Display device manufacturing apparatus and display device manufacturing method

Abstract

The present disclosure relates to a manufacturing device for a display device and a manufacturing method for a display device. The manufacturing device for a display device includes: a generating unit for generating a laser for separating at least a portion of a thin film encapsulation layer formed on a substrate; a laser irradiation unit for changing an irradiation direction so that the laser irradiates the thin film encapsulation layer along a determined path; and a suction unit for sucking at least a portion of the separated thin film encapsulation layer.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a device and a method, and more particularly, to a device for manufacturing a display device and a method for manufacturing a display device. Background Art

[0002] A display device includes a display area for displaying an image and a non-display area surrounding the display area. Recently, research has been actively underway on technologies for encapsulating the display area and the non-display area using organic films in order to achieve a thin and lightweight display while maintaining high quality. As one such encapsulation technology, a thin film encapsulation layer having a structure in which inorganic and organic encapsulation layers are alternately stacked can be used.

[0003] On the other hand, the display device described above can be manufactured in multiple configurations on a workbench. If a defect occurs due to foreign matter in a thin film encapsulation layer of the multiple display devices, the defect may spread to the other multiple display devices manufactured on the workbench. Summary of the Invention

[0004] Embodiments of the present disclosure provide a display device manufacturing apparatus and a display device manufacturing method, which, when a display device under manufacturing contains foreign matter, removes at least a portion of a thin film encapsulation layer of a defective display device by laser ablation technology.

[0005] One embodiment of the present disclosure discloses a manufacturing device for a display device, comprising: a generating unit for generating a laser that separates at least a portion of a thin film encapsulation layer formed on a substrate; a laser irradiation unit for changing an irradiation direction so that the laser irradiates the thin film encapsulation layer along a determined path; and a suction unit for suctioning at least a portion of the separated thin film encapsulation layer.

[0006] In one embodiment, the wavelength of the laser may be in the infrared region.

[0007] In one embodiment, the wavelength of the laser may be 1030 nm.

[0008] In one embodiment, the display device manufacturing apparatus may further include an optical system configured to change a path of the laser light between the generating unit and the laser irradiating unit.

[0009] In one embodiment, the suction portion may include: a guide portion including an internal space; and a first suction portion for sucking the thin film encapsulation layer through the internal space.

[0010] In one embodiment, the laser may be irradiated through the inner space.

[0011] In one embodiment, the suction unit may further include: a second suction unit for sucking residual components formed when the laser is irradiated on the thin film encapsulation layer.

[0012] Other embodiments of the present disclosure disclose a method for manufacturing a display device, including: a step of configuring the display device under manufacturing on a workbench, the display device under manufacturing including: a substrate including a display area and a non-display area surrounding at least a portion of the display area; and a thin film encapsulation layer, at least one inorganic encapsulation layer and at least one organic encapsulation layer stacked on the substrate; a step of configuring the thin film encapsulation layer to irradiate a laser on a first portion corresponding to the non-display area; a step of configuring the thin film encapsulation layer to irradiate a laser on a second portion corresponding to the display area; and a step of separating the at least one inorganic encapsulation layer and the at least one organic encapsulation layer from each other.

[0013] In one embodiment, the laser may be irradiated on a first region in the first portion and a second region at least partially overlapping with the first region.

[0014] In one embodiment, the step of irradiating the first portion with the laser may include: irradiating the laser along a first path; and irradiating the laser along a second path different from the first path.

[0015] In one embodiment, the first path and the second path may be separated.

[0016] In one embodiment, the first path may be arranged around at least a portion of the second path.

[0017] In one embodiment, the laser may be irradiated along the first path and then along the second path.

[0018] In one embodiment, in the step of irradiating the second portion with a laser, the laser may be irradiated on a third region and a fourth region spaced apart from the third region in the second portion.

[0019] In one embodiment, after irradiating the first portion with laser light, the second portion with laser light may be irradiated.

[0020] In one embodiment, there may be a plurality of display devices being manufactured on the workbench.

[0021] In one embodiment, the laser light may have a wavelength in the infrared region.

[0022] In one embodiment, the wavelength of the laser may be 1030 nm.

[0023] In one embodiment, the method for manufacturing the display device may further include: checking whether the at least one inorganic encapsulation layer and the at least one organic encapsulation layer are separated.

[0024] Another embodiment of the present disclosure discloses a method for manufacturing a display device, including: a step of configuring a display device on a workbench, the display device including a thin film encapsulation layer having at least one inorganic encapsulation layer and at least one organic encapsulation layer stacked on a substrate, the substrate including a display area and a non-display area surrounding at least a portion of the display area; a step of irradiating a laser on the thin film encapsulation layer corresponding to the non-display area and having a first thickness; a step of irradiating a laser on the thin film encapsulation layer corresponding to the display area and having a second thickness different from the first thickness; and a step of separating the at least one inorganic encapsulation layer and the at least one organic encapsulation layer.

[0025] The effect of disclosure

[0026] As described above, embodiments of the present disclosure may provide a display device manufacturing apparatus that separates at least a portion of a thin film encapsulation layer formed on a substrate by laser ablation technology.

[0027] Furthermore, a method for manufacturing a display device can be provided, which utilizes this method to separate at least a portion of a thin film encapsulation layer formed on a substrate by a laser ablation process during the manufacture of the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 FIG. 1 is a schematic diagram illustrating a manufacturing apparatus for a display device according to an embodiment of the present disclosure.

[0029] Figure 2 is a perspective view showing a trimming portion according to an embodiment.

[0030] Figure 3 FIG. 1 is a plan view schematically showing a display device manufactured using the display device manufacturing apparatus of the present disclosure.

[0031] Figure 4 FIG. 1 is a cross-sectional view briefly showing a display device manufactured using a display device manufacturing apparatus according to an embodiment of the present disclosure.

[0032] Figure 5 4 is a cross-sectional view illustrating a stacked structure of an input sensing portion of a display device manufactured by a manufacturing apparatus for a display device according to an embodiment of the present disclosure.

[0033] Figure 6 It is along Figure 3AA' and BB' cross-sectional views.

[0034] Figure 7 Is to show the use of Figure 1 A perspective view of a method for manufacturing a display device using a manufacturing apparatus for the display device shown.

[0035] Figure 8a 1 is a top view illustrating a step of irradiating a first portion with laser light in a method for manufacturing a display device according to an embodiment of the present disclosure.

[0036] Figure 8b It is magnified Figure 8a An enlarged view of the first part.

[0037] Figure 9a 1 is a top view illustrating a step of irradiating a second portion with a laser beam in a method for manufacturing a display device according to an embodiment of the present disclosure.

