An electrovariable emissivity structure

Abstract

This invention relates to the field of electrovariable emissivity structure technology, and particularly to an electrovariable emissivity structure. An embodiment of this invention provides an electrovariable emissivity structure comprising, along its thickness, a reflective layer, an insulating layer, and a regulating layer. The reflective layer reflects infrared light and is made of materials including conductors and semiconductors. The regulating layer is made of materials including conductors or semiconductors with infrared semi-transparent properties. The reflective layer and the regulating layer are respectively connected to two electrodes of a power supply, and the electrode voltages are adjustable. An optical resonant cavity structure is formed between the regulating layer and the reflective layer. The optical resonant cavity is used to regulate the absorption of infrared light. By adjusting the voltage of the power supply, the infrared transmittance and absorptivity of the regulating layer are changed, thereby adjusting the amount of infrared light entering the optical resonant cavity structure, and thus regulating the infrared emissivity of the electrovariable emissivity structure. This embodiment of the invention provides an electrovariable emissivity structure capable of providing an adjustable emissivity structure for the infrared band.

Description

Technical Field

[0001] This invention relates to the field of electrovariable emissivity structure technology, and particularly to an electrovariable emissivity structure. Background Technology

[0002] Satellites and spacecraft experience complex, variable, and extreme thermal environments (fluctuating within a range of approximately ±150 degrees Celsius) while operating in space. Effective thermal management and control are crucial to maintaining the temperature of internal components and payloads within safe limits. In the high vacuum environment, thermal radiation is the only way for spacecraft surfaces to dissipate heat. Therefore, how to intelligently, proactively, and effectively regulate the outward thermal radiation from spacecraft surfaces is of great interest. Electrochromic technology can support proactive, continuous, and precise thermal management.

[0003] Traditional electrochromic structures typically consist of five thin films: two transparent conductive substrates, an electrochromic layer, an electrolyte layer, and a complementary ion storage layer. By applying a voltage to the electrode layers, ions are implanted and extracted from the electrochromic layer, causing a redox reaction that alters the optical properties, namely color and transparency. This change can extend to the longer wavelengths of the mid- and far-infrared bands, allowing for the manipulation of visible and infrared light. However, some problems remain. For example, electrochromic structures typically have high absorption rates in the infrared band. On the sun-exposed surfaces of spacecraft, the material is insufficient to radiate this heat, leading to thermal control failure.

[0004] Therefore, to address the above shortcomings, there is an urgent need for an electrovariable emissivity structure. Summary of the Invention

[0005] This invention provides an electrovariable emissivity structure that can provide an adjustable emissivity for the infrared band.

[0006] This invention provides an electrovariable emissivity structure, which includes a reflective layer, an insulating layer, and an adjustment layer sequentially along the thickness direction. The reflective layer is used to reflect infrared light, and the material used to fabricate the reflective layer includes conductors and semiconductors. The material used to fabricate the adjustment layer includes conductors or semiconductors with infrared semi-transparent properties. The reflective layer and the adjustment layer are respectively connected to two electrodes of a power supply, and the electrode voltage is adjustable.

[0007] An optical resonant cavity structure is formed between the adjustment layer and the reflective layer. The optical resonant cavity is used to adjust the absorption of infrared light. By adjusting the voltage of the power supply, the infrared transmittance and absorptivity of the adjustment layer are changed to adjust the amount of infrared light entering the optical resonant cavity structure, thereby adjusting the infrared light emissivity of the electrovariable emissivity structure.

[0008] In one possible design, the material used to prepare the reflective layer includes one or more of the following: gold, silver, copper, iron, aluminum, indium tin oxide, fluorine-doped tin oxide, titanium oxide, zinc oxide, zinc-doped aluminum oxide, or graphene.

[0009] The materials used to prepare the insulating layer include one or more combinations of silicon oxide, silicon nitride, silicon carbide, tungsten oxide, aluminum oxide, nickel oxide, vanadium oxide, beryllium oxide, magnesium oxide, tantalum oxide, titanium oxide, cobalt oxide, zirconium oxide, and yttrium oxide.

