Transparent display device

Abstract

A transparent display device includes: a substrate having a light-emitting area and a transparent area; a light-emitting diode, which is arranged in the light-emitting area and includes a first electrode, a light-emitting layer, and a second electrode; a first connection pattern, which is arranged between the light-emitting area and the transparent area, is formed of the same material as the first electrode and is formed in the same layer as the first electrode; and a second connection pattern, which is arranged in the transparent area and connected to the first connection pattern, wherein the second electrode overlaps with the first connection pattern and the second connection pattern, and is electrically connected to the first connection pattern and the second connection pattern.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of Korean Patent Application No. 10-2019-0162778, filed on Dec. 9, 2019, which is hereby incorporated by reference in its entirety. Technical Field

[0003] The present disclosure relates to a display device, and more particularly to a transparent display device having a light-emitting area and a transparent area. Background Art

[0004] As one of the flat panel display devices, the electroluminescent display device has a wide viewing angle due to self-luminescence compared to the liquid crystal display device, and has advantages of thin thickness, light weight, and low power consumption because a backlight unit is not required.

[0005] In addition, the electroluminescent display device is driven by a direct current (DC) low voltage and has a fast response time. In addition, since its components are solid, the electroluminescent display device is strong against external impact and is used in a wide temperature range, and in particular, the electroluminescent display device can be manufactured at low cost.

[0006] Recently, transparent display devices using electroluminescent display devices have been widely developed. A transparent display device is a display device in which the background behind the screen is visible. Therefore, image information and the surrounding environment can be displayed together.

[0007] The transparent display device using the electroluminescent display device includes a plurality of pixels, each pixel having red, green and blue light emitting regions. By selectively driving the red, green and blue light emitting regions, various color images are displayed.

[0008] A red light-emitting layer, a green light-emitting layer and a blue light-emitting layer are respectively arranged in the red sub-pixel, the green sub-pixel and the blue sub-pixel, and each light-emitting layer is formed by a vacuum thermal evaporation process in which a light-emitting material is selectively deposited using a fine metal mask (FMM).

[0009] However, in a transparent display device using an electroluminescent display device, since the size of a light emitting region is relatively small, it is not easy to form a light emitting layer through an evaporation process.

[0010] Furthermore, the evaporation process increases manufacturing costs due to mask preparation, and has problems when applied to large-size, high-resolution display devices due to mask manufacturing deviations, sagging, shadow effects, etc. Summary of the invention

[0011] Accordingly, the present disclosure is directed to a transparent display device that substantially obviates one or more problems due to limitations and disadvantages of the related art.

[0012] An object of the present disclosure is to provide a transparent display device having a large size and a high resolution.

[0013] Additional features and advantages of the present disclosure will be described in the following description, some of which will be apparent from the description or can be understood through the implementation of the present disclosure. These and other advantages of the present disclosure can be realized and obtained through the structures particularly pointed out in the specification, claims and drawings.

[0014] To achieve these and other advantages and in accordance with the purposes of the present disclosure, as specifically and broadly described herein, a transparent display device is provided, comprising: a substrate having a light-emitting area and a transparent area; a light-emitting diode, the light-emitting diode being arranged in the light-emitting area and comprising a first electrode, a light-emitting layer, and a second electrode; a first connection pattern, the first connection pattern being arranged between the light-emitting area and the transparent area, being formed of the same material as the first electrode and being formed in the same layer as the first electrode; and a second connection pattern, the second connection pattern being arranged in the transparent area and connected to the first connection pattern, wherein the second electrode overlaps with the first connection pattern and the second connection pattern, and is electrically connected to the first connection pattern and the second connection pattern.

[0015] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the disclosure as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings, which are included to provide a further understanding of the present disclosure and are incorporated in this application and constitute a part of this application, illustrate embodiments of the present disclosure and, together with the description, are used to explain the principles of the embodiments of the present disclosure. In the drawings:

[0017] Figure 1 is a circuit diagram of one pixel of a transparent display device according to an embodiment of the present disclosure;

[0018] Figure 2 is a schematic plan view of a transparent display device according to a first embodiment of the present disclosure;

[0019] Figure 3 is a schematic cross-sectional view of a transparent display device according to a first embodiment of the present disclosure, and corresponds to Figure 2 Line I-I';

[0020] Figures 4A to 4Gis a cross-sectional view schematically illustrating a manufacturing process of a transparent display device according to a first embodiment of the present disclosure;

[0021] Figure 5 is a schematic cross-sectional view of a transparent display device according to a second embodiment of the present disclosure;

[0022] Fig. 6A and Figure 6B is a cross-sectional view schematically illustrating a manufacturing process of a transparent display device according to a second embodiment of the present disclosure;

[0023] Figure 7 is a schematic cross-sectional view of a transparent display device according to a third embodiment of the present disclosure;

[0024] Fig. 8A and Figure 8B is a cross-sectional view schematically illustrating a manufacturing process of a transparent display device according to a third embodiment of the present disclosure;

[0025] Fig. 9 is a schematic plan view of a transparent display device according to a fourth embodiment of the present disclosure;

[0026] Fig.10 is a schematic cross-sectional view of a transparent display device according to a fourth embodiment of the present disclosure, and corresponds to Fig. 9 Line II-II';

[0027] Fig.11 is a schematic plan view of a transparent display device according to a fifth embodiment of the present disclosure;

[0028] Fig.12 is corresponding to Fig.11 A cross-sectional view along line III-III';

[0029] Fig.13 is corresponding to Fig.11 A cross-sectional view of line IV-IV';

[0030] Fig.14 is a schematic plan view of a transparent display device according to a sixth embodiment of the present disclosure. DETAILED DESCRIPTION

[0031] Reference will now be made in detail to exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings.

[0032] The transparent display device according to the embodiment of the present disclosure uses an electroluminescent display device to display an image. The transparent display device using the electroluminescent display device includes a plurality of pixels to display an image, and each of the plurality of pixels includes a red sub-pixel, a green sub-pixel, and a blue sub-pixel. The first, second, and third sub-pixel regions corresponding to the red sub-pixel, the green sub-pixel, and the blue sub-pixel may have Figure 1 The construction shown in .

[0033] Figure 1 is a circuit diagram of one pixel of a transparent display device according to an embodiment of the present disclosure.

[0034] exist Figure 1 In the embodiment of the present disclosure, the transparent display device includes a plurality of gate lines and a plurality of data lines that cross each other to define sub-pixel areas. In particular, Figure 1 In the example of , the gate line GL and the data line DL cross each other to define the first sub-pixel region P1, the second sub-pixel region P2, and the third sub-pixel region P3. Each of the first sub-pixel region P1, the second sub-pixel region P2, and the third sub-pixel region P3 includes a light emitting region EA and a transparent region TA. Therefore, one pixel may include three light emitting regions EA and three transparent regions TA.

[0035] Alternatively, the transparent areas TA of the first sub-pixel region P1, the second sub-pixel region P2, and the third sub-pixel region P3 may be connected to each other and integrally provided. That is, one pixel may include three emission areas EA and one transparent area TA, but is not limited thereto.

[0036] The transparent display device according to an embodiment of the present disclosure displays image information through the light emitting area EA while displaying surrounding environment information such as a background through the transparent area TA.

[0037] In each pixel region P, a switching thin film transistor T1, a driving thin film transistor T2, a storage capacitor Cst, and a light emitting diode De are formed in a light emitting region of each of the first sub-pixel region P1, the second sub-pixel region P2, and the third sub-pixel region P3.

[0038] More specifically, the gate line GL extends in the horizontal direction, and the data line DL extends in the vertical direction. The first sub-pixel region P1, the second sub-pixel region P2, and the third sub-pixel region P3 are sequentially arranged in the horizontal direction. The emission area EA and the transparent area TA of each sub-pixel region P1, P2, and P3 may be arranged in the vertical direction.

[0039] In the light emitting area EA of each sub-pixel area P1, P2 and P3, the gate electrode of the switching thin film transistor T1 is connected to the gate line GL, and the source electrode of the switching thin film transistor T1 is connected to the data line DL. The gate electrode of the driving thin film transistor T2 is connected to the drain electrode of the switching thin film transistor T1, and the source electrode of the driving thin film transistor T2 is connected to the high voltage power supply VDD. The anode of the light emitting diode De is connected to the drain electrode of the driving thin film transistor T2, and the cathode of the light emitting diode De is connected to the low voltage power supply VSS. The storage capacitor Cst is connected to the gate electrode and the drain electrode of the driving thin film transistor T2.

[0040] The transparent display device using the electroluminescent display device is driven to display an image. For example, when the switching thin film transistor T1 is turned on by the gate signal applied through the gate line GL, the data signal from the data line DL is applied to the gate electrode of the driving thin film transistor T2 and the electrode of the storage capacitor Cst through the switching thin film transistor T1.

[0041] When the driving thin film transistor T2 is turned on by the data signal, the current flowing through the light emitting diode De is controlled, thereby displaying an image. The light emitting diode De emits light due to the current supplied from the high voltage power source VDD via the driving thin film transistor T2.

[0042] That is, the amount of current flowing through the light emitting diode De is proportional to the size of the data signal, and the intensity of light emitted by the light emitting diode De is proportional to the amount of current flowing through the light emitting diode De. Therefore, the first sub-pixel region P1, the second sub-pixel region P2, and the third sub-pixel region P3 display different gray levels according to the size of the data signal, and as a result, the transparent display device displays an image.

[0043] In addition, when the switching thin film transistor T1 is turned off, the storage capacitor Cst maintains the charge corresponding to the data signal within one frame. Therefore, even if the switching thin film transistor T1 is turned off, the storage capacitor Cst makes the amount of current flowing through the light emitting diode De constant, and the grayscale displayed by the light emitting diode De is maintained until the next frame.

[0044] In addition, in addition to the switching thin film transistor T1 , the driving thin film transistor T2 , and the storage capacitor Cst, one or more thin film transistors and / or capacitors may be added in each sub-pixel region P1 , P2 , P3 .

[0045] For example, in a transparent display device using an electroluminescent display device, while a data signal is applied to the gate electrode of the driving thin film transistor T2, the driving thin film transistor T2 is turned on for a long time, and the light emitting diode De emits light, thereby displaying a gray scale. Due to the long-term application of the data signal, the driving thin film transistor T2 deteriorates. Therefore, the mobility and / or threshold voltage Vth of the driving thin film transistor T2 changes, so that the pixel area P of the electroluminescent display device displays different gray levels for the same data signal. This causes uneven brightness, thereby reducing the image quality of the display device.

