Display device and method of manufacturing the same

Abstract

Disclosed is a display device and a method of manufacturing the same. The display device includes a substrate including a pixel region and a transmissive region between the pixel region, a pixel circuit layer including at least one transistor located in each of the pixel regions, and a light emitting element layer located on the pixel circuit layer and including at least one light emitting element located at each of the pixel regions and bonded to the at least one transistor and a transparent organic layer located at the transmissive region, wherein the light emitting element layer further includes a first electrode located at the pixel region, a first inorganic layer located at the first electrode, an organic layer covering the first inorganic layer and the transparent organic layer, and a second inorganic layer located on the organic layer.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0176610, filed on December 27, 2019, the disclosure of which is hereby incorporated by reference in its entirety. Technical Field

[0002] Aspects of some example embodiments of the present disclosure relate to a display device and a method of manufacturing the display device. Background Art

[0003] A display device may have various types of sensors. For example, a display device may use an optical sensor to identify an object and a camera to capture pictures and moving images. A full display technology may be used, which is configured to display an image on the entire front surface of the display device by minimizing or removing the bezel of the front surface of the display device and rearranging the sensors on the front surface.

[0004] The display panel may include a transmissive window (or a transmissive component) positioned between the light-emitting pixels and configured to transmit light, and the sensor below the display panel may sense a signal passing through the transmissive window.

[0005] The sensitivity of the sensor can be changed according to the transmittance of the transmission window, and the cathode electrode of the pixel inside the transmission window can be removed to improve the sensitivity of the sensor.

[0006] Laser can be used to remove the cathode electrode of the pixel inside the transmissive window, but the transmissive window will not have a sufficient area due to the laser margin (ie, the margin used to prevent the laser from damaging adjacent pixel circuits).

[0007] The above information disclosed in this Background section is only for enhancement of understanding of the background and therefore the information discussed in this Background section does not necessarily constitute prior art. Summary of the Invention

[0008] Aspects of some example embodiments of the present disclosure relate to a display device including a transmissive window having a sufficient area and a method of manufacturing the display device.

[0009] Characteristics of the embodiments according to the present disclosure are not limited to the above-mentioned characteristics, and other technical characteristics not mentioned will be more easily understood by those having ordinary skill in the art from the following description.

[0010] According to some example embodiments of the present disclosure, a display device may include: a substrate including pixel regions and a transmissive region located between the pixel regions; a pixel circuit layer including at least one transistor located in each of the pixel regions; and a light-emitting element layer located on the pixel circuit layer and including at least one light-emitting element located in each of the pixel regions and coupled to the at least one transistor, and a transparent organic layer located in the transmissive region. The light-emitting element layer may further include: a first electrode located in the pixel region; a first inorganic layer located on the first electrode; an organic layer configured to cover the first inorganic layer and the transparent organic layer; and a second inorganic layer located on the organic layer.

[0011] According to some example embodiments, the first electrode and the first inorganic layer may not overlap with the transparent organic layer, and the first electrode and the first inorganic layer may be spaced apart from the transparent organic layer in a plan view.

[0012] According to some example embodiments, a side of the first electrode facing the transparent organic layer may include a straight line.

[0013] According to some example embodiments, a first edge of the first electrode may be closer to the transparent organic layer than a second edge of the first inorganic layer, and a portion of the first electrode exposed by the first inorganic layer may contact the organic layer.

[0014] According to some example embodiments, a distance between a first edge of the first electrode and a second edge of the first inorganic layer may be equal to or similar to a thickness of the first electrode.

[0015] According to some example embodiments, the light-emitting element layer may further include: a second electrode located on the pixel circuit layer; a pixel defining layer located on the second electrode and configured to expose the second electrode; and an emission layer overlapping the second electrode exposed by the pixel defining layer, and the first electrode, the second electrode and the emission layer may construct at least one light-emitting element.

[0016] According to some example embodiments, a height of an upper surface of the transparent organic layer may be equal to a height of the pixel defining layer with respect to the substrate.

[0017] According to some example embodiments, a height of an upper surface of the transparent organic layer may be lower than a height of the pixel defining layer with respect to the substrate.

[0018] According to some example embodiments, a height of an upper surface of the transparent organic layer may be higher than a height of the pixel defining layer with respect to the substrate.

[0019] According to some example embodiments, the substrate may further include a first region and a second region. In the first region, the pixel regions of the substrate may be arranged in a grid shape to be separated from each other, and the transmissive region may be positioned between the separated pixel regions. In the second region, the pixel regions of the substrate may be adjacent to each other.

[0020] According to some example embodiments, the first electrode may be continuously formed in the pixel region, and a thickness of the first electrode may be uniform throughout the entire pixel region.

[0021] According to some example embodiments, the first inorganic layer may include inorganic patterns separated from each other, and the inorganic patterns may be respectively located at the pixel regions.

[0022] According to some example embodiments, the refractive index of the transparent organic layer may be in the range of 1.5 to 1.7.

[0023] According to some example embodiments, the first electrode and the first inorganic layer may not overlap the transparent organic layer, and a first edge of the first electrode may coincide with an edge of the transparent organic layer in a plan view.

[0024] According to some example embodiments, the second edge of the first inorganic layer may be spaced apart from the transparent organic layer in a plan view.

[0025] According to some example embodiments, a first side of the first electrode facing the transparent organic layer and a second side of the first inorganic layer facing the transparent organic layer may be positioned on the same surface as a side of the transparent organic layer.

[0026] According to some example embodiments, the first electrode may partially overlap the transparent organic layer, and the first inorganic layer may not overlap the transparent organic layer.

[0027] According to some example embodiments of the present disclosure, in a method for manufacturing a display device, the method may include the following steps: preparing a panel, the panel including a plurality of insulating layers located on a substrate, at least one transistor formed between the plurality of insulating layers in each of the pixel regions of the substrate, and a groove formed by penetrating at least one of the plurality of insulating layers in a transmission region of the substrate, the transmission region being positioned between the pixel regions; forming a dummy pattern on the plurality of insulating layers along an edge of the transmission region; forming a transparent organic layer in the groove of the transmission region; forming a photoresist on the transparent organic layer; eliminating the dummy pattern; forming a light-emitting element on the substrate; forming a first inorganic layer on the entire substrate; and stripping the photoresist.

[0028] According to some example embodiments, the method may further include forming an organic layer configured to cover the first inorganic layer and the transparent organic layer exposed by stripping the photoresist; and forming a second inorganic layer on the organic layer.

[0029] According to some example embodiments, forming a light emitting element may include the following steps: forming an emission layer in a pixel region; and forming a first electrode on the entire substrate using a chemical vapor deposition technique. The first electrode may be discontinuous between the transmission region and the pixel region by a photoresist.

[0030] Further details according to some example embodiments are included in the detailed description and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 are views illustrating a display device according to some example embodiments.

[0032] Figure 2 is a diagram illustrating a method according to some example embodiments Figure 1 A cross-sectional view of an example of a display device.

