Semiconductor device

Abstract

A semiconductor device having a connection mechanism capable of reducing inductance is provided. A capacitor has a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet provided between the first connection terminal and the second connection terminal, the first connection terminal, the second insulating sheet, and the second connection terminal extending outward from the case. A semiconductor module has a terminal stack portion in which a first power terminal, a first insulating sheet, and a second power terminal are overlaid in this order. The first power terminal has a first bonding region electrically connected to the first connection terminal, the second power terminal has a second bonding region electrically connected to the second connection terminal, and the first insulating sheet has a platform portion extending in a direction from the second bonding region toward the first bonding region in plan view.

Description

Technical Field

[0001] This invention relates to semiconductor devices. Background Technology

[0002] A semiconductor device includes a semiconductor module and a capacitor. The semiconductor module is electrically connected to the capacitor. The semiconductor module includes power devices and has, for example, power conversion functions. Power devices are, for example, IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). In such a semiconductor device, the P and N terminals of the semiconductor module are connected to the P and N terminals of the capacitor via a busbar. To facilitate the connection process, the connection is usually made by threaded fixing. However, in this connection method, the wiring length between the semiconductor module and the capacitor can sometimes become longer. This results in an increase in inductance. Therefore, a connection method has been proposed that simplifies the connection and reduces inductance without using threaded fixing (for example, see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2007-234694 Summary of the Invention

[0006] Technical issues

[0007] According to Patent Document 1, a reduction in inductance can be expected in the connection mechanism on the semiconductor module side. However, the connection mechanism on the capacitor side is not specifically described. Therefore, it is considered that a reduction in inductance cannot be expected, and the effect of reducing inductance as a whole semiconductor device is also small.

[0008] The present invention has been made in view of this, and its object is to provide a semiconductor device having a connection mechanism capable of reducing inductance.

[0009] Technical solution

[0010] According to one aspect of the present invention, a semiconductor device is provided, which includes a capacitor and a semiconductor module. The capacitor has a housing, a first connection terminal, a second connection terminal, and a flexible insulating member disposed between the first connection terminal and the second connection terminal. The housing includes a capacitor element. The first connection terminal, the flexible insulating member, and the second connection terminal extend outward from the housing. The semiconductor module has a terminal stack formed by sequentially overlapping a first power terminal, a first insulating member, and a second power terminal. The first power terminal has a first bonding region electrically connected to the first connection terminal. The second power terminal has a second bonding region electrically connected to the second connection terminal. The first insulating member has a platform portion that extends in a direction from the second bonding region toward the first bonding region when viewed from above.

[0011] Technical effect

[0012] According to the publicly available technology, it is possible to reduce the inductance between the semiconductor module and the capacitor. Attached Figure Description

[0013] Figure 1 It is a semiconductor device according to the first embodiment.

[0014] Figure 2 This is the semiconductor module of the first embodiment.

[0015] Figure 3 It is an equivalent circuit composed of a semiconductor module of the semiconductor device of the first embodiment.

[0016] Figure 4 This is the capacitor of the first embodiment.

[0017] Figure 5 This is a cross-sectional view showing the connection mechanism included in the semiconductor device of the first embodiment.

[0018] Figure 6 This is a cross-sectional view (one of the views) used to illustrate the connection method of the semiconductor device in the first embodiment.

[0019] Figure 7 This is a perspective view (one of the views) illustrating the connection method of the semiconductor device according to the first embodiment.

[0020] Figure 8 This is a cross-sectional view (second one) used to illustrate the connection method of the semiconductor device in the first embodiment.

[0021] Figure 9 This is a perspective view (second one) illustrating the connection method of the semiconductor device in the first embodiment.

[0022] Figure 10This is a cross-sectional view showing the connection mechanism included in the semiconductor device of the second embodiment.

[0023] Figure 11 This is a cross-sectional view showing the connection mechanism included in the semiconductor device according to the third embodiment.

[0024] Figure 12 This is a cross-sectional view showing the connection mechanism included in the semiconductor device according to the fourth embodiment.

[0025] Symbol Explanation

[0026] 10, 10a, 10b, 10c Semiconductor devices

[0027] 20 Semiconductor Modules

[0028] 21, 31 Casing

[0029] 21a First side

[0030] Terminal areas 21a1, 21a2, and 21a3

[0031] 21b Second side

[0032] Storage areas 21c, 21c1, 21c2, and 21c3

[0033] 22, 22a, 22b, 22c First power terminals

[0034] 23, 23a, 23b, 23c: First insulating sheet (first insulating component)

[0035] 24, 24a, 24b, 24c Second power terminals

[0036] Terminal stack-up portions 25, 25a, 25b, and 25c

[0037] 26a, 26b, 26c control terminals

[0038] 27a U-terminal

[0039] 27b V terminal

[0040] 27c W terminal

[0041] Platform Departments 28, 28a, 28b, and 28c

[0042] Capacitors 30, 30a, 30b, and 30c

[0043] 31a Third side

[0044] 32, 132 First connection terminal

[0045] 32a First connecting part

[0046] 32b Second connection part

[0047] 32c Third Connection Part

[0048] 33, 133, 233 Second insulating sheet

[0049] 33a First Installation Part

[0050] 33b Second Installation Section

[0051] 33c Third Installation Part

[0052] 34, 34a, 34b, 34c Second connection terminals

[0053] Connecting components 40, 40a, 40b, 40c, 42, and 43

[0054] 41 Third insulating sheet

[0055] 42a Locking part

[0056] 42b Third Wiring Section

[0057] Laser welding marks on 44a, 44b, and 44c

[0058] 221 First junction zone

[0059] 241 Second junction area

[0060] 321 First Conductor Section

[0061] 322, 322a First Wiring Section

[0062] 341 Second Conductor

[0063] 342, 342a, 342b Second Wiring Section

[0064] 343 Third junction area

[0065] 344 Fourth junction area Detailed Implementation

[0066] The embodiments will now be described with reference to the accompanying drawings. It should be noted that in the following description, "front" and "top surface" are used interchangeably. Figure 1 In the semiconductor device 10, the surface facing upwards is indicated. Similarly, "upper" is used in... Figure 1 In semiconductor device 10, the upper side is indicated. "Back side" and "lower surface" are... Figure 1 In the semiconductor device 10, the downward-facing surface is indicated. Similarly, "down" is used in... Figure 1The direction shown in the semiconductor device 10 is the lower side. The same directionality may be shown in other figures as needed. The terms "front," "upper surface," "upper," "back," "lower surface," "lower," and "side" are merely convenient expressions for determining relative positional relationships and do not limit the technical concept of the invention. For example, "upper" and "lower" do not necessarily indicate the plumb direction relative to the ground. That is, the directions of "upper" and "lower" are not limited to the direction of gravity.

