Light-emitting components

Abstract

The present invention provides a light-emitting element, comprising: a substrate having a first surface and a second surface facing the first surface; a plurality of light-emitting portions arranged on the first surface of the substrate; and a light-blocking film arranged on the second surface of the substrate and exposing at least a portion of a light-emitting region where each of the light-emitting portions is arranged, wherein the light-blocking film has a thickness greater than the length of the longest wavelength among the wavelengths of light emitted from the light-emitting portions.

Description

Technical Field

[0001] The present invention relates to a light-emitting element, and more particularly to a light-emitting element comprising a plurality of light-emitting parts. Background Art

[0002] As an inorganic light source, light emitting diodes are being used in a variety of fields such as display devices, vehicle lamps, and general lighting. Light emitting diodes have the advantages of long life, low power consumption, and fast response speed, and are rapidly replacing existing light sources.

[0003] In particular, display devices generally use a mixture of blue, green and red to achieve multiple colors. Each pixel of the display device is equipped with blue, green and red sub-pixels, the color of a specific pixel is determined by the colors of these sub-pixels, and an image is presented by the combination of these pixels.

[0004] Light emitting diodes are mainly used as backlight sources in display devices. However, micro LEDs (micro LEDs) are being developed as next-generation displays that directly display images using light emitting diodes. Summary of the invention

[0005] The technical problem to be solved by the present invention is to provide a light-emitting element that suppresses color mixing and improves color reproducibility.

[0006] The technical problems to be solved by the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned can be clearly understood by those skilled in the art through the following description.

[0007] In order to solve the technical problem to be solved, a light-emitting element according to an embodiment of the present invention includes: a substrate having a first surface and a second surface opposite to the first surface; a plurality of light-emitting portions arranged on the first surface of the substrate; and a light-blocking film arranged on the second surface of the substrate and exposing at least a portion of a light-emitting area where each of the light-emitting portions is arranged, wherein the light-blocking film has a thickness greater than the length of the longest wavelength among the wavelengths of light emitted from the light-emitting portions.

[0008] According to an embodiment, the light blocking film may cover respective ends of the light emitting regions to define a light extraction surface.

[0009] According to an embodiment, a width of the light extraction surface may be smaller than a thickness of the light blocking film.

[0010] According to an embodiment, a sidewall of the light blocking film may have a concavo-convex surface.

[0011] According to an embodiment, the light blocking film may have a first surface facing the second surface of the substrate and a second surface facing the first surface of the light blocking film, and the second surface of the light blocking film may have a concave surface.

[0012] According to an embodiment, the light blocking film may have a vertical sidewall.

[0013] According to an embodiment, the light blocking film may have an inclined sidewall.

[0014] According to an embodiment, the light blocking film may have a first surface facing the second surface of the substrate and a second surface facing the first surface of the light blocking film, and the light blocking film may have a width gradually increasing from the first surface of the light blocking film toward the second surface of the light blocking film.

[0015] Details of other embodiments are included in the detailed description and drawings.

[0016] According to the light-emitting element of the embodiment of the present invention, the light-blocking film is used to define a light extraction surface that is smaller than the light-emitting area, thereby improving the light-dark ratio (constrast) of the light-emitting element. In addition, the sufficiently thick light-blocking film is used to eliminate the diffraction of light emitted through the narrow light extraction surface, thereby preventing the image of the display device using the light-emitting element from being blurred. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1a as well as Figure 1b FIG. 1 is a plan view for explaining a light emitting element according to an embodiment of the present invention.

[0018] Figure 2a to Figure 2d Yes Figure 1a as well as Figure 1b The light emitting element is shown in a cross-sectional view taken along line AA'.

[0019] Figure 3a It is used to illustrate Figure 1a A plan view of the light-emitting structure of the light-emitting element shown.

[0020] Figure 3b Yes Figure 3a Cross-sectional view of the light emitting element cut along lines AA' and BB'.

