System and method for optical data communication using wide bandgap semiconductor detectors
By using short-wavelength optical signals and wide-bandgap semiconductor materials, the stability and signal-to-noise ratio problems of communication systems in high-temperature and harsh environments have been solved, achieving stable optical communication in high-temperature and harsh environments, which is suitable for industrial applications.
Patent Information
- Application Number
- CN202110271533.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2020-03-13
- Filing Date
- 2021-03-12
- Publication Date
- 2026-01-06
- Estimated Expiration
- 2041-03-12
AI Technical Summary
Existing data communication systems are difficult to operate effectively in high-temperature and harsh environments. Traditional systems are susceptible to electromagnetic interference and lightning strikes. Furthermore, infrared devices cannot maintain their materials and packaging at high temperatures, resulting in low signal-to-noise ratios and difficulties in modulating and distinguishing light signals.
Using short-wavelength optical signals and wide-bandgap semiconductor electronic devices, including materials such as silicon carbide and gallium nitride, for optical communication systems, optical data communication systems are composed of light sources, transmission media and detectors. The transmission media can be optical fibers or dielectric gaps, and the detectors include wide-bandgap semiconductor materials and components, which can operate in high-temperature and harsh environments.
It achieves stable optical communication in high-temperature and harsh environments, reduces sensitivity to electromagnetic interference and lightning strikes, improves the signal-to-noise ratio, supports bidirectional and multi-station communication, and is suitable for industrial applications such as distributed control systems for aircraft and satellites.
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Figure CN113395112B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The technical field relates to optical data communication systems and methods for optical signal transmission in high temperature and harsh environments. BACKGROUND
[0002] There is a growing need for communication systems that operate in high temperature and harsh environments. Conventional data communication systems typically use electrical conductors (e.g., copper) and have a significant mass associated with cabling. Cabling is susceptible to electromagnetic interference, lightning strikes, and damage to connected electronics. Alternative data communication systems use optical fibers in place of electrical conductors. Further, known optical communication systems are designed around glass and / or polymeric (plastic) fibers and operate in comparatively benign environments. Such conventional data communication systems are typically only capable of operating at low temperatures (e.g., temperatures at 125°C) and general environmental conditions.
[0003] Conventional systems can also use infrared (IR) devices that are not suitable for use at temperatures exceeding 125°C. Additionally, the materials and packaging of such IR devices (e.g., silicon) are not sustainable in high temperatures. Further, at higher temperatures, IR devices typically encounter low signal-to-noise ratios. Accordingly, communication in the IR range can be burdensome in modulating light or distinguishing received light from generated background electrons (e.g., dark current) that are not associated with the received light. SUMMARY
[0004] The following summary outlines certain embodiments that are commensurate in scope with the initially claimed disclosure. These embodiments are not intended to limit the scope of the claimed disclosure, but merely serve as a brief overview of possible forms of the disclosure. In fact, embodiments can include a variety of forms that can be similar or different from the embodiments set forth below.
[0005] Embodiments of the present disclosure relate to systems and methods for combining short wavelength optical signals and wide bandgap semiconductor electronics to enable optical communication in high temperature and harsh environments. The short wavelength optical signals include blue light, ultraviolet (UV) light, and X-ray signals. The wide bandgap semiconductors include semiconductors whose bandgap is in or around the range of 2-6 eV and any range in between. The wide bandgap materials include, for example, silicon carbide (SiC), gallium nitride (GaN), and aluminum gallium nitride (AlGaN) and / or any combination thereof. High temperatures referred to herein can include temperatures at or above at least 125 °C (e.g., 250 °C+, 300 °C+). Further, harsh environments can include environments with high electrical noise and high electromagnetic interference (EMI). Embodiments herein are useful for harsh environments such as industrial applications (e.g., applications using distributed control systems (e.g., aircraft, satellites)).
[0006] In embodiments, an optical data communication system is provided, comprising: a light source for emitting electromagnetic emissions; a transmission medium for conveying the electromagnetic emissions from the light source; and a detector for detecting the electromagnetic emissions from the transmission medium. The light detector comprises a wide bandgap semiconductor material and / or component.
[0007] In embodiments, a method of conveying optical signals in a high temperature environment is provided, comprising the steps of: encoding data as an optical signal, the optical signal being emitted by an emitter; conveying the optical signal to a detector via a transmission medium; and detecting the optical signal using the detector. The detector comprises one or more wide bandgap semiconductor materials and / or components.