[0067] [First Implementation Method]

[0068] use Figure 1 The semiconductor device of the first embodiment will be described. Figure 1 This is a semiconductor device according to the first embodiment. The semiconductor device 10 includes a semiconductor module 20 and a capacitor 30. The semiconductor module 20 and the capacitor 30 are positioned as close as possible to each other and arranged with their sides facing each other. Connecting members 40a, 40b, and 40c electrically and mechanically connect the semiconductor module 20 and the capacitor 30. The connecting members 40a, 40b, and 40c show linear laser welding marks 44a and 44b on the capacitor 30 side and the semiconductor module 20 side, respectively. The laser welding marks 44a and 44b will be described later. It should be noted that the number and width of the connecting members 40a, 40b, and 40c are just examples. The number and width of the connecting members 40a, 40b, and 40c can be selected based on the number and width of the terminal stack portions 25a, 25b, and 25c (described later) included in the semiconductor module 20. It should be noted that, in the following description, unless otherwise specified, the connecting parts 40a, 40b, 40c and the terminal stacks 25a, 25b, 25c will be described as connecting parts 40 and terminal stacks 25.

[0069] Next, use Figure 2 and Figure 3 The semiconductor module 20 included in the semiconductor device 10 will be described. Figure 2 This is the semiconductor module of the first embodiment. Figure 3 It is an equivalent circuit composed of a semiconductor module of the semiconductor device of the first embodiment.

[0070] Semiconductor module 20 has a semiconductor unit (not shown) and a housing 21 for housing the semiconductor unit. The semiconductor unit has a ceramic circuit board and a semiconductor chip disposed on the ceramic circuit board. The ceramic circuit board has an insulating plate, a heat sink formed on the back of the insulating plate, and a circuit pattern formed on the front of the insulating plate. The insulating plate is made of a ceramic with excellent thermal conductivity. Such ceramics are alumina, aluminum nitride, silicon nitride, etc., which have high-temperature conductivity. The heat sink is made of a metal with excellent thermal conductivity. Such metals are aluminum, iron, silver, copper, or alloys containing at least one of these metals. The circuit pattern is made of a metal with excellent electrical conductivity. Such metals are copper or copper alloys, etc. It should be noted that the number and shape of the circuit patterns can be appropriately selected according to the specifications of the semiconductor module 20. For example, a DCB (Direct Copper Bonding) substrate or an AMB (Active Metal Brazed) substrate can be used as the ceramic circuit board having such a structure.

[0071] Semiconductor chips include switching elements such as IGBTs and power MOSFETs made of silicon or silicon carbide. Such semiconductor chips typically have a drain (or collector) electrode as the main electrode on the back side and a gate electrode and a source electrode (or emitter electrode) as the main electrodes on the front side. Additionally, semiconductor chips may include, as needed, SBDs (Schottky Barrier Diodes), PiN (P-intrinsic-N) diodes, and FWDs (Free Wheeling Diodes). These semiconductor chips have a cathode electrode as the main electrode on the back side and an anode electrode as the main electrode on the front side. Furthermore, RC (Reverse-Conducting) IGBTs, which combine the functions of IGBTs and FWDs, can also be used as semiconductor chips. The number and type of such semiconductor chips are appropriately selected according to the specifications of the semiconductor module 20.

[0072] The housing 21 includes receiving areas 21c1, 21c2, and 21c3. Additionally, the housing 21 includes first power terminals 22a, 22b, and 22c, first insulating sheets 23a, 23b, and 23c, and second power terminals 24a, 24b, and 24c. Furthermore, the housing 21 includes a U terminal 27a, a V terminal 27b, and a W terminal 27c. This housing 21 is formed by injection molding using a heat-flexible resin. Furthermore, control terminals 26a, 26b, and 26c are respectively mounted on the sides of the receiving areas 21c1, 21c2, and 21c3 (parallel to the short side direction of the housing 21). The heat-flexible resin is, for example, polyphenylene sulfide (PPS), polybutylene terephthalate (PBT) resin, polybutylene succinate (PBS) resin, polyamide (PA) resin, or acrylonitrile butadiene styrene (ABS) resin. It should be noted that control terminals 26a, 26b, and 26c are also configured to include predetermined terminals by injection molding using thermally flexible resin. It should be noted that, unless otherwise specified, the receiving areas 21c1, 21c2, 21c3, the first power terminals 22a, 22b, 22c, and the second power terminals 24a, 24b, and 24c will be described as receiving area 21c, first power terminal 22, and second power terminal 24. Furthermore, the first insulating sheets 23a, 23b, and 23c, which will be described later, will also be described as first insulating sheet 23.

[0073] Storage areas 21c1, 21c2, and 21c3 are spaces respectively provided along the long side of the housing 21 in the middle part of the housing 21 when viewed from above. The semiconductor units described above are respectively housed in storage areas 21c1, 21c2, and 21c3. The semiconductor units are electrically connected within storage areas 21c1, 21c2, and 21c3 to first power terminals 22a, 22b, and 22c, second power terminals 24a, 24b, and 24c, U terminal 27a, V terminal 27b, and W terminal 27c, respectively. Additionally, the semiconductor units are also electrically connected to control terminals 26a, 26b, and 26c. The electrical connections utilize wiring components such as bonding wires and lead frames. The wiring components are made of a material with excellent conductivity. Such materials are metals such as aluminum and copper, or alloys containing at least one of these metals. If the semiconductor units are housed in storage areas 21c1, 21c2, and 21c3 in this manner, then... Figure 2 As shown, its interior is encapsulated by a resin. The encapsulation component includes a thermosetting resin and a filler contained within the thermosetting resin. The thermosetting resin is epoxy resin, phenolic resin, maleimide resin, etc. The filler is silicon dioxide, aluminum oxide, boron nitride, or aluminum nitride.

