Device, system and method for ion trap

Abstract

The present invention is entitled an apparatus, system and method for an ion trap. The present invention provides an ion trap apparatus. The ion trap apparatus includes two or more radio frequency (RF) rails formed with substantially parallel longitudinal axes and having substantially coplanar upper surfaces; and two or more sequences of capture and / or transmission (TT) electrodes, wherein each sequence is formed to extend substantially parallel to the substantially parallel longitudinal axes of the RF rails. The two or more RF rails and the two or more sequences of TT electrodes define an ion trap. The two or more sequences of TT electrodes are arranged into a plurality of zones. Each zone includes a wide matching group of the TT electrodes and at least one narrow matching group of the TT electrodes. The wide TT electrodes are longer and / or wider than the narrow TT electrodes in a direction substantially parallel to the substantially parallel longitudinal axes of the RF rails.

Description

Technical Field

[0001] Various embodiments are directed to apparatus, systems, and methods for ion traps. Background Art

[0002] Ion traps can use a combination of electric and magnetic fields to capture one or more ions in a potential trap. Ions can be trapped for a number of purposes, which may include, for example, mass spectrometry, research, and / or control of quantum states. Through effort, wisdom, and innovation, many of the deficiencies of such previous ion traps have been addressed by developing solutions constructed in accordance with embodiments of the present invention, many examples of which are described in detail herein. Summary of the invention

[0003] Exemplary embodiments provide an ion trap device, a quantum computer including the ion trap device, a quantum computer system including the ion trap device, and the like.

[0004] In an exemplary embodiment, an ion trap device is provided. The ion trap device includes: two or more radio frequency (RF) rails formed with substantially parallel longitudinal axes and having substantially coplanar upper surfaces; and two or more sequences of capture and / or transmission (TT) electrodes, wherein each sequence is formed to extend substantially parallel to the substantially parallel longitudinal axes of the two or more RF rails. The two or more RF rails and the two or more sequences of TT electrodes define an ion trap. In an exemplary embodiment, the ion trap is a surface planar ion trap. The two or more sequences of TT electrodes are arranged into a plurality of zones. Each zone includes a wide matching group of TT electrodes and at least one narrow matching group of TT electrodes. The wide TT electrodes of a wide matching group of TT electrodes are longer and / or wider than the narrow TT electrodes of at least one narrow matching group of TT electrodes in a direction substantially parallel to the substantially parallel longitudinal axes of the two or more RF rails.

[0005] In an exemplary embodiment, each zone includes two wide matching groups of TT electrodes, and at least one narrow matching group of TT electrodes is disposed between the two wide matching groups of TT electrodes. In an exemplary embodiment, each wide TT electrode in the wide matching group of TT electrodes is at least approximately twice as wide as a narrow TT electrode of at least one narrow matching group of TT electrodes in a direction substantially parallel to the substantially parallel longitudinal axes of the RF rails. In an exemplary embodiment, (a) the plurality of zones include at least one action zone and at least one intermediate zone, (b) at least one action zone is configured to perform an action on at least one ion within the at least one action zone, and (c) at least one intermediate zone is configured to stabilize at least one ion within the intermediate zone and / or enable at least one ion to be transmitted through at least a portion of the intermediate zone. In an exemplary embodiment, at least one action includes at least one of the following: (a) causing at least two ions within the ion trap to interact with each other, or (b) acting on at least one ion within the ion trap with a manipulation source. In an exemplary embodiment, the manipulation source is one of at least one laser beam or at least one microwave field. In an exemplary embodiment, at least one action zone is configured to have a quantum logic gate that is performed on an ion within at least one action zone. In an exemplary embodiment, at least one action zone includes three narrow matching groups of TT electrodes disposed between two wide matching groups of TT electrodes. In an exemplary embodiment, at least one action zone includes multiple narrow matching groups of TT electrodes, and the multiple narrow matching groups are configured to generate a potential that can be adjusted from a single well potential to multiple well potentials within at least one action zone. In an exemplary embodiment, at least one intermediate zone includes a narrow matching group of TT electrodes disposed between two wide matching groups of TT electrodes. In an exemplary embodiment, at least one action zone includes at least two action zones, and at least one intermediate zone is disposed between the at least two action zones. In an exemplary embodiment, the multiple zones include at least one storage zone. In an exemplary embodiment, at least one storage zone includes at least three narrow matching groups of TT electrodes disposed between two wide matching groups of TT electrodes.

[0006] In an exemplary embodiment, the ion trap device also includes a loading region configured to load ions into the ion trap. In an exemplary embodiment, (a) two or more RF rails are arranged between a first sequence and a third sequence of TT electrodes, (b) two or more RF rails form at least one longitudinal gap, and (c) a second sequence of TT electrodes is arranged in / along the longitudinal gap. In an exemplary embodiment, the two or more sequences of TT electrodes are configured to be operated so as to cause the ions in the ion trap to be transmitted along at least a portion of a confinement region, and the confinement region extends substantially parallel to the substantially parallel longitudinal axes of the two or more RF rails. In an exemplary embodiment, the ion trap device also includes a plurality of TT leads, each TT lead being electrically connected to only one TT electrode in the two or more sequences of TT electrodes. In an exemplary embodiment, the ion trap device also includes a plurality of TT electrode drivers or is electrically connected to a plurality of TT electrode drivers, each TT electrode driver being electrically connected to a TT electrode via a corresponding TT lead. In an exemplary embodiment, each TT electrode in the two or more sequences of TT electrodes is operated independently. In an exemplary embodiment, each TT electrode in the plurality of sequences of TT electrodes is configured to be biased with a TT voltage in the range of approximately -20 volts to +20 volts. In an exemplary embodiment, the ion trap device is part of a trapped ion quantum computer.

[0007] In an exemplary embodiment, an ion trap device is provided. The ion trap device includes: two or more radio frequency (RF) rails formed with substantially parallel longitudinal axes; and two or more sequences of capture and / or transmission (TT) electrodes, wherein each sequence is formed to extend substantially parallel to the substantially parallel longitudinal axes of the RF rails. Two or more RF rails and two or more sequences of TT electrodes define an ion trap. The two or more sequences of TT electrodes are arranged into a plurality of zones. The plurality of zones include at least one action zone and at least one intermediate zone. At least one action zone is configured to perform an action on at least one ion within at least one action zone. At least one intermediate zone is configured to perform a variety of functions, including stabilizing at least one ion within the intermediate zone and enabling at least one ion to be transmitted through at least a portion of the intermediate zone.

[0008] In an exemplary embodiment, each zone includes two or more wide matching groups of TT electrodes and at least one narrow matching group of TT electrodes, wherein the wide TT electrodes in one matching group of TT electrodes are longer and / or wider than the narrow TT electrodes of at least one narrow matching group of TT electrodes in a direction substantially parallel to the substantially parallel longitudinal axes of the two or more RF rails. In an exemplary embodiment, each zone includes two wide matching groups of TT electrodes, and at least one narrow matching group of TT electrodes is disposed between the two wide matching groups of TT electrodes. In an exemplary embodiment, each wide TT electrode in the wide matching group of TT electrodes is at least approximately twice as wide as the narrow TT electrode of at least one narrow matching group of TT electrodes in a direction substantially parallel to the substantially parallel longitudinal axes of the RF rails. In an exemplary embodiment, at least one action includes at least one of the following: (a) causing at least two ions within the ion trap to interact, or (b) acting on at least one ion within the ion trap with a manipulation source. In an exemplary embodiment, the manipulation source is one of at least one laser beam or at least one microwave field. In an exemplary embodiment, at least one action zone is configured to have a quantum logic gate that is performed on the ions within the at least one action zone. In an exemplary embodiment, at least one action zone includes three narrow matching groups of TT electrodes disposed between two wide matching groups of TT electrodes. In an exemplary embodiment, at least one action zone includes multiple narrow matching groups of TT electrodes, and the multiple narrow matching groups are configured to generate a potential that can be adjusted from a single well potential to multiple well potentials within at least one action zone. In an exemplary embodiment, at least one intermediate zone includes a narrow matching group of TT electrodes disposed between two wide matching groups of TT electrodes. In an exemplary embodiment, at least one action zone includes at least two action zones, and at least one intermediate zone is disposed between the at least two action zones. In an exemplary embodiment, the multiple zones include at least one storage zone. In an exemplary embodiment, at least one storage zone includes at least three narrow matching groups of TT electrodes disposed between two wide matching groups of TT electrodes.