[0038] Figure 9b It is magnified Figure 9a An enlarged view of the second part.

[0039] Figure 10 is a perspective view illustrating a step of separating an inorganic encapsulation layer and an organic encapsulation layer in a method for manufacturing a display device according to an embodiment of the present disclosure.

[0040] Description of Reference Numerals

[0041] DA: Display Area

[0042] NDA: Non-display area

[0043] L1a: First path

[0044] L1b: Second path

[0045] S1: First Area

[0046] S2: Second Area

[0047] u1: third area

[0048] u2: The third area

[0049] SPC: Internal Space

[0050] 1: Display device

[0051] 10: Substrate

[0052] 31: First inorganic encapsulation layer

[0053] 32a, 32b: organic encapsulation layer

[0054] 33: Second inorganic encapsulation layer

[0055] 100: Display device manufacturing device

[0056] 110: Workbench

[0057] 120: Guide component

[0058] 130: Gantry

[0059] 140: Mobile Department

[0060] 150: Finishing Department

[0061] 151: Generation Department

[0062] 153: Optical System

[0063] 156: Laser irradiation unit

[0064] 157a: Guide

[0065] 157b: First suction unit

[0066] 157c: Second suction part

[0067] 157: Suction Department

[0068] 160: Inspection Department DETAILED DESCRIPTION

[0069] The present disclosure is susceptible to various modifications and may have various embodiments, specific embodiments of which are illustrated in the accompanying drawings and described in detail in the detailed description. Figure 1 This will become clear from the embodiments described in detail later. However, the present disclosure is not limited to the embodiments disclosed below, and can be implemented in various forms.

[0070] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. When describing with reference to the drawings, identical or corresponding components will be denoted by identical reference numerals, and repeated description thereof will be omitted.

[0071] In the following embodiments, the terms "first" and "second" are not restrictive and are used to distinguish one component from other components.

[0072] In the following embodiments, singular expressions include plural expressions unless otherwise indicated in the context.

[0073] In the following embodiments, the terms including or having mean that the features or constituent elements described in the specification are present, and do not preclude the possibility of adding one or more other features or constituent elements.

[0074] In the following embodiments, when a film, region, component, etc. is expressed as being on or above another part, it includes not only the case where it is directly on the other part, but also the case where other films, regions, components, etc. are interposed therebetween.

[0075] In the drawings, the sizes of the components may be exaggerated or reduced for ease of explanation. For example, since the sizes and thicknesses of the components shown in the drawings are arbitrarily presented for ease of explanation, the present disclosure is not necessarily limited to those shown in the drawings.

[0076] When an embodiment can be implemented differently, a specific process order may be performed differently from the order described. For example, two processes described consecutively may be performed substantially simultaneously, or in the reverse order of the order described.

[0077] In the following embodiments, when films, regions, components, etc. are described as being connected, this includes not only cases where the films, regions, components, etc. are directly connected, but also cases where the films, regions, components, etc. are indirectly connected through the intervening films, regions, components, etc. For example, when films, regions, components, etc. are described as being electrically connected in this specification, this includes not only cases where the films, regions, components, etc. are directly electrically connected, but also cases where the films, regions, components, etc. are indirectly electrically connected through the intervening films, regions, components, etc.

[0078] Figure 1 FIG. 1 is a schematic diagram illustrating a manufacturing apparatus for a display device according to an embodiment of the present disclosure. Figure 2 is a perspective view showing a trimming portion according to an embodiment.

[0079] Reference Figure 1 and Figure 2 The manufacturing apparatus 100 of the display device may include a workbench 110 , a gantry 130 , a moving part 140 , and a finishing part 150 .

[0080] The workbench 110 may include a guide member 120. The workbench 110 may include a line mark (not shown) for aligning the carrier substrate G. In addition, the workbench 110 may also include a substrate moving member (not shown) for aligning the carrier substrate G. In this case, the carrier substrate G can be moved in the x-direction or the y-direction by the substrate moving member.

[0081] The guide member 120 can place the carrier substrate G in the middle on the workbench 110 and space it on both sides. The length of the guide member 120 can be longer than the length of the corner of the carrier substrate G. In this case, the length of the guide member 120 and the length of the corner of the carrier substrate G can be along Figure 1 Measured in the y direction.

[0082] The gantry 130 described below may be disposed on the guide member 120. In one embodiment, the gantry 130 may include a certain rail to enable linear motion along the length of the guide member 120. In particular, the guide member 120 may include a linear motion rail (LM rail).

[0083] The gantry 130 can be mounted on the guide member 120. In one embodiment, the gantry 130 can be mounted on two separate guide members 120. In this case, the gantry 130 can move on the carrier substrate G. The gantry 130 can include a linear motion block (LM block) that moves along a linear motion track. In one embodiment, the gantry 130 can be manually moved linearly. In other embodiments, the gantry 130 can be equipped with a motor, a pneumatic cylinder, or the like to automatically move the linear motion.

[0084] The moving part 140 and the trimming part 150 may be disposed on the gantry 130. In one embodiment, the gantry 130 may include a certain track to enable the moving part 140 to perform linear motion.

[0085] In one embodiment, one moving unit 140 may be provided on the gantry 130. In other embodiments, multiple moving units 140 may be provided on the gantry 130. However, for ease of explanation, the detailed description will focus on the case where one moving unit 140 is provided on the gantry 130.

[0086] The trimming section 150 can be arranged in various ways on the moving section 140. For example, one trimming section 150 can be provided on each moving section 140. As another example, at least one trimming section 150 can be provided on the moving section 140. However, for ease of explanation, the detailed description will focus on the case where one trimming section 150 is provided on each moving section 140.

[0087] The finishing part 150 may include a generating part 151 , an optical system 153 , a laser irradiating part 156 , and a suction part 157 .

[0088] Generator 151 can generate a laser to remove at least a portion of a defective thin film encapsulation layer (TFE) containing foreign matter, as described later. Generator 151 can generate a laser with a wavelength in the infrared region. Preferably, the infrared wavelength can be 1030 nm. In particular, generator 151 can generate an infrared femtosecond laser (IR femto laser). This allows for precise removal of defective thin film encapsulation layers (TFE) containing foreign matter.

[0089] The optical system 153 can be disposed between the laser generating unit 151 and the laser irradiation unit 156. The optical system 153 can focus and refract at least a portion of the laser light. For example, the optical system 153 can include at least one of a lens and a mirror. At least a portion of the laser light can be refracted or reflected by the lens or the mirror, respectively. Thus, the optical system 153 can change the path of the laser light emitted from the laser generating unit 151.