[0033] Figure 3 yes Figure 1 Magnified view of area Q.

[0034] Figure 4 It shows that along Figure 3 1 is a cross-sectional view of an example of a display device taken along line II'.

[0035] Figure 5 It shows that the Figure 4 A plan view of an example of a first electrode in a display device.

[0036] Figures 6A to 6J are views for explaining a method of manufacturing a display device according to some example embodiments.

[0037] Figure 7A and Figure 7B It shows that along Figure 3 FIG. 1 is a cross-sectional view of another example of a display device taken along line II′.

[0038] Figure 8A It shows that along Figure 3 FIG. 1 is a cross-sectional view of another example of a display device taken along line II′.

[0039] Figure 8B and Figure 8C Is used to explain the manufacturing Figure 8A A view of a display apparatus and method.

[0040] Figure 9A and Figure 9B It shows that along Figure 3 FIG. 1 is a cross-sectional view of another example of a display device taken along line II′.

[0041] Figure 10A It shows that along Figure 3 FIG. 1 is a cross-sectional view of another example of a display device taken along line II′.

[0042] Figure 10B and Figure 10C Is used to explain the manufacturing Figure 10A A view of a display apparatus and method. DETAILED DESCRIPTION

[0043] Other characteristics and features of some example embodiments of the present disclosure and methods for implementing them will become clearer with reference to the embodiments described in more detail later and the accompanying drawings. However, embodiments according to the present disclosure are implemented in various forms and are not limited to the embodiments to be described later, and these embodiments are provided so that the present disclosure will be thorough and complete and will fully convey the scope of the present disclosure to those skilled in the art. Embodiments according to the present disclosure should be limited by the scope of the appended claims and their equivalents.

[0044] The case where an element or layer is specified as being positioned or arranged “on” another element or layer may include all cases where additional layers or elements are interposed therebetween. Throughout the specification, the same reference numerals are used to designate the same components.

[0045] Although the terms "first" and "second" are used to describe various components, it is obvious that those components are not limited by the terms. These terms are only used to distinguish one component from another. Therefore, it is obvious that the first component to be described below may also be the second component without departing from the technical spirit of the present disclosure. In the present disclosure, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form.

[0046] In the following, further details and features of some exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. Throughout the drawings, the same or similar reference numerals are used to indicate the same components.

[0047] Figure 1 is a diagram illustrating a display device according to some example embodiments. Figure 1 , a display panel DP provided in a display device DD is shown. According to some example embodiments, Figure 1 The structure of the display panel DP based on the display area DA is schematically shown in . However, at least one driver (eg, a scan driver and a data driver) and / or a plurality of lines may also be positioned in the display panel DP.

[0048] Reference Figure 1 , the display device DD may include a substrate SUB and pixels PXL1 and PXL2 positioned on the substrate SUB.

[0049] The substrate SUB may configure a base member of the display panel DP.

[0050] According to some example embodiments, the substrate SUB may be a rigid substrate or a flexible substrate, and the material or properties of the substrate SUB are not limited to any particular material or properties. For example, the substrate SUB may be a rigid substrate constructed of glass or tempered glass, or a flexible substrate constructed of plastic or a thin film made of metal. Furthermore, the substrate SUB may be a transparent substrate, but is not limited thereto.

[0051] One area on the substrate SUB can be defined as a display area DA, with the pixels PXL1 and PXL2 positioned within the display area DA, and the remaining area can be defined as a non-display area NDA. For example, the substrate SUB can include the display area DA, which includes a pixel region in which the pixels PXL1 and PXL2 are formed, and a non-display area NDA positioned outside the display area DA. The pixels PXL1 and PXL2 and / or various types of lines of embedded circuitry coupled to the display area DA can be positioned within the non-display area NDA.

[0052] According to some example embodiments, the display area DA may be positioned in the center of the display panel DP, and the non-display area NDA may be positioned along the edge of the display panel DP to surround the display area DA. However, the positions of the display area DA and the non-display area NDA are not limited to this example, and the positions of the display area DA and the non-display area NDA may be variously changed.

[0053] According to some example embodiments, the display area DA (or substrate SUB) may include a first area A1 (or a first display area) and a second area A2 (or a second display area). The first area A1 and the second area A2 may be distinguished based on the resolution (or resolution and density per unit area) of the pixels PXL1 and PXL2, and the resolution of the first pixel PXL1 within the first area A1 may be lower than the resolution of the second pixel PXL2 within the second area A2.

[0054] like Figure 1 As shown in FIG, the first area A1 may be positioned in the upper side of the display panel DP, but this is an example. The position and size (or area) of the first area A1 may be determined according to the sensor (eg, Figure 2 Make various changes to the UPS in the system.

[0055] Figure 2 It shows Figure 1 A cross-sectional view of an example of a display device. Figure 2 , a display panel DP provided in a display device DD is shown.

[0056] Reference Figure 2, the display panel DP may include a substrate SUB (or base layer), a pixel circuit layer PCL and a light emitting element layer LDL.

[0057] The pixel circuit layer PCL on the substrate SUB may include a plurality of insulating layers, transistors formed between the plurality of insulating layers, and wires coupled to the transistors.

[0058] The light emitting element layer LDL positioned on the pixel circuit layer PCL may include a light emitting element.

[0059] The sensor UPS can be positioned below the substrate SUB. Figure 2 As shown in FIG, the sensor UPS may be positioned below the first area A1 of the substrate SUB.

[0060] According to some example embodiments, the sensor UPS may be an optical sensor. The sensor UPS may include, for example, a fingerprint sensor, an image sensor, a camera, a flash, an optical sensor, an illumination sensor, a proximity sensor, an RGB sensor, an infrared sensor, and the like. However, the sensor UPS is not limited to these examples. For example, the sensor UPS may include various sensors such as an ultrasonic sensor, a microphone, an environmental sensor (e.g., a barometer, a hygrometer, a thermometer, a radioactivity sensor, a heat sensor, and the like), a chemical sensor (e.g., a gas sensor, a dust sensor, an odor sensor, and the like), and the like.

[0061] According to some example embodiments, the display panel DP may include an optical path LTP (or light transmission path) formed by penetrating the pixel circuit layer PCL and the light-emitting element layer LDL. In the optical path LTP, only a plurality of insulating layers are provided, and conductive elements (e.g., wires, transistor electrodes, conductive patterns, light-emitting element electrodes, etc.) may not be positioned in the optical path LTP. In addition, a material with high light transmittance may also be positioned in the optical path LTP.

[0062] According to some example embodiments, a material having a refractive index different from that of the insulating layer may be positioned in the optical path LTP. For example, a transparent organic layer having a higher refractive index than the insulating layer may be positioned in the optical path LTP. In this case, light (or a signal) emitted from the sensor UPS and traveling in the third direction DR3 is totally reflected between the transparent organic layer and the insulating layer (i.e., at the edge of the optical path LTP), increasing the amount of light emitted from or received by the sensor UPS, thereby improving the sensitivity of the sensor UPS.