[0021] Figures 4 to 8 It is a cross-sectional view for explaining a method for manufacturing a light emitting element according to an embodiment of the present invention. DETAILED DESCRIPTION

[0022] In order to fully understand the configuration and effects of the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be implemented in various forms and can be variously modified.

[0023] And, the terms used in the embodiments of the present invention may be construed as meanings generally known to a person having ordinary knowledge in the corresponding technical field unless otherwise defined.

[0024] Hereinafter, a light emitting element according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0025] Figure 1a as well as Figure 1b FIG. 1 is a plan view for explaining a light emitting element according to an embodiment of the present invention. Figure 2a to Figure 2d Yes Figure 1a as well as Figure 1b The light emitting element is shown in a cross-sectional view taken along line AA'. Figure 3a It is used to illustrate Figure 1a A plan view of the light emitting structure of the light emitting element shown, Figure 3b Yes Figure 3a Cross-sectional view of the light emitting element cut along lines AA' and BB'.

[0026] Figure 1a is a plan view viewed from the pad of the light emitting element, Figure 1b This is a plan view viewed from the light extraction surface of the light emitting element. Figure 3a This is a plan view viewed from the pad of the light emitting element.

[0027] Reference Figure 1a , Figure 1b , Figure 2a , Figure 2b , Figure 2c as well as Figure 2d The light emitting element may include: a substrate 100 having a first surface SF1_S and a second surface SF2_S opposite to the first surface SF1_S; a plurality of light emitting portions LE1, LE2, LE3 arranged on the first surface SF1_S of the substrate 100; and a light blocking film LS arranged on the second surface SF2_S of the substrate 100.

[0028] The substrate 100 is a substrate 100 capable of growing a gallium nitride-based semiconductor layer, and may include sapphire (Al2O3), silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), gallium oxide (Ga2O3) or silicon. In addition, the substrate 100 may be a patterned sapphire substrate. According to one embodiment, the substrate 100 may include a substance that allows visible light to pass through.

[0029] according to Figure 3a as well as Figure 3b In one embodiment shown, the light emitting element may include a light emitting structure LED in which a first light emitting portion LE1, a second light emitting portion LE2, and a third light emitting portion LE3 are vertically stacked. The substrate 100 may include a light emitting area LEA where each light emitting structure LED is arranged and a peripheral area PPA other than the light emitting area LEA. As an example, in the case where each light emitting structure LED has a width that gradually increases from the third light emitting portion LE3 toward the first light emitting portion LE1, the light emitting area LEA may have a first width W1 that is the same as the maximum width of the light emitting structure LED.

[0030] In the case where the second surface SF2_S of the substrate 100 has a light extraction surface LEX, the wavelength of the light emitted from the first light-emitting portion LE1 may be the shortest, the wavelength of the light emitted from the second light-emitting portion LE2 may be longer than the wavelength of the light emitted from the first light-emitting portion LE1, and shorter than the wavelength of the light emitted from the third light-emitting portion LE3, and the wavelength of the light emitted from the third light-emitting portion may be the longest. For example, the first light-emitting portion LE1 may emit blue light, the second light-emitting portion LE2 may emit green light, and the third light-emitting portion LE3 may emit red light. In this case, the light emitted from the first light-emitting portion LE1 may have a wavelength of 450 to 495 nm, the light emitted from the second light-emitting portion LE2 may have a wavelength of 495 to 570 nm, and the light emitted from the third light-emitting portion LE3 may have a wavelength of 620 to 750 nm. However, the present disclosure is not limited thereto. For example, the second light-emitting portion LE2 may emit light of a shorter wavelength than the first light-emitting portion LE1.

[0031] The first light emitting portion LE1 may include a first n-type semiconductor layer 102, a first active layer 104, a first p-type semiconductor layer 106 and a first ohmic layer 108, the second light emitting portion LE2 may include a second n-type semiconductor layer 202, a second active layer 204, a second p-type semiconductor layer 206 and a second ohmic layer 208, and the third light emitting portion LE3 may include a third n-type semiconductor layer 302, a third active layer 304, a third p-type semiconductor layer 306 and a third ohmic layer 308.