[0090] The laser irradiation unit 156 can change the irradiation direction so that the laser irradiates along a determined path. Specifically, the laser irradiation unit 156 can receive the laser incident through the optical system 153. At this time, the laser irradiation unit 156 can change the irradiation direction of the laser. Therefore, the irradiation direction of the laser can be changed without moving the gantry 130 or the moving unit 140. In particular, the laser irradiation unit 156 can finely change the path of the laser. For example, the gantry 130 or the moving unit 140 can perform linear motion to change the irradiation position of the laser. Therefore, the path of the laser irradiation on the carrier substrate G can be changed in the x direction or the y direction. In this embodiment, the laser irradiation unit 156 can change the irradiation direction of the laser to irradiate a path in the form of a straight line or a curve.

[0091] The suction part 157 may suck at least a portion of the separated thin film encapsulation layer TFE. The suction part 157 may include a guide part 157a, a first suction part 157b, and a second suction part 157c.

[0092] The guide portion 157a may include an internal space SPC, through which at least a portion of the separated thin film encapsulation layer (TFE) passes. The pressure of the internal space SPC can be adjusted by at least one of the first suction portion 157b and the second suction portion 157c. In particular, the pressure of the internal space SPC can be lower than the pressure outside the guide portion 157a. Therefore, at least a portion of the separated thin film encapsulation layer (TFE) can be drawn into the internal space SPC of the guide portion 157a.

[0093] In one embodiment, the laser irradiation unit 156 may be disposed on the guide portion 157a. In this case, the laser light from the laser irradiation unit 156 can pass through the internal space SPC. In this case, the cross-sectional area of ​​the internal space SPC may increase as it moves away from the laser irradiation unit 156. For example, the cross-sectional area of ​​the internal space SPC perpendicular to the z-direction may increase in the -z direction.

[0094] The first suction portion 157b can draw the thin film encapsulation layer TFE through the internal space SPC. In one embodiment, the first suction portion 157b can be positioned adjacent to the guide portion 157a. Specifically, the first suction portion 157b can be connected to the internal space SPC. Thus, the first suction portion 157b can draw the thin film encapsulation layer TFE through the internal space SPC.

[0095] The first suction portion 157b may reduce the pressure of the internal space SPC to be lower than the pressure outside the guide portion 157a, thereby guiding at least a portion of the separated thin film encapsulation layer TFE to be sucked toward the internal space SPC.

[0096] The second suction unit 157c can suck the residual components formed during laser irradiation. In this case, the residual components can be gas. In one embodiment, the second suction unit 157c can be configured to be adjacent to the guide unit 157a. Specifically, the second suction unit 157c can be connected to the internal space SPC. In one embodiment, there can be multiple second suction units 157c. Multiple second suction units 157c can be connected to each internal space SPC. Since the second suction unit 157c sucks the residual components, it is possible to prevent the laser irradiation unit 156 from being contaminated by the residual components.

[0097] The suction unit 157 may further include an air curtain forming unit (not shown) that forms an air curtain to control the remaining components. The air curtain forming unit can form an air curtain and guide the remaining components toward the second suction unit 157c for suction. The air curtain forming unit can have various structures capable of forming an air curtain, such as a spray slit.

[0098] The display device manufacturing apparatus 100 may further include an inspection unit 160 for sensing whether the thin film encapsulation layer TFE is separated. The inspection unit 160 may include a measuring device, for example, a camera, etc.

[0099] In one embodiment, the inspection unit 160 may be disposed on the gantry 130 . In other embodiments, the inspection unit 160 may be disposed on the workbench 110 .

[0100] In one embodiment, the inspection unit 160 may be disposed on the movable unit 140 on which the trimming unit 150 is disposed. In other embodiments, the inspection unit 160 and the trimming unit 150 may be disposed on separate movable units 140. However, for ease of explanation, the detailed description will focus on the case where the inspection unit 160 is disposed on the movable unit 140 on which the trimming unit 150 is disposed.

[0101] The display device manufacturing apparatus 100 described above can remove foreign matter from the thin film encapsulation layer TFE of the display device that causes defects during the manufacturing process of the display device 1. This will be described later. First, the display device 1 manufactured using the display device manufacturing apparatus 100 will be described in detail.

[0102] Figure 3 FIG. 1 is a plan view schematically showing a display device manufactured using the display device manufacturing apparatus of the present disclosure.

[0103] Reference Figure 3The display device 1 may include a display area DA and a non-display area NDA on a substrate 10. The display device 1 may provide an image using light emitted from a plurality of pixels PX arranged in the display area DA. Each pixel PX may emit red, green, blue, or white light. Furthermore, a thin film encapsulation layer TFE may be included on the substrate 10.

[0104] The display device 1, as a device for displaying images, may be a portable mobile device such as a game console, a multimedia machine, or an ultra-small PC. The display device 1 described below may include a liquid crystal display device (Liquid Crystal Display), an electrophoretic display device (Electrophoretic Display), an organic light emitting display device (Organic Light Emitting Display), an inorganic EL display device (Inorganic Light Emitting Display), a field emission display device (Field Emission Display), a surface-conduction electron-emitter Display (Surface-conduction Electron-emitter Display), a quantum dot display device (Quantum dot display), a plasma display device (Plasma Display), a cathode ray display device (Cathode Ray Display), etc. In the following, as a display device 1 manufactured by a manufacturing device for a display device according to an embodiment of the present disclosure, an organic light emitting display device is used as an example for description, but the embodiment of the present disclosure can be used for the manufacture of display devices in various ways as described above.

[0105] The non-display area NDA may surround at least a portion of the display area DA. In one embodiment, the non-display area NDA may be configured to surround the display area DA. The non-display area NDA may be configured with circuit wiring and the like.

[0106] The pixels PX may be electrically connected to the scan lines SL and the data lines DLn, respectively. The scan lines SL may extend in the x-direction, and the data lines DLn may extend in the y-direction.

[0107] The thin film encapsulation layer TFE may include a first portion TFEa configured to correspond to the non-display area NDA and a second portion TFEb configured to correspond to the display area DA.

[0108] Figure 4 FIG. 1 is a cross-sectional view briefly showing a display device manufactured using a display device manufacturing apparatus according to an embodiment of the present disclosure.

[0109] Reference Figure 4A display layer DL may be configured on the substrate 10 of the display device 1. The display layer DL may include: a pixel circuit layer PCL including pixel circuits and an insulating layer; and a display element layer DEL including a plurality of display elements on the pixel circuit layer PCL.

[0110] The substrate 10 may include glass or a polymer resin such as polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate (PC), triacetyl cellulose (TAC), or cellulose acetate propionate.

