Display panel and display device

Abstract

The embodiment of the present invention discloses a display panel and a display device. The display panel includes a substrate; a first transistor and a second transistor, the first transistor and the second transistor are formed on the substrate, the first transistor includes a first active layer, a first gate, a first source and a first drain, the first active layer includes silicon; the second transistor includes a second active layer, a second gate, a second source and a second drain, the second active layer includes an oxide semiconductor; the second active layer is located on the side of the first active layer away from the substrate; a first insulating layer and a second insulating layer, the first insulating layer is located on the side of the second active layer away from the substrate, and is located between the second gate and the second active layer, and the second insulating layer is located on the side of the second active layer facing the substrate; wherein the concentration of oxygen in the first insulating layer is less than the concentration of oxygen in the second insulating layer. This is to improve the stability of the second transistor and ensure the good performance of the driving circuit.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] Organic Light-Emitting Diode (OLED) display panels are widely popular because of their advantages such as self-luminescence, high contrast, thin thickness, fast response speed, and applicability to flexible panels.

[0003] The OLED element of the OLED display panel is a current-driven element, and it is necessary to set up a corresponding pixel circuit and a driving circuit. The driving circuit provides a driving signal to the pixel circuit so that the pixel circuit provides a driving current to the OLED element and drives the OLED element to emit light. Transistors are provided in the driving circuit and the pixel circuit of the OLED display panel. Transistors often use indium gallium zinc oxide (IGZO) as an active layer to reduce leakage in the transistor. However, the stability of the IGZO transistor in the prior art is poor, which in turn affects the performance of the driving circuit and / or the pixel circuit, and affects the display effect of the display panel. Summary of the invention

[0004] The embodiments of the present invention provide a display panel and a display device, so as to improve the stability of the second transistor and ensure good performance of the driving circuit.

[0005] In a first aspect, an embodiment of the present invention provides a display panel, the display panel comprising

[0006] substrate substrate;

[0007] a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, the first transistor comprises a first active layer, a first gate, a first source and a first drain, the first active layer comprises silicon; the second transistor comprises a second active layer, a second gate, a second source and a second drain, the second active layer comprises an oxide semiconductor; the second active layer is located on a side of the first active layer away from the substrate;

[0008] a first insulating layer and a second insulating layer, wherein the first insulating layer is located on a side of the second active layer away from the substrate and between the second gate and the second active layer, and the second insulating layer is located on a side of the second active layer facing the substrate; wherein,

[0009] The concentration of oxygen in the first insulating layer is lower than the concentration of oxygen in the second insulating layer;

[0010] The display panel includes a pixel circuit and a driving circuit providing a driving signal to the pixel circuit, wherein the driving circuit includes the second transistor and the pixel circuit includes the first transistor or the driving circuit includes the first transistor.

[0011] In a second aspect, an embodiment of the present invention further provides a display device, which includes the display panel described in the first aspect.

[0012] The display panel provided by the embodiment of the present invention includes a first crystal and a second transistor, the first active layer of the first transistor includes silicon, the second active layer of the second transistor includes an oxide semiconductor, the first insulating layer is located on the side of the second active layer away from the substrate, and the second insulating layer is located on the side of the second active layer close to the substrate, and the concentration of oxygen in the first insulating layer is set to be less than the concentration of oxygen in the second insulating layer, that is, the concentration of oxygen in the first insulating layer is appropriately reduced to avoid defects in the first insulating layer from affecting the second active layer; at the same time, the concentration of oxygen in the second insulating layer is appropriately increased to ensure the normal function of the second active layer. In this way, the stability of the second transistor is improved and the performance of the driving circuit is ensured to be good. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a schematic structural diagram of a display panel provided by an embodiment of the present invention;

[0014] Figure 2 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0015] Figure 3 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0016] Figure 4 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0017] Figure 5 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0018] Figure 6 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0019] Figure 7 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0020] Figure 8 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0021] Fig. 9It is a structural schematic diagram of a display device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0022] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0023] Figure 1 is a schematic diagram of the structure of a display panel provided by an embodiment of the present invention, such as Figure 1 As shown, the display panel 100 provided by the embodiment of the present invention includes: a substrate 10; a first transistor 20 and a second transistor 30, the first transistor 20 and the second transistor 30 are formed on the substrate 10, the first transistor 20 includes a first active layer 21, a first gate 22, a first source 23 and a first drain 24, the first active layer 21 includes silicon; the second transistor 30 includes a second active layer 31, a second gate 32, a second source 33 and a second drain 34, the second active layer 31 includes an oxide semiconductor; the second active layer 31 is located on the side of the first active layer 21 away from the substrate 10; a first insulating layer 40 and a second insulating layer 41, the first insulating layer 40 is located on the side of the second active layer 31 away from the substrate 10, and is located between the second gate 32 and the second active layer 31, and the second insulating layer 41 is located on the side of the second active layer 31 facing the substrate 10; wherein the concentration of oxygen in the first insulating layer 40 is less than the concentration of oxygen in the second insulating layer 41; the display panel 100 includes a pixel circuit ( Figure 1 ) and a driving circuit 50 for providing a driving signal to the pixel circuit, wherein the driving circuit 50 includes at least one second transistor 30, wherein: Figure 1 The following description will be made by taking an example where the driving circuit 50 includes both the first transistor 20 and the second transistor 30 .

[0024] For example, Figure 1 As shown, the display panel 100 includes a display area AA and a non-display area NAA, and the non-display area NAA is located on at least one side of the display area AA. Figure 1 Take the non-display area NAA located on one side of the display area AA as an example for explanation, wherein the driving circuit 50 is located in the non-display area NAA, and the pixel circuit ( Figure 1 The pixel circuit (not shown) provides a driving signal so that the pixel circuit drives the light-emitting element located in the same sub-pixel to emit light, thereby realizing the display of the display panel 100.

[0025] It should be noted that in the present application, the first transistor 20 and the second transistor 30 can be transistors in a driving circuit, that is, the driving circuit 50 includes the first transistor 20 or the second transistor 30; in addition, the first transistor 20 and the second transistor 30 can be transistors in a pixel circuit, that is, the pixel circuit includes the first transistor 20 or the second transistor 30. If the second transistor 30 is located in the pixel circuit, it can be a driving transistor or a switching transistor.

[0026] The concentrations defined in this application, unless otherwise specified, are all atomic concentrations, that is, the atomic content per unit area.