[0008] The present invention provides a set of technical solutions as follows.
[0009] Technical solution 1. An optical data communication system, comprising:
[0010] a light source for emitting electromagnetic emissions;
[0011] a transmission medium for conveying the electromagnetic emissions from the light source; and
[0012] a detector for detecting the electromagnetic emissions from the transmission medium,
[0013] wherein the detector comprises a wide bandgap semiconductor material.
[0014] Technical solution 2. The system of any preceding technical solution, wherein the transmission medium is further for conveying electromagnetic emissions having a wavelength of less than or equal to 500 nm.
[0015] TECHNICAL SOLUTION 3. The system of any preceding technical solution, wherein the light source is formed at least in part from a wide bandgap semiconductor material.
[0016] TECHNICAL SOLUTION 4. The system of any preceding technical solution, wherein the transmission medium comprises an optical fiber.
[0017] TECHNICAL SOLUTION 5. The system of any preceding technical solution, wherein the light source and the detector are physically adjacent to a dielectric gap, the dielectric gap being spanned without an optical fiber intermediary.
[0018] TECHNICAL SOLUTION 6. The system of any preceding technical solution, wherein the wide bandgap semiconductor material is configured to include one or more of: a SiC photodetector; a GaN photodiode; and an AlGaN photodiode.
[0019] TECHNICAL SOLUTION 7. The system of any preceding technical solution, wherein the detector further comprises an amplifier component for amplifying the electromagnetic emissions received by the detector.
[0020] TECHNICAL SOLUTION 8. The system of any preceding technical solution, wherein the detector is further configured to operate in an avalanche mode such that the electromagnetic emissions are amplified without the use of a separate amplification component.
[0021] TECHNICAL SOLUTION 9. The system of any preceding technical solution, wherein the electromagnetic emissions are decodable when the system is operating in an environment having a temperature at or above 125°C.
[0022] TECHNICAL SOLUTION 10. The system of any preceding technical solution, wherein the detector is configured to actuate a power module.
[0023] TECHNICAL SOLUTION 11. The system of any preceding technical solution, wherein the detector and the light source are each configured to operate in a dual mode, the dual mode enabling the system to perform bidirectional communication.
[0024] TECHNICAL SOLUTION 12. The system of any preceding technical solution, wherein the light source and the detector are galvanically isolated.
[0025] TECHNICAL SOLUTION 13. A method of transmitting an optical signal in a high temperature environment, the method comprising:
[0026] encoding data into an optical signal, the optical signal being emitted by an emitter;
[0027] transmitting the optical signal to a detector via a transmission medium; and
[0028] detecting the optical signal using a detector,
[0029] wherein the detector comprises one or more wide bandgap semiconductor materials.
[0030] Technical Solution 14. The method of any preceding technical solution, further comprising decoding the optical signal received by the detector.
[0031] Technical Solution 15. The method of any preceding technical solution, further comprising amplifying the optical signal using an amplifier component within the detector prior to decoding.
[0032] Technical Solution 16. The method of any preceding technical solution, further comprising amplifying the optical signal using an avalanche mode of the detector prior to decoding.
[0033] Technical Solution 17. The method of any preceding technical solution, further comprising actuating a semiconductor switch using the detector.
[0034] Technical Solution 18. The method of any preceding technical solution, wherein the semiconductor switch is a SiC MOSFET device.
[0035] Technical Solution 19. The method of any preceding technical solution, wherein the transmission medium comprises a dielectric gap, wherein there is no fiber optic intermediary between the transmitter and the detector.