[0074] One end of the front side of the first power terminals 22a, 22b, and 22c is exposed along the long side of the terminal areas 21a1, 21a2, and 21a3 on the first side portion 21a of the housing 21. The other end of the first power terminals 22a, 22b, and 22c is electrically connected inside the housing 21 to a portion corresponding to the N-terminal of a semiconductor chip. At least the first side portion 21a of the first power terminals 22a, 22b, and 22c is flat. The first power terminals 22a, 22b, and 22c are made of a metal with excellent conductivity. Such a metal is, for example, copper or a copper alloy.

[0075] The second power terminals 24a, 24b, and 24c are disposed on the first power terminals 22a, 22b, and 22c with one end of the first power terminals 22a, 22b, and 22c exposed, separated by the first insulating sheets 23a, 23b, and 23c. It should be noted that the front ends (platform portions 28a, 28b, and 28c) of the first insulating sheets 23a, 23b, and 23c are located between the front ends of the first power terminals 22a, 22b, and 22c and the front ends of the second power terminals 24a, 24b, and 24c. This maintains the insulation between the first power terminals 22a, 22b, and 22c and the second power terminals 24a, 24b, and 24c. The first insulating sheets 23a, 23b, and 23c are made of an insulating material. Such insulating materials include, for example, insulating paper formed from a fully aromatic polyamide polymer, or sheet materials formed from fluorinated or polyimide resin materials. It should be noted that, unless otherwise specified, platform portions 28a, 28b, and 28c will be described as platform portion 28. One end of the front face of the second power terminals 24a, 24b, and 24c protrudes along the longitudinal direction of the first side portion 21a of the housing 21. The other end of the second power terminals 24a, 24b, and 24c is electrically connected inside the housing 21 to a portion corresponding to the P-terminal of a semiconductor chip. At least the first side portion 21a of the second power terminals 24a, 24b, and 24c is flat. The second power terminals 24a, 24b, and 24c are made of a metal with excellent conductivity. Such a metal is, for example, copper or a copper alloy.

[0076] Thus, the first power terminals 22a, 22b, 22c, the first insulating sheets 23a, 23b, 23c, and the second power terminals 24a, 24b, 24c are stacked sequentially to form terminal stack portions 25a, 25b, 25c. At this time, the edge regions of the front faces of the first power terminals 22a, 22b, 22c, the first insulating sheets 23a, 23b, 23c, and the second power terminals 24a, 24b, 24c on the first side portion 21a are exposed. Furthermore, as will be discussed later... Figure 5 As shown, the first power terminals 22a, 22b, and 22c (in) Figure 5The front end of the first power terminal 22) and the second power terminals 24a, 24b, 24c (in) Figure 5 The front ends of the second power terminals 24a, 22b, 22c are separated by a predetermined distance. This ensures a creepage distance between the first power terminals 22a, 22b, 22c and the second power terminals 24a, 24b, 24c. It should be noted that this distance varies depending on the withstand voltage of the semiconductor device 10. This distance is, for example, 3 mm or more and 14.5 mm or less. Alternatively, it can be 6 mm or more and 12.5 mm or less. Furthermore, when the withstand voltage is 750V, this distance can be 7.5 mm plus a tolerance of 0.5 mm; when the withstand voltage is 1200V, this distance can be 12 mm plus a tolerance of 0.5 mm. Additionally, the front ends of the first insulating sheets 23a, 23b, 23c are located within this creepage distance.

[0077] One end of control terminals 26a, 26b, and 26c is at Figure 2 Extending upwards from the center. Furthermore, the other ends of control terminals 26a, 26b, and 26c are electrically connected to the gate electrodes of the semiconductor chips in each semiconductor unit within the receiving areas 21c1, 21c2, and 21c3, respectively. Control terminals 26a, 26b, and 26c are made of a metal with excellent conductivity. Such metals include, for example, copper, copper alloys, aluminum, and aluminum alloys.

[0078] The other ends of terminals U-27a, V-27b, and W-27c are electrically connected to the source electrode (or emitter electrode) of the semiconductor chip in each semiconductor unit within the receiving areas 21c1, 21c2, and 21c3, respectively. One end of terminals U-27a, V-27b, and W-27c protrudes along the long side of the housing 21 on the second side 21b of the housing 21. Terminals U-27a, V-27b, and W-27c are made of a metal with excellent conductivity. Such a metal is, for example, copper or a copper alloy.

[0079] Such a semiconductor module 20 includes Figure 3 The equivalent circuit is shown. It should be noted that in... Figure 3 In this process, switching elements can be used, and power MOSFETs or IGBTs can be used as semiconductor chips. In the semiconductor device 10, the second power terminals 24a, 24b, and 24c, which are P terminals, are electrically connected to the collectors of the semiconductor chips in each semiconductor unit within the receiving regions 21c1, 21c2, and 21c3, respectively. The first power terminals 22a, 22b, and 22c, which are N terminals, are electrically connected to the emitter electrodes of the semiconductor chips in each semiconductor unit within the receiving regions 21c1, 21c2, and 21c3, respectively. In addition, the U terminal 27a, V terminal 27b, and W terminal 27c are electrically connected in the receiving regions 21c1, 21c2, and 21c3 to the middle of the series-connected semiconductor chips in each semiconductor unit.

[0080] Next, use Figure 4 The capacitor 30 will be described. Figure 4 This is the capacitor of the first embodiment. It should be noted that... Figure 4 (A) is a three-dimensional view of capacitor 30. Figure 4 (B) is the capacitor 30 from and Figure 4 (A) A perspective view viewed from the opposite direction. The capacitor 30 includes a housing 31, a first connecting terminal 32, a second insulating sheet 33, and a second connecting terminal 34.

