen the bonding strength between the metal feed column 303 and the redistribution layer and reduce the contact resistance.

[0130] Specifically, the material of the first antenna layer 301 can be copper, and the material of the second antenna layer 307 can be copper, etc. The second antenna layer 307 is electrically connected to the first antenna layer 301 through the metal feed column 303. The multi-layer antenna layer can enhance the signal receiving ability and expand the received signal bandwidth. The present invention can obtain an antenna structure layer with a multi-layer structure, which can effectively shorten the conduction path between components, have better electrical properties and antenna performance, and at the same time have lower power consumption. The structures such as the semiconductor chip 401, the redistribution layer, and the antenna metal are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical properties and high-efficiency antenna performance, and at the same time have lower power consumption, and the process structure integration is high.

[0131] As an example, the antenna packaging structure further includes a protective adhesive layer 306. The protective adhesive layer 306 covers the first antenna layer 301. The metal feed column 303 is formed on the surface of the first antenna layer 301 via the protective adhesive layer 306. The encapsulation layer 305 is formed on the protective adhesive layer 306.

[0132] Specifically, a protective adhesive layer 306 covering the first antenna layer 301 is formed on the redistribution layer. The metal feed column 303 is formed on the surface of the first antenna layer 301 via the protective adhesive layer 306. The encapsulation layer 305 is formed on the protective adhesive layer 306. See Figure 11 shown. In an optional example, the material of the protective adhesive layer 306 includes polyimide. Since the adjacent two-layer antenna structures are separated by an antenna layer, it is easy to cause a decrease in the adhesion strength between the two-layer antenna structures, resulting in displacement or rupture. The present invention provides a protective adhesive layer 306 between the adjacent two-layer antenna structures. On the one hand, it can protect the antenna metal, and on the other hand, it can improve the adhesion performance between the adjacent two-layer antenna structures and improve the mechanical structure strength of the antenna.

[0133] As an example, there are multiple metal feeder posts 303, and the arrangement of the multiple metal feeder posts 303 includes: forming an electromagnetic shielding structure based on at least one of the metal feeder posts and the first antenna layer 301 and the second antenna layer 307 to achieve electromagnetic shielding of the packaging structure.

[0134] Specifically, in one example, an arrangement of the metal feeder posts 303 is provided. The metal feeder posts 303 are formed on the surface of the first antenna layer 301. Through the arrangement of the metal feeder posts 303, the metal feeder posts 303 and specific positions of some metal layers in the first antenna layer 301 jointly form an electromagnetic shielding protection structure, thereby achieving electromagnetic shielding of the obtained packaging structure. For example, in an alternative example, the middle vertical metal feeder posts 303 can form a shielding structure with the upper and lower antenna layers. A part of the metal feeder posts 303 is grounded and belongs to the ground wire. This part of the metal feeder posts 303 can be electrically connected to the first antenna layer 301, or can be electrically connected to the second antenna layer 307. Of course, it can also be that this part of the metal feeder posts 303 is electrically connected to both the first antenna layer 301 and the second antenna layer 307. The mutual electromagnetic influence formed during the chip electrical signal transmission can be eliminated through the ground wire, thereby achieving the effect of electromagnetic shielding. In an alternative example, the grounded metal feeder posts 303 are arranged in a circular or square shape, and are evenly arranged, and are electrically connected to the corresponding upper and lower first antenna layers 301 and second antenna layers 307, thereby forming an electromagnetic shielding structure and achieving electromagnetic shielding.

[0135] As an example, the material of the encapsulation layer 305 includes one of silicone and epoxy resin. Additionally, as Figure 11 shown, when the protective adhesive layer 306 exists, the encapsulation layer 305 is formed on the protective adhesive layer 306.

[0136] As an example, the number of the semiconductor chips 401 is multiple, for example, it can be two. The semiconductor chips 401 include one of active components and passive components. Among them, the active components include one of a power management circuit, a transmitting circuit, and a receiving circuit, and the passive components include one of a resistor, a capacitor, and an inductor. The present invention can integrate all active components or passive components in one packaging structure through the circuit arrangement of different rewiring layers. By simultaneously mounting active and passive components on the same wafer, the packaging size can be effectively reduced.