[0009] In an exemplary embodiment, the ion trap device also includes a loading region configured to load ions into the ion trap. In an exemplary embodiment, (a) two or more RF rails are arranged between a first sequence and a third sequence of TT electrodes, (b) two or more RF rails form at least one longitudinal gap, and (c) a second sequence of TT electrodes is arranged in / along the longitudinal gap. In an exemplary embodiment, the two or more sequences of TT electrodes are configured to be operated so as to cause the ions in the ion trap to be transmitted along at least a portion of a confinement region, and the confinement region extends substantially parallel to the substantially parallel longitudinal axes of the two or more RF rails. In an exemplary embodiment, the ion trap device also includes a plurality of TT leads, each TT lead being electrically connected to only one TT electrode in the two or more sequences of TT electrodes. In an exemplary embodiment, the ion trap device also includes a plurality of TT electrode drivers or is electrically connected to a plurality of TT electrode drivers, each TT electrode driver being electrically connected to a TT electrode via a corresponding TT lead. In an exemplary embodiment, each TT electrode in the two or more sequences of TT electrodes is operated independently. In an exemplary embodiment, each TT electrode in the plurality of sequences of TT electrodes is configured to be biased with a TT voltage in the range of approximately -20 volts to +20 volts. In an exemplary embodiment, the ion trap device is part of a trapped ion quantum computer. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Having thus generally described the invention, reference will now be made to the accompanying drawings, which are not necessarily drawn to scale, and in which:

[0011] Figure 1 Perspective views of surface ion trap devices and / or packages according to exemplary embodiments are provided.

[0012] Figure 2 A schematic diagram of a quantum computer including an ion trap device according to an exemplary embodiment is provided.

[0013] Figure 3 is a top view of a portion of an ion trap having an exemplary architecture according to an exemplary embodiment.

[0014] Figure 4 Shows Figure 3 A portion of the ion trap is shown.

[0015] Figure 5 is a top view of a portion of another ion trap having another exemplary architecture according to an exemplary embodiment.

[0016] Figure 6 A schematic diagram of an exemplary controller for a quantum computer including an ion trap device according to an exemplary embodiment is provided.

[0017] Figure 7 A schematic diagram of an exemplary computing entity of a quantum computer system that may be used in accordance with exemplary embodiments is provided. DETAILED DESCRIPTION

[0018] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which some but not all embodiments of the present invention are shown. In fact, the present invention can be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; on the contrary, these embodiments are provided so that the present disclosure meets applicable legal requirements. Unless otherwise indicated, the term "or" (also represented as " / ") is used herein in the sense of substitution and combination. The terms "exemplary" and "exemplary" are used for examples without indication of quality levels. Unless otherwise indicated, the terms "generally" and "approximately" refer to within engineering and / or manufacturing limits and / or within user measurement capabilities. Throughout the content, similar reference numerals refer to similar elements.

[0019] Exemplary ion trap apparatus

[0020] Figure 1 A perspective view is provided of an exemplary embodiment of an ion trap device and / or package 100. In various embodiments, ion trap device and / or package 100 includes an ion trap chip 108 having an ion trap 110 defined thereby and / or thereon. Figures 3 to 5At least a portion of some exemplary ion traps 110 are shown from a top view. In various embodiments, the ion trap 110 is a surface ion trap. In various embodiments, the ion trap device and / or package 100 includes an ion trap chip 108 having an ion trap 110 defined by and / or at least in part by a plurality of radio frequency (RF) rails 112 (e.g., 112A, 112B) thereon. In various embodiments, the ion trap device and / or package 100 includes an ion trap 110 defined at least in part by a plurality of sequences 114 (e.g., 114A, 114B, 114C) of TT electrodes. In an exemplary embodiment, the ion trap 110 is a surface Paul trap with symmetrical RF rails. In various embodiments, the upper surface of the ion trap 110 has a flattened topology. For example, the upper surface of each RF rail 112 in the plurality of RF rails 112 and the upper surface of each TT electrode 116 (e.g., 116A, 116B, 116C), 118 (e.g., 118A, 118B, 118C) in the plurality of sequences 114 of TT electrodes may be substantially coplanar. For example, in an exemplary embodiment, the thickness of the RF rail 112 and the TT electrodes 116, 118 (e.g., in the z-direction) is approximately equal. In an exemplary embodiment, the thickness of the RF rail 112 and / or the TT electrodes 116, 118 is in the range of approximately 0.1 μm-20 μm. For example, the thickness of the RF rail 112 and / or the TT electrodes 116, 118 is in the range of approximately 0.1 μm-20 μm. In an exemplary embodiment, the thickness of the first sequence of electrodes 114A and the third sequence of electrodes 114C is greater than the thickness of the RF rail 112 and the second sequence of electrodes 114B, which may be substantially the same thickness.

[0021] In various embodiments, the height of the RF rail 112 and / or the TT electrodes 116, 118 (e.g., in the x-direction) is in the range of about 40 μm to 500 μm. In an exemplary embodiment, the height of the RF rail 112 is approximately equal to the height of the first sequence 114A of electrodes, the second sequence 114B of electrodes, and the third sequence 114C of electrodes. In an exemplary embodiment, the height of the first sequence 114A of electrodes is approximately equal to the height of the third sequence 114C of electrodes. In an exemplary embodiment, the height of the second sequence 114B of electrodes may be less than the height of the first sequence 114A of electrodes and / or the third sequence 114C of electrodes. In an exemplary embodiment, the height of the RF rail 112 is approximately equal.

[0022] In various embodiments, the ion trap 110 is at least partially defined by a plurality of RF rails 112. The RF rails 112 are formed with substantially parallel longitudinal axes 111 (e.g., 111A, 111B) and have substantially coplanar upper surfaces. For example, the RF rails 112 are substantially parallel so that the distance between the RF rails 112 is approximately constant along the length of the RF rails 112 (e.g., the length of the RF rails is along the longitudinal axis 111 of the RF rails). For example, the upper surface of the RF rails 112 may be substantially flush with the upper surface of the ion trap device and / or the package 100. In an exemplary embodiment, the plurality of RF rails 112 include two RF rails 112 (e.g., 112A, 112B). In various embodiments, the ion trap 110 may include a plurality of RF rails 112. For example, the ion trap 110 can be a two-dimensional ion trap including a plurality of numbers (e.g., pairs and / or groups) of RF rails 112, wherein each number (e.g., pairs and / or groups) of RF rails 112 has substantially parallel longitudinal axes 111. In an exemplary embodiment, a first number of RF rails 112 have longitudinal axes 111 that are substantially parallel to each other, a second number of RF rails 112 have longitudinal axes 111 that are substantially parallel to each other, and the longitudinal axes of the first number of RF rails are substantially non-parallel (e.g., transverse) to the longitudinal axes of the second number of RF rails. Figure 1 Two RF rails 112 are shown, although other embodiments may include additional RF rails in various configurations. In various embodiments, the height of the RF rails (e.g., the dimension of the RF rails in the x-direction) and / or the thickness of the RF rails (e.g., the dimension of the RF rails in the z-direction) may vary as appropriate for a particular application. Figure 1 and Figures 3 to 5 As shown, as used herein, the x-axis corresponds to the lateral direction of the ion trap 110 (e.g., perpendicular / orthogonal to the longitudinal direction of the ion trap and in the plane of the surface ion trap 110), the y-axis corresponds to the longitudinal direction of the ion trap 110, and the z-axis corresponds to the vertical direction relative to the upper surface of the ion trap. For example, the longitudinal axes 111 of the plurality of RF rails 112 are substantially parallel to the y-axis.

