Mask assembly, apparatus for manufacturing a display device, and method for manufacturing a display device

Abstract

A mask assembly, an apparatus for manufacturing a display device, and a method for manufacturing a display device are provided. The mask assembly includes: a mask frame including an opening; and a mask disposed on the mask frame and including a deposition region and a non-opening region disposed around the deposition region, the deposition region facing the opening to receive deposition material. The width of the non-opening region in the longitudinal direction of the mask is approximately 200 μm to approximately 500 μm.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0036430, filed on March 25, 2020, which is incorporated herein by reference for all purposes, as fully set forth herein. Technical Field

[0003] Exemplary embodiments of the present invention generally relate to mask assemblies and apparatus for manufacturing display devices, and more specifically, to a mask assembly having improved deposition yield and a method for manufacturing display devices. Background Technology

[0004] With the development of the information society, the demand for display devices used to display various types of images is increasing. In the field of display devices, large-size cathode ray tubes (CRTs) have rapidly evolved into thin, lightweight, and large-area flat panel displays (FPDs). Examples of FPDs include liquid crystal displays (LCDs), plasma display panels (PDPs), organic light-emitting diode displays (OLEDs), and electrophoretic displays (EDs).

[0005] OLEDs in display devices include organic light-emitting diodes, which include a counter electrode, a pixel electrode, and an emitter layer. The counter electrode, pixel electrode, and emitter layer can be formed via various methods, one of which is a separate deposition method. In this separate deposition method, a fine metal mask (FMM) is extended and attached to a mask frame, and deposition material is deposited on the surface on which deposition is to be performed.

[0006] The information disclosed in this background section is only for understanding the background technology of the inventive concept, and therefore may contain information that does not constitute prior art. Summary of the Invention

[0007] One aspect of this disclosure is to provide a mask assembly and an apparatus for manufacturing a display device. The apparatus constructed according to exemplary embodiments of the present invention can have improved pixel position accuracy (PPA).

[0008] Additional aspects will be set forth in part in the description which follows, and will become apparent in part from the description, or may be learned by practice of the embodiments set forth in this disclosure.

[0009] According to one or more embodiments of the present invention, a mask assembly includes: a mask frame including an opening and surrounding the opening; and a mask disposed on the mask frame and including a deposition area and a non-opening area surrounding the deposition area, the deposition area facing the opening to receive deposited material, wherein the non-opening area has a width of approximately 200 μm to approximately 500 μm in the length direction of the mask.

[0010] According to one embodiment, the non-opening area of ​​the mask may include a first portion and a second portion, the second portion having a thickness less than that of the first portion.

[0011] According to one embodiment, the second portion can be obtained by half-etching in the thickness direction of the mask.

[0012] According to one embodiment, the non-opening region may surround at least a portion of the deposition region.

[0013] According to one embodiment, the mask frame may further include a support rod extending in a direction intersecting the length direction of the mask.

[0014] According to one embodiment, the non-opening area of ​​the mask may overlap with the support rod.

[0015] According to one embodiment, the mask may further include a welded area that is welded and fixed to the mask frame.

[0016] According to one embodiment, the welding area can be provided at both ends of the mask.

[0017] According to one embodiment, the welding area of ​​the mask may include a first weld nugget.

[0018] According to one embodiment, the non-opening region of the mask may include a second melting core.

[0019] According to one embodiment, the width of the mask may be smaller than the width of the opening, and multiple masks may be mounted on the mask frame.

[0020] According to one or more embodiments, an apparatus for manufacturing a display device includes: a chamber in which a substrate is disposed; a deposition source disposed in the chamber and configured to supply deposition material into the chamber; and a mask assembly disposed facing the deposition source and configured to receive the deposition material and deposit the deposition material onto the substrate. The mask assembly may include: a mask frame including an opening; and a mask disposed on the mask frame and including a deposition region and a non-opening region surrounding the deposition region, the deposition region facing the opening to receive the deposition material. The width of the non-opening region in the longitudinal direction of the mask is approximately 200 μm to approximately 500 μm.

[0021] According to one embodiment, the non-opening area of ​​the mask may include a first portion and a second portion, the second portion having a thickness less than that of the first portion.

[0022] According to one embodiment, the second portion can be obtained by half-etching in the thickness direction of the mask.

[0023] According to one embodiment, the non-opening region may surround at least a portion of the deposition region.

[0024] According to one embodiment, the mask frame may further include a support rod extending in a direction intersecting the length direction of the mask.

[0025] According to one embodiment, the non-opening area of ​​the mask may overlap with the support rod.

[0026] According to one embodiment, the mask may further include welded areas that are welded and fixed to the mask frame, and the welded areas may be provided at both ends of the mask.

[0027] According to one embodiment, the welding area of ​​the mask may include a first weld nugget, and the non-opening area of ​​the mask may include a second weld nugget.

[0028] According to one or more embodiments, a method of manufacturing a display device includes: forming a pixel electrode; forming an emission layer on the pixel electrode using the apparatus described above for manufacturing a display device; and forming a counter electrode on the emission layer.

[0029] These and / or other aspects will become apparent and more readily understood from the following description of the embodiments, claims, and drawings.

[0030] It should be understood that the foregoing general description and the following detailed description are exemplary and illustrative, and are intended to provide further explanation of the claimed invention. Attached Figure Description

[0031] The above and other aspects, features and advantages of specific embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0032] Figure 1 This is a schematic cross-sectional view illustrating an apparatus for manufacturing a display device according to an exemplary embodiment of the present invention;

[0033] Figure 2 This is a perspective view illustrating a mask assembly according to an exemplary embodiment of the present invention;

[0034] Figure 3 This is a schematic plan view illustrating a mask according to an exemplary embodiment of the present invention;

[0035] Figure 4 This is a schematic plan view illustrating a mask according to an exemplary embodiment of the present invention;

[0036] Figure 5 and Figure 6 This is a schematic cross-sectional view illustrating a mask according to an exemplary embodiment of the present invention;

[0037] Figure 7 , Figure 8 and Figure 9 This is a schematic plan view illustrating a mask according to an exemplary embodiment of the present invention;

[0038] Figure 10 This is a schematic perspective view illustrating a display device manufactured by an apparatus for manufacturing a display device according to an exemplary embodiment of the present invention; and

[0039] Figure 11 This is a schematic cross-sectional view illustrating a display device manufactured by an apparatus for manufacturing display devices according to an exemplary embodiment of the present invention. Detailed Implementation

[0040] In the following description, numerous specific details are set forth for illustrative purposes to provide a thorough understanding of various exemplary embodiments or implementations of the invention. As used herein, “embodiment” and “implementation” are interchangeable terms and are non-limiting examples of apparatus or methods employing one or more inventive concepts disclosed herein. However, it will be apparent that various exemplary embodiments may be practiced without these specific details or with one or more equivalent arrangements. In other instances, well-known structures and apparatuses are shown in block diagram form to avoid unnecessarily obscuring the various exemplary embodiments. Furthermore, the various exemplary embodiments may be different, but are not necessarily exclusive. For example, the specific shape, configuration, and characteristics of one exemplary embodiment may be used or implemented in another exemplary embodiment without departing from the inventive concept.