[0081] The housing 31 is the capacitor body. The housing 31, for example, houses multiple capacitor elements, each consisting of a pair of thin-film dielectric layers stacked and wound together and connected to the positive and negative terminals. Therefore, the housing 31 ensures insulation of the capacitor elements and is constructed of a lightweight material, such as epoxy resin. The other end of the first connecting terminal 32 is electrically connected to the N-terminus of all capacitor elements within the housing 31. One end of the first connecting terminal 32 extends outward from the front of the housing 31. The portion of the first connecting terminal 32 extending from the housing 31 is approximately L-shaped when viewed from the side. Figure 5 As described later, the first connecting terminal 32, which is generally L-shaped, includes a first conductive portion 321 and a first wiring portion 322. The other end of the first conductive portion 321 is electrically connected to the N-pole of a capacitor element within the housing 31, and the first conductive portion 321 extends vertically outward from the front of the housing 31. The first wiring portion 322 is generally orthogonal to the first conductive portion 321 and extends approximately parallel to the front of the housing 31 towards the third side portion 31a. Furthermore, the portion of the first connecting terminal 32 extending from the housing 31 (the first wiring portion 322), when viewed from above, is divided into a first connecting portion 32a, a second connecting portion 32b, and a third connecting portion 32c, forming a comb-like shape. It should be noted that in... Figure 4 In (B), the symbols for the first connecting portion 32a, the second connecting portion 32b, and the third connecting portion 32c are omitted. The widths of the first connecting portion 32a, the second connecting portion 32b, and the third connecting portion 32c correspond to the widths of the receiving areas 21c1, 21c2, and 21c3 (first power terminals 22a, 22b, and 22c) of the semiconductor module 20, respectively. The first connecting terminal 32 is made of a metal with excellent conductivity. Such a metal is, for example, copper or a copper alloy.

[0082] The other end of the second connection terminal 34 is electrically connected to the P-terminal of all capacitor elements within the housing 31. One end of the second connection terminal 34 extends outward from the front of the housing 31. The second connection terminal 34 is separately disposed on the opposite side of the third side portion 31a relative to the first connection terminal 32. The portion of the second connection terminal 34 extending from the housing 31 is approximately L-shaped when viewed from the side. Figure 5 As described later, the generally L-shaped second connection terminal 34 includes a second conductive portion 341 and a second wiring portion 342. The other end of the second conductive portion 341 is electrically connected to the P-terminal of the capacitor element within the housing 31, and the second conductive portion 341 extends perpendicularly outward from the front of the housing 31. The second wiring portion 342 is generally orthogonal to the second conductive portion 341 and extends generally parallel to the front of the housing 31 towards the opposite side of the third side portion 31a. The second connection terminal 34 is made of a metal with excellent conductivity. Such a metal is, for example, copper or a copper alloy.

[0083] The second insulating sheet 33 is longer than the first connecting terminal 32 and extends outward from between the first connecting terminal 32 and the second connecting terminal 34 of the housing 31. Therefore, outside the housing 31, the first connecting terminal 32 and the second connecting terminal 34 maintain insulation through the second insulating sheet 33. The second insulating sheet 33 is flexible and made of an insulating material. Such insulating materials include, for example, insulating paper formed from a fully aromatic polyamide polymer, or sheet materials formed from fluorinated or polyimide resin materials. Furthermore, the front end of the second insulating sheet 33, when viewed from above, is divided into a first mounting portion 33a, a second mounting portion 33b, and a third mounting portion 33c in a comb-like shape. It should be noted that in... Figure 4 In (B), the symbols for the first mounting portion 33a, the second mounting portion 33b, and the third mounting portion 33c are omitted. The widths of the first mounting portion 33a, the second mounting portion 33b, and the third mounting portion 33c correspond to the widths of the receiving areas 21c1, 21c2, and 21c3 (the first insulating sheets 23a, 23b, and 23c) of the semiconductor module 20, respectively.

[0084] It should be noted that, although the illustration is omitted, terminals are also provided in the housing 31. The other end of such terminals is electrically connected within the housing 31 to the positive and negative terminals of all capacitor elements, respectively. One end of the terminal extends outward from the housing 31. The protruding portion of the terminal on the housing 31 can be any portion different from the first connecting terminal 32 and the second connecting terminal 34. For example, it can be provided along the side opposite to the third side portion 31a. The terminals are made of a metal with excellent conductivity. Such a metal is, for example, copper or a copper alloy.

[0085] Next, the connecting parts 40a, 40b, and 40c will be described (see reference). Figure 1 The connecting components 40a, 40b, and 40c are flat when viewed from above. The width of one end of each connecting component 40a, 40b, and 40c corresponds to the width of the receiving areas 21c1, 21c2, and 21c3 (second power terminals 24a, 24b, and 24c) of the semiconductor module 20. The thickness of each connecting component 40a, 40b, and 40c is configured to be thinner than the thickness of the second power terminals 24a, 24b, and 24c. One end of each connecting component 40a, 40b, and 40c is joined to the second power terminals 24a, 24b, and 24c by laser welding. The other end of each connecting component 40a, 40b, and 40c is joined to the second connection terminal 34 of the capacitor 30 by laser welding. The joining by laser welding can be either a continuous laser beam (seam laser) or a pulsed laser beam (spot laser). Figure 1 The image shows a case where bonding is performed using a line laser. Therefore, in Figure 1 The connecting components 40a, 40b, and 40c have linear laser welding marks 44a and 44b on the capacitor 30 side and the semiconductor module 20 side, respectively. The connecting components 40a, 40b, and 40c are made of a metal with excellent conductivity. Such a metal is, for example, copper or a copper alloy. It should be noted that in the first embodiment, the three connecting components 40a, 40b, and 40c are respectively connected to the second power terminals 24a, 24b, and 24c. However, it is not limited to this; similar to the first connecting terminal 32 and the second insulating sheet 33, the ends of the flat connecting components on the semiconductor module 20 side may be divided into a comb-like shape corresponding to the second power terminals 24a, 24b, and 24c.

[0086] Next, use Figure 5 The connection mechanism between the semiconductor module 20 and the capacitor 30 of the semiconductor device 10 will be described. Figure 5 This is a cross-sectional view showing the connection mechanism included in the semiconductor device of the first embodiment. It should be noted that... Figure 5 yes Figure 1 The cross-sectional view shown is at the point indicated by the dashed line XX. It should be noted that... Figure 5 exist Figure 1 The same structure is also formed in the cross-section of other connecting components 40b and 40c of the semiconductor device 10.