[0027] For example, Figure 1 As shown, the driving circuit 50 includes a first transistor 20 and a second transistor 30. The first transistor 20 can be a bottom-gate transistor or a top-gate transistor. Figure 1 Take the first transistor 20 as a top-gate transistor as an example, that is, the first gate 22 is located on the side of the first active layer 21 away from the substrate 10. In addition, the second insulating layer 41 is located on the side of the first gate 22 away from the substrate 10, the second active layer 31 is located on the side of the second insulating layer 41 away from the substrate 10, the first insulating layer 40 is located on the side of the second active layer away from the substrate 10, the second gate 32 is located on the side of the first insulating layer 40 away from the substrate 10, the first source 23, the first drain 24, the second source 33 and the second drain 34 are all located on the side of the second gate 32 away from the substrate 10, and are insulated from the second gate 32, wherein the first source 23, the first drain 24, the second source 33 and the second drain 34 are arranged in the same layer, so that the process steps can be simplified. In addition, the first active layer 21 in the first transistor 20 includes silicon, which may be polysilicon, that is, the first active layer 21 is a polysilicon active layer, for example, a low temperature polysilicon (LTPS) active layer. The second active layer 31 in the second transistor 30 includes an oxide semiconductor, that is, the second active layer 31 is an oxide semiconductor active layer, for example, an IGZO active layer. Low temperature polysilicon thin film transistors have the advantages of high carrier mobility, fast response, and low power consumption, and oxide semiconductor thin film transistors have the advantage of low leakage current. When the driving circuit 50 includes the first transistor 20 and the second transistor 30, the driving circuit 50 takes into account the advantages of high carrier mobility, fast response, low power consumption and low leakage current, thereby ensuring that the driving circuit 50 has good performance and improving the display performance of the display panel 100.

[0028] Furthermore, in this embodiment, the concentration of oxygen in the first insulating layer 40 is less than the concentration of oxygen in the second insulating layer 41. On the one hand, by appropriately reducing the concentration of oxygen in the first insulating layer 40, it is avoided that when the first insulating layer 40 is used as a gate insulating layer, the bonds on the oxygen are dangling during the film formation process, thereby preventing the existence of defects from affecting the stability of the second transistor 30; on the other hand, by appropriately increasing the concentration of oxygen in the second insulating layer 41, oxygen is supplemented for the second active layer 31 containing an oxide semiconductor, thereby ensuring the normal function of the second active layer 31. In other words, in this embodiment, by setting the concentration of oxygen in the first insulating layer 40 to be less than the concentration of oxygen in the second insulating layer 41, the stability of the second transistor 30 is improved while not affecting the normal function of the second transistor 30, thereby ensuring the good performance of the driving circuit 50.

[0029] It should be noted that the first insulating layer 40 is located on the side of the second active layer 31 away from the base substrate 10, and is located between the second gate 32 and the second active layer 31, and the second insulating layer 41 is located on the side of the second active layer 31 facing the base substrate 10. The first insulating layer 40 and the second insulating layer 41 may be arranged in contact with the second active layer 31, for example, see Figure 1 ; It is also possible that the first insulating layer 40 and / or the second insulating layer 41 are not in direct contact with the second active layer 31, that is, without affecting the performance of the second transistor 30, other insulating layers are arranged between the first insulating layer 40 and the second active layer 31, and / or other insulating layers are arranged between the second insulating layer 41 and the second active layer 31. This embodiment does not specifically limit this.

[0030] In summary, the display panel provided by the embodiment of the present invention includes a first crystal and a second transistor, the first active layer of the first transistor includes silicon, the second active layer of the second transistor includes an oxide semiconductor, the first insulating layer is located on the side of the second active layer away from the substrate, and the second insulating layer is located on the side of the second active layer close to the substrate, and the concentration of oxygen in the first insulating layer is set to be less than the concentration of oxygen in the second insulating layer, that is, the concentration of oxygen in the first insulating layer is appropriately reduced to avoid defects in the first insulating layer from affecting the second active layer; at the same time, the concentration of oxygen in the second insulating layer is appropriately increased to ensure the normal function of the second active layer. In this way, the stability of the second transistor is improved, and the performance of the driving circuit is ensured to be good.

[0031] Optionally, the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40 is A, and the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer 41 is B, wherein A<B.

[0032] Among them, the first insulating layer 40 and the second insulating layer 41 both include oxygen elements and silicon elements, for example, they can be silicon oxide, but this embodiment does not specifically limit the materials of the first insulating layer 40 and the second insulating layer 41. Those skilled in the art can choose according to actual conditions, as long as the first insulating layer 40 and the second insulating layer 41 both include oxygen elements and silicon elements.

[0033] Because the oxygen atoms and silicon atoms in the first insulating layer 40 and the second insulating layer 41 need to form bonds, this embodiment can reduce the phenomenon of dangling bonds in the oxygen element in the first insulating layer 40 during the film formation process by setting the concentration ratio of the oxygen element to the silicon element in the first insulating layer 40 to be appropriately reduced, thereby ensuring the stability of the second transistor 30 and avoiding the phenomenon of dangling bonds in the oxygen element becoming more serious when the concentration of the oxygen element is relatively large compared with the concentration of the silicon element, resulting in an increase in defects and the capture of carriers in the second transistor 30, thereby avoiding the problem of affecting the stability of the second transistor 30.

[0034] Optionally, the first insulating layer 40 includes silicon oxide SiO x The second insulating layer 41 includes silicon oxide SiO y , where x is the ratio of the number of oxygen atoms to the number of silicon atoms in the first insulating layer 40, y is the ratio of the number of oxygen atoms to the number of silicon atoms in the second insulating layer 41, and x<y. That is, when both the first insulating layer 40 and the second insulating layer 41 include silicon oxide, by setting the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40 to be appropriately reduced, the phenomenon of dangling bonds in the oxygen element in the first insulating layer 40 during the film formation process can be reduced, the stability of the second transistor 30 is ensured, and the phenomenon of dangling bonds in the oxygen element is avoided to be more serious when the concentration of oxygen element is relatively large to the concentration of silicon element, resulting in an increase in defects, and the capture of carriers in the second transistor 30, thereby avoiding the problem of affecting the stability of the second transistor 30.

[0035] Optional, Figure 2 is a schematic diagram of the structure of another display panel provided by an embodiment of the present invention, such as Figure 2 As shown, the pixel circuit 60 further includes a third transistor 70, the third transistor 70 includes a third active layer 71, a third source 73, a third drain 74 and a fourth gate 72, the third active layer 71 includes an oxide semiconductor; the display panel 100 further includes a fourth insulating layer 43 and a fifth insulating layer 44, the fourth insulating layer 43 is located on the side of the third active layer 71 away from the base substrate 10, and is located between the third active layer 71 and the fourth gate 72, and the fifth insulating layer 44 is located on the side of the third active layer 71 toward the base substrate 10; wherein the concentration of oxygen in the fourth insulating layer 43 is less than the concentration of oxygen in the fifth insulating layer 44. Figure 4The pixel circuit 60 including the first transistor 20 is taken as an example for description.