[0032] Each of the first n-type semiconductor layer 102, the second n-type semiconductor layer 202, and the third n-type semiconductor layer 302 may be a gallium nitride-based semiconductor layer doped with Si. Each of the first p-type semiconductor layer 106, the second p-type semiconductor layer 206, and the third p-type semiconductor layer 306 may be a gallium nitride-based semiconductor layer doped with Mg. Each of the first active layer 104, the second active layer 204, and the third active layer 304 may include a multi-quantum well structure (MQW: Multi Quantum Well), and its composition ratio may be determined to be able to emit light of a desired peak wavelength. Each of the first ohmic layer 108, the second ohmic layer 208, and the third ohmic layer 308 may use a transparent oxide layer (TCO: Transparent Conductive Oxide) such as tin oxide (SnO), indium oxide (InO2), zinc oxide (ZnO), indium tin oxide (ITO), and indium tin zinc oxide (ITZO).

[0033] The first light emitting portion LE1 may be arranged to be separated from the second light emitting portion LE2. As an example, the first ohmic layer 108 of the first light emitting portion LE1 may face the second ohmic layer 208 of the second light emitting portion LE2. As another example, the first ohmic layer 108 of the first light emitting portion LE1 may face the second n-type semiconductor layer 202 of the second light emitting portion LE2.

[0034] The second light emitting portion LE2 may be arranged to be separated from the third light emitting portion LE3. As an example, the second n-type semiconductor layer 202 of the second light emitting portion LE2 may face the third ohmic layer 308 of the third light emitting portion LE3. As another example, the second ohmic layer 208 of the second light emitting portion LE2 may face the third n-type semiconductor layer 302 of the third light emitting portion LE3.

[0035] The light emitting element may further include: a first bonding portion AD1, which bonds the first light emitting portion LE1 and the second light emitting portion LE2 between the first light emitting portion LE1 and the second light emitting portion LE2 separated from each other; and a second bonding portion AD2, which bonds the second light emitting portion LE2 and the third light emitting portion LE3 between the second light emitting portion LE2 and the third light emitting portion LE3 separated from each other. The first bonding portion AD1 and the second bonding portion AD respectively include a substance that allows visible light to pass through and has insulating properties. The first bonding portion AD1 and the second bonding portion AD2 may each include a polymer, a resist, or a polyimide. For example, the first bonding portion AD1 and the second bonding portion AD2 may respectively include spin-on glass (SOG: SpinOn Glass), benzocyclobutene (BCB: benzocyclobutene), hydrogen silsesquioxane (HSQ: hydrogensilsesquioxane), or SU-8 photoresist.

[0036] The light emitting element LED may further include a first color filter CF1 disposed between the first light emitting portion LE1 and the second light emitting portion LE2, and a second color filter CF2 disposed between the second light emitting portion LE2 and the third light emitting portion LE3. The first color filter CF1 may be disposed on the first ohmic layer 108 of the first light emitting portion LE1 or the second ohmic layer 208 of the second light emitting portion LE2. The second color filter CF2 may be disposed on the second n-type semiconductor layer 202 of the second light emitting portion LE2 or the third ohmic layer 308 of the third light emitting portion LE3. The first color filter CF1 may reflect light emitted from the first light emitting portion LE1 and pass light emitted from each of the second light emitting portion LE2 and the third light emitting portion LE3, so that the light emitted from the first light emitting portion LE1 does not image each of the second light emitting portion LE2 and the third light emitting portion LE3. The second color filter CF2 can reflect the light emitted from each of the first light-emitting portion LE1 and the second light-emitting portion LE2, so that the light emitted from each of the first light-emitting portion LE1 and the second light-emitting portion LE2 does not affect the third light-emitting portion LE3, and can allow the light emitted from the third light-emitting portion LE3 to pass. The first color filter CF1 and the second color filter CF2 can respectively include a distributed Bragg reflector (DBR: Distributed Bragg Reflector) having a structure in which TiO2 and SiO2 are alternately stacked. The order and number of alternations of TiO2 and SiO2 of the first color filter CF1 can be different from the order and number of alternations of TiO2 and SiO2 of the second color filter CF2. According to one embodiment, the first color filter CF1 and the second color filter CF2 can be selectively omitted.

