Display panel and manufacturing method thereof, and display device

Abstract

A display panel and a manufacturing method, and a display device. The display panel includes: a substrate (200) and a plurality of sub-pixels located on one side of the substrate (200). At least one of the plurality of sub-pixels includes: a light-emitting element (220), including a first electrode (226), a light-emitting functional layer (227), and a second electrode (228) stacked in sequence, wherein the first electrode (226) is closer to the substrate (200) than the second electrode (228); a metal reflective layer (222), located between the substrate (200) and the first electrode (226); a silicon nitride layer (224), located between the first electrode (226) and the metal reflective layer (222), wherein the silicon nitride layer (224) is in direct contact with the metal reflective layer (222). The silicon nitride layer (224) includes a first via hole (224a), and the first electrode (226) and the metal reflective layer (222) are electrically connected through the first via hole (224a); a driving circuit is located between the substrate (200) and the metal reflective layer (222), and the driving circuit includes a driving transistor (T) and a storage capacitor, and the driving transistor includes a source (S), a drain (D) and a gate (G), one of the source (S) and the drain (D) is electrically connected to the metal reflective layer (222), and the gate (G) is electrically connected to the storage capacitor, and the storage capacitor is configured to store a data signal.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a display panel and a method for manufacturing the same, and a display device. Background Art

[0002] Organic Light-Emitting Diode (OLED) display panels have the advantages of thin thickness, light weight, wide viewing angle, active light emission, continuously adjustable light color, low cost, fast response speed, low energy consumption, low driving voltage, wide operating temperature range, simple production process, high luminous efficiency and flexible display. They are increasingly used in display fields such as mobile phones, tablet computers, and digital cameras. Summary of the invention

[0003] At least one embodiment of the present disclosure provides a display panel, which includes: a base substrate and a plurality of sub-pixels located on one side of the base substrate; at least one of the plurality of sub-pixels includes: a light-emitting element, including a first electrode, a light-emitting functional layer, and a second electrode stacked in sequence, the first electrode being closer to the base substrate than the second electrode; a metal reflective layer located between the base substrate and the first electrode; a silicon nitride layer located between the first electrode and the metal reflective layer, the silicon nitride layer being in direct contact with the metal reflective layer, the silicon nitride layer including a first via hole, the first electrode and the metal reflective layer being electrically connected through the first via hole; a driving circuit located between the base substrate and the metal reflective layer, the driving circuit including a driving transistor and a storage capacitor, the driving transistor including a source, a drain, and a gate, one of the source and the drain being electrically connected to the metal reflective layer, the gate being electrically connected to the storage capacitor, and the storage capacitor being configured to store a data signal.

[0004] For example, in the display panel provided in some embodiments of the present disclosure, the display panel according to claim 1, wherein the deposition temperature of the silicon nitride layer is 70-100 degrees Celsius.

[0005] For example, in the display panel provided in some embodiments of the present disclosure, the deposition temperature of the silicon nitride layer is 80-85 degrees Celsius.

[0006] For example, in the display panel provided in some embodiments of the present disclosure, the thickness of the silicon nitride layer is

[0007] For example, in the display panel provided in some embodiments of the present disclosure, the material of the metal reflective layer includes a metal material containing silver or aluminum.

[0008] For example, in the display panel provided in some embodiments of the present disclosure, the thickness of the metal reflective layer is

[0009] For example, in the display panel provided in some embodiments of the present disclosure, the first electrode is a transparent electrode.

[0010] For example, in the display panel provided in some embodiments of the present disclosure, the material of the first electrode includes at least one of indium tin oxide (ITO), zinc tin oxide (IZO), indium gallium tin oxide (IGZO), and indium zinc tin oxide (IZTO).

[0011] For example, in the display panel provided in some embodiments of the present disclosure, the thickness of the first electrode is

[0012] For example, in the display panel provided in some embodiments of the present disclosure, the surface roughness of the structure including the metal reflective layer, the silicon nitride layer and the first electrode is less than 3.0 nm.

[0013] For example, in the display panel provided in some embodiments of the present disclosure, the light-emitting functional layer includes one of an organic light-emitting functional layer, an inorganic light-emitting functional layer and a quantum dot light-emitting functional layer.

[0014] For example, in the display panel provided in some embodiments of the present disclosure, the second electrode is a transparent electrode.

[0015] For example, in the display panel provided in some embodiments of the present disclosure, the material of the second electrode includes at least one of indium tin oxide (ITO), zinc tin oxide (IZO), indium gallium tin oxide (IGZO), and indium zinc tin oxide (IZTO).

[0016] For example, the display panel provided in some embodiments of the present disclosure further includes: a first encapsulation layer, a color filter layer, a second encapsulation layer and a cover plate stacked in sequence, and arranged on a side of the light-emitting element away from the base substrate.

[0017] For example, in the display panel provided in some embodiments of the present disclosure, the light-emitting element is configured to emit white light, and the color filter layer includes a red filter unit, a green filter unit, and a blue filter unit.

[0018] For example, in the display panel provided in some embodiments of the present disclosure, the base substrate is a silicon-based base substrate.

[0019] For example, the display panel provided in some embodiments of the present disclosure further includes: a second via hole; wherein one of the source electrode and the drain electrode is electrically connected to the metal reflective layer through the second via hole.

[0020] For example, the display panel provided in some embodiments of the present disclosure further includes: an anti-oxidation layer; wherein the anti-oxidation layer is located between the base substrate and the metal reflective layer, and the anti-oxidation layer is in direct contact with the metal reflective layer.

[0021] At least one embodiment of the present disclosure further provides a display device, which includes the display panel provided by any embodiment of the present disclosure.

[0022] At least one embodiment of the present disclosure also provides a method for manufacturing a display panel, comprising: providing a base substrate, on which a driving circuit is formed, the driving circuit comprising a driving transistor and a storage capacitor, the driving transistor comprising a source, a drain and a gate, the gate being electrically connected to the storage capacitor; forming a metal reflective layer on a side of the driving circuit away from the base substrate, and electrically connecting one of the source and the drain to the metal reflective layer; forming a silicon nitride layer on a side of the metal reflective layer away from the base substrate, and forming a first via hole in the silicon nitride layer; and forming a light-emitting element on a side of the silicon nitride layer away from the base substrate, the light-emitting element comprising a first electrode, a light-emitting functional layer and a second electrode stacked in sequence, and electrically connecting the first electrode to the metal reflective layer through the first via hole.

[0023] For example, the manufacturing method provided in some embodiments of the present disclosure further includes: before forming a metal reflective layer on a side of the driving circuit away from the base substrate, forming a second via hole on a side of the driving circuit away from the base substrate; wherein one of the source and the drain is electrically connected to the metal reflective layer through the second via hole.

[0024] For example, the manufacturing method provided in some embodiments of the present disclosure further includes: sequentially forming a first encapsulation layer, a color filter layer, a second encapsulation layer and a cover plate on a side of the light-emitting element away from the base substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, but are not intended to limit the present disclosure.

[0026] Figure 1 A schematic diagram of a partial structure of a display panel provided in at least one embodiment of the present disclosure;

[0027] Figure 2 A schematic diagram of a partial structure of another display panel provided in at least one embodiment of the present disclosure;

[0028] Figure 3A schematic diagram of a circuit principle of a display panel provided in some embodiments of the present disclosure;

[0029] Figure 4 A circuit diagram of a specific implementation example of a voltage control circuit and a pixel circuit in a display panel provided in some embodiments of the present disclosure;

[0030] Figure 5 A schematic block diagram of a display device provided for at least one embodiment of the present disclosure; and

[0031] Figure 6 A flow chart of a method for manufacturing a display panel provided in at least one embodiment of the present disclosure. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0033] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0034] The present disclosure is described below through several specific embodiments. In order to keep the following description of the embodiments of the present disclosure clear and concise, the detailed description of known functions and known components (elements) may be omitted. When any part (element) of the embodiments of the present disclosure appears in more than one figure, the part (element) is represented by the same or similar reference numeral in each figure.