[0036] Technical Solution 20. The method of any preceding technical solution, wherein the transmission medium is a fiber optic cable. BRIEF DESCRIPTION OF DRAWINGS
[0037] These and other features, aspects, and advantages of the present application will become better understood with reference to the following detailed description and appended claims, read in light of the accompanying drawings, wherein identical numbers indicate identical elements, and in which:
[0038] Figure 1 is a block diagram of an overview of an optical data communication system in accordance with some embodiments;
[0039] Figure 2 is a block diagram of an embodiment of the optical communication system of Figure 1 wherein the transmission medium is an optical fiber;
[0040] Figure 3 is a block diagram of another configuration of the optical communication system in Figure 1 wherein the light source and the light detector are co-located;
[0041] Figure 4 This is a block diagram of another embodiment of an optical communication system, in which the light source and photodetector are capable of dual-mode operation, enabling bidirectional communication;
[0042] Figure 5 This is a flowchart of a method for transmitting optical signals according to some embodiments; and
[0043] Figure 6 The diagram illustrates optical signal degradation test data as a function of temperature using a demonstrative optical communication system without the optical fiber as described in the embodiment. Detailed Implementation
[0044] Figure 1 This is a block diagram of a simplified optical data communication system 10 according to embodiments herein. The optical data communication system 10 may include a light source 12 (e.g., an optical device), a transmission medium 14 (e.g., an optical fiber, optical coupling medium, optically transparent coupling agent, or free space), a photodetector 16 (e.g., a wide-bandgap semiconductor), and support components 18, each of which is capable of operating in high-temperature and harsh environments. The light source 12 may also be formed from the same or different wide-bandgap semiconductor material or wide-bandgap semiconductor assembly relative to the photodetector 16. As described herein, the wide-bandgap semiconductor assembly does not require a discrete wide-bandgap semiconductor device and may also be a separate wide-bandgap semiconductor material. The light source 12 may also be referred to as a transmitter or emitter. The photodetector 16 may be referred to as a receiver. The optical data communication system 10 may operate, for example, at temperatures equal to or higher than at least 125°C (e.g., 250°C, 300°C, or other relevant high temperatures) and / or in harsh environments (e.g., high-noise and / or high-EMI areas).
[0045] In an embodiment, system 10 may include multiple light sources 12 and multiple detectors 16, which utilize a single fiber optic cable to create a multi-drop communication bus. Furthermore, system 10 may be configured to protect the transmission of optical signals from electromagnetic interference and lightning by eliminating multiple conduction paths between multiple nodes within the distributed system. For example, the multiple nodes may be intelligent components (e.g., sensors, actuators, or distributed control modules) on an aircraft engine. In such applications, one or more nodes may have bidirectional communication capabilities, while other nodes may have unidirectional communication capabilities only. One or more of the multiple nodes may be configured to perform unidirectional or bidirectional communication between sensors within the aircraft engine and a central controller.
[0046] In this embodiment, the light source 12 and the detector 16 are electrically isolated. The light source 12 and / or the photodetector 16 of the optical data communication system 10 may each be made of or comprised of a wide-bandgap semiconductor material or a combination of materials capable of withstanding high temperatures and operating at short wavelengths (e.g., blue light, ultraviolet (UV) light, and X-ray signals). The light source 12 encodes a message into an optical signal or electromagnetic emission, which is transmitted to the photodetector 16 via a transmission medium 14. After receiving the optical signal, the photodetector 16 may decode the message carried by the optical signal. The optical signal may also be amplified by the photodetector 16 in two different ways before decoding. In one embodiment, the photodetector 16 includes one or more optional amplifier circuits or components 26 for amplifying the signal after it is detected and before it is decoded. Alternatively, the photodetector 16 may have a built-in avalanche mode function that does not require a separate amplifier circuit or component 26. This will be described in more detail below.
[0047] Optical signals, or light, are transmitted from the light source 12 to the photodetector 16 via the transmission medium 14. In other words, the light source 12 encodes a message into an optical signal, which is then transmitted to the photodetector 16 via the transmission medium 14. In one embodiment of the optical data communication system 10, the light source 12 and the photodetector 16 are connected via optical fiber 4, such as... Figure 2 As shown in the diagram. In another embodiment, the light source 12 and the photodetector 16 are co-located, or in other words, physically adjacent and separated by a gap 2 (e.g., free space, optically transparent coupling agent), as shown in the diagram. Figure 3 As shown, it can be spanned without an optical fiber intermediary. These embodiments will be discussed in more detail below.
