Packaging structure, packaging component and method for forming the same

By using multi-layer redistribution structure and local interconnect components in semiconductor packages, the problems of thermal expansion coefficient mismatch and warpage mismatch in semiconductor packages are solved, communication bandwidth and reliability are improved, and higher density and miniaturization are achieved. package.

CN113113382BActive Publication Date: 2024-12-24TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
CN202110060927.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-07-17
Filing Date
2021-01-18
Publication Date
2024-12-24
Estimated Expiration
2041-01-18

AI Technical Summary

Technical Problem

It is difficult for existing semiconductor packaging technologies to achieve high-density integration and miniaturization, especially in stacked packaging (PoP) technology, where thermal expansion coefficient mismatch and warpage mismatch are problems, affecting the reliability of the packaging and communication bandwidth.

Method used

Using a multi-layer redistribution structure, including a dielectric layer and a metallization layer, local interconnect components are embedded to provide electrical connections, and the interposer layer is reduced through solderless connections, eliminating thermal expansion coefficient mismatch, and improving communication bandwidth.

Benefits of technology

It improves the communication bandwidth and reliability between integrated circuit dies, reduces the mismatch of thermal expansion coefficients of the package structure, and enhances the stability and flexibility of the package.

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Abstract

In an embodiment, a structure includes: a core substrate; a coupled redistribution structure, the redistribution structure including a plurality of redistribution layers, the plurality of redistribution layers including a dielectric layer and a metallization layer, the redistribution structure also including a first local interconnect component embedded in a first redistribution layer of the plurality of redistribution layers, the first local interconnect component including a conductive connector bonded to a metallization pattern of the first redistribution layer, the dielectric layer of the first redistribution layer sealing the first local interconnect component; a first integrated circuit die coupled to the redistribution structure; a second integrated circuit die coupled to the redistribution structure, the interconnect structure of the first local interconnect component electrically coupling the first integrated circuit die to the second integrated circuit die; and a set of conductive connectors coupled to a second side of the core substrate. Embodiments of the present application also relate to a package structure, a package, and a method of forming the same.
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