[0041] Unless otherwise stated, the exemplary embodiments illustrated are to be understood as exemplary features providing details of variations in some ways in which the inventive concept can be implemented in practice. Therefore, unless otherwise stated, features, components, modules, layers, films, panels, areas and / or aspects of various embodiments (hereinafter individually or collectively referred to as “elements”) may be combined, separated, interchanged and / or rearranged without departing from the inventive concept.

[0042] Crosshairs and / or shading are typically used in accompanying drawings to clarify the boundaries between adjacent elements. Thus, unless otherwise stated, the presence or absence of crosshairs or shading does not express or indicate any preference or requirement for the specific material, material properties, dimensions, proportions, commonalities, and / or any other characteristics, properties, etc., of the illustrated elements. Furthermore, in the accompanying drawings, the dimensions and relative dimensions of elements may be enlarged for clarity and / or descriptive purposes. When exemplary embodiments can be implemented differently, the specific process sequence may be performed differently from the described sequence. For example, two consecutively described processes may be performed substantially simultaneously or in the reverse order of the described sequence. Furthermore, the same reference numerals indicate the same elements.

[0043] When a component or layer is referred to as "on another component or layer," "connected to," or "attached to" another component or layer, the component or layer may be directly on, directly connected to, or attached to the other component or layer, or there may be intermediate components or intermediate layers. However, when a component or layer is referred to as "directly on another component or layer," "directly connected to," or "directly attached to" another component or layer, there are no intermediate components or intermediate layers. Therefore, the term "connection" can refer to a physical connection, electrical connection, and / or fluid connection with or without intermediate components. Furthermore, the D1, D2, and D3 axes are not limited to the three axes of a Cartesian coordinate system such as the x, y, and z axes, and can be interpreted in a broader sense. For example, the D1, D2, and D3 axes can be perpendicular to each other, or they can represent different directions that are not perpendicular to each other. For the purposes of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" can be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as XYZ, XYY, YZ, and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0044] Although the terms “first,” “second,” etc., may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Therefore, without departing from the teachings of this disclosure, the first element discussed below may be referred to as the second element.

[0045] For descriptive purposes, spatial relative terms such as “below,” “under,” “below,” “down,” “above,” “above,” “higher,” and “side” (e.g., as in a “sidewall”) may be used herein to describe the relationship between one element and another as shown in the figures. In addition to the orientations depicted in the figures, spatial relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture. For example, if the device in the figure is flipped, an element described as “below” or “under” other elements or features would then be positioned “above” said other elements or features. Thus, the exemplary term “below” can encompass both “above” and “below” orientations. Furthermore, the device may be positioned in other orientations (e.g., rotated 90 degrees or in other orientations), and the spatial relative descriptive terms used herein shall be interpreted accordingly.

[0046] The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, the singular forms “a,” “a,” and “described” are also intended to include the plural forms unless the context clearly indicates otherwise. Furthermore, when used in this specification, the terms “comprising” and / or “including” indicate the presence of the stated features, integrals, steps, operations, elements, components, and / or combinations thereof, but do not preclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or combinations thereof. It should also be noted that, as used herein, the terms “basically,” “about,” and other similar terms are used as approximate terms rather than terms of degree, and thus are used to account for inherent deviations in measurements, calculated values, and / or provided values ​​that would be recognized by one of ordinary skill in the art.

[0047] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure is a part. Terms (such as those defined in general dictionaries) shall be interpreted as having a meaning consistent with their meaning in the context of the relevant field and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0048] Referring now to embodiments in detail, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals always indicate the same elements. In this regard, present embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, embodiments are described below only by reference to the accompanying drawings to illustrate various aspects of this specification. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout this disclosure, the expression “at least one of a, b, and c” indicates only a, only b, only c, both a and b, both a and c, both b and c, all or variations thereof.

[0049] Because this disclosure allows for various modifications and multiple embodiments, specific embodiments will be illustrated in the figures and described in detail in the written description. Hereinafter, the effects and features of the inventive concept, as well as methods of implementing them, will be described more fully with reference to the accompanying drawings, in which embodiments of the disclosure are illustrated. However, this disclosure may be implemented in many different forms and should not be construed as limited to the embodiments set forth herein.

[0050] It will be understood that although the terms “first,” “second,” etc., may be used in this document to describe various components, these components should not be limited by these terms. These terms are only used to distinguish one component from another.

[0051] As used herein, unless the context clearly indicates otherwise, the singular forms “a,” “a,” and “the” are intended to include the plural forms as well.

[0052] It will also be understood that the terms “comprising” and / or “including” as used herein indicate the presence of the stated features or components, but do not exclude the presence or addition of one or more other features or components.

[0053] It will be understood that when a layer, area, or component is referred to as "formed on another layer, area, or component," that layer, area, or component can be formed directly or indirectly on said other layer, area, or component. That is, for example, intermediate layers, areas, or components may exist.

[0054] For ease of explanation, the dimensions of the components in the figures may be enlarged. For example, since the dimensions and thicknesses of the parts in the figures are arbitrarily illustrated for ease of explanation, the following embodiments are not limited thereto.

[0055] In this specification, "A and / or B" means A or B, or A and B. The expression "at least one of A and B" means only A, only B, both A and B, or variations thereof.

[0056] In the following embodiments, the meaning of a line extending in a first direction or a second direction includes not only extending in a straight line in the first direction or a second direction, but also extending in a zigzag or curved shape in the first direction or a second direction.