[0048] Light source 12 may include a light-emitting diode (LED) (e.g., a GaN LED), a laser diode, an electron beam emitter (vacuum tube), or any combination thereof. Furthermore, light source 12 may generate light or electromagnetic emission (e.g., blue light, ultraviolet (UV) light, and X-rays) with a short wavelength of less than or equal to 500 nm. To detect the short-wavelength light transmitted by light source 12, photodetector 16 may be formed of one or more wide-bandgap semiconductor materials. Such wide-bandgap semiconductor materials are capable of withstanding high temperatures and harsh environments, such as SiC and gallium nitride (GaN). Wide-bandgap semiconductors allow the device to operate at much higher voltages and temperatures, including temperatures greater than 250°C. Furthermore, photodetector 16 may include a photodiode, a phototransistor, a scintillator coupled to the photodetector, or any combination thereof. Photodetector 16 may also include one or more photomultiplier tubes.
[0049] The optical data communication system 10 may include various configurations. For example... Figure 2As illustrated, the light source 12 and the photodetector 16 can be connected via a transmission medium 14, which may be in the form of an optical fiber 4 or an optically transparent coupling agent. The optical fiber 4 may be enclosed within a capillary to help protect it from physical materials such as dirt, ground, rain, etc. The transmission medium 14 may include a suitable covering material (e.g., gold, polyimide) for operation in high-temperature and harsh environments. Figure 3 In another embodiment illustrated, the light source 12 and the photodetector 16 are co-located or physically adjacent, such that the transmission medium 14 is a gap 2 or free space that can be spanned without an optical fiber intermediary.
[0050] Let's look at it again. Figure 1 The light source 12, photodetector 16, transmission medium 14, and support component 18 are each capable of operating in high-temperature and harsh environments. The support component 18 may use silicon-on-insulator (SOI) or silicon carbide (SiC) technology and may include a signal processing circuitry system 20 (e.g., one or more sensors, sensing elements, or energy harvesting devices). In embodiments, the photodetector 16 and the signal processing circuitry system 20 may be integrated on the same semiconductor chip or substrate (e.g., a silicon carbide chip). In some embodiments, the support component 18 may include an optics component 22. The light source 12 may generate one or more light pulses into the transmission structure for transmission through the optics component 22.
[0051] Optical assembly 22 may include a variety of suitable optical processing components, such as one or more of the following: lenses, collimators, optical waveguides, variable attenuators, pump filters, erbium-doped fiber amplifiers (EDFAs), couplers, pulser assemblies, mirrors (e.g., Faraday mirrors), compensator assemblies, discrete fiber coupling devices, pump lasers, etc. Furthermore, optical assembly 22 may include combinations of the above components. For example, in addition to fiber optic components (e.g., coils of erbium-doped fiber cables), the EDFA may also include one or more pump lasers and one or more wavelength couplers. After optical processing, light from light source 12 can be transmitted to photodetector 16 via transmission medium 14. Furthermore, optical assembly 22 can be used to couple light from transmission medium 14 to photodetector 16.
[0052] Although described as an optical communication path between light source 12 and photodetector 16, it should be understood that the optical data communication system 10 may include one or more of each of the depicted components (e.g., light source 12, photodetector 16, optical fiber 4) to provide one or more optical communication paths that may or may not be aggregated together. Furthermore, while a single optical signal (e.g., an optical pulse) may be described herein, it should be understood that in operation, one or more light sources (e.g., optical pulses) may be transmitted from light source 12 to photodetector 16.
[0053] As mentioned above, optical data communication systems can include various configurations. Therefore, Figure 2 The configuration of an optical data communication system 10 is depicted, wherein a light source 12 and a photodetector 16 are separated by a transmission medium 14, which is one or more optical fibers 4. Data (e.g., digital voltage data, analog voltage data) is input to the light source 12, and optical signals are generated by the light source 12 and then transmitted from the light source 12 to the photodetector 16 via the optical fiber 4. The data transmitted via the optical fiber 4 can then be decoded by the detector 16 and output as digital voltage data or a message.
[0054] Figure 3 Another configuration of the optical data communication system 10 is depicted, in which the light source 12 and the photodetector 16 are electrically isolated. In this configuration, the light source 12 transmits light to the photodetector 16 via a transmission medium 14, wherein the transmission medium 14 is a gap 2 (e.g., an optically transparent coupling agent, free space), in which there is no optical fiber medium. In this configuration, the light source 12 and the photodetector 16 are co-located such that the light source 12 and the photodetector 16 are physically adjacent to the gap 2 (e.g., free space).