[0023] like Figure 1 As shown, in various embodiments, a plurality of RF rails 112 may be fabricated above the upper surface of a substrate 130. In various embodiments, other materials (e.g., dielectrics, insulators, shields, etc.) may be formed between the substrate 130 and the components (e.g., RF rails 112, sequence 114 of TT electrodes) fabricated above the upper surface of the substrate 130. Figure 1As shown, each RF rail 112 may be formed with a substantially parallel longitudinal axis 111 (e.g., substantially parallel to the y-axis). As described in some embodiments (e.g., two-dimensional ion trap embodiments), the first set of RF rails 112 may be formed with substantially parallel axes (e.g., axes substantially parallel to the y-axis), and the second set of RF rails 112 may be formed with substantially parallel axes (e.g., axes substantially parallel to the x-axis) and the axes are substantially non-parallel (e.g., transverse) relative to the longitudinal axis of each RF rail in the first set of RF rails 112. In various embodiments, each RF rail 112 is formed with a substantially coplanar upper surface (e.g., defining a plane substantially parallel to the xy plane).

[0024] In various embodiments, two adjacent RF rails 112 may be separated (e.g., insulated) from each other by a longitudinal gap 105. For example, the longitudinal gap (in one or two dimensions) may define a confined channel or confined region of the ion trap 110, wherein one or more ions may be trapped at various locations within the trap. In various embodiments, the longitudinal gap 105 defined thereby may extend substantially parallel to the longitudinal axis 111 of the adjacent RF rails 112. For example, the longitudinal gap 105 may extend substantially parallel to the y-axis. In an exemplary embodiment, the longitudinal gap 105 may be at least partially filled with an insulating material (e.g., a dielectric material). In various embodiments, the dielectric material may be silicon dioxide (e.g., formed by thermal oxidation) and / or other dielectric and / or insulating materials. In various embodiments, the height of the longitudinal gap 105 (e.g., in the x-direction) is approximately between 40 μm and 500 μm. In various embodiments, one or more sequences 114 of TT electrodes (e.g., a second sequence 114B of TT electrodes) may be disposed and / or formed within the longitudinal gap 105.

[0025] In an exemplary embodiment, a lateral gap may exist between adjacent and / or neighboring electrodes 116, 118 of one or more sequences 114 of electrodes. In an exemplary embodiment, the lateral gap may be an empty space and / or at least partially filled with a dielectric material to prevent electrical communication between adjacent and / or neighboring electrodes. In an exemplary embodiment, the lateral gap between adjacent and / or neighboring electrodes may be in the range of approximately 1 μm-10 μm.

[0026] In an exemplary embodiment, there is a longitudinal gap between the sequence of TT electrodes 114 and the adjacent and / or neighboring RF rails 112. In an exemplary embodiment, the longitudinal gap may be at least partially filled with a dielectric material and / or an insulating material to prevent electrical communication between the TT electrodes 116, 118 in the sequence of electrodes 114 and the RF rails 112. In an exemplary embodiment, the longitudinal gap between adjacent and / or neighboring electrodes may be in the range of approximately 1 μm-10 μm.

[0027] In various embodiments, the RF rail 112 may be made of a conductive material (e.g., copper, silver, gold, etc.) or an alloy of two or more conductive materials selected to be suitable for conducting and / or transmitting appropriate signals. In various embodiments, the RF rail 112 may be made of, for example, copper having a cross-sectional thickness (in the z direction) of about 0.1 μm to 10 μm. In various embodiments, the RF rail 112 may be manufactured to have a cross-sectional height (in the x direction) in the range of about 50 μm to about 350 μm. In an exemplary embodiment, the cross-sectional area of ​​the RF rail (e.g., in the xz plane) is determined to be suitable for conducting a current (e.g., from about 0.01 A to about 10.0 A) oscillating at an RF frequency (e.g., from about 3 Hz to 0.3 GHz).

[0028] In various embodiments, the ion trap 110 can be at least partially defined by a plurality of sequences 114 of TT electrodes (e.g., a first sequence 114A of TT electrodes, a second sequence 114B of TT electrodes, a third sequence 114C of TT electrodes). Each sequence 114 of TT electrodes is formed to extend substantially parallel to a substantially parallel longitudinal axis 111 of the RF rail 112. For example, the plurality of sequences 114 of TT electrodes can extend substantially parallel to the y-axis, such as Figure 1 As shown. In various embodiments, the plurality of sequences 114 of TT electrodes include two, three, four, and / or another number of sequences 114 of TT electrodes. In an exemplary embodiment, the ion trap 110 includes a plurality of sequences 114 of TT electrodes. For example, the ion trap 110 may be a two-dimensional ion trap including a plurality of sequences 114 of TT electrodes, each of the plurality of sequences of TT electrodes extending substantially parallel to the substantially parallel longitudinal axes of the corresponding number of RF rails 112. In an exemplary embodiment, the first number of sequences 114 of TT electrodes extend substantially parallel to the substantially parallel longitudinal axes 111 of the first number of RF rails 112, the second number of sequences 114 of TT electrodes extend substantially parallel to the substantially parallel longitudinal axes 111 of the second number of RF rails 112, and the longitudinal axes of the first number of RF rails are substantially non-parallel (e.g., transverse) to the longitudinal axes of the second number of RF rails. In some embodiments, each of the TT electrodes 116, 118 in the plurality of sequences 114 of TT electrodes may be formed with a substantially coplanar upper surface that is substantially coplanar with the upper surface of the RF rail 112.

[0029] In an exemplary embodiment (e.g., Figures 3 to 5), a plurality of (e.g., a pair of) RF rails 112 may be formed between a first sequence 114A of TT electrodes and a third sequence 114C of TT electrodes, wherein a second sequence 114B of TT electrodes extends along a longitudinal channel 105 between the RF rails 112. For example, each sequence 114 of TT electrodes may extend in a direction substantially parallel to the longitudinal axis 111 of the RF rail (e.g., in the y direction). In various embodiments, the upper surface of the sequence 114 of TT electrodes is substantially coplanar with the upper surface of the RF rail 112. In other words, the RF rail 112 and the TT electrodes 116, 118 may be formed to have substantially the same thickness (e.g., in the z direction). In an exemplary embodiment, the thickness (z dimension) and / or height (x dimension) of the first sequence 114A of TT electrodes and the second sequence 114B of TT electrodes may be greater than the RF rail 112 and the third sequence 114C of TT electrodes, and the thickness and / or height of the RF rail and the third sequence of TT electrodes may be substantially the same.

[0030] In various embodiments, multiple sequences 114 of TT electrodes may be fabricated as a plurality of matching TT electrodes. Figures 3 to 5 As shown, the first sequence 114A of TT electrodes may include a first TT electrode (e.g., 116A, 118A), the second sequence 114B of TT electrodes may include a second TT electrode (e.g., 116B, 118B), and the third sequence 114C of TT electrodes may include a third TT electrode (e.g., 116C, 118C). The first TT electrodes 116A, 118A, the second TT electrodes 116B, 118B, and the third TT electrodes 116C, 118C may be a matching set of TT electrodes 140 (e.g., 140W, 140N, as shown in FIG. 1 ). Figure 4). For example, the first TT electrode 116A, the second TT electrode 116B, the third TT electrode 116C or the first TT electrode 118A, the second TT electrode 118B, the third TT electrode 118C may be collinear along a line substantially perpendicular to the substantially parallel longitudinal axes 111 of the corresponding RF rails 112. For example, the first TT electrode 116A, the second TT electrode 116B, the third TT electrode 116C or the first TT electrode 118A, the second TT electrode 118B, the third TT electrode 118C may be collinear along a line substantially parallel to the x-axis. For example, the widths of the first TT electrode 116A, the second TT electrode 116B, the third TT electrode 116C or the first TT electrode 118A, the second TT electrode 118B, the third TT electrode 118C (e.g., in the y-direction) may be the same and may be aligned (e.g., positioned at the same forward edge and / or backward edge) in the longitudinal direction of the ion trap 110 (e.g., in the y-direction). For example, the sequence 114 of TT electrodes includes a plurality of TT electrodes 116, 118 aligned in a longitudinal direction (e.g., y-axis) of the ion trap 110. A matching set of TT electrodes 140 includes a plurality of TT electrodes 116A, 116B, 116C or 118A, 118B, 118C aligned in a longitudinal direction transverse to and / or perpendicular to the ion trap 110. For example, a matching set of TT electrodes 140 includes a plurality of TT electrodes 116, 118 aligned in an x-direction.