[0036] For example, Figure 2 As shown, the display panel 100 includes a display area AA and a non-display area NAA, the driving circuit 50 is located in the non-display area NAA, and the pixel circuit 60 is located in the display area AA. The pixel circuit 60 includes a first transistor 20 and a third transistor 70, and the third active layer 71 in the third transistor 70 includes an oxide semiconductor, that is, the third active layer 71 is an oxide semiconductor active layer, for example, an IGZO active layer. The leakage current of the oxide semiconductor thin film transistor is very small, which can ensure that the leakage current is small during the operation of the pixel circuit 60; and because the first active layer 21 in the first transistor 20 contains silicon, it can be selected as polysilicon, that is, the first active layer 21 is a polysilicon active layer, for example, a low temperature polysilicon (LTPS) active layer, and the low temperature polysilicon thin film transistor has the advantages of high carrier mobility, fast response, and low power consumption, so when the pixel circuit 60 includes the first transistor 20 and the third transistor 70, the pixel circuit 60 takes into account the advantages of high carrier mobility, fast response, low power consumption and low leakage current, ensuring that the pixel circuit 60 has good performance and improving the display performance of the display panel 100. In addition, in this embodiment, not only the second transistor 30 in the driving circuit 50 is set as an oxide semiconductor transistor, but also the third transistor 70 in the pixel circuit 60 is set as an oxide semiconductor transistor, so that the driving circuit 50 and the pixel circuit 60 are simultaneously guaranteed to have good performance, further improving the display performance of the display panel 100.

[0037] Furthermore, in this embodiment, the concentration of oxygen in the fourth insulating layer 43 is set to be lower than the concentration of oxygen in the fifth insulating layer 44. On the one hand, by appropriately reducing the concentration of oxygen in the fourth insulating layer 43, it is avoided that when the fourth insulating layer 43 is used as a gate insulating layer, the bonds on the oxygen are dangling during the film formation process, thereby preventing the existence of defects from affecting the stability of the third transistor 70; on the other hand, by appropriately increasing the concentration of oxygen in the fifth insulating layer 44, oxygen is supplemented for the third active layer 71 containing an oxide semiconductor, thereby ensuring the normal function of the third active layer 71. In other words, in this embodiment, by making the concentration of oxygen in the fourth insulating layer 43 lower than the concentration of oxygen in the fifth insulating layer 44, the stability of the third transistor 70 is improved while not affecting the normal function of the third transistor 70, thereby ensuring the good performance of the pixel circuit 60.

[0038] It should be noted that the fourth insulating layer 43 can be disposed on the same layer as the first insulating layer 40, and the fifth insulating layer 44 can be disposed on the same layer as the second insulating layer 41; or the fourth insulating layer 43 is not disposed on the same layer as the first insulating layer 40, and the fifth insulating layer 44 is not disposed on the same layer as the second insulating layer 41, wherein: Figure 4 The fourth insulating layer 43 is provided in the same layer as the first insulating layer 40, and the fifth insulating layer 44 is provided in the same layer as the second insulating layer 41. In addition, in this embodiment, by providing the third source 73 and the third drain 74 in the third transistor 70 in the same layer as the second source 33 and the second drain 34 in the second transistor 30 and the first source 23 and the first drain 24 in the first transistor 20, the process steps can be simplified and the manufacturing efficiency of the display panel can be improved.

[0039] On the basis of the above scheme, optionally, the third transistor 70 is a switching transistor of the pixel circuit 60; the difference between the concentration C1 of the oxygen element in the first insulating layer 40 and the concentration C2 of the oxygen element in the second insulating layer 41 is R1=C2-C1, and the difference between the concentration C4 of the oxygen element in the fourth insulating layer 43 and the concentration C5 of the oxygen element in the fifth insulating layer 44 is R2=C5-C4, wherein R1≥R2.

[0040] The pixel circuit 60 is sometimes applied to the low-frequency driving mode. When the pixel circuit 60 is applied to the low-frequency driving mode, the switch transistor in the pixel circuit 60 is in the off state for a long time, while the transistor in the driving circuit 50 is turned on more frequently. By setting the difference between the concentration of oxygen in the first insulating layer 40 and the concentration of oxygen in the second insulating layer 41 in the driving circuit 50 to be appropriately increased, that is, the concentration of oxygen in the first insulating layer 40 is smaller, so as to reduce the influence of defects on the second transistor 30; the concentration of oxygen in the second insulating layer 41 is larger, so as to supplement the second active layer 31 with sufficient oxygen, so that the driving circuit 50 has higher stability. In this way, even if the second transistor 30 in the driving circuit 50 is turned on more frequently, the overall characteristics of the driving circuit 50 can be guaranteed to be good.

[0041] Optionally, the third transistor 70 is a switch transistor of the pixel circuit 60; the concentration of oxygen in the first insulating layer 40 is less than the concentration of oxygen in the fourth insulating layer 43. That is, the concentration of oxygen in the first insulating layer 40 in the second transistor 30 in the driving circuit 50 is lower, which avoids the problem that when the first insulating layer 40 is used as a gate insulating layer, the bonds on the oxygen are dangling during the film formation process, causing defects, thereby avoiding the problem that the existence of defects affects the stability of the second transistor 30, ensuring that the second transistor 30 has high stability, and even if the second transistor 30 in the driving circuit 50 is turned on frequently, the overall characteristics of the driving circuit 50 can be guaranteed to be good.

[0042] It should be noted that when the first insulating layer 40 and the fourth insulating layer 43 are located in the same film layer, for example, different concentrations of oxygen elements can be injected into the first insulating layer 40 and the fourth insulating layer 43 respectively by using an ion implantation process, so that the concentration of oxygen elements in the first insulating layer 40 is less than the concentration of oxygen elements in the fourth insulating layer 43.

[0043] Optionally, the third transistor 70 is a driving transistor of the pixel circuit 60; the difference between the concentration C1 of the oxygen element in the first insulating layer 40 and the concentration C2 of the oxygen element in the second insulating layer 41 is R1=C2-C1, and the difference between the concentration C4 of the oxygen element in the fourth insulating layer 43 and the concentration C5 of the oxygen element in the fifth insulating layer 44 is R2=C5-C4, wherein R1≤R2.