[0035] OLED display panels can be generally divided into bottom emission type and top emission type according to the different directions of light emission from OLED. OLED display panels generally use active matrix driving mode to drive OLED to emit light. In this case, compared with bottom emission type OLED display panels, top emission type OLED display panels can effectively improve the aperture ratio, which is conducive to achieving high brightness and high resolution display.

[0036] Silicon-based OLED display devices are different from traditional OLED display devices that use amorphous silicon, microcrystalline silicon or polycrystalline silicon on a glass substrate. They use single-crystal silicon chips as the substrate and the pixel size can be 1 / 10 of the pixel size of traditional display devices, for example, less than 100 microns.

[0037] At least one embodiment of the present disclosure provides a display panel, which includes: a substrate and a plurality of sub-pixels located on one side of the substrate. At least one of the plurality of sub-pixels includes: a light-emitting element, including a first electrode, a light-emitting functional layer, and a second electrode stacked in sequence, the first electrode being closer to the substrate than the second electrode; a metal reflective layer, located between the substrate and the first electrode; a silicon nitride layer, located between the first electrode and the metal reflective layer, the silicon nitride layer being in direct contact with the metal reflective layer, the silicon nitride layer including a first via hole, the first electrode and the metal reflective layer being electrically connected through the first via hole; a driving circuit, located between the substrate and the metal reflective layer, the driving circuit including a driving transistor and a storage capacitor, the driving transistor including a source, a drain, and a gate, one of the source and the drain being electrically connected to the metal reflective layer, the gate being electrically connected to the storage capacitor, and the storage capacitor being configured to store a data signal.

[0038] Some embodiments of the present disclosure also provide a manufacturing method and a display device corresponding to the above-mentioned display panel.

[0039] The structure of the display panel including the metal reflective layer, the silicon nitride layer and the first electrode provided in at least one embodiment of the present disclosure has a low surface roughness, which improves the reflectivity of the metal reflective layer, thereby improving the light output efficiency and light output brightness of the light-emitting element, and further improving the display brightness of the display panel.

[0040] Figure 1 A partial structural diagram of a display panel provided by at least one embodiment of the present disclosure. Figure 1 As shown, the display panel includes a substrate 200 and a plurality of sub-pixels located on one side of the substrate 200. For example, the substrate 200 may be a silicon-based substrate, and the embodiments of the present disclosure include but are not limited to this. For example, the semiconductor manufacturing process used by the silicon-based substrate is mature and has stable performance, which is conducive to the manufacture of micro display devices.

[0041] For example, Figure 1As shown, the display panel exemplarily shows three sub-pixels, namely, a red sub-pixel SP1, a green sub-pixel SP2 and a blue sub-pixel SP3. It should be noted that: Figure 1 The number of sub-pixels shown in is schematic, and the embodiments of the present disclosure are not limited to this. In addition, the color of each sub-pixel is also schematic. For example, the multiple sub-pixels may also include yellow sub-pixels, white sub-pixels, etc., and the embodiments of the present disclosure are not limited to this.

[0042] For example, Figure 1 As shown, each sub-pixel includes a light-emitting element 220, and the light-emitting element 220 includes a first electrode 226, a light-emitting functional layer 227, and a second electrode 228 stacked in sequence. Figure 1 As shown, the first electrode 226 of the light emitting element 220 is closer to the base substrate 200 than the second electrode 228 of the light emitting element 220. For example, the light emitting element 220 can be any one of an organic light emitting diode, an inorganic light emitting diode, and a quantum dot light emitting diode.

[0043] For example, Figure 1 As shown, each sub-pixel further includes a metal reflective layer 222 , and the metal reflective layer 222 is located between the base substrate 200 and the first electrode 226 .

[0044] For example, Figure 1 As shown, each sub-pixel further includes a silicon nitride (SiNx) layer 224, and the silicon nitride layer 224 is located between the first electrode 226 and the metal reflective layer 222. Figure 1 As shown, the silicon nitride layer 224 is in direct contact with the metal reflective layer 222 , and the silicon nitride layer 224 includes a first via hole 224 a , through which the first electrode 226 and the metal reflective layer 222 are electrically connected.

[0045] For example, in some examples, such as Figure 1As shown, both the first electrode 226 and the second electrode 228 are transparent electrodes. A portion of the light emitted by the light-emitting functional layer 227 can be directly emitted outward through the second electrode 228, and another portion of the light emitted by the light-emitting functional layer 227 needs to pass through the first electrode 226 and the silicon nitride layer 224, be reflected by the metal reflective layer 222, pass through the silicon nitride layer 224 and the first electrode 226, and finally be emitted outward through the second electrode 228. Therefore, improving the reflectivity of the reflective electrode structure composed of the metal reflective layer 222, the silicon nitride layer 224 and the first electrode 226 helps to improve the light output brightness and light output efficiency of the light-emitting element. For the light emitted by the light-emitting functional layer 227, the first electrode 226 and the silicon nitride layer 224 can be considered to be transparent. Therefore, improving the reflectivity of the above-mentioned reflective electrode structure mainly lies in improving the reflectivity of the metal reflective layer 222. On the one hand, the reflectivity of the metal reflective layer 222 can be improved by selecting a metal material with a higher reflectivity to form the metal reflective layer 222; on the other hand, the reflectivity of the metal reflective layer 222 can be improved by reducing the surface roughness of the surface of the metal reflective layer 222 close to the silicon nitride layer 224 (the lower the surface roughness, the closer the surface is to an ideal mirror, and thus the higher the reflectivity of the surface).

[0046] For example, in some examples, in order to improve the reflectivity of the metal reflective layer 122, the material of the metal reflective layer 222 may include a metal material with high reflectivity (for example, a reflectivity of more than 90% is a high reflectivity), for example, silver (Ag) or silver alloys and other silver-containing metal materials, or aluminum (Al) or aluminum alloys and other aluminum-containing metal materials, etc., to improve the reflectivity of the metal reflective layer 222 from the material level. For example, the above-mentioned metal reflective layer 222 can be formed by methods such as electron beam evaporation. It should be noted that due to the active chemical properties of Al, it is easy to oxidize into aluminum oxide (AlOx), which deteriorates the reflectivity and causes device failure. At the same time, Al atoms are easy to migrate and easily affect other film layers. Therefore, Al is usually not directly used as the material of the first electrode 226 to directly contact the light-emitting functional layer 227.

[0047] For example, in some examples, the thickness of the metal reflective layer 222 is For example If the thickness of the metal reflective layer 222 is too small, the reflective effect thereof is not obvious; if the thickness of the metal reflective layer 222 is too large, the overall thickness of the display panel will be larger.

[0048] For example, in some examples, the silicon nitride layer 224 can be formed on the metal reflective layer 222 by vapor deposition. For example, the vapor deposition method includes chemical vapor deposition (CVD), plasma chemical vapor deposition (PCVD), plasma enhanced chemical vapor deposition (PECVD), etc. For example, when the silicon nitride layer is formed by the vapor deposition method, the deposition temperature can be relatively low. Taking the metal reflective layer 222 as an Al reflective layer as an example, as the deposition temperature decreases, the migration of Al atoms will be suppressed, and the degree to which the surface roughness of the Al reflective layer 222 becomes higher can be reduced, so as to improve the reflectivity of the metal reflective layer 222 from a structural level.

