Radiation detection device and chip

Abstract

The present invention relates to a radiation detection device and chip. Through a radiation detection circuit equipped with a gamma-ray detection probe and a neutron detection probe, the detection of gamma rays or neutrons is completed at the same time, and the detection of various particles is realized. At the same time, when the dose rate is less than or equal to the dose limit value, the detection signal of the radiation detection circuit is obtained through the pulse mode circuit, and the number of its output pulses is the same as the number of particles corresponding to the detection signal, and the external processor calculates the detection result; when the dose rate is greater than the dose limit value, it will exceed the upper limit of the pulse mode circuit count rate. At this time, the current mode circuit is used to convert the measured current into voltage, and the detection result is calculated by the external processor. Based on this, the pulse readout mode and the current readout mode work together to realize the wide range detection of radiation detection.

Description

Technical Field

[0001] The present invention relates to the field of radiation detection technology, and in particular to a radiation detection device and a chip. Background Art

[0002] Radiation detection is a technical means of observing the microscopic phenomena of a specific object through a radiation detector. Among them, the radiation detector is the core equipment of radiation detection. It mainly uses the principle of interaction between particles and matter to characterize the microscopic phenomena of nuclear radiation and particles into observable macroscopic phenomena. Traditional radiation detectors are mainly divided into three categories: gas ionization detectors, semiconductor detectors and scintillation detectors.

[0003] Since the application scenarios of radiation detection are relatively complex, there may be many different types of particles, and the characteristics of different particles vary greatly. Therefore, traditional radiation detectors cannot fully meet the detection of various particles in complex application scenarios, and it is difficult to provide objective and accurate radiation detection information. Summary of the invention

[0004] Based on this, it is necessary to provide a radiation detection device and chip to address the defects of traditional radiation detectors in complex application scenarios, which cannot fully meet the detection of various particles and have difficulty in providing objective and accurate radiation detection information.

[0005] A radiation detection device, comprising a radiation detection circuit, a pulse mode circuit and a current mode circuit;

[0006] The radiation detection circuit includes a gamma ray detection probe and a neutron detection probe;

[0007] The pulse mode circuit includes a preamplifier unit and a secondary main amplifier unit; the input end of the preamplifier unit is used to obtain the detection signal of the radiation detection circuit when the dose rate of the radiation detection circuit is less than or equal to the dose limit value; the output end of the preamplifier unit is used to connect to an external processor through the secondary main amplifier unit;

[0008] The current mode circuit includes the current measuring unit and the current conversion unit; the input end of the current measuring unit is used to obtain the detection signal of the radiation detection circuit when the dose rate of the radiation detection circuit is greater than the dose limit value, and the output end of the current measuring unit is used to connect to an external processor through the current conversion unit.

[0009] The above-mentioned radiation detection device, through the radiation detection circuit equipped with a gamma-ray detection probe and a neutron detection probe, simultaneously completes the detection of gamma rays or neutrons, and realizes the detection of various particles. At the same time, when the dose rate is less than or equal to the dose limit value, the detection signal of the radiation detection circuit is obtained through the pulse mode circuit, and the number of its output pulses is the same as the number of particles corresponding to the detection signal, and the external processor calculates the detection result; when the dose rate is greater than the dose limit value, it will exceed the upper limit of the pulse mode circuit count rate. At this time, the current mode circuit is used to convert the measured current into voltage, and the detection result is calculated by the external processor. Based on this, the pulse readout mode and the current readout mode work together to achieve wide-range detection of radiation detection.

[0010] In one embodiment, the gamma-ray detection probe includes a first electrode, a second electrode and a cadmium zinc telluride crystal;

[0011] The first electrode is arranged on one side of the CdZnTe crystal and used for connecting to a bias voltage; the second electrode is arranged on one side of the CdZnTe crystal and used for grounding.

[0012] In one of the embodiments, the neutron detection probe includes a semiconductor device and a neutron conversion layer disposed on one side of the semiconductor device;

[0013] The neutron conversion layer is used to convert incident neutrons into reaction signals;

[0014] The semiconductor device is used to generate a detection signal according to the reaction signal.