[0010] The materials used to prepare the conditioning layer include one or a combination of indium tin oxide, fluorine-doped tin oxide, titanium oxide, zinc oxide, silver, zinc-doped aluminum oxide, or graphene.

[0011] In one possible design, the thickness of the reflective layer is 10–1500 nanometers;

[0012] The thickness of the insulating layer is 10–1500 nanometers;

[0013] The thickness of the adjustment layer is 10–1500 nanometers.

[0014] In one possible design, the material used to fabricate the conditioning layer includes a heat-treated conductor or semiconductor.

[0015] In one possible design, the voltage applied to the regulating layer by the power supply is -5 to 0V or 0 to 5V.

[0016] In one possible design, the reflective layer has a thickness of 150–250 nm, the insulating layer has a thickness of 500–800 nm, and the adjustment layer has a thickness of 500–800 nm.

[0017] When the positive terminal of the power supply is connected to the adjustment layer and a positive bias voltage is applied, the infrared emissivity of the electrochromic emissivity structure increases; when the negative terminal of the power supply is connected to the adjustment layer and a negative bias voltage is applied, the infrared emissivity of the electrochromic emissivity structure decreases.

[0018] In one possible design, the thickness of the reflective layer is 150–250 nm, the thickness of the insulating layer is 150–250 nm, and the thickness of the adjustment layer is 45–80 nm.

[0019] When the positive terminal of the power supply is connected to the adjustment layer and a positive bias voltage is applied, the infrared emissivity of the electrochromic emissivity structure decreases; when the negative terminal of the power supply is connected to the adjustment layer and a negative bias voltage is applied, the infrared emissivity of the electrochromic emissivity structure increases.

[0020] In one possible design, the reflective layer is disposed on the substrate by a coating process, the insulating layer is disposed on the reflective layer by the coating process, and the adjustment layer is disposed on the insulating layer by the coating process;

[0021] The substrate is a rigid substrate or an organic substrate.

[0022] In one possible design, the coating process includes one or a combination of evaporation coating, sputtering coating, and ion plating.

[0023] In one possible design, the heat treatment temperature is 10–600 degrees Celsius and the time is 10–600 minutes.

[0024] Compared with the prior art, the present invention has at least the following beneficial effects:

[0025] The electrovariable emissivity structure provided by this invention has three layers: a reflective layer, an insulating layer, and a regulating layer along the thickness direction. Both the reflective and regulating layers are conductive or semiconductor materials. The reflective layer reflects infrared light, while the regulating layer is infrared semi-transparent, reflecting some infrared light while allowing some to pass through. When infrared light irradiates the regulating layer, some is reflected, and some passes through. The infrared light passing through the regulating layer oscillates in an optical resonant cavity structure between the reflective and regulating layers. The oscillation effect of the optical resonant cavity structure significantly increases the infrared emissivity of the electrovariable emissivity structure. Furthermore, the reflective and regulating layers are connected to two electrodes of a power supply. By adjusting the voltage of the power supply, the carrier concentration in the regulating layer is controlled. The carrier concentration affects the infrared light transmittance of the regulating layer; therefore, adjusting the power supply voltage changes the infrared light transmittance of the regulating layer, thereby adjusting the intensity of infrared light entering the optical resonant cavity and the oscillation effect of the optical resonant cavity, achieving adjustable infrared emissivity.

[0026] It should be noted that the infrared reflective properties of the reflective layer can come from the material itself, or the reflective layer can be heat-treated to increase its conductivity (greater than 1000 S / cm) to give it infrared reflective properties.