[0044] The pixel circuit 60 is sometimes applied to the low-frequency driving mode. When the pixel circuit 60 is applied to the low-frequency driving mode, the driving transistor in the pixel circuit 60 remains in the turned-on state longer than the transistor in the driving circuit 50. By setting the difference between the concentration of oxygen in the fourth insulating layer 43 and the concentration of oxygen in the fifth insulating layer 44 in the pixel circuit 60 to be larger, that is, the concentration of oxygen in the fourth insulating layer 43 is smaller, so as to reduce the influence of defects on the third transistor 70; the concentration of oxygen in the fifth insulating layer 44 is larger, so as to supplement the third active layer 71 with sufficient oxygen, so as to ensure that the third transistor 70 has high stability. In this way, even if the third transistor 70 in the pixel circuit 60 remains in the turned-on state for a long time, the overall characteristics of the pixel circuit 60 can be guaranteed to be good.

[0045] Optionally, the third transistor 70 is a driving transistor of the pixel circuit 60; the concentration of oxygen in the first insulating layer 40 is greater than the concentration of oxygen in the fourth insulating layer 43. That is, the concentration of oxygen in the fourth insulating layer 43 in the third transistor 70 in the pixel circuit 60 is lower, which avoids the problem that the bonds on the oxygen are dangling during the film formation process when the fourth insulating layer 43 is used as a gate insulating layer, thereby avoiding the problem that the existence of defects affects the stability of the third transistor 70. In this way, the third transistor 70 is ensured to have high stability, and even if the third transistor 70 in the pixel circuit 60 remains in the on state for a longer time, the overall characteristics of the pixel circuit 60 can be ensured to be good. At this time, when the first insulating layer 40 and the fourth insulating layer 43 are located in the same film layer, different concentrations of oxygen can be injected into the first insulating layer 40 and the fourth insulating layer 43 respectively by using an ion implantation process, so that the concentration of oxygen in the first insulating layer 40 is greater than the concentration of oxygen in the fourth insulating layer 43.

[0046] Optional, Figure 3 is a schematic diagram of the structure of another display panel provided by an embodiment of the present invention, such as Figure 3 As shown, the display panel 100 also includes a fourth transistor 80, the fourth transistor 80 includes a fourth active layer 81, a fourth source 83, a fourth drain 84 and a fifth gate 82, the fourth active layer 81 includes an oxide semiconductor; the display panel 100 also includes a sixth insulating layer 45 and a seventh insulating layer 46, the sixth insulating layer 45 is located on the side of the fourth active layer 81 away from the base substrate 10, and is located between the fourth active layer 81 and the fifth gate 82, and the seventh insulating layer 46 is located on the side of the fourth active layer 81 toward the base substrate 10; wherein the concentration of oxygen in the sixth insulating layer 45 is less than the concentration of oxygen in the seventh insulating layer 46.

[0047] It should be noted that when the display panel 100 includes the fourth transistor 80, the fourth transistor 80 may be a transistor in the driving circuit 50 or a transistor in the pixel circuit 60, which is not specifically limited in this embodiment. Figure 3 The description is only made by taking the fourth transistor 80 as an example of a transistor in the pixel circuit 60. In addition, the present embodiment does not limit the specific structure of the pixel circuit 60, for example, it may include seven transistors (7T) or nine transistors (9T).

[0048] Specifically, the pixel circuit 60 also includes a fourth transistor 80, and the fourth active layer 81 in the fourth transistor 80 can also be an oxide semiconductor active layer, for example, an IGZO active layer. That is, the two transistors in the pixel circuit 60 in this embodiment are both oxide semiconductor transistors, which ensures that the leakage current is small during the operation of the pixel circuit 60 and ensures that the pixel circuit 60 has good performance. In addition, in this embodiment, by setting the concentration of oxygen in the sixth insulating layer 45 to be less than the concentration of oxygen in the seventh insulating layer 46, on the one hand, by setting the concentration of oxygen in the sixth insulating layer 45 to be appropriately reduced, it is avoided that when the sixth insulating layer 45 is used as a gate insulating layer, the bonds on the oxygen element are dangling during the film formation process, resulting in defects, and the existence of defects will affect the stability of the fourth transistor 80; on the other hand, by setting the concentration of oxygen in the seventh insulating layer 46 to be appropriately increased, the fourth active layer 41 containing the oxide semiconductor is supplemented with oxygen to ensure that the fourth active layer 41 functions normally. That is to say, in this embodiment, by setting the concentration of oxygen in the sixth insulating layer 45 to be lower than the concentration of oxygen in the seventh insulating layer 46 , the stability of the fourth transistor 80 will be improved without affecting the normal function of the fourth transistor 80 , thereby ensuring good performance of the pixel circuit 60 .

[0049] It should be noted that the sixth insulating layer 45, the fourth insulating layer 43 and the first insulating layer 40 can be located in the same film layer, or in different film layers, or any two insulating layers can be located in the same film layer; similarly, the seventh insulating layer 46, the fifth insulating layer 44 and the second insulating layer 41 can be located in the same film layer, or in different film layers, or any two insulating layers can be located in the same film layer. Figure 3 The sixth insulating layer 45, the fourth insulating layer 43 and the first insulating layer 40 are arranged in the same layer, and the seventh insulating layer 46, the fifth insulating layer 44 and the second insulating layer 41 are arranged in the same layer. In addition, in this embodiment, the fourth source 83 and the fourth drain 84 in the fourth transistor 80, the third source 73 and the third drain 74 in the third transistor 70, the second source 33 and the second drain 34 in the second transistor 30, and the first source 23 and the first drain 24 in the first transistor 20 are arranged in the same layer, which can simplify the process steps and improve the manufacturing efficiency of the display panel.

[0050] On the basis of the above scheme, optionally, the third transistor 70 is a driving transistor of the pixel circuit 60, and the fourth transistor 80 is a switching transistor of the pixel circuit 60, wherein the difference between the concentration C4 of the oxygen element in the fourth insulating layer 43 and the concentration C5 of the oxygen element in the fifth insulating layer 44 is R2=C5-C4, and the difference between the concentration C6 of the oxygen element in the sixth insulating layer 45 and the concentration C7 of the oxygen element in the seventh insulating layer 46 is R3=C7-C6, wherein R2≥R3.