[0015] In one of the embodiments, the pulse mode circuit further includes an amplitude discrimination unit and a monostable trigger unit;

[0016] The output end of the preamplifier unit is used to connect to an external processor through the secondary main amplifier unit, the amplitude discrimination unit and the monostable trigger unit in sequence.

[0017] In one embodiment, it also includes a built-in processor disposed in the chip housing;

[0018] The output end of the preamplifier unit is connected to the built-in processor through the secondary main amplifier unit; the output end of the current measurement unit is connected to the built-in processor through the current conversion unit.

[0019] In one embodiment, the preamplifier unit includes a charge sensitive amplifier, and the secondary main amplifier unit includes a shaping filter circuit.

[0020] In one embodiment, the amplitude discrimination unit includes a discriminator or a first analog-to-digital conversion circuit, and the monostable trigger unit includes a monostable trigger circuit.

[0021] In one embodiment, the current measuring unit includes a transimpedance amplifier or a current sampling circuit; the current conversion unit may select a second analog-to-digital conversion circuit.

[0022] In one of the embodiments, it also includes a boost module;

[0023] The boost module is used to access the chip-level voltage and perform boost processing on the chip-level voltage, and use the boosted chip-level voltage to provide bias voltage for the radiation detection circuit.

[0024] A radiation detection chip comprises a chip housing and a radiation detection device of any one of the above embodiments arranged in the chip housing.

[0025] The above-mentioned radiation detection chip, through the radiation detection circuit equipped with a gamma-ray detection probe and a neutron detection probe, simultaneously completes the detection of gamma rays or neutrons, and realizes the detection of various particles. At the same time, when the dose rate is less than or equal to the dose limit value, the detection signal of the radiation detection circuit is obtained through the pulse mode circuit, and the number of its output pulses is the same as the number of particles corresponding to the detection signal, and the external processor calculates the detection result; and when the dose rate is greater than the dose limit value, it will exceed the upper limit of the pulse mode circuit count rate. At this time, the current mode circuit is used to convert the measured current into voltage, and the detection result is calculated by the external processor. Based on this, on the basis of realizing the chipization of the radiation detection device, the pulse readout mode and the current readout mode work together to realize the wide range detection of radiation detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a module structure diagram of a radiation detection device according to one embodiment;

[0027] Figure 2 This is a schematic diagram of the structure of a gamma-ray detection probe according to one embodiment;

[0028] Figure 3 This is a schematic structural diagram of a neutron detection probe according to one embodiment;

[0029] Figure 4 This is a schematic structural diagram of a neutron detection probe according to another embodiment;

[0030] Figure 5 is a pulse mode circuit diagram of an implementation method;

[0031] Figure 6 A circuit diagram is designed for a preamplifier unit of one embodiment;

[0032] Figure 7 A circuit diagram is designed for a secondary main amplifier unit of an embodiment;

[0033] Figure 8 is a schematic diagram of a module structure of a radiation detection device according to another embodiment;

[0034] Fig. 9 The figure is a schematic diagram of the structure of a circuit module of a radiation detection chip according to one embodiment. DETAILED DESCRIPTION

[0035] In order to better understand the purpose, technical solution and technical effect of the present invention, the present invention is further explained below in conjunction with the accompanying drawings and embodiments. At the same time, it is stated that the embodiments described below are only used to explain the present invention and are not used to limit the present invention.

[0036] An embodiment of the present invention provides a radiation detection device.