[0037] The light-emitting element may also include: a first via pattern VA1, which passes through the third light-emitting portion LE3, the second color filter CF2, the second adhesive portion AD2, the second light-emitting portion LE2, the first adhesive portion AD1 and the first color filter CF1 and is electrically in contact with the first ohmic layer 108; a second via pattern VA2, which passes through the third light-emitting portion LE3, the second color filter CF2, the second adhesive portion AD2, the second n-type semiconductor layer 202, the second active layer 204 and the second p-type semiconductor layer 206 and is electrically in contact with the second ohmic layer; and a third via pattern VA3, which passes through the third n-type semiconductor layer 302, the third active layer 304 and the third p-type semiconductor layer 306 and is electrically in contact with the third ohmic layer 308. In addition, the light-emitting element may also include: a fourth via pattern VA4, which passes through the third light-emitting portion LE3, the second color filter CF2, the second adhesive portion AD2, the second light-emitting portion LE2, the first adhesive portion AD1, the first color filter CF1, the first ohmic layer 108, the first p-type semiconductor layer 106 and the first active layer 104 and is electrically in contact with the first n-type semiconductor layer 102; a fifth via pattern VA5, which passes through the third light-emitting portion LE3, the second color filter CF2, the second adhesive portion AD2 and is electrically in contact with the second n-type semiconductor layer 202; and a sixth via pattern VA6, which is electrically in contact with the third n-type semiconductor layer 302.

[0038] The light emitting element may further include: a first pad PD1 electrically connected to the first ohmic layer 108 through a first via pattern VA1; a second pad PD2 electrically connected to the second ohmic layer 208 through a second via pattern VA2; a third pad PD3 electrically connected to the third ohmic layer 308 through a third via pattern VA3; and a common pad CPD electrically connected to the first n-type semiconductor layer 102, the second n-type semiconductor layer 202, and the third n-type semiconductor layer 302. According to an embodiment, the first pad PD1, the second pad PD2, the third pad PD3, and the common pad CPD may be arranged on the third light emitting portion LE3, respectively.

[0039] In this embodiment, the common pad CPD is exemplarily connected to the first n-type semiconductor layer 102 , the second n-type semiconductor layer 202 and the third n-type semiconductor layer 302 . However, the common pad CPD may be connected to the first ohmic layer 108 , the second ohmic layer 208 and the third ohmic layer 308 .

[0040] The light emitting element may further include an outer sidewall surrounding each of the first via pattern VA1, the second via pattern VA2, the third via pattern VA3, the fourth via pattern VA4, the fifth via pattern VA and the sixth via pattern VA6 and extending to the upper portion of the third light emitting portion LE3.

[0041] In this embodiment, the light-emitting parts LE1, LE2, and LE3 are exemplarily described as comprising a first light-emitting part LE1, a second light-emitting part LE2, and a third light-emitting part LE3 stacked vertically, and a light-emitting element comprising via hole patterns VA1, VA2, VA3, VA4, VA5, and VA6 penetrating the first light-emitting part LE1, the second light-emitting part LE2, and the third light-emitting part LE3, but the light-emitting element may have a mesa structure in which the first n-type semiconductor layer 102, the second n-type semiconductor layer 202, the third n-type semiconductor layer 302, the first ohmic layer 108, the second ohmic layer 208, and the third ohmic layer 308 are exposed by etching the first light-emitting part LE1, the second light-emitting part LE2, and the third light-emitting part LE3 stacked vertically. In addition, the light-emitting element may have a structure in which the first light-emitting part LE1, the second light-emitting part LE2, and the third light-emitting part LE3 are horizontally arranged on the same plane.