[0111] A barrier layer (not shown) may be further provided between the pixel circuit layer PCL and the substrate 10. The barrier layer is a barrier layer that prevents the penetration of foreign matter and may include silicon nitride (SiN x , x>0), silicon oxide (SiO x , x>0) or other inorganic single or multilayers.

[0112] The display element layer DEL may include display elements, such as the organic light-emitting diode (OLED) described above. The pixel circuit layer PCL may include pixel circuits connected to each organic light-emitting diode (OLED) and an insulating layer. The pixel circuit layer PCL may include multiple transistors and storage capacitors, with an insulating layer interposed therebetween.

[0113] The display element can be covered with an encapsulation component such as a thin film encapsulation layer TFE. The thin film encapsulation layer TFE may include at least one inorganic encapsulation layer and at least one organic encapsulation layer covering the display element layer DEL. The inorganic encapsulation layer may contain one or more inorganic substances selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layer may contain a polymer-like substance. As polymer-like materials, acrylic resin, epoxy resin, polyimide, polyethylene, etc. may be included. As an embodiment, the organic encapsulation layer may include acrylate.

[0114] An input sensing portion TSL including a touch electrode may be configured on the thin film encapsulation layer TFE, and an optical function layer OFL may be configured on the input sensing portion TSL. The input sensing portion TSL may obtain coordinate information based on external pressure, such as a touch event. The optical function layer OFL may reduce the reflectivity of light (external light) incident from the outside toward the display device 1, and / or may improve the color purity of the light emitted from the display device 1. As one embodiment, the optical function layer OFL may include a phase retarder and a polarizer. The phase retarder may be a film type or a liquid crystal coating type, and may include a λ / 2 phase retarder and / or a λ / 4 phase retarder. The polarizer may also be a film type or a liquid crystal coating type. The film type may include an extended synthetic resin film, and the liquid crystal coating type may include liquid crystals arranged in a predetermined arrangement. The phase retarder and the polarizer may also include a protective film.

[0115] As another embodiment, the optical functional layer OFL may include a black matrix and a color filter. The color filters may be arranged according to the hue of the light emitted from each pixel of the display device 1. Each color filter may include a red, green, or blue pigment or dye. Alternatively, each color filter may include quantum dots in addition to the aforementioned pigments or dyes. Alternatively, a portion of the color filter may not include the aforementioned pigments or dyes and may include scattering particles such as titanium oxide.

[0116] As another embodiment, the optical function layer OFL may include a destructive interference structure. The destructive interference structure may include a first reflective layer and a second reflective layer disposed on different layers. The first reflected light and the second reflected light, respectively reflected by the first reflective layer and the second reflective layer, may destructively interfere with each other, thereby reducing the external light reflectivity.

[0117] An adhesive component may be disposed between the input sensing portion TSL and the optical function layer OFL. The adhesive component may be any general component known in the art without limitation. The adhesive component may be a pressure sensitive adhesive (PSA).

[0118] Figure 5 4 is a cross-sectional view illustrating a stacked structure of an input sensing portion of a display device manufactured using a manufacturing apparatus for a display device according to an embodiment of the present disclosure.

[0119] Reference Figure 5 , the input sensing part TSL may include at least one inorganic layer and a sensing electrode.

[0120] The input sensing portion TSL may include alternately stacked insulating layers and conductive layers. In one embodiment, the input sensing portion TSL may include a first insulating layer 41, a first conductive layer 43, a second insulating layer 45, a second conductive layer 47, and a third insulating layer 49. The first conductive layer 43 and the second conductive layer 47 may be connected via contact holes (not shown). A sensing electrode may be included in at least one of the first conductive layer 43 and the second conductive layer 47.

[0121] The first conductive layer 43 or the second conductive layer 47 may include a metal layer or a transparent conductive layer. The metal layer may include molybdenum (Mo), mendelevium (Md), silver (Ag), titanium (Ti), copper (Cu), aluminum (Al), and alloys thereof. The transparent conductive layer may include a transparent conductive oxide such as ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), or ITZO (indium tin zinc oxide). In addition, the transparent conductive layer may include a conductive polymer such as PEDOT (3,4-ethylenedioxythiophene polymer), metal nanowires, graphene, etc.

[0122] The first conductive layer 43 or the second conductive layer 47 can be a single layer or multiple layers. The single layer first conductive layer 43 or the second conductive layer 47 can include a metal layer or a transparent conductive layer, and the materials of the metal layer and the transparent conductive layer are as described above. One of the first conductive layer 43 and the second conductive layer 47 can include a single metal layer. One of the first conductive layer 43 and the second conductive layer 47 can include multiple metal layers. The multiple metal layers can, for example, include three layers of titanium layer / aluminum layer / titanium layer or two layers of molybdenum layer / mendelevium layer. Alternatively, the multiple metal layers can include a metal layer and a transparent conductive layer. The first conductive layer 43 and the second conductive layer 47 can have different stacked layer structures or the same stacked layer structure. For example, the first conductive layer 43 can include a metal layer and the second conductive layer 47 can include a transparent conductive layer. Alternatively, the first conductive layer 43 and the second conductive layer 47 can include the same metal layer.

[0123] The materials of first and second conductive layers 43 and 47, as well as the configuration of the sensing electrodes therein, can be determined based on sensing sensitivity. RC (resistance-capacitance) delay can affect sensing sensitivity. Sensing electrodes comprising a metal layer, due to their lower resistance than a transparent conductive layer, can reduce the RC value, thereby shortening the charging time of the capacitor defined between the sensing electrodes. Sensing electrodes comprising a transparent conductive layer are less visible to the user than metal layers, increasing the input area and thereby increasing capacitance.

[0124] The first insulating layer 41, the second insulating layer 45, and the third insulating layer 49 may each comprise an inorganic insulator and / or an organic insulator. The inorganic insulator may comprise silicon oxide, silicon nitride, or silicon oxynitride, and the organic insulator may comprise a polymeric organic material. In some embodiments, the first insulating layer 41 may be omitted.

[0125] Figure 6 It is along Figure 3 The A-A' and B-B' cross-sectional views. Figure 6 In, with Figure 4 The same reference numerals refer to the same components, and repeated descriptions are omitted.

[0126] Reference Figure 6 In the display area DA, a display layer DL, a thin film encapsulation layer TFE, and an input sensing portion TSL may be disposed on the substrate 10. The display layer DL may include a pixel circuit layer PCL and a display element layer DEL.