[0037] Figure 1 FIG. 1 is a module structure diagram of a radiation detection device according to an embodiment of the present invention. Figure 1 As shown, a radiation detection device according to an embodiment includes a radiation detection circuit 100, a pulse mode circuit 101 and a current mode circuit 102;

[0038] The radiation detection circuit 100 includes a gamma ray detection probe 200 and a neutron detection probe 201;

[0039] The pulse mode circuit 101 includes a preamplifier unit 300 and a secondary main amplifier unit 301; the input end of the preamplifier unit 300 is used to obtain the detection signal of the radiation detection circuit 100 when the dose rate of the radiation detection circuit 100 is less than or equal to the dose limit value; the output end of the preamplifier unit 300 is used to connect to an external processor through the secondary main amplifier unit 301;

[0040] The current mode circuit 102 includes the current measuring unit 400 and the current conversion unit 401; the input end of the current measuring unit 400 is used to obtain the detection signal of the radiation detection circuit 100 when the dose rate of the radiation detection circuit 100 is greater than the dose limit value, and the output end of the current measuring unit 400 is used to connect to an external processor through the current conversion unit 401.

[0041] The gamma-ray detection probe 200 is used to detect the radiation information of gamma rays, and the neutron detection probe 201 is used to detect the radiation information of neutrons.

[0042] In one embodiment, Figure 2 FIG. 1 is a schematic diagram of the structure of a gamma ray detection probe according to an embodiment of the present invention. Figure 2 As shown, a gamma-ray detection probe according to an embodiment includes a first electrode 500, a second electrode 501 and a cadmium zinc telluride crystal 502;

[0043] The first electrode 500 is disposed on one side of the CdZnTe crystal 502 and is used for accessing the bias voltage; the second electrode 501 is disposed on one side of the CdZnTe crystal 502 and is used for grounding.

[0044] The first electrode 500 and the second electrode 501 are used to form a bias voltage for the CdZnTe crystal 502. The CdZnTe crystal 502 is used to detect high-energy particles, especially gamma rays. The high-energy particles, which are gamma rays, interact with the electrons of the CdZnTe crystal 502 in the PN junction, quickly lose energy, and form electron-hole pairs. Under the action of the PN junction electric field, the electrons and holes drift to the two poles respectively, so that a detection signal is formed in the output loop between the first electrode 500 and the second electrode 501.

[0045] In one embodiment, the first electrode 500 and the second electrode 501 are both metal electrodes.

[0046] In one embodiment, the first electrode 500 is a thin sheet electrode and is disposed on the surface of the CdZnTe crystal 502. The surface of the CdZnTe crystal 502 is used to detect high-energy particles.

[0047] In one embodiment, the second electrode 501 is a thin sheet electrode and is disposed on the back side of the CdZnTe crystal 502 .

[0048] In one embodiment, the first electrode 500 and the second electrode 501 are metal electrodes with a PIN needle structure, and the first electrode 500 and the second electrode 501 can be connected to the CdZnTe crystal 502 by gold wire bonding, tape bonding, flip-chip bonding, etc. The metal electrode with a PIN needle structure and the CdZnTe crystal 502 facilitate the chip-based radiation detection probe.

[0049] In one embodiment, the gamma-ray detection probe includes one or more CdZnTe crystals 502. One CdZnTe crystal 502 may be a planar structure or a grid structure. Multiple CdZnTe crystals 502 may be arranged in an array. It should be understood that the structural types of the CdZnTe crystals 502 in the gamma-ray detection probe given in this embodiment include but are not limited to this.

[0050] In one embodiment, the three-dimensional size of the CdZnTe crystal 502 is 10×10×1 mm. 3 .

[0051] In one embodiment, the neutron detection probe 201 includes a semiconductor device and a neutron conversion layer disposed on one side of the semiconductor device;

[0052] The neutron conversion layer is used to convert incident neutrons into reaction signals;

[0053] The semiconductor device is used to generate a detection signal according to the reaction signal.

[0054] When the neutron detection probe 201 detects neutron radiation, the neutron conversion layer reacts with the incident neutrons to generate a reaction signal. In one embodiment, the reaction signal includes an electric charge or a light signal.

[0055] In one embodiment, the neutron conversion layer includes a conversion material of 10 B. 6 Li, 158 Gd, 157 Gd or 113 As a preferred embodiment, the neutron conversion layer uses a conversion material of 6 Li conversion layer. 6 Li and thermal neutrons have a large reaction interface, and the secondary gamma rays produced have high energy. 6 When Li reacts with neutrons, it emits a 3 H energy is E 3H = 2.73 MeV and an alpha particle with energy E α =2.05MeV.