[0051] Generally speaking, in a pixel circuit, the transistor whose gate is connected to the scanning signal or the light-emitting control signal is a switching transistor, and the transistor other than the switching transistor in the pixel circuit is a driving transistor, which is arranged in series on the transmission path of the first power supply signal (PVDD signal) and the second power supply signal (PVEE signal), and the gate of the driving transistor is written with a data signal, and the gate potential of the driving transistor changes as the data signal is written. The pixel circuit is sometimes applied to the low-frequency driving mode. When the pixel circuit is applied to the low-frequency driving mode, the driving transistor in the pixel circuit remains in the turned-on state longer than the switching transistor. In this embodiment, by setting the difference between the concentration of oxygen elements in the fourth insulating layer 43 and the concentration of oxygen elements in the fifth insulating layer 44 in the pixel circuit 60 to be larger, that is, the concentration of oxygen elements in the fourth insulating layer 43 is smaller, so as to reduce the influence of defects on the third transistor 70; the concentration of oxygen elements in the fifth insulating layer 44 is larger, so as to supplement sufficient oxygen elements for the third active layer 71, so as to ensure that the third transistor 70 has a higher stability, so that even if the third transistor 70 in the pixel circuit 60 remains in the turned-on state for a long time, the overall characteristics of the pixel circuit 60 can be ensured to be good.

[0052] Optionally, the third transistor 70 is a driving transistor of the pixel circuit 60, and the fourth transistor 80 is a switching transistor of the pixel circuit 60, wherein the concentration of oxygen in the fourth insulating layer 43 is less than the concentration of oxygen in the sixth insulating layer 45. That is, the concentration of oxygen in the fourth insulating layer 43 of the third transistor 70 in the pixel circuit 60 is lower, which avoids the problem that when the fourth insulating layer 43 is used as a gate insulating layer, the bonds on the oxygen element are dangling during the film formation process, thereby avoiding the problem that the existence of defects affects the stability of the third transistor 70. In this way, the third transistor 70 is ensured to have high stability, and even if the third transistor 70 in the pixel circuit 60 remains in the turned-on state for a long time, the overall characteristics of the pixel circuit 60 can be ensured to be good. Similarly, when the fourth insulating layer 43 and the sixth insulating layer 45 are located in the same film layer, the concentrations of oxygen in the fourth insulating layer 43 and the sixth insulating layer 45 can be different by using an ion implantation process.

[0053] Optional, continue to see Figure 1 The display panel 100 further includes a third insulating layer 42 , which is located on a side of the second gate 32 away from the base substrate 10 ; wherein the concentration of oxygen in the third insulating layer 42 is greater than the concentration of oxygen in the first insulating layer 40 .

[0054] The third insulating layer 42 is an insulating layer on the side of the second gate 32 facing away from the substrate 10. The density of the third insulating layer 42 is improved by appropriately increasing the concentration of oxygen in the third insulating layer 42. In this way, the second transistor 30 is protected by the third insulating layer 42 to prevent external elements such as water, oxygen, and hydrogen from entering the second transistor 30 and affecting the performance of the second transistor 30.

[0055] Optionally, the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40 is A, and the ratio of the concentration of oxygen element to the concentration of silicon element in the third insulating layer 42 is C, wherein A<C. When both the first insulating layer 40 and the second insulating layer 41 include oxygen element and silicon element, the concentration ratio of the oxygen element to the silicon element in the third insulating layer 42 is increased to protect the second transistor 30, and prevent the concentration of oxygen element in the third insulating layer 42 from being too low and the concentration of silicon element from being too high, which results in a decrease in the density of the third insulating layer 42 and affects the ability of the third insulating layer 42 to protect the second transistor 30.

[0056] Optionally, the concentration of oxygen in the third insulating layer 42 is less than the concentration of oxygen in the second insulating layer 41. That is, although the concentration of oxygen in the third insulating layer 42 is greater than the concentration of oxygen in the first insulating layer 40 to protect the second transistor 30, compared with the concentration of oxygen in the second insulating layer 41, the concentration of oxygen in the third insulating layer 42 is still less than the concentration of oxygen in the second insulating layer 414, that is, by setting the concentration of oxygen in the second insulating layer 41 to be greater, oxygen is supplemented for the second active layer 31 containing the oxide semiconductor to ensure the normal function of the second active layer 31.

[0057] Optionally, the concentration ratio of oxygen element to silicon element in the second insulating layer 41 is B, and the concentration ratio of oxygen element to silicon element in the third insulating layer 42 is C, wherein B>C. That is, when both the second insulating layer 41 and the third insulating layer 42 include oxygen element and silicon element, by setting the concentration ratio of oxygen element to silicon element in the second insulating layer 41 to increase, oxygen element is supplemented for the second active layer 31 including the oxide semiconductor, thereby ensuring that the second active layer 31 functions normally.

[0058] Optionally, the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40 is A, the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer 41 is B, and the ratio of the concentration of oxygen element to the concentration of silicon element in the third insulating layer 42 is C, wherein (B-1)≤2(C-1)-(A-1), that is, by setting (B-1)≤2(C-1)-(A-1), the concentration of oxygen element in the first insulating layer 40 can be made smaller than the concentration of silicon element. In this way, the stability of the second transistor 30 can be improved, and defects caused by dangling bonds on the oxygen element during the film formation process when the first insulating layer 40 is used as a gate insulating layer can be avoided, and the presence of defects will affect the stability of the second transistor 30.

[0059] Based on the above scheme, optionally, (B-1)-(C-1)≤1 / 2×[(C-1)-(A-1)].

[0060] In this embodiment, the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40, the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer 41 is set to B, and the ratio of the concentration of oxygen element to the concentration of silicon element in the third insulating layer 42 is set to C to satisfy (B-1)-(C-1)≤1 / 2×[(C-1)-(A-1)]. In this way, the defects caused by dangling bonds on the oxygen element in the first insulating layer 40 during the film formation process can be reduced, thereby avoiding the existence of defects affecting the stability of the second transistor 30; at the same time, the second insulating layer 41 is used to supplement the second active layer 31 containing the oxide semiconductor with oxygen element to ensure the normal function of the second active layer 31; and the density of the third insulating layer 42 is increased by sufficient oxygen element to protect the second transistor 30, thereby further improving the stability of the second transistor 30.

[0061] It is understandable that, since the above example is only described with respect to the setting of the concentration of oxygen in the first insulating layer 40, the second insulating layer 41 and the third insulating layer 42 near the second transistor 30, when the display panel 100 further includes the third transistor 70 and the fourth transistor 80, for example, Figure 3 The fourth insulating layer 43, the fifth insulating layer 44 and the insulating layer 47 on the side of the fourth insulating layer 43 away from the fifth insulating layer 44 are also applicable to the above rules; and the sixth insulating layer 45, the seventh insulating layer 46 and the insulating layer 48 on the side of the sixth insulating layer 45 away from the seventh insulating layer 46 are also applicable to the above rules, which will not be repeated here.

