Infrared stealth coating and preparation method thereof

Abstract

The application discloses an infrared stealth coating and a preparation method thereof. The infrared stealth coating and the preparation method thereof mainly comprise the following components: 20-40% of solvent based on the total mass of the infrared stealth coating; 10-15% of adhesive based on the total mass of the infrared stealth coating; 20-30% of filler based on the total mass of the infrared stealth coating; 5-10% of anti-settling agent based on the total mass of the infrared stealth coating; and 2-5% of additive based on the total mass of the infrared stealth coating. The filler of the infrared stealth coating and the preparation method thereof is a doped semiconductor. Compared with traditional metal fillers, the doped semiconductor has lower infrared emissivity and is compatible with radar and visible light and other wave bands, thereby achieving better hiding effect.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of paint production, in particular to an infrared stealth paint and a preparation method thereof. BACKGROUND

[0002] A thermal infrared detector can detect heat in the environment to determine the location of hidden personnel or equipment in a complex environment, and plays a crucial role in the military field. Therefore, in order to achieve better strategic hiding effect, countries have successively developed infrared stealth technology, and the infrared stealth technology is to use the properties of the paint itself to reduce the possibility of being detected by thermal infrared.

[0003] However, the existing infrared stealth paint mostly uses pure metal powder as filler, but metal is easy to form an oxide layer on the surface, which will increase the infrared emissivity of the paint, thus reducing the concealment effect. Therefore, it is urgent to make innovative design on the basis of the original infrared stealth paint and its preparation method. SUMMARY

[0004] The present application relates to the technical field of paint production, in particular to an infrared stealth paint and a preparation method thereof.

[0005] The present application relates to the technical field of paint production, in particular to an infrared stealth paint and a preparation method thereof.

[0006] Preferably, the composition of the adhesive is 40% zinc powder, 15% epoxy resin, 20% bentonite and 25% talc powder by mass ratio.

[0007] Preferably, the semiconductor filler is composed of metal and dopant, the metal is aluminum, and the dopant is silicon dioxide.

[0008] Preferably, the dispersing agent is one of polyacrylate, cellulose derivative, triethylhexyl phosphate and bentonite.

[0009] Preferably, the thickening agent is colloidal silicon dioxide, bentonite, polyacrylate and cellulose derivative.

[0010] Preferably, the production steps of the infrared stealth coating are as follows:

[0011] Step 1:

[0012] Take 3.04g of zinc powder, 5.99g of talc powder and 0.43g of bentonite, mix them, grind them with a ball mill, then add 0.5g of epoxy resin, stir them evenly in hot water at 40-50℃ for 10min, then pour them on an aluminum plate, put them in an oven at 100℃, and bake them for 5 hours, to obtain the binder.

[0013] Step 2:

[0014] Take 0.5g of 200-mesh aluminum powder and pour it into the urea solvent, then take 0.8g of silicon dioxide and pour it into the mixture, stir them at room temperature for 16-20 hours, then perform suction filtration and dry them, to obtain the filler.

[0015] Step 3:

[0016] Disperse the filler, distilled water and dispersant at a dispersion rate of 4000r / min for 30min with a high-speed dispersion machine, pour away the upper layer of water after standing and clarifying, pour the binder prepared in Step 1 into the slurry, mix them evenly, then add a thickening agent to adjust the viscosity, so that the particle diameter is 9-13μm, and then sieve them, to obtain the 8-14μm waveband water-based infrared stealth coating.

[0017] Compared with the prior art, the beneficial effects of the present application are that the filler of the infrared stealth coating and the preparation method thereof is a doped semiconductor, which has lower infrared emissivity than the traditional metal filler, and is compatible with radar and visible light wavebands, to achieve better stealth effect. DETAILED DESCRIPTION

[0018] The technical solutions in the embodiments of the present application will be clearly and completely described below in combination with the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0019] The present application provides a technical solution:

[0020] Embodiment 1:

[0021] Step 1:

[0022] Take 3.04g of zinc powder, 5.99g of talc powder and 0.43g of bentonite mixed, ball mill, then add 0.5g of epoxy resin, 40~50℃ hot water in uniform stirring 10min, then pour into the aluminum plate, put into the oven at 100℃, baking 5 hours, can be prepared adhesive.