[0049] For example, in some examples, such as Figure 1 As shown, the silicon nitride layer 224 in the plurality of sub-pixels is formed as one piece to facilitate manufacturing. Figure 1 As shown, the silicon nitride layer 224 may further include an opening 224b exposing the pad 215. The opening 224b is provided to facilitate electrical connection and signal communication between the pad 215 and an external circuit. For example, the opening 224b exposing the pad 215 is located in the peripheral area BA.

[0050] For example, in some examples, the deposition temperature of the silicon nitride layer 224 is, for example, 70-100 degrees Celsius, or, for example, 80-85 degrees Celsius.

[0051] For example, in some examples, the thickness of silicon nitride layer 224 is For example If the thickness of the silicon nitride layer 224 is too small, it may not be able to effectively protect Al from oxidation and limit the migration of Al atoms; if the thickness of the silicon nitride layer 224 is too large, the overall thickness of the display panel will be larger.

[0052] For example, in some examples, the first electrode 226 is a transparent electrode, and the material of the first electrode 226 may include a transparent conductive material, for example, may include at least one of indium tin oxide (ITO), zinc tin oxide (IZO), indium gallium tin oxide (IGZO), indium zinc tin oxide (IZTO), etc. For example, the first electrode 226 may be formed on the side of the silicon nitride layer 224 away from the metal reflective layer 222 by a magnetron sputtering method. For example, the first electrode 226 is made of ITO, and since the ITO material has a high work function (about 5.0 eV) and a high transmittance, light can pass through the first electrode 226 almost without loss, so that the above-mentioned reflective electrode structure as a whole can have a higher reflectivity.

[0053] For example, in some examples, the thickness of the first electrode 226 is If the thickness of the first electrode 226 is too small, its conductive performance may be poor; if the thickness of the first electrode 226 is too large, the overall thickness of the display panel will be larger.

[0054] For example, Figure 1 As shown, the silicon nitride layer 224 includes a first via hole 224a, and the metal reflective layer 222 and the first electrode 226 are electrically connected through the first via hole 224a. Figure 1 As shown, the first via hole 224a is filled with a metal component 225, and the first electrode 226 is electrically connected to the metal reflective layer 222 through the metal component 225 located in the via hole 224a, while the first electrode 226 and the metal reflective layer 222 are not in direct contact. For example, the metal component 225 is made of a metal material, such as tungsten metal, and the via hole filled with tungsten metal is also called a tungsten via (W-via). For example, by using a silicon-based semiconductor process, a tungsten via is formed in the silicon nitride layer 224 to ensure the stability of the conductive path. Moreover, since the process for making tungsten vias is mature, the surface flatness of the obtained silicon nitride layer 224 is good, which is conducive to improving the reflectivity of the above-mentioned reflective electrode structure.

[0055] For example, when a driving voltage is applied to the first electrode 226 and the second electrode 228 respectively to form a voltage difference between the first electrode 226 and the second electrode 228, the light-emitting functional layer 227 can emit light under the action of the electric field between the first electrode 226 and the second electrode 228. For example, the light-emitting functional layer 227 can include any one of a common organic light-emitting functional layer, an inorganic light-emitting functional layer (for example, a quantum well, such as GaN / InGaN quantum well, GaAs / InGaAs quantum well, etc.) and a quantum dot light-emitting functional layer. For example, the organic light-emitting functional layer can include an organic light-emitting layer, and can also include an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer, etc. These layers can use common materials and structures, which will not be repeated here.

[0056] For example, in some examples, such as Figure 1 As shown, the display panel further includes a defining layer (e.g., a pixel defining layer) 229 for defining the light-emitting functional layer 227. The defining layer 229 defines the light-emitting functional layer 227 in its opening to avoid crosstalk between different sub-pixels. For example, the display panel may be a top-emitting OLED display panel, and the embodiments of the present disclosure include but are not limited to this.

[0057] For example, in some examples, the second electrode 228 is a transparent electrode, so that the light emitted by the light-emitting functional layer 227 can pass through the second electrode 228 and be emitted outward. For example, in some examples, the material of the second electrode 28 may include a transparent conductive material, such as at least one of indium tin oxide (ITO), zinc tin oxide (IZO), indium gallium tin oxide (IGZO), indium zinc tin oxide (IZTO), etc.

[0058] For example, in some examples, such as Figure 1 As shown, the second electrodes 228 of the light emitting elements 220 in the plurality of sub-pixels are integrally formed to facilitate manufacturing. For example, the second electrodes 228 of the light emitting elements 220 in the plurality of sub-pixels are formed as a whole layer of surface electrodes, for example, forming a second electrode layer 228 .

[0059] For example, any one of the first electrode 226 and the second electrode 228 may serve as an anode, and the other may serve as a cathode, which is not limited in the embodiments of the present disclosure.

[0060] For example, in some examples, such as Figure 1 As shown, each sub-pixel may further include an anti-oxidation layer 217, and the anti-oxidation layer 217 is located between the base substrate 200 and the metal reflective layer 222, and the anti-oxidation layer 217 is in direct contact with the metal reflective layer 222. Thus, the anti-oxidation layer 217 can prevent the metal reflective layer 222 from being oxidized. For example, the material of the anti-oxidation layer 217 is a conductive material, such as titanium nitride (TiN) and the like.

[0061] For example, Figure 1 As shown, each sub-pixel further includes a driving circuit, which is located between the substrate 200 and the metal reflective layer 222. The driving circuit is electrically connected to the light-emitting element 220 to drive the light-emitting element 220 to emit light. Figure 1 As shown, the driving circuit includes a driving transistor T and a storage capacitor ( Figure 1 It should be noted that the specific circuit structure in each sub-pixel can be set according to actual needs. For example, Figure 1 The entire components of the circuit structure in each sub-pixel are not shown. For example, the circuit structure in each sub-pixel may also include other transistors or capacitors, etc., and the embodiments of the present disclosure are not limited to this.

[0062] For example, Figure 1As shown, the driving transistor T includes a gate G, a source S and a drain D. The three electrodes correspond to three electrode connecting portions respectively. For example, the gate G is electrically connected to the gate connecting portion 210g, the source S is electrically connected to the source connecting portion 210s, and the drain D is electrically connected to the drain connecting portion 210d. For example, the three electrodes are electrically connected to the three electrode connecting portions through tungsten vias 205 (refer to the above description of tungsten vias).

[0063] For example, Figure 1 As shown, the display panel further includes a second via hole 214a, for example, the second via hole 214a can also be formed as a tungsten via hole. For example, the drain connection portion 210d is electrically connected to the metal reflective layer 222 through the second via hole 214a, and at the same time, the metal reflective layer 222 is electrically connected to the first electrode 226 through the first via hole 224a, so the drain D can be electrically connected to the first electrode 226. When the driving transistor T is in an on state, the electrical signal provided by the power line can be transmitted to the first electrode 226 through the drain D of the driving transistor T, the drain connection portion 210d, and the metal reflective layer 222. Due to the voltage difference formed between the first electrode 226 and the second electrode 228, an electric field is formed between the two, and holes and electrons are injected into the light-emitting functional layer 227, and the light-emitting functional layer 227 emits light under the action of the electric field. It can be understood that, in the driving transistor T, the positions of the source S and the drain D can be interchanged (correspondingly, the positions of the source connecting portion 210s and the drain connecting portion 210d can also be interchanged), that is, one of the source S and the drain D of the driving transistor can be electrically connected to the metal reflective layer 222. For example, one of the source S and the drain D of the driving transistor is electrically connected to the metal reflective layer 222 through the second via 214a.