[0063] According to some example embodiments, a transparent organic layer disposed in the light path LTP may be formed of a single layer including acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc., and may have a refractive index ranging from 1.5 to 1.7, for example.

[0064] Figure 3 yes Figure 1 Magnified view of area Q.

[0065] Reference Figure 3 , the first area A1 may include a pixel area PA (or emission area) and a transmission area TA, and the second area A2 may include only the pixel area PA. Here, the sub-pixel SPX may be arranged in the pixel area PA, and the sub-pixel SPX may not be arranged in the transmission area TA. Each sub-pixel SPX may be arranged with reference to Figure 1 The pixels PXL1 and PXL2 are described as being identical, but not limited thereto, and two or more sub-pixels SPX may be included in each of the pixels PXL1 and PXL2 .

[0066] In the first area A1, the pixel areas PA have a grid shape and may be arranged to be spaced apart from each other. For example, first reference lines L_H1, L_H2, and L_H3 extending in the first direction DR1 may be arranged to be spaced apart from each other along the second direction DR2, and second reference lines L_V1, L_V2, L_V3, and L_V4 extending in the second direction DR2 may be arranged to be spaced apart from each other along the first direction DR1. The pixel areas PA and the transmissive areas TA may be alternately positioned in areas demarcated by the first reference lines L_H1, L_H2, and L_H3 and the second reference lines L_V1, L_V2, L_V3, and L_V4.

[0067] In the second area A2, the pixel areas PA may be positioned adjacent to each other. Therefore, the density of the pixel areas PA (or sub-pixels SPX) in the first area A1 is lower than the density of the pixel areas PA (or sub-pixels SPX) in the second area A2. For example, the density of the pixel areas PA in the first area A1 may be 1 / 2 of the density of the pixel areas PA in the second area A2.

[0068] However, the density is not limited to this example, for example, the density of the pixel areas PA in the first area A1 may be 1 / 4 of the density of the pixel areas PA in the second area A2, in which case the pixel areas PA in the first area A1 are arranged in the form of islands, and each of the pixel areas PA may be surrounded by the transmission area TA.

[0069] Figure 4 It shows that along Figure 3 1 is a cross-sectional view of an example of a display device taken along line II'.

[0070] Reference Figures 2 to 4 The pixel circuit layer PCL may include a buffer layer BFL, a semiconductor layer, a first insulating layer INS1, a first conductive layer, a second insulating layer INS2, a second conductive layer and a protection layer PSV. Figure 4As shown in FIG, in the pixel area PA, a buffer layer BFL, a semiconductor layer, a first insulating layer INS1, a first conductive layer, a second insulating layer INS2, a second conductive layer, and a protection layer PSV may be sequentially stacked on a substrate SUB (or base layer).

[0071] A buffer layer (BFL) may be formed or disposed over the entire surface of the substrate (SUB). The BFL may prevent the diffusion of impurity ions, prevent or reduce the penetration of moisture, external air, or contaminants, and perform surface planarization. The BFL may include silicon nitride, silicon oxide, silicon oxynitride, or the like. The BFL may be omitted depending on the type of substrate (SUB), manufacturing conditions, and other factors.

[0072] The semiconductor layer may be positioned on the buffer layer BFL (or substrate SUB) and may include a semiconductor pattern SCL. The semiconductor layer may be an active layer that configures a channel of the transistor TR. The semiconductor layer may include a source region and a drain region that contact a first transistor electrode (or source electrode) and a second transistor electrode (or drain electrode) to be described later. The region between the source region and the drain region may be a channel region.

[0073] The semiconductor layer may include an oxide semiconductor. The channel region of the semiconductor pattern SCL is a semiconductor pattern not doped with impurities and may be an intrinsic semiconductor. The source region and the drain region may be semiconductor patterns doped with impurities. For example, n-type impurities may be used as impurities.

[0074] The first insulating layer INS1 (or gate insulating layer) may be positioned on the semiconductor layer and the buffer layer BFL (or substrate SUB). The first insulating layer INS1 may generally be formed to extend over the entire surface of the substrate SUB. The first insulating layer INS1 may be a gate insulating layer having a gate insulating function.

[0075] The first insulating layer INS1 may include an inorganic insulating material such as a silicon compound, a metal oxide, or the like. For example, the first insulating layer INS1 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, or a combination thereof. The first insulating layer INS1 may have a single-layer structure or a multi-layer structure including stacked layers of different materials.

[0076] The first conductive layer may be positioned on the first insulating layer INS1. The first conductive layer may include a gate electrode GE (or a first conductive pattern). Furthermore, the first conductive layer may further include a gate electrode GE coupled to a transistor or a line (e.g., a scan line and a gate line) configuring the gate electrode GE, a capacitor electrode, and the like.

[0077] The gate electrode GE is arranged to overlap the semiconductor pattern SCL and may configure a gate electrode of the transistor TR.

[0078] The first conductive layer may include one or more types of metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The first conductive layer may have a single-layer structure or a multi-layer structure.

[0079] A second insulating layer INS2 (or interlayer insulating layer) may be formed on the first conductive layer and may generally be positioned over the entire surface of the substrate SUB. The second insulating layer INS2 functions to insulate the first conductive layer from the second conductive layer and may be an interlayer insulating layer.

[0080] The second insulating layer INS2 may include an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, hafnium oxide, aluminum oxide, titanium oxide, tantalum oxide, zinc oxide, etc., or an organic insulating material such as polyacrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, benzocyclobutene (BCB), etc. The second insulating layer INS2 may have a single-layer structure or a multi-layer structure including stacked layers of different materials.

[0081] The second conductive layer may be positioned on the second insulating layer INS2. The second conductive layer may include a first transistor electrode SE (or a second conductive pattern) and a second transistor electrode DE (or a third conductive pattern). Furthermore, the second conductive layer may further include a line (e.g., a data line) or a power line coupled to at least one of the first transistor electrode SE and the second transistor electrode DE.

[0082] The first transistor electrode SE overlaps a partial region of the semiconductor pattern SCL (eg, a source region of the transistor TR) and may contact a partial region of the semiconductor pattern SCL exposed by the contact hole. The first transistor electrode SE may constitute a first electrode (eg, a source electrode) of the transistor TR.

[0083] Similarly, the second transistor electrode DE overlaps a portion of the semiconductor pattern SCL (eg, the drain region of the transistor TR) and may contact a portion of the semiconductor pattern SCL exposed by the contact hole. The second transistor electrode DE may constitute a second electrode (eg, a drain electrode) of the transistor TR.

[0084] Similar to the first conductive layer, the second conductive layer may include one or more types of metals selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The second conductive layer may have a single-layer structure or a multi-layer structure.

[0085] A protective layer PSV (or a third insulating layer) may be positioned on the second conductive layer. The protective layer PSV provides a planarized surface and may include an organic insulating layer, an inorganic insulating layer, or an organic insulating layer positioned on an inorganic insulating layer.