[0137] As an example, the antenna packaging structure further includes a bottom filling layer 402. The bottom filling layer 402 is formed between the semiconductor chip 401 and the second antenna layer 307. The bottom filling layer 402 and the dam dispensing protection layer 403 surround the semiconductor chip 401.

[0138] As an example, the material of the underfill layer 402 can be epoxy resin, and the underfill layer 402 can be an epoxy resin layer.

[0139] As an example, the material of the dam dispensing protection layer 403 includes epoxy resin, and the dam dispensing protection layer 403 can be an epoxy resin layer.

[0140] Specifically, in the present invention, the dam dispensing protection layer 403 is formed, and the formed dam dispensing protection layer 403 can improve the stability of the chip and effectively protect the semiconductor chip 401. In a further optional example, the dam dispensing protection layer 403 and the underfill layer 402 surround the semiconductor chip 401, thereby realizing double protection of the semiconductor chip 401 and reducing the process flow. Among them, the material of the underfill layer 402 can be epoxy resin, and the material of the dam dispensing protection layer 403 can be epoxy resin.

[0141] As described above, for the antenna packaging structure and packaging method of the present invention, a dam dispensing process is added to the wafer-level packaging to improve the stability of the chip and better protect the chip. Further, an underfill layer is formed through an underfill process to double-protect the chip, and the packaging process flow can be effectively reduced and the process cycle can be improved. By arranging the circuits of different redistribution layers, all active components or passive components are integrated in one packaging structure, which can effectively reduce the packaging size. The semiconductor chip, redistribution layer, antenna metal and other structures are arranged in a vertical arrangement structure, which can effectively shorten the conduction path between components, have better electrical properties and high-efficiency antenna performance, and at the same time have low power consumption. The process structure has high integration, and the use of multiple-layer antennas can enhance the signal reception ability and expand the signal reception bandwidth. The antenna structure is packaged by a fan-out packaging method, which effectively reduces the packaging volume, makes the antenna packaging structure have high integration and better packaging performance, and has broad application prospects in the field of semiconductor packaging.

[0142] The above embodiments are only illustrative of the principles and effects of the present invention, and are not used to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. An antenna packaging method, characterized in that, the packaging method includes the steps of: providing a support substrate and forming a temporary bonding layer on the support substrate; forming a redistribution layer on the temporary bonding layer, the redistribution layer including a first surface connected to the temporary bonding layer and a second surface opposite to the first surface; forming a first antenna layer electrically connected to the redistribution layer on the second surface; forming a protective adhesive layer covering the first antenna layer on the redistribution layer; forming a metal feed pillar electrically connected to the first antenna layer on the protective adhesive layer; forming a packaging layer on the protective adhesive layer, packaging the metal feed pillar, and exposing the top surface of the metal feed pillar by the packaging layer; forming a second antenna layer electrically connected to the metal feed pillar on the packaging layer; the number of the metal feed pillars is multiple, and the arrangement manner of the multiple metal feed pillars includes: forming an electromagnetic shielding structure based on the metal feed pillar and at least one of the first antenna layer and the second antenna layer to achieve electromagnetic shielding of the packaging structure; providing at least one semiconductor chip and bonding the semiconductor chip to the surface of the second antenna layer on the side away from the packaging layer, and the semiconductor chip, the redistribution layer, the first antenna layer and the second antenna layer are arranged in a vertical arrangement structure; performing dam dispensing on each semiconductor chip to form a dam dispensing protection layer, and the dam dispensing layer is formed at least on the top and around each semiconductor chip.

2. The antenna packaging method according to claim 1, characterized in that, the support substrate includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate and a ceramic substrate.