[0046] Therefore, in order to compensate for the change in mobility and / or threshold voltage of the driving thin film transistor T2, at least one sensing thin film transistor and / or capacitor for sensing voltage change may be further added in each sub-pixel region P1, P2, and P3. The sensing thin film transistor and / or capacitor may be connected to a reference line for applying a reference voltage and outputting a sensing voltage.

[0047] According to the light emission direction of the electroluminescent display device used, the transparent display device can be divided into a bottom emission type and a top emission type. In the bottom emission type display device, the light from the light emitting diode De is output through the anode toward the substrate on which the thin film transistors T1 and T2 are formed, and in the top emission type display device, the light from the light emitting diode De is output through the cathode toward the direction opposite to the substrate. Generally, since the thin film transistors T1 and T2 are formed below the light emitting diode De in the electroluminescent display device, in the bottom emission type display device, the size of the effective light emitting area is limited by the thin film transistors T1 and T2, and the top emission type display device has a larger effective light emitting area than the bottom emission type display device. Therefore, the top emission type display device has a higher aperture ratio than the bottom emission type display device, so that the top emission type display device is widely used in display devices with large size and high resolution.

[0048] On the other hand, since the cathode is generally formed of a metal material, in a top-emitting display device, the cathode must be formed to a relatively thin thickness so that light is output through the cathode. Therefore, in a display device having a large size and a high resolution, the cathode resistance increases, and a VSS voltage drop is generated due to the cathode resistance, thereby causing a problem of uneven brightness.

[0049] Therefore, the transparent display device according to the embodiment of the present disclosure has a structure for reducing cathode resistance.

[0050] Figure 2 is a schematic plan view of a transparent display device according to a first embodiment of the present disclosure, and mainly shows a bank configuration.

[0051] like Figure 2As shown in FIG. 1 , in the transparent display device 1000 according to the first embodiment of the present disclosure, one pixel P includes a light emitting area EA and a transparent area TA. At this time, one pixel P may include three light emitting areas EA and one transparent area TA, and each light emitting area EA has the same configuration except for the size.

[0052] More specifically, the pixel P may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and each of the red sub-pixel, the green sub-pixel, and the blue sub-pixel may include a light-emitting area EA and a transparent area TA. At this time, the light-emitting area EA may include a first light-emitting area EA1, a second light-emitting area EA2, and a third light-emitting area EA3 corresponding to the red sub-pixel, the green sub-pixel, and the blue sub-pixel, respectively. In addition, the transparent area TA of each of the red sub-pixel, the green sub-pixel, and the blue sub-pixel may be connected to each other and formed integrally. Alternatively, the transparent area TA may be separated for each of the red sub-pixel, the green sub-pixel, and the blue sub-pixel.

[0053] The emission area EA and the transparent area TA are arranged in a first direction (eg, vertical direction), and the first, second, and third emission areas EA1, EA2, and EA3 are arranged in a second direction (eg, horizontal direction) perpendicular to the first direction.

[0054] Here, the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 may have different sizes. For example, the size of the second light emitting area EA2 of the green sub-pixel may be larger than the size of the first light emitting area EA1 of the red sub-pixel and smaller than the size of the third light emitting area EA3 of the blue sub-pixel, but not limited thereto. In this case, the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 may have the same length along the first direction and different widths along the second direction, but not limited thereto.

[0055] Since the light emitting diodes arranged in each sub-pixel are formed of light emitting materials having different characteristics, the light emitting diodes have different lifespans and efficiencies, and the lifespan of the display device may be reduced due to the difference in the lifespans of the light emitting diodes. Therefore, in the present disclosure, by making the sizes of the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 of the red sub-pixel, the green sub-pixel, and the blue sub-pixel different, the lifespan and efficiency of the light emitting diodes arranged in each sub-pixel may be optimized, thereby solving the problem of reduced device lifespan, and thus improving the lifespan of the display device.

[0056] The embankment 170 is formed between the first, second, and third emission areas EA1, EA2, and EA3 and between the emission areas EA and the transparent area TA. The embankment 170 has a first opening 170a corresponding to each of the first, second, and third emission areas EA1, EA2, and EA3, and a second opening 170c corresponding to the transparent area TA.

[0057] Here, the second opening 170c is formed as a single opening corresponding to the transparent area TA of the first sub-pixel region P1, the second sub-pixel region P2, and the third sub-pixel region P3. Alternatively, the second opening 170c may be divided and formed separately for the first sub-pixel region P1, the second sub-pixel region P2, and the third sub-pixel region P3.

[0058] Each of the first opening 170a and the second opening 170c is shown to have a rectangular shape, but is not limited thereto. Each of the first opening 170a and the second opening 170c may have various shapes, such as a rectangular shape with rounded corners, an oval shape, and the like.

[0059] In addition, first and second auxiliary electrodes 114 and 146 and first and second connection patterns 162 and 164 are formed under the bank 170 .

[0060] The first auxiliary electrode 114 may be provided in a line shape extending along the first direction, and one first auxiliary electrode 114 may be provided between pixels P adjacent to each other along the second direction.

[0061] The second auxiliary electrode 146 is disposed between the emission area EA and the transparent area TA and partially overlaps the first auxiliary electrode 114. The second auxiliary electrode 146 is connected to the first auxiliary electrode 114 through the contact hole 140d.

[0062] Here, the first auxiliary electrode 114 may include a protruding portion between the emission area EA and the transparent area TA, and the second auxiliary electrode 146 may overlap the protruding portion of the first auxiliary electrode 114. However, the present disclosure is not limited thereto.

[0063] In addition, the first connection pattern 162 is disposed between the emission area EA and the transparent area TA and partially overlaps the second auxiliary electrode 146. The bank 170 has an auxiliary contact hole 170b corresponding to the first connection pattern 162. The first connection pattern 162 is connected to the second auxiliary electrode 146 through a contact hole (not shown) below the auxiliary contact hole 170b.

[0064] The second connection pattern 164 is disposed corresponding to the transparent area TA and is exposed through the second opening 170c. The second connection pattern 164 is in direct contact with the first connection pattern 162. The second connection pattern 164 may overlap and cover the first connection pattern 162. Alternatively, the second connection pattern 164 may extend from the first connection pattern 162.

[0065] In addition, although not shown in the figure, in each of the first light emitting area EA1, the second light emitting area EA2 and the third light emitting area EA3, the first electrode is formed of the same material as the first connection pattern 162, and the first electrode is exposed through the first opening 170a. A light emitting layer is formed on the exposed first electrode, and a second electrode is formed on the light emitting layer. The first electrode, the light emitting layer and the second electrode constitute a light emitting diode. The first electrode is used as an anode, and the second electrode is used as a cathode.

[0066] At this time, the second electrode is formed substantially over the entire surface of the substrate and is electrically connected to the first connection pattern 162 thereunder through the auxiliary contact hole 170b. The second electrode is also electrically connected to the first auxiliary electrode 114 and the second auxiliary electrode 146 through the first connection pattern 162, thereby reducing the resistance of the second electrode, that is, the cathode resistance.

[0067] In addition, the second electrode is also disposed in the transparent area TA and is electrically connected to the second connection pattern 164 through the second opening 170c. The second electrode is electrically connected to the first connection pattern 162 and the first and second auxiliary electrodes 114 and 146 through the second connection pattern 164.

[0068] Here, contact resistance is generated between the second electrode and the first connection pattern 162, and as the contact resistance increases, the light emitting efficiency decreases. By increasing the size of the auxiliary contact hole 170b, the contact resistance can be reduced. However, when the size of the auxiliary contact hole 170b increases, the size of the light emitting area EA and / or the transparent area TA decreases, thereby reducing the aperture ratio of the pixel P.

[0069] Therefore, in the transparent display device 1000 according to the first embodiment of the present disclosure, while maximizing the aperture ratio of the pixel P by minimizing the size of the auxiliary contact hole 170 b, the contact resistance of the second electrode can be reduced by electrically connecting the second electrode to the second connection pattern 164 and the first connection pattern 162 .

[0070] Will refer to Figure 3 A cross-sectional structure of a transparent display device 1000 according to a first embodiment of the present disclosure is described in detail.

[0071] Figure 3 is a schematic cross-sectional view of a transparent display device according to a first embodiment of the present disclosure, and corresponds to Figure 2The line I-I'.

[0072] like Figure 3 As shown in FIG. 1 , in the transparent display device 1000 according to the first embodiment of the present disclosure, a pixel P including a light emitting area EA and a transparent area TA is defined on a substrate 100. A light shielding pattern 112 and a first auxiliary electrode 114 of a first conductive material such as metal are formed on the substrate 100. Here, at least a portion of the light shielding pattern 112 may be disposed in the light emitting area EA, and the first auxiliary electrode 114 may be disposed between the light emitting area EA and the transparent area TA.

[0073] The substrate 100 may be a glass substrate or a plastic substrate. For example, polyimide may be used as the plastic substrate, but is not limited thereto.

[0074] In addition, the first auxiliary electrode 114 may be provided in a line shape extending in the first direction.

[0075] The light shielding pattern 112 and the first auxiliary electrode 114 may be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof, and may have a single-layer structure or a multi-layer structure. For example, the light shielding pattern 112 and the first auxiliary electrode 114 may have a double-layer structure including a lower layer of a molybdenum-titanium alloy (MoTi) and an upper layer of copper (Cu), and the upper layer may have a thickness thicker than the lower layer.

[0076] A buffer layer 120 is formed on the light shielding pattern 112 and the first auxiliary electrode 114 substantially on the entire surface of the substrate 100. The buffer layer 120 may be made of a material such as silicon oxide (SiO 2 ) or silicon nitride (SiN x ) and can be formed as a single layer or multiple layers.

[0077] Here, the buffer layer 120 has a buffer hole 120 a on the light shielding pattern 112 , and a top surface of the light shielding pattern 112 is partially exposed through the buffer hole 120 a .

[0078] A semiconductor layer 122 and a capacitor electrode 124 are patterned on the buffer layer 120. The semiconductor layer 122 and the capacitor electrode 124 are spaced apart from each other over the light shielding pattern 112. The light shielding pattern 112 blocks light incident on the semiconductor layer 122, preventing the semiconductor layer 122 from being degraded by the light.