[0055] In this embodiment, gap 2 comprises a substantially optically transparent dielectric (e.g., suitable effective insulation) between the light source 12 and the photodetector 16. The physical separation between the light source 12 and the photodetector 16 is chosen to achieve the desired dielectric withstand. The desired dielectric withstand prevents dielectric breakdown in the presence of high voltage. In this embodiment, there is no direct conductive path. Electrical (current) isolation can be used to scale gap 2. The size of gap 2 can also be small. For example, gap 2 can have a length (e.g., 0.1 mm, 1 mm, or 5 mm) ranging from 0.1 mm to 5 mm between the light source 12 and the detector 16.
[0056] In some embodiments, the photodetector 16 of the optical data communication system 10 can be used to actuate the power module 24 (e.g., a power transistor or semiconductor switch) after receiving a signal. The power module 24 may also include one or more of the following components: resistors; diodes; bipolar junction transistors (BJTs); dielectric gaps; insulated gate bipolar transistors (IGBTs); thyristors; gate drivers; SiC metal-oxide-semiconductor field-effect transistors (MOSFETs); GaN FETs; and GaN high electron mobility transistors (HEMTs). The power module 24 can be used to control another component or device (not shown) external to the optical data communication system 10, such as a motor, power conversion module, and / or a power supply device for another mechanical device (e.g., a valve, fan, rotor, pump, actuator, etc.).
[0057] In one embodiment, relative to Figure 2 and Figure 3 In two configurations, the SiC photodiode can be used as the photodetector 16. In this embodiment, two main methods for amplifying the signal are possible. In one method, by operating in avalanche mode or regime (where photons are received and electrons are output in a cascaded manner), the SiC photodiode can include built-in detector gain. In doing so, the signal is amplified without the need for a separate amplification component or circuitry. A second method involves adding one or more optional amplifier circuits or amplifier components 26 to the photodetector 16. This is done using monolithic integration on the same semiconductor substrate or by using a heterogeneous integration platform (e.g., silicon interpolators and / or ceramic substrates). Therefore, the detector 16 and amplifier component 26 can be fabricated on the same semiconductor substrate, resulting in a reduction in manufacturing costs. Alternatively, the amplifier component 26 can be, for example, an SOI or SiC device.
[0058] In another embodiment, a GaN photodetector can be used as photodetector 16. In yet another embodiment, an aluminum gallium nitride (AlGaN) photodiode can be used as photodetector 16. The AlGaN photodiode can have a tunable wavelength based on the overlap of the aluminum (Al) to gallium (Ga) ratio. Wavelength overlap can be improved or adjusted by tuning the emission spectrum associated with the light source 12 to the optically sensitive region associated with the photodetector 16. Furthermore, wavelength tuning can be used to operate the data communication system 10 with multiple wavelengths sharing the same transmission medium 14, thereby creating multiple data channels and allowing for higher overall data rates or simultaneous communication between multiple pairs of light sources 12 and photodetectors 16. Along with SiC and GaN, AlGaN can operate in high-temperature and harsh environments and is compatible with light associated with short wavelengths (e.g., less than 500 nm).
[0059] Figure 2 Optical communication configuration andFigure 3 Optical isolation configurations can be useful in distributed systems with intelligent components. In particular, the optical fiber used in the optical data communication system 10 can outperform cables used in conventional systems in terms of EMI immunity, size, and weight. In cable-based communication systems, transient voltage suppressors can be used to protect electronic components from electrical nodes with high EMI or lightning strikes. These suppressors can have large capacitances, which increase the load on the cable, thereby reducing communication speed. However, since the optical data communication system 10 can utilize optical fiber (e.g., fiber optic cable 4), electrical protection can be omitted from the cable because the optical fiber is not conductive. Therefore, the communication speed associated with the optical fiber is unaffected by interference. Furthermore, unlike cables, optical fibers are less susceptible to EMI leakage.
[0060] Furthermore, optical fibers are more efficient than electrical cables, especially in harsh environments, including high-noise environments where low power usage is effective. In such high-noise environments, conventional communication systems with electrical components use high-speed electrical line drivers to drive cables, thus using a much larger amount of power compared to optical communication systems. For example, an optical fiber can transmit optical power to low-energy devices (e.g., sensors) within a support component 18 in an optical data communication system 10. The support component 18 can be coupled to and communicate with both the light source 12 and the support component 18. The support component 18 harvests energy from the light source 12 and powers both the photodetector 16 and the support component 18, thereby eliminating the need for a separate electrical connection to power devices on the lamp detector side. In one embodiment, a single optical fiber can transmit power to a sensor and read data measured from the sensor. In another embodiment, one optical fiber can transmit power to a sensor while another optical fiber can read data measured from the sensor.