[0056] In one embodiment, based on 6 Li conversion materials can be further selected 6 LiF conversion materials, 6 LiF has a higher density of lithium atoms per unit mass. That is, the conversion material is 6 The conversion layer of Li can further select the conversion material as 6 LiF conversion layer.

[0057] The semiconductor device receives the reaction signal emitted by the neutron conversion layer, and the semiconductor material inside the semiconductor device interacts with the reaction signal to generate a detection signal. In one embodiment, the detection signal is an electrical signal.

[0058] In one embodiment, Figure 3 FIG. 1 is a schematic diagram of the structure of a neutron detection probe according to an embodiment of the present invention. Figure 3 As shown, the semiconductor device includes a PN junction, and the neutron conversion layer includes 6 LiF layer;

[0059] Said 6 The LiF layer is arranged on the surface of the N region of the PN junction.

[0060] like Figure 1 As shown, 6 The LiF layer is set on the surface of the N region of the PN junction. 6The LiF layer reacts after receiving the incident neutrons, generating α particles as the reaction signal. When the neutron detection probe of one embodiment is used, there is a bias voltage at both ends of the PN junction. At this time, the α particles incident on the depletion layer of the PN junction will generate an effective pulse signal, namely the detection signal.

[0061] In one embodiment, the semiconductor device can be a diode.

[0062] In one embodiment, 6 The LiF layer is directly coated on the surface of the N region of the PN junction and is in direct contact with the N region of the PN junction. Generally, the surface of semiconductor devices with PN junctions has a protective layer. 6 The LiF layer is coated into the protective layer and is in direct contact with the surface of the N region of the PN junction.

[0063] It should be noted that, under the premise of meeting the generation requirements of the detection signal, 6 The LiF layer may also be disposed on the surface of the P region of the PN junction.

[0064] In one embodiment, Figure 4 FIG. 1 is a schematic diagram of the structure of a neutron detection probe according to another embodiment of the present invention. Figure 4 As shown, the semiconductor device includes a photoelectric semiconductor, and the neutron conversion layer includes 6 LiF and ZnS(Ag) mixed coating.

[0065] Among them, Figure 4 As shown, 6 The LiF and ZnS (Ag) mixed coating is set on one side of the photoelectric semiconductor. 6 LiF and ZnS (Ag) are mixed in a certain proportion to form a scintillator. 6 When the LiF and ZnS (Ag) mixed coating receives incident neutrons, the neutrons react with 6Li to produce gamma rays, which deposit energy in the ZnS (Ag) and emit fluorescence. The fluorescence is incident on the photoelectric semiconductor, which is converted into an electrical signal through the photoelectric effect, i.e., a detection signal.

[0066] In one embodiment, the photoelectric semiconductor includes a PIN semiconductor detector or a silicon photomultiplier tube.

[0067] In one embodiment, 6 LiF and ZnS(Ag) mixed coating 6 The mixing ratio of LiF and ZnS(Ag) is: 6 LiF:ZnS(Ag) is 1:4, or 6 LiF:ZnS(Ag) is 1:2, etc.

[0068] In one embodiment,6 The thickness of the LiF and ZnS (Ag) mixed coating is 400 to 500 μm. 6 LiF and ZnS(Ag) mixed coating, balanced 6 Detection efficiency and transmittance of LiF and ZnS(Ag) mixed coatings.

[0069] In one embodiment, the neutron detection probe 201 of another embodiment further includes a 6 A protective layer between the LiF and ZnS (Ag) mixed coatings. As a preferred embodiment, 6 The protective layer between the LiF and ZnS(Ag) mixed coatings includes an epoxy resin layer.