[0057] In the following embodiments, when referred to as a "plane," it means when viewing the object from above, and when referred to as a "section," it means when viewing a section formed by vertically cutting the object from the side. In the following embodiments, when referred to as "overlap," it includes both "plane" overlap and "section" overlap.

[0058] One or more embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. Regardless of the drawing numbers, the same or corresponding parts are given the same reference numerals.

[0059] Figure 1 This is a schematic cross-sectional view illustrating an apparatus configured to manufacture a display device according to an embodiment. Figure 2 This is a perspective view illustrating a mask assembly according to an embodiment, and Figure 3 This is a schematic plan view illustrating a mask according to an embodiment.

[0060] Reference Figure 1 The device 1, configured to manufacture a display device, may include a chamber 310, a shielding unit 320, a deposition source 330, a substrate support 340, a mask support 350, a magnetic generator 360, a pressure regulator 370, and a mask assembly 1000.

[0061] The chamber 310 may have a space formed therein, and a portion of the chamber 310 may be formed with an opening, allowing the substrate 100 to be removed from or received into the chamber 310. A shielding unit 320, including a gate valve or the like, may be arranged in the opening portion of the chamber 310, so that the shielding unit 320 can be selectively opened or closed.

[0062] The deposition source 330 can receive deposition material for forming an organic layer or the like on the substrate 100. The deposition source 330 can then evaporate or sublimate the deposition material by applying energy (e.g., thermal, light, or vibrational energy). In one embodiment, the deposition source 330 can be arranged in a chamber 310 and configured to supply deposition material into the chamber 310.

[0063] The sedimentation source 330 can be replaced. When the sedimentation source 330 runs out of the received sediment material, it can be replaced by a new sedimentation source 330.

[0064] The substrate support 340 can support the substrate 100. The substrate support 340 can support the substrate 100 by allowing the substrate 100 to be placed on it, or by adsorbing or attaching a surface of the substrate 100 to the substrate support 340. For example, the substrate support 340 may include a frame, rod, etc., fixed to the inside of the chamber 310. As another example, the substrate support 340 may include a clamp for holding the substrate 100. As another example, the substrate support 340 may include an adhesive chuck or an electrostatic chuck. In this case, the substrate support 340 may be integrally formed with the magnetic generator 360.

[0065] The mask support 350 can support the mask assembly 1000. The mask support 350 may be the same as or similar to the substrate support 340 described above, so its description will be omitted for ease of explanation. Now, we will focus on and describe the case where the mask support 350 includes a frame fixed to the inside of the cavity 310 and the mask assembly 1000 is placed on the frame and thus supported.

[0066] The magnetic generator 360 can be disposed within the chamber 310 and enable the mask frame 1100 to be attached to the substrate 100. Alternatively, the magnetic generator 360 can be disposed within the chamber 310 and enable the substrate support 340 to be attached to the substrate 100. The magnetic generator 360 may include an electromagnet.

[0067] Pressure regulator 370 can be connected to chamber 310 and can regulate the internal pressure of chamber 310. Pressure regulator 370 may include a pipe connected to chamber 310 and a pump located on the pipe.

[0068] The mask assembly 1000 may include a mask frame 1100 and a mask 1200. In one embodiment, the mask assembly 1000 may be arranged to face the deposition source 330 and may be configured to receive deposition material and deposit the deposition material on the substrate 100.

[0069] Reference Figure 2 and Figure 3 The mask frame 1100 may include an opening 1150 through which the deposited material can pass, and a plurality of frames surrounding the opening 1150.

[0070] The mask frame 1100 may include a first frame 1110 and a second frame 1120 facing each other, and a third frame 1130 and a fourth frame 1140 facing each other. For example, the first frame 1110 may be spaced apart from the second frame 1120 in an X direction corresponding to the length direction of the mask 1200, and may extend in a Y direction intersecting the length direction of the mask 1200. The third frame 1130 may extend in the X direction and may be spaced apart from the fourth frame 1140 in the Y direction. The first frame 1110 may be connected to the third frame 1130 and the fourth frame 1140, and the second frame 1120 may be connected to the third frame 1130 and the fourth frame 1140. Similarly, the third frame 1130 may be connected to the first frame 1110 and the second frame 1120, and the fourth frame 1140 may be connected to the first frame 1110 and the second frame 1120. The mask frame 1100 may be made of a rigid material that will not significantly deform when the mask 1200 is welded.

[0071] According to one embodiment, a support rod 1160 may be included in a mask frame 1100. The support rod 1160 may overlap with a non-opening region 1240 of the mask 1200, as will be described later. The support rod 1160 may extend in the Y direction and may connect to a third frame 1130 or a fourth frame 1140. The support rod 1160 may prevent deposition material from being deposited on portions of the substrate 100 other than its predetermined portions, so that deposition material is deposited only on the predetermined portions. The support rod 1160 may prevent or reduce bending of the mask frame 1100 due to the weight of the mask 1200 and may support the mask 1200 or the mask frame 1100.

[0072] The mask 1200 can be mounted on the mask frame 1100. The mask 1200 can be made of stainless steel, Invar alloy, nickel (Ni), cobalt (Co), Ni alloy, Ni-Co alloy, etc.

[0073] According to one embodiment, the width of the mask 1200 may be smaller than the width of the opening 1150. For example, see reference... Figure 2 The width of the mask 1200 in the Y direction can be smaller than the width of the opening 1150 in the Y direction. Therefore, multiple masks 1200 can be mounted on the mask frame 1100 to prevent or reduce sagging of the mask frame 1100 due to the weight of the masks 1200. According to another embodiment, the width of each mask 1200 can be greater than the width of each opening 1150. In this case, for example, the width of the mask 1200 in the Y direction can be greater than the width of the opening 1150 in the Y direction. Therefore, multiple masks 1200 can be integrally mounted on the mask frame 1100. For ease of description, the case where the width of each mask 1200 is smaller than the width of each opening 1150 will now be discussed and described in detail.

[0074] Masks 1200 can be continuously arranged between the third frame 1130 and the fourth frame 1140. The two ends E1 and E2 of each mask 1200 can be welded and fixed to the first frame 1110 and the second frame 1120, respectively. Masks 1200 can cover opening 1150.