[0061] In another embodiment, Figure 2 The optical communication configuration may include a photodetector 16 (e.g., a photodiode, photodetector) permanently attached to the optical fiber 4. According to this embodiment, the electrical connector may reside in the electrical domain. In some embodiments, with Figure 2 and Figure 3The optical signals associated with the two configurations may include optical triggering devices (which may be associated with a discrete actuation system), devices for remotely turning on or off the optical data communication system 10, etc. For example, a sensor installed in the optical data communication system 10 can be turned on when a measurement is desired. On the other hand, a sensor installed in the optical data communication system 10 can be turned off when a measurement is not desired. Furthermore, the data associated with the two configurations can be signal encoded (e.g., zero-mean encoding) to facilitate clock recovery, self-timing operation, baseline tracking, and different encoding schemes (e.g., pulse position modulation, pulse width modulation, pulse frequency modulation). Signal encoding of the data can be useful in high-temperature or harsh environments (where processing power may be limited or there is a high noise level for the signal).
[0062] Figure 4 The diagram illustrates another embodiment of the optical communication system 40. In this configuration, the same type of dual-mode device can be used as a light source 42 and a photodetector 46, and data communication using these devices can be bidirectional. The operation of each of the dual-mode components 42, 46 depends on the direction of signal transmission. For example, when the optical signal is transmitted from left to right, source / detector 42 operates as a light source, while source / detector 46 acts as a photodetector. Conversely, when the signal transmission is reversed to right to left, source / detector 46 acts as a light source, while source / detector 42 acts as a photodetector. The same transmission medium 14 is used in both signal communication directions. Additionally, as for... Figure 2 and Figure 3 The transmission medium 14 can be gap 2 or optical fiber 4.
[0063] exist Figure 4 In both configurations of system 40 (i.e., with or without optical fiber 14 as the transmission medium), communication can be optimized in one direction but not in the other. For example, data communication from source 42 to detector 46 can be more optimized than data communication from detector 46 to light source 42, and vice versa. Furthermore, in system 40, the coupling from optical fiber 44 as the transmission medium 14 to photodetector 46 (e.g., photodetector and photodiode) can be lensed or not.
[0064] Figure 5This is a flowchart of an exemplary method 50 for transmitting optical signals in a high-temperature environment. Method 50 includes the step of encoding data 52 into an optical signal emitted by a short-wavelength light source or transmitter. Method 50 also includes transmitting the optical signal 54 to a detector via a transmission medium. Method 50 further includes the step of detecting the optical signal 56 using a wide-bandgap semiconductor as a detector. Method 50 also includes decoding the data received by the detector 58. Method 50 may include an optional step of amplifying 59 the optical signal received by the detector after detecting 56 but before decoding it 58. The amplification step 59 may be performed using an avalanche mode of the detector or using a separate amplifier component or circuitry within the detector. Method 50 may also include using the detector to actuate a semiconductor switch 26, as previously described. Other components of the embodiments described herein may also be used to perform various steps of systems 10 and 40 or embodiments otherwise described herein.
[0065] Figure 6 The figures illustrate demonstration test data for an optical communication system using a SiC photodiode as the photodetector 16. The x-axis of both graphs 60 and 70 represents the light source intensity (based on LED current input). The y-axis of graphs 60 and 70 represents the photoelectric flux received by the SiC photodiode. Figure 6 Chart 60 for Figure 3 The illustration shows an embodiment of the configuration of the optical communication system 10, demonstrating a test of the optical signal received by the detector. (See also...) Figure 6 As shown in Figure 60, the current output of the signal transmitted by the communication system decreases with increasing ambient temperature. As provided in the sample test data, the obtained signal level remains usable up to approximately 325°C. In other words, the output signal value can be decoded within an acceptable signal-to-noise ratio relative to the noise floor of the SiC photodiode, as illustrated by the horizontal dashed line. Figure 6 The test data provided are for illustrative purposes only and are not intended to limit the capabilities of the system embodiments described herein. Figure 6 The signal-to-noise ratio or operating temperature provided in the text.