[0079] The semiconductor layer 122 and the capacitor electrode 124 may be formed of polysilicon, in which case both ends of the semiconductor layer 122 and the capacitor electrode 124 may be doped with impurities. Alternatively, the semiconductor layer 122 and the capacitor electrode 124 may be formed of an oxide semiconductor material.

[0080] A gate insulating layer 130 of an insulating material and a gate electrode 132 of a second conductive material such as metal are sequentially formed on the semiconductor layer 122. The gate insulating layer 130 and the gate electrode 132 are disposed corresponding to the center of the semiconductor layer 122.

[0081] The gate insulating layer 130 may be made of, for example, silicon oxide (SiO 2 ) or silicon nitride (SiN x ) or other inorganic insulating materials. When the semiconductor layer 122 is made of an oxide semiconductor material, it is preferred that the gate insulating layer 130 be made of silicon oxide (SiO 2 Alternatively, when the semiconductor layer 122 is made of polysilicon, the gate insulating layer 130 may be made of, for example, silicon oxide (SiO 2 ) or silicon nitride (SiN x )form.

[0082] The gate electrode 132 may be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof, and may have a single-layer structure or a multi-layer structure. For example, the gate electrode 132 may have a double-layer structure including a lower layer of a molybdenum-titanium alloy (MoTi) and an upper layer of copper (Cu), and the upper layer may have a thickness thicker than the lower layer.

[0083] As shown in the figure, the gate insulating layer 130 may be patterned to have the same shape as the gate electrode 132. At this time, the width of the gate insulating layer 130 may be greater than the width of the gate electrode 132, and thus the edge of the top surface of the gate insulating layer 130 may be exposed. Alternatively, the width of the gate insulating layer 130 may be the same as the width of the gate electrode 132.

[0084] Alternatively, the gate insulating layer 130 may not be patterned but may be formed substantially over the entire surface of the substrate 100 .

[0085] In addition, a gate line (not shown) may be further formed of the same material on the same layer as the gate electrode 132 .

[0086] An interlayer insulating layer 140 made of an insulating material is formed on the gate electrode 132 substantially over the entire surface of the substrate 100. The interlayer insulating layer 140 may be made of, for example, silicon oxide (SiO 2 ) or silicon nitride (SiN x Alternatively, the interlayer insulating layer 140 may be formed of an organic insulating material such as optical acrylic or benzocyclobutene.

[0087] The interlayer insulating layer 140 has a first contact hole 140a, a second contact hole 140b, a third contact hole 140c, and a fourth contact hole 140d. The first contact hole 140a and the second contact hole 140b expose both ends of the semiconductor layer 122. The third contact hole 140c partially exposes the top surface of the light shielding pattern 112 and is located in the buffer hole 120a. Alternatively, the buffer hole 120a may be omitted, and the third contact hole 140c may be formed in the buffer layer 120 and in the interlayer insulating layer 140 to partially expose the top surface of the light shielding pattern 112. The fourth contact hole 140d is formed in the buffer layer 120 and the interlayer insulating layer 140 to partially expose the top surface of the first auxiliary electrode 114.

[0088] A source electrode 142, a drain electrode 144, and a second auxiliary electrode 146 made of a third conductive material such as a metal are formed on the interlayer insulating layer 140. The source electrode 142, the drain electrode 144, and the second auxiliary electrode 146 may be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof, and may have a single-layer structure or a multi-layer structure. For example, the source electrode 142, the drain electrode 144, and the second auxiliary electrode 146 may have a double-layer structure including a lower layer of a molybdenum-titanium alloy (MoTi) and an upper layer of copper (Cu), and the upper layer may have a thickness thicker than the lower layer. Alternatively, the source electrode 142, the drain electrode 144, and the second auxiliary electrode 146 may have a three-layer structure.

[0089] The source electrode 142 and the drain electrode 144 are separated from each other and the gate electrode 132 is located therebetween. The source electrode 142 and the drain electrode 144 contact both ends of the semiconductor layer 122 through the first contact hole 140a and the second contact hole 140b, respectively. In addition, the drain electrode 144 contacts the light shielding pattern 112 through the third contact hole 140c and overlaps with the capacitor electrode 124. The capacitor electrode 124 overlaps with the light shielding pattern 122 and the drain electrode 144, thereby forming a storage capacitor.

[0090] In addition, the second auxiliary electrode 146 contacts the first auxiliary electrode 114 through the fourth contact hole 140 d .

[0091] In addition, a data line (not shown) and a high voltage power line (not shown) may be further formed on the interlayer insulating layer 140 , and the data line and the high voltage power line may be made of a third conductive material.

[0092] The semiconductor layer 122 , the gate electrode 132 , the source electrode 142 , and the drain electrode 144 form a thin film transistor T. The thin film transistor T has a coplanar structure in which the gate electrode 132 and the source electrode 142 and the drain electrode 144 are located on the same side with respect to the semiconductor layer 122 .

[0093] Alternatively, the thin film transistor T may have an inverse staggered structure in which the gate electrode and the source electrode and the drain electrode are located on different sides of the semiconductor layer. That is, the gate electrode may be arranged below the semiconductor layer, and the source electrode and the drain electrode may be arranged above the semiconductor layer. In this case, the semiconductor layer may be formed of an oxide semiconductor or amorphous silicon.

[0094] The thin film transistor T corresponds to Figure 1 A driving thin film transistor T2 may be formed on the substrate 100, and a thin film transistor having the same structure as the driving thin film transistor T may be further formed on the substrate 100. Figure 1 The gate electrode 132 of the driving thin film transistor T may be connected to the drain electrode of the switching thin film transistor, and the source electrode 142 of the driving thin film transistor T may be connected to the high voltage power line. In addition, the gate electrode and the source electrode of the switching thin film transistor may be connected to the gate line and the data line, respectively.

[0095] A passivation layer 150 of insulating material is formed on the source electrode 142, the drain electrode 144 and the second auxiliary electrode 146 substantially over the entire surface of the substrate 100. The passivation layer 150 may be made of a material such as silicon oxide (SiO 2 ) or silicon nitride (SiN x ) or other inorganic insulating materials.

[0096] Next, a capping layer 155 of an insulating material is formed on the passivation layer 150 substantially over the entire surface of the substrate 100. The capping layer 155 may be formed of an organic insulating material such as optical acrylic or benzocyclobutene. The capping layer 155 may eliminate a level difference due to a lower layer and have a substantially flat top surface.

[0097] Here, one of the passivation layer 150 and the capping layer 155 may be omitted. For example, the passivation layer 150 may be omitted, but is not limited thereto.

[0098] The passivation layer 150 and the capping layer 155 have a drain contact hole 155a exposing the drain electrode 144. In addition, the passivation layer 150 and the capping layer 155 have a fifth contact hole 155b exposing the second auxiliary electrode 146.

[0099] A first electrode 160 formed of a conductive material is formed on the capping layer 155 in the emission area EA. The first electrode 160 contacts the drain electrode 144 through the drain contact hole 155a.

[0100] The first electrode 160 includes a first layer 160a, a second layer 160b and a third layer 160c. Here, the second layer 160b is disposed between the first layer 160a and the third layer 160, and the first layer 160a is disposed between the second layer 160b and the substrate 100, more specifically, between the second layer 160b and the cover layer 155.

[0101] The first layer 160a is formed to improve adhesion between the second layer 160b and the capping layer 155. The first layer 160a may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto. The first layer 160a may be omitted.

[0102] The second layer 160b is formed of a metal material having a relatively high reflectivity. For example, the second layer 160b may be formed of silver (Ag), aluminum (Al), or molybdenum (Mo).

[0103] The third layer 160c is formed of a conductive material having a relatively high work function. For example, the third layer 160c may be formed of a transparent conductive material such as ITO or IZO. Here, the work function of the third layer 160c is higher than that of the second layer 160b.

[0104] The thickness of the second layer 160b may be greater than the thickness of the third layer 160c. For example, the thickness of the second layer 160b may be 80nm to 100nm, and the thickness of the third layer 160c may be 10nm to 80nm. However, the present disclosure is not limited thereto. The thickness of the first layer 160a may be less than the thickness of the second layer 160b and may be less than or equal to the thickness of the third layer 160c. For example, the thickness of the first layer 160a may be 10nm, but is not limited thereto.

[0105] In addition, the first connection pattern 162 is formed on the cover layer 155 between the emission area EA and the transparent area TA and is formed of the same material as the first electrode 160. Therefore, the first connection pattern 162 may include a first layer 162a, a second layer 162b, and a third layer 162c. At this time, the second layer 162b is disposed between the first layer 162a and the third layer 162c, and the first layer 162a is disposed between the second layer 162b and the substrate 100, more specifically, between the second layer 162b and the cover layer 155. The first connection pattern 162 contacts the second auxiliary electrode 146 through the fifth contact hole 155b.

[0106] In addition, the second connection pattern 164 is formed on the capping layer 155 in the transparent area TA. The second connection pattern 164 extends into the area between the emission area EA and the transparent area TA, overlapping and covering the first connection pattern 162. At this time, the second connection pattern 164 may overlap and cover at least a portion of the first connection pattern 162.

[0107] The second connection pattern 164 contacts the top and side surfaces of the first connection pattern 162. More specifically, the second connection pattern 164 contacts the top surface of the third layer 162c of the first connection pattern 162 and the side surfaces of the first, second and third layers 162a, 162b and 162c of the first connection pattern 162.

[0108] The second connection patterns 164 are advantageously formed of a transparent conductive material such as ITO or IZO.

[0109] A bank 170 of an insulating material is formed on the first electrode 160, the first connection pattern 162, and the second connection pattern 164. The bank 170 overlaps and covers an edge of each of the first electrode 160, the first connection pattern 162, and the second connection pattern 164.

[0110] The bank 170 has a first opening 170a corresponding to the emission area EA, a second opening 170c corresponding to the transparent area TA, and an auxiliary contact hole 170b disposed in a region between the emission area EA and the transparent area TA.

[0111] The first opening 170 a exposes a central portion of the first electrode 160 , the second opening 170 c exposes a central portion of the second connection pattern 164 , and the auxiliary contact hole 170 b exposes a portion of the first connection pattern 162 .

[0112] The bank 170 includes a first bank 172 having hydrophilicity and a second bank 174 having hydrophobicity on the first bank 172. The second bank 174 has a narrower width than the first bank 172 and exposes an edge of a top surface of the first bank 172. In addition, the second bank 174 may have a thickness thicker than the first bank 172.