[0087] In the semiconductor device 10, the first wiring portion 322 of the first connection terminal 32 of the capacitor 30 is joined to the first junction area 221 of the first power terminal 22 of the semiconductor module 20. That is, although not shown in the figure, the first connection portion 32a, the second connection portion 32b, and the third connection portion 32c of the first wiring portion 322 of the first connection terminal 32 are joined to the first junction areas of the first power terminals 22a, 22b, and 22c of the semiconductor module 20, respectively. It should be noted that the first junction area 221 is a general term for the first junction areas of the first power terminals 22a, 22b, and 22c.

[0088] The second insulating sheet 33 of the capacitor 30 covers the first connecting terminal 32 from above and is bent toward the semiconductor module 20. The front end of the second insulating sheet 33 reaches the platform portion 28 of the first insulating sheet 23 of the semiconductor module 20. Furthermore, the front end of the second insulating sheet 33 extends to the front of the second power terminal 24. That is, there is a gap between the platform portion 28 and the front end of the second insulating sheet 33, or / and between the front end of the second insulating sheet 33 and the connecting member 40. Additionally, the distance from the front end face of the first connecting terminal 32 to the front end face of the second power terminal 24 is 6 mm or more and 12.5 mm or less. It should be noted that the platform portion 28, when viewed from above, extends from the second bonding area 241 (described later) toward the first bonding area 221 (described later). Furthermore, although not shown in the figure, the first mounting portion 33a, the second mounting portion 33b, and the third mounting portion 33c of the front end of the second insulating sheet 33 reach the first insulating sheets 23a, 23b, and 23c of the semiconductor module 20, respectively.

[0089] The front surface of the second wiring portion 342 of the second connection terminal 34 of the capacitor 30 is on the same plane as the front surface of the second power terminal 24 of the semiconductor module 20. Furthermore, one end of the connecting member 40 engages with the third bonding area 343 of the second wiring portion 342 of the second connection terminal 34 of the capacitor 30, and the other end of the connecting member 40 engages with the second bonding area 241 of the second power terminal 24 of the semiconductor module 20. At this time, the second bonding area 241 and the third bonding area 343 are arranged parallel to the first bonding area 221. Additionally, although not shown in the figure, the other ends of the connecting members 40a, 40b, and 40c engage with the second bonding areas of the second power terminals 24a, 24b, and 24c of the semiconductor module 20, respectively. It should be noted that the second bonding area 241 is a general term for the second bonding areas of the second power terminals 24a, 24b, and 24c. Thus, the connecting member 40 electrically connects the second connection terminal 34 of the capacitor 30 to the second power terminal 24 of the semiconductor module 20. A gap is formed between the back side of the connecting member 40 and the front side of the first wiring portion 322 of the first connection terminal 32 of the capacitor 30. A second insulating sheet 33 is disposed in this gap. Therefore, the first connection terminal 32 maintains insulation relative to the connecting member 40 and the second connection terminal 34. In addition, the second insulating sheet 33 is not limited to... Figure 5 In this state, it can also contact the back of the connecting component 40, the front of the first connecting terminal 32, and the front end of the second power terminal 24 in the gap.

[0090] Next, use Figures 6-9 as well as Figure 5 The connection method between the semiconductor module 20 and the capacitor 30 in such a semiconductor device 10 will be described. Figure 6 and Figure 8 This is a cross-sectional view used to illustrate the connection method of the semiconductor device in the first embodiment. Figure 7 and Figure 9 This is a perspective view illustrating the connection method of the semiconductor device according to the first embodiment. It should be noted that... Figure 6 and Figure 8 Corresponding to Figure 5 Cross-sectional view. Figure 7 and Figure 9 It is a three-dimensional diagram obtained by magnifying the connection between semiconductor module 20 and capacitor 30.

[0091] First, align the front end of the first wiring portion 322 of the first connection terminal 32 of the capacitor 30 with the position of the first power terminal 22 of the semiconductor module 20. At this time, the front surface of the second wiring portion 342 of the second connection terminal 34 of the capacitor 30 is flush with the front surface of the second power terminals 24 (second power terminals 24a, 24b, 24c) of the semiconductor module 20. In this state, the front end of the first wiring portion 322 is joined to the first bonding area 221 of the first power terminal 22 by laser welding. Figure 6 Furthermore, as described above, the first wiring portion 322, when viewed from above, has a comb-like shape comprising a first connecting portion 32a, a second connecting portion 32b, and a third connecting portion 32c. Therefore, the first connecting portion 32a, the second connecting portion 32b, and the third connecting portion 32c of the first wiring portion 322 respectively engage with the first junction areas of the first power terminals 22a, 22b, and 22c of the terminal areas 21a1, 21a2, and 21a3. Figure 7 It should be noted that, in Figure 7 In the middle, the first power terminals 22a, 22b, and 22c are present on the back side of the first connecting portion 32a, the second connecting portion 32b, and the third connecting portion 32c. Figure 7 It was not displayed. Additionally, in Figure 7 In the diagram, laser welding marks 44c are respectively shown on the first connecting portion 32a, the second connecting portion 32b, and the third connecting portion 32c of the first connecting terminal 32. These laser welding marks 44c are obtained using either a line laser or a point laser. Figure 7 The image shows a case where bonding is performed using a line laser.

[0092] Next, the second insulating sheet 33 of the capacitor 30 is bent toward the semiconductor module 20. Because the second insulating sheet is flexible, it can be bent in one step. After bending, the front end of the second insulating sheet 33 is located on the platform portion 28 of the first insulating sheet 23 exposed between the first power terminal 22 and the second power terminal 24 of the semiconductor module 20. Figure 8 It should be noted that the bent second insulating sheet 33 can also contact the first power terminal 22, the first insulating sheet 23, and the second power terminal 24. Furthermore, as described above, the front end of the second insulating sheet 33, when viewed from above, is divided into a first mounting portion 33a, a second mounting portion 33b, and a third mounting portion 33c, forming a comb-like shape. Therefore, the first mounting portion 33a, the second mounting portion 33b, and the third mounting portion 33c of the second insulating sheet 33 respectively cover the first insulating sheets 23a, 23b, and 23c. Figure 9 It should be noted that the first insulating sheets 23a, 23b, and 23c are present on the back of the first mounting portion 33a, the second mounting portion 33b, and the third mounting portion 33c of the second insulating sheet 33. Figure 9 It was not displayed.