[0042] Reference Figure 1a , Figure 1b , Figure 2a , Figure 2b , Figure 2c as well as Figure 2d The light blocking film LS may include a plurality of holes HL exposing at least a portion of each of the light emitting areas LEA at the second surface SF2_S of the substrate 100. The holes HL of the light blocking film LS may each define a light extraction surface LEX, and light emitted from each light extraction surface LEX may be emitted through the holes HL exposing the light extraction surface LEX. That is, the holes HL may function as a light extraction path.

[0043] According to an embodiment, each light extraction surface may have a second width W2 within the light emitting area LEA that is smaller than the first width W1 of the light emitting area LEA. Also, the center of the light extraction surface LEX may be the same as the center of the light emitting area LEA.

[0044] The light blocking film LS may include a metal such as Ti, Ni, Al, Ag, or Cr, or may include a substance such as a photoresist, epoxy, polydimethylsiloxane (PDMS), and a black matrix.

[0045] According to one embodiment, the thickness TH of the light-blocking film LS may be greater than or equal to the length of the longest wavelength of the light emitted by the light-emitting units LE1, LE2, and LE3. As an example, when the first light-emitting unit LE1 emits blue light with a wavelength of 450 to 490 nm, the second light-emitting unit LE2 emits green light with a wavelength of 495 to 570 nm, and the third light-emitting unit LE3 emits red light with a wavelength of 620 to 750 nm, the thickness TH of the light-blocking film LS may be greater than or equal to the wavelength of the light emitted from the third light-emitting unit LE3.

[0046] According to an embodiment, the second width W2 of the light extraction surface LEX defined by the light blocking film LS may be smaller than the thickness TH of the light blocking film LS. For example, when the distance DT between the center of one light emitting structure LED and the center of another light emitting structure LED is 80 μm, the second width W2 may be 5 μm.

[0047] The light blocking film LS is used to define a light extraction surface LEX that is smaller than the light emitting area LEA, so that the contrast of the light emitting element is improved, thereby improving the color reproducibility of the light emitting element.

[0048] However, as the width of the light extraction surface LEX decreases, the light passing through the light blocking film LS is diffused due to diffraction, and accordingly, the image formed by the light emitted from the light emitting element may appear blurred. Therefore, the thickness TH of the light blocking film LS is formed to be greater than the longer wavelength among the wavelengths of the light emitted from the light emitting portions LE1, LE2, and LE3, so that the diffraction of the light can be eliminated during the period of passing through the light blocking film LS to reduce the blur of the image.

[0049] according to Figure 2a In the illustrated embodiment, the sidewall SW exposed by the hole HL of the light blocking film LS may be vertical. Also, the light blocking film LS may have a predetermined thickness TH.

[0050] For convenience of description, the light emitting structure LED may include a first light emitting structure LED1 and a second light emitting structure LED2, and the hole HL may include a first hole HL1 and a second hole HL2. The first light emitting structure LED1 may emit light through the first hole HL1, and the second light emitting structure LED2 may emit light through the second hole HL2.

[0051] The light emitted from the first light emitting structure LED1 should be emitted through the first hole HL1, but may be reflected and irradiated to the adjacent second hole HL2 using the substrate 100 as a light guide path. The light emitted from the first light emitting structure LED1 reflected and irradiated to the second hole HL2 has its intensity weakened due to the disappearance of part of the light during the period of passing through the substrate 100, and may disappear during the period of passing through the second hole HL2 and the thick light blocking film LS. In addition, when the light emitted from the first light emitting structure LED1 is emitted through the first hole HL1, the diffraction phenomenon can also be eliminated during the period of passing through the thick light blocking film LS.

[0052] according to Figure 2b In the illustrated embodiment, the sidewall SW exposed by the hole HL of the light blocking film LS may be vertical, and the sidewall SW of the light blocking film LS may have a concavo-convex surface RGH. The concavo-convex surface RGH may include a plurality of concavo-convex portions CC.