[0064] For example, in some examples, the gate G of the driving transistor T is electrically connected to the storage capacitor, for example, the gate G of the driving transistor T can be electrically connected to the storage capacitor through the gate connection portion 210g. For example, the storage capacitor is configured to store a data signal so that the driving transistor T drives the light emitting element 220 to emit light according to the stored data signal.

[0065] For example, the materials of the gate connection portion 210g, the source connection portion 210s, and the drain connection portion 210d may include a metal material. Figure 1 As shown, an anti-oxidation layer 207 may be provided on at least one side (e.g., upper side and / or lower side) of each of the gate connection portion 210g, the source connection portion 210s, and the drain connection portion 210d, so as to effectively prevent these electrode connection portions from being oxidized and improve their conductive properties. For example, the material of the anti-oxidation layer 207 is a conductive material, such as titanium nitride (TiN), etc.

[0066] For example, Figure 1As shown, the display panel further includes a first encapsulation layer 232, a color filter layer 234, a second encapsulation layer 236, and a cover plate 238, which are arranged on a side of the light-emitting element 220 away from the base substrate 200. For example, the first encapsulation layer 232 is located on a side of the second electrode 228 away from the base substrate 200. For example, the color filter layer 234 is located on a side of the first encapsulation layer 232 away from the base substrate 200, and includes a red filter unit R, a green filter unit G, and a blue filter unit R; for example, the light-emitting element 220 is configured to emit white light, and white light can be transmitted through the color filter layer 234 to achieve color display. For example, the second encapsulation layer 236 and the cover plate 238 are located on a side of the color filter layer 234 away from the base substrate. The specific materials of the first encapsulation layer 232, the color filter layer 234, the second encapsulation layer 236, and the cover plate 238 can adopt conventional materials in the art, which will not be discussed in detail here.

[0067] For example, in the display panel provided in the embodiment of the present disclosure, the first electrode 226, the light-emitting functional layer 227 and the second electrode 228 of the light-emitting element 220, as well as the first encapsulation layer 232, the color filter layer 234, the second encapsulation layer 236 and the cover plate 238 can all be manufactured on a substrate prepared separately; at the same time, the silicon nitride layer 224 above the pad 215 is also etched in the panel factory to expose the pad and make it bonded to the flexible circuit board (FPC bonding) or wire bonding (Wirebonding) process. Therefore, in the embodiment of the present disclosure, for example, the above-mentioned separately prepared substrate can be manufactured by a wafer factory, and the substrate includes a base substrate 200 (for example, a silicon-based base substrate) and a driving circuit, a metal reflective layer 222 and a silicon nitride layer 224, and is suitable for forming a light-emitting element 220, and then the panel factory prepares other structures on the substrate, which not only reduces the difficulty of manufacturing the metal reflective layer 222, but also facilitates the subsequent process of the panel factory.

[0068] Figure 2 A schematic diagram of the partial structure of another display panel provided in at least one embodiment of the present disclosure. Figure 2 The display panel shown is Figure 1 The display panels shown differ in that: Figure 2 In the display panel shown in FIG. 1 , the first electrode 226 is electrically connected to the metal reflective layer 222 through the first via hole 224a in the silicon nitride layer 224. Figure 1 The corresponding electrical connection methods in the display panels shown are different. Figure 2 The settings of other structures in the display panel shown can refer to Figure 1 The description of the display panel shown in FIG. 1 is not repeated here.

[0069] For example, Figure 2As shown, at least a portion of the first electrode 226 is located in the first via hole 224a and directly contacts the metal reflective layer 222, so that the first electrode 226 is electrically connected to the metal reflective layer 222. The manufacturing process of this connection method is relatively simple, and since the first electrode 226 and the metal reflective layer 222 are in direct contact with each other, it is conducive to the thinning of the display panel.

[0070] It should be noted that, in the display panel provided by the embodiment of the present disclosure, the first via hole 224a in the silicon nitride layer 224 can be arranged between the edge region of the first electrode 226 and the metal reflective layer 222. For example, in some examples, the orthographic projection of the light-emitting functional layer 227 on the base substrate 200 and the orthographic projection of the first via hole 224a on the base substrate 200 are both located within the orthographic projection of the metal reflective layer 222 on the base substrate 200, and at the same time, there is no overlap between the orthographic projection of the light-emitting functional layer 227 on the base substrate 200 and the orthographic projection of the first via hole 224a on the base substrate 200, so that when the metal reflective layer 222 reflects the light emitted by the light-emitting functional layer 227, the first via hole 224a has basically no effect on the reflection process. It should also be noted that the shape and size of the first electrode 226 and the metal reflective layer 222 can be set according to actual needs, and the embodiments of the present disclosure are not limited to this.

[0071] Figure 3 A schematic diagram of the circuit principle of a display panel provided for some embodiments of the present disclosure. Figure 3 The circuit principle shown can be used for Figure 1 and Figure 2 For example, Figure 3 As shown, the display panel includes a display area AA (corresponding to Figure 1 or Figure 2 The plurality of light emitting elements L (corresponding to the display area AA shown in FIG. Figure 1 or Figure 2 ) and a pixel circuit 410 coupled to each light emitting element L in a one-to-one correspondence. For example, the pixel circuit 410 includes a driving circuit (corresponding to Figure 1 or Figure 2 The driving circuit in the embodiment shown in the figure), for example, the driving circuit includes a driving transistor (corresponding to Figure 1 or Figure 2) and the storage capacitor shown in . In addition, the display panel may further include a plurality of voltage control circuits 420 in a non-display area outside the display area AA. For example, at least two pixel circuits 40 in a row share a voltage control circuit 420, and the first pole of the driving transistor in a row of pixel circuits 410 is coupled to the common voltage control circuit 420, and the second pole of each driving transistor is coupled to the corresponding light-emitting element L. The voltage control circuit 420 is configured to respond to the reset control signal RE, output the initialization signal Vinit to the first pole of the driving transistor, and control the corresponding light-emitting element L to reset; respond to the light-emitting control signal EM, and output the first power supply signal VDD to the first pole of the driving transistor to drive the light-emitting element L to emit light. By sharing the voltage control circuit 420, the structure of each pixel circuit in the display area 130 can be simplified, and the occupied area of ​​the pixel circuit in the display area AA can be reduced, so that more pixel circuits and light-emitting elements can be set in the display area AA to achieve a high PPI (Pixel Per Inch) display panel. Furthermore, the voltage control circuit 420 outputs the initialization signal Vinit to the first electrode of the driving transistor under the control of the reset control signal RE, and controls the corresponding light-emitting element to reset, thereby avoiding the influence of the voltage loaded on the light-emitting element during the previous frame on the next frame of light emission, thereby improving the afterimage phenomenon.

[0072] For example, the display panel may further include a plurality of pixel units PX located in the display area AA, each pixel unit PX including a plurality of sub-pixels; each sub-pixel includes a light-emitting element L and a pixel circuit 410. Further, the pixel unit PX may include three sub-pixels of different colors. The three sub-pixels may be a red sub-pixel, a green sub-pixel, and a blue sub-pixel. Of course, the pixel unit PX may also include four, five or more sub-pixels, which needs to be designed and determined according to the actual application scenario and is not limited here.

[0073] For example, the pixel circuits 410 in at least two adjacent sub-pixels in the same row may share a voltage control circuit 420. Figure 4 As shown, all pixel circuits 410 in the same row can share a voltage control circuit 420. Alternatively, in other examples, pixel circuits 410 in two, three or more adjacent sub-pixels in the same row can also share a voltage control circuit 420, which is not limited here. In this way, the occupied area of ​​the pixel circuits in the display area AA can be reduced by sharing the voltage control circuit 420.