[0066] Some of the beneficial effects and advantages associated with the embodiments described herein include, but are not limited to, providing a data communication system that is lightweight, has reduced susceptibility to lightning damage, and is capable of operating in high-temperature and harsh environments. Therefore, the embodiments described herein are useful for industrial applications, such as those using distributed control systems (e.g., aircraft, satellites, etc.). Additionally, the use of wide-bandgap devices in the transmitter and detector embodiments described herein enables operation across the blue to UV spectrum. Accordingly, communication speeds or signal transmission rates can be in the range of 2 Mbps or approximately 2 Mbps, and within the range of 100 Kbps to 50 Mbps or higher, depending on the operating temperature.
[0067] Further aspects of the invention are provided by way of the subject matter of the following provisions:
[0068] 1. An optical data communication system comprising: a light source for emitting electromagnetic emissions; a transmission medium for transmitting electromagnetic emissions from the light source; and a detector for detecting electromagnetic emissions from the transmission medium, wherein the detector comprises a wide bandgap semiconductor material.
[0069] 2. The system as described in any of the preceding clauses, wherein the electromagnetic emission has a wavelength of less than or equal to 500 nm.
[0070] 3. The system as described in any of the preceding clauses, wherein the light source is formed from a wide-bandgap semiconductor.
[0071] 4. The system as described in any of the preceding clauses, wherein the transmission medium comprises optical fiber.
[0072] 5. The system as described in any of the preceding clauses, wherein the light source and the detector are physically adjacent to a dielectric gap that is crossed without an optical fiber medium.
[0073] 6. The system as described in any of the preceding clauses, wherein the wide bandgap semiconductor material is configured to include one or more of the following: a SiC photodetector; a GaN photodiode; and an AlGaN photodiode.
[0074] 7. The system as described in any of the preceding clauses, wherein the detector further includes an amplifier assembly for amplifying the electromagnetic emission received by the detector.
[0075] 8. The system as described in any of the preceding clauses, wherein the detector is further configured to operate in avalanche mode, thereby amplifying the electromagnetic emission without the need for a separate amplification component.
[0076] 9. The system as described in any of the preceding clauses, wherein the electromagnetic emission is decoded when the system is operated in an environment having a temperature at or above 125°C.
[0077] 10. The system as described in any of the preceding clauses, wherein the detector is configured to actuate a power module.
[0078] 11. The system as described in any of the preceding clauses, wherein the detector and the light source are each configured to operate in dual mode, the dual mode enabling the system to perform bidirectional communication.
[0079] 12. The system as described in any of the preceding clauses, wherein the light source and the detector are electrically isolated.
[0080] 13. A method for transmitting an optical signal in a high-temperature environment, the method comprising: encoding data into an optical signal, the optical signal being transmitted by a transmitter; transmitting the optical signal to a detector via a transmission medium; and using the detector to detect the optical signal, wherein the detector comprises one or more wide-bandgap semiconductor materials.
[0081] 14. The method as described in any of the preceding clauses, wherein the method further comprises: decoding the optical signal received by the detector.
[0082] 15. The method as described in any of the preceding clauses, the method further comprising: amplifying the optical signal using an amplifier assembly within the detector prior to decoding.
[0083] 16. The method as described in any of the preceding clauses, the method further comprising: amplifying the optical signal using the avalanche mode of the detector prior to decoding.
[0084] 17. The method as described in any of the preceding clauses, the method further comprising: using the detector to actuate a semiconductor switch.
[0085] 18. The method as described in any of the preceding clauses, wherein the semiconductor switch is a SiC MOSFET device.
[0086] 19. The method as described in any of the preceding clauses, wherein the transmission medium includes a dielectric gap, and there is no optical fiber medium between the transmitter and the detector.
[0087] 20. The method as described in any of the preceding clauses, wherein the transmission medium is an optical fiber cable.
[0088] One or more specific embodiments of this disclosure are described herein. To provide a concise description of these embodiments, not all features of an actual implementation are described in this specification. It should be understood that, as in any engineering or design project, the development of any such actual implementation requires numerous implementation-specific decisions to achieve the developer's specific goals, such as compliance with system-related and business-related constraints, which may vary from one implementation to another. Furthermore, it should be understood that such development efforts can be complex and time-consuming, but will still be routine tasks for those skilled in the art to design, prepare, and manufacture using this disclosure.