[0086] The first transistor electrode SE is formed in the protection layer PSV through a contact hole exposed therethrough, and the first transistor electrode SE may be coupled to the second electrode AE ​​of the light emitting element layer LDL through the contact hole.

[0087] According to some example embodiments, in the transmission area TA, the pixel circuit layer PCL may include only the buffer layer BFL, the first insulating layer INS1, and the second insulating layer INS2 sequentially disposed on the substrate SUB. That is, in the transmission area TA, the semiconductor pattern SCL of the semiconductor layer, the conductive pattern of the first conductive layer, and the conductive pattern of the second conductive layer may not be included in the pixel circuit layer PCL.

[0088] According to some example embodiments, in the transmission area TA, the pixel circuit layer PCL may include a groove formed by penetrating at least one of the plurality of insulating layers. Figure 4 As shown in FIG, in the transmission area TA, the protection layer PSV may include a groove configured to expose the second insulating layer INS2.

[0089] The light-emitting element layer LDL is positioned on the protective layer PSV, and the light-emitting element layer LDL may include a pixel defining layer PDL and a light-emitting element LD arranged in the pixel area PA. Moreover, the light-emitting element layer LDL may further include a transparent organic layer TOL arranged in the transmission area TA. The transmission area TA may be defined by the transparent organic layer TOL. For example, the transmission area TA is an area in which the transparent organic layer TOL is arranged, and the edge of the transmission area TA may coincide with the edge of the upper surface of the transparent organic layer TOL. In addition, the light-emitting element layer LDL may further include a first inorganic layer IOL1 (or a first inorganic encapsulation layer) arranged in the pixel area PA, an organic layer OL (or an organic encapsulation layer) arranged on the entire surface of the substrate SUB, and a second inorganic layer IOL2 (or a second inorganic encapsulation layer). Here, the first inorganic layer IOL1, the organic layer OL, and the second inorganic layer IOL2 may constitute a thin film encapsulation layer TFE, which is configured to protect the light-emitting element LD from external moisture, foreign substances, and the like.

[0090] Hereinafter, the light emitting element layer LDL in the pixel area PA will be described first, and then the light emitting element layer LDL in the transmission area TA will be described.

[0091] The second electrode AE ​​may be positioned on the protection layer PSV. The second electrode AE ​​may be coupled to the first transistor electrode SE through a through hole (eg, a via hole) penetrating the protection layer PSV.

[0092] The pixel defining layer PDL includes an opening that may define a light emitting region of each of the sub-pixels SPX. The opening of the pixel defining layer PDL may expose at least a portion of the second electrode AE. The pixel defining layer PDL may include an organic material.

[0093] The light emitting element LD may include a second electrode AE, an emission layer EL positioned on the second electrode AE, and a first electrode CE positioned on the emission layer EL. For example, the light emitting element LD may be an organic light emitting diode.

[0094] One of the second electrode AE ​​and the first electrode CE may be an anode electrode, and the other may be a cathode electrode. For example, the second electrode AE ​​may be an anode electrode, and the first electrode CE may be a cathode electrode. The second electrode AE ​​may be a reflective electrode, and the first electrode CE may be a transmissive electrode.

[0095] The second electrode AE ​​may include a reflective layer capable of reflecting light and a transparent conductive layer positioned above or below the reflective layer. At least one of the transparent conductive layer and the reflective layer may be in contact with the first transistor electrode SE.

[0096] The reflective layer may include a material capable of reflecting light. For example, the reflective layer may include at least one of aluminum (Al), silver (Ag), chromium (Cr), molybdenum (Mo), platinum (Pt), nickel (Ni), and alloys thereof.

[0097] The transparent conductive layer may include a transparent conductive oxide. For example, the transparent conductive layer may include at least one type of transparent conductive oxide selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), gallium-doped zinc oxide (GZO), zinc tin oxide (ZTO), gallium tin oxide (GTO), and fluorine-doped tin oxide (FTO).

[0098] The emission layer EL may be positioned on the exposed surface of the second electrode AE. The emission layer EL may have a multilayer thin film structure including at least a light generating layer. For example, the emission layer EL may include a hole injection layer, a hole transport layer, a light generating layer, a hole blocking layer, an electron transport layer, and an electron injection layer, wherein the hole injection layer is configured to inject holes, the hole transport layer has excellent hole transport properties and is used to increase the possibility of recombination of holes and electrons by hindering the movement of unbound electrons in the light generating layer, the light generating layer is configured to emit light by recombination of injected electrons and holes, the hole blocking layer is used to hinder the movement of unbound holes in the light generating layer, the electron transport layer is used to smoothly transport electrons to the light generating layer, and the electron injection layer is used to inject electrons.

[0099] The color of light generated in the light generation layer may be one of red, green, blue, and white, but is not limited thereto. For example, the color of light generated in the light generation layer of the emission layer EL may be one of magenta, cyan, and yellow.

[0100] The first electrode CE may be positioned on the emission layer EL. The first electrode CE may be a transflective layer. For example, the first electrode CE may be a thin metal layer having a thickness sufficient to transmit light. The first electrode CE may transmit a portion of the light generated in the light generation layer and reflect the remaining portion of the light generated in the light generation layer.

[0101] The first electrode CE may include a material having a lower work function than the transparent conductive layer. For example, the first electrode CE may include at least one of molybdenum (Mo), tungsten (W), silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), and alloys thereof.

[0102] Part of the light emitted from the emission layer EL may not transmit the first electrode CE, and the light reflected from the first electrode CE may be reflected again from the reflective layer. That is, the light emitted from the emission layer EL may resonate between the reflective layer and the first electrode CE. The light extraction efficiency of the OLED can be improved by the light resonance.

[0103] The distance between the reflective layer and the first electrode CE may be different according to the color of the light generated in the light generation layer. That is, according to the color of the light generated in the light generation layer, the distance between the reflective layer and the first electrode CE may be adjusted to match the resonance distance.

[0104] According to some example embodiments, the first electrode CE does not overlap the transmission area TA (or the transparent organic layer TOL) and may be spaced apart from the transmission area TA (or the transparent organic layer TOL) in a plan view (or when viewed from a top plan view).

[0105] To explain the arrangement of the first electrode CE viewed from a top view, reference may be made to Figure 5 .

[0106] Figure 5 It shows that the Figure 4 A plan view of an example of a first electrode in a display device.

[0107] Reference Figure 5 , the first electrode CE may be continuously formed in the pixel area PA.

[0108] For example, the first electrode CE may be positioned in the first pixel area PA1 , may extend in the second direction DR2 along edges of the transmission areas TA between the transmission areas TA, and may be continuously formed in the pixel area PA adjacent to the first pixel area PA1 .

[0109] As will be shown later, since the first electrode CE is formed through a single process (eg, a single chemical deposition process), the first electrode CE may have a uniform thickness throughout the entire pixel area PA (and a connection portion between the pixel areas PA).