[0031] In various embodiments, the ion trap 110 includes a plurality of wide TT electrodes 116 and a plurality of narrow TT electrodes 118. The wide TT electrodes 116 are longer and / or wider than the narrow TT electrodes 118 in a dimension substantially parallel to the longitudinal direction of the ion trap 110 (e.g., substantially parallel to the y-axis). In an exemplary embodiment, each wide TT electrode 116 of the ion trap 110 has approximately a first width W1 in a longitudinal direction substantially parallel to the ion trap 110 (e.g., the y-direction), and each narrow TT electrode 118 of the ion trap 110 has approximately a second width W2 in a longitudinal direction substantially parallel to the ion trap 110, wherein the first width W1 is longer and / or wider than the second width W2. In various embodiments, the first width W1 is approximately at least twice the second width W2. In an exemplary embodiment, the first width W1 is approximately two to approximately six times the second width W2. In an exemplary embodiment, the first width W1 is approximately three to approximately five times the second width W2. In various embodiments, ion trap 110 may include a TT electrode having a width (in a direction substantially parallel to the longitudinal direction of ion trap 110, also referred to as the y-direction) that is longer and / or wider than the first width, between the first width and the second width, or narrower than the second width, depending on the application. In an exemplary embodiment, first width W1 is in the range of approximately 100 μm to 300 μm. In an exemplary embodiment, second width W2 is in the range of approximately 25 μm to 150 μm.

[0032] In various embodiments, the sequence 114 of TT electrodes includes both wide TT electrodes 116 and narrow TT electrodes 118. In various embodiments, the matched set of TT electrodes consists of only wide TT electrodes 116 (e.g., wide matched set 140W of TT electrodes) or only narrow TT electrodes 118 (e.g., narrow matched set 140N of TT electrodes). For example, in an exemplary embodiment, the matched set 140 of TT electrodes does not include both wide TT electrodes 116 and narrow TT electrodes 118.

[0033] In various embodiments, the sequence 114 of TT electrodes is arranged and / or formed into a plurality of zones, such as Figure 3 and Figure 4As shown. For example, these zones may include an action zone, an intermediate zone, a storage zone, etc. Each zone may include two wide matching groups 140W of TT electrodes on the periphery of the zone and at least one narrow matching group 140N of TT electrodes disposed between the two wide TT electrodes. As described above, the wide TT electrode 116 is longer and / or wider than at least one narrow TT electrode 118 in a direction substantially parallel to the substantially parallel longitudinal axis 111 of the RF rail 112 (e.g., in the y direction). In various embodiments, each zone may optimize a specific function and / or set of functions that will occur in the zone. In various embodiments, these functions may include transmitting ions through at least a portion of the zone, stabilizing and / or storing ions in the zone, manipulating ions via a manipulation source (e.g., a laser beam, a microwave field, etc.), interacting, exchanging and / or separating two ions (e.g., dividing two ions in the same potential well into two different and / or separate potential wells), and / or other functions that may achieve the controlled evolution of the quantum state of one or more ions trapped in the ion trap 110. In various embodiments, the ion trap 110 may include one or more repeating patterns of zones.

[0034] In various embodiments, RF signals may be applied to RF rails 112 to generate electric and / or magnetic fields that are used to maintain ions trapped within ion trap 110 in directions transverse to the longitudinal direction (e.g., the x-direction and the z-direction) of ion trap 110. In various embodiments, TT voltages may be applied to TT electrodes 116, 118 to maintain and / or cause ions trapped in ion trap 110 to transport in the longitudinal direction (e.g., in the y-direction) of ion trap 110.

[0035] In various embodiments, the plurality of sequences 114 of TT electrodes may be biased in combination with TT voltages that facilitate a variable combination of electric and / or magnetic fields to trap at least one ion in a potential well above at least one of the upper surfaces of the sequence 114 of TT electrodes and / or the RF rail 112. For example, an electric and / or magnetic field generated at least in part by voltages applied to TT electrodes in the sequence 114 of TT electrodes may trap at least one ion in a potential well above the upper surface of the second sequence 114B of TT electrodes and / or the longitudinal gap 105.

[0036] At least one ion may be trapped at a variable position in ion trap 110 by: the electric and / or magnetic fields being controlled by one or more connected devices (e.g., Figure 230, etc.) via leads 122, 124. For example, depending on the positive or negative charge on the at least one ion, the TT voltage may be raised or lowered for the TT electrodes 116, 118 on either side of the particular TT electrode to promote transport of the at least one ion to the particular TT electrode and / or to form a potential well that resists further transport of the at least one ion.

[0037] Depending on factors such as the charge on at least one ion and / or the shape and / or magnitude of the combined electric and / or magnetic fields, at least one ion may be stabilized at a particular distance (e.g., about 20 μm to about 200 μm) above the upper surface of the ion trap 110 (e.g., the coplanar upper surfaces of the sequence of TT electrodes 114 and the RF rails 112). To further aid in controlling transport between variable positions and / or stabilizing at least one ion trapped at a particular position, in various embodiments, the ion trap 110 may be operated in a cryogenic chamber and / or vacuum chamber capable of cooling the ion trap to a temperature below 124 Kelvin (e.g., below 100 Kelvin, below 50 Kelvin, below 10 Kelvin, below 5 Kelvin, etc.).

[0038] like Figure 1 As shown, the ion trap device 100 may also include a plurality of TT leads, wire bonds, interconnects, etc. (referred to herein as TT leads 122). For example, the TT leads 122 may enable electrical communication between a TT voltage driver and / or a voltage source and a corresponding TT electrode. For example, a TT electrode may be biased with a TT voltage, which is generated and / or provided by a TT voltage driver and / or a voltage source via a corresponding TT lead 122. The ion trap device 100 may also include RF leads, wire bonds, interconnects, etc. (referred to herein as RF leads 124). For example, the RF leads 124 may enable electrical communication between an RF driver and / or a voltage source and an RF rail 112. For example, the RF rail 112 may be biased with a voltage, which alternates at an RF rate and is generated and / or provided by an RF driver and / or a voltage source via the RF leads 124.

[0039] In various embodiments, the ion trap 110 is designed and / or configured to minimize the number of input / outputs (I / Os) (e.g., the number of TT leads 122) and the number of electrodes 116, 118 of the ion trap 110, while allowing all transfer operations required for ion manipulation to be performed in accordance with the intended application (e.g., in an exemplary embodiment, operations for using ions within the ion trap 110 as qubits for a quantum computer). In various embodiments, the design of the electrodes 116, 118 maximizes the harmonics and quarter potential coefficients of the electric and / or magnetic fields generated by biasing the electrodes 116, 118, while satisfying other constraints of the intended application.