[0074] Figure 4 A circuit diagram of a specific implementation example of a voltage control circuit and a pixel circuit in a display panel provided in some embodiments of the present disclosure. For example, the driving transistor M0 (corresponding to Figure 1 or Figure 2 The driving transistor T) shown in the figure can be an N-type transistor. In addition, the light-emitting element L can include an OLED. In this way, the positive electrode of the OLED is electrically connected to the second electrode D of the driving transistor M0, and the negative electrode of the OLED is electrically connected to the second power supply terminal VSS. The voltage of the second power supply terminal VSS is generally a negative voltage or a ground voltage VGND (generally 0V), and the voltage of the initialization signal Vinit can also be set to the ground voltage VGND, which is not limited here. For example, the OLED can be set to a Micro-OLED or a Mini-OLED, which is further conducive to realizing a high PPI organic light-emitting display panel.

[0075] For example, Figure 4 As shown, the voltage control circuit 420 may include a first switch transistor M1 and a second switch transistor M2; the pixel circuit 410 may include a third switch transistor M3, a fourth switch transistor M4 and a fifth switch transistor M5 and a storage capacitor Cst in addition to the driving transistor M0.

[0076] For example, Figure 4 As shown, the gate of the first switch transistor M1 is used to receive the reset control signal RE, the first electrode of the first switch transistor M1 is used to receive the initialization signal Vinit, and the second electrode of the first switch transistor M1 is coupled to the first electrode of the third switch transistor M3. The gate of the second switch transistor M2 is used to receive the light emitting control signal EM, the first electrode of the second switch transistor M2 is used to receive the first power supply signal VDD, and the second electrode of the second switch transistor M2 is coupled to the first electrode of the third switch transistor M3.

[0077] For example, the first switch transistor M1 and the second switch transistor M2 may be of different types. For example, the first switch transistor M1 is an N-type transistor, and the second switch transistor M2 is a P-type transistor. Alternatively, the first switch transistor M1 is a P-type transistor, and the second switch transistor M2 is an N-type transistor. Of course, the first switch transistor M1 and the second switch transistor M2 may be of the same type. In practical applications, the types of the first switch transistor M1 and the second switch transistor M2 need to be designed according to the actual application environment, which is not limited here.

[0078] For example, Figure 4As shown, the gate of the third switch transistor M3 is used to receive the transmission control signal VT, the first electrode of the third switch transistor M3 is coupled to the second electrode of the first switch transistor M1 and the second electrode of the second switch transistor M2, and is used to receive the initialization signal Vinit transmitted from the first switch transistor M1 or the first power supply signal VDD transmitted from the second switch transistor M2, and the second electrode of the third switch transistor M3 is coupled to the first electrode S of the driving transistor M0. For example, the conduction or cutoff of the third switch transistor M3 can be controlled by controlling whether the transmission control signal VT is input, thereby controlling the light-emitting time of the light-emitting element L, and then realizing PWM (Pulse Width Modulation) dimming. This control method is conducive to ensuring the uniformity of PWM control of each sub-pixel.

[0079] For example, the pixel circuit 410 may further include a fourth switch transistor M4 and a storage capacitor Cst. For example, the gate of the fourth switch transistor M4 is used to receive a gate scan signal SN, the first electrode of the fourth switch transistor M4 is used to receive a data signal DATA, and the second electrode of the fourth switch transistor M4 is coupled to the gate G of the driving transistor M0. The first end of the storage capacitor Cst is coupled to the gate G of the driving transistor M0, and the second end of the storage capacitor Cst is coupled to the first voltage terminal V1. The voltage of the first voltage terminal V1 may be a ground voltage VGND, and embodiments of the present disclosure include but are not limited to this. For example, the storage capacitor is used to store the written data signal DATA so that the driving transistor M0 drives the light-emitting element L to emit light according to the stored data signal DATA.

[0080] For example, the pixel circuit 410 may further include a fifth switch transistor M5. For example, the gate of the fifth switch transistor M5 is used to receive the inverted signal SN' of the gate scan signal SN, the first electrode of the fifth switch transistor M5 is used to receive the data signal DATA, and the second electrode of the fifth switch transistor M5 is coupled to the gate G of the driving transistor M0. In addition, the fifth switch transistor M5 is of a different type from the fourth switch transistor M4. For example, in some examples, such as Figure 4 As shown, the fourth switch transistor M4 is an N-type transistor, and the fifth switch transistor M5 is a P-type transistor; or, in other examples, the fourth switch transistor M4 is a P-type transistor, and the fifth switch transistor M5 is an N-type transistor.

[0081] It should be noted that when the voltage of the data signal DATA is a voltage corresponding to a high gray scale, the voltage of the data signal DATA can be prevented from being affected by the threshold voltage of the fourth N-type switch transistor M4, for example, by turning on the fifth P-type switch transistor M5 to transmit the data signal DATA to the gate G of the drive transistor M0. When the voltage of the data signal DATA is a voltage corresponding to a low gray scale, the voltage of the data signal DATA can be prevented from being affected by the threshold voltage of the fifth P-type switch transistor M5, for example, by turning on the fourth N-type switch transistor M4 to transmit the data signal DATA to the gate G of the drive transistor M0. In this way, the voltage range input to the gate G of the drive transistor M0 can be increased.

[0082] The driving transistor M0 , the first switch transistor M1 , the second switch transistor M2 , the third switch transistor M3 , the fourth switch transistor M4 and the fifth switch transistor M5 are MOS transistors fabricated in a substrate 200 (eg, a silicon-based substrate).

[0083] It should be noted that, for the sake of clarity and simplicity, the embodiments of the present disclosure do not provide all the components of the display panel. To achieve the basic functions of the display panel, those skilled in the art may provide and set other structures not shown according to specific needs, and the embodiments of the present disclosure do not limit this.

[0084] For example, in the display panel provided by the embodiment of the present disclosure, the surface roughness of the reflective electrode structure composed of the metal reflective layer 222, the silicon nitride layer 224 and the first electrode 226 is relatively low. For example, the surface roughness of the reflective electrode structure can be represented by the profile arithmetic mean deviation Ra, and the profile arithmetic mean deviation Ra can be measured by an electric profiler and obtained through calculation (the calculation process can be automatically completed by the instrument). For example, the surface roughness Ra of the reflective electrode structure is less than 3.0nm, such as 2.5nm, 2.0nm, 1.8nm, 1.5nm, etc.

[0085] Taking the reflective electrode structure as an Al / SiNx / ITO stacked structure as an example, compared with a common Al / SiOx / ITO stacked structure used for a reflective electrode structure, under the same other formation conditions (for example, the deposition method, deposition temperature, and thickness of the Al reflective layer are the same, the deposition method, deposition temperature, and thickness of the ITO layer are the same, and the thicknesses of SiNx and SiOx are the same, etc.), since the deposition temperature of SiNx (for example, 70-100 degrees Celsius) is lower than the deposition temperature of SiOx (for example, 120-150 degrees Celsius), the migration of Al atoms when depositing SiNx is not as intense as the migration of Al atoms when depositing SiOx, and thus, the degree to which the surface roughness of the Al reflective layer increases when depositing SiNx is less than the degree to which the surface roughness of the Al reflective layer increases when depositing SiOx; furthermore, the surface roughness of the electrode structure of Al / SiNx / ITO is lower than the surface roughness of the electrode structure of Al / SiOx / ITO, that is, the reflectivity of the electrode structure of Al / SiNx / ITO is higher than the reflectivity of the electrode structure of Al / SiOx / ITO.