[0062] The above embodiments are all described by taking the case where the second transistor 30 is a top-gate transistor as an example. Optionally, the second transistor 30 may also be a dual-gate transistor. When the second transistor 30 is a dual-gate transistor, in addition to satisfying the rule of oxygen element concentration in the insulating layer in the above embodiments, it may also be individually set according to the characteristics of the dual-gate transistor itself.

[0063] Optional, Figure 4 is a schematic diagram of the structure of another display panel provided by an embodiment of the present invention, such as Figure 4 As shown, the second transistor 30 includes a third gate 35 , and the third gate 35 is located on a side of the second insulating layer 41 facing the base substrate 10 , wherein a thickness H1 of the first insulating layer 40 is smaller than a thickness H2 of the second insulating layer 41 .

[0064] Specifically, the second transistor 30 includes not only the second gate 32, but also the third gate 35, that is, the second transistor 30 is a dual-gate transistor, so that the mobility of the carriers in the second transistor 30 can be enhanced, and the response capability of the second transistor 30 can be enhanced. It should be noted that since the second transistor 30 can be an oxide semiconductor transistor, generally speaking, the volume of oxide semiconductor transistors is relatively large, and setting the second transistor 30 as a dual-gate transistor with a top gate and a bottom gate stack is conducive to reducing the volume of the third transistor 30, thereby reducing the area of ​​the non-display area NAA where the driving circuit 50 is located, and realizing the narrow frame of the display panel 100. In addition, by setting the thickness H1 of the first insulating layer 40 to be less than the thickness H2 of the second insulating layer 41, that is, the thickness of the insulating layer of the main gate is less than the thickness of the insulating layer of the auxiliary gate, the control capability of the main gate over the second transistor 30 is guaranteed.

[0065] When the second transistor 30 includes a third gate 35 , and the third gate 35 is located on the side of the second insulating layer 41 facing the substrate 10 , optionally, in the second insulating layer 41 , the concentration of oxygen elements on the side close to the second active layer 31 is greater than the concentration of oxygen elements on the side away from the second active layer 31 .

[0066] The advantage of such a configuration is that, on the one hand, the second active layer 31 including the oxide semiconductor is supplemented with sufficient oxygen by the larger concentration of oxygen in the second insulating layer 41 near the second active layer 31, thereby ensuring the normal function of the second active layer 31; on the other hand, the second insulating layer 41 is prevented from having dangling bonds on the oxygen element in the film formation process, thereby preventing the existence of defects from affecting the stability of the second transistor 30. In this way, the second transistor 30 is ensured to have good performance.

[0067] On the basis of the above scheme, optional, Figure 5 is a schematic diagram of the structure of another display panel provided by an embodiment of the present invention, such as Figure 5 As shown, the second insulating layer 41 includes a first sub-insulating layer 411 and a second sub-insulating layer 412, the second sub-insulating layer 412 is located on the side of the first sub-insulating layer 411 away from the second active layer 31, and the first sub-insulating layer 411 and the second sub-insulating layer 412 both include silicon oxide, wherein the concentration of oxygen in the first sub-insulating layer 411 is greater than the concentration of oxygen in the second sub-insulating layer 412.

[0068] In this embodiment, the first sub-insulating layer 411 and the second sub-insulating layer 412 both include silicon oxide, but the concentrations of oxygen in the first sub-insulating layer 411 and the second sub-insulating layer 412 are different, for example, the concentration of oxygen in the first sub-insulating layer 411 is greater than that in the second sub-insulating layer 412, that is, the concentration of oxygen in the first sub-insulating layer 411 is appropriately increased to supplement the second active layer 31 including the oxide semiconductor with sufficient oxygen to ensure the normal function of the second active layer 31; at the same time, the concentration of oxygen in the second sub-insulating layer 412 is appropriately reduced to avoid defects caused by dangling bonds on the oxygen in the second sub-insulating layer 412 during the film formation process, thereby avoiding the problem that the defects affect the stability of the second transistor 30. In this way, the second transistor 30 is ensured to have good performance.

[0069] On the basis of the above solution, optionally, the concentration of hydrogen in the second sub-insulating layer 412 is greater than the concentration of hydrogen in the first sub-insulating layer 411. The hydrogen in the second sub-insulating layer 412 is used to repair the defects caused by the dangling bonds on the oxygen in the second sub-insulating layer 412, thereby ensuring the stability of the second transistor 30 and further improving the performance of the second transistor 30.

[0070] It should be noted that Figure 5 When only the second transistor 30 is a dual-gate transistor, the relationship between the thickness H1 of the first insulating layer 40 and the thickness H2 of the second insulating layer 41, the change in the concentration of the oxygen element in the second insulating layer 41 are described, and when the second insulating layer 41 includes the first sub-insulating layer 411 and the second sub-insulating layer 412, the materials of the first sub-insulating layer 411 and the second sub-insulating layer 412 and the relationship between the concentration of the oxygen element are defined, and the relationship between the concentration of the hydrogen element in the first sub-insulating layer 411 and the second sub-insulating layer 412 is defined. It can be understood that when the third transistor 70 is a dual-gate transistor, the fourth insulating layer 43 and the fifth insulating layer 44 also satisfy the above relationship; when the fourth transistor 80 is a dual-gate transistor, the sixth insulating layer 45 and the seventh insulating layer 46 also satisfy the above relationship, which will not be repeated here.

[0071] On the basis of the above solutions, optional Figure 6 is a schematic diagram of the structure of another display panel provided by an embodiment of the present invention, such as Figure 6As shown, the substrate substrate 10 in the embodiment of the present invention may be a flexible substrate substrate or a rigid substrate substrate, which is not limited in the embodiment of the present invention. When the substrate substrate 10 is a flexible substrate, the substrate substrate 10 may include a polyimide substrate to ensure that the flexible substrate has good high temperature resistance and good insulation performance; wherein the substrate substrate 10 may include a layer of polyimide substrate or two layers of polyimide substrate, which is also not limited in the embodiment of the present invention. When the substrate substrate 10 includes a layer of polyimide substrate, the film structure of the substrate substrate 10 is simple, the preparation process is simple, and it is conducive to achieving the requirements of the thin and light design of the substrate substrate 10 and the entire display panel. When the substrate substrate 10 includes at least two layers of polyimide substrate, a buffer layer is also provided between the polyimide substrates to enhance the adhesion between the polyimide substrates; when the substrate substrate 10 is formed by stacking the polyimide substrate and the buffer layer, it can prevent some impurities and / or water vapor from penetrating from the bottom substrate and affecting the first active layer 21. In addition, since the polyimide substrate is generally prepared on a rigid substrate, after the drive circuit 50, the pixel circuit and the light-emitting element are prepared on the base substrate 10, the laser stripping technology is generally used to strip and remove the rigid substrate, and the polyimide substrate may be damaged when the laser stripping is used to remove the rigid substrate. Therefore, when the base substrate 10 includes at least two polyimide substrates, for example, including a first polyimide substrate and a second polyimide substrate, a first buffer layer is provided between the first polyimide substrate and the second polyimide substrate, and a second buffer layer is provided between the second polyimide substrate and the first active layer 21, the first polyimide substrate is prepared on the rigid substrate, and the drive circuit 50 and the pixel circuit are prepared on the second buffer layer. Even if the first polyimide substrate may be damaged when the rigid substrate is removed by laser stripping, the integrity of the second polyimide substrate and the integrity of the second buffer layer on the second polyimide substrate can still be guaranteed, and the integrity of the entire display panel can be guaranteed. Figure 6 Take the base substrate 10 as a flexible substrate, where the base substrate 10 includes a first flexible substrate 11 and a second flexible substrate 13 of polyimide, a first buffer layer 12 between the first flexible substrate 11 and the second flexible substrate 13, and a second buffer layer 14 between the second flexible substrate 13 and the first active layer 21 as an example.