[0027] In this invention, the effects of connecting the regulating layer to electrodes of different polarities are different. When the regulating layer is connected to the negative electrode, the carrier concentration is increased and the infrared transmittance of the regulating layer is reduced; when the regulating layer is connected to the positive electrode, the carrier concentration is reduced and the infrared transmittance of the regulating layer is increased. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a schematic diagram of an electrovariable emissivity structure provided in an embodiment of the present invention;

[0030] Figure 2 An infrared emissivity spectrum of an electrovariable emissivity structure is provided for a specific embodiment two of the present invention;

[0031] Figure 3 An infrared emissivity spectrum of an electrovariable emissivity structure is provided for a specific embodiment three of the present invention;

[0032] Figure 4 The infrared emissivity spectrum of an electrovariable emissivity structure is provided for embodiment seven of the present invention.

[0033] In the picture:

[0034] 1-Reflective layer;

[0035] 2-Insulating layer;

[0036] 3-Regulation layer;

[0037] 4-Power supply. Detailed Implementation

[0038] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0039] In the description of the embodiments of the present invention, unless otherwise expressly specified and limited, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance; unless otherwise specified or stated, the term "multiple" refers to two or more; the terms "connected," "fixed," etc., should be interpreted broadly. For example, "connected" can be a fixed connection, a detachable connection, an integral connection, or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the present invention according to the specific circumstances.

[0040] In this specification, it should be understood that the directional terms such as "upper" and "lower" used in the description of the embodiments of the present invention are used to describe the angles shown in the accompanying drawings and should not be construed as limiting the embodiments of the present invention. Furthermore, in the context, it should also be understood that when it is mentioned that one element is connected "upper" or "lower" to another element, it can be directly connected to the other element "upper" or "lower," or indirectly connected to the other element "upper" or "lower" through an intermediate element.

[0041] like Figure 1 As shown, this embodiment of the invention provides an electrovariable emissivity structure, which includes a reflective layer 1, an insulating layer 2, and an adjustment layer 3 in sequence along the thickness direction. The reflective layer 1 is used to reflect infrared light. The materials used to prepare the reflective layer 1 include conductors and semiconductors. The materials used to prepare the adjustment layer 3 include conductors or semiconductors with infrared semi-transparent properties. The reflective layer 1 and the adjustment layer 3 are respectively connected to two electrodes of a power supply 4, and the electrode voltage is adjustable.

[0042] An optical resonant cavity structure is formed between the adjustment layer 3 and the reflective layer 1. The optical resonant cavity is used to adjust the absorption of infrared light. By adjusting the voltage of the power supply 4, the infrared transmittance and absorptivity of the adjustment layer 3 are changed to adjust the amount of infrared light entering the optical resonant cavity structure, thereby adjusting the infrared light emissivity of the electrovariable emissivity structure.

[0043] The electrovariable emissivity structure provided by this invention has three layers: a reflective layer 1, an insulating layer 2, and a regulating layer 3 along the thickness direction. Both the reflective layer 1 and the regulating layer 3 are conductive or semiconductor materials. The reflective layer 1 reflects infrared light, while the regulating layer 3 is infrared semi-transparent, reflecting some infrared light while allowing some to pass through. When infrared light irradiates the regulating layer 3, some is reflected, and some passes through. The infrared light passing through the regulating layer 3 oscillates 3 in the optical resonant cavity structure between the reflective layer 1 and the regulating layer 3. The oscillation effect of the optical resonant cavity structure significantly increases the infrared emissivity of the electrovariable emissivity structure. Furthermore, the reflective layer 1 and the regulating layer 3 are respectively connected to two electrodes of a power supply 4. By adjusting the voltage of the power supply 4, the carrier concentration in the regulating layer 3 is controlled. The carrier concentration affects the infrared light transmittance of the regulating layer 3. Therefore, by adjusting the voltage of the power supply 4, the infrared light transmittance of the regulating layer 3 can be changed, thereby adjusting the intensity of the infrared light entering the optical resonant cavity and the oscillation effect of the optical resonant cavity, achieving an adjustable infrared emissivity.