[0127] A pixel circuit layer PCL may be disposed on the substrate 10 . Figure 6 The pixel circuit layer PCL includes a thin film transistor TFT, and a buffer layer 11, a first gate insulating layer 13a, a second gate insulating layer 13b, an interlayer insulating layer 15, and a planarizing insulating layer 17 arranged below and / or above the components of the thin film transistor TFT.

[0128] The buffer layer 11 may include inorganic insulating materials such as silicon nitride, silicon oxynitride, and silicon oxide, and may be a single layer or multiple layers including the aforementioned inorganic insulating materials.

[0129] The thin film transistor (TFT) may include a semiconductor layer 12 comprising polycrystalline silicon. Alternatively, the semiconductor layer 12 may comprise amorphous silicon, an oxide semiconductor, or an organic semiconductor. The semiconductor layer 12 may include a channel region 12c, a drain region 12a, and a source region 12b, respectively disposed on either side of the channel region 12c. The gate electrode 14 may overlap the channel region 12c.

[0130] The gate electrode 14 may include a low-resistance metal material, such as molybdenum (Mo), aluminum (Al), copper (Cu), or titanium (Ti), and may be formed as a multilayer or single layer of the aforementioned materials.

[0131] The first gate insulating layer 13a between the semiconductor layer 12 and the gate electrode 14 may include silicon oxide (SiO2), silicon nitride (SiN x), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2) or zinc oxide (ZnO2) and other inorganic insulators.

[0132] The second gate insulating layer 13b may be provided to cover the gate electrode 14. The second gate insulating layer 13b may include silicon oxide (SiO2), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2) or zinc oxide (ZnO2) and other inorganic insulators.

[0133] The upper electrode Cst2 of the storage capacitor Cst can be disposed above the second gate insulating layer 13b. The upper electrode Cst2 can overlap the gate electrode 14 thereunder. In this case, the overlapping gate electrode 14 and the upper electrode Cst2 with the second gate insulating layer 13b interposed therebetween can form a storage capacitor Cst. In other words, the gate electrode 14 can function as the lower electrode Cst1 of the storage capacitor Cst.

[0134] As described above, the storage capacitor Cst and the thin film transistor TFT may be formed to overlap. In some embodiments, the storage capacitor Cst may also be formed to not overlap with the thin film transistor TFT.

[0135] The upper electrode Cst2 may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and / or copper (Cu), and may be a single layer or multiple layers of the foregoing substances.

[0136] The interlayer insulating layer 15 may cover the upper electrode Cst2. The interlayer insulating layer 15 may include silicon oxide (SiO2), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO2). The interlayer insulating layer 15 may be a single layer or multiple layers containing the aforementioned inorganic insulating materials.

[0137] The buffer layer 11 , the first gate insulating layer 13 a , the second gate insulating layer 13 b , and the interlayer insulating layer 15 as described above may be configured to extend from the display area DA to the non-display area NDA.

[0138] The drain electrode 16a and the source electrode 16b can be respectively located on the interlayer insulating layer 15. The drain electrode 16a and the source electrode 16b can include a material with good conductivity. The drain electrode 16a and the source electrode 16b can include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and can be formed into a multilayer or single layer including the aforementioned materials. As one embodiment, the drain electrode 16a and the source electrode 16b can have a multilayer structure of Ti / Al / Ti.

[0139] The planarization insulating layer 17 may include an organic insulating layer. The planarization insulating layer 17 may include a general-purpose polymer such as polymethylmethacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluoropolymer, a paraxylene polymer, a vinyl alcohol polymer, or a mixture thereof.

[0140] The display element layer DEL is configured on the pixel circuit layer PCL of the aforementioned structure. The display element layer DEL includes an organic light emitting diode OLED, and the pixel electrode 21 of the organic light emitting diode OLED can be electrically connected to the thin film transistor TFT through the contact hole of the planarization insulating layer 17 .

[0141] The pixel PX may include an organic light emitting diode (OLED) and a thin film transistor (TFT). Each pixel PX may emit red, green, or blue light, or emit red, green, blue, or white light through the organic light emitting diode (OLED).

[0142] The pixel electrode 21 may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). As another embodiment, the pixel electrode 21 may include a reflective film containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof. As another embodiment, the pixel electrode 21 may further include a film formed of ITO, IZO, ZnO, or In2O3 above / below the aforementioned reflective film.

[0143] A pixel defining film 19 having an opening 19OP exposing the central portion of the pixel electrode 21 is disposed on the pixel electrode 21. The pixel defining film 19 may comprise an organic insulator and / or an inorganic insulator. The opening 19OP may define a light-emitting area (hereinafter referred to as the light-emitting area, EA) for light emitted from the organic light-emitting diode OLED. For example, the width of the opening 19OP may be equivalent to the width of the light-emitting area EA.

[0144] The light emitting layer 22 may be disposed in the opening 19OP of the pixel defining film 19. The light emitting layer 22 may include a polymer or a low-molecular organic substance that emits light of a predetermined hue.

[0145] Although not shown in the figure, a first functional layer and a second functional layer can be respectively arranged below and above the light-emitting layer 22. The first functional layer can, for example, include a hole transport layer (HTL), or include a hole transport layer and a hole injection layer (HIL). The second functional layer is optional as a component arranged above the light-emitting layer 22. The second functional layer can include an electron transport layer (ETL) and / or an electron injection layer (EIL). The first functional layer and / or the second functional layer can be formed as a common layer that covers the entire substrate 10 in the same manner as the common electrode 23 described later.

[0146] The common electrode 23 can be made of a conductive material with a low work function. For example, the common electrode 23 can include a (semi-)transparent layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or alloys thereof. In addition, the common electrode 23 can further include a layer of ITO, IZO, ZnO, or In2O3 on the (semi-)transparent layer containing the aforementioned materials.

[0147] The thin film encapsulation layer (TFE) may include a first portion (TFEa) corresponding to the non-display area (NDA) and a second portion (TFEb) corresponding to the display area (DA). In one embodiment, the first thickness (t1) of the first portion (TFEa) and the second thickness (t2) of the second portion (TFEb) may be different. Specifically, the second thickness (t2) may be thicker than the first thickness (t1). In particular, the organic encapsulation layer of the second portion (TFEb) may be thicker than the organic encapsulation layer of the first portion (TFEa).

[0148] While the second portion TFEb is thickly constructed to protect the organic light-emitting diode (OLED) disposed in the display area DA and prevent moisture and oxygen from penetrating, the first portion TFEa, which covers the non-display area NDA, does not have an organic light-emitting diode (OLED) disposed beneath it. Therefore, a thick first portion TFEa is unnecessary to protect the organic light-emitting diode (OLED). Therefore, the first thickness t1 of the first portion TFEa and the second thickness t2 of the second portion TFEb can be different.