[0053] As described above, although the light emitted from the first light emitting structure LED1 is eliminated by the thicker light blocking film LS while passing through the second hole HL2, since the side wall SW of the second hole HL2 is formed by the concave-convex surface RGH, the light emitted from the first light emitting structure LED1 is diffusely reflected and scattered on the concave-convex surface RGH, thereby being eliminated more quickly and completely.

[0054] according to Figure 2c In another embodiment shown, the sidewall exposed by the hole HL of the light-blocking film LS may have an inclination. As an example, the light-blocking film LS includes a first surface SF1_LS facing the second surface SF2_S of the substrate 100 and a second surface SF2_LS opposite to the first surface SF1_LS, and the light-blocking film LS may have a width that gradually decreases from the second surface SF2_LS of the light-blocking film LS toward the first surface SF1_LS. That is, the sidewall SW of the light-blocking film LS may have a reverse slope. The area of ​​the sidewall SW having the reverse slope may be larger than the area of ​​the vertical sidewall SW.

[0055] As described above, the light emitted from the first light emitting structure LED1 disappears due to the thicker light blocking film LS during the period of passing through the second hole HL2, and since the side wall SW of the second hole HL2 has a reverse slope, the light irradiated from multiple angles can be effectively reflected and absorbed, thereby making the light disappear more effectively.

[0056] according to Figure 2dIn the embodiment shown, the light-blocking film LS includes a first surface SF1_LS facing the second surface SF2_S of the substrate 100 and a second surface SF2_LS opposite to the first surface SF1_LS, and the second surface SF2_LS of the light-blocking film LS may have a concave surface CVS. That is, it may have a thickness TH that gradually decreases from the end of the second surface of the light-blocking film LS toward the center. As an example, the end of the light-blocking film LS may have a first thickness TH1, and the center of the light-blocking film LS may have a second thickness TH2 that is smaller than the first thickness TH1. In this way, the thickness TH1 of the end of the light-blocking film LS is maintained thicker, that is, the thickness TH1 of the portion exposed by the hole HL is maintained thicker so that the hole HL is maintained longer, so that the adjacent light can disappear as described above. At the same time, the thickness TH2 of the center of the light-blocking film LS is formed thinner to reduce the tension applied to the light-emitting element, so that the light-emitting element can be prevented from being damaged.

[0057] Hereinafter, a method for manufacturing a light emitting element according to an embodiment of the present invention will be described. Figure 1a , Figure 1b as well as Figure 2a A method for manufacturing a light-emitting element is shown.

[0058] Figures 4 to 8 It is a cross-sectional view for explaining a method for manufacturing a light emitting element according to an embodiment of the present invention.

[0059] Reference Figure 4 , the first light emitting portion LE1 , the second light emitting portion LE2 , and the third light emitting portion LE3 may be sequentially stacked on the first surface of the first substrate 100 .

[0060] According to one embodiment, the first substrate 100 may be a growth substrate 100 for growing the first light emitting portion LE1, and may also be a transfer substrate 100 for mounting on a target device. For example, when the completed light emitting element is applied to a display device such as a watch, the first light emitting portion LE1 may be grown after the first substrate 100 is cut into the same size as the display portion of the watch.

[0061] The first n-type semiconductor layer 102, the first active layer 104 and the first p-type semiconductor layer can be sequentially formed on the first substrate 100 by using growth methods such as metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydrolysis vapor phase epitaxy (HVPE), metal-organic oxidation (MOC), etc. The first ohmic layer 108 is formed on the first p-type semiconductor layer 106 by a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, etc., so that the first light-emitting unit LE1 can be formed.

[0062] On the second substrate (not shown), a second n-type semiconductor layer 202, a second active layer 204, and a second p-type semiconductor layer 206 may be sequentially formed by a growth method such as MOCVD, MBE, HVPE, or MOC. A second ohmic layer 208 may be formed on the second p-type semiconductor layer 206 by a CVD or PVD process, thereby forming a second light emitting portion LE2.