[0089] When describing elements of various embodiments of this disclosure, the articles “a,” “an,” “the,” and “the” are intended to indicate the presence of one or more elements. The terms “comprising,” “including,” and “having” are intended to include and indicate the presence of additional elements besides those listed. One or more specific embodiments of the embodiments described herein will now be described. To provide a concise description of these embodiments, not all features of an actual implementation are described in this specification.
[0090] This written description uses examples including best practices to disclose embodiments of the invention and also enables any person skilled in the art to practice embodiments of the invention, including making and using any apparatus or system and performing any combination of methods. The scope of the invention includes the examples provided herein, as well as other examples that may occur to those skilled in the art. Such other examples are expected to be within the scope of the claims if they have structural elements that are exactly the same as the literal language of the claims, or if they include equivalent structural elements that have non-substantially different literal language from the claims.
[0091] Parts list
[0092] Optical Data Communication System 10
[0093] Light source 12
[0094] Transmission medium 14
[0095] Detectors 16, 46
[0096] Fiber 4
[0097] Dielectric gap 2
[0098] Amplifier assembly 26
[0099] Power Module 24
[0100] Methods for transmitting optical signals 50
[0101] Encode the data into optical signals 52
[0102] The optical signal is transmitted to detector 54.
[0103] Detecting optical signals using a detector 56
[0104] Decoding the optical signals received by the detector 58
[0105] Amplify optical signals 59.
Claims
1. An optical data communication system, comprising: a light source to emit electromagnetic emissions; a transmission medium to convey the electromagnetic emissions from the light source; an amplifier assembly to amplify the electromagnetic emissions received by a detector; and the detector to detect the electromagnetic emissions from the transmission medium, wherein the detector and the amplifier assembly comprise the same wide bandgap semiconductor material, and the amplifier assembly is added to the detector by using monolithic integration on the same semiconductor substrate or by using a heterogeneous integration platform.
2. The system of claim 1, wherein, the transmission medium is further to convey electromagnetic emissions having a wavelength less than or equal to 500 nm.
3. The system of claim 1, wherein, the light source is formed at least in part from a wide bandgap semiconductor material.
4. The system of claim 1, wherein, the transmission medium comprises an optical fiber.
5. The system of claim 1, wherein, the light source and the detector are physically adjacent to a dielectric gap that is spanned without an optical fiber intermediary.
6. The system of claim 1, wherein, the wide bandgap semiconductor material is configured to comprise one or more of: a SiC photodetector; a GaN photodiode; and an AlGaN photodiode.
7. The system of claim 1, wherein, the detector is further configured to operate in an avalanche mode such that the electromagnetic emissions are amplified without using a separate amplification assembly.
8. The system of claim 1, wherein, the electromagnetic emissions are decodable when the system is operating in an environment having a temperature at or above 125 °C.
9. The system of claim 1, wherein, the detector is configured to actuate a power module.
10. The system of claim 1, wherein, the detector and the light source are each configured to operate in a dual mode that enables the system to perform bidirectional communication.
11. The system of claim 1, wherein, the light source and the detector are galvanically isolated.
12. A method of conveying an optical signal in a high temperature environment, the method comprising: encoding data as the optical signal, the optical signal being emitted by an emitter; conveying the optical signal to a detector via a transmission medium; amplifying the optical signal received by the detector using an amplifier assembly; and detecting the optical signal using the detector, wherein the detector and the amplifier assembly comprise the same one or more wide bandgap semiconductor materials, and the amplifier assembly is added to the detector by using monolithic integration on the same semiconductor substrate or by using a heterogeneous integration platform.
13. The method of claim 12, further comprising: decoding the optical signal received by the detector.
14. The method of claim 13, further comprising: amplifying the optical signal using an avalanche mode of the detector prior to decoding.
15. The method of claim 12, further comprising: actuating a semiconductor switch using the detector.
16. The method of claim 15, wherein, the semiconductor switch is a SiC MOSFET device.
17. The method of claim 12, wherein, the transmission medium comprises a dielectric gap, wherein there is no optical fiber intermediary between the emitter and the detector.
18. The method of claim 12, wherein, the transmission medium is an optical fiber cable.
Citation Information
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