[0149] In one embodiment, the thin film encapsulation layer TFE includes at least one inorganic encapsulation layer and at least one organic encapsulation layer. Figure 6 The thin film encapsulation layer TFE is shown to include a first inorganic encapsulation layer 31 , organic encapsulation layers 32 a and 32 b , and a second inorganic encapsulation layer 33 stacked in sequence.

[0150] The first inorganic encapsulation layer 31 and the second inorganic encapsulation layer 33 may include one or more inorganic materials selected from the group consisting of aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layers 32a and 32b may include polymer materials. Polymer materials may include acrylic resin, epoxy resin, polyimide, and polyethylene. In one embodiment, the organic encapsulation layers 32a and 32b may include acrylate.

[0151] Hereinafter, a method for manufacturing the display device 1 using the display device manufacturing apparatus 100 will be described in detail.

[0152] Figure 7 Is to show the use of Figure 1 A perspective view of a method for manufacturing a display device and a manufacturing apparatus for a display device shown in FIG. Figure 7 In, with Figure 1 or Figure 2 The same reference numerals refer to the same components, and repeated descriptions are omitted.

[0153] Reference Figure 7 , the unit M may be configured on a carrier substrate G. In one embodiment, the unit M may include a substrate 10 (refer to Figure 4 ) and display layer DL (refer to Figure 4 The carrier substrate G may be glass. In one embodiment, the unit M may be configured singly on the carrier substrate G. In other embodiments, a plurality of units M may be configured as a single unit on the carrier substrate G. In this case, each unit M may be separated into a plurality of units corresponding to respective display devices. The following detailed description focuses on the case where a plurality of units M are configured as a single unit on the carrier substrate G.

[0154] Thin-film encapsulation layers (TFE) can be formed on each of the multiple units M. In this case, the units M and the thin-film encapsulation layers (TFE) can be collectively referred to as a display device under manufacture. In this case, a particular thin-film encapsulation layer (TFE) may contain foreign matter (P). Foreign matter (P) can reduce the adhesion between the thin-film encapsulation layer (TFE) and the units M, causing problems such as moisture permeability. Therefore, thin-film encapsulation layers (TFE) containing foreign matter (P) may cause defects.

[0155] In one embodiment, after the thin film encapsulation layer TFE is formed in the unit M, it is possible to separately inspect whether the thin film encapsulation layer TFE contains foreign matter P. In another embodiment, the input sensing portion TSL (see FIG. 1 ) may be formed in the unit M. Figure 5 After forming at least one inorganic layer and at least one of the sensing electrodes in the cell M, the thin film encapsulation layer TFE is separately inspected for foreign matter P. However, for ease of explanation, the following detailed description focuses on the case of inspecting whether the thin film encapsulation layer TFE contains foreign matter P after the thin film encapsulation layer TFE is formed in the cell M.

[0156] If foreign matter P is contained in one of the thin film encapsulation layers TFE formed in the plurality of units M, the carrier substrate G on which the units M are arranged can be placed on the workbench 110. In this case, the carrier substrate G can be placed on the workbench 110 in a variety of ways. For example, the carrier substrate G can be placed on the workbench 110 using a robotic arm. As another example, a user can manually supply the carrier substrate G to the workbench 110 using an additional tool.

[0157] Next, the gantry 130 (see Figure 1 ) or the moving part 140 (refer to Figure 1 ) is moved, and laser irradiation section 156 and suction section 157 are positioned to correspond to the thin film encapsulation layer TFE containing foreign matter P. In this case, laser irradiation section 156 and suction section 157 can be positioned to be separated from the thin film encapsulation layer TFE. Therefore, when laser irradiation section 156 irradiates the laser, at least one of the laser irradiation section 156 and suction section 157 does not contact the thin film encapsulation layer TFE, and scratches are avoided. This reduces process risks.

[0158] Next, the thin film encapsulation layer TFE may be irradiated with laser. In one embodiment, the thin film encapsulation layer TFE may be irradiated with laser. In another embodiment, an input sensing portion TSL is formed on the thin film encapsulation layer TFE (refer to FIG. Figure 5 In the case where at least one of the at least one inorganic layer and the sensing electrode is formed, the laser may be irradiated onto at least one of the at least one inorganic layer and the sensing electrode. For ease of explanation, the following detailed description focuses on the case where the laser is irradiated onto the thin film encapsulation layer TFE.

[0159] In this embodiment, the laser light may have a wavelength in the infrared region, and preferably, the laser light may have a wavelength of 1030 nm.

[0160] Although the substrate 10 (see Figure 6 ) or pixel circuit layer PCL (refer to Figure 6 ) has a high absorption rate for wavelengths in the ultraviolet region, but a low absorption rate for wavelengths in the infrared region, and a high surface reflectivity. If the irradiated laser has a wavelength in the ultraviolet region, deformation may occur in the substrate 10 or the pixel circuit layer PCL due to the high absorption rate. In this case, the organic light emitting diode OLED (refer to Figure 6 ) may cause moisture permeation due to a deformed substrate 10 or pixel circuit layer PCL. However, in this embodiment, since the laser irradiates with a wavelength in the infrared region, the low light absorption rate at the substrate 10 or pixel circuit layer PCL prevents deformation. Therefore, the organic light emitting diode OLED is protected from moisture permeation.

[0161] In addition, for wavelengths in the infrared region, the first inorganic encapsulating layer 31 (see Figure 6 ) and organic encapsulation layers 32a, 32b (refer to Figure 6 ) and between the organic encapsulation layers 32a, 32b and the second inorganic encapsulation layer 33 (refer to Figure 6 ), a phenomenon of ring disconnection between molecules or atoms, i.e., an optical reaction, may mainly occur. As a result, the adhesion between the layers may be weakened, and separation may occur in at least one of the first inorganic encapsulating layer 31 and the organic encapsulating layers 32a, 32b and the second inorganic encapsulating layer 33.

[0162] In this embodiment, since the thin film encapsulation layer TFE needs to be irradiated as a whole, the laser beam may be a Gaussian beam, which means a beam whose amplitude distribution on a cross section perpendicular to the optical axis is represented by a Gaussian function.

[0163] Figure 8a FIG. 1 is a top view illustrating a step of irradiating a first portion TFEa with laser light in a method of manufacturing a display device according to an embodiment of the present disclosure. Figure 8b It is magnified Figure 8a Magnified view of the first part TFEa in.

[0164] Reference Figure 8a , the laser may be irradiated onto a first portion TFEa of the thin film encapsulation layer TFE configured to correspond to the non-display area NDA.