[0110] According to some example embodiments, the first electrode CE may be spaced apart from the edge of the transmission area TA (i.e., the transparent organic layer TOL) by a constant distance. In order to reduce the total resistance of the first electrode CE while maximizing the area of ​​the transmission area TA, the first electrode CE may be spaced apart from the edge of the transmission area TA by a fixed distance.

[0111] According to some example embodiments, each of the side edges of the first electrode CE facing the transmission area TA may be a straight line. For example, one side of the first electrode CE positioned in the first direction DR1 based on the first pixel area PA1 may be parallel to the second reference line L_V2. For example, the other side of the first electrode CE positioned in the second direction DR2 based on the first pixel area PA1 may be parallel to the first reference line L_H1.

[0112] At the same time, despite Figure 5 The transmission area TA is shown as having a flat rectangular shape and the first electrode CE is shown as having straight sides, but they are not limited thereto. For example, when the transmission area TA has a flat circular shape, the first electrode CE may be spaced apart from the transmission area TA by a uniform distance and may have flat circular sides (or holes) corresponding to the transmission area TA. In another example, when the transmission area TA has a flat polygonal shape, the first electrode CE may be spaced apart from the transmission area TA by a uniform distance and may have flat polygonal sides (or holes) corresponding to the transmission area TA.

[0113] Refer again Figure 4 , the first inorganic layer IOL1 may be positioned on the first electrode CE.

[0114] The first inorganic layer IOL1 may be made of an inorganic insulating material such as polysiloxane, silicon nitride, silicon oxide, silicon oxynitride, or the like.

[0115] According to some example embodiments, the first inorganic layer IOL1 does not overlap the transmission area TA (or the transparent organic layer TOL) and may be spaced apart from the transmission area TA (or the transparent organic layer TOL) in a plan view.

[0116] According to some example embodiments, the second edge EG2 of the first inorganic layer 10L1 may be farther from the transmission area TA (or the transparent organic layer T01) than the first edge EG1 of the first electrode CE. In other words, the first edge EG1 of the first electrode CE may be closer to the transmission area TA (or the transparent organic layer TOL) than the second edge EG2 of the first inorganic layer 10L1. An edge portion of the first electrode CE may be exposed by the first inorganic layer 10L1.

[0117] According to some example embodiments, a distance between the first edge EG1 of the first electrode CE and the second edge EG2 of the first inorganic layer IOL1 (eg, a distance in the first direction DR1) may be equal to or similar to a thickness of the first electrode CE (eg, a thickness in the third direction DR3).

[0118] Will refer to it later Figures 6A to 6JThe relationship between the arrangement of the first edge EG1 of the first electrode CE and the arrangement of the second edge EG2 of the first inorganic layer IOL1 is described.

[0119] According to some example embodiments, the first inorganic layer IOL1 may be individually disposed in each of the pixel areas PA.

[0120] Reference Figure 5 , the first inorganic layer IOL1 includes inorganic patterns IOL_P that are separated from each other, and the inorganic patterns IOL_P may be arranged in corresponding pixel areas PA.

[0121] According to some example embodiments, the distance between the second edge EG2 of the first inorganic layer IOL1 (or the inorganic pattern IOL_P) and the first edge EG1 of the first electrode CE may be constant. Furthermore, when the side of the first electrode CE is a straight line, the side of the first inorganic layer IOL1 may also be a straight line.

[0122] Refer again Figure 4 , the organic layer OL and the second inorganic layer 10L2 may be sequentially disposed on the first inorganic layer 10L 1. Since the edge portion of the first electrode CE is exposed by the first inorganic layer 10L 1, the edge portion of the first electrode CE may contact the organic layer OL.

[0123] The organic layer OL can be made of an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorocarbon such as polytetrafluoroethylene, a benzocyclobutene compound, etc. Similar to the first inorganic layer IOL1, the second inorganic layer IOL2 can be made of an inorganic insulating material such as polysiloxane, silicon nitride, silicon oxide, silicon oxynitride, etc.

[0124] Meanwhile, in the transmission area TA, the pixel defining layer PDL may include a hole exposing the second insulating layer INS2 (or the protective layer PSV), and the hole of the pixel defining layer PDL may overlap with the hole of the protective layer PSV.

[0125] In the transmission area TA, the hole of the protection layer PSV and the hole of the pixel defining layer PDL may be filled with the transparent organic layer TOL.

[0126] As reference Figure 4 As described, the transparent organic layer TOL may be formed of a single layer including acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc., and the transparent organic layer TOL may have a refractive index in the range of 1.5 to 1.7.

[0127] According to some example embodiments, a height of an upper surface of the transparent organic layer TOL may be equal to a height of the pixel defining layer PDL with respect to the substrate SUB.

[0128] like Figure 4 As shown in FIG, the thickness H1 of the transparent organic layer TOL may be equal to the total thickness H2 of the protective layer PSV and the pixel defining layer PDL. However, the thickness is not limited to this example, and the thickness H1 of the transparent organic layer TOL may be less than or greater than the total thickness H2 of the protective layer PSV and the pixel defining layer PDL.

[0129] In the transmission area TA, the organic layer OL is positioned directly on the transparent organic layer TOL, and the second inorganic layer IOL2 may be positioned on the organic layer OL.

[0130] That is, in the transmissive area TA, the light-emitting element layer LDL includes only the transparent organic layer TOL, the organic layer OL, and the second inorganic layer IOL2 stacked sequentially, and the first electrode CE and the first inorganic layer IOL1 may not be included in the light-emitting element layer LDL. Compared to a case where the first electrode CE and the first inorganic layer IOL1 are arranged in the transmissive area TA, the transmittance (e.g., light transmittance) of the transmissive area TA can be improved. Moreover, the transparent organic layer TOL having a refractive index in the range of 1.5 to 1.7 can further improve the light output efficiency (and light receiving efficiency) of the transmissive area TA.

[0131] Figures 6A to 6J is a view for explaining a method of manufacturing a display device according to some example embodiments. Figures 6A to 6J In the figure, it is shown that Figure 4 and Figure 5 The corresponding view.

[0132] Reference Figure 4 and Figure 6A , a panel on which a plurality of insulating layers INS1 and INS2, a protective layer PSV, and a pixel defining layer PDL positioned on a substrate SUB are formed can be prepared. The panel may include a transistor TR and a second electrode AE ​​formed in a pixel area PA. In a transmission area TA of the panel, a groove penetrating at least one of the plurality of insulating layers INS1 and INS2, the protective layer PSV, and the pixel defining layer PDL may be formed. Figure 6A As shown in FIG, in the transmission area TA, the protection layer PSV may include a first hole OP1 (or first opening) configured to expose the second insulating layer INS2, and the pixel defining layer PDL may include a second hole OP2 (or second opening) overlapping the first hole OP1.