[0023] Step 2:

[0024] Take 0.5g of 200 mesh aluminum powder into urea solvent, then take 0.8g of silica into the mixture, stirring at room temperature for 16~20 hours, then dry by suction filtration, can be prepared filler.

[0025] Step 3:

[0026] The filler, distilled water and dispersant are dispersed by high speed dispersion machine at a dispersion rate of 4000r / min for 30min, and then the water in the upper layer is poured out. The adhesive prepared in step 1 is poured into the slurry and mixed uniformly, and then the thickening agent is added to adjust the viscosity, so that the particle diameter is 9~13μm, and then the 8~14μm wave band water-based infrared stealth coating is prepared.

[0027] Example 2:

[0028] Step 1:

[0029] Take 3.04g of zinc powder, 5.99g of talc powder and 0.43g of bentonite mixed, ball mill, then add 0.5g of epoxy resin, 40~50℃ hot water in uniform stirring 10min, then pour into the aluminum plate, put into the oven at 100℃, baking 5 hours, can be prepared adhesive.

[0030] Step 2:

[0031] Take 0.5g of 200 mesh aluminum powder into urea solvent, then take 0.8g of silica into the mixture, stirring at room temperature for 16~20 hours, then dry by suction filtration, can be prepared filler.

[0032] Step 3:

[0033] The filler, distilled water and dispersant are dispersed by high speed dispersion machine at a dispersion rate of 4000r / min for 30min, and then the water in the upper layer is poured out. The adhesive prepared in step 1 is poured into the slurry and mixed uniformly, and then the thickening agent is added to adjust the viscosity, so that the particle diameter is 9~13μm, and then the 8~14μm wave band water-based infrared stealth coating is prepared.

[0034] Example 3:

[0035] Step 1:

[0036] Take 3.04g of zinc powder, 5.99g of talc powder and 0.43g of bentonite, mix and grind with a ball mill, then add 0.5g of epoxy resin, stir uniformly in hot water at 40-50℃ for 10min, then pour on an aluminum plate, put into a 100℃ oven, bake for 5 hours, to prepare the adhesive.

[0037] Step 2:

[0038] Take 0.5g of 200 mesh aluminum powder into urea solvent, then take 0.8g of silica and mix, stir at room temperature for 16-20 hours, then perform suction filtration and dry, to prepare the filler.

[0039] Step 3:

[0040] Disperse the filler, distilled water and dispersant with a high-speed disperser at a dispersion rate of 4000r / min for 30min, stand still and clarify, then pour away the upper layer of water, add the adhesive prepared in step 1 into the slurry and mix uniformly, then add thickening agent to adjust the viscosity, so that the particle diameter is 15-19μm, then sieve, to prepare the 8-14μm waveband water-based infrared stealth coating.

[0041] Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art can modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement to part of the technical features, any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A method for preparing an infrared cloaking paint, characterized by: The production steps of the infrared stealth coating are: Step 1: Mix 3.04g of zinc powder, 5.99g of talc powder and 0.43g of bentonite, grind finely by using a ball mill, then add 0.5g of epoxy resin, uniformly stir in hot water at 40-50℃ for 10min, then pour on an aluminum plate, put into an oven at 100℃, and bake for 5 hours, to obtain the adhesive; Step 2: Pour 0.5g of 200 mesh aluminum powder into urea solvent, then pour 0.8g of silicon dioxide into the mixture, stir at room temperature for 16-20 hours, then perform filtration and drying, to obtain the filler; Step 3: Disperse the filler, distilled water and dispersant by using a high-speed dispersion machine at a dispersion rate of 4000r / min for 30min, after standing and clarifying, pour off the upper layer of water, then pour the adhesive prepared in step 1 into the slurry, mix uniformly, then add a thickening agent to adjust the viscosity, so that the particle diameter is 9-13μm, then sieve, to obtain the 8-14μm wave band water-based infrared stealth coating.

2. The method for preparing an infrared stealth coating according to claim 1, characterized in that: The dispersant is one of polyacrylate, cellulose derivative, triethylhexyl phosphate and bentonite.

3. The method for preparing an infrared stealth coating according to claim 1, characterized in that: The thickening agent is colloidal silicon dioxide, bentonite, polyacrylate and cellulose derivative.