[0044] It should be noted that the infrared reflective properties of the reflective layer 1 can come from the material itself, or the reflective layer 1 can be heat-treated to increase its conductivity (greater than 1000 S / cm) to give it infrared reflective properties.

[0045] The emissivity modulation of the electrovariable emissivity structure is related to the following four factors: a. the infrared half-transmittance of the modulation layer; b. the thickness of the modulation layer; c. the thickness of the resonant cavity; and d. the carrier concentration of the modulation layer. In this invention, connecting the modulation layer 3 to electrodes of different polarities yields different effects. Connecting the modulation layer 3 to the negative electrode increases the carrier concentration and decreases the infrared transmittance of the modulation layer 3; connecting the modulation layer 3 to the positive electrode decreases the carrier concentration and increases the infrared transmittance of the modulation layer 3.

[0046] In some embodiments of the present invention, the materials used to prepare the reflective layer 1 include one or more of the following: gold, silver, copper, iron, aluminum, indium tin oxide, fluorine-doped tin oxide, titanium oxide, zinc oxide, zinc-doped aluminum oxide, or graphene.

[0047] The materials used to prepare the insulating layer 2 include one or more combinations of silicon oxide, silicon nitride, silicon carbide, tungsten oxide, aluminum oxide, nickel oxide, vanadium oxide, beryllium oxide, magnesium oxide, tantalum oxide, titanium oxide, cobalt oxide, zirconium oxide, and yttrium oxide.

[0048] The materials used to prepare the conditioning layer 3 include one or a combination of indium tin oxide, fluorine-doped tin oxide, titanium oxide, zinc oxide, silver, zinc-doped aluminum oxide, or graphene.

[0049] In this embodiment, the reflective layer 1 can be prepared using a visible opaque material, such as gold, copper, iron, or aluminum, so that the visible light reflectance of the electrovariable emissivity structure can be adjusted to the infrared light emissivity. Alternatively, the reflective layer 1 can be prepared using a visible transparent material, such as indium tin oxide (ITO), silver (Ag), ITO / Ag / ITO, fluorine-doped tin oxide (FTO), titanium oxide, zinc oxide, zinc-doped aluminum oxide, or graphene, so that the visible light transmittance of the electrovariable emissivity structure can be adjusted to the infrared light emissivity.

[0050] In this embodiment, the regulating layer 3 is a material whose carrier concentration changes with voltage. Specifically, after the structure is determined and the electrodes are connected, applying a voltage causes electron injection / extraction, which in turn causes a change in the carrier concentration of the material.

[0051] In some embodiments of the present invention, the thickness of the reflective layer 1 is 10 to 1500 nanometers;

[0052] The thickness of insulating layer 2 is 10–1500 nanometers;

[0053] The thickness of the adjustment layer 3 is 10–1500 nanometers.

[0054] In this embodiment, the thickness of the adjustment layer 3 affects its infrared transmittance, which in turn affects the oscillation effect of the optical resonant cavity. The thickness of the insulating layer 2 affects the structure of the optical resonant cavity, and both directly determine whether an optical resonant cavity can be formed. Preferably, the thickness of the insulating layer 2 is 450–800 nm, and the thickness of the adjustment layer 3 is 40–800 nm.

[0055] In some embodiments of the present invention, the material used to prepare the regulating layer 3 includes a heat-treated conductor or semiconductor.

[0056] In this embodiment, electrovariable emissivity structures with different initial states can be prepared according to actual needs. The initial state refers to the infrared emissivity when no voltage is applied. Without heat treatment, the emissivity of the initial state is high emission (0.81), and after applying a negative bias voltage, it becomes low emission (0.39). After heat treatment, the initial state is low emission (0.5), and after applying a positive bias voltage, it becomes high emission (0.81). The emissivity modulation range of the electrovariable emissivity structure provided by this invention is greater than 0.42, the response time is less than 30s, and the solar absorptivity is less than 0.28. It should be noted that the above emissivity values ​​are integral emissivity, calculated by integrating blackbody radiation (0.25~25μm band).