[0133] Then, a dummy pattern MP may be formed on the pixel defining layer PDL.

[0134] Reference Figure 6B and Figure 6CA dummy pattern MP may be formed on the pixel defining layer PDL within the pixel area PA along the edge of the transmissive area TA. The dummy pattern MP may include a transparent conductive oxide. For example, the dummy pattern MP may include at least one of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), gallium-doped zinc oxide (GZO), zinc tin oxide (ZTO), gallium tin oxide (GTO), and fluorine-doped tin oxide (FTO). For example, the dummy pattern MP may be formed by wet etching.

[0135] like Figure 6C As shown in FIG, the dummy pattern MP may have a grid shape. The dummy pattern MP may generally include first thin lines extending in a first direction DR1 along first reference lines L_H1 and L_H2 and second thin lines extending in a second direction DR2 along second reference lines L_V1 and L_V2. The first and second thin lines may have a constant width.

[0136] The height of the dummy pattern MP may be variously changed according to the embodiment, but the height of the dummy pattern MP is greater than that of the reference pattern MP. Figure 4 The total thickness of the first electrode CE and the first inorganic layer IOL1 is described to be large. For example, the height of the dummy pattern MP may be greater than twice the total thickness of the first electrode CE and the first inorganic layer IOL1.

[0137] Then, a transparent organic layer TOL may be formed in the transmission area TA (and the pixel area PA).

[0138] Reference Figure 6D , the transparent organic layer TOL may fill the first hole (eg, Figure 6A OP1 in) and the second hole (e.g., Figure 6A The transparent organic layer TOL filling the opening of the pixel defining layer PDL (in the pixel area PA) may be removed through an exposure process using the first mask MASK1.

[0139] As reference Figure 4 As described above, the height of the transparent organic layer TOL in the transmission area TA may be equal to the height of the pixel defining layer PDL, but is not limited thereto.

[0140] Then, a photoresist PR may be formed on the transparent organic layer TOL in the transmission area TA.

[0141] Reference Figure 6E , a photoresist PR may be formed on the transparent organic layer TOL through an exposure process using a second mask MASK2.

[0142] The photoresist PR may have a larger area (or a larger surface area) than the transmission area TA and may partially overlap the dummy pattern MP. Therefore, the side surface of the photoresist PR (i.e., the side surface in contact with the dummy pattern MP) may have a cross-section having an inverse tapered shape corresponding to the shape of the side surface of the dummy pattern MP.

[0143] Also, the photoresist PR may partially cover the upper surface of the dummy pattern MP. Therefore, the photoresist PR may further include a protrusion protruding from the top of the inclined side surface in a horizontal direction.

[0144] Then, if Figure 6F As shown in FIG, the dummy pattern MP may be eliminated. For example, the dummy pattern MP may be eliminated by a wet etching process.

[0145] Then, the emission layer EL, the first electrode CE, and the first inorganic layer IOL1 may be sequentially stacked.

[0146] Reference Figure 6G , an emission layer EL may be formed in each of the openings of the pixel defining layer PDL. For example, when the pixels emit light having different colors, the emission layers EL may be sequentially formed in the corresponding openings of the pixel defining layer PDL. According to some example embodiments, when the pixels emit light having the same color, the emission layers EL may be simultaneously formed in the openings of the pixel defining layer PDL.

[0147] Reference Figure 6H The first electrode CE may be formed over the entire surface of the substrate SUB. Specifically, the first electrode CE may be formed to cover the emission layer EL within the pixel area PA and the photoresist PR within the transmissive area TA. The first electrode CE may be formed through a deposition process. The first electrode CE may be formed discontinuously at the boundary between the transmissive area TA and the pixel area PA using the photoresist PR having an inversely tapered cross-section.

[0148] Reference Figure 6I, a first inorganic layer IOL1 may be formed over the entire surface of the substrate SUB. The first inorganic layer IOL1 may be formed by a deposition process (e.g., a chemical vapor deposition process). Similar to the first electrode CE, the first inorganic layer IOL1 may be discontinuously formed at the boundary between the transmission area TA and the pixel area PA using a photoresist PR having an inversely tapered cross-section. Because the first electrode CE is formed on the photoresist PR, the edge of the first inorganic layer IOL1 in the pixel area PA is further away from the transmission area TA than the corresponding edge of the first electrode CE. The distance between the edge of the first electrode CE and the edge of the first inorganic layer IOL1 may be equal to or approximately equal to the thickness of the first electrode CE. Therefore, the edge of the first electrode CE may be exposed by the first inorganic layer IOL1.

[0149] Then, if Figure 6J As shown in FIG, the photoresist PR may be stripped. That is, all of the first electrode CE and the first inorganic layer IOL1 stacked on the photoresist PR may be eliminated. Therefore, the first electrode CE and the first inorganic layer IOL may not exist in the transmission area TA.

[0150] Then, if Figure 4 As shown in FIG, the organic layer OL and the second inorganic layer IOL2 may be sequentially formed on the entire surface of the substrate SUB.

[0151] That is, the organic layer OL configured to cover the first inorganic layer IOL1 and the transparent organic layer TOL exposed by stripping the photoresist PR is formed, and the second inorganic layer IOL2 may be formed on the organic layer OL.

[0152] As reference Figures 6A to 6J As described above, a photoresist PR is formed on the transparent organic layer TOL using a dummy pattern MP, and the photoresist PR can be stripped after forming the first electrode CE and the first inorganic layer 1OL1. Therefore, the first electrode CE and the first inorganic layer 1OL1 are not present in the transmission area TA, thereby further improving the transmittance of the transmission area TA.

[0153] Meanwhile, since the first electrode CE and the first inorganic layer IOL1 are discontinuously formed due to the photoresist PR, edges (or side surfaces) of the first electrode CE and the first inorganic layer IOL1 corresponding to edges of the photoresist PR may be clearly seen.

[0154] Figure 7A and Figure 7B It shows that along Figure 3 A cross-sectional view of another example of a display device taken along line II'. Figure 7A and Figure 7B In the figure, it is shown that Figure 4The corresponding view.

[0155] Reference Figure 4 、 Figure 7A and Figure 7B , in addition to the transparent organic layers TOL_1 and TOL_2, Figure 7A display device and Figure 7B The display device can be used with Figure 4 Therefore, repeated descriptions will be omitted.

[0156] like Figure 7A As shown in FIG, the thickness H1 of the transparent organic layer TOL_1 may be smaller than the total thickness H2 of the protection layer PSV and the pixel defining layer PDL. That is, the height of the upper surface of the transparent organic layer TOL_1 relative to the substrate SUB may be lower than that of the pixel defining layer PDL.

[0157] In this case, refer to Figure 6E The photoresist PR is also formed in the second opening OP2 of the pixel defining layer PDL (i.e., the second opening OP2 formed in the transmission area TA). The side surface (or the side surface of the lower portion) of the photoresist PR may have a shape corresponding to the side surface of the pixel defining layer PDL. That is, it is easier to form the photoresist PR whose side surface has an inverse tapered shape.