[0072] Based on the same inventive concept, an embodiment of the present invention further provides a display panel. Figure 7 is a schematic diagram of the structure of another display panel provided by an embodiment of the present invention, such as Figure 7As shown, the display panel 100 provided by the embodiment of the present invention includes a substrate 10; a first transistor 20 and a second transistor 30, the first transistor 20 and the second transistor 30 are formed on the substrate 10, the first transistor 20 includes a first active layer 21, a first gate 22, a first source 23 and a first drain 24, the first active layer 21 includes silicon; the second transistor 30 includes a second active layer 31, a second gate 32, a third gate 35, a second source 33 and a second drain 34, the second active layer 31 includes an oxide semiconductor; the second active layer 31 is located at the first active layer 21, the second gate 32, the third gate 35, the second source 33 and the second drain 34, the second active layer 31 includes an oxide semiconductor; the second active layer 31 is located at the first active layer 21, the first gate 22, the first source 23 and the first drain 24, the first active layer 21 includes silicon; the second transistor 30 includes a second active layer 31, a second gate 32, a third gate 35, a second source 33 and a ... The active layer 21 is away from the side of the substrate 10; the first insulating layer 40 and the second insulating layer 41, the first insulating layer 40 and the second insulating layer 41 are respectively located on both sides of the second active layer 31, the first insulating layer 40 is located between the second gate 32 and the second active layer 31, the second insulating layer 41 is located between the third gate 35 and the second active layer 31, and the thickness H1 of the first insulating layer 40 is less than the thickness H2 of the second insulating layer 41; wherein the concentration of oxygen in the first insulating layer 40 is less than the concentration of oxygen in the second insulating layer 41; the display panel 100 includes a pixel circuit ( Figure 7 ) and a driving circuit 50 for providing a driving signal to the pixel circuit, wherein the driving circuit 50 includes at least one second transistor 30, wherein: Figure 7 The following description will be made by taking the driving circuit 50 including the first transistor 20 and the second transistor 30 as an example.

[0073] For example, see Figure 7 When the second gate 32 is the main gate of the second transistor 30 and the top gate of the second transistor 30, the thickness H1 of the first insulating layer 40 corresponding to the main gate is set to be smaller than the thickness H2 of the second insulating layer 41 corresponding to the auxiliary gate to ensure the control ability of the main gate over the second transistor 30.

[0074] For example, Figure 8 is a schematic diagram of the structure of another display panel provided by an embodiment of the present invention, such as Figure 8 As shown, when the second gate 32 is the main gate of the second transistor 30 and the bottom gate of the second transistor 30, the thickness H1 of the first insulating layer 40 corresponding to the main gate is set to be smaller than the thickness H2 of the second insulating layer 41 corresponding to the auxiliary gate to ensure the control ability of the main gate over the second transistor 30.

[0075] The display panel provided by the embodiment of the present invention sets the oxygen concentration of the first insulating layer (i.e., the insulating layer of the main gate) to be lower than the oxygen concentration of the second insulating layer (the insulating layer of the auxiliary gate), that is, the oxygen concentration of the first insulating layer is appropriately reduced to avoid the influence of defects in the first insulating layer on the second active layer; the oxygen concentration of the second insulating layer is appropriately increased to ensure the normal function of the second active layer, thereby improving the stability of the second transistor and ensuring good performance of the driving circuit; at the same time, by setting the thickness of the first insulating layer (i.e., the insulating layer of the main gate) to be lower than the thickness of the second insulating layer (the insulating layer of the auxiliary gate), the control ability of the main gate over the second transistor is guaranteed.

[0076] Based on the same inventive concept, an embodiment of the present invention further provides a display device, which includes any display panel provided in the above embodiments. Fig. 9 As shown, the display device 1000 includes a display panel 100. Therefore, the display device also has the beneficial effects of the display panel in the above embodiment, and the similarities can be understood by referring to the above explanation of the display panel, which will not be repeated below.

[0077] The display device 1000 provided in the embodiment of the present invention can be Fig. 9 The mobile phone shown can also be any electronic product with a display function, including but not limited to the following categories: televisions, laptops, desktop displays, tablet computers, digital cameras, smart bracelets, smart glasses, car displays, industrial control equipment, medical display screens, touch interactive terminals, etc. The embodiments of the present invention do not specifically limit this.

[0078] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A display panel, characterized in that: include substrate substrate; a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, the first transistor comprises a first active layer, a first gate, a first source and a first drain, the first active layer comprises silicon; the second transistor comprises a second active layer, a second gate, a second source and a second drain, the second active layer comprises an oxide semiconductor; the second active layer is located on a side of the first active layer away from the substrate; a first insulating layer and a second insulating layer, wherein the first insulating layer is located on a side of the second active layer away from the substrate and between the second gate and the second active layer, and the second insulating layer is located on a side of the second active layer facing the substrate; wherein, The concentration of oxygen in the first insulating layer is lower than the concentration of oxygen in the second insulating layer; The display panel includes a pixel circuit and a driving circuit providing a driving signal to the pixel circuit, wherein the driving circuit includes the second transistor and the pixel circuit includes the first transistor or the driving circuit includes the first transistor.

2. The display panel according to claim 1, characterized in that: The ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer is A, and the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer is B, wherein: A<B.

3. The display panel according to claim 1, characterized in that: The first insulating layer includes silicon oxide SiO x The second insulating layer includes silicon oxide SiO y , wherein x is the ratio of the number of oxygen atoms to the number of silicon atoms in the first insulating layer, y is the ratio of the number of oxygen atoms to the number of silicon atoms in the second insulating layer, and x<y.