[0057] In some embodiments of the present invention, the voltage applied by the power supply 4 to the regulating layer 3 is -5 to 0V or 0 to 5V.

[0058] In this embodiment, since the oscillation modulation function of infrared light mainly comes from the optical resonant cavity, only a relatively low voltage is needed to change the infrared transmittance of the modulation layer 3. Preferably, the voltage applied to the modulation layer 3 by the power supply 4 is -3 to 0V or 0 to 3V.

[0059] In some embodiments of the present invention, the thickness of the reflective layer 1 is 150-250 nm, the thickness of the insulating layer 2 is 500-800 nm, and the thickness of the regulating layer 3 is 500-800 nm.

[0060] When the positive terminal of power supply 4 is connected to the regulating layer 3 and a positive bias voltage is applied, the infrared emissivity of the electrochromic emissivity structure increases; when the negative terminal of power supply 4 is connected to the regulating layer 3 and a negative bias voltage is applied, the infrared emissivity of the electrochromic emissivity structure decreases.

[0061] In this embodiment, the adjustment layer 3 is relatively thick, and its infrared transmittance is low in the initial state. At this time, applying a positive bias voltage to extract electrons reduces the carrier concentration, increases the infrared transmittance of the adjustment layer 3, and makes the infrared light entering the optical resonant cavity stronger and the infrared emissivity higher. Applying a negative bias voltage to charge electrons increases the carrier concentration, increases the infrared reflectivity of the adjustment layer 3, and makes the infrared light entering the optical resonant cavity weaker and the infrared emissivity lower.

[0062] In some embodiments of the present invention, the thickness of the reflective layer 1 is 150-250 nm, the thickness of the insulating layer 2 is 150-250 nm, and the thickness of the regulating layer 3 is 45-80 nm.

[0063] When the positive terminal of power supply 4 is connected to the regulating layer 3 and a positive bias voltage is applied, the infrared emissivity of the electrochromic emissivity structure decreases; when the negative terminal of power supply 4 is connected to the regulating layer 3 and a negative bias voltage is applied, the infrared emissivity of the electrochromic emissivity structure increases.

[0064] In this embodiment, the adjustment layer 3 is relatively thin, and its infrared transmittance in the initial state is high. At this time, most of the infrared light in the initial state passes through the adjustment layer and is mainly reflected by the reflective layer. Applying a positive bias voltage extracts electrons to reduce the carrier concentration, and the infrared transmittance of the adjustment layer 3 further increases, affecting the infrared light oscillation effect of the optical resonator. Most of the infrared light is directly reflected by the reflective layer 1, which reduces the infrared emissivity. Applying a negative bias voltage injects electrons to increase the carrier concentration, and the infrared reflectivity of the adjustment layer 3 increases, thereby increasing the infrared light oscillation of the optical resonator and increasing the infrared emissivity.

[0065] In some embodiments of the present invention, the reflective layer 1 is disposed on the substrate by a coating process, the insulating layer 2 is disposed on the reflective layer 1 by a coating process, and the adjusting layer 3 is disposed on the insulating layer 2 by a coating process.

[0066] The substrate can be a rigid substrate or an organic substrate.

[0067] In this embodiment, the substrate can be a rigid substrate, such as glass, quartz, copper foil, aluminum sheet, or silicon wafer; the substrate can also be an organic substrate, such as polyethylene terephthalate (PET), polydimethylsiloxane (PDMS), polyimide (PI), polyethylene, polypropylene, polycarbonate (PC), polyurethane, or silicone resin.

[0068] In some embodiments of the present invention, the coating process includes one or a combination of evaporation coating, sputtering coating, and ion plating.