[0165] The laser may be irradiated along a first irradiation path L1. Specifically, the first irradiation path L1 may be a closed curve. The first irradiation path L1 may be configured around at least a portion of the display area DA. For example, the first irradiation path L1 may be configured around the display area DA.

[0166] The first irradiation path L1 may have a curvature. Therefore, the laser may be irradiated along the first irradiation path L1 having the curvature. For example, the display area DA may include a corner C having a curvature. In this case, the first irradiation path L1 may have a curvature to correspond to the corner C.

[0167] The reason why the laser beam can be irradiated along the first irradiation path L1 having a curvature as described above is because the laser beam irradiation unit 156 (see Figure 2 ) can change the irradiation direction of the laser. Therefore, it is possible to change the irradiation direction of the laser without moving the gantry 130 (refer to Figure 1 ) or the moving part 140 (refer to Figure 1 ) in the case of finely changing the first irradiation path L1 of the laser.

[0168] In one embodiment, the laser may be irradiated repeatedly for multiple times. Preferably, the laser may be irradiated repeatedly for 5 times. In this case, the laser may be irradiated along different first irradiation paths L1.

[0169] Reference Figure 8b The laser can be irradiated multiple times. For example, the laser can be irradiated along the first path L1a and the laser can be irradiated along the second path L1b. Alternatively, if the laser is irradiated five times, the laser can be irradiated along the first path L1a, the second path L1b, the third path L1c, the fourth path L1d, and the fifth path L1e.

[0170] The first path L1a may be separated from the second path L1b. Furthermore, the first through fifth paths L1a through L1e may be separated from one another. In one embodiment, the spacing between adjacent paths in the first through fifth paths L1a through L1e may be the same. In this case, the spacing d1 between the fourth and fifth paths L1d through L1e may be approximately 50 μm. In other embodiments, the spacing between adjacent paths in the first through fifth paths L1a through L1e may differ from at least one spacing between adjacent paths in the first through fifth paths L1a through L1e. For ease of explanation, the following detailed description focuses on the case where the spacing between adjacent paths in the first through fifth paths L1a through L1e is the same.

[0171] In one embodiment, the first path L1a and the second path L1b may be parallel. Therefore, the first path L1a may be arranged around at least a portion of the second path L1b. For example, the first path L1a and the second path L1b may each have a closed curve. In this case, the second path L1b may be surrounded by the first path L1a.

[0172] In one embodiment, laser irradiation may be performed along the first path L1a before irradiation along the second path L1b. For example, laser irradiation may be performed along the outermost first path L1a, followed by irradiation along the second path L1b surrounded by the first path L1a. Subsequently, laser irradiation may be performed along the third path L1c surrounded by the second path L1b. In this manner, laser irradiation may be repeated from the outermost first path L1a to the innermost fifth path L1e.

[0173] In other embodiments, laser irradiation may be performed along the second path L1b before irradiation along the first path L1a. For example, laser irradiation may be performed along the second path L1b before irradiation along the first path L1a surrounding the second path L1b. Alternatively, laser irradiation may be performed along the third path L1c before irradiation along the second path L1b. In this manner, laser irradiation may be repeated from the fifth path L1e, located at the innermost side, to the first path L1a, located at the outermost side.

[0174] In this embodiment, the laser may be continuously irradiated along the first irradiation path L1. Specifically, the laser may irradiate the first region S1 and the second region S2. The first region S1 and the second region S2 may at least partially overlap.

[0175] In one embodiment, when the laser irradiation portion 156 (refer to Figure 3 ) When laser irradiation is performed, laser energy, which is generally normally distributed relative to the center of the first region S1, can be delivered to the first portion TFEa. The diameter D1 of the first region S1 can be defined as the portion corresponding to the center of the first region S1 that receives the same energy value as the total average value of the energy applied to the first region S1. In this case, the diameter D1 of the first region S1 can be 70 μm.

[0176] The reason for irradiating the laser so that the first area S1 and the second area S2 overlap at least in part as described above may be to separate the organic encapsulation layer and the inorganic encapsulation layer of the first part TFEa. Since the thickness of the organic encapsulation layer of the first part TFEa is thinner than the thickness of the organic encapsulation layer of the second part TFEb, the optical reaction in the first part TFEa may not be stronger than that in the second part TFEb. Therefore, if a laser with a wavelength in the infrared region is irradiated to separate the first area S1 and the second area S2, the organic encapsulation layer and the inorganic encapsulation layer may not be separated in the first part TFEa. In this embodiment, the pulse energy of the laser is concentrated and transmitted so that the first area S1 and the second area S2 overlap at least in part, thereby separating the organic encapsulation layer and the inorganic encapsulation layer.

[0177] Figure 9a FIG. 1 is a top view illustrating a step of irradiating a second portion TFEb with a laser in a method for manufacturing a display device according to an embodiment of the present disclosure. Figure 9b It is magnified Figure 9a Magnified view of the second part TFEb in .

[0178] Reference Figure 9a , the laser may be irradiated on the second portion TFEb configured to correspond to the display area DA in the thin film encapsulation layer TFE.

[0179] The laser can be irradiated along the second irradiation path L2. In one embodiment, the second irradiation path L2 can extend in a zigzag shape. For example, the second irradiation path L2 can extend along a first direction (e.g., the x direction) in a portion of the display area DA, and extend along a second direction (e.g., the -x direction) opposite to the first direction in the rest of the display area DA. In other embodiments, the second irradiation path L2 can extend along the first direction in the display area DA and extend in a third direction (e.g., the -y direction) that intersects the first direction. The following detailed description focuses on the case where the second irradiation path L2 extends in a zigzag shape.

[0180] In one embodiment, the laser may be repeatedly irradiated multiple times. Preferably, the laser may be repeatedly irradiated twice. In other embodiments, the laser may be irradiated once.

[0181] Reference Figure 9b, the laser can be irradiated along the second irradiation path L2. In this case, the second irradiation path L2 can extend in a zigzag pattern. For example, in the first row L1, the second irradiation path L2 can be in the x direction. In the second row L2, the second irradiation path L2 can be in the -x direction. In the third row L3, the second irradiation path L2 can be in the x direction. In the fourth row L4, the second irradiation path L2 can be in the -x direction. This configuration of the second irradiation path L2 can be repeated until a predetermined row has been set.