[0158] like Figure 7B As shown in FIG, the thickness H1 of the transparent organic layer TOL_2 may be greater than the total thickness H2 of the protection layer PSV and the pixel defining layer PDL. That is, the height of the upper surface of the transparent organic layer TOL_2 relative to the substrate SUB may be higher than that of the pixel defining layer PDL.

[0159] In this case, refer to Figure 6E The described photoresist PR (or the lower surface of the photoresist PR) is formed further above the first electrode CE and / or the first inorganic layer IOL1, and the photoresist PR may be more easily stripped in a process of stripping the photoresist PR.

[0160] Figure 8A It shows that along Figure 3 A cross-sectional view of another example of a display device taken along line II'. Figure 8A In the figure, it is shown that Figure 4 The corresponding view.

[0161] Reference Figure 4 and Figure 8A , except for the first electrode CE_1 and the first inorganic layer IOL1_1 , Figure 8A Display device and Figure 4 Therefore, repeated descriptions will be omitted.

[0162] like Figure 8A As shown in FIG, a first edge EG1_1 of the first electrode CE_1 may coincide with a boundary between the transmission area TA and the pixel area PA (or an edge of the transparent organic layer TOL). A second edge EG2_1 of the first inorganic layer IOL1_1 does not overlap with the transparent organic layer TOL and may be separated from the transparent organic layer TOL.

[0163] As reference Figure 4 As described above, the distance between the first edge EG1_1 of the first electrode CE_1 and the second edge EG2_1 of the first inorganic layer IOL1_1 may be equal to or similar to the thickness of the first electrode CE_1 .

[0164] Figure 8B and Figure 8C Is used to explain the manufacturing Figure 8A A view of a display apparatus and method.

[0165] Reference Figure 6E and Figure 8B In the process of forming the photoresist PR_1, the photoresist PR_1 may be formed to have a thickness greater than that of the reference Figure 6E The thickness of the photoresist PR is described as thin.

[0166] Alternatively, by having Figure 6E In the second mask MASK2 shown in FIG. 1 , the photoresist PR_1 may be formed to have a cross section having an inverse tapered shape without protrusions, as shown in FIG. 1 .

[0167] Optionally, the dummy pattern MP_1 may be formed as a reference Figure 6E The described dummy pattern MP is thick, and is formed to have a relatively large tilt angle (ie, a relatively large taper angle, for example, an angle close to a vertical axis).

[0168] Reference Figure 6H and Figure 8C According to the shape of the side surface of the photoresist PR_1 , the first electrode CE_1 is formed entirely in the pixel area PA without a shadow area (or blind area), so that the first electrode CE_1 can contact the side surface of the photoresist PR_1 .

[0169] Reference Figure 6I and Figure 8C , an edge of the first inorganic layer IOL1_1 in the pixel area PA may be formed to be separated from the photoresist PR_1 by the first electrode CE_1 formed on the photoresist PR_1.

[0170] As reference Figures 8A to 8CAs described, the first edge EG1_1 of the first electrode CE_1 may coincide with the boundary between the transmission area TA and the pixel area PA (or the edge of the transparent organic layer TOL).

[0171] Figure 9A and Figure 9B It shows that along Figure 3 A cross-sectional view of another example of a display device taken along line II'. Figure 9A and Figure 9B In the figure, it is shown that Figure 8A The corresponding view.

[0172] Reference Figure 8A 、 Figure 9A and Figure 9B , in addition to the transparent organic layers TOL_2 and TOL_3, Figure 9A display device and Figure 9B The display device can be used with Figure 8A Therefore, repeated descriptions will be omitted.

[0173] like Figure 9A As shown in FIG, the thickness H1 of the transparent organic layer TOL_2 may be greater than the total thickness H2 of the protection layer PSV and the pixel defining layer PDL. Also, the height of the transparent organic layer TOL_2 may be equal to the height of the first electrode CE_1 contacting the transparent organic layer TOL_2 based on the substrate SUB.

[0174] In this case, refer to Figure 6E The described photoresist PR (or the lower surface of the photoresist PR) is formed further above the first electrode CE_1, and the photoresist PR may be more easily stripped in a process of stripping the photoresist PR.

[0175] like Figure 9B As shown in FIG, the thickness H1 of the transparent organic layer TOL_3 may be greater than the total thickness H2 of the protective layer PSV and the pixel defining layer PDL. Furthermore, the height of the transparent organic layer TOL_3 relative to the substrate SUB may be equal to the height of the first inorganic layer IOL1_2 in contact with the transparent organic layer TOL_3.

[0176] The first inorganic layer IOL1_2 can be adjusted by reference Figure 8B The shape (or taper angle) or height of the side surface of the photoresist PR_1 described and the reference Figure 8BAt least one of the shape and height of the side surface of the dummy pattern MP_1 is formed to contact the transparent organic layer TOL_3. In this case, the first electrode CE_1 is covered by the first inorganic layer IOL1_2 (and the transparent organic layer TOL_3) and can be separated from the organic layer OL by the first inorganic layer IOL1_2 without contacting the organic layer OL.

[0177] Reference Figure 6E The described photoresist PR (or the lower surface of the photoresist PR) is formed further above the first inorganic layer IOL1_2, and the photoresist PR may be more easily stripped in a process of stripping the photoresist PR.

[0178] Figure 10A It shows that along Figure 3 A cross-sectional view of further details of a display device according to some example embodiments is shown, taken along line II'. Figure 10A In the figure, it is shown that Figure 4 The corresponding view.

[0179] Reference Figure 4 and Figure 10A , except for the first electrode CE_2 and the first inorganic layer IOL1_2, Figure 10A The display device can be used with Figure 4 Therefore, some repeated descriptions thereof may be omitted.

[0180] like Figure 10A As shown in FIG, the first electrode CE_2 extends to the transmission area TA, thereby covering the edge of the transparent organic layer TOL. For example, the first edge EG1_2 of the first electrode CE_2 may coincide with the edge of the lower surface of the transparent organic layer TOL.

[0181] The first inorganic layer IOL1_2 extends to a boundary between the transmission area TA and the pixel area PA. For example, a second edge EG2_2 of the first inorganic layer IOL1_2 may coincide with an edge of the upper surface of the transparent organic layer TOL in a plan view.

[0182] As reference Figure 4 As described above, the distance between the first edge EG1_2 of the first electrode CE_2 and the second edge EG2_2 of the first inorganic layer IOL1_2 may be equal to or similar to the thickness of the first electrode CE_2 .

[0183] Figure 10B and Figure 10C Is used to explain the manufacturing Figure 10A A view of a display apparatus and method.

[0184] Reference Figure 6D 、 Figure 10B and Figure 10C , forming a transparent organic layer TOL, and then a dummy pattern (eg, Figure 10C MP_2 in ).