[0113] The first bank 172 may be formed of a hydrophilic material, such as silicon oxide (SiO 2 ) or silicon nitride (SiN x Alternatively, the first bank 172 may be formed of polyimide.

[0114] In addition, at least the top surface of the second bank 174 is hydrophobic, and the side surface of the second bank 174 may be hydrophobic or hydrophilic. The second bank 174 may be formed of an organic insulating material having hydrophobicity. Alternatively, the second bank 174 may be formed of an organic insulating material having hydrophilicity and subjected to a hydrophobic treatment.

[0115] In addition, Figure 3In the embodiment, the first bank 172 and the second bank 174 are formed of different materials and are separated from each other. However, the hydrophilic first bank 172 and the hydrophobic second bank 174 may be formed of the same material and formed integrally. For example, an organic material layer may be formed substantially over the entire surface of the substrate 100, the organic material layer may be exposed through a half-tone mask including a light-transmitting portion, a light-shielding portion, and a semi-light-transmitting portion, and the organic material layer may be patterned to form the hydrophilic first bank 172 and the hydrophobic second bank 174.

[0116] Alternatively, the first bank 172 may be omitted.

[0117] The light emitting layer 180 is formed on the first electrode 160 exposed through the first opening 170a. The light emitting layer 180 may include a first charge auxiliary layer 182, a light emitting material layer 184, and a second charge auxiliary layer 186 sequentially located above the first electrode 160.

[0118] The light-emitting material layer 184 may be formed of any one of a red light-emitting material, a green light-emitting material, and a blue light-emitting material corresponding to the red sub-pixel, the green sub-pixel, and the blue sub-pixel, respectively. For example, the light-emitting material layer 184 may be formed of a blue light-emitting material. The light-emitting material may be an organic light-emitting material such as a phosphorescent compound or a fluorescent compound, or may be an inorganic light-emitting material such as a quantum dot.

[0119] The first charge auxiliary layer 182 may be a hole auxiliary layer, and the hole auxiliary layer may include at least one of a hole injection layer (HIL) and a hole transport layer (HTL). In addition, the second charge auxiliary layer 186 may be an electron auxiliary layer, and the electron auxiliary layer may include at least one of an electron injection layer (EIL) and an electron transport layer (ETL). However, the present disclosure is not limited thereto.

[0120] Here, each of the first charge auxiliary layer 182 and the light-emitting material layer 184 is formed by a solution process. Thus, the process can be simplified and a display device with a large size and high resolution can be provided. Spin coating, inkjet printing or screen printing can be used as a solution process, but the present disclosure is not limited thereto. When the solution dries, the solvent drying speed in the area near the second bank 174 is different from the solvent drying speed in other areas. That is, the solvent drying speed in the area near the second bank 174 is faster than the solvent drying speed in other areas. Therefore, the height of each of the first charge auxiliary layer 182 and the light-emitting material layer 184 in the area near the second bank 174 can increase as it approaches the second bank 174.

[0121] In addition, the second charge auxiliary layer 186 may be formed by a thermal evaporation process. Therefore, the second charge auxiliary layer 186 may be formed substantially over the entire surface of the substrate 100. That is, the second charge auxiliary layer 186 may be formed on the top and side surfaces of the second bank 174, and may also be formed on the first connection pattern 162 and the second connection pattern 164. The second charge auxiliary layer 186 is in contact with the top and side surfaces of the second bank 174, and is in contact with the second connection pattern 164.

[0122] Alternatively, the second charge assisting layer 186 may be formed by a solution process. In this case, similar to the first charge assisting layer 182 and the light emitting material layer 184, the second charge assisting layer 186 may be formed in the first opening 170a, and the height of the second charge assisting layer 186 in the region near the second bank 174 may increase as it approaches the second bank 174.

[0123] A second electrode 190 of a conductive material having a relatively low work function is formed on the light emitting layer 180, the second bank 174, the first connection pattern 162, and the second connection pattern 164 substantially over the entire surface of the substrate 100. The second electrode 190 may be formed of aluminum (Al), magnesium (Mg), silver (Ag), or an alloy thereof. At this time, the second electrode 190 has a relatively thin thickness so that light from the light emitting layer 180 can be transmitted. For example, the second electrode 190 may have a thickness of 5 nm to 10 nm.

[0124] Alternatively, the second electrode 190 may be formed of a transparent conductive material such as indium gallium oxide (IGO) or IZO, but is not limited thereto.

[0125] The second electrode 190 is electrically connected to the first connection pattern 162 through the auxiliary contact hole 170b. At this time, the second electrode 190 may be electrically connected to the first connection pattern 162 through the second connection pattern 164 formed on the first connection pattern 162.

[0126] In addition, the second electrode 190 is electrically connected to the second connection pattern 164 through the second opening 170c. Therefore, the electrical connection area of ​​the second electrode 190 increases, so that the contact characteristics between the second electrode 190 and the first connection pattern 162 can be improved.

[0127] As described above, when the second charge auxiliary layer 186 is formed by a solution process, the second electrode 190 may contact the second connection pattern 164 .

[0128] The first electrode 160, the light emitting layer 180, and the second electrode 190 constitute a light emitting diode De. The first electrode 160 may be used as an anode, and the second electrode 190 may be used as a cathode, but are not limited thereto.

[0129] As described above, the transparent display device 1000 according to the embodiment of the present disclosure may be a top emission type in which light from the light emitting layer 180 of the light emitting diode De is output in a direction opposite to the substrate 100, that is, output to the outside through the second electrode 190. The top emission type display device may have a larger light emitting area than a bottom emission type display device of the same size, thereby improving brightness and reducing power consumption.

[0130] At this time, the light emitting diode De of each sub-pixel may have an element thickness for a microcavity effect corresponding to the wavelength of emitted light, thereby improving light efficiency.

[0131] In addition, a protective layer and / or an encapsulation layer (not shown) may be formed on the second electrode 190 substantially over the entire surface of the substrate 110 to block moisture or oxygen introduced from the outside, thereby protecting the light emitting diode De.

[0132] In addition, a capping layer (not shown) may be formed on the second electrode 190 substantially over the entire surface of the substrate 100. The capping layer may be formed of an insulating material having a relatively high refractive index. The wavelength of light propagating along the capping layer may be amplified by surface plasmon resonance, thereby increasing the peak intensity, thereby improving the light efficiency of the top emission type electroluminescent display device. For example, the capping layer may be formed as a single layer of an organic layer or an inorganic layer, or as an organic / inorganic stacked layer.

[0133] As described above, in the transparent display device 1000 according to the first embodiment of the present disclosure, the pixel P includes the emission area EA and the transparent area TA, so that the surrounding environment information such as the background can be displayed through the transparent area TA while the image information is displayed through the emission area EA.

[0134] Furthermore, in the transparent display device 1000 according to the first embodiment of the present disclosure, a portion of the light emitting layer 180 is formed by a solution process, a fine metal mask may be omitted, thereby reducing manufacturing costs, and a display device having a large size and high resolution may be realized.

[0135] In addition, the transparent display device 1000 according to the first embodiment of the present disclosure is implemented as a top emission type, thereby improving brightness and reducing power consumption. Here, since the second electrode 190 is formed to have a relatively thin thickness so as to transmit light, the resistance of the second electrode 190 may increase, but the resistance of the second electrode 190 may be reduced by connecting the second electrode 190 to the first auxiliary electrode 114 and the second auxiliary electrode 146 via the first connection pattern 162. At this time, the second electrode 190 is also electrically connected to the second connection pattern 164 of the transparent area TA, so that the electrical contact characteristics between the second electrode 190 and the first connection pattern 162 can be improved.

[0136] Will refer to Figures 4A to 4G A method of manufacturing the transparent display device 1000 according to the first embodiment of the present disclosure is described in detail.

[0137] Figures 4A to 4G is a cross-sectional view schematically illustrating a manufacturing process of the transparent display device according to the first embodiment of the present disclosure.

[0138] exist Figure 4A In the present invention, a light shielding pattern 112 and a first auxiliary electrode 114 are formed on a substrate 100 defining a pixel P including an emission area EA and a transparent area TA by depositing a first conductive material and patterning the first conductive material through a first mask process.

[0139] Next, a buffer layer 120 is formed on the light shielding pattern 112 and the first auxiliary electrode 114 by depositing an inorganic insulating material substantially over the entire surface of the substrate 100 , and the buffer layer 120 is patterned by a second mask process to form a buffer hole 120 a partially exposing an upper surface of the light shielding pattern 112 .

[0140] Then, by depositing a semiconductor material and patterning the semiconductor material through a third mask process, a semiconductor layer 122 and a capacitor electrode 124 are formed on the buffer layer 120. The semiconductor layer 122 and the capacitor electrode 124 are separated from each other above the light shielding pattern 112.

[0141] The semiconductor material may be polysilicon, in which case both ends of the semiconductor layer 122 and the capacitor electrode 124 may be doped with impurities later. Alternatively, the semiconductor material may be formed of an oxide semiconductor material.

[0142] The gate insulating layer 130 and the gate electrode 132 are formed by sequentially depositing an inorganic insulating material and a second conductive material on the semiconductor layer 122 and the capacitor electrode 124 and patterning them through a fourth mask process. The gate insulating layer 130 and the gate electrode 132 are disposed corresponding to the center of the semiconductor layer 122.

[0143] Then, an interlayer insulating layer 140 is formed on the gate electrode 132 and the capacitor electrode 124 by depositing an inorganic insulating material or applying an organic insulating material substantially over the entire surface of the substrate 100, and the interlayer insulating layer 140 is patterned by a fifth mask process to form a first contact hole 140a, a second contact hole 140b, a third contact hole 140c, and a fourth contact hole 140d. At this time, the buffer layer 120 may also be selectively removed.

[0144] The first contact hole 140a and the second contact hole 140b expose both ends of the semiconductor layer 122. The third contact hole 140c corresponds to the buffer hole 120a and partially exposes the upper surface of the light shielding pattern 112. Here, the buffer hole 120a may be omitted, and the third contact hole 140c may be formed in the buffer layer 120 and the interlayer insulating layer 140 to partially expose the upper surface of the light shielding pattern 112. In this case, the second mask process is omitted. In addition, the fourth contact hole 140d is formed in the buffer layer 120 and the interlayer insulating layer 140 to partially expose the upper surface of the first auxiliary electrode 114.

[0145] Next, a source electrode 142 , a drain electrode 144 , and a second auxiliary electrode 146 are formed on the interlayer insulating layer 140 by depositing a third conductive material and patterning the third conductive material through a sixth mask process.