[0075] Each mask 1200 may include a welding area 1210, a deposition area 1230, and a non-opening area 1240. The welding area 1210 may be included in both ends E1 and E2 of the mask 1200, respectively. The welding area 1210 may be connected to the mask frame 1100. For example, the welding area 1210 may be welded and fixed to a first frame 1110 or a second frame 1120.

[0076] Deposition zone 1230 may be a zone corresponding to opening 1150. Each of deposition zones 1230 may include a plurality of deposition openings 1235, and deposited material may pass through mask 1200 via the plurality of deposition openings 1235. According to one embodiment, deposition zones 1230 may be spaced apart from each other. For example, deposition zones 1230 may be spaced apart from each other in the X direction. According to another embodiment, deposition zones 1230 may be continuously included to face opening 1150. The case where deposition zones 1230 are spaced apart from each other will now be discussed or described.

[0077] Figure 4 This is a schematic plan view illustrating a mask 1200 according to an embodiment.

[0078] Reference Figure 4 The mask 1200 may include a deposition area 1230 and a non-opening area 1240, the deposition area 1230 facing the opening to receive the deposition material and the deposition material passing through the deposition area 1230, and the non-opening area 1240 surrounding the deposition area 1230 and arranged between the deposition areas 1230.

[0079] Each deposition zone 1230 may include a deposition opening 1235. According to one embodiment, a plurality of deposition openings 1235 may be included, and the plurality of deposition openings 1235 may be spaced apart from each other in the X or Y direction. Each of the deposition openings 1235 may have any of a variety of shapes, such as rectangular and polygonal.

[0080] Non-opening regions 1240 may be arranged around and between sedimentation regions 1230. Non-opening regions 1240 may be arranged outside sedimentation regions 1230. For example, non-opening regions 1240 may be arranged around at least a corresponding portion of sedimentation regions 1230. Non-opening regions 1240 may be arranged around sedimentation regions 1230 in at least some directions in the length direction of mask 1200 and directions intersecting the length direction of mask 1200. According to another embodiment, non-opening regions 1240 may be between adjacent sedimentation regions 1230. When a plurality of sedimentation regions 1230 and a plurality of non-opening regions 1240 are included and the sedimentation regions 1230 are spaced apart from each other, each of the plurality of non-opening regions 1240 may be between the plurality of sedimentation regions 1230. For example, the plurality of sedimentation regions 1230 may be arranged in the X direction, and non-opening regions 1240 may be arranged between the plurality of sedimentation regions 1230. For example, sedimentation regions 1230 and non-opening regions 1240 may alternate with each other.

[0081] The non-opening region 1240 between adjacent deposition regions 1230 may have a first width W1 in the X direction. The first width W1 of the non-opening region 1240 may be approximately 200 μm to approximately 700 μm, approximately 200 μm to approximately 600 μm, or approximately 300 μm to approximately 500 μm. In this way, the first width W1 of the non-opening region 1240 can vary.

[0082] As will be referred to later Figure 9 As described, laser welding can be performed on the non-opening region 1240, and thus a weld nugget can be formed. Since the weld nugget formed by laser welding can have a size of approximately 200 μm to approximately 300 μm, when the width of the non-opening region 1240 is small, the weld nugget may form in the deposition region 1230. When the width of the non-opening region 1240 is large, repulsive forces may arise due to changes in the physical properties of the deposition region 1230 and the non-opening region 1240, thus reducing the adhesion of the mask 1200. Therefore, the first width W1 of the non-opening region 1240 between adjacent deposition regions 1230 can be approximately 200 μm to approximately 500 μm.

[0083] Since no opening is defined in the non-opening region 1240, the non-opening region 1240 cannot receive deposited material. (See above reference.) Figure 2 As described, the mask assembly 1000 may further include a support rod 1160 extending in the Y direction, and the support rod 1160 included in the mask assembly 1000 may overlap with the non-opening area 1240 of the mask 1200.

[0084] Figure 5 and Figure 6This is a schematic cross-sectional view illustrating a mask 1200 according to an embodiment. Figure 5 It is along the 1200 mask. Figure 4 The cross-sectional view taken by line I-I', which traverses two non-opening regions 1240 and sedimentation region 1230, and Figure 6 It is along the 1200 mask. Figure 4 The cross-sectional view taken by line II-II', which only crosses the non-open area 1240. Figure 5 and Figure 6 Zhongyu Figure 4 The same reference numerals in the figures indicate the same elements, therefore their repeated descriptions are omitted.

[0085] Reference Figure 5 According to one embodiment, the deposition region 1230 of the mask 1200 may include a plurality of deposition openings 1235, and the plurality of deposition openings 1235 may be formed by chemical etching. For example, after etching a predetermined depth on one surface 1231 of the mask 1200 in the deposition region 1230, another surface 1233 of the mask 1200 opposite to one surface 1231 may be etched to a predetermined depth to form a plurality of deposition openings 1235. According to another embodiment, the plurality of deposition openings 1235 may be formed by irradiating the deposition region 1230 of the mask 1200 with a laser.

[0086] When the sedimentation opening 1235 is only included in the sedimentation zone 1230, fluctuations may occur due to the difference between the volume of the sedimentation zone 1230 and the volume of the non-opening zone 1240.

[0087] Reference Figure 6 According to one embodiment, the non-aperture region 1240 of the mask 1200 may include a first portion 1245 and a second portion 1246, the second portion 1246 having a thickness in the Z direction smaller than the thickness of the first portion 1245 in the Z direction. More specifically, the second portion 1246 may be formed by etching a predetermined depth onto another surface 1243 of the mask 1200 opposite to one surface 1241 in the non-aperture region 1240. The second portion 1246 of the non-aperture region 1240 may be a portion obtained by etching half the thickness of the mask 1200. This process may refer to half-etching in the Z direction (the thickness direction of the mask 1200).

[0088] Because the other surface 1243 of the mask 1200 in the non-aperture region 1240 is partially etched, and therefore the non-aperture region 1240 includes a first portion 1245 and a second portion 1246 having a thickness smaller than the first portion 1245 in the Z direction, the non-aperture region 1240 can have a volume similar to that of the deposition region 1230 including the deposition opening 1235. Since the non-aperture region 1240 has a volume similar to that of the deposition region 1230 including the deposition opening 1235, fluctuations due to differences between the volume of the deposition region 1230 and the volume of the non-aperture region 1240 can be prevented.