[0040] Exemplary quantum computer including an ion trap device

[0041] Figure 2 A schematic diagram of an exemplary quantum computer system 200 including an ion trap device and / or package 100 according to an exemplary embodiment is provided. In various embodiments, the quantum computer system 200 includes a computing entity 10 and a quantum computer 210. In various embodiments, the quantum computer 210 includes a controller 30, a cryostat and / or vacuum chamber 40 enclosing the ion trap device and / or package 100, and one or more manipulation sources 60. In an exemplary embodiment, the one or more manipulation sources 60 may include one or more lasers (e.g., optical lasers, microwave sources, etc.). In various embodiments, the one or more manipulation sources 60 are configured to manipulate and / or cause a controlled quantum state evolution of one or more ions within an ion trap 110 of the ion trap device and / or package 100. For example, in an exemplary embodiment, wherein the one or more manipulation sources 60 include one or more lasers, the laser may provide one or more laser beams to the ion trap 110 within the cryostat and / or vacuum chamber 40. In various embodiments, the quantum computer 210 includes one or more voltage sources 50. For example, the voltage source 50 may include a plurality of TT voltage drivers and / or voltage sources and / or at least one RF driver and / or voltage source. The voltage source 50 may be electrically coupled to corresponding TT electrodes 116, 118 and / or RF rails 112 of the ion trap device and / or package 100 via corresponding leads 122, 124.

[0042] In various embodiments, the computing entity 10 is configured to allow a user to provide input to the quantum computer 210 (e.g., via a user interface of the computing entity 10) and to receive, view, and / or receive output from the quantum computer 210. The computing entity 10 may communicate with a controller 30 of the quantum computer 210 via one or more wired or wireless networks 20 and / or via direct wired and / or wireless communications. In an exemplary embodiment, the computing entity 10 may convert, configure, format, and / or the like information / data, quantum computing algorithms, and / or the like into a computing language, executable instructions, command set, and / or the like that the controller 30 may understand and / or implement.

[0043] In various embodiments, controller 30 is configured to control voltage source 50, a cryogenic system and / or vacuum system that controls the temperature and pressure within cryogenic chamber and / or vacuum chamber 40, manipulation source 60, and / or other systems that control various environmental conditions (e.g., temperature, pressure, etc.) within cryogenic chamber and / or vacuum chamber 40 and / or are configured to manipulate and / or cause a controlled evolution of the quantum state of one or more ions within ion trap 110. In various embodiments, the ions trapped within ion trap 110 are used as qubits of quantum computer 210.

[0044] Exemplary ion trap architecture

[0045] Figure 3 An exemplary zone architecture 300 of an exemplary embodiment of an ion trap 110 is provided. Figure 3 As shown, the ion trap 110 includes a plurality (eg, a pair) of RF rails 112 (eg, 112A, 112B) formed with substantially parallel longitudinal axes 111 (eg, 111A, 111B). The RF rails 112 are formed with substantially coplanar upper surfaces. Figure 3 A top view of the ion trap 110 is shown so that the upper surface of the RF rail 112 and the sequence 114 of the TT electrodes are shown in the plane of the page. The exemplary architecture 300 of the ion trap 110 includes two action areas 330 (e.g., 330A, 330B) and three intermediate areas 320 (e.g., 320A, 320B, 320C). In various embodiments, the intermediate area 320 is adjacent to each action area 330. For example, the intermediate areas 320A and 320B are adjacent action areas 330A, and the intermediate areas 320B and 320C are adjacent action areas 330B. For example, each action area 330 is adjacent to the intermediate area 320 on either side so that each action area 330 is adjacent to two intermediate areas 320. In other words, when ions are transmitted out of the action area 330, the ions enter the intermediate area 320 before entering any other action area 330.

[0046] In various embodiments, the middle region 320 includes two wide matching groups 140W of TT electrodes (e.g., matching groups of TT electrodes including wide TT electrodes from each sequence of TT electrodes in a plurality of sequences of TT electrodes). For example, the middle region 320 may include two wide TT electrodes 116 from each sequence of TT electrodes (e.g., matching groups of wide TT electrodes 116A, 116B, 116C). Between the two wide matching groups 140W of TT electrodes is at least one narrow matching group 140N of TT electrodes (e.g., matching groups of TT electrodes including narrow TT electrodes from each sequence of TT electrodes in a plurality of sequences of TT electrodes). For example, the middle region may include at least one narrow TT electrode 118 from each sequence of TT electrodes (e.g., matching groups of narrow TT electrodes 118A, 118B, 118C). The at least one narrow matching group 140N of TT electrodes is disposed between the two wide matching groups 140W of TT electrodes in the middle region 320. In an exemplary embodiment, each intermediate region 320 is composed of two wide matching groups 140W of TT electrodes and one narrow matching group 140N of TT electrodes disposed and / or formed between the two wide matching groups 140W of TT electrodes. In an exemplary embodiment, the wide TT electrode 116 is approximately at least twice as wide as the narrow TT electrode 118 (e.g., in a dimension substantially parallel to the y-axis). For example, the wide TT electrode 116 may be in the range of approximately two times to approximately six times longer and / or wider than the narrow TT electrode 118. In an exemplary embodiment, the wide TT electrode 116 is in the range of approximately three times to approximately five times longer and / or wider than the narrow TT electrode 118. In various embodiments, the intermediate region 320 is configured for stabilizing and / or storing ions therein, separating at least one ion from a potential well having a plurality of ions therein into different potential wells, and for transporting ions therethrough. In various embodiments, the intermediate region 320 is configured and / or designed to accommodate storage and / or stabilization of one or more ions during various ion transport steps.

[0047] In various embodiments, the action area 330 includes two wide matching groups 140W of TT electrodes. For example, the action area 330 may include two wide TT electrodes 116 (e.g., 116A, 116B, 116C) from each sequence of TT electrodes. Between the two wide matching groups 140W of TT electrodes, at least one narrow matching group 140N of TT electrodes is disposed and / or formed. For example, the action area 330 may include at least one narrow TT electrode 118 (e.g., 118A, 118B, 118C) from each sequence of TT electrodes. At least one narrow matching group 140N of TT electrodes is disposed between the two wide matching groups 140W of TT electrodes of the action area 330. In an exemplary embodiment, each action area includes at least two narrow matching groups 140N of TT electrodes disposed between the two wide matching groups 140W of TT electrodes of the action area 330. In an exemplary embodiment, each action area 330 consists of two wide matching groups 140W of TT electrodes and three narrow matching groups 140N of TT electrodes disposed between the two wide matching groups 140W of TT electrodes. In an exemplary embodiment, the wide TT electrode 116 is approximately at least twice as wide as the narrow TT electrode 118. For example, the wide TT electrode 116 may be in a range of approximately two times to approximately six times longer and / or wider (e.g., in a dimension substantially parallel to the y-axis) than the narrow TT electrode 118. In an exemplary embodiment, the wide TT electrode 116 is in a range of approximately three times to approximately five times longer and / or wider than the narrow TT electrode 118. In various embodiments, the action region 330 is configured to act on one or more ions using a manipulation source, cause two or more ions to interact, separate at least one ion from a potential well having multiple ions therein into a different potential well (e.g., exchange and / or separate two or more ions), and transport ions therethrough. In various embodiments, the action region 330 is configured and / or designed to provide a predetermined laser and / or other manipulation source interaction region, wherein the laser beam and / or other manipulation source may interact with one or more ions trapped within the ion trap 110.

[0048] In various embodiments, the narrow TT electrode 118 of the middle region 320 has the same width (e.g., in a dimension substantially parallel to the y-axis) as the narrow TT electrode 118 of the active region 330. In an exemplary embodiment, the width (e.g., in a dimension substantially parallel to the y-axis) of the narrow TT electrode 118 of the middle region 320 is different from the width of the narrow TT electrode 118 of the active region 330. In various embodiments, the wide TT electrode 116 of the middle region 320 has the same width (e.g., in a dimension substantially parallel to the y-axis) as the wide TT electrode 116 of the active region 330. In an exemplary embodiment, the width (e.g., in a dimension substantially parallel to the y-axis) of the wide TT electrode 116 of the middle region 320 is different from the width of the wide TT electrode 116 of the active region 330. For example, in an exemplary embodiment, the width of the wide TT electrode of the active region 330 is longer and / or wider than the width of the wide TT electrode of the middle region 320. In an exemplary embodiment, the width of the wide TT electrode of the active region 330 is approximately 20 μm-40 μm longer and / or wider than the width of the wide TT electrode of the intermediate region 320 .