[0093] Next, one end and the other end of the connecting member 40 are respectively disposed on the front side of the second wiring portion 342 of the second connection terminal 34 of the capacitor 30 and the front side of the second power terminal 24 of the semiconductor module 20. Then, by laser welding, one end and the other end of the connecting member 40 are respectively joined to the front side of the second wiring portion 342 of the capacitor 30 and the front side of the second power terminal 24 of the semiconductor module 20. Figure 5 Since the thickness of the connecting component 40 is thinner than the thickness of the second power terminal 24, laser welding can be performed more effectively. Furthermore, these connecting components 40a, 40b, and 40c respectively connect the second power terminals 24a, 24b, and 24c of the semiconductor module 20 to the second wiring portion 342 of the second connection terminal 34 of the capacitor 30. Figure 1 Thus, a semiconductor device 10 is obtained, which connects the semiconductor module 20 and the capacitor 30.

[0094] Such a semiconductor device 10 includes a semiconductor module 20 and a capacitor 30. The capacitor 30 has a housing 31 containing capacitor elements, a first connection terminal 32, a second connection terminal 34, and a second insulating sheet 33 disposed between the first connection terminal 32 and the second connection terminal 34. The first connection terminal 32, the second insulating sheet 33, and the second connection terminal 34 extend outward from the housing 31. The semiconductor module 20 has a terminal stack 25 formed by sequentially overlapping a first power terminal 22, a first insulating sheet 23, and a second power terminal 24. The first power terminal 22 has a first bonding region 221 that is electrically connected to the first connection terminal 32, and the second power terminal 24 has a second bonding region 241 that is electrically connected to the second connection terminal 34 via a connecting member 40. The first insulating sheet 23 has a platform portion 28 that extends in a direction from the second bonding region 241 (second power terminal 24) toward the first bonding region 221 when viewed from above.

[0095] In this semiconductor device 10, the semiconductor module 20 and the capacitor 30 are connected in the shortest possible way via the connecting member 40 and the first connecting terminal 32. Therefore, the wiring length between the semiconductor module 20 and the capacitor 30 is also minimized. This reduces the inductance of the semiconductor device 10. Furthermore, in this connection, the first connecting terminal 32 is arranged parallel to the connecting member 40. Therefore, the current flowing through the first connecting terminal 32 and the current flowing through the connecting member 40 are in opposite directions, and the magnetic fields generated by the respective currents are canceled out. This further reduces the inductance of the semiconductor device 10. Therefore, compared to the case where the semiconductor module 20 and the capacitor 30 are connected using only threaded fastening, the semiconductor device 10 can significantly reduce its inductance.

[0096] [Second Implementation]

[0097] In the second embodiment, using Figure 10 The case in which the semiconductor module and the capacitor are connected by a connection mechanism different from that in the first embodiment will be described. Figure 10 This is a cross-sectional view showing the connection mechanism included in the semiconductor device of the second embodiment. Figure 10 Corresponding to the first embodiment Figure 5 A cross-sectional view of the semiconductor device in the second embodiment. It should be noted that, in the second embodiment, the same symbols are used to label the same components as in the semiconductor device 10 of the first embodiment, thereby simplifying or omitting their description.

[0098] Semiconductor device 10a includes semiconductor module 20 and capacitor 30a. Capacitor 30a includes a first connection terminal 32, a second insulating sheet 33, and a second connection terminal 34a. The second connection terminal 34a has a second conductive portion 341 and a second wiring portion 342a. However, the second wiring portion 342a of capacitor 30a extends parallel to the first wiring portion 322 of the first connection terminal 32 on the third side 31a side. Furthermore, the second wiring portion 342a is engaged with the second power terminal 24 of semiconductor module 20. That is, capacitor 30a does not use the connecting member 40 of the first embodiment; instead, the second connection terminal 34a is directly engaged with the second power terminal 24 of semiconductor module 20. It should be noted that, in this case, the second wiring portion 342a of the second connection terminal 34a, when viewed from above, has a comb-like shape similar to the first connection terminal 32. The comb-like front ends of the second wiring portion 342a of the second connection terminal 34a are engaged with the second bonding areas of the second power terminals 24a, 24b, and 24c of semiconductor module 20, respectively. That is, the second connection terminal 34a is joined to the second bonding region 241 of the second power terminal 24 of the semiconductor module 20 in such a way that the thickness of the second connection terminal 34a is thinner than the thickness of the second power terminal 24. Therefore, the second connection terminal 34a can be effectively joined to the second bonding region 241 of the second power terminal 24 by laser welding. It should be noted that in the second embodiment, the case where the first connection terminal 32, the second connection terminal 34a, and the second insulating sheet 33 extend from the front side of the housing 31 is described. The first connection terminal 32, the second connection terminal 34a, and the second insulating sheet 33 may also extend from the third side 31a of the housing 31. In this case, the first connection terminal 32 and the second connection terminal 34a are not generally L-shaped, but flat. The second insulating sheet 33 is not bent, but extends parallel to the flat first connection terminal 32 and the second connection terminal 34a.

[0099] Such a semiconductor device 10a also connects the semiconductor module 20 and the capacitor 30a in the shortest possible way via the first connection terminal 32 and the second connection terminal 34a. Therefore, the wiring length between the semiconductor module 20 and the capacitor 30a is also minimized. This reduces the inductance of the semiconductor device 10a. Furthermore, in this connection, the first connection terminal 32 and the second connection terminal 34a are arranged parallel to each other. Therefore, the current conducting through the first connection terminal 32 and the current conducting through the second connection terminal 34a are in opposite directions, and the magnetic fields generated by the respective currents are canceled out. Therefore, the inductance of the semiconductor device 10a can be further reduced, and a decrease in the reliability of the semiconductor device 10a can be prevented. Moreover, in the semiconductor device 10a, the connecting component 40 of the semiconductor device 10 is not used to connect the semiconductor module 20 and the capacitor 30a. Therefore, the number of components can be reduced, and the steps for joining the connecting component 40 can be reduced. Therefore, the increase in the manufacturing cost of the semiconductor device 10a can be suppressed.