[0063] The second substrate is turned upside down and arranged so that the second ohmic layer 208 faces the first ohmic layer 108, and the second light emitting unit LE2 can be bonded to the first light emitting unit LE1 through the first bonding portion AD1. After the first light emitting unit LE1 and the second light emitting unit LE2 are bonded, the second substrate can be removed by a laser lift off (LLO) process or a chemical lift off (CLO) process.

[0064] A third n-type semiconductor layer 302, a third active layer 304, and a third p-type semiconductor layer 306 may be sequentially formed on a third substrate (not shown) by a growth method such as MOCVD, MBE, HVPE, or MOC. A third ohmic layer 308 may be formed on the third p-type semiconductor layer 306 by a CVD or PVD process, thereby forming a third light emitting portion LE3.

[0065] The third substrate is turned upside down and arranged so that the second n-type semiconductor layer 202 of the second light emitting portion LE2 faces the third ohmic layer 308 of the third light emitting portion LE3, and the second light emitting portion LE2 and the third light emitting portion LE3 can be bonded by the second bonding portion AD2. After the second light emitting portion LE2 and the third light emitting portion LE3 are bonded by the second bonding portion AD2, the third substrate can be removed by the LLO or CLO process.

[0066] Reference Figure 3b as well as Figure 5 By etching the third light-emitting portion LE3, the second light-emitting portion LE2 and the first light-emitting portion LE1, a first through hole exposing the first ohmic layer 108, a second through hole exposing the second ohmic layer 208, a third through hole exposing the third ohmic layer 308, a fourth through hole exposing the first n-type semiconductor layer 102, a fifth through hole exposing the second n-type semiconductor layer 202 and a sixth through hole exposing the third n-type semiconductor layer 302 can be formed.

[0067] According to one embodiment, during the period of forming the first through hole, the second through hole, the third through hole, the fourth through hole, the fifth through hole and the sixth through hole, the first light-emitting portion LE1, the second light-emitting portion LE2 and the third light-emitting portion LE3 are etched, so that a plurality of light-emitting structures LEDs with separated components can be formed on the first surface of the first substrate 100.

[0068] The passivation film PVT may be formed so as not to fill up each of the first through hole, the second through hole, the third through hole, the fourth through hole, the fifth through hole, and the sixth through hole and extend to the upper portion of the third n-type semiconductor layer 302 .

[0069] By etching the passivation film PVT, the first ohmic layer 108 is exposed at the bottom of the first through hole, the second ohmic layer 20 is exposed at the bottom of the second through hole, the third ohmic layer 308 is exposed at the bottom of the third through hole, the first n-type semiconductor layer 102 is exposed at the bottom of the fourth through hole, the second n-type semiconductor layer 202 is exposed at the bottom of the fifth through hole, and the third n-type semiconductor layer 302 is exposed at the bottom of the sixth through hole.

[0070] A first via pattern VA1, a second via pattern VA2, a third via pattern VA3, a fourth via pattern VA4, a fifth via pattern VA5 and a sixth via pattern VA6 may be formed respectively to form the first through hole, the second through hole, the third through hole, the fourth through hole, the fifth through hole and the sixth through hole filled with the passivation film PVT.

[0071] Also, a first pad PD1 on the first via pattern VA1 , a second pad PD2 on the second via pattern VA2 , a third pad PD3 on the third via pattern VA3 , and a common pad CPD commonly electrically connected to the fourth via pattern VA4 , the fifth via pattern VA5 , and the sixth via pattern VA6 may be formed.

[0072] Reference Figure 6 An additional light blocking film ALS may be formed on the first surface SF1_S of the first substrate 100 to fill in the spaces between the light emitting structures LED. The peripheral area PPA except the light emitting area LEA where the light emitting structure LED is formed may be covered by the additional light blocking film ALS.

[0073] Reference Figure 7 A light blocking film LS may be formed on the second surface SF2_S of the first substrate 100. According to an embodiment, the light blocking film LS may have a thickness TH greater than the wavelength of light emitted from the third light emitting portion LE3.