[0070] Among them, the two probes in the radiation detection circuit, namely the gamma ray detection probe 200 and the neutron detection probe 201, both output detection signals to the pulse mode circuit. Among them, the detection signal is positively correlated with the dose rate. The dose rate can be determined according to the detection signal. The pulse mode circuit can selectively obtain the detection signal of the gamma ray detection probe 200 or the neutron detection probe 201, or receive the detection signal of the gamma ray detection probe 200 or the neutron detection probe 201 at the same time.

[0071] The electrical signal size of the detection signal is positively correlated with the dose rate, and the dose rate includes a current value or a charge value. The dose limit value includes a preset current value or a preset charge value.

[0072] In one embodiment, the detection signals output by the two probes in the radiation detection circuit are ionized charge signals. The detection signals do not have an avalanche amplification process. The charge of the detection signals is usually in the order of 0.1fC to 100fC, which is proportional to the ionizing radiation deposition energy. When the dose rate is less than or equal to the dose limit value, the detection signals of the two probes or the detection signals of any one probe are obtained through the pulse mode circuit 101, and the number of output pulses is the same as the number of X / γ photons or neutrons corresponding to the detection signal, and the external processor calculates the detection result; when the dose rate is greater than the dose limit value, it will exceed the upper limit of the count rate of the pulse mode circuit 101. At this time, the current mode circuit 102 is used to convert the measured current into voltage, and the detection result is calculated by the external processor. Based on this, while realizing the chipization of the radiation detection device, the pulse readout mode and the current readout mode work together to realize the wide range detection of X / γ radiation and neutron radiation by the radiation detection chip.

[0073] In one embodiment, the pulse mode circuit 101 can be a combination circuit of discrete devices such as JFET and transistor, a combination circuit of JFET and operational amplifier, or a dedicated integrated circuit based on CMOS technology. As a preferred implementation, the pulse mode circuit 101 uses a dedicated integrated circuit based on CMOS technology. Figure 5 A pulse mode circuit diagram of an embodiment is shown in FIG. Figure 5 As shown, in a dedicated integrated circuit based on CMOS technology, the preamplifier unit 300 includes a charge sensitive amplifier 600. The charge sensitive amplifier 600 is used to convert the charge signal into a voltage signal. As the first stage amplification, its noise performance and frequency characteristics have the greatest impact on the circuit characteristics. The secondary main amplifier unit 301 includes a shaping filter circuit 601. As a preferred implementation, the shaping filter circuit 601 can use a bandpass filter to filter out signals of irrelevant frequency bands and improve the signal-to-noise ratio of the output signal. In one embodiment, the amplitude discrimination unit 702 includes a comparator 602, and a digital signal is output through the comparator 602.

[0074] As a better implementation method, in order to obtain low noise, low power consumption and appropriate gain bandwidth, etc., in the circuit design stage, the appropriate process can be selected according to theoretical calculations and simulation results, and the parameters such as the aspect ratio of each transistor can be gradually adjusted. Since it is difficult to realize high-resistance resistors inside integrated circuits, the charge accumulated on each feedback capacitor in the CMOS-based special integrated circuit can be discharged by designing a discharge circuit.

[0075] In one embodiment, Figure 6 A circuit diagram of a preamplifier unit of an embodiment is designed, such as Figure 6 As shown, the preamplifier unit 300 of one embodiment has the beneficial effects of obtaining low noise, low power consumption and suitable gain bandwidth.

[0076] In one embodiment, Figure 7 A circuit diagram of a secondary main amplifier unit of an embodiment is shown in FIG. Figure 7 As shown, the secondary main amplifier unit 301 of one embodiment can effectively improve the signal-to-noise ratio of the output signal of the secondary main amplifier unit 301 .

[0077] In one embodiment, Figure 8 FIG. 1 is a schematic diagram of a module structure of a radiation detection device according to another embodiment of the present invention. Figure 8 As shown, the pulse mode circuit 101 further includes an amplitude discrimination unit 702 and a monostable trigger unit 703;

[0078] The output end of the preamplifier unit 300 is used to connect to an external processor through the secondary main amplifier unit 301, the amplitude discrimination unit 702 and the monostable trigger unit 703 in sequence.