[0146] The source electrode 142 and the drain electrode 144 contact both ends of the semiconductor layer 122 through the first contact hole 140a and the second contact hole 140b, respectively. In addition, the drain electrode 144 contacts the light shielding pattern 112 through the third contact hole 140c and overlaps the capacitor electrode 124.

[0147] In addition, the second auxiliary electrode 146 contacts the first auxiliary electrode 114 through the fourth contact hole 140 d .

[0148] The semiconductor layer 122 , the gate electrode 132 , the source electrode 142 , and the drain electrode 144 form a thin film transistor T. The capacitor electrode 124 overlaps the light shielding pattern 112 and the drain electrode 144 to form a storage capacitor.

[0149] Then, in Figure 4B In the embodiment, a passivation layer 150 is formed on the source electrode 142, the drain electrode 144 and the second auxiliary electrode 146 by depositing an inorganic insulating material, and a capping layer 155 is formed on the passivation layer 150 by applying an organic insulating material. Then, the passivation layer 150 and the capping layer 155 are patterned by a seventh mask process to form a drain contact hole 155a and a fifth contact hole 155b.

[0150] The drain contact hole 155 a partially exposes the drain electrode 144 , and the fifth contact hole 155 b exposes the second auxiliary electrode 146 .

[0151] Here, it is described that the passivation layer 150 and the capping layer 155 are patterned by the same mask process, but the passivation layer 150 and the capping layer 155 may be patterned by different mask processes. That is, after the passivation layer 150 is formed by depositing an inorganic insulating material and patterning the passivation layer 150 by a mask process, the capping layer 155 may be formed by applying an organic insulating material and patterning the capping layer 155 by another mask process.

[0152] Then, if Figure 4C As shown in FIG. 1 , a first electrode 160 and a first connection pattern 162 are formed on the capping layer 155 by sequentially depositing first, second, and third conductive layers (not shown) and patterning them through an eighth mask process.

[0153] Here, the first conductive layer and the third conductive layer may be formed of ITO or IZO, and the second conductive layer may be formed of silver (Ag), aluminum (Al), or molybdenum (Mo).

[0154] The first electrode 160 and the first connection pattern 162 include a first layer 160a and 162a, a second layer 160b and 162b, and a third layer 160c and 162c. The second layer 160b and 162b is disposed between the first layer 160a and 162a and the third layer 160c and 162c, and the first layer 160a and 162a is disposed between the second layer 160b and 162b and the capping layer 155.

[0155] The first electrode 160 is disposed in the emission area EA and contacts the drain electrode 144 through the drain contact hole 155a. In addition, the first connection pattern 162 is disposed between the emission area EA and the transparent area TA and contacts the second auxiliary electrode 146 through the fifth contact hole 155b.

[0156] Then, in Figure 4D In the embodiment, the second connection patterns 164 are formed in the transparent areas TA by depositing a transparent conductive material on the first electrodes 160 and the first connection patterns 162 and patterning the transparent conductive material through a ninth mask process.

[0157] The second connection patterns 164 extend into the region between the emission area EA and the transparent area TA, and overlap and cover the first connection patterns 162. The second connection patterns 164 may be formed of a transparent conductive material such as ITO or IZO.

[0158] Then, in Figure 4EIn the embodiment, an insulating material is deposited or applied and patterned by a mask process, and a bank 170 including a hydrophilic first bank 172 and a hydrophobic second bank 174 is formed on the first electrode 160 and the second connection pattern 164. At this time, a hydrophilic insulating material is deposited and patterned by a tenth mask process to form the first bank 172, and an organic insulating material with hydrophobicity is applied and patterned by an eleventh mask process, or an organic insulating material with hydrophilicity is applied, patterned by an eleventh mask process and subjected to a hydrophobic treatment to form the second bank 174.

[0159] Alternatively, the first bank 172 and the second bank 174 may be formed by a single mask process. For example, an organic insulating material is formed substantially over the entire surface of the substrate 100, the organic insulating material is exposed using a half-tone mask including a light-transmitting portion, a light-shielding portion, and a semi-light-transmitting portion, and the organic insulating material is patterned to form an integrated hydrophilic first bank 172 and a hydrophobic second bank 174 having different widths and thicknesses.

[0160] The bank 170 has a first opening 170 a corresponding to the emission area EA, a second opening 170 c corresponding to the transparent area TA, and an auxiliary contact hole 170 b disposed in a region between the emission area EA and the transparent area TA.

[0161] The first opening 170 a exposes a central portion of the first electrode 160 , the second opening 170 c exposes a central portion of the second connection pattern 164 , and the auxiliary contact hole 170 b exposes a portion of the first connection pattern 162 .

[0162] Then, in Figure 4F In the embodiment of the present invention, a first charge auxiliary layer 182 is formed on the first electrode 160 exposed by the bank 170 by dropping a first solution and drying it. At least one side surface of the first charge auxiliary layer 182 is surrounded by the second bank 174. When the first solution is dried, the solvent drying speed in the region adjacent to the second bank 174 is different from the solvent drying speed in other regions, and therefore, the height of the first charge auxiliary layer 182 in the region adjacent to the second bank 174 increases as it approaches the second bank 174. The first charge auxiliary layer 182 may be a hole injection layer (HIL) and / or a hole transport layer (HTL).

[0163] Then, by dropping the second solution and drying it, the light emitting material layer 184 is formed on the first charge assisting layer 182. At least one side surface of the light emitting material layer 184 is surrounded by the second bank 174. When the second solution is dried, the solvent drying speed in the region adjacent to the second bank 174 is different from the solvent drying speed in other regions, and therefore, the height of the light emitting material layer 184 in the region adjacent to the second bank 174 increases as it approaches the second bank 174.

[0164] Next, a second charge auxiliary layer 186 is formed on the light emitting material layer 184 by depositing an organic material and / or an inorganic material. The second charge auxiliary layer 186 is formed substantially over the entire surface of the substrate 100. Therefore, the second charge auxiliary layer 186 is also formed on the second bank 174, the first and second connection patterns 162 and 164 in the auxiliary contact hole 170b, and the second connection pattern 164 in the transparent area TA. The second charge auxiliary layer 186 may be an electron injection layer (EIL) and / or an electron transport layer (ETL).

[0165] The first charge assisting layer 182 , the light emitting material layer 184 , and the second charge assisting layer 186 constitute the light emitting layer 180 .

[0166] Then, in Figure 4G In the embodiment of the present invention, the second electrode 190 is formed on the second charge auxiliary layer 186 by depositing a conductive material such as metal. The second electrode 190 is formed substantially over the entire surface of the substrate 100.

[0167] The second electrode 190 is electrically connected to the first connection pattern 162 through the auxiliary contact hole 170b. In addition, the second electrode 190 is electrically connected to the second connection pattern 164 through the second opening 170c.

[0168] The first electrode 160, the light emitting layer 180, and the second electrode 190 constitute a light emitting diode De. The first electrode 160 may be used as an anode, and the second electrode 190 may be used as a cathode.

[0169] As described above, in the transparent display device 1000 according to the first embodiment of the present disclosure, after the first electrode 160 and the first connection pattern 162 are formed, the second connection pattern 164 is formed in the transparent area TA to be directly connected to the first connection pattern 162, and the second electrode 190 is electrically connected to the first auxiliary electrode 114 and the second auxiliary electrode 146 through the first connection pattern 162 and the second connection pattern 164. Therefore, the electrical connection area of ​​the second electrode 190 is increased while the resistance of the second electrode 190 is reduced, so that the electrical contact characteristics between the second electrode 190 and the first connection pattern 162 can be improved.

[0170] In addition, although the second charge auxiliary layer 186 disposed between the second electrode 190 and the first connection pattern 162 may reduce electrical characteristics, the second electrode 190 is electrically connected to the second connection pattern 164 having a relatively large transparent area TA, thereby minimizing the reduction in electrical contact characteristics between the second electrode 190 and the first connection pattern 162.

[0171] The manufacturing method of the transparent display device 1000 according to the first embodiment of the present disclosure has an advantage in that the manufacturing method can be implemented without changing the existing process because only a step for forming the second connection pattern 164 is added.

[0172] Figure 5 1 is a schematic cross-sectional view of a transparent display device according to a second embodiment of the present disclosure. The transparent display device of the second embodiment has the same structure as the transparent display device of the first embodiment except for the second connection pattern. The same reference numerals are given to the same parts as those of the first embodiment, and the description of the same parts will be reduced or omitted.

[0173] like Figure 5 As shown in , in the transparent display device 2000 according to the second embodiment of the present disclosure, the first electrode 160 , the first connection pattern 162 , and the second connection pattern 264 are formed on the cover layer 155 .

[0174] The first electrode 160 is disposed in the emission area EA, the second connection pattern 264 is disposed in the transparent area TA, and the first connection pattern 162 is disposed between the emission area EA and the transparent area TA.

[0175] The first electrode 160 and the first connection pattern 162 include a first layer 160a and 162a, a second layer 160b and 162b, and a third layer 160c and 162c. The second layer 160b and 162b is disposed between the first layer 160a and 162a and the third layer 160c and 162c, and the first layer 160a and 162a is disposed between the second layer 160b and 162b and the substrate 100, more specifically, between the second layer 160b and 162b and the cover layer 155. The first layer 160a and 162a may be omitted.

[0176] The first layers 160a and 162a and the third layers 160c and 162c may be formed of a transparent conductive material having a relatively high work function such as ITO or IZO. The second layers 160b and 162b may be formed of a metal material having a relatively high reflectivity such as aluminum (Al) or silver (Ag). Alternatively, the second layers 160b and 162b may be formed of molybdenum (Mo).

[0177] The second connection pattern 264 is directly connected to the first connection pattern 162 and is in direct contact with the first connection pattern 162. The second connection pattern 264 extends from the third layer 162c of the first connection pattern 162. That is, the second connection pattern 264 may be integrally formed with the third layer 162c of the first connection pattern 162, and may be in contact with side surfaces of the first layer 162a and the second layer 162b of the first connection pattern 162.

[0178] A bank 170 of an insulating material is formed on the first electrode 160, the first connection pattern 162, and the second connection pattern 264. The bank 170 overlaps and covers an edge of each of the first electrode 160, the first connection pattern 162, and the second connection pattern 264.