[0074] Reference Figure 8 A mask pattern is formed on the light blocking film LS, and the mask pattern is used as an etching pattern to etch the light blocking film LS, thereby forming holes HL that expose at least a portion of each light emitting area LEA. Each hole HL may be a light emission path for light emitted from each light emitting structure LED.

[0075] According to an embodiment, the hole HL may be formed in the light emitting area LEA, and the center of the hole HL may be identical to the center of the light emitting area LEA.

[0076] As Figure 2a In the example shown, the sidewall SW of the light blocking film LS exposed by the hole may be vertical. At this time, a mask pattern (not shown) may be selected so that the sidewall SW of the light blocking film LS is etched vertically.

[0077] As Figure 2b In another example shown, the mask pattern is used as an etching mask to etch the sidewalls SW of the light blocking film LS having the vertical sidewalls SW, thereby forming the concavoconvex surface RGH. In this case, the etching process may be wet etching.

[0078] As Figure 2c As another example, the sidewall of the light blocking film LS exposed by the hole may have a reverse slope. At this time, a mask pattern (not shown) may be selected to etch the sidewall SW of the light blocking film LS into a reverse slope.

[0079] As Figure 2dIn another example, when the light blocking film LS has a first surface SF1_LS adjacent to the second surface SF2_S of the substrate 100 and a second surface SF2_LS opposite to the first surface SF1_LS, a dishing region may be formed on the second surface SF2_LS of the light blocking film LS by using a CMP process. That is, the thickness TH of the second surface of the light blocking film LS may gradually become thinner from the end toward the center.

[0080] Accordingly, a light-emitting element including a light-emitting structure LED, a light-blocking film LS, and an additional light-blocking film ALS can be formed on the first substrate 100. As described above, since the first substrate 100 has the same size as the display portion of the target mounting device, the processes of cutting, transferring, and mounting the light-emitting structure LED formed on the first substrate 100 can be omitted, and the first substrate 100 can be directly mounted on the target device. Therefore, cutting, transferring, and mounting, which become difficult due to the reduction in the size of the light-emitting element, can be performed more easily.

[0081] Although the embodiments of the present invention are described above with reference to the accompanying drawings, it is understood by those with ordinary knowledge in the technical field to which the present invention belongs that the present invention can be implemented in other specific forms without changing its technical ideas or essential features. Therefore, it should be understood that the embodiments described above are illustrative in all aspects and are not restrictive.

Claims

1. A light emitting element, characterized in that: include: A substrate having a first surface and a second surface facing the first surface, capable of growing a gallium nitride-based semiconductor; A plurality of light-emitting portions are grown and arranged on the first surface of the substrate; a light blocking film covering at least a portion of the substrate and exposing at least a portion of a light emitting region where each of the light emitting portions is arranged; as well as an electrode pad electrically connected to the plurality of light emitting portions, Wherein, the light emitting portion is arranged between the substrate and the electrode, The light blocking film has a thickness greater than the length of the longest wavelength of the light emitted from the light emitting portion, The light blocking film defines a light extraction surface, The upper surface of the light blocking film has a concave surface, A first thickness at an end portion of the light blocking film is greater than a second thickness at a center of the light blocking film.

2. The light emitting element according to claim 1, wherein The light blocking film covers the respective ends of the light emitting regions to define a light extraction surface.

3. The light emitting element according to claim 2, wherein: The width of the light extraction surface is smaller than the thickness of the light blocking film.

4. The light emitting element according to claim 1, wherein The side wall of the light blocking film has a concavo-convex surface.

5. The light emitting element according to claim 1, wherein The light blocking film has a first surface facing the second surface of the substrate and the upper surface facing the first surface of the light blocking film.

6. The light emitting element according to claim 1, wherein The light blocking film has vertical side walls.

7. The light emitting element according to claim 1, wherein The light blocking film has an inclined side wall.

8. The light emitting element according to claim 7, wherein: The light blocking film has a first surface facing the second surface of the substrate and the upper surface facing the first surface of the light blocking film. The light-blocking film has a width that gradually increases from the first surface of the light-blocking film toward the upper surface of the light-blocking film.

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