[0089] Figure 7 , Figure 8 and Figure 9 This is a schematic plan view illustrating an embodiment of a mask 1200 according to the concept of the present invention. More specifically, Figure 7 and Figure 8 This is a schematic plan view of the welding area 1210 of the mask 1200 according to an embodiment, and Figure 9 This is a schematic plan view of the non-opening area 1240 of the mask 1200 according to an embodiment. Figures 7 to 9 In and Figure 4 The same reference numerals in the figures indicate the same elements, therefore their repeated descriptions are omitted.

[0090] Reference Figure 7 The mask 1200 may include a welding area 1210. The welding area 1210 may be a region of the mask 1200 connected to the mask frame 1100. More specifically, a laser may be directed at the welding area 1210, so that the mask 1200 can be welded and fixed to the mask frame 1100. During laser welding, a plurality of first weld nuggets 1217 (e.g., weld nuggets) may be formed in the welding area 1210 of the mask 1200. Each of the first weld nuggets 1217 formed via laser welding may have a size of approximately 200 μm to approximately 300 μm.

[0091] Reference Figure 8 The pixel position accuracy (PPA) in the X direction can be corrected by additional welding on the welding area 1210 of the mask 1200. More specifically, when additional laser welding is applied to the welding area 1210 of the mask 1200, the deposition area 1230 of the mask 1200 adjacent to the welding area 1210 can extend in the X direction, and thus the PPA in the X direction can be corrected. Since the PPA can be corrected by additional laser welding, this will now be referred to as welding correction.

[0092] However, since the welding areas 1210 of the mask 1200 are respectively included on either end of the mask 1200, the effect of welding correction caused by additional welding can only be applied to the deposition area 1230 of the welding area 1210 adjacent to the mask 1200, and the effect of welding correction cannot be applied to the deposition area 1230 of the welding area 1210 away from the mask 1200.

[0093] More specifically, the PPA of the deposition opening 1235 of the deposition area 1230 of the welding area 1210 adjacent to the mask 1200 can be corrected in the X direction, but the PPA of the deposition opening 1235 of the deposition area 1230 of the welding area 1210 away from the mask 1200 cannot be corrected, so the PPA of the deposition area 1230 of the welding area 1210 away from the mask 1200 may be reduced.

[0094] To address this problem, according to this disclosure, a non-opening region 1240 in which welding can be performed is arranged outside the deposition region 1230 of the mask 1200, and thus welding correction can be performed in the non-opening region 1240, and thus even on the deposition region 1230 of the welding region 1210 away from the mask 1200. In particular, by arranging the non-opening region 1240 between adjacent deposition regions 1230, welding correction can be performed in the non-opening region 1240 and even on the deposition region 1230 of the welding region 1210 away from the mask 1200.

[0095] Reference Figure 9 As discussed herein, the non-opening region 1240 can be arranged outside the deposition region 1230 of the mask 1200. The non-opening region 1240 can be arranged around at least a portion of the deposition region 1230. The non-opening region 1240 can be between adjacent deposition regions 1230. The non-opening region 1240 can be included such that weld correction can be performed even on the deposition region 1230 remote from the weld region 1210 of the mask 1200. A laser can be irradiated onto the non-opening region 1240, thus correcting the PPA of the deposition region 1230 of the mask 1200 near the non-opening region 1240.

[0096] The non-opening region 1240 may include a second weld nugget 1247 (e.g., a weld nugget). More specifically, the non-opening region 1240 may include a second weld nugget 1247 formed by a laser during weld correction. Each of the second weld nuggets 1247 may have a size of 200 μm to 300 μm. Although in Figure 9 The illustration shows three second weld nuggets 1247 (weld weld nuggets), but the number of second weld nuggets 1247 (weld weld nuggets) is not limited to this. It may include three or fewer, or more, second weld nuggets 1247 (weld weld nuggets). Figure 9In this configuration, the second weld nugget 1247 (weld weld nugget) is only included in the portion of the non-opening region 1240 arranged in the X direction relative to the deposition region 1230. However, the second weld nugget 1247 (weld weld nugget) may also be included in the portion of the non-opening region 1240 arranged from the deposition region 1230 in the Y direction and in the direction opposite to the X direction.

[0097] The laser can irradiate the non-opening region 1240, thus enabling welding correction. For example, when the laser irradiates the portion of the non-opening region 1240 in the X direction between adjacent deposition regions 1230 and thus performs welding correction, the adjacent deposition regions 1230 can expand in the X direction without changing in the Y direction. Furthermore, when the laser irradiates the portion of the non-opening region 1240 arranged from the deposition regions 1230 in the Y direction and thus performs welding correction, the deposition regions 1230 adjacent to the portion of the non-opening region 1240 in the Y direction can contract in the Y direction without changing in the X direction.

[0098] Because the non-opening region 1240 is located outside the deposition region 1230, the laser irradiates the non-opening region 1240 and performs welding correction, so PPA correction can even be performed on the deposition region 1230, which is far from the welding region 1210 of the mask 1200, thereby improving the deposition accuracy and increasing the yield.

[0099] Figure 10 This is a schematic perspective view illustrating a display device 2 manufactured by an apparatus configured to manufacture a display device according to an embodiment, and Figure 11 This is a schematic cross-sectional view of display device 2. Figure 11 It is the edge of display device 2 Figure 10 The cross-sectional view taken from line III-III'.

[0100] Reference Figure 10 The display device 2 may include a display area DA and a non-display area NDA surrounding the display area DA. The non-display area NDA may surround the display area DA. The display device 2 can provide an image by using light emitted by a plurality of pixels P arranged in the display area DA. In the non-display area NDA, no image can be displayed.

[0101] Although an organic light-emitting display will now be exemplified and described as display device 2, display device 2 is not limited thereto. According to one embodiment, display device 2 may be an inorganic light-emitting display, a quantum dot light-emitting display, etc. For example, the emitting layer of the display element included in display device 2 may contain organic materials, inorganic materials, quantum dots, organic materials and quantum dots, or inorganic materials and quantum dots.

[0102] although Figure 10A display device 2 including a flat display surface is illustrated, but embodiments of the present disclosure are not limited thereto. According to one embodiment, the display device 2 may include a three-dimensional display surface or a curved display surface.