[0185] like Figure 10B As shown in the reference Figure 6A When the panel is described, the transparent organic layer TOL may fill the first hole (eg, Figure 6A OP1 in) and the second hole (e.g., Figure 6A OP2 in the ).

[0186] Then, if Figure 10C As shown in FIG, the dummy pattern MP_2 may be formed in a boundary region between the pixel defining layer PDL and the transparent organic layer TOL along an edge of the transmission area TA.

[0187] With reference Figure 6B Unlike the described dummy pattern MP, the dummy pattern MP_2 may overlap the edge of the transparent organic layer TOL.

[0188] Therefore, refer to Figure 6E The described photoresist PR is formed only in the transmission area TA in a plan view, and a photoresist having Figure 10A A display device with a stacked structure is shown in FIG.

[0189] As reference 10A to 10C As described, the first electrode CE_2 partially overlaps the transparent organic layer TOL, and the second edge EG2_2 of the first inorganic layer IOL1_2 may coincide with the boundary between the transmission area TA and the pixel area PA (or the edge of the transparent organic layer TOL).

[0190] According to some example embodiments of the present disclosure, the display device may be configured to include a transparent organic layer, an organic encapsulation layer, and a second inorganic encapsulation layer sequentially stacked only in a transmission region, and the first electrode (e.g., cathode electrode) of the light-emitting element and the first inorganic encapsulation layer may not be included in the transmission region. Therefore, the transmittance of the transmission region may be improved compared to when the first electrode and the first inorganic encapsulation layer are positioned in the transmission region.

[0191] In some exemplary embodiments of the present disclosure, a method for manufacturing a display device is configured such that a photoresist is formed on the transparent organic layer using a dummy pattern, and the photoresist can then be stripped after forming the first electrode and the first inorganic encapsulation layer. Therefore, the first electrode and the first inorganic encapsulation layer are not present in the transmissive region, thereby further improving the transmittance of the transmissive region.

[0192] Effects obtainable from the embodiment are not limited to the above-described effects, and various effects are included in this specification.

[0193] Although aspects of some example embodiments of the present disclosure have been described in considerable detail with reference to the accompanying drawings, it will be understood by those skilled in the art that the present disclosure may be implemented in other specific forms without changing the technical spirit or essential features of the present disclosure. Therefore, it should be noted that the foregoing embodiments are merely illustrative in all aspects and should not be construed as limiting the present disclosure.

Claims

1. A display device, comprising: a substrate comprising pixel regions and a transmissive region located between the pixel regions; a pixel circuit layer comprising at least one transistor located in each of the pixel regions; as well as a light emitting element layer located on the pixel circuit layer and including at least one light emitting element located in each of the pixel regions and coupled to the at least one transistor, and a transparent organic layer located in the transmission region, Among them, the light-emitting element layer also includes: a first electrode, located in the pixel area; a first inorganic layer, only arranged in the pixel area and located on the first electrode; an organic layer, covering the first inorganic layer and the transparent organic layer; and a second inorganic layer, located on the organic layer.

2. The display device according to claim 1, wherein The first electrode and the first inorganic layer do not overlap the transparent organic layer, and the first electrode and the first inorganic layer are spaced apart from the transparent organic layer in a plan view.

3. The display device according to claim 2, wherein: A side of the first electrode facing the transparent organic layer includes a straight line.

4. The display device according to claim 2, wherein: A first edge of the first electrode is closer to the transparent organic layer than a second edge of the first inorganic layer, and A portion of the first electrode exposed by the first inorganic layer contacts the organic layer.

5. The display device according to claim 4, wherein A distance between the first edge of the first electrode and the second edge of the first inorganic layer is equal to a thickness of the first electrode. The display device according to claim 1 , wherein: The light emitting element layer further includes: a second electrode, located on the pixel circuit layer; a pixel defining layer located on the second electrode and configured to expose the second electrode; and an emission layer overlapping the second electrode exposed by the pixel defining layer, and The at least one light-emitting element includes the first electrode, the second electrode and the emission layer.

7. The display device according to claim 6, wherein: With respect to the substrate, a height of an upper surface of the transparent organic layer is equal to a height of the pixel defining layer.

8. The display device according to claim 6, wherein: With respect to the substrate, a height of an upper surface of the transparent organic layer is lower than a height of the pixel defining layer.

9. The display device according to claim 6, wherein: With respect to the substrate, a height of an upper surface of the transparent organic layer is higher than a height of the pixel defining layer.

10. The display device according to claim 2, wherein: The substrate further comprises a first region and a second region, In the first region, the pixel regions of the substrate are arranged in a grid shape to be spaced apart from each other, and the transmission region is positioned between the pixel regions spaced apart from each other, and In the second region, the pixel regions of the substrate are adjacent to each other.

11. The display device according to claim 10, wherein: The first electrode is continuously formed in the pixel region, and The thickness of the first electrode is uniform throughout the entire pixel area.

12. The display device according to claim 11, wherein: The first inorganic layer includes inorganic patterns separated from each other, and The inorganic patterns are respectively located in the pixel regions.

13. The display device according to claim 1, wherein The refractive index of the transparent organic layer is in the range of 1.5 to 1.

7.

14. The display device according to claim 1, wherein: The first electrode and the first inorganic layer do not overlap with the transparent organic layer, and A first edge of the first electrode coincides with an edge of the transparent organic layer in a plan view.

15. The display device according to claim 14, wherein A second edge of the first inorganic layer is spaced apart from the transparent organic layer in a plan view.

16. The display device according to claim 14, wherein: A first side of the first electrode facing the transparent organic layer and a second side of the first inorganic layer facing the transparent organic layer are positioned on the same surface as a side of the transparent organic layer.

17. The display device according to claim 1, wherein The first electrode partially overlaps the transparent organic layer, and the first inorganic layer does not overlap the transparent organic layer.

18. A method for manufacturing a display device, the method comprising the following steps: preparing a panel including a plurality of insulating layers on a substrate, at least one transistor formed between the plurality of insulating layers in each of pixel regions of the substrate, and a groove formed by penetrating at least one of the plurality of insulating layers in a transmission region of the substrate, the transmission region being positioned between the pixel regions; forming dummy patterns on the plurality of insulating layers along edges of the transmission region; forming a transparent organic layer in the groove of the transmission area; forming a photoresist on the transparent organic layer; removing the dummy pattern; forming a light-emitting element including a first electrode on the substrate, wherein the first electrode is discontinuous between the transmission area and the pixel area due to the photoresist; forming a first inorganic layer on the entire substrate; removing the photoresist; as well as An organic layer is formed covering the first inorganic layer in the pixel region and covering the transparent organic layer exposed by removing the photoresist in the transmission region.

19. The method according to claim 18, further comprising the steps of: A second inorganic layer is formed on the organic layer.

20. The method according to claim 19, wherein Forming the light-emitting element comprises the following steps: forming an emission layer in the pixel region; and The first electrode is formed on the entire substrate using a chemical vapor deposition technique.

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