[0100] [Third Implementation Method]

[0101] In the third embodiment, using Figure 11 The case in which the semiconductor module and the capacitor are connected by a connection mechanism different from that of the first embodiment and the second embodiment will be described. Figure 11 This is a cross-sectional view showing the connection mechanism included in the semiconductor device according to the third embodiment. Figure 11 Corresponding to the first embodiment Figure 5 A cross-sectional view of the semiconductor device. It should be noted that in the third embodiment, the same reference numerals are used to label the same structures as those in the semiconductor device 10 of the first embodiment and the semiconductor device 10a of the second embodiment, thereby simplifying or omitting their description.

[0102] Semiconductor device 10b includes semiconductor module 20 and capacitor 30b. Capacitor 30b includes a first connection terminal 32, a second insulating sheet 133, and a second connection terminal 34b. In this case, the second connection terminal 34b has a second conductive portion 341 and a second wiring portion 342b. However, the second wiring portion 342b of capacitor 30b extends parallel to the first wiring portion 322 of the first connection terminal 32 on the third side 31a side, in front of the third side 31a. Furthermore, the front surface of the second wiring portion 342b of the second connection terminal 34b forms the same plane as the front surface of the second power terminal 24 of semiconductor module 20. One end of connecting member 40 engages with the second bonding area 241 on the front surface of the second power terminal 24, and the other end of connecting member 40 engages with the third bonding area 343 on the front surface of the second wiring portion 342b. Thus, semiconductor module 20 and capacitor 30b are electrically connected.

[0103] Additionally, a second insulating sheet 133 extends from between the first connecting terminal 32 and the second connecting terminal 34b of the housing 31. It should be noted that... Figure 11 In this case, the second insulating sheet 133 extends along the front side of the first connecting terminal 32. Furthermore, the front end of the second insulating sheet 133 is located between the front end of the first connecting terminal 32 and the front end of the second connecting terminal 34b. This maintains the insulation between the first connecting terminal 32 and the second connecting terminal 34b. Moreover, a gap is formed between the front side of the first wiring portion 322 of the first connecting terminal 32 and the back side of the connecting member 40. Additionally, a third insulating sheet 41 is provided within this gap. That is, the third insulating sheet 41 is provided between the front end of the second insulating sheet 133 located between the front end of the first connecting terminal 32 and the front end of the second connecting terminal 34b, and the front end of the first insulating sheet 23. It should be noted that the third insulating sheet 41 is also made of the same material as the second insulating sheet 133. Furthermore, one end of the third insulating sheet 41 is bonded to the platform portion 28 of the first insulating sheet 23, and the other end of the third insulating sheet 41 is bonded to the front end of the second insulating sheet 133. A known adhesive is used for this bonding. The end of the third insulating sheet 41 on the semiconductor module 20 side is divided into a comb-like shape corresponding to the receiving areas 21c1, 21c2, and 21c3 of the semiconductor module 20 when viewed from above. The end of the third insulating sheet 41 on the capacitor 30b side is configured such that its width when viewed from above is the same as or wider than the width of the second insulating sheet 133. Through the second insulating sheet 133 and the third insulating sheet 41, the first connecting terminal 32 can be insulated relative to the second connecting terminal 34b, the connecting member 40, and the second power terminal 24. It should be noted that the second insulating sheet 133 can also be as follows: Figure 5 and Figure 10 The second insulating sheet 133 covers the first connecting terminal 32 and extends directly to the first insulating sheet 23. In this case, the end of the second insulating sheet 133 on the semiconductor module 20 side is connected to... Figure 5 and Figure 10 The second insulating sheet 33 is also comb-shaped. Furthermore, in this case, the third insulating sheet 41 is not required.

[0104] Such a semiconductor device 10b also connects the semiconductor module 20 and the capacitor 30b in the shortest possible way via the first connection terminal 32 and the connecting member 40. Therefore, the wiring length between the semiconductor module 20 and the capacitor 30b is also minimized. This reduces the inductance of the semiconductor device 10b. Furthermore, in this connection, the first connection terminal 32 and the connecting member 40 are arranged parallel to each other. Therefore, the current conducting through the first connection terminal 32 and the current conducting through the connecting member 40 are in opposite directions, and the magnetic fields generated by the respective currents are canceled out. This further reduces the inductance of the semiconductor device 10b.

[0105] [Fourth Implementation Method]

[0106] In the fourth embodiment, using Figure 12 The case in which the semiconductor module and the capacitor are connected by a connection mechanism different from that of the first to third embodiments will be described. Figure 12 This is a cross-sectional view showing the connection mechanism included in the semiconductor device according to the fourth embodiment. Figure 12 Corresponding to the first embodiment Figure 5 A cross-sectional view of the semiconductor device. It should be noted that in the fourth embodiment, the same reference numerals are used for components that are the same as those in the semiconductor devices 10, 10a, and 10b of the first to third embodiments, thereby simplifying or omitting their description.

[0107] Semiconductor device 10c includes semiconductor module 20 and capacitor 30c. Capacitor 30c includes a first connection terminal 132, a second insulating sheet 233, and a second connection terminal 34c. In this case, the first connection terminal 132 has a first conductive portion 321 and a first wiring portion 322a. The first wiring portion 322a extends parallel to the front surface of housing 31 on the third side 31a side, slightly exceeding the third side 31a. Furthermore, the first wiring portion 322a of the first connection terminal 132, when viewed from above, has a comb-like shape similar to the first connection terminal 32. The second connection terminal 34c extends upward from the front surface of housing 31. The front end face of the second connection terminal 34c forms a plane with the front surface of the second power terminal 24 of semiconductor module 20. Additionally, in semiconductor device 10c, a connecting member 43 is provided between the third side 31a of the housing 31 of capacitor 30c and the first power terminal 22 of semiconductor module 20. The back side of one end of the connecting member 43 is electrically connected to the first junction area 221 of the first power terminal 22. The front side of the other end of the connecting member 43 is electrically connected to the back side of the first wiring portion 322a of the first connection terminal 132. In addition, the connecting member 43 is connected to the first power terminals 22a, 22b, and 22c of the semiconductor module 20, respectively.