[0069] In some embodiments of the present invention, the heat treatment temperature is 10 to 600 degrees Celsius and the time is 10 to 600 minutes. Specific Implementation Method 1

[0071] An electrovariable emissivity structure is fabricated on a substrate, which is generally any rigid substrate such as glass, quartz, copper foil, aluminum sheet, silicon wafer, etc., or an organic substrate such as polyethylene terephthalate (PET), polydimethylsiloxane (PDMS), polyimide (PI), polyethylene, polypropylene, polycarbonate (PC), polyurethane, or silicone resin. Its film structure comprises at least three layers from bottom to top: a first substrate; a reflective layer 1 disposed on the upper side of the first substrate; an insulating layer 2 disposed on the upper side of the first substrate; and an adjustment layer 3 disposed on the upper side of the insulating layer 2.

[0072] The film structure is prepared by coating methods, including evaporation coating, sputtering coating, and ion plating, using one or a combination of these methods.

[0073] The reflective layer 1 is a conductive material, which is one or a combination of gold, silver, copper, iron, aluminum, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), titanium oxide, zinc oxide, zinc-doped aluminum oxide, or graphene, and its thickness is 10 to 1500 nanometers.

[0074] The insulating layer 2 can be composed of a single layer or multiple layers of film. The material is an insulating material, generally one or more of silicon oxide, silicon nitride, silicon carbide, tungsten oxide, aluminum oxide, nickel oxide, vanadium oxide, beryllium oxide, magnesium oxide, tantalum oxide, titanium oxide, cobalt oxide, zirconium oxide, and yttrium oxide, or a composite oxide thereof, with a thickness of 10 to 1500 nanometers.

[0075] The regulating layer 3 is a semiconductor material, one or a combination of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), titanium oxide, zinc oxide, ITO / Ag / ITO, silver, zinc-doped aluminum oxide or graphene, with a thickness of 10 to 1500 nanometers.

[0076] Two thin copper conductive adhesive strands are respectively adhered to the surfaces of reflective layer 1 and regulating layer 3, serving as the counter electrode and working electrode of the electrovariable emissivity structure.

[0077] This yields a safe, reliable, and novel electrochromic emissivity structure. The color-changing function can also be optimized through heat treatment, which can be performed in a vacuum, in the atmosphere, or other atmospheres. The heat treatment temperature ranges from 10 to 600 degrees Celsius, and the time ranges from 10 to 600 minutes. Specific Implementation Method Two

[0079] An electrovariable emissivity structure was fabricated on a glass substrate;

[0080] This structure was prepared using electron beam evaporation coating technology;

[0081] The reflective layer 1 is indium tin oxide with a thickness of 200 nanometers;

[0082] Insulating layer 2 is silicon dioxide with a thickness of 550 nanometers;

[0083] The regulating layer 3 is indium tin oxide with a thickness of 600 nanometers;

[0084] After an electrovariable emissivity structure is prepared, it is heat-treated in an atmospheric atmosphere at a temperature of 300 degrees Celsius for 120 minutes.

[0085] Two thin copper conductive adhesive strands are adhered to the surfaces of reflective layer 1 and regulating layer 3, respectively, serving as the counter electrode and working electrode of the electrovariable emissivity structure. This yields a safe, reliable, and novel electrovariable emissivity structure. Figure 2 The infrared emissivity spectrum of an electrovariable emissivity structure provided in this specific embodiment two. Specific Implementation Method 3

[0087] An electrovariable emissivity structure was fabricated on a glass substrate;

[0088] This structure was prepared using electron beam evaporation coating technology;

[0089] The reflective layer 1 is indium tin oxide with a thickness of 200 nanometers;

[0090] Insulating layer 2 is silicon dioxide with a thickness of 550 nanometers;

[0091] The regulating layer 3 is indium tin oxide with a thickness of 600 nanometers;

[0092] After the electrovariable emissivity structure is prepared, no heat treatment is performed;