[0103] When the display device 2 includes a three-dimensional display surface, the display device 2 may include multiple display areas pointing in different directions, for example, it may include a display surface in the form of a polyprism. According to another embodiment, when the display device 2 includes a curved display surface, the display device 2 can be implemented in various shapes, including flexible, foldable, and rollable display devices.

[0104] Figure 10 The example shown is a display device 2 that can be applied to a mobile phone. Although illustrated here, electronic modules, camera modules, power modules, etc., mounted on the motherboard can be arranged together with the display device 2 in a bracket / housing, etc., to constitute a mobile phone. In particular, the display device 2 is suitable not only for large-sized electronic devices such as televisions and monitors, but also for small and medium-sized electronic devices such as tablet computers, car navigation devices, game consoles, and smartwatches.

[0105] exist Figure 10 In this context, the display area DA of the display device 2 is rectangular. However, the shape of the display area DA can be circular, elliptical, or a polygon such as a triangle or pentagon.

[0106] Display device 2 includes a plurality of pixels P arranged in display area DA. Each of the plurality of pixels P may include an organic light-emitting diode (OLED). Each of the plurality of pixels P may emit, for example, red light, green light, blue light, or white light via the OLED. Pixel P as used herein can be understood as a pixel that emits one of the red, green, blue, and white light as described above.

[0107] Reference Figure 11 The display elements can be arranged on the substrate 100. The display elements may include thin-film transistors (TFTs) and organic light-emitting diodes (OLEDs).

[0108] Substrate 100 may comprise glass or a polymer resin. Examples of polymer resins may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, and cellulose acetate propionate. Substrate 100 comprising a polymer resin may be flexible, rollable, or bendable. Substrate 100 may have a multilayer structure comprising a layer comprising the aforementioned polymer resin and an inorganic layer (not shown).

[0109] A buffer layer 101 may be disposed on a substrate 100. The buffer layer 101 may be located on the substrate 100 and may reduce or prevent the penetration of foreign matter, moisture, or ambient air from beneath the substrate 100, and may provide a flat surface on the substrate 100. The buffer layer 101 may comprise inorganic materials (such as oxides or nitrides), organic materials, or organic and inorganic compounds, and may be a single layer or multiple layers of inorganic and organic materials.

[0110] The thin-film transistor (TFT) can be disposed on the buffer layer 101. The TFT may include a semiconductor layer 134, a gate electrode 136 overlapping the semiconductor layer 134, and a connection electrode electrically connected to the semiconductor layer 134. The TFT can be connected to an organic light-emitting diode (OLED) and can drive the OLED.

[0111] Semiconductor layer 134 may be disposed on buffer layer 101 and may include a channel region 131 overlapping with gate electrode 136; and source region 132 and drain region 133, respectively disposed on both sides of channel region 131, and containing impurities with a higher concentration than those in channel region 131. Impurities may include N-type impurities or P-type impurities. Source region 132 and drain region 133 may be electrically connected to a connection electrode.

[0112] Semiconductor layer 134 may comprise an oxide semiconductor and / or a silicon semiconductor. Semiconductor layer 134 may comprise an oxide of at least one material selected from the group consisting of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn). For example, semiconductor layer 134 may be InSnZnO (ITZO), InGaZnO (IGZO), etc. When semiconductor layer 134 is formed of silicon semiconductor, semiconductor layer 134 may comprise, for example, amorphous silicon (a-Si) or low-temperature polycrystalline silicon (LTPS) obtained by crystallizing amorphous silicon (a-Si).

[0113] The first insulating layer 103 may be on the semiconductor layer 134. The first insulating layer 103 may comprise silicon oxide (SiO2) or silicon nitride (SiN). x The first insulating layer 103 may be a single layer or multiple layers comprising the inorganic insulating material described above. It is composed of at least one inorganic insulating material from the group consisting of silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO2).

[0114] The gate electrode 136 may be located on the first insulating layer 103. The gate electrode 136 may contain at least one of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu), and may have a single-layer or multi-layer structure. The gate electrode 136 may be connected to a gate line to which an electrical signal is applied.

[0115] The second insulating layer 105 may be on the gate electrode 136. The second insulating layer 105 may comprise silicon oxide (SiO2) or silicon nitride (SiN). x The second insulating layer 105 may be a single layer or multiple layers comprising the aforementioned inorganic insulating materials, including silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO2).

[0116] The storage capacitor Cst may be on the first insulating layer 103. The storage capacitor Cst may include a lower electrode 144 and an upper electrode 146 overlapping the lower electrode 144. The lower electrode 144 and the upper electrode 146 of the storage capacitor Cst may overlap each other, wherein the second insulating layer 105 is between the lower electrode 144 and the upper electrode 146.

[0117] The lower electrode 144 of the storage capacitor Cst may overlap with the gate electrode 136 of the thin-film transistor TFT, and may be integrally arranged with the gate electrode 136 of the thin-film transistor TFT. According to one embodiment, the storage capacitor Cst may not overlap with the thin-film transistor TFT, and the lower electrode 144 of the storage capacitor Cst may be a component independent of the gate electrode 136 of the thin-film transistor TFT.

[0118] The upper electrode 146 of the storage capacitor Cst may comprise aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and / or copper (Cu), and may each be a single layer or multiple layers comprising the aforementioned materials.

[0119] The third insulating layer 107 may be located on the upper electrode 146 of the storage capacitor Cst. The third insulating layer 107 may comprise silicon oxide (SiO2) or silicon nitride (SiN). xThe third insulating layer 107 may be a single layer or multiple layers comprising the aforementioned inorganic insulating materials, including silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO2).

[0120] The source electrode 137 and drain electrode 138 corresponding to the connecting electrodes can be located on the third insulating layer 107. Each of the source electrode 137 and drain electrode 138 can contain a conductive material, including molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), and can be a multilayer or a single layer containing the above materials. Each of the source electrode 137 and drain electrode 138 can have a Ti / Al / Ti multilayer structure.