[0179] The bank 170 has a first opening 170 a corresponding to the emission area EA, a second opening 170 c corresponding to the transparent area TA, and an auxiliary contact hole 170 b disposed in a region between the emission area EA and the transparent area TA.

[0180] The first opening 170 a exposes a central portion of the first electrode 160 , the second opening 170 c exposes a central portion of the second connection pattern 264 , and the auxiliary contact hole 170 b exposes a portion of the first connection pattern 162 .

[0181] The bank 170 includes a first bank 172 having hydrophilicity and a second bank 174 having hydrophobicity on the first bank 172 .

[0182] The light emitting layer 180 is formed on the first electrode 160 exposed by the first opening 170a. The light emitting layer 180 may include a first charge auxiliary layer 182, a light emitting material layer 184, and a second charge auxiliary layer 186 sequentially located above the first electrode 160.

[0183] Here, each of the first charge auxiliary layer 182 and the light emitting material layer 184 is formed by a solution process. Due to the difference in drying speed according to the position, the height of each of the first charge auxiliary layer 182 and the light emitting material layer 184 in the region adjacent to the second bank 174 may increase as it approaches the second bank 174.

[0184] On the other hand, the second charge auxiliary layer 186 is formed substantially over the entire surface of the substrate 100 by a thermal evaporation process. The second charge auxiliary layer 186 contacts the top and side surfaces of the second bank 174 and also contacts the first and second connection patterns 162 and 264.

[0185] Alternatively, the second charge assisting layer 186 may be formed only in the first opening 170 a by a solution process.

[0186] A second electrode 190 of a conductive material having a relatively low work function is formed on the light emitting layer 180, the second bank 174, the first connection pattern 162, and the second connection pattern 264 substantially over the entire surface of the substrate 100. The second electrode 190 may be formed of aluminum (Al), magnesium (Mg), silver (Ag), or an alloy thereof. At this time, the second electrode 190 has a relatively thin thickness so that light from the light emitting layer 180 can be transmitted. Alternatively, the second electrode 190 may be formed of a transparent conductive material such as IGO or IZO.

[0187] The second electrode 190 is electrically connected to the first connection pattern 162 through the auxiliary contact hole 170b. In addition, the second electrode 190 is electrically connected to the second connection pattern 264 through the second opening 170c. Therefore, the electrical connection area of ​​the second electrode 190 increases, thereby improving the electrical contact characteristics between the second electrode 190 and the first connection pattern 162.

[0188] The first electrode 160 , the light emitting layer 180 , and the second electrode 190 constitute a light emitting diode De.

[0189] The manufacturing method of the transparent display device 2000 according to the second embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. Figure 4C and Figure 4D In addition to the steps of forming the first electrode, the first connection pattern and the second connection pattern, the manufacturing method of the transparent display device 200 according to the second embodiment includes: FIG. 4A to FIG. 4G The same steps as the first embodiment are performed, and illustration and description of the same steps will be omitted.

[0190] Fig. 6A and Figure 6B is a cross-sectional view schematically illustrating a manufacturing process of a transparent display device according to a second embodiment of the present disclosure, and shows steps of forming a first electrode, a first connection pattern, and a second connection pattern.

[0191] exist Fig. 6A In the embodiment, the first electrode 160 and the first connection pattern 162 are formed on the capping layer 155 by sequentially depositing the first conductive layer and the second conductive layer (not shown) and patterning them by a mask process.

[0192] The first layer 160a and the second layer 160b of the first electrode 160 are disposed in the emission area EA, and the first layer 160a contacts the drain electrode 144 through the drain contact hole 155a. In addition, the first layer 162a and the second layer 162b of the first connection pattern 162 are disposed between the emission area EA and the transparent area TA, and the first layer 162a contacts the second auxiliary electrode 146 through the fifth contact hole 155b.

[0193] Then, in Figure 6B In the embodiment, a third layer 160c of the first electrode 160, a third layer 162c of the first connection pattern 162, and a second connection pattern 264 are formed by depositing a third conductive layer (not shown) on the second layer 160b of the first electrode 160 and the second layer 162b of the first connection pattern 162 and patterning the third conductive layer through a mask process.

[0194] Therefore, the first electrode 160 including the first layer 160a, the second layer 160b and the third layer 160c is set in the light-emitting area EA, the first connection pattern 162 including the first layer 162a, the second layer 162b and the third layer 162c is set between the light-emitting area EA and the transparent area TA, and the second connection pattern 264 is set in the transparent area TA.

[0195] Here, the second connection pattern 264 is integrally formed with the third layer 162 c of the first connection pattern 162 , and contacts at least one side surface of the first layer 162 a and the second layer 162 b of the first connection pattern 162 .

[0196] Then, if Figures 4E to 4G As shown in FIG. 1 , the bank 170 , the light emitting layer 180 and the second electrode 190 are sequentially formed on the first electrode 160 , the first connection pattern 162 and the second connection pattern 264 .

[0197] As described above, in the method for manufacturing the transparent display device 2000 according to the second embodiment of the present disclosure, when the third layer 160c of the first electrode 160 and the third layer 162c of the first connection pattern 162 are formed, the second connection pattern 264 connected to the first connection pattern 162 is formed in the transparent area TA, and the second electrode 190 is electrically connected to the first connection pattern 162 and the second connection pattern 264. Therefore, the electrical connection area of ​​the second electrode 190 is increased, so that the electrical contact characteristics between the second electrode 190 and the first connection pattern 162 can be improved.

[0198] Compared with the first embodiment, the method for manufacturing the transparent display device 2000 according to the second embodiment of the present disclosure has an advantage in that manufacturing processes and materials can be reduced.

[0199] Figure 7 is a schematic cross-sectional view of a transparent display device according to a third embodiment of the present disclosure. The transparent display device of the third embodiment has the same structure as the transparent display device of the first embodiment except for the second connection pattern. The same reference numerals are given to the same parts as those of the first embodiment, and the description of the same parts will be reduced or omitted.

[0200] like Figure 7As shown in , in the transparent display device 3000 according to the third embodiment of the present disclosure, the first electrode 160 , the first connection pattern 162 , and the second connection pattern 364 are formed on the cover layer 155 .

[0201] The first electrode 160 is disposed in the emission area EA, the second connection pattern 364 is disposed in the transparent area TA, and the first connection pattern 162 is disposed between the emission area EA and the transparent area TA.

[0202] The first electrode 160 and the first connection pattern 162 include a first layer 160a and 162a, a second layer 160b and 162b, and a third layer 160c and 162c. The second layer 160b and 162b is disposed between the first layer 160a and 162a and the third layer 160c and 162c, and the first layer 160a and 162a is disposed between the second layer 160b and 162b and the substrate 100, more specifically, between the second layer 160b and 162b and the cover layer 155.

[0203] The first layers 160a and 162a and the third layers 160c and 162c may be formed of a transparent conductive material having a relatively high work function such as ITO or IZO. The second layers 160b and 162b may be formed of a metal material having a relatively high reflectivity such as aluminum (Al) or silver (Ag). Alternatively, the second layers 160b and 162b may be formed of molybdenum (Mo).

[0204] The second connection pattern 364 is directly connected to and in direct contact with the first connection pattern 162. The second connection pattern 364 extends from the first layer 162a of the first connection pattern 162. That is, the second connection pattern 364 may be integrally formed with the first layer 162a of the first connection pattern 162.

[0205] A bank 170 of an insulating material is formed on the first electrode 160, the first connection pattern 162, and the second connection pattern 364. The bank 170 overlaps and covers an edge of each of the first electrode 160, the first connection pattern 162, and the second connection pattern 364.

[0206] The bank 170 has a first opening 170 a corresponding to the emission area EA, a second opening 170 c corresponding to the transparent area TA, and an auxiliary contact hole 170 b disposed in a region between the emission area EA and the transparent area TA.

[0207] The first opening 170 a exposes a central portion of the first electrode 160 , the second opening 170 c exposes a central portion of the second connection pattern 364 , and the auxiliary contact hole 170 b exposes a portion of the first connection pattern 162 .

[0208] The bank 170 includes a first bank 172 having hydrophilicity and a second bank 174 having hydrophobicity on the first bank 172 .

[0209] The light emitting layer 180 is formed on the first electrode 160 exposed by the first opening 170a. The light emitting layer 180 may include a first charge auxiliary layer 182, a light emitting material layer 184, and a second charge auxiliary layer 186 sequentially located above the first electrode 160.

[0210] Here, each of the first charge auxiliary layer 182 and the light emitting material layer 184 is formed by a solution process. Due to the difference in drying speed according to the position, the height of each of the first charge auxiliary layer 182 and the light emitting material layer 184 in the region adjacent to the second bank 174 may increase as it approaches the second bank 174.

[0211] On the other hand, the second charge auxiliary layer 186 is formed substantially over the entire surface of the substrate 100 by a thermal evaporation process. The second charge auxiliary layer 186 contacts the top and side surfaces of the second bank 174 and also contacts the first and second connection patterns 162 and 364.

[0212] Alternatively, the second charge assisting layer 186 may be formed only in the first opening 170 a by a solution process.

[0213] A second electrode 190 of a conductive material having a relatively low work function is formed on the light emitting layer 180, the second bank 174, the first connection pattern 162, and the second connection pattern 364 substantially over the entire surface of the substrate 100. The second electrode 190 may be formed of aluminum (Al), magnesium (Mg), silver (Ag), or an alloy thereof. At this time, the second electrode 190 has a relatively thin thickness so that light from the light emitting layer 180 can be transmitted. Alternatively, the second electrode 190 may be formed of a transparent conductive material such as IGO or IZO.

[0214] The second electrode 190 is electrically connected to the first connection pattern 162 through the auxiliary contact hole 170b. In addition, the second electrode 190 is electrically connected to the second connection pattern 364 through the second opening 170c. Therefore, the electrical connection area of ​​the second electrode 190 increases, thereby improving the electrical contact characteristics between the second electrode 190 and the first connection pattern 162.

[0215] The first electrode 160 , the light emitting layer 180 , and the second electrode 190 constitute a light emitting diode De.

[0216] The method for manufacturing the transparent display device 3000 according to the third embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. Figure 4C and 4DIn addition to the steps of forming the first electrode, the first connection pattern and the second connection pattern, the manufacturing method of the transparent display device 3000 according to the third embodiment includes: Figures 4A to 4G The same steps as the first embodiment are performed, and illustration and description of the same steps will be omitted.