[0093] Two thin copper conductive adhesive strands are respectively adhered to the surfaces of the reflective layer 1 and the regulating layer 3, serving as the counter electrode and working electrode of the electrovariable emissivity structure. Compared with Specific Embodiment Two, Specific Embodiment Two is an electrovariable infrared emissivity structure with an initial low emission state; Specific Embodiment Three is an electrovariable infrared emissivity structure with an initial high emission state. Figure 3 The infrared emissivity spectrum of an electrovariable emissivity structure provided in this specific embodiment three. Specific Implementation Method Four

[0095] An electrovariable emissivity structure was fabricated on a glass substrate;

[0096] This structure was prepared using electron beam evaporation coating technology;

[0097] The reflective layer 1 is made of indium tin oxide and aluminum, with thicknesses of 200 nanometers and 180 nanometers, respectively.

[0098] Insulating layer 2 is silicon dioxide with a thickness of 550 nanometers;

[0099] The regulating layer 3 is indium tin oxide with a thickness of 600 nanometers;

[0100] After an electrovariable emissivity structure is prepared, it is heat-treated in an atmospheric atmosphere at a temperature of 300 degrees Celsius for 120 minutes.

[0101] Two thin copper conductive adhesive strands are respectively adhered to the surfaces of reflective layer 1 and regulating layer 3, serving as the counter electrode and working electrode of the electrochromic emissivity structure. Compared to Embodiment 2, Embodiment 2 is an electrochromic infrared emissivity structure that transmits in the visible band; Embodiment 4 is an electrochromic infrared emissivity structure that reflects in the visible band. Detailed Implementation Method Five

[0103] An electrovariable emissivity structure is fabricated on an aluminum sheet, which serves as both a substrate and a reflective layer 1.

[0104] Insulating layer 2 is silicon dioxide with a thickness of 550 nanometers;

[0105] The regulating layer 3 is indium tin oxide with a thickness of 600 nanometers;

[0106] After an electrovariable emissivity structure is prepared, it is heat-treated in an atmospheric atmosphere at a temperature of 300 degrees Celsius for 120 minutes.

[0107] Two thin copper conductive adhesive strands are adhered to the surfaces of reflective layer 1 and regulating layer 3, respectively, serving as the counter electrode and working electrode of the electrovariable emissivity structure. This yields a safe, reliable, and novel electrovariable emissivity structure. Specific Implementation Method Six

[0109] An electrovariable emissivity structure was fabricated on a glass substrate;

[0110] This structure was prepared using electron beam evaporation coating technology;

[0111] The reflective layer 1 is indium tin oxide with a thickness of 200 nanometers;

[0112] The insulating layer 2 is made of silicon dioxide and has a thickness of 200 nanometers;

[0113] The adjustment layer 3 is indium tin oxide with a thickness of 50 nanometers;

[0114] After an electrovariable emissivity structure is prepared, it is heat-treated in an atmospheric atmosphere at a temperature of 300 degrees Celsius for 120 minutes.

[0115] Two thin copper conductive adhesive strands are adhered to the surfaces of reflective layer 1 and regulating layer 3, respectively, serving as the counter electrode and working electrode of the electrovariable emissivity structure. This yields a safe, reliable, and novel electrovariable emissivity structure. Detailed Implementation Method Seven

[0117] An electrovariable emissivity structure was fabricated on a glass substrate;

[0118] This structure was prepared using magnetron sputtering evaporation coating technology;

[0119] The reflective layer 1 is indium tin oxide with a thickness of 200 nanometers;

[0120] The insulating layer 2 is made of silicon dioxide and tungsten oxide, with thicknesses of 300 nanometers and 300 nanometers, respectively;

[0121] The regulating layer 3 is indium tin oxide with a thickness of 500 nanometers;

[0122] After an electrovariable emissivity structure is prepared, it is heat-treated in an atmospheric atmosphere at a temperature of 300 degrees Celsius for 120 minutes.