[0086] For example, in a comparative example, the surface roughness Ra of the electrode structure of Al / SiOx / ITO is 3.5 nm, and its reflectivity is lower than 85%; in an example, the surface roughness Ra of the electrode structure of Al / SiNx / ITO is 1.8 nm, and its reflectivity is higher than 90%, for example, its reflectivity can reach 92%.

[0087] The structure of the display panel provided by the embodiment of the present disclosure, including the metal reflective layer, the silicon nitride layer and the first electrode, has a lower surface roughness, which improves the reflectivity of the metal reflective layer, thereby improving the light output efficiency and light output brightness of the light-emitting element, and further improving the display brightness of the display panel.

[0088] At least one embodiment of the present disclosure further provides a display device. Figure 5 A schematic block diagram of a display device provided by at least one embodiment of the present disclosure. Figure 5 As shown, the display device 600 includes the display panel provided by any embodiment of the present disclosure.

[0089] For example, the display device may be a silicon-based OLED display device, which is not limited in the embodiments of the present disclosure.

[0090] For example, the display device may further include other components, such as a timing controller, a signal decoding circuit, a voltage conversion circuit, etc. These components may adopt conventional components or structures, which will not be described in detail here.

[0091] For example, the display device in this embodiment can be: a display panel, a monitor, a television, an electronic paper display device, a mobile phone, a tablet computer, a laptop computer, a digital photo frame, a navigator, a virtual reality device, an augmented reality device, or any other product or component with a display function. It should be noted that the display device can also include other conventional components or structures. For example, in order to realize the necessary functions of the display device, those skilled in the art can set other conventional components or structures according to specific application scenarios, and the embodiments of the present disclosure do not limit this.

[0092] It should be noted that, for the sake of clarity and simplicity, the embodiment of the present disclosure does not provide all the components of the display device 600. To achieve the basic functions of the display device 600, those skilled in the art can provide and set other structures not shown according to specific needs, and the embodiment of the present disclosure does not limit this.

[0093] The technical effects of the display device provided by at least one embodiment of the present disclosure can be referred to the corresponding description about the display substrate in the above embodiments, which will not be repeated here.

[0094] At least one embodiment of the present disclosure further provides a method for manufacturing a display panel, which can be used to manufacture the display panel provided by any of the aforementioned embodiments. Figure 6 A flow chart of a method for manufacturing a display panel provided in at least one embodiment of the present disclosure.

[0095] like Figure 6 As shown, the manufacturing method of the electrode structure includes steps S10 to S50.

[0096] Step S10: providing a substrate, on which a driving circuit is formed. The driving circuit includes a driving transistor and a storage capacitor. The driving transistor includes a source, a drain and a gate. The gate is electrically connected to the storage capacitor.

[0097] For example, you can provide Figure 1 or Figure 2 The substrate 200 shown in any one of the above is not limited thereto. For example, the substrate 200 includes but is not limited to a silicon-based substrate. For example, referring to Figure 1 or Figure 2 As shown, a driving circuit is formed on the substrate 200, for example, the driving circuit includes a driving transistor T and a storage capacitor ( Figure 1 and Figure 2 not shown).

[0098] For example, refer to Figure 1 or Figure 2As shown, the driving transistor T includes a gate G, a source S and a drain D. The three electrodes correspond to three electrode connecting portions respectively. For example, the gate G is electrically connected to the gate connecting portion 210g, the source S is electrically connected to the source connecting portion 210s, and the drain D is electrically connected to the drain connecting portion 210d. For example, the three electrodes are electrically connected to the three electrode connecting portions through the tungsten vias 205.

[0099] For example, refer to Figure 4 As shown, the driving transistor T (ie Figure 4 The gate G of the driving transistor M0 shown is electrically connected to the storage capacitor Cst. For example, the gate G of the driving transistor T can be electrically connected to the storage capacitor through the gate connection portion 210g. For example, the storage capacitor is configured to store a data signal so that the driving transistor T drives the light emitting element 220 to emit light according to the stored data signal.

[0100] For example, more details of the structure of the base substrate 200 and the driving circuit can be referred to the relevant description of the base substrate and the driving circuit in the above-mentioned embodiment of the display panel, and will not be repeated here.

[0101] Step S20: forming a metal reflective layer on a side of the driving circuit away from the substrate, and electrically connecting one of the source electrode and the drain electrode to the metal reflective layer.

[0102] For example, refer to Figure 1 or Figure 2 As shown, a metal reflective layer 222 is formed on a side of the driving circuit (ie, the driving transistor T) away from the base substrate 200 , and one of the source S and the drain D is electrically connected to the metal reflective layer 222 through the second via hole 214 a .

[0103] For example, refer to Figure 1 or Figure 2 As shown, a second via hole 214a may be formed on the side of the driving circuit away from the substrate 200. For example, tungsten metal may be filled in the second via hole 214a, so that the second via hole 214a is formed as a tungsten via hole. Figure 1 or Figure 2 As shown, the tungsten via 214a is in direct contact with the drain connection portion 210d to form an electrical connection with the drain D; of course, in other examples, the tungsten via 214a may also be in direct contact with the source connection portion 210s to form an electrical connection with the source S.

[0104] For example, refer to Figure 1 or Figure 2As shown, after forming the tungsten via 214a, a metal reflective layer 222 may be formed, and the metal reflective layer 222 may be in direct contact with the tungsten via 214a to form an electrical connection. Thus, one of the source S and the drain D may be electrically connected to the metal reflective layer 222 through the tungsten via 214a.

[0105] For example, refer to Figure 1 or Figure 2 As shown, before forming the metal reflective layer 222, an anti-oxidation layer 217 may be formed first, and the anti-oxidation layer 217 is located between the base substrate 200 and the metal reflective layer 222, and the anti-oxidation layer 217 is in direct contact with the metal reflective layer 222. Thus, the anti-oxidation layer 217 can prevent the metal reflective layer 222 from being oxidized. For example, the material of the anti-oxidation layer 217 is a conductive material, such as titanium nitride (TiN), etc. For example, the metal reflective layer 222 can be electrically connected to the tungsten via 214a through the anti-oxidation layer 217.

[0106] For example, in some examples, in order to improve the reflectivity of the metal reflective layer 122, the material of the metal reflective layer 222 may include a metal material with high reflectivity (for example, a reflectivity of 90% or more is considered high reflectivity), for example, silver (Ag) or silver alloys and other silver-containing metal materials, or aluminum (Al) or aluminum alloys and other aluminum-containing metal materials, etc., so as to improve the reflectivity of the metal reflective layer 222 from the material level. For example, the metal reflective layer 222 may be formed by methods such as electron beam evaporation.

[0107] For example, in some examples, the thickness of the metal reflective layer 222 is For example If the thickness of the metal reflective layer 222 is too small, the reflective effect thereof is not obvious; if the thickness of the metal reflective layer 222 is too large, the overall thickness of the display panel will be larger.

[0108] Step S30: forming a silicon nitride layer on a side of the metal reflective layer away from the base substrate, and forming a first via hole in the silicon nitride layer.

[0109] For example, refer to Figure 1 or Figure 2 As shown, a silicon nitride layer 224 may be formed on a side of the metal reflective layer 222 away from the base substrate 200 , and a first via hole 224 a may be formed in the silicon nitride layer.

[0110] For example, in some examples, the silicon nitride layer 224 can be formed on the metal reflective layer 222 by vapor deposition. For example, the vapor deposition method includes chemical vapor deposition (CVD), plasma chemical vapor deposition (PCVD), plasma enhanced chemical vapor deposition (PECVD), etc. For example, when the silicon nitride layer is formed by the vapor deposition method, its deposition temperature can be relatively low (for example, lower than the deposition temperature of the silicon oxide (SiOx) layer). Taking the metal reflective layer 222 as an Al reflective layer as an example, as the deposition temperature decreases, the migration of Al atoms will be suppressed, and the degree to which the surface roughness of the Al reflective layer 222 becomes higher can be reduced, so as to improve the reflectivity of the metal reflective layer 222 from the structural level.