[0108] Furthermore, the second insulating sheet 233 extends from between the first connecting terminal 132 and the second connecting terminal 34c of the housing 31, covering the first connecting terminal 132 and the connecting member 43, and is connected to the platform portion 28 of the first insulating sheet 23 of the semiconductor module 20. Therefore, the insulation between the second connecting terminal 34c and the first connecting terminal 132 is maintained.

[0109] The connecting member 42 is generally L-shaped when viewed from the side and has a locking portion 42a and a third wiring portion 42b. The back side of one end of the third wiring portion 42b of the connecting member 42 engages with the second bonding area 241 on the front side of the second power terminal 24 of the semiconductor module 20. The locking portion 42a of the connecting member 42 hooks (locks) onto the second connection terminal 34c of the capacitor 30c, and engages with the side of the second connection terminal 34c. Figure 12 The fourth junction area 344 (on the left side of the image). Thus, the connecting member 42 electrically connects the second power terminal 24 of the semiconductor module 20 to the second connection terminal 34c of the capacitor 30c. Furthermore, such a connecting member 42 is provided for the second power terminals 24a, 24b, and 24c of the semiconductor module 20 respectively. At this time, a gap is formed between the back side of the connecting member 42 (third wiring portion 42b) and the front side of the first connection terminal 132 and the front side of the connecting member 43. The second insulating sheet 233 is disposed within this gap. Therefore, insulation between the connecting member 42 and the first connection terminal 132 and the connecting member 43, and insulation between the first connection terminal 132 and the connecting member 43 and the second power terminal 24 are maintained, respectively.

[0110] Such a semiconductor device 10c also connects the semiconductor module 20 and the capacitor 30c in the shortest possible way via the first connection terminal 132 and the connection member 43 and the connection member 42. In particular, the connection member 42 can be shorter than the connection member 40 in the first embodiment. Therefore, the wiring length between the semiconductor module 20 and the capacitor 30c can also be shorter. As a result, the inductance of the semiconductor device 10c can be further reduced. In addition, in this connection, the first connection terminal 132 and the connection member 43 are arranged parallel to the connection member 42. As a result, the current conducting the first connection terminal 132 and the connection member 43 is in the opposite direction to the current conducting the connection member 42, and the magnetic fields generated by the respective currents are canceled out. Therefore, the inductance of the semiconductor device 10c can be further reduced.

Claims

1. A semiconductor device, characterized in that, Including capacitors and semiconductor modules, The capacitor has a housing, a first connecting terminal, a second connecting terminal, and a flexible insulating member disposed between the first connecting terminal and the second connecting terminal. The housing includes a capacitor element, and the first connecting terminal, the flexible insulating member, and the second connecting terminal extend outward from the housing. The semiconductor module has a terminal stack formed by the sequential overlapping of a first power terminal, a first insulating component, and a second power terminal. The first power terminal has a first engagement area that is electrically connected to the first connection terminal. The second power terminal has a second engagement area that is electrically connected to the second connection terminal. The first insulating member has a platform portion that extends in a direction from the second bonding area toward the first bonding area when viewed from above. The terminal stack is disposed on the first side of the semiconductor module. The first connection terminal, the flexible insulating component, and the second connection terminal of the capacitor are arranged adjacent to the first side portion. One end of the main surface of the first connection terminal engages with the first engagement area of ​​the first power terminal. The semiconductor device further includes a connection component that electrically connects the third junction region of the second connection terminal to the second junction region of the second power terminal, wherein the second junction region and the third junction region are arranged parallel to the first junction region.

2. The semiconductor device according to claim 1, characterized in that, At least a portion of the current path from the second connection terminal to the second power terminal is parallel to the first connection terminal, passing through the flexible insulation member.

3. The semiconductor device according to claim 1 or 2, characterized in that, In the semiconductor module, The end of the first power terminal and the first engagement area are located outside the platform portion of the first insulating component, and the platform portion of the first insulating component is located outside the end of the second power terminal.

4. The semiconductor device according to claim 1, characterized in that, The thickness of the connecting component is thinner than the thickness of the second power terminal.

5. The semiconductor device according to claim 1, characterized in that, The semiconductor module has a plurality of terminal stacks disposed along the first side.

6. The semiconductor device according to claim 5, characterized in that, The edge of the first side of the flexible insulating component, when viewed from above, is a comb-like shape corresponding to the terminal stack.

7. The semiconductor device according to claim 6, characterized in that, At least one of the edges of the first side portion of the first connecting terminal and the second connecting terminal is comb-shaped when viewed from above.

8. The semiconductor device according to any one of claims 1, 4 to 7, characterized in that, The flexible insulating component extends outward from the housing in a longer length than the first connecting terminal extends outward from the housing.

9. The semiconductor device according to claim 8, characterized in that, The front end of the flexible insulating member is configured to face the platform portion of the first insulating member.

10. The semiconductor device according to claim 9, characterized in that, There is a gap between the platform portion and the front end of the flexible insulating component, or / and between the front end of the flexible insulating component and the connecting component.

11. The semiconductor device according to claim 9, characterized in that, The connecting component is L-shaped, with one end of the connecting component engaging with the edge region of the second power terminal, and the other end of the connecting component being connected to the second connection terminal.

12. The semiconductor device according to claim 1, characterized in that, The semiconductor device further includes a second insulating component, which engages with the front end of the flexible insulating component and the platform portion of the first insulating component, respectively, and is disposed in the gap between the first connecting terminal and the connecting component.

13. The semiconductor device according to claim 1, characterized in that, The first connection terminal has a first wiring portion disposed on the semiconductor module side. The second connection terminal has a second wiring portion disposed on the side opposite to the semiconductor module.

14. The semiconductor device according to claim 1, characterized in that, The distance from the front end of the first power terminal to the front end of the second power terminal is 3 mm or more and 14.5 mm or less.

15. The semiconductor device according to claim 1, characterized in that, The distance from the front end of the first connection terminal to the front end of the second power terminal is 6 mm or more and 12.5 mm or less.

16. The semiconductor device according to claim 1, characterized in that, The mating surface between the first connecting terminal and the first power terminal, the mating surface between the second connecting terminal and the edge of one side of the connecting member, and the mating surface between the edge of the other side of the connecting member and the second power terminal are parallel.

17. The semiconductor device according to claim 1, characterized in that, Laser welding marks are present in the first and second bonding areas.

Images