[0123] Two thin copper conductive adhesive strands are respectively adhered to the surfaces of the reflective layer 1 and the regulating layer 3, serving as the counter electrode and working electrode of the electrovariable emissivity structure. Compared with Embodiment 2, Embodiment 2 shows an increase in emissivity when a positive bias is applied and a decrease in emissivity when a negative bias is applied; Embodiment 7 shows a decrease in emissivity when a positive bias is applied and an increase in emissivity when a negative bias is applied. Figure 4 An infrared emissivity spectrum of an electrovariable emissivity structure provided for this specific embodiment seven.

[0124] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An electrochromic emissivity structure, characterized by, The reflective layer, the insulating layer and the adjusting layer are arranged in sequence along the thickness direction, the reflective layer is used for reflecting infrared light, the preparation material of the reflective layer comprises a conductor or a semiconductor, the preparation material of the adjusting layer comprises a conductor or a semiconductor with infrared semi-transparent property, the reflective layer and the adjusting layer are respectively connected with two electrodes of a power supply, and the voltage of the electrodes is adjustable; An optical resonant cavity structure is formed between the adjusting layer and the reflective layer, the optical resonant cavity is used for adjusting the absorption of infrared light, the infrared transmittance and the absorption of the adjusting layer are changed by adjusting the voltage of the power supply, so as to adjust the amount of infrared light entering the optical resonant cavity structure, and then the infrared emissivity of the electrochromic emissivity structure is adjusted; The preparation material of the adjusting layer comprises one or a combination of indium tin oxide, fluorine-doped tin oxide, titanium oxide, zinc oxide, zinc-doped aluminum oxide or graphene; The thickness of the reflective layer is 150-250 nm, the thickness of the insulating layer is 500-800 nm, and the thickness of the adjusting layer is 500-800 nm; When the positive electrode of the power supply is connected with the adjusting layer to apply a positive bias voltage, the infrared emissivity of the electrochromic emissivity structure is increased, and when the negative electrode of the power supply is connected with the adjusting layer to apply a negative bias voltage, the infrared emissivity of the electrochromic emissivity structure is decreased; Or, The thickness of the reflective layer is 150-250 nm, the thickness of the insulating layer is 150-250 nm, and the thickness of the adjusting layer is 45-80 nm; When the positive electrode of the power supply is connected with the adjusting layer to apply a positive bias voltage, the infrared emissivity of the electrochromic emissivity structure is decreased, and when the negative electrode of the power supply is connected with the adjusting layer to apply a negative bias voltage, the infrared emissivity of the electrochromic emissivity structure is increased.

2. The electrochromic emissivity structure of claim 1, wherein, The preparation material of the reflective layer comprises one or a combination of gold, silver, copper, iron, aluminum, indium tin oxide, fluorine-doped tin oxide, titanium oxide, zinc oxide, zinc-doped aluminum oxide or graphene; The preparation material of the insulating layer comprises one or a combination of silicon oxide, silicon nitride, silicon carbide, tungsten oxide, aluminum oxide, nickel oxide, vanadium oxide, beryllium oxide, magnesium oxide, tantalum oxide, titanium oxide, cobalt oxide, zirconium oxide and yttrium oxide.

3. The electrochromic emissivity structure of claim 1, wherein, The preparation material of the adjusting layer comprises a conductor or a semiconductor subjected to heat treatment.

4. The electrochromic emissivity structure of claim 1, wherein, The voltage applied to the adjusting layer by the power supply is-5-0 V or 0-5 V.

5. The electrochromic emissivity structure of claim 1, wherein, The reflective layer is arranged on a substrate by a plating process, the insulating layer is arranged on the reflective layer by the plating process, and the adjusting layer is arranged on the insulating layer by the plating process. The substrate is a rigid substrate or an organic substrate.

6. The electrochromic emissivity structure of claim 5, wherein, The plating process comprises one or a combination of evaporation plating, sputtering plating and ion plating.

7. The electrochromic emissivity structure of claim 3, wherein, The temperature of the heat treatment is 10-600 degrees Celsius, and the time is 10-600 minutes.

Images