[0049] Another exemplary ion trap architecture

[0050] Figure 5 An exemplary zone architecture 500 of an exemplary embodiment of an ion trap 110 is provided. Figure 5 As shown, the ion trap 110 includes a plurality (eg, a pair) of RF rails 112 (eg, 112A, 112B) formed with substantially parallel longitudinal axes 111. The RF rails 112 are formed with substantially coplanar upper surfaces. Figure 5 A top view of the ion trap 110 is shown so that the upper surface of the RF rail 112 and the sequence of the TT electrodes 114 are shown in the plane of the page. The illustrated exemplary architecture 400 of the ion trap 110 includes four action areas 530 (e.g., 530A, 530B, 530C, 530D), six intermediate areas 520 (e.g., 520A, 520B, 520C, 520D, 520E, 520F), two storage areas 540 (e.g., 540A, 540B), and a loading area 550. Various embodiments may include more or fewer action areas 530, more or fewer storage areas 540, and a corresponding greater or lesser number of intermediate areas 520. For example, an exemplary embodiment includes five action areas 530, two storage areas 540, eight intermediate areas 520, and one loading area 550. Multiple numbers of action areas 530, storage areas 540, intermediate areas 520, and various arrangements thereof may be used in various embodiments, depending on the application.

[0051] In various embodiments, the intermediate region 520 is disposed between adjacent action regions 530, between an action region 530 and an adjacent storage region 540, and / or between a loading region 550 and an adjacent action region 530 and / or storage region 540. For example, the intermediate region 520B is disposed and / or formed between adjacent action regions 530A and 530B. For example, the intermediate region 520A is disposed and / or formed between a storage region 540A and an action region 530A. For example, the intermediate region 520F is disposed between a storage region 540B and a loading region 550. For example, the intermediate region 520 may be directly adjacent to each action region 530, storage region 540, and loading region 550. In other words, when ions are transported out of the action region 530, storage region 540, and / or loading region 550, the ions enter the intermediate region 520 before entering any other action region 530 and / or storage region 540.

[0052] In various embodiments, the middle region 520 includes two wide matching groups 140W of TT electrodes (e.g., matching groups of TT electrodes including wide TT electrodes from each sequence of TT electrodes in a plurality of sequences of TT electrodes). For example, the middle region 520 may include two wide TT electrodes 116 from each sequence 114 of TT electrodes (e.g., matching groups of wide TT electrodes 116A, 116B, 116C). Between the two wide matching groups 140W of TT electrodes is at least one narrow matching group 140N of TT electrodes (e.g., matching groups of TT electrodes including narrow TT electrodes from each sequence 114 of TT electrodes in a plurality of sequences 114A, 114B, 114C). For example, the middle region 520 may include at least one narrow TT electrode 118 from each sequence of TT electrodes (e.g., matching groups of narrow TT electrodes 118A, 118B, 118C). The at least one narrow matching group 140N of TT electrodes is disposed between the two wide matching groups 140W of TT electrodes in the middle region 520. In an exemplary embodiment, each intermediate region 520 is composed of two wide matching groups 140W of TT electrodes and one narrow matching group 140N of TT electrodes disposed and / or formed between the two wide matching groups 140W of TT electrodes. In an exemplary embodiment, the wide TT electrode 116 is approximately at least twice as wide as the narrow TT electrode 118 (e.g., in a dimension substantially parallel to the y-axis). For example, the wide TT electrode 116 may be in the range of approximately two times to approximately six times longer and / or wider than the narrow TT electrode 118. In an exemplary embodiment, the wide TT electrode 116 is in the range of approximately three times to approximately five times longer and / or wider than the narrow TT electrode 118. In various embodiments, the intermediate region 520 is configured for stabilizing and / or storing ions therein, separating at least one ion from a potential well having a plurality of ions therein into different potential wells, and for transporting ions therethrough. In various embodiments, the intermediate region 520 is configured and / or designed to accommodate the storage and / or stabilization of one or more ions during various ion transport steps.

[0053] In various embodiments, the action region 530 includes two wide matching groups 140W of TT electrodes. For example, the action region 530 may include two wide TT electrodes 116 (e.g., 116A, 116B, 116C) from each sequence of TT electrodes. Between the two wide matching groups 140W of TT electrodes, at least one narrow matching group 140N of TT electrodes is disposed and / or formed. For example, the action region 330 may include at least one narrow TT electrode 118 (e.g., 118A, 118B, 118C) from each sequence of TT electrodes. At least one narrow matching group 140N of TT electrodes is disposed between the two wide matching groups 140W of TT electrodes of the action region 530. In an exemplary embodiment, each action region 530 includes at least two narrow matching groups 140N of TT electrodes disposed between the two wide matching groups 140W of TT electrodes of the action region 530. In an exemplary embodiment, each action region 530 is composed of two wide matching groups 140W of TT electrodes and three narrow matching groups 140N of TT electrodes disposed between the two wide matching groups 140W of TT electrodes. In an exemplary embodiment, the wide TT electrode 116 is approximately at least twice as wide as the narrow TT electrode 118. For example, the wide TT electrode 116 may be in the range of approximately two times to approximately six times longer and / or wider (e.g., in a dimension substantially parallel to the y-axis) than the narrow TT electrode 118. In an exemplary embodiment, the wide TT electrode 116 is in the range of approximately three times to approximately five times longer and / or wider than the narrow TT electrode 118. In various embodiments, the action region 530 is configured to act on one or more ions using a manipulation source, cause two or more ions to interact, separate at least one ion from a potential well having a plurality of ions therein into a different potential well (e.g., exchange and / or separate two or more ions), and transport and / or trap ions therethrough. In various embodiments, action zone 530 is configured and / or designed to provide a predetermined laser and / or other manipulation source interaction region, wherein the laser beam and / or other manipulation source may interact with one or more ions trapped within ion trap 110 .

[0054] In various embodiments, the storage region 540 includes two wide matching groups 140W of TT electrodes (e.g., matching groups of TT electrodes including wide TT electrodes from each sequence of TT electrodes in a plurality of sequences of TT electrodes). For example, the storage region 540 may include two wide TT electrodes 116 from each sequence of TT electrodes (e.g., matching groups of wide TT electrodes 116A, 116B, 116C). Between the two wide matching groups 140W of TT electrodes are at least two narrow matching groups 140N of TT electrodes (e.g., matching groups of TT electrodes including narrow TT electrodes from each sequence 114 of TT electrodes in a plurality of sequences 114A, 114B, 114C of TT electrodes). For example, the storage region 540 may include at least two narrow TT electrodes 118 from each sequence of TT electrodes (e.g., matching groups of narrow TT electrodes 118A, 118B, 118C). The at least two narrow matching groups 140N of TT electrodes are disposed between the two wide matching groups 140W of TT electrodes of the storage region 540. In an exemplary embodiment, each storage region 540 is composed of two wide matching groups 140W of TT electrodes and at least three narrow matching groups 140N of TT electrodes disposed and / or formed between the two wide matching groups 140W of TT electrodes. For example, in the illustrated embodiment, the storage region 540 includes five narrow matching groups 140N of TT electrodes disposed and / or formed between the two wide matching groups 140W of TT electrodes of the storage region 540. In an exemplary embodiment, the wide TT electrode 116 is approximately at least twice as wide as the narrow TT electrode 118 (e.g., in a dimension substantially parallel to the y-axis). For example, the wide TT electrode 116 may be in a range of approximately two times to approximately six times longer and / or wider than the short TT electrode 118. In an exemplary embodiment, the wide TT electrode 116 is in a range of approximately three times to approximately five times longer and / or wider than the short TT electrode 118. In various embodiments, storage area 540 is configured for stabilizing and / or storing ions therein, exchanging and / or separating two ions (e.g., separating two ions in the same potential well into two different and / or separate potential wells), and for transporting ions at least partially therethrough. In various embodiments, storage area 540 is configured and / or designed to accommodate storage and / or stabilization of one or more ions during various ion transport steps. For example, ions trapped within ion trap 110 may be stored in storage area 540 while multiple actions are applied to other ions trapped within ion trap 110.