[0079] The output end of the preamplifier unit 300 is connected to the built-in processor through the secondary main amplifier unit 301 ; the output end of the current measurement unit 400 is connected to the external processor through the current conversion unit 401 .

[0080] In one embodiment, if Figure 8 As shown, the radiation detection device also includes a built-in processor 704, which is used to replace the external processor to achieve self-calculation of the detection results of the radiation detection device and improve the versatility of the radiation detection device.

[0081] In one embodiment, the amplitude discrimination unit 702 can use a discriminator or a first analog-to-digital conversion circuit, and a voltage comparison circuit is configured after the discriminator or the first analog-to-digital conversion circuit to output a LVCMOS digital signal to the monostable trigger unit 703 .

[0082] In one embodiment, a monostable trigger circuit may be used for the monostable trigger unit 703. The monostable trigger unit 703 receives the digital signal output by the amplitude discrimination unit 702, converts the digital signal output by the amplitude discrimination unit 702 into a pulse signal, and sends the pulse signal to an external or built-in processor, so that the external or built-in processor can calculate the radiation detection result through the pulse signal.

[0083] In one embodiment, the current measuring unit 400 may select a transimpedance amplifier or a current sampling circuit to convert the current signal of the gamma ray detection probe 200 and / or the neutron detection probe 201 into a voltage output. As a preferred implementation, a filtering circuit is also configured at the subsequent stage of the current measuring unit 400 to filter out high-frequency noise in the voltage output of the current measuring unit 400.

[0084] In one embodiment, the current conversion unit 401 may use a second analog-to-digital conversion circuit to convert the voltage output of the current measurement unit 400 into a digital signal, so that an external or built-in processor can calculate the radiation detection result through the digital signal.

[0085] In one embodiment, if Figure 8 As shown, the radiation detection device of another embodiment further includes a boost module 800;

[0086] The boost module 800 is used to access the chip-level voltage and perform boost processing on the chip-level voltage, and use the boosted chip-level voltage to provide bias voltage for the gamma-ray detection probe and the neutron detection probe.

[0087] In one embodiment, the boost module 800 may be a transformer coil or a boost chip. As a preferred implementation, the boost module 800 may be a boost chip.

[0088] The radiation detection device of any of the above embodiments, through the radiation detection circuit 100 equipped with the gamma ray detection probe 200 and the neutron detection probe 201, simultaneously completes the detection of gamma rays or neutrons, and realizes the detection of various particles. At the same time, when the dose rate is less than or equal to the dose limit value, the detection signal of the radiation detection circuit is obtained through the pulse mode circuit 101, and the number of its output pulses is the same as the number of particles corresponding to the detection signal, and the external processor calculates the detection result; and when the dose rate is greater than the dose limit value, it will exceed the upper limit of the pulse mode circuit count rate. At this time, the current mode circuit 102 is used to convert the measured current into voltage, and the detection result is calculated by the external processor. Based on this, the pulse readout mode and the current readout mode work together to achieve wide-range detection of radiation detection.

[0089] An embodiment of the present invention also provides a radiation detection chip.

[0090] Fig. 9 FIG. 1 is a schematic diagram of a circuit module structure of a radiation detection chip according to an embodiment of the present invention. Fig. 9 As shown, a radiation detection chip according to an embodiment includes a chip housing 900, and a radiation detection device as described in any of the above embodiments disposed in the chip housing 900;

[0091] In one embodiment, the chip housing 900 is an electromagnetic shielding box, and the circuits disposed in the chip housing 900 are arranged in a distributed manner to improve electromagnetic compatibility performance.

[0092] As a preferred embodiment, a chip substrate is provided in the chip housing 900, and the pulse mode circuit 101, the current mode circuit 102, the built-in processor 704, the gamma ray detection probe 200 and the neutron detection probe 201 are all fixed on the chip substrate, and the electrical connection among the pulse mode circuit 101, the current mode circuit 102, the gamma ray detection probe 200 and the neutron detection probe 201 is achieved by gold wire bonding or flip chip bonding.