[0111] For example, in some examples, reference Figure 1 or Figure 2 As shown, the silicon nitride layer 224 in the plurality of sub-pixels is formed as one piece to facilitate manufacturing. Figure 1 or Figure 2 As shown, an opening 224 b exposing the pad 215 may be formed in the silicon nitride layer 224 , and the opening 224 b facilitates electrical connection and signal communication between the pad 215 and an external circuit.

[0112] For example, in some examples, the deposition temperature of the silicon nitride layer 224 is, for example, 70-100 degrees Celsius, or, for example, 80-85 degrees Celsius.

[0113] For example, in some examples, the thickness of silicon nitride layer 224 is For example If the thickness of the silicon nitride layer 224 is too small, it may not be able to effectively protect Al from oxidation and limit the migration of Al atoms; if the thickness of the silicon nitride layer 224 is too large, the overall thickness of the display panel will be larger.

[0114] For example, a first via hole 224a can be formed in the silicon nitride layer 224 by photolithography, and the first via hole 224a is used to electrically connect the metal reflective layer 222 with the first electrode of the subsequently formed light emitting element. For example, the photolithography process can refer to common semiconductor processes, which will not be described in detail here.

[0115] Step S40: forming a light-emitting element on the side of the silicon nitride layer away from the base substrate, the light-emitting element comprising a first electrode, a light-emitting functional layer and a second electrode stacked in sequence, and the first electrode is electrically connected to the metal reflective layer through a first via hole.

[0116] For example, a light emitting element 220 may be formed on a side of the silicon nitride layer 224 away from the base substrate 200 , wherein the light emitting element 220 includes a first electrode 226 , a light emitting functional layer 227 , and a second electrode 228 stacked in sequence, and the first electrode 226 is electrically connected to the metal reflective layer 222 through a first via 224 a .

[0117] For example, in some examples, the metal member 225 may be first filled in the first via hole 224a. For example, the metal member 225 is made of a metal material, such as tungsten metal, so that the first via hole 224a is formed as a tungsten via hole. For example, the tungsten via hole 224a is in direct contact with the metal reflective layer 222 to form an electrical connection. Then, a first electrode 226 is formed on a side of the silicon nitride layer 224 away from the base substrate 200, and the first electrode 226 is in direct contact with the tungsten via hole 224a to form an electrical connection, so that the first electrode 226 is electrically connected to the metal reflective layer 222 through the first via hole 224a.

[0118] For example, in some examples, the first electrode 226 is a transparent electrode, and the material of the first electrode 226 may include a transparent conductive material, for example, may include at least one of indium tin oxide (ITO), zinc tin oxide (IZO), indium gallium tin oxide (IGZO), indium zinc tin oxide (IZTO), etc. For example, the first electrode 226 may be formed on the side of the silicon nitride layer 224 away from the metal reflective layer 222 by a magnetron sputtering method. For example, the first electrode 226 is made of ITO, and since the ITO material has a high work function (about 5.0 eV) and a high transmittance, light can pass through the first electrode 226 almost without loss, so that the reflective electrode structure composed of the metal reflective layer 222, the silicon nitride layer 224 and the first electrode 226 can have a higher reflectivity as a whole.

[0119] For example, in some examples, the thickness of the first electrode 226 is If the thickness of the first electrode 226 is too small, its conductive performance may be poor; if the thickness of the first electrode 226 is too large, the overall thickness of the display panel will be larger.

[0120] For example, after forming the first electrode 226, a light-emitting functional layer 227 may be formed on a side of the first electrode 226 away from the base substrate 220. For example, the light-emitting functional layer 227 may include any one of a common organic light-emitting functional layer, an inorganic light-emitting functional layer (e.g., a quantum well, such as a GaN / InGaN quantum well, a GaAs / InGaAs quantum well, etc.), and a quantum dot light-emitting functional layer. For example, the organic light-emitting functional layer may include an organic light-emitting layer, and may also include an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer, etc. These layers may use common materials and structures, which will not be described in detail herein.

[0121] For example, after forming the light-emitting functional layer 227, the second electrode 228 may be formed on a side of the light-emitting functional layer 227 away from the base substrate 220. For example, in some examples, the second electrode 228 is a transparent electrode, so that the light emitted by the light-emitting functional layer 227 can pass through the second electrode 228 and be emitted outward. For example, in some examples, the material of the second electrode 28 may include a transparent conductive material, such as at least one of indium tin oxide (ITO), zinc tin oxide (IZO), indium gallium tin oxide (IGZO), indium zinc tin oxide (IZTO), and the like.

[0122] For example, in some examples, reference Figure 1 or Figure 2 As shown, the second electrodes 228 of the light emitting elements 220 in the plurality of sub-pixels are integrally formed to facilitate manufacturing. For example, the second electrodes 228 of the light emitting elements 220 in the plurality of sub-pixels are formed as a whole layer of surface electrodes, for example, forming a second electrode layer 228 .

[0123] For example, when a driving voltage is applied to the first electrode 226 and the second electrode 228 respectively to form a voltage difference between the first electrode 226 and the second electrode 228 , the light-emitting functional layer 227 can emit light under the action of the electric field between the first electrode 226 and the second electrode 228 .

[0124] Step S50: forming a first encapsulation layer, a color filter layer, a second encapsulation layer and a cover plate in sequence on a side of the light emitting element away from the base substrate.

[0125] For example, refer to Figure 1 or Figure 2 As shown, a first encapsulation layer 232, a color filter layer 234, a second encapsulation layer 236 and a cover plate 238 can be sequentially formed on a side of the light-emitting element 220 away from the base substrate 220. For example, the first encapsulation layer 232 is located on a side of the second electrode layer 229 away from the base substrate 200. For example, the color filter layer 234 is located on a side of the first encapsulation layer 232 away from the base substrate 200, and includes a red filter unit R, a green filter unit G and a blue filter unit R; for example, the light-emitting element 220 is used to emit white light, and white light can achieve color display by passing through the color green light layer 234. For example, the second encapsulation layer 236 and the cover plate 238 are located on a side of the color filter layer 234 away from the base substrate. The specific materials of the first encapsulation layer 232, the color filter layer 234, the second encapsulation layer 236 and the cover plate 238 can be conventional materials in the art, which will not be discussed in detail here. It should be noted that, in some examples, the light-emitting elements in the plurality of sub-pixels may respectively emit three colors of light, for example, red, green, and blue. In this case, the color filter layer 234 may not be formed.

[0126] For example, in the display panel provided in the embodiment of the present disclosure, the first electrode 226, the light-emitting functional layer 227 and the second electrode 228 of the light-emitting element 220, as well as the first encapsulation layer 232, the color filter layer 234, the second encapsulation layer 236 and the cover plate 238 can all be manufactured on a substrate prepared separately; at the same time, the silicon nitride layer 224 above the pad 215 is also etched in the panel factory to expose the pad and make it bonded to the flexible circuit board (FPC bonding) or wire bonding (Wirebonding) process. Therefore, in the embodiment of the present disclosure, for example, the above-mentioned separately prepared substrate can be manufactured by a wafer factory, and the substrate includes a base substrate 200 (for example, a silicon-based base substrate) and a driving circuit, a metal reflective layer 222 and a silicon nitride layer 224, and is suitable for forming a light-emitting element 220, and then the panel factory prepares other structures on the substrate, which not only reduces the difficulty of manufacturing the metal reflective layer 222, but also facilitates the subsequent process of the panel factory.