[0217] Fig. 8A and 8B is a cross-sectional view schematically illustrating a manufacturing process of a transparent display device according to a third embodiment of the present disclosure, and shows steps of forming a first electrode, a first connection pattern, and a second connection pattern.

[0218] exist Fig. 8A In the embodiment, a first layer 160a of the first electrode 160, a first layer 162a of the first connection pattern 162, and a second connection pattern 364 are formed on the capping layer 155 by depositing a first conductive layer (not shown) and patterning it through a mask process.

[0219] The first layer 160a of the first electrode 160 is disposed in the emission area EA and contacts the drain electrode 144 through the drain contact hole 155a. In addition, the first layer 162a of the first connection pattern 162 is disposed between the emission area EA and the transparent area TA and contacts the second auxiliary electrode 146 through the fifth contact hole 155b.

[0220] In addition, the second connection pattern 364 is disposed in the transparent area TA, and is connected to the first layer 162 a of the first connection pattern 162 to be integrally formed.

[0221] Then, in Figure 8B In the process, the second layer 160b and the third layer 160c of the first electrode 160 and the second layer 162b and the third layer 162c of the first connection pattern 162 are formed on the first layer 160a of the first electrode 160 and the first layer 162a of the first connection pattern 162 by sequentially depositing the second conductive layer and the third conductive layer (not shown) and patterning them by a mask process.

[0222] Therefore, the first electrode 160 including the first layer 160a, the second layer 160b and the third layer 160c is disposed in the emission area EA, and the first connection pattern 162 including the first layer 162a, the second layer 162b and the third layer 162c is disposed between the emission area EA and the transparent area TA.

[0223] Then, if Figures 4E to 4G As shown in FIG. 1 , the bank 170 , the light emitting layer 180 and the second electrode 190 are sequentially formed on the first electrode 160 , the first connection pattern 162 and the second connection pattern 364 .

[0224] As described above, in the method for manufacturing the transparent display device 3000 according to the third embodiment of the present disclosure, when the first layer 160a of the first electrode 160 and the first layer 162a of the first connection pattern 162 are formed, the second connection pattern 364 connected to the first connection pattern 162 is formed in the transparent area TA, and the second electrode 190 is electrically connected to the first connection pattern 162 and the second connection pattern 364. Therefore, the electrical connection area of ​​the second electrode 190 increases, so that the electrical contact characteristics between the second electrode 190 and the first connection pattern 162 can be improved.

[0225] Compared with the first embodiment, the method for manufacturing the transparent display device 3000 according to the third embodiment of the present disclosure has an advantage in that manufacturing processes and materials can be reduced.

[0226] In addition, in the third embodiment, the first electrode 160 , the first connection pattern 162 , and the second connection pattern 364 are formed by three mask processes, but are not limited thereto.

[0227] Alternatively, the first electrode 160 , the first connection pattern 162 , and the second connection pattern 364 may be formed by one mask process using a half-tone mask including a light-transmitting portion, a light-shielding portion, and a semi-light-transmitting portion.

[0228] Fig. 9 1 is a schematic plan view of a transparent display device according to a fourth embodiment of the present disclosure, and mainly shows a bank structure. The transparent display device of the fourth embodiment has substantially the same structure as the transparent display device of the first embodiment, except for the arrangement of the first auxiliary electrode. The same reference numerals are given to the same parts as those of the first embodiment, and the description of the same parts will be reduced or omitted.

[0229] like Fig. 9 As shown in FIG. 4 , in the transparent display device 4000 according to the fourth embodiment of the present disclosure, one pixel P includes a light-emitting area EA and a transparent area TA. The light-emitting area EA includes a first light-emitting area EA1, a second light-emitting area EA2, and a third light-emitting area EA3 corresponding to a red sub-pixel, a green sub-pixel, and a blue sub-pixel, respectively.

[0230] The light emitting area EA and the transparent area TA are arranged along a first direction (e.g., a vertical direction), and the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 are arranged along a second direction (e.g., a horizontal direction) perpendicular to the first direction. Here, the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 may have different sizes. In this case, the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 may have the same length along the first direction and different widths along the second direction, but are not limited thereto.

[0231] The bank 170 is formed between the first, second and third emission areas EA1, EA2 and EA3 and between the emission area EA and the transparent area TA. The bank 170 has a first opening 170a corresponding to each of the first, second and third emission areas EA1, EA2 and EA3 and a second opening 170c corresponding to the transparent area TA.

[0232] The first and second auxiliary electrodes 414 and 146 and the first and second connection patterns 162 and 164 are formed under the bank 170 .

[0233] The first auxiliary electrode 414 may be provided in a line shape extending along the second direction, and may be provided between the emission area EA and the transparent area TA arranged along the first direction.

[0234] The second auxiliary electrode 146 is disposed between the emission area EA and the transparent area TA and partially overlaps the first auxiliary electrode 414. The second auxiliary electrode 146 is connected to the first auxiliary electrode 414 through the contact hole 140d.

[0235] In addition, the first connection pattern 162 is disposed between the emission area EA and the transparent area TA and partially overlaps the second auxiliary electrode 146. The bank 170 has an auxiliary contact hole 170b corresponding to the first connection pattern 162. The first connection pattern 162 is connected to the second auxiliary electrode 146 through a contact hole (not shown) below the auxiliary contact hole 170b.

[0236] The second connection pattern 164 is disposed corresponding to the transparent area TA and is exposed through the second opening 170c. The second connection pattern 164 is in direct contact with the first connection pattern 162. The second connection pattern 164 may overlap and cover the first connection pattern 162. Alternatively, the second connection pattern 164 may extend from the first connection pattern 162.

[0237] Will refer to Fig.10 A cross-sectional structure of a transparent display device 4000 according to a fourth embodiment of the present disclosure is described in detail.

[0238] Fig.10 is a schematic cross-sectional view of a transparent display device according to a fourth embodiment of the present disclosure, and corresponds to Fig. 9 In addition to the contact structure between the light emitting area and the transparent area, the transparent display device of the fourth embodiment has the same Figure 3 The transparent display device of the first embodiment shown in FIG. Components identical to those of the first embodiment are denoted by the same reference numerals, and descriptions of the identical components will be reduced or omitted.

[0239] like Fig.10 As shown in , in the transparent display device 4000 according to the fourth embodiment of the present disclosure, the first auxiliary electrode 414 is formed on the substrate 100 between the emission area EA and the transparent area TA, and the second auxiliary electrode 146 and the first connection pattern 162 are sequentially formed on the first auxiliary electrode 414.

[0240] The second auxiliary electrode 146 contacts the first auxiliary electrode 414 through the fourth contact hole 140 d , and the first connection pattern 162 contacts the second auxiliary electrode 146 through the fifth contact hole 155 b .

[0241] Here, the fifth contact hole 155 b may be disposed right above the first auxiliary electrode 414 , and the first connection pattern 162 may overlap the first auxiliary electrode 414 .

[0242] At this time, Fig.10 In the embodiment, the fifth contact hole 155b may be disposed on the right side of the fourth contact hole 140d, and the fifth contact hole 155b may be disposed between the fourth contact hole 140d and the transparent area TA. However, the present disclosure is not limited thereto.

[0243] Or, if Figure 3 As shown in the first embodiment, the fourth contact hole 140d may be disposed on the right side of the fifth contact hole 155b, and the fourth contact hole 140d may be disposed between the fifth contact hole 155b and the transparent area TA.

[0244] Fig.11 1 is a schematic plan view of a transparent display device according to a fifth embodiment of the present disclosure, and mainly shows a dike configuration. The transparent display device of the fifth embodiment has substantially the same configuration as the transparent display device of the first embodiment, except for the arrangement of the light-emitting region and the dike. The same reference numerals are used for the same parts as those of the first embodiment, and the description of the same parts will be reduced or omitted.

[0245] like Fig.11As shown in FIG. 1 , in the transparent display device 5000 according to the fifth embodiment of the present disclosure, one pixel P includes a light-emitting area EA and a transparent area TA. The light-emitting area EA includes a first light-emitting area EA1, a second light-emitting area EA2, and a third light-emitting area EA3 corresponding to a red sub-pixel, a green sub-pixel, and a blue sub-pixel, respectively.

[0246] The light emitting area EA and the transparent area TA are arranged along a first direction (e.g., a vertical direction), and the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 are also arranged along the first direction. Here, the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 may have different sizes. In this case, the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 may have the same length along a second direction (e.g., a horizontal direction) perpendicular to the first direction, and have different widths along the first direction, but are not limited thereto.

[0247] The bank 570 is formed between the first, second and third emission areas EA1, EA2 and EA3 and between the emission area EA and the transparent area TA. The bank 570 has a first opening 570a corresponding to each of the first, second and third emission areas EA1, EA2 and EA3 and a second opening 570c corresponding to the transparent area TA.

[0248] In addition, the bank 570 has an auxiliary contact hole 570 b between the emission area EA and the transparent area TA.

[0249] The bank 570 includes a first bank 572 having hydrophilicity and a second bank 574 having hydrophobicity. The first bank 572 is disposed between the first, second, and third emission regions EA1, EA2, and EA3 adjacent to each other along the first and second directions. Here, the first bank 572 may be omitted between the first, second, and third emission regions EA1, EA2, and EA3 adjacent to each other along the first direction.

[0250] The second bank 574 is disposed between the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 adjacent to each other along the first direction. Here, the first opening 570a as the opening of the second bank 574 may be disposed corresponding to the light emitting areas EA1, EA2, and EA3 of each sub-pixel row including the same color sub-pixels arranged along the second direction.

[0251] The first and second auxiliary electrodes 114 and 146 and the first and second connection patterns 162 and 164 are formed under the bank 570 .

[0252] The first auxiliary electrode 114 may be provided in a line shape extending along the first direction, and one first auxiliary electrode 114 may be provided between pixels P adjacent to each other along the second direction.

[0253] The second auxiliary electrode 146 is disposed between the emission area EA and the transparent area TA and partially overlaps the first auxiliary electrode 114. The second auxiliary electrode 146 is connected to the first auxiliary electrode 114 through the contact hole 140d.

[0254] In addition, the first connection pattern 162 is disposed between the emission area EA and the transparent area TA and partially overlaps the second auxiliary electrode 146. The first connection pattern 162 is connected to the second auxiliary electrode 146 through a contact hole (not shown) under the auxiliary contact hole 570b.

[0255] The second connection pattern 164 is disposed corresponding to the transparent area TA and is exposed through the second opening 570 c .