4. The display panel according to claim 1, characterized in that: The second transistor includes a third gate, and the third gate is located on a side of the second insulating layer facing the substrate, wherein: The thickness of the first insulating layer is smaller than the thickness of the second insulating layer.

5. The display panel according to claim 4, characterized in that: In the second insulating layer, a concentration of oxygen on a side close to the second active layer is greater than a concentration of oxygen on a side away from the second active layer.

6. The display panel according to claim 5, characterized in that: The second insulating layer includes a first sub-insulating layer and a second sub-insulating layer, the second sub-insulating layer is located on a side of the first sub-insulating layer away from the second active layer, and the first sub-insulating layer and the second sub-insulating layer both include silicon oxide, wherein: A concentration of oxygen element in the first sub-insulating layer is greater than a concentration of oxygen element in the second sub-insulating layer.

7. The display panel according to claim 6, characterized in that: A concentration of hydrogen elements in the second sub-insulating layer is greater than a concentration of hydrogen elements in the first sub-insulating layer.

8. The display panel according to claim 1, characterized in that: The display panel further includes a third insulating layer, and the third insulating layer is located on a side of the second gate away from the base substrate; wherein, A concentration of oxygen element in the third insulating layer is greater than a concentration of oxygen element in the first insulating layer.

9. The display panel according to claim 8, characterized in that: The ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer is A, and the ratio of the concentration of oxygen element to the concentration of silicon element in the third insulating layer is C, wherein: A<C.

10. The display panel according to claim 8, characterized in that: A concentration of oxygen element in the third insulating layer is lower than a concentration of oxygen element in the second insulating layer.

11. The display panel according to claim 8, characterized in that: The ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer is B, and the ratio of the concentration of oxygen element to the concentration of silicon element in the third insulating layer is C, wherein: B>C.

12. The display panel according to claim 8, characterized in that: The ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer is A, the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer is B, and the ratio of the concentration of oxygen element to the concentration of silicon element in the third insulating layer is C, wherein, (B-1)≤2(C-1)-(A-1).

13. The display panel according to claim 12, characterized in that: (B-1)-(C-1)≤1 / 2×[(C-1)-(A-1)].

14. The display panel according to claim 1, characterized in that: The pixel circuit further includes a third transistor, the third transistor includes a third active layer, a third source electrode, a third drain electrode and a fourth gate electrode, and the third active layer includes an oxide semiconductor; The display panel further includes a fourth insulating layer and a fifth insulating layer, wherein the fourth insulating layer is located on a side of the third active layer away from the base substrate and between the third active layer and the fourth gate, and the fifth insulating layer is located on a side of the third active layer facing the base substrate; wherein, A concentration of oxygen element in the fourth insulating layer is lower than a concentration of oxygen element in the fifth insulating layer.

15. The display panel according to claim 14, characterized in that: The third transistor is a switch transistor of the pixel circuit; The difference between the concentration C1 of the oxygen element in the first insulating layer and the concentration C2 of the oxygen element in the second insulating layer is R1=C2-C1, and the difference between the concentration C4 of the oxygen element in the fourth insulating layer and the concentration C5 of the oxygen element in the fifth insulating layer is R2=C5-C4, wherein, R1≥R2.

16. The display panel according to claim 14, characterized in that: The third transistor is a switch transistor of the pixel circuit; A concentration of oxygen elements in the first insulating layer is lower than a concentration of oxygen elements in the fourth insulating layer.

17. The display panel according to claim 14, characterized in that: The third transistor is a driving transistor of the pixel circuit; The difference between the concentration C1 of the oxygen element in the first insulating layer and the concentration C2 of the oxygen element in the second insulating layer is R1=C2-C1, and the difference between the concentration C4 of the oxygen element in the fourth insulating layer and the concentration C5 of the oxygen element in the fifth insulating layer is R2=C5-C4, wherein, R1≤R2.

18. The display panel according to claim 14, characterized in that: The third transistor is a driving transistor of the pixel circuit; A concentration of oxygen elements in the first insulating layer is greater than a concentration of oxygen elements in the fourth insulating layer.

19. The display panel according to claim 14, characterized in that: The display panel further includes a fourth transistor, the fourth transistor including a fourth active layer, a fourth source electrode, a fourth drain electrode and a fifth gate electrode, the fourth active layer including an oxide semiconductor; The display panel further includes a sixth insulating layer and a seventh insulating layer, wherein the sixth insulating layer is located on a side of the fourth active layer away from the base substrate and between the fourth active layer and the fifth gate, and the seventh insulating layer is located on a side of the fourth active layer toward the base substrate; wherein, A concentration of oxygen elements in the sixth insulating layer is lower than a concentration of oxygen elements in the seventh insulating layer.

20. The display panel according to claim 19, characterized in that: The third transistor is a driving transistor of the pixel circuit, and the fourth transistor is a switching transistor of the pixel circuit, wherein: The difference between the concentration C4 of the oxygen element in the fourth insulating layer and the concentration C5 of the oxygen element in the fifth insulating layer is R2=C5-C4, and the difference between the concentration C6 of the oxygen element in the sixth insulating layer and the concentration C7 of the oxygen element in the seventh insulating layer is R3=C7-C6, wherein, R2≥R3.

21. The display panel according to claim 19, characterized in that: The third transistor is a driving transistor of the pixel circuit, and the fourth transistor is a switching transistor of the pixel circuit, wherein: A concentration of oxygen elements in the fourth insulating layer is lower than a concentration of oxygen elements in the sixth insulating layer.

22. A display panel, characterized in that: include substrate substrate; a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, the first transistor comprises a first active layer, a first gate, a first source and a first drain, the first active layer comprises silicon; the second transistor comprises a second active layer, a second gate, a third gate, a second source and a second drain, the second active layer comprises an oxide semiconductor; the second active layer is located on a side of the first active layer away from the substrate; a first insulating layer and a second insulating layer, wherein the first insulating layer and the second insulating layer are respectively located on both sides of the second active layer, the first insulating layer is located between the second gate and the second active layer, the second insulating layer is located between the third gate and the second active layer, and the thickness of the first insulating layer is less than the thickness of the second insulating layer; wherein, The concentration of oxygen in the first insulating layer is lower than the concentration of oxygen in the second insulating layer; The display panel includes a pixel circuit and a driving circuit providing a driving signal to the pixel circuit, wherein the driving circuit includes the second transistor and the pixel circuit includes the first transistor or the driving circuit includes the first transistor.

23. A display device, characterized in that: A display panel comprising any one of claims 1-22.

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