[0127] For example, in the display panel manufactured by the above manufacturing method, the surface roughness of the reflective electrode structure composed of the metal reflective layer 222, the silicon nitride layer 224 and the first electrode 226 is relatively low. For example, the surface roughness of the reflective electrode structure can be represented by the profile arithmetic mean deviation Ra, and the profile arithmetic mean deviation Ra can be measured by an electric profiler and obtained through calculation (the calculation process can be automatically completed by the instrument). For example, the surface roughness Ra of the reflective electrode structure is less than 3.0nm, such as 2.5nm, 2.0nm, 1.8nm, 1.5nm, etc.

[0128] Taking the reflective electrode structure as an Al / SiNx / ITO stacked structure as an example, compared with a common Al / SiOx / ITO stacked structure used for a reflective electrode structure, under the same other formation conditions (for example, the deposition method, deposition temperature, and thickness of the Al reflective layer are the same, the deposition method, deposition temperature, and thickness of the ITO layer are the same, and the thicknesses of SiNx and SiOx are the same, etc.), since the deposition temperature of SiNx (for example, 70-100 degrees Celsius) is lower than the deposition temperature of SiOx (for example, 120-150 degrees Celsius), the migration of Al atoms when depositing SiNx is not as intense as the migration of Al atoms when depositing SiOx, and thus, the degree to which the surface roughness of the Al reflective layer increases when depositing SiNx is less than the degree to which the surface roughness of the Al reflective layer increases when depositing SiOx; furthermore, the surface roughness of the electrode structure of Al / SiNx / ITO is lower than the surface roughness of the electrode structure of Al / SiOx / ITO, that is, the reflectivity of the electrode structure of Al / SiNx / ITO is higher than the reflectivity of the electrode structure of Al / SiOx / ITO.

[0129] For example, in a comparative example, the surface roughness Ra of the electrode structure of Al / SiOx / ITO is 3.5 nm, and its reflectivity is lower than 85%; in an example, the surface roughness Ra of the electrode structure of Al / SiNx / ITO is 1.8 nm, and its reflectivity is higher than 90%, for example, its reflectivity can reach 92%.

[0130] The technical effects of the method for manufacturing a display panel provided by the embodiments of the present disclosure can be referred to the corresponding description of the display panel in the above embodiments, which will not be repeated here.

[0131] There are a few points to note about this disclosure:

[0132] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

[0133] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is enlarged or reduced, that is, these drawings are not drawn according to the actual scale.

[0134] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.

[0135] The above description is only an exemplary embodiment of the present disclosure, and is not intended to limit the protection scope of the present disclosure. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure is determined by the attached claims.

Claims

1. A display panel, comprising: A base substrate and a plurality of sub-pixels located on one side of the base substrate; At least one of the plurality of sub-pixels comprises: A light-emitting element, comprising a first electrode, a light-emitting functional layer, and a second electrode stacked in sequence, wherein the first electrode is closer to the base substrate than the second electrode; A metal reflective layer, located between the substrate and the first electrode; a silicon nitride layer, located between the first electrode and the metal reflective layer, the silicon nitride layer directly contacts the metal reflective layer, the silicon nitride layer comprises a first via hole, and the first electrode and the metal reflective layer are electrically connected through the first via hole; A driving circuit is located between the substrate and the metal reflective layer, the driving circuit includes a driving transistor and a storage capacitor, the driving transistor includes a source, a drain and a gate, one of the source and the drain is electrically connected to the metal reflective layer, the gate is electrically connected to the storage capacitor, and the storage capacitor is configured to store a data signal.

2. The display panel according to claim 1, wherein: The deposition temperature of the silicon nitride layer is 70-100 degrees Celsius.

3. The display panel according to claim 2, wherein: The deposition temperature of the silicon nitride layer is 80-85 degrees Celsius.

4. The display panel according to any one of claims 1 to 3, wherein: The thickness of the silicon nitride layer is 5. The display panel according to any one of claims 1 to 3, wherein: The material of the metal reflective layer includes a metal material containing silver or aluminum.

6. The display panel according to any one of claims 1 to 3, wherein: The thickness of the metal reflective layer is 7. The display panel according to any one of claims 1 to 3, wherein: The first electrode is a transparent electrode.

8. The display panel according to claim 7, wherein: The material of the first electrode includes at least one of indium tin oxide (ITO), zinc tin oxide (IZO), indium gallium tin oxide (IGZO), and indium zinc tin oxide (IZTO).

9. The display panel according to any one of claims 1 to 3, wherein: The thickness of the first electrode is 10. The display panel according to any one of claims 1 to 3, wherein: The surface roughness of the structure including the metal reflective layer, the silicon nitride layer and the first electrode is less than 3.0 nm.

11. The display panel according to any one of claims 1 to 3, wherein: The light-emitting functional layer includes one of an organic light-emitting functional layer, an inorganic light-emitting functional layer and a quantum dot light-emitting functional layer.

12. The display panel according to any one of claims 1 to 3, wherein: The second electrode is a transparent electrode.

13. The display panel according to any one of claims 12, wherein: The material of the second electrode includes at least one of indium tin oxide (ITO), zinc tin oxide (IZO), indium gallium tin oxide (IGZO), and indium zinc tin oxide (IZTO).

14. The display panel according to any one of claims 1 to 3, further comprising: The first encapsulation layer, the color filter layer, the second encapsulation layer and the cover plate which are stacked in sequence are arranged on a side of the light emitting element away from the base substrate.

15. The display panel according to claim 14, wherein: The light emitting element is configured to emit white light, and the color filter layer includes a red filter unit, a green filter unit and a blue filter unit.

16. The display panel according to any one of claims 1 to 3, wherein: The substrate is a silicon-based substrate.

17. The display panel according to any one of claims 1 to 3, further comprising: A second via hole; wherein one of the source electrode and the drain electrode is electrically connected to the metal reflective layer through the second via hole.

18. The display panel according to any one of claims 1 to 3, further comprising: An anti-oxidation layer; wherein the anti-oxidation layer is located between the base substrate and the metal reflective layer, and the anti-oxidation layer is in direct contact with the metal reflective layer.

19. A display device comprising: A display panel according to any one of claims 1 to 18.

20. A method for manufacturing a display panel, comprising: Providing a substrate substrate, on which a driving circuit is formed, the driving circuit comprising a driving transistor and a storage capacitor, the driving transistor comprising a source, a drain and a gate, the gate being electrically connected to the storage capacitor; forming a metal reflective layer on a side of the driving circuit away from the base substrate, and electrically connecting one of the source electrode and the drain electrode to the metal reflective layer; forming a silicon nitride layer on a side of the metal reflective layer away from the base substrate, and forming a first via hole in the silicon nitride layer; as well as A light emitting element is formed on a side of the silicon nitride layer away from the base substrate. The light emitting element includes a first electrode, a light emitting functional layer, and a second electrode stacked in sequence. The first electrode is electrically connected to the metal reflective layer through the first via hole.

21. The manufacturing method according to claim 20, further comprising: Before forming the metal reflective layer on the side of the driving circuit away from the base substrate, forming a second via hole on the side of the driving circuit away from the base substrate; Wherein, one of the source electrode and the drain electrode is electrically connected to the metal reflective layer through the second via hole.

22. The manufacturing method according to claim 20 or 21, further comprising: A first encapsulation layer, a color filter layer, a second encapsulation layer and a cover plate are sequentially formed on a side of the light emitting element away from the base substrate.

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