3. The antenna packaging method according to claim 1, characterized in that, the temporary bonding layer includes a photothermal conversion layer, and after performing dam dispensing, it further includes the step of: irradiating the photothermal conversion layer with a laser to separate the photothermal conversion layer from the redistribution layer and the support substrate, and then peeling off the redistribution layer and the support substrate.

4. The antenna packaging method according to claim 1, characterized in that, forming the redistribution layer includes the steps of: forming a first dielectric layer on the surface of the temporary bonding layer; forming a seed layer on the surface of the first dielectric layer by a sputtering process, forming a first metal layer on the seed layer, and etching the first metal layer and the seed layer to form a patterned first metal wiring layer; forming a second dielectric layer on the surface of the patterned first metal wiring layer and etching the second dielectric layer to form a second dielectric layer with patterned through holes; filling conductive plugs in the patterned through holes, then forming a second metal layer on the surface of the second dielectric layer by a sputtering process, and etching the metal layer to form a patterned second metal wiring layer.

5. The antenna packaging method according to claim 1, characterized in that, Before forming the metal feed column, the method further includes the steps of: forming a lower metal layer on the surface of the first antenna layer, wherein the metal feed column is formed on the surface of the lower metal layer, and the metal feed column is formed by wire bonding process, electroplating process or electroless plating process.

6. The antenna packaging method according to claim 1, wherein, the number of the semiconductor chips is plural, and the semiconductor chips include one of active components and passive components. Among them, the active components include one of a power management circuit, a transmitting circuit and a receiving circuit, and the passive components include one of a resistor, a capacitor and an inductor.

7. The antenna packaging method according to any one of claims 1-6, wherein, Before performing the dam dispensing, the method further includes the steps of: performing underfill on each of the semiconductor chips to form an underfill layer, and the underfill layer and the dam dispensing protection layer surround the semiconductor chips.

8. An antenna packaging structure, wherein, the antenna packaging structure includes: a redistribution layer including a first surface and a second surface opposite to the first surface; a first antenna layer formed on the second surface and electrically connected to the redistribution layer; metal feed columns formed on the first antenna layer and electrically connected to the first antenna layer; a packaging layer covering the metal feed columns, and the top surface of the metal feed columns is exposed by the packaging layer; a protective adhesive layer covering the first antenna layer, the metal feed columns are formed on the surface of the first antenna layer via the protective adhesive layer, and the packaging layer is formed on the protective adhesive layer; a second antenna layer formed on the packaging layer, and the second antenna layer is electrically connected to the metal feed columns; the number of the metal feed columns is plural, and the arrangement of the plural metal feed columns includes: forming an electromagnetic shielding structure based on the metal feed columns and at least one of the first antenna layer and the second antenna layer to achieve electromagnetic shielding of the packaging structure; at least one semiconductor chip bonded to the surface of the second antenna layer away from the packaging layer, and the semiconductor chip, the redistribution layer, the first antenna layer and the second antenna layer are arranged in a vertical arrangement structure; a dam dispensing protection layer formed at least on the top and around each of the semiconductor chips.

9. The antenna packaging structure according to claim 8, wherein, a lower metal layer is formed at the connection part between the metal feed column and the first antenna layer, the material of the metal feed column includes one of Au, Ag, Cu, and Al, and the material of the lower metal layer includes a stack layer composed of a Ni layer and an Au layer.

10. The antenna packaging structure according to claim 8, wherein, the material of the packaging layer includes one of silica gel and epoxy resin; the material of the dam dispensing protection layer includes epoxy resin.

11. The antenna packaging structure according to claim 8, wherein, The number of the semiconductor chips is multiple, and the semiconductor chips include one of active components and passive components. Among them, the active components include one of a power management circuit, a transmitting circuit, and a receiving circuit, and the passive components include one of a resistor, a capacitor, and an inductor.

12. The antenna packaging structure according to any one of claims 8-11, characterized in that, the antenna packaging structure further includes an underfill layer, the underfill layer is formed between the semiconductor chip and the second antenna layer, and the underfill layer and the dam dispensing protection layer surround the semiconductor chip.

Images