[0182] In this embodiment, the laser may be irradiated to the third region u1 and the fourth region u2 separated from the third region u1 in the second portion TFEb. The reason for irradiating the third region u1 and the fourth region u2 separated from each other may be to prevent the substrate 10 (see FIG. 1 ) from being exposed to the laser beam inside the display area DA. Figure 6 ) or pixel circuit layer PCL (refer to Figure 6 ) to separate the organic and inorganic encapsulation layers of the second portion of TFEb. If laser irradiation causes at least a portion of the third region u1 and the fourth region u2 to overlap, the substrate 10 or the pixel circuit layer PCL beneath the display element layer DEL may be processed by the laser irradiation. Therefore, to prevent processing of the substrate 10 or the pixel circuit layer PCL, laser irradiation can be performed to separate the third and fourth regions u1 and u2.

[0183] Furthermore, because the organic encapsulation layer in the second portion TFEb is thicker than that in the first portion TFEa, the second portion TFEb exhibits a stronger optical reaction than the first portion TFEa when irradiated with infrared wavelengths. In this case, while the area between the third region u1 and the fourth region u2 is not directly irradiated with laser light, it indirectly weakens the interlayer adhesion of the second portion TFEb. Therefore, even without irradiating the entire second portion TFEb with laser light, the thin film encapsulation layer TFE can be separated. This reduces laser processing time.

[0184] In this embodiment, the distance d2 between the center of the third region u1 and the center of the fourth region u2 may be less than 130 μm. If the distance d2 between the center of the third region u1 and the center of the fourth region u2 exceeds 130 μm, the optical reaction between the third region u1 and the fourth region u2 may not be sufficiently performed, and the possibility of separation of the thin film encapsulation layer TFE may be reduced.

[0185] In one embodiment, the diameter D2 of the third region u1 may also be the same as that of the first region S1 (see Figure 8b The diameter D2 of the third region u1 may be 70 μm.

[0186] Due to the laser irradiation as described above, the adhesive force between at least one of the first inorganic encapsulating layer 31 and the organic encapsulating layers 32a and 32b and between the organic encapsulating layers 32a and 32b and the second inorganic encapsulating layer 33 may be weakened. At this time, a gap may be generated in at least one of the first inorganic encapsulating layer 31 and the organic encapsulating layers 32a and 32b and between the organic encapsulating layers 32a and 32b and the second inorganic encapsulating layer 33.

[0187] In one embodiment, the first portion TFEa may be irradiated with laser light before the second portion TFEb is irradiated with laser light. In other embodiments, the first portion TFEa may be irradiated with laser light before the second portion TFEb is irradiated with laser light.

[0188] When the laser is irradiated on the thin film encapsulation layer TFE, residual components may be formed. The residual components can be sucked by the second suction unit 157c. Alternatively, an air curtain forming unit (not shown) can form an air curtain to guide the residual components to be sucked by the second suction unit 157c.

[0189] Figure 10 is a perspective view illustrating a step of separating an inorganic encapsulation layer and an organic encapsulation layer in a method for manufacturing a display device according to an embodiment of the present disclosure.

[0190] Reference Figure 10 At least one of the first inorganic encapsulation layer and the organic encapsulation layer and the organic encapsulation layer and the second inorganic encapsulation layer in the thin film encapsulation layer TFE may be separated. Specifically, the suction part 157 may suck a portion of the thin film encapsulation layer TFE1.

[0191] In one embodiment, a portion of the thin film encapsulation layer TFE1 may include at least one of an organic encapsulation layer and a second inorganic encapsulation layer. In this case, the remaining portion of the thin film encapsulation layer TFE2 may include the remainder of the thin film encapsulation layer TFE. In other embodiments, a portion of the thin film encapsulation layer TFE1 may include at least one of a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer.

[0192] Therefore, at least a portion of the thin film encapsulation layer TFE formed on the substrate can be separated during display device manufacturing. Removing the thin film encapsulation layer TFE containing foreign matter P can fundamentally prevent the possibility of film warping caused by defective thin film encapsulation layer TFE during subsequent display device manufacturing processes.

[0193] Thus, the present disclosure has been described with reference to one embodiment shown in the accompanying drawings. However, this is merely illustrative, and a person skilled in the art will appreciate that various modifications and variations of the embodiments are possible. Therefore, the true scope of protection of the present disclosure should be determined by the technical concepts of the appended claims.

Claims

1. A manufacturing device for a display device, wherein: include: a generating unit for generating laser light for separating at least a portion of a thin film encapsulation layer formed on a substrate; a laser irradiation unit configured to change an irradiation direction so that the laser irradiates the thin film encapsulation layer along a determined path; and a suction unit for sucking at least a portion of the separated thin film encapsulation layer; The path includes a plurality of irradiation paths, the plurality of irradiation paths being irradiation paths in each of mutually different regions of the thin film encapsulation layer, and irradiation pitches of the laser light in each of the plurality of irradiation paths being different from each other.

2. The manufacturing apparatus of a display device according to claim 1, wherein: The wavelength of the laser light is in the infrared region.

3. The manufacturing apparatus of a display device according to claim 2, wherein: The wavelength of the laser is 1030 nm.

4. The manufacturing apparatus of a display device according to claim 1, wherein: The manufacturing device of the display device further includes: The optical system changes the path of the laser light between the generating unit and the laser irradiating unit.

5. The manufacturing apparatus of a display device according to claim 1, wherein: The suction portion includes: a guide portion including an interior space; and The first suction unit sucks the thin film encapsulation layer through the internal space.

6. The manufacturing apparatus of a display device according to claim 5, wherein: The laser light is irradiated through the inner space.

7. The manufacturing apparatus of a display device according to claim 5, wherein: The suction portion further comprises: The second suction unit sucks residual components formed when the thin film encapsulation layer is irradiated with the laser.

8. A method for manufacturing a display device, wherein: include: The step of placing a display device under manufacture on a workbench, the display device under manufacture comprising: a substrate including a display area and a non-display area surrounding at least a portion of the display area; and a thin film encapsulation layer, wherein at least one inorganic encapsulation layer and at least one organic encapsulation layer are stacked on the substrate; irradiating a laser on a first portion of the thin film encapsulation layer that is configured to correspond to the non-display area and has a first thickness; irradiating a laser on a second portion of the thin film encapsulation layer that is configured to correspond to the display area and has a second thickness different from the first thickness; and A step of separating the at least one inorganic encapsulating layer and the at least one organic encapsulating layer from each other in the display area.

9. The method for manufacturing a display device according to claim 8, wherein: The laser light is irradiated on a first region in the first portion and a second region at least partially overlapping with the first region.

10. The method for manufacturing a display device according to claim 8, wherein: The step of irradiating the laser on the first portion includes: irradiating the laser light along a first path; and a step of irradiating the laser light along a second path different from the first path.

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