[0121] The first planarization layer 111 may be on the source electrode 137 and the drain electrode 138. The first planarization layer 111 may be a monolayer containing organic or inorganic materials or a multilayer formed by stacking monolayers containing organic or inorganic materials. According to one embodiment, the first planarization layer 111 may contain commercial polymers such as benzocyclobutene (BCB), polyimide (PI), hexamethyldisiloxane (HMDSO), polymethyl methacrylate (PMMA) or polystyrene (PS), polymer derivatives having phenolic groups, acrylic polymers, imide polymers, acrylate polymers, amide polymers, fluorinated polymers, p-xylene polymers, vinyl alcohol polymers, blends thereof, etc. The first planarization layer 111 may contain silicon oxide (SiO2), silicon nitride (SiN), etc. x Materials such as silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), and zinc oxide (ZnO2) can be used. After forming the first planarization layer 111, chemical and mechanical polishing can be performed to provide a flat upper surface.

[0122] The contact metal layer CM can be on the first planarization layer 111. The contact metal layer CM can contain aluminum (Al), copper (Cu), or titanium (Ti), and can be formed as a single layer or multiple layers. The contact metal layer CM can be a Ti / Al / Ti multilayer.

[0123] The second planarization layer 113 may be on the contact metal layer CM. The second planarization layer 113 may be a monolayer containing organic or inorganic materials or a multilayer formed by stacking monolayers containing organic or inorganic materials. The second planarization layer 113 may contain commercial polymers such as benzocyclobutene (BCB), polyimide (PI), hexamethyldisiloxane (HMDSO), polymethyl methacrylate (PMMA) or polystyrene (PS), polymer derivatives having phenolic groups, acrylic polymers, imide polymers, acrylate polymers, amide polymers, fluorinated polymers, p-xylene polymers, vinyl alcohol polymers, blends thereof, etc. The second planarization layer 113 may contain silicon oxide (SiO2), silicon nitride (SiN), etc. x Materials such as silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), and zinc oxide (ZnO2) can be used. After forming the second planarization layer 113, chemical and mechanical polishing can be performed to provide a flat upper surface. According to one embodiment, the second planarization layer 113 can be omitted.

[0124] The organic light-emitting diode (OLED) includes a pixel electrode 210, an intermediate layer 220, and a counter electrode 230, and can be located on a second planarization layer 113. The pixel electrode 210 can be electrically connected to a contact metal layer CM through contact holes penetrating the second planarization layer 113, and the contact metal layer CM can be electrically connected to a source electrode 137 and a drain electrode 138 corresponding to the connection electrodes of a thin-film transistor (TFT) through contact holes penetrating the first planarization layer 111, so that the OLED can be electrically connected to the TFT.

[0125] The pixel electrode 210 may be located on the second planarization layer 113 and may be a (semi-)transparent electrode or a reflective electrode. The pixel electrode 210 may include a reflective layer and a transparent or semi-transparent electrode layer on the reflective layer. The reflective layer may contain aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu), or compounds thereof. The transparent or semi-transparent electrode layer may contain at least one element selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In₂O₃), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). The pixel electrode 210 may have an ITO / Ag / ITO stacked structure.

[0126] The pixel defining layer 180 may be on the second planarization layer 113. The pixel defining layer 180 may include an opening that exposes at least a portion of the pixel electrode 210. The area exposed by the opening of the pixel defining layer 180 may be defined as a light-emitting region EA. The vicinity of the light-emitting region EA is a non-light-emitting region NEA, and the non-light-emitting region NEA may surround the light-emitting region EA. In other words, the display region DA may include a plurality of light-emitting regions EA and a non-light-emitting region NEA surrounding the plurality of light-emitting regions EA. The pixel defining layer 180 may prevent arcing at the edge of the pixel electrode 210 by increasing the distance between the pixel electrode 210 and the counter electrode 230 above the pixel electrode 210. The pixel defining layer 180 may be formed by spin coating or the like from an organic insulating material (such as polyimide, polyamide, acrylic resin, benzocyclobutene, hexamethyldisiloxane (HMDSO), or phenolic resin).

[0127] The intermediate layer 220 may be on the pixel electrode 210, at least a portion of which is exposed by the pixel defining layer 180. The intermediate layer 220 may include an emission layer 220b, and the first functional layer 220a and the second functional layer 220c may optionally be disposed below and above the emission layer 220b, respectively.

[0128] According to one embodiment, by using the above... Figure 1 In the apparatus 1 for manufacturing a display device, an intermediate layer 220 may be formed on a pixel electrode 210, at least a portion of which is exposed by the pixel defining layer 180. More specifically, by using the above-described... Figure 1 In the device 1 configured to manufacture a display device, the emitter layer 220b of the intermediate layer 220 can be formed on the pixel electrode 210, at least a portion of which is exposed by the pixel defining layer 180.

[0129] The first functional layer 220a may include a hole injection layer (HIL) and / or a hole transport layer (HTL), and the second functional layer 220c may include an electron transport layer (ETL) and / or an electron injection layer (EIL).

[0130] The emitting layer 220b may contain organic materials, including fluorescent or phosphorescent materials that emit red, green, blue, or white light. The emitting layer 220b may contain low-molecular-weight organic materials or high-molecular-weight organic materials.

[0131] When the emitter layer 220b contains a low molecular weight material, the intermediate layer 220 can be a stack of HIL, HTL, emitter layer, ETL, and EIL in a single or composite structure, and can contain any of a variety of materials as low molecular weight materials, including copper phthalocyanine (CuPc), N,N'-bis(naphthyl-1-yl)-N,N'-diphenyl-benzidine (NPB), or tri-8-hydroxyquinoline aluminum (Alq3). These layers can be formed by vacuum deposition.

[0132] When the emitter layer 220b contains a high molecular weight material, the intermediate layer 220 can typically have a structure including an HTL and an emitter layer. In this case, the HTL can contain poly(ethylene dioxythiophene) (PEDOT), and the emitter layer 220b can contain a high molecular weight material, such as polyphenylene oxide (PPV) or polyfluorene. The emitter layer 220b can be formed by screen printing, inkjet printing, laser-induced thermal imaging (LITI), etc.

[0133] The counter electrode 230 can be on the intermediate layer 220. The counter electrode 230 can be on the intermediate layer 220 to cover the entire intermediate layer 220. The counter electrode 230 can be above the display area DA to cover the entire display area DA. In other words, the counter electrode 230 can be integrally formed above the entire display panel using an aperture mask to cover multiple pixels P arranged in the display area DA.