[0055] In various embodiments, the loading region 550 is configured to receive ions from an ion source so that the ions can be loaded into the ion trap 110. For example, the loading region 550 may include a loading aperture 555. The loading aperture is a through hole extending through the ion trap 110 and through the substrate 130 to allow the ion source to be disposed under the ion trap device and / or package 100 so that atoms from the ion source can travel through the loading aperture 555 into the loading region 550. Once the atoms enter the loading region 550 through the loading aperture 555, the atoms can be ionized and the resulting ions can be trapped due to the electric and / or magnetic fields and / or the corresponding potentials generated by the plurality of sequences 114 of TT electrodes and the plurality of RF rails 112. In an exemplary embodiment, atoms can enter the loading region 550 via the loading aperture 555 and interact with a manipulation source (e.g., a laser beam) that ionizes the atoms so that the resulting atoms are trapped within the ion trap 110. In various embodiments, the loading region 550 can be configured to receive ions (or atoms) through the loading aperture 555, stabilize the ions (e.g., ionized atoms) within the loading region 550, enable manipulation of the ions (e.g., to initialize the ions and / or ensure that the ions are in a known initial quantum state) via one or more manipulation sources, etc. The loading region 550 can also be configured to facilitate transport of ions out of the loading region 550 and into the immediately adjacent intermediate region 520.

[0056] In an exemplary embodiment, the loading region 550 may include one or more loading TT electrodes 150. For example, the loading region 550 may include at least one loading TT electrode 150 from each sequence 114 of TT electrodes in a plurality of sequences of TT electrodes. In various embodiments, the loading TT electrode 150 may include wide TT electrodes and / or short TT electrodes (e.g., 140W and / or 140N) in the matching group 140. In an exemplary embodiment, the loading TT electrode 150 includes at least one wide matching group 140W of TT electrodes. In an exemplary embodiment, the width of the loading TT electrode 150 may be different from the width of the wide TT electrode 116 and / or the narrow TT electrode 118. For example, the third width W3 of the loading TT electrode 150 may be different from the first width W1 corresponding to the wide TT electrode 116 and / or the second width W2 of the narrow TT electrode 118. In various embodiments, the third width W3 may be longer and / or wider than the first width W1, narrower than the second width W2, and / or in a range between the first width W1 and the second width W2.

[0057] In various embodiments, the narrow TT electrode 118 of the intermediate region 520 has the same width W2 (e.g., in a dimension substantially parallel to the y-axis) as the narrow TT electrode 118 of the active region 530 and / or the storage region 540. In an exemplary embodiment, the width of the narrow TT electrode 118 of the intermediate region 520 (e.g., in a dimension substantially parallel to the y-axis) is different from the width of the narrow TT electrode 118 of the active region 530 and / or the storage region 520. In various embodiments, the wide TT electrode 116 of the intermediate region 520 has the same width L1 (e.g., in a dimension substantially parallel to the y-axis) as the wide TT electrode 116 of the active region 530 and / or the storage region 540. In an exemplary embodiment, the width of the wide TT electrode 116 of the intermediate region 520 (e.g., in a dimension substantially parallel to the y-axis) is different from the width of the wide TT electrode 116 of the active region 530 and / or the storage region 540.

[0058] Technical advantages

[0059] Various embodiments provide technical solutions to the technical problems of providing an ion trap device (providing sufficient ion position control), realize various ion transport functions (e.g., transporting ions, separating two or more ions in one potential well into different potential wells, exchanging and / or separating two ions (e.g., dividing two ions in the same potential well into two different and / or separate potential wells), etc.), and enable manipulation of ions in the ion trap via a manipulation source. A novel zone architecture in combination with electrodes of different sizes realizes a predetermined manipulation source (e.g., a laser), an interaction region (e.g., an action region), and an ion storage region (e.g., an intermediate region, a storage region) to accommodate storage during various ion transport steps while minimizing the number of I / Os of the ion trap device and / or package 100 and the number of electrodes 116, 118 of the ion trap 110.

[0060] Exemplary Controller

[0061] In various embodiments, the ion trap device and / or package 100 is incorporated into a quantum computer 210. In various embodiments, the quantum computer 210 also includes a controller 30 configured to control various elements of the quantum computer 210. For example, the controller 30 can be configured to control a voltage source 50, a cryogenic system and / or a vacuum system that controls the temperature and pressure within the cryogenic chamber and / or vacuum chamber 40, a manipulation source 60, and / or other systems that control environmental conditions (e.g., temperature, humidity, pressure, etc.) within the cryogenic chamber and / or vacuum chamber 40 and / or are configured to manipulate and / or cause a controlled evolution of the quantum state of one or more ions within the ion trap 110.

[0062] like Figure 6As shown, in various embodiments, the controller 30 may include various controller elements, including a processing element 605, a memory 610, a driver controller element 615, a communication interface 620, an analog-to-digital converter element 625, etc. For example, the processing element 605 may include a programmable logic device (CPLD), a microprocessor, a co-processing entity, an application-specific instruction set processor (ASIP), an integrated circuit, an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), a programmable logic array (PLA), a hardware accelerator, other processing devices and / or circuits, and / or the like and / or controllers. The term circuit may refer to a complete hardware implementation or a combination of hardware and a computer program product. In an exemplary embodiment, the processing element 605 of the controller 30 includes a clock and / or communicates with a clock.

[0063] For example, memory 610 may include non-transitory memory, such as volatile and / or non-volatile memory storage devices, such as one or more of a hard disk, ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, etc. In various embodiments, memory 610 may store qubit records corresponding to qubits of a quantum computer (e.g., in a qubit record data memory, a qubit record database, a qubit record table, etc.), calibration tables, executable queues, computer program code (e.g., in one or more computer languages, a dedicated controller language, etc.), etc. In an exemplary embodiment, execution of at least a portion of the computer program code stored in the memory 610 (e.g., by the processing element 605) causes the controller 30 to perform one or more steps, operations, methods, processes, etc. described herein for tracking the phase of atomic objects within an atomic system and resulting in phase adjustment of one or more manipulation sources and / or signals generated therefrom.

[0064] In various embodiments, the driver controller element 615 may include one or more drivers and / or controller elements each configured to control one or more drivers. In various embodiments, the driver controller element 615 may include a driver and / or a driver controller. For example, the driver controller may be configured to cause one or more corresponding drivers to be operated according to executable instructions, commands, etc. scheduled and executed by the controller 30 (e.g., by the processing element 605). In various embodiments, the driver controller element 615 may enable the controller 30 to operate the manipulation source 60. In various embodiments, the driver may be a laser driver; a vacuum component driver; a driver for controlling the flow of current and / or voltage applied to TT, RF, and / or other electrodes for maintaining and / or controlling the ion trap 110 ion trap potential; a cryogenic system and / or vacuum system component driver; and the like. For example, the driver may control and / or include a TT and / or RF voltage driver and / or a voltage source that provides a voltage and / or electrical signal to the TT electrodes 116, 118 and / or the RF rail 112 via leads 122, 124. In various embodiments, the controller 30 includes means for transmitting and / or receiving signals from one or more optical receiver components, such as a camera, a MEMs camera, a CCD camera, a photodiode, a photomultiplier tube, etc. For example, the controller 30 may include one or more analog-to-digital converter elements 625 configured to receive signals from one or more optical receiver components, a calibration sensor, etc.

[0065] In various embodiments, the controller 30 may include a communication interface 620 for interacting and / or communicating with the computing entity 10. For example, the controller 30 may include a communication interface 620 for receiving executable instructions, command sets, etc. from the computing entity 10, and providing the output received from the quantum computer 210 (e.g., from the light collection system) and / or the results of processing the output to the computing entity 10. In various embodiments, the computing entity 10 and the controller 30 may communicate via a direct wired and / or wireless connection and / or one or more wired and / or wireless networks 20.