[0256] In addition, the auxiliary contact hole 570 b of the bank 570 is disposed corresponding to the first connection pattern 162 .

[0257] In the transparent display device 5000 according to the fifth embodiment of the present disclosure, due to the first opening 570a, the light-emitting layers of the sub-pixels of the same color are connected to each other and formed in one piece, thereby minimizing the deviation of the dripping amount between the nozzles and uniformly forming the thickness of the light-emitting layer of the sub-pixel. Therefore, mura defects are prevented, thereby effectively preventing the image quality of the display device from being degraded.

[0258] Will refer to Fig.12 and 13 A cross-sectional structure of a transparent display device 5000 according to a fifth embodiment of the present disclosure is described in detail.

[0259] Fig.12 is corresponding to Fig.11 The cross-sectional view along line III-III', Fig.13 is corresponding to Fig.11 Cross-sectional view along line IV-IV'.

[0260] like Fig.12 and 13 As shown in FIG. 1 , in the transparent display device 5000 according to the fifth embodiment of the present disclosure, a pixel P including a light emitting area EA and a transparent area TA is defined on a substrate 100, and a first auxiliary electrode 114 is formed on the substrate 100 between light emitting areas EA adjacent to each other along the second direction. A buffer layer 120 is formed on the first auxiliary electrode 114 substantially on the entire surface of the substrate 100, and a thin film transistor T is formed on the buffer layer 120 corresponding to the light emitting area EA of each sub-pixel.

[0261] Then, a passivation layer 150 and a capping layer 155 are sequentially formed substantially over the entire surface of the substrate 100 , and a first electrode 160 is formed on the capping layer 155 in the emission area EA of each sub-pixel.

[0262] The capping layer 155 and the passivation layer 150 have a drain contact hole 155 a exposing a portion of the thin film transistor T (ie, the drain electrode of the thin film transistor T), and the first electrode 160 contacts the drain electrode of the thin film transistor T through the drain contact hole 155 a.

[0263] In addition, although not shown in the figure, Fig.11 The first connection pattern 162 is formed on the capping layer 155 between the emission area EA and the transparent area TA, and is formed of the same material as the first electrode 160 .

[0264] In addition, the second connection patterns 164 are formed on the capping layer 155 in the transparent area TA, and are formed of a transparent conductive material.

[0265] Next, a bank 570 is formed on the first electrode 160, the first connection pattern 162, and the second connection pattern 164. The bank 570 has a hydrophilic first bank 572 and a hydrophobic second bank 574. The bank 570 has a first opening 570a corresponding to the emission area EA and a second opening 570c corresponding to the transparent area TA.

[0266] At this time, the first bank 572 is formed between adjacent same color sub-pixels and between adjacent different color sub-pixels. On the other hand, the second bank 574 is formed only between adjacent different color sub-pixels and exposes the first bank 572 disposed between adjacent same color sub-pixels.

[0267] The light emitting layer 180 is formed on the first electrode 160 exposed by the first opening 570a. The light emitting layer 180 may include a first charge auxiliary layer 182, a light emitting material layer 184, and a second charge auxiliary layer 186 sequentially located above the first electrode 160. The second charge auxiliary layer 186 is substantially formed over the entire surface of the substrate 100, so that the second charge auxiliary layer 186 may be formed on the second bank 574, the first connection pattern 162, and the second connection pattern 164.

[0268] Here, the light emitting layer 180 is also formed on the first bank 572 exposed between adjacent same color sub-pixels, and the light emitting layer 180 on the first bank 572 is connected to the light emitting layer 180 on the first electrode 160 adjacent thereto, thereby forming a whole.

[0269] At least the first charge assisting layer 182 and the light emitting material layer 184 of the light emitting layer 180 are formed by a solution process. Here, solutions dropped through different nozzles corresponding to the same color sub-pixel rows are connected to each other, and the solutions are dried to form each of the first charge assisting layer 182 and the light emitting material layer 184. Thus, the deviation of the dropping amount between the nozzles is minimized, so that the thickness of the thin film formed in each sub-pixel can be uniformly formed.

[0270] In addition, the second charge assisting layer 186 is formed by a thermal evaporation process. Alternatively, the second charge assisting layer 186 may be formed only in the first opening 570a by a solution process.

[0271] Next, the second electrode 190 is formed on the light emitting layer 180. The first electrode 160, the light emitting layer 180, and the second electrode 190 constitute a light emitting diode De.

[0272] Here, the second electrode 190 is formed substantially over the entire surface of the substrate 100. Thus, the second electrode 190 is also formed on the second bank 574, the first and second connection patterns 162 and 164, and is electrically connected thereto.

[0273] Fig.14 1 is a schematic plan view of a transparent display device according to a sixth embodiment of the present disclosure, and mainly shows a bank structure. The transparent display device of the sixth embodiment has substantially the same structure as the transparent display device of the fifth embodiment, except for the arrangement of the first auxiliary electrode. The same reference numerals are given to the same parts as those of the fifth embodiment, and the description of the same parts will be reduced or omitted.

[0274] like Fig.14 As shown in FIG. 1 , in the transparent display device 6000 according to the sixth embodiment of the present disclosure, one pixel P includes a light-emitting area EA and a transparent area TA. The light-emitting area EA includes a first light-emitting area EA1, a second light-emitting area EA2, and a third light-emitting area EA3 corresponding to a red sub-pixel, a green sub-pixel, and a blue sub-pixel, respectively.

[0275] The light emitting area EA and the transparent area TA are arranged along a first direction (eg, a vertical direction), and the first light emitting area EA1 , the second light emitting area EA2 , and the third light emitting area EA3 are also arranged along the first direction.

[0276] The first auxiliary electrode 614 may be provided in a line shape extending along the second direction (eg, the horizontal direction). The first auxiliary electrode 614 may be provided between the emission area EA and the transparent area TA arranged along the first direction.

[0277] The transparent display device 6000 according to the sixth embodiment of the present disclosure may have Fig.12 and 13 The cross-sectional structure corresponds to the cross-sectional structure.

[0278] In the present disclosure, since each pixel includes a light-emitting region and a transparent region, surrounding environment information such as a background may be displayed through the transparent region while image information is displayed through the light-emitting region.

[0279] Furthermore, the light emitting areas of the red, green, and blue sub-pixels are configured to have different sizes, and the lifespans of the light emitting diodes disposed in the respective sub-pixels can be made uniform, thereby increasing the lifespan of the transparent display device.

[0280] Furthermore, by forming at least a portion of the light emitting layer through a solution process, a fine metal mask can be omitted, thereby reducing manufacturing costs, and a display device having a large size and a high resolution can be realized.

[0281] In addition, the transparent display device is implemented as a top-emitting type, thereby increasing brightness and reducing power consumption. At this time, the second electrode is electrically connected to the auxiliary electrode through the first connection pattern, so that the resistance of the second electrode is reduced. In addition, the second electrode is electrically connected to the second connection pattern of the transparent area, thereby improving the electrical contact characteristics between the second electrode and the first connection pattern.

[0282] It will be apparent to those skilled in the art that various modifications and variations may be made to the device of the present disclosure without departing from the spirit or scope of the embodiments. Therefore, the present disclosure is intended to cover modifications and variations of the present invention within the scope of the appended claims and their equivalents.

Claims

1. A transparent display device, comprising: a substrate having a light emitting region and a transparent region; a light emitting diode, the light emitting diode being disposed in the light emitting region and comprising a first electrode, a light emitting layer, and a second electrode; a first connection pattern, which is disposed between the light emitting region and the transparent region and is formed of the same material as the first electrode and is formed on the same layer as the first electrode; and a second connection pattern, the second connection pattern being disposed in the entire transparent region and extending to a region between the light emitting region and the transparent region to be connected to the first connection pattern, The second electrode overlaps with the first connection pattern and the second connection pattern, and is electrically connected to the first connection pattern and the second connection pattern. 2 . The transparent display device according to claim 1 , wherein the second connection pattern is formed of a transparent conductive material. 3 . The transparent display device of claim 1 , wherein the second connection pattern overlaps and contacts a top surface and a side surface of the first connection pattern. 4 . The transparent display device according to claim 1 , wherein each of the first electrode and the first connection pattern includes a first layer, a second layer, and a third layer, and the second connection pattern is formed as a whole with the first layer of the first connection pattern. 5 . The transparent display device according to claim 4 , wherein the second layer is disposed between the first layer and the third layer, and the first layer is disposed between the substrate and the second layer. 6 . The transparent display device according to claim 4 , wherein the second layer is disposed between the first layer and the third layer, and the third layer is disposed between the substrate and the second layer. 7 . The transparent display device of claim 6 , wherein the second connection pattern covers and contacts side surfaces of the second layer and the third layer.

8. The transparent display device according to claim 1, wherein the light-emitting layer comprises a first charge auxiliary layer, a light-emitting material layer and a second charge auxiliary layer, and the second charge auxiliary layer is disposed between the second electrode and the first connection pattern and between the second electrode and the second connection pattern.

9. The transparent display device according to claim 1, further comprising a bank having a first opening, a second opening, and an auxiliary contact hole, wherein the first opening corresponds to the light emitting area, the second opening corresponds to the transparent area, and the auxiliary contact hole corresponds to the first connection pattern. 10 . The transparent display device according to claim 9 , wherein the bank comprises a first bank having hydrophilicity and a second bank having hydrophobicity. The transparent display device according to claim 10 , wherein the first bank and the second bank are formed as one body. 12 . The transparent display device according to claim 1 , wherein the light emitting area and the transparent area are arranged along a first direction, and the light emitting area includes a first light emitting area, a second light emitting area, and a third light emitting area arranged along a second direction perpendicular to the first direction. 13 . The transparent display device according to claim 1 , wherein the light emitting area and the transparent area are arranged along a first direction, and the light emitting area includes a first light emitting area, a second light emitting area, and a third light emitting area arranged along the first direction. 14 . The transparent display device according to claim 13 , wherein the light emitting layers of the light emitting regions adjacent to each other along a second direction perpendicular to the first direction are connected to each other to form a whole. 15 . The transparent display device according to claim 1 , further comprising at least one auxiliary electrode between the substrate and the first connection pattern, wherein the second electrode is electrically connected to the at least one auxiliary electrode through the first connection pattern and the second connection pattern. 16 . The transparent display device according to claim 1 , further comprising at least one thin film transistor between the substrate and the first electrode, wherein the first electrode is connected to the at least one thin film transistor.

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