[0134] The counter electrode 230 may comprise a conductive material with low work function. For example, the counter electrode 230 may comprise a (semi-)transparent layer comprising, for example, silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or alloys of these materials. Alternatively, the counter electrode 230 may further comprise a layer such as ITO, IZO, ZnO, or In2O3 on a (semi-)transparent layer comprising any of the aforementioned materials.

[0135] When adjacent deposition zones of a mask are spaced far apart, repulsive forces arise due to the difference in physical properties between the ends of each deposition zone and the area between the deposition zones, resulting in reduced adhesion of the mask. Additionally, when the deposition zone includes deposition openings, fluctuations occur due to the difference in volume between the deposition zone and the non-opening area. Furthermore, weld correction can be performed by additional welding on the weld zones included at both ends of the mask; however, the effect of weld correction only applies to the deposition zones adjacent to the weld zones.

[0136] To address these issues, embodiments of this disclosure provide a mask assembly and an apparatus configured to manufacture a display device, wherein a non-opening region having a width of approximately 200 μm to approximately 500 μm is arranged between adjacent deposition regions to prevent repulsive forces due to differences in physical properties, a first portion and a second portion having a thickness less than that of the first portion are arranged on a surface of the non-opening region by half-etching to prevent fluctuations due to differences between the volume of the deposition region and the volume of the non-opening region, and laser welding is performed on the non-opening region so that welding correction can also be applied to the deposition region of the welding region away from the mask.

[0137] According to one embodiment, a method of manufacturing a display device may include: forming a pixel electrode; forming an emitter layer on the pixel electrode by the following steps: arranging a substrate in a cavity; arranging a deposition source in the cavity, the deposition source being configured to supply deposition material into the cavity; arranging a mask assembly facing the deposition source, and the mask assembly being configured to receive deposition material and deposit the deposition material on the substrate, the mask assembly having a mask frame including an opening and a mask, the mask being arranged on the mask frame and including a deposition region and a non-opening region arranged around the deposition region, the deposition region facing the opening and being configured to receive deposition material, wherein the width of the non-opening region in the length direction of the mask is approximately 200 μm to approximately 500 μm; and forming a counter electrode on the emitter layer.

[0138] According to embodiments of the present disclosure as described above, a mask assembly having improved PPA due to the arrangement of non-opening regions between deposition areas of the mask is provided; an apparatus configured to manufacture a display device is provided; and a method for manufacturing a display device is provided. Of course, the scope of the present disclosure is not limited thereto.

[0139] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the appended claims.

Claims

1. A mask assembly, comprising: Mask frame, including openings; as well as A mask, arranged on the mask frame, includes a deposition area and a non-opening area surrounding the deposition area, the deposition area facing the opening to receive deposited material. The portion of the non-opening area between adjacent deposition areas has a width of 200 μm to 500 μm along the length of the mask, and each of the deposition areas includes multiple deposition openings. The non-opening area of ​​the mask includes a first portion and a second portion, the second portion having a thickness less than that of the first portion, and the first portion and the second portion alternating with each other in the width direction of the mask.

2. The mask assembly of claim 1, wherein the second portion is obtained by half-etching in the thickness direction of the mask.

3. The mask assembly of claim 1, wherein the non-opening region surrounds at least a portion of the deposition region.

4. The mask assembly of claim 1, wherein the mask frame further includes a support rod extending in a direction intersecting the length direction of the mask.

5. The mask assembly of claim 4, wherein the non-opening area of ​​the mask overlaps with the support rod.

6. The mask assembly of claim 1, wherein the mask further includes a welded area welded and fixed to the mask frame.

7. The mask assembly of claim 6, wherein the welding areas are provided at both ends of the mask.

8. The mask assembly of claim 6, wherein the welding area includes a first weld nugget.

9. The mask assembly of claim 1, wherein the non-opening region of the mask includes a second melt core.

10. The mask assembly of claim 1, wherein the width of the mask is smaller than the width of the opening, and Multiple masks are mounted on the mask frame.

11. An apparatus for manufacturing a display device, the apparatus comprising: A chamber, in which a substrate is arranged; A deposition source is disposed in the chamber and configured to supply deposition material into the chamber; as well as A mask assembly, arranged to face the deposition source, and configured to receive the deposition material and deposit the deposition material onto the substrate. The mask assembly includes: Mask frame, including openings; as well as A mask, disposed on the mask frame, includes a deposition area and a non-opening area arranged around the deposition area, the deposition area facing the opening to receive the deposited material. The portion of the non-opening area between adjacent deposition areas has a width of 200 μm to 500 μm along the length of the mask, and each of the deposition areas includes multiple deposition openings. The non-opening area of ​​the mask includes a first portion and a second portion, the second portion having a thickness less than that of the first portion, and the first portion and the second portion alternating with each other in the width direction of the mask.

12. The apparatus of claim 11, wherein the second portion is obtained by half-etching in the thickness direction of the mask.

13. The device of claim 11, wherein the non-opening region surrounds at least a portion of the deposition region.

14. The device of claim 11, wherein the mask frame further includes a support rod extending in a direction intersecting the length direction of the mask.

15. The device of claim 14, wherein the non-opening area of ​​the mask overlaps with the support rod.

16. The apparatus of claim 11, wherein the mask further includes welded areas welded and fixed to the mask frame, the welded areas being provided at both ends of the mask.

17. The apparatus of claim 16, wherein the welding area of ​​the mask includes a first weld nugget, and the non-opening area of ​​the mask includes a second weld nugget.

18. A method of manufacturing a display device, the method comprising: Forming pixel electrodes; An emission layer is formed on the pixel electrode by the following steps: a substrate is arranged in a cavity; A deposition source is disposed in the chamber and configured to supply deposition material into the chamber; a mask assembly is disposed facing the deposition source and configured to receive the deposition material and deposit the deposition material onto the substrate; the mask assembly has a mask frame including an opening and a mask; the mask is disposed on the mask frame and includes a deposition area and a non-opening area disposed around the deposition area; the deposition area faces the opening and is configured to receive the deposition material; wherein the portion of the non-opening area between adjacent deposition areas has a width of 200 μm to 500 μm in the length direction of the mask; each of the deposition areas includes a plurality of deposition openings; and wherein the non-opening area of ​​the mask includes a first portion and a second portion, the second portion having a thickness less than that of the first portion, and the first portion and the second portion alternating with each other in the width direction of the mask. as well as A counter electrode is formed on the emitter layer.

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