[0093] In one of the embodiments, the radiation detection chip is packaged by plastic packaging or ceramic packaging.

[0094] In one embodiment, the built-in processor 704 is a single chip microcomputer or a DSP processor.

[0095] The radiation detection chip of any of the above embodiments, through the radiation detection circuit 100 configured with the gamma ray detection probe 200 and the neutron detection probe 201, simultaneously completes the detection of gamma rays or neutrons, and realizes the detection of various particles. At the same time, when the dose rate is less than or equal to the dose limit value, the detection signal of the radiation detection circuit is obtained through the pulse mode circuit 101, and the number of its output pulses is the same as the number of particles corresponding to the detection signal, and the external processor calculates the detection result; and when the dose rate is greater than the dose limit value, it will exceed the upper limit of the pulse mode circuit count rate. At this time, the current mode circuit 102 is used to convert the measured current into voltage, and the detection result is calculated by the external processor. Based on this, the pulse readout mode and the current readout mode work together to achieve wide-range detection of radiation detection.

[0096] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0097] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A radiation detection device, characterized in that: It includes a radiation detection circuit, a pulse mode circuit, a current mode circuit and a boost module; The radiation detection circuit includes a gamma ray detection probe and a neutron detection probe; The pulse mode circuit includes a preamplifier unit, a secondary main amplifier unit, an amplitude discrimination unit and a monostable trigger unit; the input end of the preamplifier unit is used to obtain the detection signal of the radiation detection circuit when the dose rate of the radiation detection circuit is less than or equal to the dose limit value; The output end of the preamplifier unit is used to connect to an external processor through the secondary main amplifier unit; the output end of the preamplifier unit is used to connect to an external processor through the secondary main amplifier unit, the amplitude discrimination unit and the monostable trigger unit in sequence; The current mode circuit includes a current measuring unit and a current conversion unit; the input end of the current measuring unit is used to obtain the detection signal of the radiation detection circuit when the dose rate of the radiation detection circuit is greater than the dose limit value, and the output end of the current measuring unit is used to connect to an external processor through the current conversion unit; The boost module is used to access the chip-level voltage and perform boost processing on the chip-level voltage, and use the boosted chip-level voltage to provide bias voltage for the radiation detection circuit.

2. The radiation detection device according to claim 1, characterized in that: The gamma ray detection probe comprises a first electrode, a second electrode and a cadmium zinc telluride crystal; The first electrode is arranged on one side of the CdZnTe crystal and used for connecting to a bias voltage; the second electrode is arranged on one side of the CdZnTe crystal and used for grounding.

3. The radiation detection device according to claim 1, characterized in that: The neutron detection probe comprises a semiconductor device and a neutron conversion layer arranged on one side of the semiconductor device; The neutron conversion layer is used to convert incident neutrons into reaction signals; The semiconductor device is used to generate a detection signal according to the reaction signal.

4. The radiation detection device according to claim 1, characterized in that: Also included is a built-in processor disposed within the chip housing; The output end of the preamplifier unit is connected to the built-in processor through the secondary main amplifier unit; the output end of the current measurement unit is connected to the built-in processor through the current conversion unit.

5. The radiation detection device according to claim 1, characterized in that: The preamplifier unit includes a charge sensitive amplifier, and the secondary main amplifier unit includes a shaping filter circuit.

6. The radiation detection device according to claim 1, characterized in that: The amplitude discrimination unit includes a discriminator or a first analog-to-digital conversion circuit, and the monostable trigger unit includes a monostable trigger circuit.

7. The radiation detection device according to claim 1, characterized in that: The current measuring unit includes a transimpedance amplifier or a current sampling circuit; the current converting unit includes a second analog-to-digital converting circuit.

8. A radiation detection chip, characterized in that: The invention comprises a chip housing and a radiation detection device as claimed in any one of claims 1 to 7 arranged in the chip housing.

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