[0066] Exemplary Computing Entities

[0067] Figure 7 An illustrative schematic diagram of an exemplary computing entity 10 that can be used in conjunction with embodiments of the present invention is provided. In various embodiments, computing entity 10 is configured to allow a user to provide input to quantum computer 210 (e.g., via a user interface of computing entity 10) and to receive, display, analyze, etc. output from quantum computer 210.

[0068] like Figure 7As shown, the computing entity 10 may include an antenna 712, a transmitter 704 (e.g., a radio component), a receiver 706 (e.g., a radio component), and a processing element 708, which provides signals to the transmitter 704 and receives signals from the receiver 706, respectively. The signals provided to the transmitter 704 and received from the receiver 706, respectively, may include information / data signaling according to the air interface standard of the applicable wireless system to communicate with various entities, such as the controller 30, other computing entities 10, etc. In this regard, the computing entity 10 may be capable of operating with one or more air interface standards, communication protocols, modulation types, and access types. For example, the computing entity 10 may be configured to receive and / or provide communications using a wired data transmission protocol, such as fiber distributed data interface (FDDI), digital subscriber line (DSL), Ethernet, asynchronous transfer mode (ATM), frame relay, online data service interface data specification (DOCSIS), or any other wired transmission protocol. Similarly, the computing entity 10 may be configured to communicate via a wireless external communications network using any of a variety of protocols, such as General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 1X (1xRTT), Wideband Code Division Multiple Access (WCDMA), Global System for Mobile Communications (GSM), Enhanced Data Rates for GSM Evolution (EDGE), Time Division Synchronous Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Evolved Universal Terrestrial Radio Access Network (E-UTRAN), Evolution Data Optimized (EVDO), High Speed ​​Packet Access (HSPA), High Speed ​​Downlink Packet Access (HSDPA), IEEE802.11 (Wi-Fi), Wi-Fi Direct, 802.16 (WiMAX), Ultra Wideband (UWB), Infrared (IR) protocol, Near Field Communication (NFC) protocol, Wibree, Bluetooth protocol, wireless Universal Serial Bus (USB) protocol and / or any other wireless protocol. The computing entity 10 may use such protocols and standards to communicate using: Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), TLS / SSL / Secure HTTP, Internet Message Access Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Telnet, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Control Transmission Protocol (SCTP), Hypertext Markup Language (HTML), etc.

[0069] Via these communication standards and protocols, the computing entity 10 may communicate with various other entities using concepts such as Unstructured Supplementary Service Message / Data (USSD), Short Message Service (SMS), Multimedia Message Service (MMS), Dual Tone Multi-Frequency Signaling (DTMF), and / or Subscriber Identity Module Dial Pad (SIM Dial Pad). The computing entity 10 may also download changes, additional plug-ins, and updates, e.g., to its firmware, software (e.g., including executable instructions, applications, program modules), and operating system.

[0070] The computing entity 10 may also include a user interface device including one or more user input / output interfaces (e.g., a display 716 and / or a speaker / speaker driver coupled to the processing element 708 and a touch screen, keyboard, mouse, and / or microphone coupled to the processing element 708). For example, the user output interface may be configured to provide an application, browser, user interface, interface, dashboard, screen, web page, page, and / or similar words used herein that are interchangeably executed on the computing entity 10 and / or accessible via the computing entity to cause the display or auditory presentation of information / data and to interact with it via one or more user input interfaces. The user input interface may include any of a plurality of devices that allow the computing entity 10 to receive data, such as a keypad 718 (hard or soft), a touch display, a sound / voice or motion interface, a scanner, a reader, or other input device. In an embodiment including a keypad 718, the keypad 718 may include (or cause to be displayed) conventional numeric keys (0-9) and related keys (#, *) and other keys for operating the computing entity 10, and may include a complete set of alphabetic keys or a set of keys that may be enabled to provide a complete set of alphanumeric keys. In addition to providing input, the user input interface can also be used to, for example, activate or deactivate certain functions, such as screen savers and / or sleep modes. Through such input, computing entity 10 can collect information / data, user interactions / inputs, etc.

[0071] The computing entity 10 may also include an embedded and / or removable volatile storage device or memory 722 and / or a non-volatile storage device or memory 724. For example, the non-volatile memory may be ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, etc. The volatile memory may be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, etc. The volatile and non-volatile storage devices or memories may store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, byte code, compiled code, interpreted code, machine code, executable instructions, etc. to implement the functions of the computing entity 10.

[0072] in conclusion

[0073] Those skilled in the art to which the present invention belongs, having the benefit of the teachings presented in the foregoing description and the associated drawings, will recognize many modifications and other embodiments of the present invention set forth herein. Therefore, it should be understood that the present invention is not limited to the specific embodiments disclosed, and modifications and other embodiments are intended to be included within the scope of the appended claims. Although specific terms are employed herein, they are used in a general and descriptive sense only and not for the purpose of limitation.

Claims

1. An ion trap device, comprising: two or more radio frequency (RF) rails, the two or more RF rails being formed with substantially parallel longitudinal axes and having substantially coplanar upper surfaces; as well as Two or more sequences of capture and / or transmission TT electrodes, wherein each sequence is formed to extend substantially parallel to the substantially parallel longitudinal axes of the RF guides, the two or more RF guides and the two or more sequences of TT electrodes define an ion trap, wherein the two or more sequences of TT electrodes are arranged into a plurality of zones, each zone comprising a wide matching group of TT electrodes and at least one narrow matching group of TT electrodes disposed between the wide matching groups of TT electrodes in the zone, wherein a wide TT electrode of one of the wide matching groups of TT electrodes is wider than a narrow TT electrode of the at least one narrow matching group of TT electrodes in a direction substantially parallel to the substantially parallel longitudinal axes of the two or more RF guides.

2. An ion trap device according to claim 1, wherein (a) the multiple zones include at least one action zone and at least one intermediate zone, (b) the at least one action zone is configured to perform an action on at least one ion within the at least one action zone, and (c) the at least one intermediate zone is configured to stabilize the at least one ion within the intermediate zone during a transmission operation of the at least one ion.

3. An ion trap device according to claim 2, wherein the at least one action region includes at least one of the following items: (a) causing at least two ions in the ion trap to interact with each other, or (b) using a manipulation source to act on at least one ion in the ion trap. 4 . The ion trap apparatus of claim 2 , wherein the at least one action region is configured to have a quantum logic gate that is performed on ions within the at least one action region.

5. An ion trap device according to claim 2, wherein the at least one action region includes multiple narrow matching groups of TT electrodes, and the multiple narrow matching groups are configured to generate an electric potential, which can be adjusted from a single well potential to multiple well potentials within the at least one action region.

6. The ion trap apparatus of claim 2, wherein the at least one intermediate region comprises a narrow matching set of TT electrodes disposed between two wide matching sets of TT electrodes. 7 . The ion trap device according to claim 2 , wherein the at least one action region comprises at least two action regions, and the at least one intermediate region is disposed between the at least two action regions.

8. The ion trap apparatus of claim 2, wherein the plurality of regions comprises at least one storage region comprising at least three matching groups of TT electrodes.

9. An ion trap device according to claim 1, wherein (a) the two or more RF guides are arranged between a first sequence and a third sequence of TT electrodes, (b) the two or more RF guides form at least one longitudinal gap, and (c) the second sequence of TT electrodes is arranged within the longitudinal gap.

10. An ion trap device according to claim 1, wherein the two or more sequences of TT electrodes are configured to be operated so as to cause ions within the ion trap to be transmitted along at least a portion of a confinement region, the confinement region extending substantially parallel to the substantially parallel longitudinal axes of the two or more RF guides and each TT electrode in the two or more sequences of TT electrodes is operated independently.

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